Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380713
A. M. Hashim, K. Yasui
The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200degC. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3 ~ 0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals.
{"title":"Low Temperature Heteroepitaxial Growth of 3C-SiC on Si Substrates by Rapid Thermal Triode Plasma CVD using Dimethylsilane","authors":"A. M. Hashim, K. Yasui","doi":"10.1109/SMELEC.2006.380713","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380713","url":null,"abstract":"The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200degC. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3 ~ 0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126365591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381017
Dong-Wook Park, C. Lee, Keum-dong Jung, Byeongju Kim, Byung-Gook Park, Hyungcheol Shin, J. Lee
Organic thin-film transistors (OTFTs) with improved performance are fabricated using SiO2-cross-linked PVA double layer insulator. The improved field- effect mobility, on-current, off-current, on/off ratio, and subthreshold slope are 0.12 cm2/V-sec, 9.2times10-6 Aring, 2times10-12 Aring, 4.6times106, and 0.4 V/dec, respectively. In addition, a negligible threshold voltage shift is observed in the device. The performance improvements are attributed to good leakage characteristic of SiO2 and high-k characteristic of cross- linked PVA. Based on the proposed OTFTs, an organic inverter working as high as 1 kHz is implemented.
{"title":"Performance Improvement of OTFTs using Double Layer Insulator","authors":"Dong-Wook Park, C. Lee, Keum-dong Jung, Byeongju Kim, Byung-Gook Park, Hyungcheol Shin, J. Lee","doi":"10.1109/SMELEC.2006.381017","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381017","url":null,"abstract":"Organic thin-film transistors (OTFTs) with improved performance are fabricated using SiO2-cross-linked PVA double layer insulator. The improved field- effect mobility, on-current, off-current, on/off ratio, and subthreshold slope are 0.12 cm2/V-sec, 9.2times10-6 Aring, 2times10-12 Aring, 4.6times106, and 0.4 V/dec, respectively. In addition, a negligible threshold voltage shift is observed in the device. The performance improvements are attributed to good leakage characteristic of SiO2 and high-k characteristic of cross- linked PVA. Based on the proposed OTFTs, an organic inverter working as high as 1 kHz is implemented.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124853980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381076
A. Z. Zahirul Alam, M.R. Islam, S. Khan, B.M. Azlani, M.M. Bt. Abdul Razak
We report on reconfigurable antenna performance using RF MEMS switches dependency on material used for MEMS structure. Teflon as a MEMS structural material gives triple-band antenna operation at 17.21, 23.54 and 29.27 GHz with return loss -12.04, -19.37 and -17.34 dB, respectively. The design is performed using 3D electromagnetic simulators considering ideal MEMS switches. There is no shift of resonance frequency that occurred at 23.54 GHz when both the MEMS switches are either ON or OFF.
{"title":"MEMS Switch Material Dependency on Designing a Reconfigurable Antenna","authors":"A. Z. Zahirul Alam, M.R. Islam, S. Khan, B.M. Azlani, M.M. Bt. Abdul Razak","doi":"10.1109/SMELEC.2006.381076","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381076","url":null,"abstract":"We report on reconfigurable antenna performance using RF MEMS switches dependency on material used for MEMS structure. Teflon as a MEMS structural material gives triple-band antenna operation at 17.21, 23.54 and 29.27 GHz with return loss -12.04, -19.37 and -17.34 dB, respectively. The design is performed using 3D electromagnetic simulators considering ideal MEMS switches. There is no shift of resonance frequency that occurred at 23.54 GHz when both the MEMS switches are either ON or OFF.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124862349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380696
Keum-dong Jung, Byung-ju Kim, Byeong-Ju Kim, C. Lee, Dong-Wook Park, Byung-Gook Park, Hyungcheol Shin, J. Lee
C-V characteristics of pentacene MIS capacitors are obtained with various measurement conditions. High measuring frequency can decrease the measured capacitance due to the slow response of holes. When thick semiconductor is used, accurate C-V characteristics can not be obtained due to the resistance of bulk semiconductor. Bias stress makes positive or negative flat band voltage shift, also complicate accurate C-V measurement. Therefore, to obtain reliable C- V characteristics of organic MIS capacitors, these properties should be considered.
{"title":"Considerations on the C-V Characteristics of Pentacene Metal-Insulator-Semiconductor Capacitors","authors":"Keum-dong Jung, Byung-ju Kim, Byeong-Ju Kim, C. Lee, Dong-Wook Park, Byung-Gook Park, Hyungcheol Shin, J. Lee","doi":"10.1109/SMELEC.2006.380696","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380696","url":null,"abstract":"C-V characteristics of pentacene MIS capacitors are obtained with various measurement conditions. High measuring frequency can decrease the measured capacitance due to the slow response of holes. When thick semiconductor is used, accurate C-V characteristics can not be obtained due to the resistance of bulk semiconductor. Bias stress makes positive or negative flat band voltage shift, also complicate accurate C-V measurement. Therefore, to obtain reliable C- V characteristics of organic MIS capacitors, these properties should be considered.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125112828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380685
H. Gharaee, A. Nabavi, B. Bornoosh, S. M. Fakhraei
In this paper a digital UWB transceiver is designed with a bit-rate of 200 Mb/s. System simulations propose an SNR of 10 dB, and 4-bit of resolution with 4 GHz sampling rate for analog to digital conversion. Hardware of this system is implemented on a Virtex-II Pro chip (XC2VP20). The critical digital blocks operate with a minimum frequency of 200 MHz. The total power in this system is 400 mw.
