Pub Date : 2017-03-01DOI: 10.1109/CSTIC.2017.7919849
Xiangfu Zhao, W. Chien, Kelly Yang
The Root Mean Square current (Irms) has been explored on both N doped un-silicided poly and silicided poly at 40nm technology node. It is found that poly resistance-current (RI) curves show an initially high resistance due to Schottky Rectifying contact. However, poly Irms can be estimated similar to metal Irms. Parameters for poly Irms calculation is provided on the basis of 5°C Joule heating.
{"title":"Exploration of poly Irms based on 40nm technology node","authors":"Xiangfu Zhao, W. Chien, Kelly Yang","doi":"10.1109/CSTIC.2017.7919849","DOIUrl":"https://doi.org/10.1109/CSTIC.2017.7919849","url":null,"abstract":"The Root Mean Square current (Irms) has been explored on both N doped un-silicided poly and silicided poly at 40nm technology node. It is found that poly resistance-current (RI) curves show an initially high resistance due to Schottky Rectifying contact. However, poly Irms can be estimated similar to metal Irms. Parameters for poly Irms calculation is provided on the basis of 5°C Joule heating.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"1 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76812887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-01DOI: 10.1109/CSTIC.2017.7919886
Bin Li, Yue Xu, RuiMing Luo
An improved active-quenching circuit and a linear counting circuit used for a silicon single photon avalanche diode (SPAD) are presented in this paper. The proposed quenching circuit is fast and compact. The linear counting circuit can achieve 10 bit large count range with a small capacitor, which can effectively reduce the area of pixel. Due to the significant advantages of low-cost, compactness and high count range, the two pixel circuits are very suitable for the high density SPAD array detector.
{"title":"A 10 bit analog counter in SPAD pixel","authors":"Bin Li, Yue Xu, RuiMing Luo","doi":"10.1109/CSTIC.2017.7919886","DOIUrl":"https://doi.org/10.1109/CSTIC.2017.7919886","url":null,"abstract":"An improved active-quenching circuit and a linear counting circuit used for a silicon single photon avalanche diode (SPAD) are presented in this paper. The proposed quenching circuit is fast and compact. The linear counting circuit can achieve 10 bit large count range with a small capacitor, which can effectively reduce the area of pixel. Due to the significant advantages of low-cost, compactness and high count range, the two pixel circuits are very suitable for the high density SPAD array detector.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"203 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77019021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Spectroscopic ellipsometry technology has extensive applications in semiconductor metrology. Compared with spectroscopic ellipsometry, the Mueller matrix ellipsometry can acquire more useful information about the sample. In this paper, we present the construction of Mueller measurement equipment for 300 mm integrated circuit production line application and demonstrate the abilities of the equipment for accurate profile characterization of nanoscale structure. Mueller matrix ellipsometry may become a powerful technology for advanced technology node measurement in semiconductor device manufacturing applications.
{"title":"Measurement of nanoscale grating structure by Mueller matrix ellipsometry","authors":"Shiqiu Cheng, Fengjiao Zhong, Huiping Chen, Y. Jia, Yaoming Shi, Yiping Xu","doi":"10.1109/CSTIC.2017.7919855","DOIUrl":"https://doi.org/10.1109/CSTIC.2017.7919855","url":null,"abstract":"Spectroscopic ellipsometry technology has extensive applications in semiconductor metrology. Compared with spectroscopic ellipsometry, the Mueller matrix ellipsometry can acquire more useful information about the sample. In this paper, we present the construction of Mueller measurement equipment for 300 mm integrated circuit production line application and demonstrate the abilities of the equipment for accurate profile characterization of nanoscale structure. Mueller matrix ellipsometry may become a powerful technology for advanced technology node measurement in semiconductor device manufacturing applications.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"8 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77063970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-01DOI: 10.1109/CSTIC.2017.7919848
Yin Long, R. Fan, Hungling Chen, Haihua Li
The research aims at the VC (voltage contrast) of contact-loop defects in 28nm processes. A new type defect, contact W (tungsten) missing, was found during process developments, and the designed inline E-beam inspection was used to detect those defects by their VC features. The mechanism of defects and the method of the enhancement of the detection were described. An extreme high signal E-beam scan recipe is required in corresponding to the unique defect wanted and, in doing so, the partial-opened W missing defects can be found. Since the defect can be detected instantly by E-beam inspection, and therefore an inline monitoring index can be set up. Compared to the end-of-line electrical test, this inline monitor is very much closer to the trouble process and shrinks the response time. The following process experiments and evaluation can be instantly verified and examined. Finally, the W missing defect was fixed by an optimization of CT Etch process and controlling of CT loop minienvironment. Instead to the debug method of failure analysis, E-beam inspection can speed up 8nm development.
