Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380774
Wong Yah Jin, I. Saad, R. Ismail
The paper is looking into the enhancement of conventional PMOS by incorporating a strained silicon within the channel and bulk of semiconductor. A detailed 2D process simulation of strained silicon PMOS (SSPMos) and its electrical characterization was done using TCAD tool. With the oxide thickness, Tox of 16 nm and germanium concentration of 35%, the threshold voltage Vt for the strained Si and conventional PMOS is -0.5067V and -0.9290V respectively. This indicates that the strained silicon had lower power consumption. Beside that, the drain induced barrier lowering (DIBL) value for the strained PMOS is 0.3034V and the conventional PMOS is 0.4747V, which shows a better performance for strained silicon as compared to conventional PMOS. In addition, the output characteristics were also obtained for SSPMos which showed an improvement of drain current compared with conventional PMOS.
{"title":"Characterization of Strained Silicon MOSFET Using Semiconductor TCAD Tools","authors":"Wong Yah Jin, I. Saad, R. Ismail","doi":"10.1109/SMELEC.2006.380774","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380774","url":null,"abstract":"The paper is looking into the enhancement of conventional PMOS by incorporating a strained silicon within the channel and bulk of semiconductor. A detailed 2D process simulation of strained silicon PMOS (SSPMos) and its electrical characterization was done using TCAD tool. With the oxide thickness, Tox of 16 nm and germanium concentration of 35%, the threshold voltage Vt for the strained Si and conventional PMOS is -0.5067V and -0.9290V respectively. This indicates that the strained silicon had lower power consumption. Beside that, the drain induced barrier lowering (DIBL) value for the strained PMOS is 0.3034V and the conventional PMOS is 0.4747V, which shows a better performance for strained silicon as compared to conventional PMOS. In addition, the output characteristics were also obtained for SSPMos which showed an improvement of drain current compared with conventional PMOS.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131827849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380692
I. Saad, R. Ismail
Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high performance transistor by using 2D process and device numerical simulation. Accurate geometrical structure and reasonably good doping profiles with a simple fabrication process are successfully achieved in the process simulation. However, a careful attention is required to define the mesh for the device to obtain an accurate measurement of device characteristics. With a base, low-doped collector, emitter and high-doped collector concentrations of 3 times 1017 cm-3, 1.0 times 1017 cm-3, 5 times 1020 cm-3 and 3 times 1020 cm-3 respectively, a variation of 0.1-0.13 mum base width is observed. I-V and frequency performance of these transistors are simulated and analyzed. Y-parameter measurement at frequency 10 MHz - 1000 GHz shows a 21 GHz fmax was successfully achieved at VBE=0.7 V, VCE=2.0 V and ICE=6.0 muA.
{"title":"Design and Simulation of a High Performance Lateral BJTs on TFSOI","authors":"I. Saad, R. Ismail","doi":"10.1109/SMELEC.2006.380692","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380692","url":null,"abstract":"Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz f<sub>max</sub> novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high performance transistor by using 2D process and device numerical simulation. Accurate geometrical structure and reasonably good doping profiles with a simple fabrication process are successfully achieved in the process simulation. However, a careful attention is required to define the mesh for the device to obtain an accurate measurement of device characteristics. With a base, low-doped collector, emitter and high-doped collector concentrations of 3 times 10<sup>17</sup> cm<sup>-3</sup>, 1.0 times 10<sup>17</sup> cm<sup>-3</sup>, 5 times 10<sup>20</sup> cm<sup>-3</sup> and 3 times 10<sup>20</sup> cm<sup>-3</sup> respectively, a variation of 0.1-0.13 mum base width is observed. I-V and frequency performance of these transistors are simulated and analyzed. Y-parameter measurement at frequency 10 MHz - 1000 GHz shows a 21 GHz f<sub>max</sub> was successfully achieved at V<sub>BE</sub>=0.7 V, V<sub>CE</sub>=2.0 V and I<sub>CE</sub>=6.0 muA.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128321795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381109
R. Hallaji, A. Abdipour, G. Moradi
Ultra wideband matrix mixer using well known harmonic balance (HB) technique is analyzed. Matrix structure gives a suitable conversion gain. The proposed structure contains FET elements in each row and column, and causes an improved performance including conversion gain and output power. Mixer performance is analyzed in ultra wide band (UWB). The structure is used in UWB circuits and systems such as RFID cards.
