Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380641
A. Carnera, A. Gasparotto, M. Caldironi, S. Pellegrino, M. Tromby, F. Vidimari, C. Frigeri
The realization of a semi-insulating buried layer in a InP-based epitaxial structure is discussed by the selective ion implantation of Fe. Results indicate the feasibility of the production of a buried semi-insulating, current-blocking region with the selective implant of Fe into InP followed by an epitaxial overgrowth. The study of the involved physical processes revealed many interesting aspects. A strong difference is evidenced between the annealing behavior of samples implanted above or below the amorphization threshold. Particular attention has been devoted to the study of the solid phase epitaxial growth of the amorphous layer and of the Fe redistribution and segregation mechanisms.<>
{"title":"On the production of semi-insulating buried layers in epitaxially grown InP by Fe ion implantation","authors":"A. Carnera, A. Gasparotto, M. Caldironi, S. Pellegrino, M. Tromby, F. Vidimari, C. Frigeri","doi":"10.1109/ICIPRM.1993.380641","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380641","url":null,"abstract":"The realization of a semi-insulating buried layer in a InP-based epitaxial structure is discussed by the selective ion implantation of Fe. Results indicate the feasibility of the production of a buried semi-insulating, current-blocking region with the selective implant of Fe into InP followed by an epitaxial overgrowth. The study of the involved physical processes revealed many interesting aspects. A strong difference is evidenced between the annealing behavior of samples implanted above or below the amorphization threshold. Particular attention has been devoted to the study of the solid phase epitaxial growth of the amorphous layer and of the Fe redistribution and segregation mechanisms.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132761104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380670
I. Weinberg, C. K. Swartz, H. Curtis, D. Brinker, C. Vargas-Aburto
InP solar cells, epitaxially grown on GaAs substrates with intervening Ga/sub x/In/sub 1-x/As layers, were irradiated by protons over a range of energies from 10 to 0.5 MeV. Cell performance, temperature dependencies and carrier removal were determined over this energy range. The superior radiation resistance of these cells was due to an excessively small pre-irradiation diffusion length, attributable to a high dislocation density. This latter factor was also found to be dominant in the temperature dependency of open circuit voltage. Carrier removal was found to be inversely proportional to energy while radiation resistance decreased with decreasing proton energy, the proton range being the dominant factor in determining the behavior of these cell properties.<>
{"title":"Properties of heteroepitaxial InP solar cells at variable proton energies","authors":"I. Weinberg, C. K. Swartz, H. Curtis, D. Brinker, C. Vargas-Aburto","doi":"10.1109/ICIPRM.1993.380670","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380670","url":null,"abstract":"InP solar cells, epitaxially grown on GaAs substrates with intervening Ga/sub x/In/sub 1-x/As layers, were irradiated by protons over a range of energies from 10 to 0.5 MeV. Cell performance, temperature dependencies and carrier removal were determined over this energy range. The superior radiation resistance of these cells was due to an excessively small pre-irradiation diffusion length, attributable to a high dislocation density. This latter factor was also found to be dominant in the temperature dependency of open circuit voltage. Carrier removal was found to be inversely proportional to energy while radiation resistance decreased with decreasing proton energy, the proton range being the dominant factor in determining the behavior of these cell properties.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132210611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380612
B.A. Dedavid, R. Fornari, M. Moriglioni, J. Kumar, S. Anbukumar, M. Taddia, M. Battagliarin, E. Sentimenti
The authors report on the growth of low-dislocation density low-carrier concentration p-type InP via codoping with CdTe. Four crystals were grown by the liquid encapsulated Czochralski (LEC) technique. The results of electrical and analytical studies suggest that both cadmium and tellurium undergo some chemical reactions before pulling, so that only a minor fraction of the added impurities is available for doping. The effectiveness of this codoping in terms of dislocation density reduction has been confirmed by the structural investigations carried out on the four crystals with low free carrier concentrations. The role of multiple doping as a strategy for dislocation reduction is discussed.<>
