Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573609
N. Othman, M. K. Md Arshad, S. Sabki, S. R. Kasjoo, U. Hashim
In this work, we report on the influence of underlap architecture (LUL) and ground plane (GP) on the analog/RF performance metrics of Ultra-Thin Body and Buried Oxide (UTBB) Fully-Depleted (FD) SOI MOSFETs with 25 nm gate length. Small-signal transconductance (gm), gate-to-gate capacitance (Cgg) and the cut-off frequency (ft) are the figures-of-merit (FoM) of interest. It is shown that longer underlap i.e. LUL = 10 nm showed lower gm. However, it is noted that Cgg also decreases as the underlap increases. Thus, the need for trade-off between gm and Cgg is needed to achieve optimum values of ft. From this work, it is found that the impact of gm on ft is more prominent than Cgg. From another point of view, the impact of different GP structures on gm and ft becomes more apparent at longer underlap.
在这项工作中，我们报告了覆盖结构(LUL)和地平面(GP)对具有25 nm栅极长度的超薄体和埋藏氧化物(UTBB)全耗尽(FD) SOI mosfet的模拟/RF性能指标的影响。小信号跨导(gm)、门对门电容(Cgg)和截止频率(ft)是我们感兴趣的优值(FoM)。结果表明，较长的覆盖(即LUL = 10 nm)显示较低的gm。然而，值得注意的是，Cgg也随着覆盖的增加而降低。因此，需要在gm和Cgg之间进行权衡，以达到ft的最优值。从这项工作中，我们发现gm对ft的影响比Cgg更突出。从另一个角度来看，不同GP结构对gm和ft的影响在较长的覆盖下变得更加明显。
{"title":"UTBB SOI MOSFETs with gate-source/drain underlap and ground plane (GP) structures for analog/RF applications","authors":"N. Othman, M. K. Md Arshad, S. Sabki, S. R. Kasjoo, U. Hashim","doi":"10.1109/SMELEC.2016.7573609","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573609","url":null,"abstract":"In this work, we report on the influence of underlap architecture (L<sub>UL</sub>) and ground plane (GP) on the analog/RF performance metrics of Ultra-Thin Body and Buried Oxide (UTBB) Fully-Depleted (FD) SOI MOSFETs with 25 nm gate length. Small-signal transconductance (g<sub>m</sub>), gate-to-gate capacitance (C<sub>gg</sub>) and the cut-off frequency (f<sub>t</sub>) are the figures-of-merit (FoM) of interest. It is shown that longer underlap i.e. L<sub>UL</sub> = 10 nm showed lower g<sub>m</sub>. However, it is noted that C<sub>gg</sub> also decreases as the underlap increases. Thus, the need for trade-off between g<sub>m</sub> and C<sub>gg</sub> is needed to achieve optimum values of f<sub>t</sub>. From this work, it is found that the impact of g<sub>m</sub> on f<sub>t</sub> is more prominent than C<sub>gg</sub>. From another point of view, the impact of different GP structures on g<sub>m</sub> and f<sub>t</sub> becomes more apparent at longer underlap.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134392262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573631
C. M. Tan, M. K. Md Arshad, M. Fathil, R. Adzhri, M. Nuzaihan, A. R. Ruslinda, C. Ibau, U. Hashim
In this paper, an interdigitated electrodes (IDEs) biosensor integrated with zinc oxide (ZnO) nanoparticles thin film as transducer is presented, which is capable of converting the biological interaction into electrical signal of cardiac troponin I (cTnI), a gold standard biomarker for Acute Myocardial Infarction (AMI). Conventional photolithography methods are applied to fabricate the device on a silicon wafer. The surface ZnO nanoparticles thin film is functionalized with bi-linkers and cTnI monoclonal antibodies via covalent binding for capturing the cTnI target biomarkers. The fabricated biosensor is electrically characterized by using Keithley 6487 picoammeter. The changes in the current flow are compared between before and after cTnI biomarkers binding at different concentrations. The biosensor had successfully demonstrated detection of cTnI biomarker in the concentration range of 1 ng/ml to 10 μg/mL. The achieved sensitivity and detection limit of 15.806 nA*(g/mL)-1 and 2.191 ng/mL, respectively, show that biosensor has great properties for detection of cTnI.