{"title":"A Digital Implementation for UWB Impulse Radio Transceiver","authors":"H. Gharaee, A. Nabavi, B. Bornoosh, S. M. Fakhraei","doi":"10.1109/SMELEC.2006.380685","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380685","url":null,"abstract":"In this paper a digital UWB transceiver is designed with a bit-rate of 200 Mb/s. System simulations propose an SNR of 10 dB, and 4-bit of resolution with 4 GHz sampling rate for analog to digital conversion. Hardware of this system is implemented on a Virtex-II Pro chip (XC2VP20). The critical digital blocks operate with a minimum frequency of 200 MHz. The total power in this system is 400 mw.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124162283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381067
M.S. Bin Ab-Rahman, A. Ehsan, H. Husin, S. Shaari
The optical cross add and drop multiplexing (OXADM) device described in this paper increases the capacity, flexibility and reliability of the trunk-line optical network used for data communication. It features two different bandwidths which operate in working and protection line in a ring configuration. The OXADM has the same features of the conventional OADM node but with more efficiency and reliability. The OXADM prototype system focuses on providing survivability through restoration against failures, such as cable/fiber cut in optical layer with ring topology. Two types of restoration scheme have been proposed to ensure data flow continuously by means of linear/multiplex protection and ring protection. This paper describes the analytical modeling of OXADM and studies their limitation as compared with conventional OXC device.
{"title":"Analytical Modeling of Optical Cross Add and Drop Multiplexing Switch","authors":"M.S. Bin Ab-Rahman, A. Ehsan, H. Husin, S. Shaari","doi":"10.1109/SMELEC.2006.381067","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381067","url":null,"abstract":"The optical cross add and drop multiplexing (OXADM) device described in this paper increases the capacity, flexibility and reliability of the trunk-line optical network used for data communication. It features two different bandwidths which operate in working and protection line in a ring configuration. The OXADM has the same features of the conventional OADM node but with more efficiency and reliability. The OXADM prototype system focuses on providing survivability through restoration against failures, such as cable/fiber cut in optical layer with ring topology. Two types of restoration scheme have been proposed to ensure data flow continuously by means of linear/multiplex protection and ring protection. This paper describes the analytical modeling of OXADM and studies their limitation as compared with conventional OXC device.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"287 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123452720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381059
M.S. Selamat, B. Yeop Majlis
Security is one of the most important aspects of prison management, which includes security of inmate, staff as well as the public. This paper studies two inmate tagging solutions, which work effectively to enhance numbers of correctional institution in the U.S.. They are Clincherreg wristband identification from Precision Dynamics Corporation (PDC) and the TSI Prismtrade real-time tracking from Alanco / TSI Prism, Inc. (TSI). Features and advantages of the inmates tagging systems are highlighted.
安全是监狱管理的一个重要方面，包括囚犯、工作人员和公众的安全。本文研究了两种囚犯标签解决方案，它们有效地增加了美国惩教机构的数量。它们是精密动力公司(PDC)的Clincherreg腕带识别和Alanco / TSI Prism公司(TSI)的TSI Prismtrade实时跟踪。强调了犯人标签系统的特点和优点。
{"title":"Considering RFID Inmate Tagging Application to Enhance Prison Management","authors":"M.S. Selamat, B. Yeop Majlis","doi":"10.1109/SMELEC.2006.381059","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381059","url":null,"abstract":"Security is one of the most important aspects of prison management, which includes security of inmate, staff as well as the public. This paper studies two inmate tagging solutions, which work effectively to enhance numbers of correctional institution in the U.S.. They are Clincherreg wristband identification from Precision Dynamics Corporation (PDC) and the TSI Prismtrade real-time tracking from Alanco / TSI Prism, Inc. (TSI). Features and advantages of the inmates tagging systems are highlighted.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"609 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121980369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381051
S. Kouravand, M. Mehrban, G. Rezazadeh, M. Sabet
This paper presents a novel tunable capacitor with bimetallic thermal actuator in micro scale which its design was based on the tip deflection of bimetallic cantilever beam. Thermo electro mechanical governing equations were derived. Design steps are described and calculated results show that using of the proposed tunable capacitor can achieve large tuning ratio.
