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2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)最新文献

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A 1.2V rail to rail output driving amplifier with a folded Class-AB output stage control circuit 一个1.2V轨对轨输出驱动放大器,具有折叠的ab类输出级控制电路
Fanyang Li, Xiaoquan Liu, Jiwei Huang, Tao Yang
A 1.2V rail to rail output driving amplifier used to drive the hearing aid loudspeaker is proposed in this paper. Since the linearity of the cascoded amplifier degrades with the supply voltage decreasing, a three-stage cascaded amplifier is adopted. For the rail to rail output signal with high linearity, a special folded class-AB output stage current control circuit is incorporated in the amplifier. The minimum supply voltage can be reduced to VGS+2|Vdsat|. Fabricated with a 0.18 $mu mathrm{m}$ CMOS process, the amplifier with the loading resistance 100ohm achieves -85dB THD while operating from a 1.2V supply and using a 1kHz input sine wave.
本文提出了一种用于助听器扬声器驱动的1.2V轨对轨输出驱动放大器。由于级联放大器的线性度随电源电压的降低而降低,因此采用三级级联放大器。对于高线性度的轨对轨输出信号,在放大器中加入了专用的折叠ab类输出级电流控制电路。最小电源电压可降至VGS+2|Vdsat|。该放大器采用0.18 $mu maththrm {m}$ CMOS工艺制作,负载电阻为100ohm,在1.2V电源和1kHz正弦波输入下实现-85dB THD。
{"title":"A 1.2V rail to rail output driving amplifier with a folded Class-AB output stage control circuit","authors":"Fanyang Li, Xiaoquan Liu, Jiwei Huang, Tao Yang","doi":"10.1109/CICTA.2018.8706103","DOIUrl":"https://doi.org/10.1109/CICTA.2018.8706103","url":null,"abstract":"A 1.2V rail to rail output driving amplifier used to drive the hearing aid loudspeaker is proposed in this paper. Since the linearity of the cascoded amplifier degrades with the supply voltage decreasing, a three-stage cascaded amplifier is adopted. For the rail to rail output signal with high linearity, a special folded class-AB output stage current control circuit is incorporated in the amplifier. The minimum supply voltage can be reduced to VGS+2|Vdsat|. Fabricated with a 0.18 $mu mathrm{m}$ CMOS process, the amplifier with the loading resistance 100ohm achieves -85dB THD while operating from a 1.2V supply and using a 1kHz input sine wave.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116152397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical, Thermal and Mechanical Simulation for Embedded Silicon Fan-out Wafer Level Packaging 嵌入式硅扇出晶圆级封装的电学、热学和机械模拟
Cheng Chen, Daquan Yu, L. Wan
A novel embedded silicon fan-out wafer level packaging (eSiFO), which was proposed by Huatian Technology in 2015 and now in production, has a relatively simple manufacturing process eliminating molding and de-bonding process compared to typical fan-out process. This paper briefly introduces eSiFO technology at first, and then mainly studies its electrical and thermal performance, as well as RDL reliability. This study finds that eSiFO technology has a good package performance, and can further provide optimal performance for mobile electronics and potential IoT and 5G applications.
华天科技于2015年提出并已投入生产的新型嵌入式硅扇出晶圆级封装(eSiFO),与典型的扇出工艺相比,其制造工艺相对简单,省去了成型和脱粘过程。本文首先简要介绍了eSiFO技术,然后重点研究了eSiFO技术的电学性能、热学性能以及RDL可靠性。本研究发现,eSiFO技术具有良好的封装性能,可以进一步为移动电子以及潜在的物联网和5G应用提供最优性能。
{"title":"Electrical, Thermal and Mechanical Simulation for Embedded Silicon Fan-out Wafer Level Packaging","authors":"Cheng Chen, Daquan Yu, L. Wan","doi":"10.1109/CICTA.2018.8706049","DOIUrl":"https://doi.org/10.1109/CICTA.2018.8706049","url":null,"abstract":"A novel embedded silicon fan-out wafer level packaging (eSiFO), which was proposed by Huatian Technology in 2015 and now in production, has a relatively simple manufacturing process eliminating molding and de-bonding process compared to typical fan-out process. This paper briefly introduces eSiFO technology at first, and then mainly studies its electrical and thermal performance, as well as RDL reliability. This study finds that eSiFO technology has a good package performance, and can further provide optimal performance for mobile electronics and potential IoT and 5G applications.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115354955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Hardware implementation for the interpolation filter in HEVC standard HEVC标准中插值滤波器的硬件实现
Xiaojian Hong, Longzhao Shi, Qingkun Chen, Danyu Yan
High-efficiency video coding, as a new generation of multimedia video standard, has doubled the compression ratio and increased the computational complexity by 2–3 times of the same image quality in the previous H.264 video standard. The interpolation filter is one of the most complicated parts of motion estimation. However, meeting the requirements of real-time performance is difficult to realize by using a software. Thus, we propose in this paper an architecture for the interpolation filter that is easy to implement by using a hardware, and this newly designed architecture has high utilization of hardware resources. The design uses QUARTUS II integrated on Altera’s Stratix V series chips. The findings show that the utilization of hardware resources in this study is less than those reported in the existing literature. The maximum operating frequency of the hardware architecture proposed in this paper can reach 420.71 MHz, which supports real-time processing of 4K videos.
