Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380545
J. Harmand, M. Juhel
The contamination by oxygen in the molecular beam epitaxy of InGaAs was studied. The oxygen concentrations were measured by secondary ion mass spectroscopy in samples grown with interruptions. Quantitative estimations of O bulk concentrations were deduced with a very low detection limit. Correlations with growth conditions and electrical properties were observed.<>
{"title":"A quantitative study of oxygen contamination in InGaAs grown by MBE","authors":"J. Harmand, M. Juhel","doi":"10.1109/ICIPRM.1993.380545","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380545","url":null,"abstract":"The contamination by oxygen in the molecular beam epitaxy of InGaAs was studied. The oxygen concentrations were measured by secondary ion mass spectroscopy in samples grown with interruptions. Quantitative estimations of O bulk concentrations were deduced with a very low detection limit. Correlations with growth conditions and electrical properties were observed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126080011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380721
W. Stanchina, T. Liu, D. Rensch, P. Macdonald, M. Hafizi, W. Hooper, M. Lui, Y. K. Allen, T. V. Kargodorian, R. Wong-Quen, F. Williams
The authors report the experimental characteristics obtained from AlInAs/GaInAs/InP double heterojunction bipolar transistors (DHBTs) grown by gas source molecular beam epitaxy. They describe the fabrication and measured performance of two AlInAs/GaInAs/InP DHBT structures, one having a relatively thin 390 nm collector and the other having a relatively thick 1200 nm collector. Their performance results are presented within the context of their application to linear ICs and microwave power amplification. The results include the first reported microwave power measurements on this InP-based DHBT structure featuring a continuous wave output power density of 3.3 W/mm at 4 GHz.<>
{"title":"Performance of AlInAs/GaInAs/InP microwave DHBTs","authors":"W. Stanchina, T. Liu, D. Rensch, P. Macdonald, M. Hafizi, W. Hooper, M. Lui, Y. K. Allen, T. V. Kargodorian, R. Wong-Quen, F. Williams","doi":"10.1109/ICIPRM.1993.380721","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380721","url":null,"abstract":"The authors report the experimental characteristics obtained from AlInAs/GaInAs/InP double heterojunction bipolar transistors (DHBTs) grown by gas source molecular beam epitaxy. They describe the fabrication and measured performance of two AlInAs/GaInAs/InP DHBT structures, one having a relatively thin 390 nm collector and the other having a relatively thick 1200 nm collector. Their performance results are presented within the context of their application to linear ICs and microwave power amplification. The results include the first reported microwave power measurements on this InP-based DHBT structure featuring a continuous wave output power density of 3.3 W/mm at 4 GHz.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126234472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380660
J. Carlin, A. Rudra, M. Ilegems
The authors describe quantitatively the incorporation of group III elements during the chemical beam epitaxy (CBE) growth of GaInAsP alloys. They report key parameters that influence CBE growth of GaInAsP alloys when TEGa, TMIn, AsH/sub 3/ and PH/sub 3/ sources are used in the 480/spl deg/C-520/spl deg/C substrate temperature range. The indium incorporation ratio is quasi-insensitive to the growth conditions. In contrast, two main factors must be taken into account for the gallium incorporation. The factors are (1) a strong inhibition due to the presence of indium. This mechanism is not very dependent on the substrate temperature. (2) A strong temperature dependence when phosphorus is present. A set of linear relations to describe these effects is proposed.<>
{"title":"Incorporation of group III elements in chemical beam epitaxy of GaInAsP alloys","authors":"J. Carlin, A. Rudra, M. Ilegems","doi":"10.1109/ICIPRM.1993.380660","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380660","url":null,"abstract":"The authors describe quantitatively the incorporation of group III elements during the chemical beam epitaxy (CBE) growth of GaInAsP alloys. They report key parameters that influence CBE growth of GaInAsP alloys when TEGa, TMIn, AsH/sub 3/ and PH/sub 3/ sources are used in the 480/spl deg/C-520/spl deg/C substrate temperature range. The indium incorporation ratio is quasi-insensitive to the growth conditions. In contrast, two main factors must be taken into account for the gallium incorporation. The factors are (1) a strong inhibition due to the presence of indium. This mechanism is not very dependent on the substrate temperature. (2) A strong temperature dependence when phosphorus is present. A set of linear relations to describe these effects is proposed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127268970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380563
