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Ozone-Based Atomic Layer Deposition of Gd2O3 from Tris(isopropyl-cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry† 由三(异丙基-环戊二烯基)钆原子层沉积Gd2O3:生长特性和表面化学†
Pub Date : 2015-11-10 DOI: 10.1002/cvde.201507196
Jeong Hwan Han, Annelies Delabie, Alexis Franquet, Thierry Conard, Sven Van Elshocht, Christoph Adelmann

The atomic layer deposition (ALD) of Gd2O3 from tris(isopropyl-cyclopentadienyl) gadolinium (Gd(iPrCp)3) and O3 is studied as a function of the O2/N2 ratio used to generate O3. ALD using O3 with low N2 content leads to the formation of a hydroxyl-terminated surface after combustion reactions during O3 exposure followed by proton transfer and ligand release during the Gd(iPrCp)3 half cycle. This condition leads to the presence of parasitic chemical vapor deposition (CVD) due to the hygroscopicity of Gd2O3. By contrast, long O3 pulses with high N2 content lead to the dehydroxylation of the surface and to the suppression of both the proton transfer during the Gd(iPrCp)3 half cycle as well as the parasitic CVD reactions.

研究了三(异丙基-环戊二烯基)钆(Gd(iPrCp)3)与O3原子层沉积(ALD) Gd2O3的过程,并研究了生成O3的O2/N2比的函数关系。在Gd(iPrCp)3半循环中,O3暴露后发生燃烧反应,质子转移和配体释放后,ALD使用低N2含量的O3导致羟基端表面形成。由于Gd2O3的吸湿性,这种情况导致寄生化学气相沉积(CVD)的存在。相比之下,高N2含量的长O3脉冲导致表面去羟基化,抑制Gd(iPrCp)3半循环期间的质子转移以及寄生CVD反应。
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引用次数: 4
Electrochemical Performance of Vanadium Oxide Coatings Grown using Atmospheric Pressure CVD 常压CVD法制备氧化钒涂层的电化学性能
Pub Date : 2015-11-10 DOI: 10.1002/cvde.201507193
Dimitra Vernardou, Maria Apostolopoulou, Dimitris Louloudakis, Nikolaos Katsarakis, Emmanouil Koudoumas

The growth of vanadium dioxide is carried out using chemical vapor deposition with N2 flow rates of 1, 1.4 and 2.2 L min−1 through the vanadium precursor bubbler. The presence of both monoclinic and metastable vanadium dioxide phases with the co-existence of nanocrystallites and outgrowths on the coating surface is observed for the 1 L min−1. Additionally, the electrochemical performance for this sample is enhanced and the specific discharge capacity was the highest presenting capacitance retention of 97% after 500 scans. Finally, it is found that the diffusion of Li+ through the cathode/electrolyte interface is easier enhancing its capacitive performance.

采用化学气相沉积法,N2流量分别为1、1.4和2.2 L min−1,通过钒前驱体起泡器生长二氧化钒。在1 L min−1温度下,涂层表面存在单斜相和亚稳态二氧化钒相,同时存在纳米晶和外生物。此外,该样品的电化学性能得到增强,在500次扫描后,该样品的比放电容量最高,电容保留率为97%。最后,发现Li+通过阴极/电解质界面的扩散更容易提高其电容性能。
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引用次数: 16
Hybrid Synergic Methodology to Prepare ALD Honey-Comb Anatase Films 复合协同法制备ALD蜂窝锐钛矿膜
Pub Date : 2015-11-10 DOI: 10.1002/cvde.201507183
Francesca Visentin, Naida El Habra, Monica Favaro, Simone Battiston, Rosalba Gerbasi, Laura Crociani, Alessandro Galenda

Macroporous inorganic structures with high surface-to-volume ratio have been recognized as a centre of interest in many fields. Here, attention is focused on a hybrid synergic methodology to prepare honey-comb (HC) anatase TiO2 films with increased specific surface area. The breath figures (BFs) method is exploited to produce HC polystyrene (PS) templates and atomic layer deposition (ALD) is used to conformally cover them with a TiO2 coating. Different approaches are tested to preserve the HC-TiO2 structure during the conversion of the hybrid organic/inorganic materials into crystalline anatase films. Best results are obtained operating with ALD at 180 °C on pre-UV cross-linked substrates.

