The accelerating demand for wireless communication necessitates wideband, energy-efficient photonic sub-terahertz sources to enable ultrafast data transfer. However, as critical components for terahertz photomixing, photodiodes face a fundamental trade-off between bandwidth and quantum efficiency, presenting a major obstacle to achieve high-speed performance with high optoelectronic conversion efficiency. Here we overcome this challenge by demonstrating an InP-based, waveguide-integrated modified uni-travelling-carrier photodiode with bandwidth exceeding 200 GHz and a bandwidth–efficiency product surpassing 130 GHz. Incorporating a spot-size converter together with optimized electric field distribution, balanced carrier transport and minimized parasitic capacitance, the device achieves a 3-dB bandwidth of 206 GHz and an external responsivity of 0.81 A W−1, setting a new bandwidth–efficiency product benchmark. Packaged with WR-5.1 waveguide output, it delivers radio-frequency power exceeding –5 dBm across the 127–185-GHz frequency range. As a proof of concept, we achieved wireless transmission over 54 m with a single-line rate of up to 120 Gbps, leveraging photonics-aided technology without requiring a low-noise amplifier. This work establishes a pathway to significantly enhance optical power budgets and reduce energy consumption, presenting a transformative step towards high-bandwidth, high-efficiency sub-terahertz communication systems and next-generation wireless networks. A uni-travelling-carrier photodiode with 206-GHz bandwidth, bandwidth–efficiency product surpassing 130 GHz and external responsivity of 0.81 A W−1 is demonstrated. Radio-frequency power exceeding –5 dBm and single-line 120-Gbps wireless transmission across 54 m were achieved, without low-noise amplifiers.
无线通信需求的不断增长需要宽带、高能效的亚太赫兹光子源来实现超快的数据传输。然而，作为太赫兹光混合的关键部件，光电二极管面临着带宽和量子效率之间的基本权衡，这是实现高速性能和高光电转换效率的主要障碍。在这里，我们通过展示一种基于inp的波导集成改进单行载流子光电二极管来克服这一挑战，其带宽超过200 GHz，带宽效率产品超过130 GHz。该器件采用了一个点尺寸的变换器，优化了电场分布，平衡了载流子输运和最小化了寄生电容，实现了206ghz的3db带宽和0.81 a W−1的外部响应，树立了新的带宽效率产品基准。封装WR-5.1波导输出，在127 - 185 ghz频率范围内提供超过-5 dBm的射频功率。作为概念验证，我们实现了54米以上的无线传输，单线速率高达120 Gbps，利用光子学辅助技术，无需低噪声放大器。这项工作建立了一条显著提高光功率预算和降低能耗的途径，向高带宽、高效率亚太赫兹通信系统和下一代无线网络迈出了变革性的一步。研制了一种带宽为206ghz、带宽效率产品超过130ghz、外部响应度为0.81 A W−1的单载波光电二极管。在没有低噪声放大器的情况下，实现了超过-5 dBm的射频功率和跨越54 m的单线120 gbps无线传输。
{"title":"Modified uni-travelling-carrier photodiodes with 206 GHz bandwidth and 0.81 A W−1 external responsivity","authors":"Linze Li, Tianyu Long, Xiongwei Yang, Zhouze Zhang, Luyu Wang, Jingyi Wang, Mingxu Wang, Juanjuan Lu, Jianjun Yu, Baile Chen","doi":"10.1038/s41566-025-01784-0","DOIUrl":"10.1038/s41566-025-01784-0","url":null,"abstract":"The accelerating demand for wireless communication necessitates wideband, energy-efficient photonic sub-terahertz sources to enable ultrafast data transfer. However, as critical components for terahertz photomixing, photodiodes face a fundamental trade-off between bandwidth and quantum efficiency, presenting a major obstacle to achieve high-speed performance with high optoelectronic conversion efficiency. Here we overcome this challenge by demonstrating an InP-based, waveguide-integrated modified uni-travelling-carrier photodiode with bandwidth exceeding 200 GHz and a bandwidth–efficiency product surpassing 130 GHz. Incorporating a spot-size converter together with optimized electric field distribution, balanced carrier transport and minimized parasitic capacitance, the device achieves a 3-dB bandwidth of 206 GHz and an external responsivity of 0.81 A W−1, setting a new bandwidth–efficiency product benchmark. Packaged with WR-5.1 waveguide output, it delivers radio-frequency power exceeding –5 dBm across the 127–185-GHz frequency range. As a proof of concept, we achieved wireless transmission over 54 m with a single-line rate of up to 120 Gbps, leveraging photonics-aided technology without requiring a low-noise amplifier. This work establishes a pathway to significantly enhance optical power budgets and reduce energy consumption, presenting a transformative step towards high-bandwidth, high-efficiency sub-terahertz communication systems and next-generation wireless networks. A uni-travelling-carrier photodiode with 206-GHz bandwidth, bandwidth–efficiency product surpassing 130 GHz and external responsivity of 0.81 A W−1 is demonstrated. Radio-frequency power exceeding –5 dBm and single-line 120-Gbps wireless transmission across 54 m were achieved, without low-noise amplifiers.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 12","pages":"1301-1308"},"PeriodicalIF":32.9,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145477786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-07DOI: 10.1038/s41566-025-01791-1
Guixiang Li, Zuhong Zhang, Benjamin Agyei-Tuffour, Luyan Wu, Thomas W. Gries, Karunanantharajah Prashanthan, Artem Musiienko, Jinzhao Li, Rui Zhu, Lucy J. F. Hart, Luyao Wang, Zhe Li, Bo Hou, Michele Saba, Piers R. F. Barnes, Jenny Nelson, Paul J. Dyson, Mohammad Khaja Nazeeruddin, Meng Li, Antonio Abate
