Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380714
T. Sasaki, M. Kitamura, I. Mito
Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP structures on mask-patterned planar InP substrates was studied. Ridge structures with widths around 2 /spl mu/m were selectively formed on open stripe regions between pairs of mask stripes. For such narrow regions, not only lateral gas phase diffusion but also surface migration contribute to enhanced growth rate compared to growth on unmasked wafers. The surface migration processes of metalorganic species were investigated to obtain flat top surfaces in the ridge structures. Selectively grown InGaAs/InGaAsP MQW structures with flat interfaces were obtained. Composition shifts in selectively grown InGaAs layers provided an additional bandgap energy shift in thickness-modulated InGaAs quantum wells. A shift as large as 200 nm in the photoluminescence peak wavelength was obtained for simultaneously grown multiple quantum well ridge structures while maintaining flat interfaces.<>
{"title":"Selective MOVPE growth and its applications to optical devices","authors":"T. Sasaki, M. Kitamura, I. Mito","doi":"10.1109/ICIPRM.1993.380714","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380714","url":null,"abstract":"Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP structures on mask-patterned planar InP substrates was studied. Ridge structures with widths around 2 /spl mu/m were selectively formed on open stripe regions between pairs of mask stripes. For such narrow regions, not only lateral gas phase diffusion but also surface migration contribute to enhanced growth rate compared to growth on unmasked wafers. The surface migration processes of metalorganic species were investigated to obtain flat top surfaces in the ridge structures. Selectively grown InGaAs/InGaAsP MQW structures with flat interfaces were obtained. Composition shifts in selectively grown InGaAs layers provided an additional bandgap energy shift in thickness-modulated InGaAs quantum wells. A shift as large as 200 nm in the photoluminescence peak wavelength was obtained for simultaneously grown multiple quantum well ridge structures while maintaining flat interfaces.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133492903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380568
S. Ojha, S. Clements
The requirements for etching low loss mirrors and the dry etching techniques used for realizing these mirrors in photonic devices are reviewed. The effect of carbon dioxide and nitrous oxide additions to CH/sub 4//H/sub 2/ on the etch characteristics of double heterostructure layers is discussed. Vertical mirror profiles were obtained by using a CO/sub 2/ based etch process. Parabolic mirror elements having 1.2 dB loss were etched in an integrated InGaAsP/InP demultiplexer by using a CH/sub 4//H/sub 2//CO/sub 2/ reactive ion etching process. Loading effects were found to be dominant in methane/hydrogen based processes and were found to affect verticality of the quaternary layers.<>
{"title":"Etching of low loss mirrors for photonic ICs","authors":"S. Ojha, S. Clements","doi":"10.1109/ICIPRM.1993.380568","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380568","url":null,"abstract":"The requirements for etching low loss mirrors and the dry etching techniques used for realizing these mirrors in photonic devices are reviewed. The effect of carbon dioxide and nitrous oxide additions to CH/sub 4//H/sub 2/ on the etch characteristics of double heterostructure layers is discussed. Vertical mirror profiles were obtained by using a CO/sub 2/ based etch process. Parabolic mirror elements having 1.2 dB loss were etched in an integrated InGaAsP/InP demultiplexer by using a CH/sub 4//H/sub 2//CO/sub 2/ reactive ion etching process. Loading effects were found to be dominant in methane/hydrogen based processes and were found to affect verticality of the quaternary layers.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132344861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380718
R. Glew
The author studied the interdiffusion between the InGaAs wells and InGaAs barriers as a function of phosphine and arsine pressure. The effect of strain and substrate etch pit density was explored. The interdiffusion rates for unstrained and strained quantum wells were similar, whether grown on low or high etch pit density substrates. The interdiffusion mechanism has been shown to be not due to the group V vacancies.<>
