Pub Date : 2012-10-01DOI: 10.1109/EPEPS.2012.6457852
D. Kostka, A. Scogna, Jianmin Zhang, K. Qiu, R. Brooks
The electrical performance of vias in multilayer PCBs is investigated. In particular the resonance effect due to overlapping anti-pads is characterized and an analytical formulation based on the dimensions of the cavity formed by the anti-pads and the vias is used to predict such a resonance. A prototype board is fabricated and measured results confirm the predicted results obtained from 3D electromagnetic simulation.
{"title":"Electrical performance of via transitions in the presence of overlapping anti-pads","authors":"D. Kostka, A. Scogna, Jianmin Zhang, K. Qiu, R. Brooks","doi":"10.1109/EPEPS.2012.6457852","DOIUrl":"https://doi.org/10.1109/EPEPS.2012.6457852","url":null,"abstract":"The electrical performance of vias in multilayer PCBs is investigated. In particular the resonance effect due to overlapping anti-pads is characterized and an analytical formulation based on the dimensions of the cavity formed by the anti-pads and the vias is used to predict such a resonance. A prototype board is fabricated and measured results confirm the predicted results obtained from 3D electromagnetic simulation.","PeriodicalId":188377,"journal":{"name":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129636421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/EPEPS.2012.6457905
J. Ochoa, A. Cangellaris
A computer model is proposed for the fast predictive analysis of the impact of interconnect routing variability on their broadband signal transmission properties. Through the use of a multi-conductor transmission line model of the interconnect structure and rational function interpolation in the frequency domain, the proposed model propagates routing variability described in terms of a set of properly defined random variables to broadband, stochastic scattering parameters for the transmission channel. In this manner, an efficient Monte Carlo analysis can be performed for the prediction of the statistics of the transient response of the channel due to routing uncertainty.
{"title":"Fast analysis of the impact of interconnect routing variability on signal degradation","authors":"J. Ochoa, A. Cangellaris","doi":"10.1109/EPEPS.2012.6457905","DOIUrl":"https://doi.org/10.1109/EPEPS.2012.6457905","url":null,"abstract":"A computer model is proposed for the fast predictive analysis of the impact of interconnect routing variability on their broadband signal transmission properties. Through the use of a multi-conductor transmission line model of the interconnect structure and rational function interpolation in the frequency domain, the proposed model propagates routing variability described in terms of a set of properly defined random variables to broadband, stochastic scattering parameters for the transmission channel. In this manner, an efficient Monte Carlo analysis can be performed for the prediction of the statistics of the transient response of the channel due to routing uncertainty.","PeriodicalId":188377,"journal":{"name":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132393443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/EPEPS.2012.6457872
A. Das, D. Gope
An efficient parallelization algorithm for the Fast Multipole Method which aims to alleviate the parallelization bottleneck arising from lower job-count closer to root levels is presented. An electrostatic problem of 12 million non-uniformly distributed mesh elements is solved with 80-85% parallel efficiency in matrix setup and matrix-vector product using 60GB and 16 threads on shared memory architecture.
{"title":"Hybrid aggregated-vector algorithm for efficient parallelization of Fast Multipole Method","authors":"A. Das, D. Gope","doi":"10.1109/EPEPS.2012.6457872","DOIUrl":"https://doi.org/10.1109/EPEPS.2012.6457872","url":null,"abstract":"An efficient parallelization algorithm for the Fast Multipole Method which aims to alleviate the parallelization bottleneck arising from lower job-count closer to root levels is presented. An electrostatic problem of 12 million non-uniformly distributed mesh elements is solved with 80-85% parallel efficiency in matrix setup and matrix-vector product using 60GB and 16 threads on shared memory architecture.","PeriodicalId":188377,"journal":{"name":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125167798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/EPEPS.2012.6457880
X. Jiang, D. Oh
Simultaneous switching noise (SSN) continues to play an important role in single-ended signaling systems. Modeling and simulating SSN is quite challenging as it requires a complex system model comprised of numerous signal, power, and ground conductors and planes. An efficient modeling approach based on the special property associated with SSN simulation assumptions was published previously. It assumed a worst case switching noise condition where all SSN aggressors were switching at the same time with same data pattern. Under this assumption, the complexity of the model is drastically reduced by introducing the supernet which is a non-physical net representing all the aggressors' impact. In this paper, we present numerical validation of the previous modeling approach.