{"title":"Design and Analysis of an Ultra Wideband Matrix Mixer","authors":"R. Hallaji, A. Abdipour, G. Moradi","doi":"10.1109/SMELEC.2006.381109","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381109","url":null,"abstract":"Ultra wideband matrix mixer using well known harmonic balance (HB) technique is analyzed. Matrix structure gives a suitable conversion gain. The proposed structure contains FET elements in each row and column, and causes an improved performance including conversion gain and output power. Mixer performance is analyzed in ultra wide band (UWB). The structure is used in UWB circuits and systems such as RFID cards.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123103175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380776
S. Ng, F. Yam, Z. Hassan, H. Abu Hassan
In this work, the effects of Al mole fraction on energy band gap (Eg) of AlxGa1-xN epilayers grown on sapphire substrate are investigated. Attention is focused on the Ga- rich composition samples (0 les x < 0.10). The Al-mole fraction is determined by high- resolution X-ray diffraction (HR-XRD) spectroscopy. Ultraviolet-visible (UV-VIS) transmission and micro-photoluminescence (mu-PL) spectroscopy are employed to determine the energy band gap of the samples. The XRD results revealed that the Bragg angle of the rocking curve (RC) peak gradually increases as the Al-mole fraction increases, indicating the reductions in the lattice constant c of the alloys. By the application of Vegard's law, the Al-mole fractions of AlxGa1-xN samples have been calculated. Overall, the UV-VIS transmission and mu-PL results showed that as the Al-mole fraction increases, blue shifts of the absorption edge and band edge emission are observed in all samples. These indicate the strong dependence of the band gap energy of AlxGa1-xN on the Al-mole fraction. Finally, the band gap energy of the AlxGa1-xN as a function of Al-mole fraction have been plotted and the energy band gap bowing parameter of 14.62 eV is obtained from the best fit of the non-linear interpolation of the UV-VIS transmission and the PL data.
本文研究了Al摩尔分数对蓝宝石衬底生长的AlxGa1-xN薄膜能带隙(Eg)的影响。重点关注富Ga成分样品(0 les x < 0.10)。采用高分辨率x射线衍射(HR-XRD)光谱法测定了铝摩尔分数。采用紫外-可见(UV-VIS)透射光谱和微光致发光(mu-PL)光谱测定样品的能带隙。XRD结果表明，随着al摩尔分数的增加，摇摆曲线(RC)峰的Bragg角逐渐增大，表明合金的晶格常数c降低。应用维加德定律，计算了AlxGa1-xN样品的al -摩尔分数。综上所述，UV-VIS透射和mu-PL结果表明，随着al摩尔分数的增加，所有样品的吸收边和带边发射都发生了蓝移。这表明AlxGa1-xN的带隙能与al摩尔分数有很强的相关性。最后，绘制了AlxGa1-xN的带隙能量随al摩尔分数的函数图，并将紫外-可见透射率的非线性插值与PL数据进行最佳拟合，得到带隙弯曲参数为14.62 eV。
{"title":"The Energy Band Gap of AlxGa1-xN Thin Films as a Function of Al-Mole Fraction","authors":"S. Ng, F. Yam, Z. Hassan, H. Abu Hassan","doi":"10.1109/SMELEC.2006.380776","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380776","url":null,"abstract":"In this work, the effects of Al mole fraction on energy band gap (Eg) of AlxGa1-xN epilayers grown on sapphire substrate are investigated. Attention is focused on the Ga- rich composition samples (0 les x < 0.10). The Al-mole fraction is determined by high- resolution X-ray diffraction (HR-XRD) spectroscopy. Ultraviolet-visible (UV-VIS) transmission and micro-photoluminescence (mu-PL) spectroscopy are employed to determine the energy band gap of the samples. The XRD results revealed that the Bragg angle of the rocking curve (RC) peak gradually increases as the Al-mole fraction increases, indicating the reductions in the lattice constant c of the alloys. By the application of Vegard's law, the Al-mole fractions of AlxGa1-xN samples have been calculated. Overall, the UV-VIS transmission and mu-PL results showed that as the Al-mole fraction increases, blue shifts of the absorption edge and band edge emission are observed in all samples. These indicate the strong dependence of the band gap energy of AlxGa1-xN on the Al-mole fraction. Finally, the band gap energy of the AlxGa1-xN as a function of Al-mole fraction have been plotted and the energy band gap bowing parameter of 14.62 eV is obtained from the best fit of the non-linear interpolation of the UV-VIS transmission and the PL data.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129523494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380718
Minseok Choi, Youngho Jung, Y. J. Yoon, Young-Wug Kim, Hyungcheol Shin
This work presents the design and fabrication of the LC voltage-controlled oscillator (VCO) using 1-poly 3-metal CMOS process aimed for use in current memory manufacturing process. Poor characteristics of highly-resistive and immune to substrate-coupling metal-3 inductor in LC resonator were overcome by dual metal structure and patterned-ground shield (PGS) strategy. Fabricated VCO operated from 2.48 GHz to 2.73 GHz tuned by accumulation-mode MOS varactor. The corresponding tuning range was 250 MHz. The measured phase noise was - 113.5 dBc/Hz at 1 MHz offset at 2.48 GHz carrier frequency. The current consumption and corresponding power consumption were about 1.04 mA and 1.87 mW respectively.