高效视频编码作为新一代多媒体视频标准,在同等图像质量下,其压缩比是之前H.264视频标准的两倍,计算复杂度提高了2-3倍。插值滤波是运动估计中最复杂的部分之一。然而,满足实时性的要求很难通过软件实现。因此,本文提出了一种易于用硬件实现的插值滤波器架构,该架构具有较高的硬件资源利用率。该设计将QUARTUS II集成在Altera的Stratix V系列芯片上。研究结果表明,本研究的硬件资源利用率低于现有文献报道。本文提出的硬件架构最高工作频率可达420.71 MHz,支持4K视频的实时处理。
{"title":"Hardware implementation for the interpolation filter in HEVC standard","authors":"Xiaojian Hong, Longzhao Shi, Qingkun Chen, Danyu Yan","doi":"10.1109/CICTA.2018.8706042","DOIUrl":"https://doi.org/10.1109/CICTA.2018.8706042","url":null,"abstract":"High-efficiency video coding, as a new generation of multimedia video standard, has doubled the compression ratio and increased the computational complexity by 2–3 times of the same image quality in the previous H.264 video standard. The interpolation filter is one of the most complicated parts of motion estimation. However, meeting the requirements of real-time performance is difficult to realize by using a software. Thus, we propose in this paper an architecture for the interpolation filter that is easy to implement by using a hardware, and this newly designed architecture has high utilization of hardware resources. The design uses QUARTUS II integrated on Altera’s Stratix V series chips. The findings show that the utilization of hardware resources in this study is less than those reported in the existing literature. The maximum operating frequency of the hardware architecture proposed in this paper can reach 420.71 MHz, which supports real-time processing of 4K videos.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122764368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Reconfigurable Processor for Matrix Inversion Computation 矩阵反演计算的可重构处理器
Jiahao Liu, Ye Liu, Xinchun Liu, Jun Zhou
this paper proposes a reconfigurable processor for matrix inversion (MI). Two techniques have been proposed for the MI processor: the proposed reconfigurable architecture allows the processor to support different matrix size. The proposed data scaling technique solves the intermediate date size issue, and therefore supports computation of large matrices. For demonstration, the proposed reconfigurable MI processor has been implemented on FPGA. It is able to compute MI for different matrix size with small mean error and short computation time.
提出了一种可重构矩阵反演处理器。针对MI处理器提出了两种技术:所提出的可重构架构允许处理器支持不同的矩阵大小。所提出的数据缩放技术解决了中间数据大小的问题,因此支持大矩阵的计算。为了验证,本文提出的可重构MI处理器已在FPGA上实现。该方法能够计算不同矩阵大小下的MI,平均误差小,计算时间短。
{"title":"A Reconfigurable Processor for Matrix Inversion Computation","authors":"Jiahao Liu, Ye Liu, Xinchun Liu, Jun Zhou","doi":"10.1109/CICTA.2018.8706051","DOIUrl":"https://doi.org/10.1109/CICTA.2018.8706051","url":null,"abstract":"this paper proposes a reconfigurable processor for matrix inversion (MI). Two techniques have been proposed for the MI processor: the proposed reconfigurable architecture allows the processor to support different matrix size. The proposed data scaling technique solves the intermediate date size issue, and therefore supports computation of large matrices. For demonstration, the proposed reconfigurable MI processor has been implemented on FPGA. It is able to compute MI for different matrix size with small mean error and short computation time.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125330352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Pseudo-Random Number Generator Based On The Leap-Ahead LFSR Architecture 一种基于跃进LFSR结构的伪随机数发生器
Zuxiong Tan, W. Guo, Guoliang Gong, Huaxiang Lu
The linear shift feedback register (LFSR) are widely used in pseudo random number generator (PRNG). Through parallelization, the generation rate can achieve unprecedented speeds. Based on the leap-ahead LFSR architecture, this paper proposed a new parallel architecture which can improve the randomness significantly without changing the output bit-width. Compared with two latest high-quality PRNGs, the proposed architecture in this paper has advantages in randomness, resource utilization and output bandwidth. Especially, the proposed architecture reduces the occupancy of resources up to 62% and lower the area-time up to 53% compared to the recent architecture.