具有高表面体积比的大孔无机结构已成为许多领域的研究热点。在这里,我们的注意力集中在一种混合协同方法上,以制备具有增加比表面积的蜂窝(HC)锐钛矿TiO2薄膜。利用呼吸图(BFs)方法生产HC聚苯乙烯(PS)模板,并使用原子层沉积(ALD)在其上覆盖TiO2涂层。在有机/无机杂化材料转化为锐钛矿晶体薄膜的过程中,测试了不同的方法来保持HC-TiO2结构。在预uv交联底物上使用ALD在180°C下操作获得最佳结果。
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引用次数: 2
A Process-Structure Investigation of Aluminum Oxide and Oxycarbide Thin Films prepared by Direct Liquid Injection CVD of Dimethylaluminum Isopropoxide (DMAI)† 直接液相注射CVD法制备二甲基异丙醇铝(DMAI)†氧化铝和碳化氧薄膜的工艺结构研究
Pub Date : 2015-11-10 DOI: 10.1002/cvde.201507190
Loïc Baggetto, Cédric Charvillat, Jérôme Esvan, Yannick Thébault, Diane Samélor, Hugues Vergnes, Brigitte Caussat, Alain Gleizes, Constantin Vahlas

We present the direct liquid injection CVD of aluminum oxide and oxycarbide thin films using dimethylaluminum isopropoxide at high process temperature (500–700 °C) with the addition of O2 gas, and at low temperature (150–300 °C) with the addition of H2O vapor. Very smooth films with typical roughness values lower than 2 nm are obtained. The thin films are composed of an amorphous material. The composition evolves as a function of temperature from that of a partial hydroxide to a stoichiometric oxide at low deposition temperature (150–300 °C), and from that of a stoichiometric oxide to a mixture of an oxide with an (oxy) carbide at higher temperature (500–700 °C).

本文介绍了在高温(500-700℃)和低温(150-300℃)下,在加入O2的条件下,用二甲基异丙醇铝直接液相注射CVD氧化铝和碳化氧薄膜。获得了典型粗糙度值低于2 nm的非常光滑的薄膜。薄膜是由非晶材料构成的。在较低的沉积温度(150-300°C)下,组成成分从部分氢氧化物演变为化学计量氧化物,在较高的沉积温度(500-700°C)下,从化学计量氧化物演变为氧化物与(氧)碳化物的混合物。
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引用次数: 7
A Facile Route to Thin Films of Zinc Carbodiimide Using Aerosol-assisted CVD 气溶胶辅助CVD制备碳二亚胺锌薄膜的捷径
Pub Date : 2015-11-10 DOI: 10.1002/cvde.201507179
Karl M. Kaye, William Grantham, Geoffrey Hyett

There has been a resurgence of interest in metal carbodiimides in recent years and in this paper we present a route to the synthesis of one of these phases, zinc carbodiimide, previously known as zinc cyanamide, in the form of a sub-micrometer thin film, using aerosol-assisted (AA)CVD from a solution of zinc acetate and urea in methanol, with the carbodiimide ion being formed from the decomposition of the urea molecule. Thin film synthesis is achieved over a deposition temperature range 375 − 500 °C, with a minimum ratio of urea to zinc acetate of 2:1 and a maximum of 5:1 established as viable for film formation. This work presents the first example of the synthesis of a ZnNCN thin film, or indeed any metal carbodiimide thin film, using a CVD technique.

近年来,人们对金属碳二亚胺的兴趣重新抬头,在本文中,我们提出了一种合成方法,以亚微米薄膜的形式合成碳二亚胺锌,以前称为氰酰胺锌,使用气溶胶辅助(AA)CVD从醋酸锌和尿素在甲醇中的溶液中合成,碳二亚胺离子由尿素分子分解形成。薄膜合成在375 - 500°C的沉积温度范围内实现,尿素与醋酸锌的最小比例为2:1,最大比例为5:1,可用于薄膜形成。这项工作提出了使用CVD技术合成ZnNCN薄膜或任何金属碳二亚胺薄膜的第一个例子。
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引用次数: 9
Photo-oxidation of Polymers Synthesized by Plasma and Initiated CVD† 等离子体与引发CVD合成聚合物的光氧化研究
Pub Date : 2015-11-09 DOI: 10.1002/cvde.201507173
Salmaan H. Baxamusa, Aravind Suresh, Paul Ehrmann, Ted Laurence, Jiries Hanania, Jeff Hayes, Stephen Harley, Daniel D. Burkey

Plasma polymers are often limited by their susceptibility to spontaneous and photo-oxidation. We show that the unusual photoluminescence (PL) behavior of a plasma polymer of trans-2-butene is correlated with its PL strength. These photo-processes occur under blue light illumination (λ = 405 nm), distinguishing them from traditional ultraviolet degradation of polymers. These photo-active defects are likely formed during the plasma deposition process, and we show that a polymer synthesized using initiated (i)CVD, a non-plasma method, has 1000× lower PL signal and enhanced photo-stability. Non-plasma methods, such as iCVD, may therefore be a route to overcoming material aging issues that limit the adoption of plasma polymers.