{"title":"The study and investigation of inline E-beam inspection for 28nm process development","authors":"Yin Long, R. Fan, Hungling Chen, Haihua Li","doi":"10.1109/CSTIC.2017.7919848","DOIUrl":"https://doi.org/10.1109/CSTIC.2017.7919848","url":null,"abstract":"The research aims at the VC (voltage contrast) of contact-loop defects in 28nm processes. A new type defect, contact W (tungsten) missing, was found during process developments, and the designed inline E-beam inspection was used to detect those defects by their VC features. The mechanism of defects and the method of the enhancement of the detection were described. An extreme high signal E-beam scan recipe is required in corresponding to the unique defect wanted and, in doing so, the partial-opened W missing defects can be found. Since the defect can be detected instantly by E-beam inspection, and therefore an inline monitoring index can be set up. Compared to the end-of-line electrical test, this inline monitor is very much closer to the trouble process and shrinks the response time. The following process experiments and evaluation can be instantly verified and examined. Finally, the W missing defect was fixed by an optimization of CT Etch process and controlling of CT loop minienvironment. Instead to the debug method of failure analysis, E-beam inspection can speed up 8nm development.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"13 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78906516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-01DOI: 10.1109/CSTIC.2017.7919866
K. Janeczek, A. Arazna, Yan Zhang, Shiwei Ma, J. Sitek, Jing-yu Fan, Johan Liu, K. Lipiec
Heat management is one of the major challenges in modern electronic devices. The higher performance results in a production of greater amount of heat which needs to be efficiently dissipated so as to ensure the electronic devices operational during the period of lifetime. This paper discusses the application of micro- and nano-materials in thermal interface materials (TIM) used for heat management. Effects of type, size and geometry of different fillers were experimentally investigated. The results showed that it is recommended to utilize silver particles compared to copper ones to achieve higher heat dissipation. And the particles of smaller size may enhance the thermal conductivity of elaborated materials.
{"title":"Investigation of thermal interface materials reinforced with micro- and nanoparticles","authors":"K. Janeczek, A. Arazna, Yan Zhang, Shiwei Ma, J. Sitek, Jing-yu Fan, Johan Liu, K. Lipiec","doi":"10.1109/CSTIC.2017.7919866","DOIUrl":"https://doi.org/10.1109/CSTIC.2017.7919866","url":null,"abstract":"Heat management is one of the major challenges in modern electronic devices. The higher performance results in a production of greater amount of heat which needs to be efficiently dissipated so as to ensure the electronic devices operational during the period of lifetime. This paper discusses the application of micro- and nano-materials in thermal interface materials (TIM) used for heat management. Effects of type, size and geometry of different fillers were experimentally investigated. The results showed that it is recommended to utilize silver particles compared to copper ones to achieve higher heat dissipation. And the particles of smaller size may enhance the thermal conductivity of elaborated materials.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"204 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76051980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-01DOI: 10.1109/CSTIC.2017.7919814
R. Hong, Jinxia Wang, Chunxian Tao, Dawei Zhang
A series of cuprous oxide thin films with various thicknesses were deposited on quartz substrates by direct current reactive magnetron sputtering at room temperature. The crystal structure, element composition, morphology, optical and electrical properties of the samples were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), optical absorption/scattering, and sheet resistance measurement, respectively. XRD patterns indicated that single phase with the preferred orientation in (111) plane could be obtained by controlling the appropriate film thickness and oxygen pressure. The binding energy of Cu 2p and O 1s confirmed that the chemical valence of Cu in the samples is +1. With the increase of film thickness, surface roughness of the samples increased and the optical band gap edge shifted toward longer wavelength.
{"title":"Fabrication of single phase transparent conductive cuprous oxide thin films by direct current reactive magnetron sputtering","authors":"R. Hong, Jinxia Wang, Chunxian Tao, Dawei Zhang","doi":"10.1109/CSTIC.2017.7919814","DOIUrl":"https://doi.org/10.1109/CSTIC.2017.7919814","url":null,"abstract":"A series of cuprous oxide thin films with various thicknesses were deposited on quartz substrates by direct current reactive magnetron sputtering at room temperature. The crystal structure, element composition, morphology, optical and electrical properties of the samples were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), optical absorption/scattering, and sheet resistance measurement, respectively. XRD patterns indicated that single phase with the preferred orientation in (111) plane could be obtained by controlling the appropriate film thickness and oxygen pressure. The binding energy of Cu 2p and O 1s confirmed that the chemical valence of Cu in the samples is +1. With the increase of film thickness, surface roughness of the samples increased and the optical band gap edge shifted toward longer wavelength.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"46 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76201167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-01DOI: 10.1109/CSTIC.2017.7919863
J. Wen, Yanhong Tian, Zhi Jiang
Copper nanoparticles paste was prepared as inconnection materials of power electronics using potassium borohydride (KBH4) as reduction. Various influences on the morpholorgy of copper nanoparticles were discussed, such as reaction time, concentration of precursor ([Cu(NH3)4]SO4) or reducing agent (KBH4) and surfactant (polyvinyl pyrrolidone, PVP). Meanwhile, those influence to preparing pure copper nanomaterials, the growth process and phase evolution of copper nanomaterials were discussed. Some new conclusions about controlling the morphology of copper nanowires were drawn about reaction time and reaction temperature. This simple and feasible method of preparing nanomaterials are not limited to devices bonging, which have applications in printing electronics, transparent conducting films and even smart electronics.