{"title":"Analytical Model Studying of a Novel Tunable Capacitor Based on Bimetallic Thermal Actuator","authors":"S. Kouravand, M. Mehrban, G. Rezazadeh, M. Sabet","doi":"10.1109/SMELEC.2006.381051","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381051","url":null,"abstract":"This paper presents a novel tunable capacitor with bimetallic thermal actuator in micro scale which its design was based on the tip deflection of bimetallic cantilever beam. Thermo electro mechanical governing equations were derived. Design steps are described and calculated results show that using of the proposed tunable capacitor can achieve large tuning ratio.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124995657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380786
K. Munusamy, Z. Yusoff
This paper presents a high linearity CMOS down conversion double balanced mixer for IEEE802.11/g Wireless LAN application with 2.4 GHz operating frequency. In this Gilbert type mixer design, various high linearity techniques have been incorporated such as current-reuse bleeding technique, common gate transconductance amplifier configuration and tuned loads techniques. All these techniques were combined into a single design and the comparison of this proposed mixer with the recent literature shows significant improvement in linearity parameters such as intermodulation (IMR3), third-order input intercept point (IIP3) and 1dB compression point without degrading other important parameters. The mixer structure is designed using TSMC 0.25 mum standard CMOS technology and is simulated using EldoRF simulator from Mentor Graphics environment. The mixer's simulated result shows the input intercept point (IIP3) of 12.810 dB, the intermodulation IMR3 of 129.816dB and the 1 dB compression point of 5.075 dB. The mixer operates at 1.8 V with 13.30 mW power consumption. Meanwhile, the measured conversion gain and noise figure of this double balanced mixer were -2.688 dB and 13.678 dB respectively.
{"title":"A Highly Linear CMOS Down Conversion Double Balanced Mixer","authors":"K. Munusamy, Z. Yusoff","doi":"10.1109/SMELEC.2006.380786","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380786","url":null,"abstract":"This paper presents a high linearity CMOS down conversion double balanced mixer for IEEE802.11/g Wireless LAN application with 2.4 GHz operating frequency. In this Gilbert type mixer design, various high linearity techniques have been incorporated such as current-reuse bleeding technique, common gate transconductance amplifier configuration and tuned loads techniques. All these techniques were combined into a single design and the comparison of this proposed mixer with the recent literature shows significant improvement in linearity parameters such as intermodulation (IMR3), third-order input intercept point (IIP3) and 1dB compression point without degrading other important parameters. The mixer structure is designed using TSMC 0.25 mum standard CMOS technology and is simulated using EldoRF simulator from Mentor Graphics environment. The mixer's simulated result shows the input intercept point (IIP3) of 12.810 dB, the intermodulation IMR3 of 129.816dB and the 1 dB compression point of 5.075 dB. The mixer operates at 1.8 V with 13.30 mW power consumption. Meanwhile, the measured conversion gain and noise figure of this double balanced mixer were -2.688 dB and 13.678 dB respectively.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122090440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380773
W. Z. Wan Hasan, M. Othman, B. Suparjo
Testing and diagnosis techniques play a key role during the advance of semiconductor memory technologies. The challenge of failure detection has created intensive investigation on efficient testing and diagnosis algorithm for better fault coverage and yield improvement. The test and diagnosis complexity are 12N for bit-oriented diagnosis algorithm, N is the number of addresses is proposed for fault detection and diagnosis. Using the proposed march-based algorithm (march-12N), 100% of the faults under the fault model are covered and partial distinguished. They also can locate the faulty cells and identify their types. The complete fault and diagnosis procedures for state coupling faults, idempotent coupling faults and inversion coupling faults are written in this paper. Therefore, all the coupling faults that occur in SRAM memories are verified and proved the valid results. Furthermore, the realistic 12N test and diagnosis algorithm has shown the improvement of diagnostic resolution and test time.
{"title":"A Realistic March-12N Test And Diagnosis Algorithm For SRAM Memories","authors":"W. Z. Wan Hasan, M. Othman, B. Suparjo","doi":"10.1109/SMELEC.2006.380773","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380773","url":null,"abstract":"Testing and diagnosis techniques play a key role during the advance of semiconductor memory technologies. The challenge of failure detection has created intensive investigation on efficient testing and diagnosis algorithm for better fault coverage and yield improvement. The test and diagnosis complexity are 12N for bit-oriented diagnosis algorithm, N is the number of addresses is proposed for fault detection and diagnosis. Using the proposed march-based algorithm (march-12N), 100% of the faults under the fault model are covered and partial distinguished. They also can locate the faulty cells and identify their types. The complete fault and diagnosis procedures for state coupling faults, idempotent coupling faults and inversion coupling faults are written in this paper. Therefore, all the coupling faults that occur in SRAM memories are verified and proved the valid results. Furthermore, the realistic 12N test and diagnosis algorithm has shown the improvement of diagnostic resolution and test time.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126595696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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