P. Wiedemann, M. Klenk, G. Laube, R. Weinmann, E. Zielinski
The authors present basic studies about the properties of compressively strained multi-quantum well (MQW) structures and their optimization for laser applications. Epitaxial growth of strained InGaAsP/InGaAsP MQW structures was performed in standard low pressure metal organic vapor phase epitaxial equipment. High resolution diffractometry measurements showed excellent agreement with simulations. Secondary ion mass spectrometry measurements showed good well to well homogeneity. By optimizing growth pauses and strain a best threshold current density was achieved.<>
{"title":"MOVPE of strained InGaAsP/InGaAsP MQW structures for laser applications","authors":"P. Wiedemann, M. Klenk, G. Laube, R. Weinmann, E. Zielinski","doi":"10.1109/ICIPRM.1993.380563","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380563","url":null,"abstract":"The authors present basic studies about the properties of compressively strained multi-quantum well (MQW) structures and their optimization for laser applications. Epitaxial growth of strained InGaAsP/InGaAsP MQW structures was performed in standard low pressure metal organic vapor phase epitaxial equipment. High resolution diffractometry measurements showed excellent agreement with simulations. Secondary ion mass spectrometry measurements showed good well to well homogeneity. By optimizing growth pauses and strain a best threshold current density was achieved.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127521256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380643
A. Kadoun, G. Brémond, D. Barbier, A. Laugier, J. Tardy, M. Gendry
InP is a promising substrate material for many microelectronic device applications. However, a crucial step in the process of fabrication of these devices is the post implantation annealing. Owing to phosphorous volatility, the InP surface is very sensitive to heat treatment, especially when high temperatures are required. An annealing procedure has been previously used in the process of fabrication of an InP MISFET which showed excellent static performance. This method consists of growth of a one micron thick lattice matched InGaAs layer by molecular beam epitaxy (MBE). This layer acts at the same time as an implantation mask and a protecting cap for the channel area during the high temperature post implantation annealing. Capacitance-voltage measurements and deep level transient spectroscopy analysis have been implemented for the purpose of investigating the effects of thermal treatments on the properties of the channel area underneath the InGaAs capping layer for this new method of encapsulation of InP. Thermal treatments involved in this particular technology are post implantation rapid thermal annealing, and the high temperature stage during the epitaxial growth.<>
{"title":"Effect of rapid thermal annealing on electrical properties of capped InP for MISFET device application","authors":"A. Kadoun, G. Brémond, D. Barbier, A. Laugier, J. Tardy, M. Gendry","doi":"10.1109/ICIPRM.1993.380643","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380643","url":null,"abstract":"InP is a promising substrate material for many microelectronic device applications. However, a crucial step in the process of fabrication of these devices is the post implantation annealing. Owing to phosphorous volatility, the InP surface is very sensitive to heat treatment, especially when high temperatures are required. An annealing procedure has been previously used in the process of fabrication of an InP MISFET which showed excellent static performance. This method consists of growth of a one micron thick lattice matched InGaAs layer by molecular beam epitaxy (MBE). This layer acts at the same time as an implantation mask and a protecting cap for the channel area during the high temperature post implantation annealing. Capacitance-voltage measurements and deep level transient spectroscopy analysis have been implemented for the purpose of investigating the effects of thermal treatments on the properties of the channel area underneath the InGaAs capping layer for this new method of encapsulation of InP. Thermal treatments involved in this particular technology are post implantation rapid thermal annealing, and the high temperature stage during the epitaxial growth.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"334 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122748206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380649