{"title":"Validation of reduced-terminal models in fast SSN analysis","authors":"X. Jiang, D. Oh","doi":"10.1109/EPEPS.2012.6457880","DOIUrl":"https://doi.org/10.1109/EPEPS.2012.6457880","url":null,"abstract":"Simultaneous switching noise (SSN) continues to play an important role in single-ended signaling systems. Modeling and simulating SSN is quite challenging as it requires a complex system model comprised of numerous signal, power, and ground conductors and planes. An efficient modeling approach based on the special property associated with SSN simulation assumptions was published previously. It assumed a worst case switching noise condition where all SSN aggressors were switching at the same time with same data pattern. Under this assumption, the complexity of the model is drastically reduced by introducing the supernet which is a non-physical net representing all the aggressors' impact. In this paper, we present numerical validation of the previous modeling approach.","PeriodicalId":188377,"journal":{"name":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125115874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/EPEPS.2012.6457843
Paolo Manfredi, I. Stievano, Guido Perrone, P. Bardella, F. Canavero
This paper addresses the stochastic simulation of high-speed optical interconnects. It provides an effective solution for the inclusion of the effects of process variation or possible unknown device characteristics on the system response. The proposed approach is based on the stochastic collocation method and Lagrange interpolation. The results obtained on the transient analysis of a realistic on-board optical link with uncertain parameters conclude the paper.
{"title":"A statistical assessment of opto-electronic links","authors":"Paolo Manfredi, I. Stievano, Guido Perrone, P. Bardella, F. Canavero","doi":"10.1109/EPEPS.2012.6457843","DOIUrl":"https://doi.org/10.1109/EPEPS.2012.6457843","url":null,"abstract":"This paper addresses the stochastic simulation of high-speed optical interconnects. It provides an effective solution for the inclusion of the effects of process variation or possible unknown device characteristics on the system response. The proposed approach is based on the stochastic collocation method and Lagrange interpolation. The results obtained on the transient analysis of a realistic on-board optical link with uncertain parameters conclude the paper.","PeriodicalId":188377,"journal":{"name":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121280598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Through Silicon Vias (TSVs) have been mostly modeled assuming that the TSV metal-insulator-semiconductor (MIS) interface is not biased and silicon substrate is just a lossy, low conductive medium. These modeling methods are based on small signal analysis and don't consider semiconductor carrier accumulation or depletion due to static biasing or large signals. This paper argues that the complementary nature of differential signals introduces a virtual ground and that the voltage difference between a TSV and the virtual ground automatically biases TSV MIS interface, causing carrier accumulation or depletion. In the meantime, large digital signal swing makes the depletion region to change its width dynamically, which introduces a non-linear, large signal TSV capacitance. This capacitance is modeled analytically in this paper, a new equivalent circuit model for differential TSVs are proposed, and the impact on the performance of high-speed differential signals is examined in channel simulations.
{"title":"Modeling differential Through-Silicon-Vias (TSVs) with large signal, non-linear capacitance","authors":"Yaping Zhou, Huabo Chen, Xing Wang, Wenjie Mao, Wenjun Shi, Yu Chang","doi":"10.1109/EPEPS.2012.6457895","DOIUrl":"https://doi.org/10.1109/EPEPS.2012.6457895","url":null,"abstract":"Through Silicon Vias (TSVs) have been mostly modeled assuming that the TSV metal-insulator-semiconductor (MIS) interface is not biased and silicon substrate is just a lossy, low conductive medium. These modeling methods are based on small signal analysis and don't consider semiconductor carrier accumulation or depletion due to static biasing or large signals. This paper argues that the complementary nature of differential signals introduces a virtual ground and that the voltage difference between a TSV and the virtual ground automatically biases TSV MIS interface, causing carrier accumulation or depletion. In the meantime, large digital signal swing makes the depletion region to change its width dynamically, which introduces a non-linear, large signal TSV capacitance. This capacitance is modeled analytically in this paper, a new equivalent circuit model for differential TSVs are proposed, and the impact on the performance of high-speed differential signals is examined in channel simulations.","PeriodicalId":188377,"journal":{"name":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","volume":"454 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133287735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/EPEPS.2012.6457898
T. Watanabe
The power integrity is one of the serious problem in the design of three-dimensional integrated circuits and packaging. Usually, the board and interposer carrying them have multilayered power/ground plane, which plays an important role in the power distribution network (PDN) of the system. Therefore, the modeling and simulation of multilayered power/ground planes become increasingly important.
{"title":"Hybrid modeling method for transient simulation of multilayered power/ground planes","authors":"T. Watanabe","doi":"10.1109/EPEPS.2012.6457898","DOIUrl":"https://doi.org/10.1109/EPEPS.2012.6457898","url":null,"abstract":"The power integrity is one of the serious problem in the design of three-dimensional integrated circuits and packaging. Usually, the board and interposer carrying them have multilayered power/ground plane, which plays an important role in the power distribution network (PDN) of the system. Therefore, the modeling and simulation of multilayered power/ground planes become increasingly important.","PeriodicalId":188377,"journal":{"name":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134437804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/EPEPS.2012.6457896
T. Comberiate, J. Schutt-Ainé
X parameters have been shown to have a wide array of applications in the modeling of nonlinear devices and systems. In this work, the polyharmonic distortion (PHD) model and the latency insertion method (LIM) are combined to generate X parameters describing the nonlinear relationship between power waves. This technique leverages the speed and convergence advantages of the LIM simulation method to generate frequency-domain models. Results are compared with those of other methods.