{"title":"Interdiffusion of InGaAs/InGaAsP quantum wells","authors":"R. Glew","doi":"10.1109/ICIPRM.1993.380718","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380718","url":null,"abstract":"The author studied the interdiffusion between the InGaAs wells and InGaAs barriers as a function of phosphine and arsine pressure. The effect of strain and substrate etch pit density was explored. The interdiffusion rates for unstrained and strained quantum wells were similar, whether grown on low or high etch pit density substrates. The interdiffusion mechanism has been shown to be not due to the group V vacancies.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"217 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113999973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380701
P. Hofstra, D. A. Thompson, B. Robinson, G. Hollinger, R. Streater
To minimize defects at re-grown interfaces, in InP grown by gas source molecular beam epitaxy, surface passivation techniques were combined with an in-situ cleaning using a H-plasma. Surfaces were passivated by either a UV-ozone treatment or a monolayer of sulfur. Re-grown interfaces in Si-doped InP that had been UV-ozone and plasma cleaned contained virtually no electrically active defects (<5 /spl times/ 10/sup 10/ cm/sup -2/). Re-grown interfaces in Be-doped material that had been given the same treatment contained a defect concentration of 8 /spl times/ 10/sup 11/ cm/sup -2/. Secondary ion mass spectroscopy results material that was sulfur passivated and plasma cleaned contained an interfacial defect concentration of 8 /spl times/ 10/sup 11/ cm/sup -2/.<>
{"title":"Application of surface passivation techniques and an in-situ hydrogen plasma for regrowth of InP by GSMBE","authors":"P. Hofstra, D. A. Thompson, B. Robinson, G. Hollinger, R. Streater","doi":"10.1109/ICIPRM.1993.380701","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380701","url":null,"abstract":"To minimize defects at re-grown interfaces, in InP grown by gas source molecular beam epitaxy, surface passivation techniques were combined with an in-situ cleaning using a H-plasma. Surfaces were passivated by either a UV-ozone treatment or a monolayer of sulfur. Re-grown interfaces in Si-doped InP that had been UV-ozone and plasma cleaned contained virtually no electrically active defects (<5 /spl times/ 10/sup 10/ cm/sup -2/). Re-grown interfaces in Be-doped material that had been given the same treatment contained a defect concentration of 8 /spl times/ 10/sup 11/ cm/sup -2/. Secondary ion mass spectroscopy results material that was sulfur passivated and plasma cleaned contained an interfacial defect concentration of 8 /spl times/ 10/sup 11/ cm/sup -2/.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121183482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380611
R. Hirano, T. Kanazawa, Y. Itoh, T. Itokawa, H. Onodera, M. Nakamura
The authors have developed a modified liquid encapsulated Czochralski method with a double thermal baffle, by which low etch pitch density (EPD) S-doped InP crystals with lower carrier concentration can be grown. The low EPD S-doped InP crystals became rectangular in shape. When the faceted surfaces were clearly seen on the body, the dislocation density decreased drastically. The solid-liquid interface shape of the crystal investigated by A-B etching, scanning photoluminescence and infrared macrograph was flatter than that of the conventional crystals. The facet growth of the {111} planes was observed on the body of the newly developed crystal.<>
{"title":"Crystal growth of low EPD S-doped <100> InP by facet formation","authors":"R. Hirano, T. Kanazawa, Y. Itoh, T. Itokawa, H. Onodera, M. Nakamura","doi":"10.1109/ICIPRM.1993.380611","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380611","url":null,"abstract":"The authors have developed a modified liquid encapsulated Czochralski method with a double thermal baffle, by which low etch pitch density (EPD) S-doped InP crystals with lower carrier concentration can be grown. The low EPD S-doped InP crystals became rectangular in shape. When the faceted surfaces were clearly seen on the body, the dislocation density decreased drastically. The solid-liquid interface shape of the crystal investigated by A-B etching, scanning photoluminescence and infrared macrograph was flatter than that of the conventional crystals. The facet growth of the {111} planes was observed on the body of the newly developed crystal.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128706034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380644