K. Nakajima, T. Kusunoki, K. Kitahara, H. Ishikawa
The authors have developed a double crucible liquid encapsulated Czochralski (LEC) method with a continuous supply of solute elements. The controllability of the supply of solute elements can be improved by this method. A 5 cm long InGaAs ternary bulk crystal has been grown at a constant temperature by the LEC method with a supply of only GaAs to growth melt. The X-ray, electrical and optical results imply that the quality of the InGaAs bulk crystals is as high as the LEC grown GaAs crystals on the market.<>
{"title":"Growth and properties of InGaAs ternary bulk crystals","authors":"K. Nakajima, T. Kusunoki, K. Kitahara, H. Ishikawa","doi":"10.1109/ICIPRM.1993.380649","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380649","url":null,"abstract":"The authors have developed a double crucible liquid encapsulated Czochralski (LEC) method with a continuous supply of solute elements. The controllability of the supply of solute elements can be improved by this method. A 5 cm long InGaAs ternary bulk crystal has been grown at a constant temperature by the LEC method with a supply of only GaAs to growth melt. The X-ray, electrical and optical results imply that the quality of the InGaAs bulk crystals is as high as the LEC grown GaAs crystals on the market.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124776738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380573
G. Ng, Y. Chan, D. Pavlidis, Y. Kwon, T. Brock, J. Kuo
A new pseudomorphic AlInP/InGaAs high electron mobility transistor (HEMT) grown by gas-source molecular-beam epitaxy has been demonstrated. This new pseudomorphic HEMT design offers: (i) a larger /spl Delta/E/sub c/ than pseudomorphic Al/sub 0.22/Ga/sub 0.78/As/I with the same channel composition and thus better confinement, (ii) reduction of DX-center related problems (J. M. Kuo et al., 1993), and (iii) high etching selectivity between GaAs/InGaAs and AlInP and thus improved threshold voltage uniformity due to better gate recess control. The DC and microwave characteristics of submicron gate-length Al/sub 0.52/In/sub 0.48/P HEMTs are presented.<>
{"title":"A new pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers HEMT using Al/sub 0.52/In/sub 0.48/P as barrier layer","authors":"G. Ng, Y. Chan, D. Pavlidis, Y. Kwon, T. Brock, J. Kuo","doi":"10.1109/ICIPRM.1993.380573","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380573","url":null,"abstract":"A new pseudomorphic AlInP/InGaAs high electron mobility transistor (HEMT) grown by gas-source molecular-beam epitaxy has been demonstrated. This new pseudomorphic HEMT design offers: (i) a larger /spl Delta/E/sub c/ than pseudomorphic Al/sub 0.22/Ga/sub 0.78/As/I with the same channel composition and thus better confinement, (ii) reduction of DX-center related problems (J. M. Kuo et al., 1993), and (iii) high etching selectivity between GaAs/InGaAs and AlInP and thus improved threshold voltage uniformity due to better gate recess control. The DC and microwave characteristics of submicron gate-length Al/sub 0.52/In/sub 0.48/P HEMTs are presented.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123350020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380599
A. Kohl, A. M. Kusters, R. Muller, S. Brittner, K. Heime, J. Finders, M. Keuter, J. Geurts
To overcome problems due to Al-containing layers the authors have developed a double heterostructure high electron mobility transistor (HEMT) design which only contains p- and n-doped InP and GaInAs. The layers were grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE). These devices show very good performance. This material system suffers from problems with the abruptness of the interface. Therefore the effect of gas switching sequencies of the reactive gases was investigated using Raman spectroscopy. Based on these results a series of HEMTs was fabricated to investigate the impact of different interface configurations on device performance. It is shown that Hall mobilities of carriers, g/sub mext/, f/sub T/ and I/sub DSS/ can be improved by a proper adjustment of gas switching sequencies.<>
为了克服含al层所带来的问题，作者开发了一种双异质结构高电子迁移率晶体管(HEMT)设计，该晶体管仅含有p和n掺杂的InP和GaInAs。采用低压金属有机气相外延法(LP-MOVPE)生长薄膜。这些器件表现出非常好的性能。这种材料体系存在着界面突然性的问题。因此，利用拉曼光谱研究了反应气体开关顺序的影响。在此基础上，制作了一系列的hemt，以研究不同的接口配置对器件性能的影响。结果表明，g/sub next /、f/sub T/和I/sub DSS/等载流子的霍尔迁移率可以通过适当调整气体开关顺序来提高。