{"title":"Using the latency insertion method (LIM) to generate X parameters","authors":"T. Comberiate, J. Schutt-Ainé","doi":"10.1109/EPEPS.2012.6457896","DOIUrl":"https://doi.org/10.1109/EPEPS.2012.6457896","url":null,"abstract":"X parameters have been shown to have a wide array of applications in the modeling of nonlinear devices and systems. In this work, the polyharmonic distortion (PHD) model and the latency insertion method (LIM) are combined to generate X parameters describing the nonlinear relationship between power waves. This technique leverages the speed and convergence advantages of the LIM simulation method to generate frequency-domain models. Results are compared with those of other methods.","PeriodicalId":188377,"journal":{"name":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123617158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/EPEPS.2012.6457885
M. Yi, M. Swaminathan, Z. Qian, A. Aydiner
The Laguerre-FDTD scheme is unconditionally stable for transient electromagnetic simulation and is ideally suited for modeling multi-scale structures such as packaging and interconnects. In this work, skin effect is incorporated into Laguerre-FDTD to ensure fast simulation speed and high accuracy with less dense mesh applied. The skin effect is modeled by applying the surface impedance boundary condition (SIBC) on the interface of conductor and dielectric material. A method of transferring the time domain convolution term in SIBC formulation into Laguerre domain is proposed. Results from microstrip and TSV structures have been presented which show good calculation accuracy and efficiency of the SIBC incorporated Laguerre-FDTD method.
{"title":"Skin effect modeling of interconnects using the Laguerre-FDTD scheme","authors":"M. Yi, M. Swaminathan, Z. Qian, A. Aydiner","doi":"10.1109/EPEPS.2012.6457885","DOIUrl":"https://doi.org/10.1109/EPEPS.2012.6457885","url":null,"abstract":"The Laguerre-FDTD scheme is unconditionally stable for transient electromagnetic simulation and is ideally suited for modeling multi-scale structures such as packaging and interconnects. In this work, skin effect is incorporated into Laguerre-FDTD to ensure fast simulation speed and high accuracy with less dense mesh applied. The skin effect is modeled by applying the surface impedance boundary condition (SIBC) on the interface of conductor and dielectric material. A method of transferring the time domain convolution term in SIBC formulation into Laguerre domain is proposed. Results from microstrip and TSV structures have been presented which show good calculation accuracy and efficiency of the SIBC incorporated Laguerre-FDTD method.","PeriodicalId":188377,"journal":{"name":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122076470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/EPEPS.2012.6457861
N. Huang, L. J. Jiang, Huichun Yu, Gang Li, Shuai Xu, Huasheng Ren
The IC packaging EMC/SI/PI problems have been broadly attested. But IC packaging EMI was seldom addressed. Because the EMI emission by IC packagings is increasingly significant, in this paper, EMI behaviors are systematically studied. To fundamentally understand the radiation mechanism, radiated contributions from ground lids, vias, and traces of the packaging are investigated and modeled separately. It is seen that the packaging EMI has clearly low frequency and high frequency behaviors. The low frequency behavior is due to the Hertzian dipole effects of vias. The high frequency behavior is due to the radiation of excited cavity modes. Both theoretical analysis based on first principles and simulated results based on the numerical full wave solver are provided to find out critical impact factors to IC packaging EMI. This work provides basic modeling components for comprehensive radiation studies in the future. It directly benefits fundamental understandings and guidelines for the optimal design of the packaging EMI reduction.
{"title":"Fundamental components of the IC packaging electromagnetic interference (EMI) analysis","authors":"N. Huang, L. J. Jiang, Huichun Yu, Gang Li, Shuai Xu, Huasheng Ren","doi":"10.1109/EPEPS.2012.6457861","DOIUrl":"https://doi.org/10.1109/EPEPS.2012.6457861","url":null,"abstract":"The IC packaging EMC/SI/PI problems have been broadly attested. But IC packaging EMI was seldom addressed. Because the EMI emission by IC packagings is increasingly significant, in this paper, EMI behaviors are systematically studied. To fundamentally understand the radiation mechanism, radiated contributions from ground lids, vias, and traces of the packaging are investigated and modeled separately. It is seen that the packaging EMI has clearly low frequency and high frequency behaviors. The low frequency behavior is due to the Hertzian dipole effects of vias. The high frequency behavior is due to the radiation of excited cavity modes. Both theoretical analysis based on first principles and simulated results based on the numerical full wave solver are provided to find out critical impact factors to IC packaging EMI. This work provides basic modeling components for comprehensive radiation studies in the future. It directly benefits fundamental understandings and guidelines for the optimal design of the packaging EMI reduction.","PeriodicalId":188377,"journal":{"name":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125914886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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