{"title":"Interdigitated Electrodes integrated with zinc oxide nanoparticles for Cardiac Troponin I biomarker detection","authors":"C. M. Tan, M. K. Md Arshad, M. Fathil, R. Adzhri, M. Nuzaihan, A. R. Ruslinda, C. Ibau, U. Hashim","doi":"10.1109/SMELEC.2016.7573631","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573631","url":null,"abstract":"In this paper, an interdigitated electrodes (IDEs) biosensor integrated with zinc oxide (ZnO) nanoparticles thin film as transducer is presented, which is capable of converting the biological interaction into electrical signal of cardiac troponin I (cTnI), a gold standard biomarker for Acute Myocardial Infarction (AMI). Conventional photolithography methods are applied to fabricate the device on a silicon wafer. The surface ZnO nanoparticles thin film is functionalized with bi-linkers and cTnI monoclonal antibodies via covalent binding for capturing the cTnI target biomarkers. The fabricated biosensor is electrically characterized by using Keithley 6487 picoammeter. The changes in the current flow are compared between before and after cTnI biomarkers binding at different concentrations. The biosensor had successfully demonstrated detection of cTnI biomarker in the concentration range of 1 ng/ml to 10 μg/mL. The achieved sensitivity and detection limit of 15.806 nA*(g/mL)-1 and 2.191 ng/mL, respectively, show that biosensor has great properties for detection of cTnI.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133512650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573644
A. F. Muhammad Alimin, S. F. Wan Muhamad Hatta, N. Soin
Negative Bias Temperature Instability (NBTI) has become a key reliability concern in semiconductor industries as devices are scaled down. A simulation study had been done on 32 nm technology node PMOS using Synopsys TCAD Sentaurus simulator tool. This paper presents the effect of gate length on NBTI of 32 nm advanced technology high-k metal gate (HKMG) PMOSFET. The effect on the device parameters such as threshold voltage (Vth), drain current (Id) and the lifetime of the device had been studied and discussed in detail. It is found that NBTI is not highly dependent on gate length at low oxide field (Eox) while at higher Eox, longer gate length is shown to significantly affect the Vth degradation where Vth degradation in longer gate length is found to be lowered by 23.39% compared to the shorter.
{"title":"Effect of gate length on Negative Bias Temperature Instability of 32nm advanced technology HKMG PMOSFET","authors":"A. F. Muhammad Alimin, S. F. Wan Muhamad Hatta, N. Soin","doi":"10.1109/SMELEC.2016.7573644","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573644","url":null,"abstract":"Negative Bias Temperature Instability (NBTI) has become a key reliability concern in semiconductor industries as devices are scaled down. A simulation study had been done on 32 nm technology node PMOS using Synopsys TCAD Sentaurus simulator tool. This paper presents the effect of gate length on NBTI of 32 nm advanced technology high-k metal gate (HKMG) PMOSFET. The effect on the device parameters such as threshold voltage (Vth), drain current (Id) and the lifetime of the device had been studied and discussed in detail. It is found that NBTI is not highly dependent on gate length at low oxide field (Eox) while at higher Eox, longer gate length is shown to significantly affect the Vth degradation where Vth degradation in longer gate length is found to be lowered by 23.39% compared to the shorter.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123902027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573599
I. Saad, Hazwani Syazana B. Andee, Seng C. Bun, Zuhir H. Mohd, N. Bolong
Dual Channel Vertical Strained Impact Ionization MOSFET (DC-VESIMOS) device shows superb performance with lower subthreshold slope (S) value of 11.48mV/dec and high range of ON and OFF current of 1013 obtained which indicates fast switching behavior and low leakage current respectively by using Silvaco's TCAD. Besides that, high breakdown voltage, VB of 2.45V is obtained which results in high reliability where the device become a promising candidates as a biosensor applications device. DC-VESIMOS demonstrated S value of 10.53mV/dec with supply voltage of VDS=1.75V in circuitry level. A considerable high breakdown voltage (VB=2.6V) and high ratio of ION/IOFF indicates low leakage currents and good reliability. The input of K parameter determines device behavior and the best value selected is when K=5 when compared with the published experimental works. Increase in body doping concentration will decrease the ON voltage of the device. In many aspects, DC-VESIMOS performance revealed that it was a best candidate to become one of the low power and high performance based biosensor applications device in the future.