{"title":"Effect of interface properties on the characteristics of InP/GaInAs high electron mobility transistors","authors":"A. Kohl, A. M. Kusters, R. Muller, S. Brittner, K. Heime, J. Finders, M. Keuter, J. Geurts","doi":"10.1109/ICIPRM.1993.380599","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380599","url":null,"abstract":"To overcome problems due to Al-containing layers the authors have developed a double heterostructure high electron mobility transistor (HEMT) design which only contains p- and n-doped InP and GaInAs. The layers were grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE). These devices show very good performance. This material system suffers from problems with the abruptness of the interface. Therefore the effect of gas switching sequencies of the reactive gases was investigated using Raman spectroscopy. Based on these results a series of HEMTs was fabricated to investigate the impact of different interface configurations on device performance. It is shown that Hall mobilities of carriers, g/sub mext/, f/sub T/ and I/sub DSS/ can be improved by a proper adjustment of gas switching sequencies.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129755985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380541
I. Maximov, A. Gustafsson, H. Hansson, L. Samuelson, W. Seifert, A. Wiedensohler
The authors present a novel technology for the fabrication of quantum dots (QDs) structures based on the deposition of ultrafine aerosol Ag particles onto the surface of Ga/sub 0.47/In/sub 0.53/As/InP quantum well structures grown by metal organic vapor phase epitaxy. The quantum well structures consisted of 3 quantum wells (QWs) with nominal thickness of 3, 8 and 18 monolayers with the thinnest QW being on top of the structure. A reference layer of Ga/sub 0.47/In/sub 0.53/As was grown below QWs for lattice matching control. The QWs were separated by 15 nm barriers of InP and the cladding layer was about 66 nm in thickness. Silver particles 40 nm in diameter were used as an etching mask. QW thickness dependence of quenching of QD luminescence was observed.<>
{"title":"Aerosol deposition and combined dry/wet etching techniques for fabrication of InP-based quantum dot structures","authors":"I. Maximov, A. Gustafsson, H. Hansson, L. Samuelson, W. Seifert, A. Wiedensohler","doi":"10.1109/ICIPRM.1993.380541","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380541","url":null,"abstract":"The authors present a novel technology for the fabrication of quantum dots (QDs) structures based on the deposition of ultrafine aerosol Ag particles onto the surface of Ga/sub 0.47/In/sub 0.53/As/InP quantum well structures grown by metal organic vapor phase epitaxy. The quantum well structures consisted of 3 quantum wells (QWs) with nominal thickness of 3, 8 and 18 monolayers with the thinnest QW being on top of the structure. A reference layer of Ga/sub 0.47/In/sub 0.53/As was grown below QWs for lattice matching control. The QWs were separated by 15 nm barriers of InP and the cladding layer was about 66 nm in thickness. Silver particles 40 nm in diameter were used as an etching mask. QW thickness dependence of quenching of QD luminescence was observed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129959577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380613
R. Hakimzadeh, S. Bailey
A scanning electron microscope was used to obtain electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned edge surface. An independent technique was used to measure the edge surface-recombination velocity (V/sub s/). These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (C. Donolato, 1982) to obtain the electron minority carrier diffusion length (L/sub n/).<>
{"title":"Minority carrier diffusion length and edge surface-recombination velocity in InP","authors":"R. Hakimzadeh, S. Bailey","doi":"10.1109/ICIPRM.1993.380613","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380613","url":null,"abstract":"A scanning electron microscope was used to obtain electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned edge surface. An independent technique was used to measure the edge surface-recombination velocity (V/sub s/). These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (C. Donolato, 1982) to obtain the electron minority carrier diffusion length (L/sub n/).<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134216332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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