等离子体聚合物通常受其对自发和光氧化的敏感性所限制。我们证明了反式2-丁烯等离子体聚合物的不寻常的光致发光(PL)行为与其PL强度相关。这些光过程发生在蓝光照明下(λ = 405 nm),区别于传统的紫外线降解聚合物。这些光活性缺陷很可能是在等离子体沉积过程中形成的,我们表明,使用非等离子体方法引发(i)CVD合成的聚合物具有1000倍的低PL信号和光稳定性增强。因此,非等离子体方法,如iCVD,可能是克服限制等离子体聚合物采用的材料老化问题的一条途径。
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引用次数: 12
Cover image from Jones and co-workers (Chem Vap. Deposition 2010, 16, 257) Jones及其同事的封面图片(Chem Vap.Deposition 2010,16257)
Pub Date : 2015-09-23 DOI: 10.1002/cvde.201577891

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引用次数: 0
Plasma Enhanced Chemical Vapor Deposition of Poly(2,2,3,4,4,4-hexafluorobutyl acrylate) Thin Films† 等离子体增强化学气相沉积聚(2,2,3,4,4,4-六氟丙烯酸丁酯)薄膜†
Pub Date : 2015-09-23 DOI: 10.1002/cvde.201507168
Mustafa Karaman, Ezgi Yenice

The synthesis of poly(2,2,3,4,4,4-hexafluorobutyl acrylate) (PHFBA) thin films using plasma enhanced chemical vapor deposition (PECVD) method is reported. PHFBA is a non-toxic and low surface energy polymer containing a –CF3 end group, which makes PHFBA a suitable hydrophobic finish. The effects of plasma power and substrate temperature on chemical and morphological structure of as-deposited films are studied. A greater retention of the perfluoroalkyl functionality is found for the depositions carried out at low powers and high temperatures. PHFBA thin films show superhydrophobic properties when deposited on rough fiber mat surfaces with observed water contact angles greater than 150 degrees.

报道了用等离子体增强化学气相沉积(PECVD)法制备聚(2,2,3,4,4,4-六氟丙烯酸丁酯)(PHFBA)薄膜。PHFBA是一种无毒的低表面能聚合物,含有-CF3端基,这使得PHFBA成为一种合适的疏水整理剂。研究了等离子体功率和衬底温度对沉积薄膜化学和形态结构的影响。发现在低功率和高温下进行的沉积具有更大的全氟烷基功能保留。当PHFBA薄膜沉积在水接触角大于150度的粗糙纤维垫表面时,表现出超疏水性。
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引用次数: 16
Preparation of Highly Flexible SiC Nanowires by Fluidized Bed Chemical Vapor Deposition† 流化床化学气相沉积制备高柔性碳化硅纳米线
Pub Date : 2015-09-23 DOI: 10.1002/cvde.201507171
Rongzheng Liu, Malin Liu, Jiaxing Chang, Youlin Shao, Bing Liu

High flexible SiC nanowires with diameters in the range of 10 to 50 nm and lengths of several hundred micrometers to several millimeters are synthesized using a novel catalyst-assisted fluidized bed chemical vapor deposition method. Methyltrichlorosilane (MTS) is used as source material and particles containing cobalt were used as catalyst. The fluidized bed is specially designed to form a perpendicular uneven temperature distribution. Suspended nanosized liquid catalyst droplets are produced at middle high temperature zone and SiC nanowires are formed in situ on the catalyst droplets then accumulated at the upper part of fluidized bed. The nanowires exhibit a single crystal feature with some stacking faults. Transmission electron microscopy (TEM) analysis verifies a growth direction along the <111> axis of the nanowires. A blue shift optical emission band at about 420 nm is detected using photoluminescence spectroscopy. From the high-resolution TEM investigation, a nanoscale smooth plane between the nanowire and the catalyst tip is observed and the two phases exhibit highly epitaxial growth interface. The growth process of the nanowires is discussed and a possible formation mechanism is proposed.

采用新型催化辅助流化床化学气相沉积方法合成了直径在10 ~ 50 nm、长度在几百微米~几毫米之间的高柔性SiC纳米线。以甲基三氯硅烷(MTS)为原料,含钴颗粒为催化剂。流化床是专门设计的,以形成垂直的不均匀温度分布。在中高温区产生悬浮的纳米级液体催化剂液滴,在催化剂液滴上原位形成碳化硅纳米线,并在流化床上部积累。纳米线呈单晶结构,存在一些层错。透射电镜(TEM)分析证实了沿<111>纳米线的轴线。利用光致发光光谱法检测到约420 nm的蓝移光发射带。高分辨率透射电镜观察发现,纳米线与催化剂尖端之间存在纳米级光滑平面,两相呈现高度外延生长界面。讨论了纳米线的生长过程,并提出了可能的形成机理。
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引用次数: 4
Chem. Vap. Deposition (7–8–9/2015) 化学。Vap。沉积(2015年7月8日至9月)
Pub Date : 2015-09-23 DOI: 10.1002/cvde.201577892
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引用次数: 0
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Chemical Vapor Deposition
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