{"title":"Double doping: A method to decrease dislocation densities in LEC InP crystals","authors":"B.A. Dedavid, R. Fornari, M. Moriglioni, J. Kumar, S. Anbukumar, M. Taddia, M. Battagliarin, E. Sentimenti","doi":"10.1109/ICIPRM.1993.380612","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380612","url":null,"abstract":"The authors report on the growth of low-dislocation density low-carrier concentration p-type InP via codoping with CdTe. Four crystals were grown by the liquid encapsulated Czochralski (LEC) technique. The results of electrical and analytical studies suggest that both cadmium and tellurium undergo some chemical reactions before pulling, so that only a minor fraction of the added impurities is available for doping. The effectiveness of this codoping in terms of dislocation density reduction has been confirmed by the structural investigations carried out on the four crystals with low free carrier concentrations. The role of multiple doping as a strategy for dislocation reduction is discussed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133116157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380705
G. Glastre, D. Rondi, S. Leger, A. Enard, E. Lallier, R. Blondeau, M. Papuchon
The fabrication and characteristics of the monolithic integration of a GaInAsP-InP 2 /spl times/ 2 switch with optical amplifiers are reported. The switch device is a current injection tuned directional coupler, which can be designed for wavelength and polarization independence. This component exhibits a 0 dB fiber to fiber insertion loss at 1.5 /spl mu/m with 17 dB extinction ratio and less than 6 mA driving current to switch from bar to cross state.<>
{"title":"Monolithic integration of 2 /spl times/ 2 switch and optical amplifiers with 0 dB fibre to fibre insertion loss grown by LP-MOCVD","authors":"G. Glastre, D. Rondi, S. Leger, A. Enard, E. Lallier, R. Blondeau, M. Papuchon","doi":"10.1109/ICIPRM.1993.380705","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380705","url":null,"abstract":"The fabrication and characteristics of the monolithic integration of a GaInAsP-InP 2 /spl times/ 2 switch with optical amplifiers are reported. The switch device is a current injection tuned directional coupler, which can be designed for wavelength and polarization independence. This component exhibits a 0 dB fiber to fiber insertion loss at 1.5 /spl mu/m with 17 dB extinction ratio and less than 6 mA driving current to switch from bar to cross state.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114409702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380617
F. Hieronymi, E. H. Bottcher, E. Droge, D. Kuhl, D. Bimberg
The authors report on high-performance InGaAs metal-semiconductor-metal (MSM) photodetectors for large area applications. Fe-doping was employed to obtain the high-resistivity InGaAs:Fe photoactive layer and the InP:Fe Schottky-barrier enhancement layer. The fabricated interdigitated MSM detectors have an active area of 350 /spl mu/m /spl times/ 350 /spl mu/m. At typical operating bias of 10 V, a capacitance of 1.6 pF and almost 1 GHz electrical bandwidth was achieved. The devices are very attractive for large area photoreceivers since they consume high-sensitivity and large-bandwidth operation due to low capacitive loading.<>
作者报道了用于大面积应用的高性能InGaAs金属-半导体-金属(MSM)光电探测器。采用Fe掺杂获得了高电阻率InGaAs:Fe光活性层和InP:Fe肖特基势垒增强层。所制备的交叉数字MSM探测器的有效面积为350 /spl μ m /spl倍/ 350 /spl μ m /m。在典型的工作偏置为10 V时，实现了1.6 pF的电容和近1 GHz的电带宽。由于低容性负载，该器件消耗高灵敏度和大带宽操作，因此对于大面积光电接收器非常有吸引力。
{"title":"Large area InGaAs MSM photodetectors","authors":"F. Hieronymi, E. H. Bottcher, E. Droge, D. Kuhl, D. Bimberg","doi":"10.1109/ICIPRM.1993.380617","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380617","url":null,"abstract":"The authors report on high-performance InGaAs metal-semiconductor-metal (MSM) photodetectors for large area applications. Fe-doping was employed to obtain the high-resistivity InGaAs:Fe photoactive layer and the InP:Fe Schottky-barrier enhancement layer. The fabricated interdigitated MSM detectors have an active area of 350 /spl mu/m /spl times/ 350 /spl mu/m. At typical operating bias of 10 V, a capacitance of 1.6 pF and almost 1 GHz electrical bandwidth was achieved. The devices are very attractive for large area photoreceivers since they consume high-sensitivity and large-bandwidth operation due to low capacitive loading.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116490351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380677