{"title":"Integrated LC VCO Compatible with Memory Process for Gigahertz Clock Generation","authors":"Minseok Choi, Youngho Jung, Y. J. Yoon, Young-Wug Kim, Hyungcheol Shin","doi":"10.1109/SMELEC.2006.380718","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380718","url":null,"abstract":"This work presents the design and fabrication of the LC voltage-controlled oscillator (VCO) using 1-poly 3-metal CMOS process aimed for use in current memory manufacturing process. Poor characteristics of highly-resistive and immune to substrate-coupling metal-3 inductor in LC resonator were overcome by dual metal structure and patterned-ground shield (PGS) strategy. Fabricated VCO operated from 2.48 GHz to 2.73 GHz tuned by accumulation-mode MOS varactor. The corresponding tuning range was 250 MHz. The measured phase noise was - 113.5 dBc/Hz at 1 MHz offset at 2.48 GHz carrier frequency. The current consumption and corresponding power consumption were about 1.04 mA and 1.87 mW respectively.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129559524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380795
P. Beow Yew Tan, A. Victor Kordesch, O. Sidek
In this paper we analyzed the mismatch characteristics of poly resistors. We found that the P+ poly resistor mismatch characteristics do not follow the linear inverse square root dependence. Instead, the P+ poly resistor mismatch follows the quadratic of inverse square root (or a simple inverse area) dependence. N+ poly resistor mismatch, however does obey the expected standard inverse square root dependence.
{"title":"Analysis of Poly Resistor Mismatch","authors":"P. Beow Yew Tan, A. Victor Kordesch, O. Sidek","doi":"10.1109/SMELEC.2006.380795","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380795","url":null,"abstract":"In this paper we analyzed the mismatch characteristics of poly resistors. We found that the P+ poly resistor mismatch characteristics do not follow the linear inverse square root dependence. Instead, the P+ poly resistor mismatch follows the quadratic of inverse square root (or a simple inverse area) dependence. N+ poly resistor mismatch, however does obey the expected standard inverse square root dependence.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134572791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380719
M. Jalali, M. Moravvej-Farshi, A. Nabavi
In this paper, the authors present a new DC-coupled single-ended to differential method suitable for transimpedance amplifier in low-voltage optical communication system applications. The single-ended to differential operation is realized using gm-boosting technique. As an example for applying this method, gm-boosting technique is implemented by capacitor cross coupling of two basic common-gate stage. Also a method for achieving DC-coupled operation, despite capacitor coupling, is presented and discussed.
{"title":"A Novel DC-Coupled, Single-Ended to Differential, Transimpedance Amplifier Architecture Based on gm-boosting Technique","authors":"M. Jalali, M. Moravvej-Farshi, A. Nabavi","doi":"10.1109/SMELEC.2006.380719","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380719","url":null,"abstract":"In this paper, the authors present a new DC-coupled single-ended to differential method suitable for transimpedance amplifier in low-voltage optical communication system applications. The single-ended to differential operation is realized using gm-boosting technique. As an example for applying this method, gm-boosting technique is implemented by capacitor cross coupling of two basic common-gate stage. Also a method for achieving DC-coupled operation, despite capacitor coupling, is presented and discussed.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132275972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381056
M. Soroosh, M. Jalali, M. Moravvej-Farshi
Using the finite difference time domain method (FDTD), we solve the Maxwell equations in resonant cavity photodetector. Then we obtain the optical field density and quantum efficiency. Also, the effect of bragg space and reflector are calculated.