{"title":"Enhancing equivalent circuit model of Dual Channel Vertical Strained Impact Ionization MOSFET (DC-VESIMOS) for biosensor applications","authors":"I. Saad, Hazwani Syazana B. Andee, Seng C. Bun, Zuhir H. Mohd, N. Bolong","doi":"10.1109/SMELEC.2016.7573599","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573599","url":null,"abstract":"Dual Channel Vertical Strained Impact Ionization MOSFET (DC-VESIMOS) device shows superb performance with lower subthreshold slope (S) value of 11.48mV/dec and high range of ON and OFF current of 1013 obtained which indicates fast switching behavior and low leakage current respectively by using Silvaco's TCAD. Besides that, high breakdown voltage, VB of 2.45V is obtained which results in high reliability where the device become a promising candidates as a biosensor applications device. DC-VESIMOS demonstrated S value of 10.53mV/dec with supply voltage of VDS=1.75V in circuitry level. A considerable high breakdown voltage (VB=2.6V) and high ratio of ION/IOFF indicates low leakage currents and good reliability. The input of K parameter determines device behavior and the best value selected is when K=5 when compared with the published experimental works. Increase in body doping concentration will decrease the ON voltage of the device. In many aspects, DC-VESIMOS performance revealed that it was a best candidate to become one of the low power and high performance based biosensor applications device in the future.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115679721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573586
Musab A. M. Al-Tarawni, A. Bakar, A. M. Md Zain
In this article, segmented slot waveguide structures are designed and analysed numerically. We present a theoretical investigation of overlap factors and low half voltage for different segmented slot waveguide structures to determine optimised geometrical dimensions based on slot widths. Results shows that high overlap factor, and low half voltage, occurs for 200 and 300 nm periodicities at a 100 nm slot width, while for a 400 nm periodicity this width is 125 nm. Thus, achieving a very low Vπ compared to conventional slot waveguides demonstrates a high sensitivity of segmented slot waveguide and unprecedented sensing in a sensor application.
{"title":"Design segmented slot waveguide for integrated waveguide modulator","authors":"Musab A. M. Al-Tarawni, A. Bakar, A. M. Md Zain","doi":"10.1109/SMELEC.2016.7573586","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573586","url":null,"abstract":"In this article, segmented slot waveguide structures are designed and analysed numerically. We present a theoretical investigation of overlap factors and low half voltage for different segmented slot waveguide structures to determine optimised geometrical dimensions based on slot widths. Results shows that high overlap factor, and low half voltage, occurs for 200 and 300 nm periodicities at a 100 nm slot width, while for a 400 nm periodicity this width is 125 nm. Thus, achieving a very low Vπ compared to conventional slot waveguides demonstrates a high sensitivity of segmented slot waveguide and unprecedented sensing in a sensor application.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122010240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573629
R. R. Elfa, M. K. Ahmad, N. Nafarizal, M. Z. Sahdan, C. Soon
The application of needle plasma jet using argon gas for surface modification is presented in this paper. The main objective is to modify the surface property of microscope slide glass from hydrophilic surface approximately to superhydrophilic surface. The power supply to the needle plasma jet was set to 400 kV and 1 kHz frequency with highly purity argon (Ar) gas as working gas to generate plasma condition. A copper wire was used as a powered electrode and needle. Water contact angle measurement was used to investigate the surface properties under the different period of treatment and storage time. As a result, we found that the sample of exposure for 300 seconds shows a great result in superhydrophilic surface until 6 hours of storage. This understanding is important in device fabrication application using the glass substrate.