V. Harle, H. Bolay, J. Hugo, F. Scholz, B. Meyer, M. Drechsler, C. Wetzel, B. Kowalski, P. Omling
Using magnetic and magneto-optical methods, the authors were able to determine various material parameters of the strained system GaInAs in InP. To investigate some of these parameters, they have grown various modulation doped single quantum wells. The quantum well composition of Ga/sub x/In/sub 1-x/As was varied from x = 0.4 to 0.55 and the well width from 1 to 15 nm. The effective in-plane electron masses were measured for the various compositions using cyclotron resonance and temperature dependent Shubnikov-de Haas measurements (SdH). The dependency of the carrier mobility of n- and p-modulation doped samples on the well width and the composition were investigated by the use of SdH and Hall measurements at 4 K and 77 K. Optical detected magnetic resonance investigations were carried out to determine the hole/electron g-factors.<>
{"title":"Magneto-transport properties of strained GaInAs/InP single quantum wells","authors":"V. Harle, H. Bolay, J. Hugo, F. Scholz, B. Meyer, M. Drechsler, C. Wetzel, B. Kowalski, P. Omling","doi":"10.1109/ICIPRM.1993.380677","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380677","url":null,"abstract":"Using magnetic and magneto-optical methods, the authors were able to determine various material parameters of the strained system GaInAs in InP. To investigate some of these parameters, they have grown various modulation doped single quantum wells. The quantum well composition of Ga/sub x/In/sub 1-x/As was varied from x = 0.4 to 0.55 and the well width from 1 to 15 nm. The effective in-plane electron masses were measured for the various compositions using cyclotron resonance and temperature dependent Shubnikov-de Haas measurements (SdH). The dependency of the carrier mobility of n- and p-modulation doped samples on the well width and the composition were investigated by the use of SdH and Hall measurements at 4 K and 77 K. Optical detected magnetic resonance investigations were carried out to determine the hole/electron g-factors.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114656418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380667
K. Mori, M. Takemi, T. Takiguchi, K. Goto, T. Nishimura, T. Kimura, Y. Mihashi, T. Murotani
The authors demonstrated a successful multi-wafer growth for the 1.3 /spl mu/m InGaAsP strained multiple quantum well (MQW) lasers. Excellent uniformity of composition and thickness was realized by optimizing the growth conditions. The standard deviation of photoluminescence (PL) wavelength of InGaAsP layer over a 2 inch wafer is 4 nm, which is the lowest value for the multi-wafer growth. For a strained MQW structure, the standard deviation in PL wavelength of 7nm has been obtained. Buried-heterostructure lasers have been fabricated using the multi-wafer metal-organic chemical vapor deposition growth. The lasers exhibit very low threshold current over wide temperature range and low operating current of 26 mA was obtained even at 80/spl deg/C with 5 mW continuous wave (CW) output.<>
{"title":"Multi-wafer MOCVD growth of highly uniform InGaAsP strained quantum well structure for low threshold 1.3 /spl mu/m lasers","authors":"K. Mori, M. Takemi, T. Takiguchi, K. Goto, T. Nishimura, T. Kimura, Y. Mihashi, T. Murotani","doi":"10.1109/ICIPRM.1993.380667","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380667","url":null,"abstract":"The authors demonstrated a successful multi-wafer growth for the 1.3 /spl mu/m InGaAsP strained multiple quantum well (MQW) lasers. Excellent uniformity of composition and thickness was realized by optimizing the growth conditions. The standard deviation of photoluminescence (PL) wavelength of InGaAsP layer over a 2 inch wafer is 4 nm, which is the lowest value for the multi-wafer growth. For a strained MQW structure, the standard deviation in PL wavelength of 7nm has been obtained. Buried-heterostructure lasers have been fabricated using the multi-wafer metal-organic chemical vapor deposition growth. The lasers exhibit very low threshold current over wide temperature range and low operating current of 26 mA was obtained even at 80/spl deg/C with 5 mW continuous wave (CW) output.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128218580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380710
G. Muller, D. Hofmann, N. Schafer