G. Wittmann, R. Fasbender, M. Thoms, A. Winnacker
Charge transfer phenomena are studied in semi-insulating InP:Fe. It is shown that the Fe-absorption is changed under exposure to near IR-light due to pumping of charge carriers into traps other than Fe. This process may affect the determination of the Fe-distribution in InP:Fe by optical absorption. From the change in Fe-absorption the absolute concentration of traps can be estimated. The spectral dependence of the charge transfer process reveals that mainly electron traps are active above 80K.<>
{"title":"Charge transfer phenomena in semi-insulating InP:Fe","authors":"G. Wittmann, R. Fasbender, M. Thoms, A. Winnacker","doi":"10.1109/ICIPRM.1993.380644","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380644","url":null,"abstract":"Charge transfer phenomena are studied in semi-insulating InP:Fe. It is shown that the Fe-absorption is changed under exposure to near IR-light due to pumping of charge carriers into traps other than Fe. This process may affect the determination of the Fe-distribution in InP:Fe by optical absorption. From the change in Fe-absorption the absolute concentration of traps can be estimated. The spectral dependence of the charge transfer process reveals that mainly electron traps are active above 80K.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128733199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380675
C. Ferrari, L. Lazzarini, G. Salviati, L. Gastaldi, F. Taiarol, G. Schiavini, C. Rigo
The problem of interface sharpness, both for composition and planarity, is important in InGaAs(P)/InP multiple quantum wells (MQWs) based optoelectronic devices. Composition variations arise due to the need to protect the interfaces from thermal degradation with a group V atom flux during growth interruptions and their effect depends on the growth technique. To understand the influence of such compositional variations on both InP/InGaAs and InGaAs/InP interfaces separately, false MQWs (FMQWs) were intentionally grown. The FMQWs result from the incorporation of protecting group V species different to that present in the growing layer during the periods of growth interruptions. The effects of different atoms of group V (As,P) on interface roughness and compositional changes in InP(As)/InP and InGaAs(P)/InGaAs FMQWs grown at different growth temperatures and with different growth interruption times by chemical beam epitaxy and metal organic chemical vapor deposition have been studied. This work has been performed by combining high resolution transmission electron microscopy and high resolution X-ray diffraction techniques.<>
{"title":"High resolution X-ray diffraction and transmission electron microscopy investigation on As and P incorporation in MOCVD and CBE grown In(GaAs)P/InP 'false' multi quantum wells","authors":"C. Ferrari, L. Lazzarini, G. Salviati, L. Gastaldi, F. Taiarol, G. Schiavini, C. Rigo","doi":"10.1109/ICIPRM.1993.380675","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380675","url":null,"abstract":"The problem of interface sharpness, both for composition and planarity, is important in InGaAs(P)/InP multiple quantum wells (MQWs) based optoelectronic devices. Composition variations arise due to the need to protect the interfaces from thermal degradation with a group V atom flux during growth interruptions and their effect depends on the growth technique. To understand the influence of such compositional variations on both InP/InGaAs and InGaAs/InP interfaces separately, false MQWs (FMQWs) were intentionally grown. The FMQWs result from the incorporation of protecting group V species different to that present in the growing layer during the periods of growth interruptions. The effects of different atoms of group V (As,P) on interface roughness and compositional changes in InP(As)/InP and InGaAs(P)/InGaAs FMQWs grown at different growth temperatures and with different growth interruption times by chemical beam epitaxy and metal organic chemical vapor deposition have been studied. This work has been performed by combining high resolution transmission electron microscopy and high resolution X-ray diffraction techniques.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116910292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380688
S. Salaun, A. Le Corre, M. Gauneau, D. Lecrosnier