{"title":"Morphology control of copper nanomaterials for IC bonding","authors":"J. Wen, Yanhong Tian, Zhi Jiang","doi":"10.1109/CSTIC.2017.7919863","DOIUrl":"https://doi.org/10.1109/CSTIC.2017.7919863","url":null,"abstract":"Copper nanoparticles paste was prepared as inconnection materials of power electronics using potassium borohydride (KBH4) as reduction. Various influences on the morpholorgy of copper nanoparticles were discussed, such as reaction time, concentration of precursor ([Cu(NH3)4]SO4) or reducing agent (KBH4) and surfactant (polyvinyl pyrrolidone, PVP). Meanwhile, those influence to preparing pure copper nanomaterials, the growth process and phase evolution of copper nanomaterials were discussed. Some new conclusions about controlling the morphology of copper nanowires were drawn about reaction time and reaction temperature. This simple and feasible method of preparing nanomaterials are not limited to devices bonging, which have applications in printing electronics, transparent conducting films and even smart electronics.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"13 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87803471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-01DOI: 10.1109/CSTIC.2017.7919838
Zhou Zhenlin, Guo Yingying
In semiconductor industry, strong executive ability reflects not only in one's response time, but also in accurate implementation. Generally speaking, engineers follow the rule defined in document to arrange inline production. No one can ensure zero-missing once the document is updated, and this is mainly due to the “manual talk” between document control center (DCC) and inline production. Currently, there isn't a channel to link DCC and inline production. This research aims to develop an intelligent feedback mechanism which links DCC and inline production system to replace the traditional “manual talk” mode and achieve accurate implementation.
{"title":"The research of intelligent feedback mechanism between document control and production system","authors":"Zhou Zhenlin, Guo Yingying","doi":"10.1109/CSTIC.2017.7919838","DOIUrl":"https://doi.org/10.1109/CSTIC.2017.7919838","url":null,"abstract":"In semiconductor industry, strong executive ability reflects not only in one's response time, but also in accurate implementation. Generally speaking, engineers follow the rule defined in document to arrange inline production. No one can ensure zero-missing once the document is updated, and this is mainly due to the “manual talk” between document control center (DCC) and inline production. Currently, there isn't a channel to link DCC and inline production. This research aims to develop an intelligent feedback mechanism which links DCC and inline production system to replace the traditional “manual talk” mode and achieve accurate implementation.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"32 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86886209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-01DOI: 10.1109/CSTIC.2017.7919861
C. Dong, R. E. Patrick, Gregory K. Arslanian, Tim Bao, K. Wathne, Phillip Skeen
This paper introduces a recent work by a joint effort between Air Products and Sikama International on alpha trials of a production-scale furnace for flux-free wafer bump reflow based on electron attachment (EA).
{"title":"Production-scale flux-free bump reflow using electron attachment","authors":"C. Dong, R. E. Patrick, Gregory K. Arslanian, Tim Bao, K. Wathne, Phillip Skeen","doi":"10.1109/CSTIC.2017.7919861","DOIUrl":"https://doi.org/10.1109/CSTIC.2017.7919861","url":null,"abstract":"This paper introduces a recent work by a joint effort between Air Products and Sikama International on alpha trials of a production-scale furnace for flux-free wafer bump reflow based on electron attachment (EA).","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"40 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87122712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-01DOI: 10.1109/CSTIC.2017.7919889
Xu Cheng, L. Zhang, Xian‐jing Deng
The paper proposes a Ka band low noise amplifier (LNA) using 70nm GaAs metamorphic high electron mobility transistor (mHEMT). An ultra low noise three stage amplifier demonstrated an average noise figure of 1.1dB between 24GHz and 30GHz, an average small signal power gain of 27dB, a compact chip area of 1.5mm2 (with dicing streets) and a power consumption of around 80mW@1.5V power supply. The LNA features broad bandwidth, relatively high gain, low noise figure and compact size, and will be further used in broadband receivers for communications.
{"title":"Ka-band low noise amplifier using 70nm mHEMT process for wideband communication","authors":"Xu Cheng, L. Zhang, Xian‐jing Deng","doi":"10.1109/CSTIC.2017.7919889","DOIUrl":"https://doi.org/10.1109/CSTIC.2017.7919889","url":null,"abstract":"The paper proposes a Ka band low noise amplifier (LNA) using 70nm GaAs metamorphic high electron mobility transistor (mHEMT). An ultra low noise three stage amplifier demonstrated an average noise figure of 1.1dB between 24GHz and 30GHz, an average small signal power gain of 27dB, a compact chip area of 1.5mm2 (with dicing streets) and a power consumption of around 80mW@1.5V power supply. The LNA features broad bandwidth, relatively high gain, low noise figure and compact size, and will be further used in broadband receivers for communications.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"68 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91381987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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