Pub Date : 2024-08-13DOI: 10.1109/tcsi.2024.3439580
Xiaofang Wu, Xiao Pan, Peng Sun, Jianyang Zhou
{"title":"Scalable Double Crosstalk Canceling Digital Predistortion for MIMO Transmitters","authors":"Xiaofang Wu, Xiao Pan, Peng Sun, Jianyang Zhou","doi":"10.1109/tcsi.2024.3439580","DOIUrl":"https://doi.org/10.1109/tcsi.2024.3439580","url":null,"abstract":"","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"13 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-13DOI: 10.1109/TCSI.2024.3430378
Siji Huang;Qifeng Huang;Yifei Fan;Qiwei Zhao;Yanhang Chen;Yihan Zhang;Jie Yuan
This paper presents an efficient 8-MS/s 16-bit successive approximation register (SAR) analog-to-digital converter (ADC) with the proposed symmetric complementary switching (SCS) and split passive reference segmentation (SPRS). Conventionally, improving the SAR ADC speed compromises the signal-to-noise-and-distortion ratio (SNDR) and energy efficiency due to the high precision requirement and the sequential bit-cycling. In this design, the proposed SCS scheme reduces the parasitic capacitance in the sampling path and the settling error of the capacitive digital-to-analog converter (CDAC) with low SNDR and hardware penalties. In addition, to reduce reference ripples, active reference buffers generally consume high power while the passive methods may degrade the SNDR or occupy large areas. To efficiently reduce reference settling errors, an area-efficient SPRS is developed, which suppresses the reference settling error through the split reference segmentation. The prototype chip is fabricated in a 180-nm CMOS process and occupies an area of 0.57 mm2. Measurements show the ADC achieves a peak SNDR of 89.2 dB at 8 MS/s with a 9.5-mW power consumption. The Schreier-figure-of-merit (FoM) is 175.4 dB.
{"title":"An 8-MS/s 16-bit SAR ADC With Symmetric Complementary Switching and Split Passive Reference Segmentation in 180-nm Process","authors":"Siji Huang;Qifeng Huang;Yifei Fan;Qiwei Zhao;Yanhang Chen;Yihan Zhang;Jie Yuan","doi":"10.1109/TCSI.2024.3430378","DOIUrl":"10.1109/TCSI.2024.3430378","url":null,"abstract":"This paper presents an efficient 8-MS/s 16-bit successive approximation register (SAR) analog-to-digital converter (ADC) with the proposed symmetric complementary switching (SCS) and split passive reference segmentation (SPRS). Conventionally, improving the SAR ADC speed compromises the signal-to-noise-and-distortion ratio (SNDR) and energy efficiency due to the high precision requirement and the sequential bit-cycling. In this design, the proposed SCS scheme reduces the parasitic capacitance in the sampling path and the settling error of the capacitive digital-to-analog converter (CDAC) with low SNDR and hardware penalties. In addition, to reduce reference ripples, active reference buffers generally consume high power while the passive methods may degrade the SNDR or occupy large areas. To efficiently reduce reference settling errors, an area-efficient SPRS is developed, which suppresses the reference settling error through the split reference segmentation. The prototype chip is fabricated in a 180-nm CMOS process and occupies an area of 0.57 mm2. Measurements show the ADC achieves a peak SNDR of 89.2 dB at 8 MS/s with a 9.5-mW power consumption. The Schreier-figure-of-merit (FoM) is 175.4 dB.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"71 10","pages":"4486-4498"},"PeriodicalIF":5.2,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents the system-level discussion, simulation design, and fabrication results of a novel analog ASIC - fabricated in 130nm BiCMOS technology - for interfacing resistive thermal sensors known as Fly Height Sensors (FHSs). FHSs are attached to the magnetic recording heads in modern hard disk drives (HDDs) to monitor the head-disk distance known as “fly height” by measuring the FHS resistance variation. The magnitude of the sensor signal serves as a measure of the proximity between the head and the disk surface which must accurately be controlled to minimize the fly height, thereby increasing the storage capacity of HDDs. The proposed interface includes two parts: 1) a dual-mode precise bias circuit that accurately provides a differential bias with a programmable common-mode voltage to the FHS in both voltage (V) and current (I) modes without requiring any calibrations, as well as featuring fast and smooth transient response, 2) front-end gain stages that create two separate signal paths with low- and high-frequency responses, called LF and HF blocks, utilized for controlling the fly height and mapping the roughness of the disk surface, respectively. The proposed bias circuit demonstrates high-impedance loading behavior on the sensor terminals in both V- and I- modes to have a unity signal gain at the sensor port and deliver it to the front-end amplifiers, resulting in an improvement of the overall noise performance of the interface. In addition, the bias noise power at the output of the LF block is suppressed to the extent of one order of magnitude thanks to deploying a noise cancellation technique. A low-noise and wide-bandwidth front-end is implemented for the HF block that eliminates the need for configuring the bias loop for having a low cutoff frequency, resulting in a reliable design with reduced complexity. Additionally, degenerated differential pairs with resistive loads, split tail currents, and Caprio’s quad offering low gain variation over the temperature and process are implemented as the front-end gain stages. The fabricated chip features an active area of 1.28 mm2with power consumption in the range of 110 to $172~mW$