The current status of LEC (liquid encapsulated Czochralski)-type growth processes and vertical gradient freeze (VGF)-growth of InP substrate crystals is reviewed. The twinning problem presently limiting the VGF potential is discussed and strategies to overcome this defect are considered. A new type of VGF multizone furnace is introduced. VGF processing under defined thermal and constitutional boundary conditions in this apparatus based on a recently developed global numerical model offers new perspectives for the growth of low-defect InP single crystals.<>
{"title":"Perspectives of the VGF growth process for the preparation of low-defect InP substrate crystals","authors":"G. Muller, D. Hofmann, N. Schafer","doi":"10.1109/ICIPRM.1993.380710","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380710","url":null,"abstract":"The current status of LEC (liquid encapsulated Czochralski)-type growth processes and vertical gradient freeze (VGF)-growth of InP substrate crystals is reviewed. The twinning problem presently limiting the VGF potential is discussed and strategies to overcome this defect are considered. A new type of VGF multizone furnace is introduced. VGF processing under defined thermal and constitutional boundary conditions in this apparatus based on a recently developed global numerical model offers new perspectives for the growth of low-defect InP single crystals.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"12 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133287514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380604
N. Yokouchi, T. Uchida, T. Miyamoto, Y. Inaba, K. Mori, F. Koyama, K. Iga
The authors investigated some fundamental characteristics of chemical beam epitaxy (CBE) grown GaInAsP/InP multiple quantum wells (MQWs) for a wavelength tuner and estimated the wavelength shift for realizing wavelength tunable surface emitting (SE) lasers. They observed the quantum confined Stark effect in a GaInAsP/InP MQW structure grown by CBE and estimated the refractive index change, which was as large as 1%. By using these results, the possibility realizing a wavelength tunable SE laser with a MQW tuner is exhibited and the maximum wavelength change is expected to be as large as 7/spl Aring/.<>
{"title":"Loss and index change in GaInAsP/InP multiple quantum well QCSE tuning element for surface emitting lasers","authors":"N. Yokouchi, T. Uchida, T. Miyamoto, Y. Inaba, K. Mori, F. Koyama, K. Iga","doi":"10.1109/ICIPRM.1993.380604","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380604","url":null,"abstract":"The authors investigated some fundamental characteristics of chemical beam epitaxy (CBE) grown GaInAsP/InP multiple quantum wells (MQWs) for a wavelength tuner and estimated the wavelength shift for realizing wavelength tunable surface emitting (SE) lasers. They observed the quantum confined Stark effect in a GaInAsP/InP MQW structure grown by CBE and estimated the refractive index change, which was as large as 1%. By using these results, the possibility realizing a wavelength tunable SE laser with a MQW tuner is exhibited and the maximum wavelength change is expected to be as large as 7/spl Aring/.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134285965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380588
I. Mouatakif, J.C. DeJaeger, M. Lefebvre, G. Salmer, G. Post
A theoretical and experimental investigation of the InP metal-insulated semiconductor FET (MISFET) is presented. It is based on a 2-D hydrodynamic model in order to study the physical behavior of the device making it possible to simulate depletion and enhancement operating modes. A complete microwave characterization has been done to validate the theoretical results and show the technological difficulties for making such devices. Power measurements are also presented using an active load pull power bench.<>
{"title":"Physical modeling and experimental study of the InP MISFET for power applications","authors":"I. Mouatakif, J.C. DeJaeger, M. Lefebvre, G. Salmer, G. Post","doi":"10.1109/ICIPRM.1993.380588","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380588","url":null,"abstract":"A theoretical and experimental investigation of the InP metal-insulated semiconductor FET (MISFET) is presented. It is based on a 2-D hydrodynamic model in order to study the physical behavior of the device making it possible to simulate depletion and enhancement operating modes. A complete microwave characterization has been done to validate the theoretical results and show the technological difficulties for making such devices. Power measurements are also presented using an active load pull power bench.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132399676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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