The authors studied the quality of gas source molecular beam epitaxy (GSMBE) InP:Fe epitaxial layers as a function of growth conditions using secondary ion mass spectroscopy and resistivity measurements. Varying the growth temperature and the phosphine (PH/sub 3/) flow rate allows control of the atom surface mobility during growth, hence permitting decrease of the interactions between iron atoms, to improve their incorporation in the InP layers. For optimized growth conditions, a semi-insulating behavior of GSMBE InP:Fe epitaxial layers is demonstrated with resistivities in excess of 10/sup 8/ /spl Omega/.cm for an iron concentration above 10/sup 17/ cm/sup -3/.<>
{"title":"Semi-insulating InP:Fe by GSMBE: Optimal growth conditions","authors":"S. Salaun, A. Le Corre, M. Gauneau, D. Lecrosnier","doi":"10.1109/ICIPRM.1993.380688","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380688","url":null,"abstract":"The authors studied the quality of gas source molecular beam epitaxy (GSMBE) InP:Fe epitaxial layers as a function of growth conditions using secondary ion mass spectroscopy and resistivity measurements. Varying the growth temperature and the phosphine (PH/sub 3/) flow rate allows control of the atom surface mobility during growth, hence permitting decrease of the interactions between iron atoms, to improve their incorporation in the InP layers. For optimized growth conditions, a semi-insulating behavior of GSMBE InP:Fe epitaxial layers is demonstrated with resistivities in excess of 10/sup 8/ /spl Omega/.cm for an iron concentration above 10/sup 17/ cm/sup -3/.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117083376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380719
H. Chau, D. Pavlidis, G. Ng, K. Tomizawa, D. M. Baker, C. Meaton, J. N. Tothill
A novel p/sup -/-n/sup -/ collector design is presented for InP/InGaAs heterostructure bipolar transistors (HBTs). It shows a speed advantage over conventional n/sup -/ collector designs without at the same time being handicapped in terms of breakdown voltage as would normally be the case of traditional special collector designs. The speed and breakdown-speed tradeoff superiority of the p/sup -/-n/sup -/ HBT over the conventional designs are shown and discussed theoretically and experimentally.<>
{"title":"Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p/sup -/-n/sup -/ collector structure","authors":"H. Chau, D. Pavlidis, G. Ng, K. Tomizawa, D. M. Baker, C. Meaton, J. N. Tothill","doi":"10.1109/ICIPRM.1993.380719","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380719","url":null,"abstract":"A novel p/sup -/-n/sup -/ collector design is presented for InP/InGaAs heterostructure bipolar transistors (HBTs). It shows a speed advantage over conventional n/sup -/ collector designs without at the same time being handicapped in terms of breakdown voltage as would normally be the case of traditional special collector designs. The speed and breakdown-speed tradeoff superiority of the p/sup -/-n/sup -/ HBT over the conventional designs are shown and discussed theoretically and experimentally.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114338607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380595
Q. Liu, D. Pulfrey
The authors present calculations of the equivalent input noise current spectral density in both tuned and untuned front-ends employing InP/InGaAs heterostructure bipolar transistors (HBTs) and identify the dominant transistor-related components of the noise. The receiver sensitivity will depend ultimately on the front-end noise. Results are presented for receivers based on InP/InGaAs HBTs as used in either 1 GB/s or 10 GB/s demonstration units. The small-signal parameters for these transistors are shown.<>
{"title":"Noise in integrated optical receiver front-ends employing InP/InGaAs HBTs","authors":"Q. Liu, D. Pulfrey","doi":"10.1109/ICIPRM.1993.380595","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380595","url":null,"abstract":"The authors present calculations of the equivalent input noise current spectral density in both tuned and untuned front-ends employing InP/InGaAs heterostructure bipolar transistors (HBTs) and identify the dominant transistor-related components of the noise. The receiver sensitivity will depend ultimately on the front-end noise. Results are presented for receivers based on InP/InGaAs HBTs as used in either 1 GB/s or 10 GB/s demonstration units. The small-signal parameters for these transistors are shown.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115328213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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