{"title":"Hydrophilic property of glass treated by needle plasma jet for surface modification","authors":"R. R. Elfa, M. K. Ahmad, N. Nafarizal, M. Z. Sahdan, C. Soon","doi":"10.1109/SMELEC.2016.7573629","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573629","url":null,"abstract":"The application of needle plasma jet using argon gas for surface modification is presented in this paper. The main objective is to modify the surface property of microscope slide glass from hydrophilic surface approximately to superhydrophilic surface. The power supply to the needle plasma jet was set to 400 kV and 1 kHz frequency with highly purity argon (Ar) gas as working gas to generate plasma condition. A copper wire was used as a powered electrode and needle. Water contact angle measurement was used to investigate the surface properties under the different period of treatment and storage time. As a result, we found that the sample of exposure for 300 seconds shows a great result in superhydrophilic surface until 6 hours of storage. This understanding is important in device fabrication application using the glass substrate.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"176 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114079180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573573
A. Khelif
Phononic crystals (PnC) are periodic structures that have an ability to forbid the propagation of elastic waves in certain frequency. This region is known as Phononic Band Gap (PnBg) and can be used as guiding or filtering for elastic or acoustic wave. This ability has attracted many researchers around the world and many applications can be found from it such as in sensor, multiplexer, acoustic lens and acoustic cloaking. Furthermore, defects in the periodicity can be used to confine acoustic waves to follow complicated routes on a wavelength scale. In this presentation, we will show that mechanical micro- or nano resonators can made their way towards phononics where they lie at the heart of acoustic or elastic metamaterials. Particularly, phononic crystals based on resonant inclusions, could be used to strongly confine elastic waves and more specifically elastic waves propagating at the surface of a semi-infinite substrate exploiting the rich physics offered by the different coupling mechanisms in view of designing resonator systems capable to confine, control and transport the elastic energy at the micro and nano scale.
{"title":"Micro and nano-phononics","authors":"A. Khelif","doi":"10.1109/SMELEC.2016.7573573","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573573","url":null,"abstract":"Phononic crystals (PnC) are periodic structures that have an ability to forbid the propagation of elastic waves in certain frequency. This region is known as Phononic Band Gap (PnBg) and can be used as guiding or filtering for elastic or acoustic wave. This ability has attracted many researchers around the world and many applications can be found from it such as in sensor, multiplexer, acoustic lens and acoustic cloaking. Furthermore, defects in the periodicity can be used to confine acoustic waves to follow complicated routes on a wavelength scale. In this presentation, we will show that mechanical micro- or nano resonators can made their way towards phononics where they lie at the heart of acoustic or elastic metamaterials. Particularly, phononic crystals based on resonant inclusions, could be used to strongly confine elastic waves and more specifically elastic waves propagating at the surface of a semi-infinite substrate exploiting the rich physics offered by the different coupling mechanisms in view of designing resonator systems capable to confine, control and transport the elastic energy at the micro and nano scale.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134450992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573602
C. Ibau, M. K. Md Arshad, M. N. Md Nor, R. M. Ayub, R. A. Rahim, U. Hashim
The paper reports on numerical simulation of underlap field effect transistor (FET) device architecture on silicon-on-insulator (SOI) for a robustness used in biosensors application. By using the Silvaco ATLAS device simulator, the simulation is aimed at elucidating the effect of length of underlap, location of underlap, device etching profiles, and effect of back-gate biasing on the magnitude of drain current (ID). It is shown that the longer underlap and an etched silicon profile introduced higher parasitic resistance, thus decreasing the ID response. The ID response is higher for device with underlap between the gate-drain terminals as compared to gate-source terminals. Positive back-gate bias increases and shifts the current, and reduced the threshold voltage required to turn on the device.
{"title":"Numerical simulation of underlap FET device architecture for biosensor applications","authors":"C. Ibau, M. K. Md Arshad, M. N. Md Nor, R. M. Ayub, R. A. Rahim, U. Hashim","doi":"10.1109/SMELEC.2016.7573602","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573602","url":null,"abstract":"The paper reports on numerical simulation of underlap field effect transistor (FET) device architecture on silicon-on-insulator (SOI) for a robustness used in biosensors application. By using the Silvaco ATLAS device simulator, the simulation is aimed at elucidating the effect of length of underlap, location of underlap, device etching profiles, and effect of back-gate biasing on the magnitude of drain current (ID). It is shown that the longer underlap and an etched silicon profile introduced higher parasitic resistance, thus decreasing the ID response. The ID response is higher for device with underlap between the gate-drain terminals as compared to gate-source terminals. Positive back-gate bias increases and shifts the current, and reduced the threshold voltage required to turn on the device.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122906239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573610
Md. Naim Uddin, M. Islam, J. Sampe, Shafii A. Wahab, S. M. Md Ali
Ambient mechanical vibration energy can be converted into electrical energy using one of the most promising mechanism known as piezoelectric mechanism. In the mechanism, mechanical stress and strain generation in the piezoelectric materials can be converted into electrical energy which can be used for low power electronic devices. In this work, a T-shaped piezoelectric cantilever beam was analysed. The geometry of the cantilever beam was designed using SolidWorks. After that, the cantilever beam was simulated using Finite Element Method (FEM) in COMSOL Multiphysics. In the FEM simulation, the beam was kept under a vibration sources of 1g acceleration. As a result, maximum displacement at free end of the beam was found 2.47mm at resonant frequency of 238.75Hz. As piezoelectric energy harvesting from vibration depends on stress generation in piezoelectric materials, stress was analysed for the beam. The maximum amount of stress near the clamped end of the beam was found 2.39×108 N/m2 at resonance. The investigation showed that the designed and analysed T-shaped beam can be operated in low-frequency ambient vibration sources.