线性移位反馈寄存器(LFSR)广泛应用于伪随机数发生器(PRNG)。通过并行化,生成速度可以达到前所未有的速度。在跃进式LFSR架构的基础上,提出了一种新的并行架构,在不改变输出位宽的情况下,显著提高了系统的随机性。与两种最新的高质量prng相比,本文提出的结构在随机性、资源利用率和输出带宽方面具有优势。特别是,与现有的体系结构相比,所提出的体系结构减少了62%的资源占用,减少了53%的面积时间。
{"title":"A New Pseudo-Random Number Generator Based On The Leap-Ahead LFSR Architecture","authors":"Zuxiong Tan, W. Guo, Guoliang Gong, Huaxiang Lu","doi":"10.1109/CICTA.2018.8706101","DOIUrl":"https://doi.org/10.1109/CICTA.2018.8706101","url":null,"abstract":"The linear shift feedback register (LFSR) are widely used in pseudo random number generator (PRNG). Through parallelization, the generation rate can achieve unprecedented speeds. Based on the leap-ahead LFSR architecture, this paper proposed a new parallel architecture which can improve the randomness significantly without changing the output bit-width. Compared with two latest high-quality PRNGs, the proposed architecture in this paper has advantages in randomness, resource utilization and output bandwidth. Especially, the proposed architecture reduces the occupancy of resources up to 62% and lower the area-time up to 53% compared to the recent architecture.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128391091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Equivalent Thermal Conductivity Modeling of Through-Silicon Via (TSV) Structures 硅通孔(TSV)结构的等效导热模型
Changli Ge, M. Tang, Junfa Mao
A novel approach for modeling through-silicon-via (TSV) structure with equivalent thermal conductivity is proposed in this paper. The basic principle of this method is to replace the original copper via surrounded with silicon-dioxide material by a square column with equivalent thermal conductivity. Based on the curve fitting technique, the empirical formulas for the anisotropic equivalent thermal conductivity are obtained. With the proposed model, the computational resources can be reduced significantly for simulating complicated 3-D structures with arbitrary distributed TSVs. The validity and efficiency of the proposed method are illustrated by the numerical examples.
本文提出了一种模拟具有等效导热系数的硅通孔结构的新方法。该方法的基本原理是用具有等效导热系数的方柱代替原来的铜,并用二氧化硅材料包围。基于曲线拟合技术,得到了各向异性等效导热系数的经验公式。采用该模型,可以显著减少具有任意分布tsv的复杂三维结构的模拟计算资源。数值算例说明了该方法的有效性和有效性。
{"title":"Equivalent Thermal Conductivity Modeling of Through-Silicon Via (TSV) Structures","authors":"Changli Ge, M. Tang, Junfa Mao","doi":"10.1109/CICTA.2018.8705722","DOIUrl":"https://doi.org/10.1109/CICTA.2018.8705722","url":null,"abstract":"A novel approach for modeling through-silicon-via (TSV) structure with equivalent thermal conductivity is proposed in this paper. The basic principle of this method is to replace the original copper via surrounded with silicon-dioxide material by a square column with equivalent thermal conductivity. Based on the curve fitting technique, the empirical formulas for the anisotropic equivalent thermal conductivity are obtained. With the proposed model, the computational resources can be reduced significantly for simulating complicated 3-D structures with arbitrary distributed TSVs. The validity and efficiency of the proposed method are illustrated by the numerical examples.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123771119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Models of laser transmission of ToF and SPAD for the quench circuit design of LiDAR 激光雷达猝灭电路设计中ToF和SPAD的激光传输模型
Rui Wang, Nan Qi, Liyuan Liu, Jian Liu, N. Wu
In this paper, the physical process of laser transmitting is modelled and analyzed, and this model is very helpful to analyze the requirements of different pixel structures on the frequency of laser emitter. In order to design the active quench circuit better, an accurate SPAD model is built with the Verilog-A description language. Then the circuit is presented and designed in 0.13um SiGe BiCMOS technology.