{"title":"Calculation of Quantum Efficiency for Resonant Cavity Photodiodes using the FDTD Method","authors":"M. Soroosh, M. Jalali, M. Moravvej-Farshi","doi":"10.1109/SMELEC.2006.381056","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381056","url":null,"abstract":"Using the finite difference time domain method (FDTD), we solve the Maxwell equations in resonant cavity photodetector. Then we obtain the optical field density and quantum efficiency. Also, the effect of bragg space and reflector are calculated.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114879484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381103
M. Hashim, Y. Yusoff, Mohd Rais Ahmad
This paper presents a 10-bit 50-MSPS pipelined ADC targeted to 0.35 um CMOS technology. The main characteristics of pipelined ADC such as signal to noise and distortion ratio (SNDR), spurious free dynamic range (SFDR), differential non-linearity (DNL), integral non-linearity (INL) and power consumption are simulated in HSPICEreg. In this simulation, a full-scale of Nyquist-frequency sine-wave input is used. The results show the designed pipelined ADC achieves a SNDR of 58 dB, SFDR of 70 dB, maximum differential nonlinearity (DNL) and integral nonlinearity (INL) are less than 0.5 least significant bit (LSB) and a power consumption of 350-mW.
本文提出了一种针对0.35 um CMOS技术的10位50 msps流水线ADC。在HSPICEreg中模拟了管道ADC的主要特性，如信噪比(SNDR)、无杂散动态范围(SFDR)、微分非线性(DNL)、积分非线性(INL)和功耗。在这个模拟中，使用了一个满量程的奈奎斯特频率正弦波输入。结果表明，所设计的流水线ADC的SNDR为58 dB, SFDR为70 dB，最大差分非线性(DNL)和积分非线性(INL)均小于0.5最低有效位(LSB)，功耗为350 mw。
{"title":"A 10-Bit 50-MSPS Pipelined CMOS ADC","authors":"M. Hashim, Y. Yusoff, Mohd Rais Ahmad","doi":"10.1109/SMELEC.2006.381103","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381103","url":null,"abstract":"This paper presents a 10-bit 50-MSPS pipelined ADC targeted to 0.35 um CMOS technology. The main characteristics of pipelined ADC such as signal to noise and distortion ratio (SNDR), spurious free dynamic range (SFDR), differential non-linearity (DNL), integral non-linearity (INL) and power consumption are simulated in HSPICEreg. In this simulation, a full-scale of Nyquist-frequency sine-wave input is used. The results show the designed pipelined ADC achieves a SNDR of 58 dB, SFDR of 70 dB, maximum differential nonlinearity (DNL) and integral nonlinearity (INL) are less than 0.5 least significant bit (LSB) and a power consumption of 350-mW.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114613724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381113
H. A. Hamid, M. Abdullah, A. Aziz, S. A. Rosli
Aluminium doped zinc thin films were deposited on silicon substrates using direct current (DC) magnetron sputtering in argon atmosphere. These films were then annealed in nitrogen-oxygen mixed gases for 1 hour at temperature range of 200degC to 500degC. P-type conduction of Al - N codoped ZnO thin films were obtained for all temperatures with a high hole concentration of 1.85 times 1022 cm-3.
{"title":"Electrical Properties of p-Type Al - N Codoped ZnO Thin Films","authors":"H. A. Hamid, M. Abdullah, A. Aziz, S. A. Rosli","doi":"10.1109/SMELEC.2006.381113","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381113","url":null,"abstract":"Aluminium doped zinc thin films were deposited on silicon substrates using direct current (DC) magnetron sputtering in argon atmosphere. These films were then annealed in nitrogen-oxygen mixed gases for 1 hour at temperature range of 200degC to 500degC. P-type conduction of Al - N codoped ZnO thin films were obtained for all temperatures with a high hole concentration of 1.85 times 1022 cm-3.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"382 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133941809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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