{"title":"Vibration based T-shaped piezoelectric cantilever beam design using finite element method for energy harvesting devices","authors":"Md. Naim Uddin, M. Islam, J. Sampe, Shafii A. Wahab, S. M. Md Ali","doi":"10.1109/SMELEC.2016.7573610","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573610","url":null,"abstract":"Ambient mechanical vibration energy can be converted into electrical energy using one of the most promising mechanism known as piezoelectric mechanism. In the mechanism, mechanical stress and strain generation in the piezoelectric materials can be converted into electrical energy which can be used for low power electronic devices. In this work, a T-shaped piezoelectric cantilever beam was analysed. The geometry of the cantilever beam was designed using SolidWorks. After that, the cantilever beam was simulated using Finite Element Method (FEM) in COMSOL Multiphysics. In the FEM simulation, the beam was kept under a vibration sources of 1g acceleration. As a result, maximum displacement at free end of the beam was found 2.47mm at resonant frequency of 238.75Hz. As piezoelectric energy harvesting from vibration depends on stress generation in piezoelectric materials, stress was analysed for the beam. The maximum amount of stress near the clamped end of the beam was found 2.39×108 N/m2 at resonance. The investigation showed that the designed and analysed T-shaped beam can be operated in low-frequency ambient vibration sources.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127694767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573583
M. A. Zulkefli, M. A. Mohamed, K. Siow, B. Majlis
The trend of miniaturization has led to the development of graphene nanoelectromechanical system (NEMS) switch due to high demand for low power consumption device applications. One of the important step before start the fabrication process is to model and simulate the graphene NEMS switch in order to get the optimum device dimension with low pull-in voltage applications. The present work represents simulations of suspended graphene length and air beam effects on the pull-in voltage for NEMS switch application. The analysis is done by 3D simulation using COMSOL Multiphysics software under electromechanics interface based on Finite Element Method (FEM). Comparable values with the conventional semiconductor switch of the pull-in voltage can be achieved at ratio below 10 to 0.5 value of the graphene beam length and air gap, respectively. This article is expected to estimate the operational parameter and dimension that can produce low pull-in voltage for a graphene NEMS switch operations.
{"title":"Optimization of beam length and air gap of suspended graphene NEMS switch for low pull-in voltage application","authors":"M. A. Zulkefli, M. A. Mohamed, K. Siow, B. Majlis","doi":"10.1109/SMELEC.2016.7573583","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573583","url":null,"abstract":"The trend of miniaturization has led to the development of graphene nanoelectromechanical system (NEMS) switch due to high demand for low power consumption device applications. One of the important step before start the fabrication process is to model and simulate the graphene NEMS switch in order to get the optimum device dimension with low pull-in voltage applications. The present work represents simulations of suspended graphene length and air beam effects on the pull-in voltage for NEMS switch application. The analysis is done by 3D simulation using COMSOL Multiphysics software under electromechanics interface based on Finite Element Method (FEM). Comparable values with the conventional semiconductor switch of the pull-in voltage can be achieved at ratio below 10 to 0.5 value of the graphene beam length and air gap, respectively. This article is expected to estimate the operational parameter and dimension that can produce low pull-in voltage for a graphene NEMS switch operations.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123477921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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