本文对激光传输的物理过程进行了建模和分析,该模型有助于分析不同像素结构对激光发射器频率的要求。为了更好地设计有源猝灭电路,利用Verilog-A描述语言建立了精确的SPAD模型。然后提出并设计了0.13um SiGe BiCMOS电路。
{"title":"Models of laser transmission of ToF and SPAD for the quench circuit design of LiDAR","authors":"Rui Wang, Nan Qi, Liyuan Liu, Jian Liu, N. Wu","doi":"10.1109/CICTA.2018.8706069","DOIUrl":"https://doi.org/10.1109/CICTA.2018.8706069","url":null,"abstract":"In this paper, the physical process of laser transmitting is modelled and analyzed, and this model is very helpful to analyze the requirements of different pixel structures on the frequency of laser emitter. In order to design the active quench circuit better, an accurate SPAD model is built with the Verilog-A description language. Then the circuit is presented and designed in 0.13um SiGe BiCMOS technology.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122618626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
[Title page] (标题页)
{"title":"[Title page]","authors":"","doi":"10.1109/cicta.2018.8706050","DOIUrl":"https://doi.org/10.1109/cicta.2018.8706050","url":null,"abstract":"","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134267320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual-band Inverted-F Antenna with Tunable Inductor and Capacitor for 5G Mobile Communication 5G移动通信电感电容器可调谐双频倒f天线
Minjie Ye, Yulong Zhang, Cinan Wu, Junfeng Cheng, Zewen Liu
A novel dual-band inverted-F antenna (IFA) with tunable inductor and capacitor (TIC) for 5G mobile communication is proposed. The tuning ranges of two tunable capacitors (C1 and C2) and one tunable inductor (L) are 0.1-1.0 pF, 1.3-4.8 pF, and 2-6 nH respectively. Simulation results of the dual-band IFA with TIC are obtained by using HFSS. It shows that two frequency ranges of the dual-band IFA with TIC are 2.74-3.74 GHz and 4.44-5.0 GHz at the return loss better than -15 dB. The frequency of the dual-band IFA with TIC can fully cover the 5G spectrum in China.
提出了一种用于5G移动通信的电感电容可调谐双频倒f天线(IFA)。两个可调谐电容器(C1和C2)和一个可调谐电感(L)的调谐范围分别为0.1-1.0 pF、1.3-4.8 pF和2-6 nH。利用HFSS得到了带TIC的双频IFA的仿真结果。结果表明,在回波损耗优于-15 dB的情况下,带TIC的双频IFA的两个频率范围分别为2.74 ~ 3.74 GHz和4.44 ~ 5.0 GHz。带TIC的双频IFA的频率可以完全覆盖中国的5G频谱。
{"title":"Dual-band Inverted-F Antenna with Tunable Inductor and Capacitor for 5G Mobile Communication","authors":"Minjie Ye, Yulong Zhang, Cinan Wu, Junfeng Cheng, Zewen Liu","doi":"10.1109/CICTA.2018.8706075","DOIUrl":"https://doi.org/10.1109/CICTA.2018.8706075","url":null,"abstract":"A novel dual-band inverted-F antenna (IFA) with tunable inductor and capacitor (TIC) for 5G mobile communication is proposed. The tuning ranges of two tunable capacitors (C1 and C2) and one tunable inductor (L) are 0.1-1.0 pF, 1.3-4.8 pF, and 2-6 nH respectively. Simulation results of the dual-band IFA with TIC are obtained by using HFSS. It shows that two frequency ranges of the dual-band IFA with TIC are 2.74-3.74 GHz and 4.44-5.0 GHz at the return loss better than -15 dB. The frequency of the dual-band IFA with TIC can fully cover the 5G spectrum in China.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"193 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134268012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An Exponential Current Generation Circuit Using the Taylor Series Approximation for Neural Stimulators 基于泰勒级数近似的神经刺激器指数电流产生电路
Z. Wu, Xu Liu, Milin Zhang, Wensi Wang
An exponential current generation circuit for neural stimulators is presented. Compared to the conventional exponential current generation circuits, the proposed circuit features higher bandwidth and a smaller error of 2.34%. The output of the proposed exponential current generation circuit ranges from 1.16 to 75.36 $mu A$. This circuit is designed in a 180-nm CMOS technology under 1.8-V supply voltage.
提出了一种用于神经刺激器的指数电流产生电路。与传统的指数电流产生电路相比,该电路具有更高的带宽和更小的误差(2.34%)。所提出的指数电流产生电路的输出范围从1.16到75.36 $mu A$。该电路采用180nm CMOS技术设计,电源电压为1.8 v。
{"title":"An Exponential Current Generation Circuit Using the Taylor Series Approximation for Neural Stimulators","authors":"Z. Wu, Xu Liu, Milin Zhang, Wensi Wang","doi":"10.1109/CICTA.2018.8705718","DOIUrl":"https://doi.org/10.1109/CICTA.2018.8705718","url":null,"abstract":"An exponential current generation circuit for neural stimulators is presented. Compared to the conventional exponential current generation circuits, the proposed circuit features higher bandwidth and a smaller error of 2.34%. The output of the proposed exponential current generation circuit ranges from 1.16 to 75.36 $mu A$. This circuit is designed in a 180-nm CMOS technology under 1.8-V supply voltage.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133137707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
期刊
2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)
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