Surface passivation in perovskite solar cells can enhance device efficiency, yet incomplete interfacial functionality poses challenges to long-term reliability. Here we present a strategic interfacial engineering approach using sodium heptafluorobutyrate to fully functionalize the perovskite surface. Sodium heptafluorobutyrate acts as an ion shield that tunes the perovskite surface work function and increases the defect formation energy, resulting in an improved interface with the electron transport layer that minimizes recombination and boosts electron extraction under operation. We find that a sodium-heptafluorobutyrate-functionalized perovskite surface promotes a uniform, compact C60 layer that effectively blocks ion diffusion and stabilizes the device stack. This approach allows p–i–n perovskite solar cells to achieve a record power conversion efficiency (PCE) of 27.02% (certified 26.96% with a maximum-power-point-tracking PCE of 26.61%). Devices with an active area of 1 cm2 deliver a PCE of 25.95%. Perovskite solar cells retain 100% of their initial efficiency following 1,200 h of continuous 1-sun illumination at the maximum power point. Devices also demonstrate exceptional thermal stability, retaining 92% of the initial PCE when ageing at 85 °C for 1,800 h and 94% after 200 thermal cycles between –40 °C and +85 °C. Engineering the perovskite–electrical contact interface with sodium heptafluorobutyrate reduces interfacial defects and improves charge transport in perovskite solar cells. Functionalized devices deliver a certified power conversion efficiency of 26.96%, which is fully retained after 1,200 h of continuous operation under 1-sun illumination.
{"title":"Stabilizing high-efficiency perovskite solar cells via strategic interfacial contact engineering","authors":"Guixiang Li, Zuhong Zhang, Benjamin Agyei-Tuffour, Luyan Wu, Thomas W. Gries, Karunanantharajah Prashanthan, Artem Musiienko, Jinzhao Li, Rui Zhu, Lucy J. F. Hart, Luyao Wang, Zhe Li, Bo Hou, Michele Saba, Piers R. F. Barnes, Jenny Nelson, Paul J. Dyson, Mohammad Khaja Nazeeruddin, Meng Li, Antonio Abate","doi":"10.1038/s41566-025-01791-1","DOIUrl":"10.1038/s41566-025-01791-1","url":null,"abstract":"Surface passivation in perovskite solar cells can enhance device efficiency, yet incomplete interfacial functionality poses challenges to long-term reliability. Here we present a strategic interfacial engineering approach using sodium heptafluorobutyrate to fully functionalize the perovskite surface. Sodium heptafluorobutyrate acts as an ion shield that tunes the perovskite surface work function and increases the defect formation energy, resulting in an improved interface with the electron transport layer that minimizes recombination and boosts electron extraction under operation. We find that a sodium-heptafluorobutyrate-functionalized perovskite surface promotes a uniform, compact C60 layer that effectively blocks ion diffusion and stabilizes the device stack. This approach allows p–i–n perovskite solar cells to achieve a record power conversion efficiency (PCE) of 27.02% (certified 26.96% with a maximum-power-point-tracking PCE of 26.61%). Devices with an active area of 1 cm2 deliver a PCE of 25.95%. Perovskite solar cells retain 100% of their initial efficiency following 1,200 h of continuous 1-sun illumination at the maximum power point. Devices also demonstrate exceptional thermal stability, retaining 92% of the initial PCE when ageing at 85 °C for 1,800 h and 94% after 200 thermal cycles between –40 °C and +85 °C. Engineering the perovskite–electrical contact interface with sodium heptafluorobutyrate reduces interfacial defects and improves charge transport in perovskite solar cells. Functionalized devices deliver a certified power conversion efficiency of 26.96%, which is fully retained after 1,200 h of continuous operation under 1-sun illumination.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"20 1","pages":"55-62"},"PeriodicalIF":32.9,"publicationDate":"2025-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01791-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-07DOI: 10.1038/s41566-025-01786-y
Jiaxin Zhao, Antonio Fieramosca, Kevin Dini, Qiuyu Shang, Ruiqi Bao, Yuan Luo, Kaijun Shen, Yang Zhao, Rui Su, Jesús Zúñiga-Pérez, Weibo Gao, Vincenzo Ardizzone, Daniele Sanvitto, Qihua Xiong, Timothy C. H. Liew
Spintronics, whereby electron spin is harnessed for carrying and processing information, could play an important role in the future of information technology. However, despite ongoing research efforts, establishing a materials platform that suits spin-optronics, particularly one that operates effectively at ambient temperatures, continues to represent a challenge. Recent advancements in transition metal dichalcogenides are opening up new opportunities, with exciton-polaritons in these materials being promising for the development of spintronic customizable devices that function at ambient temperatures. Although transition metal dichalcogenide polaritons have shown promising potential, spin-anisotropic nonlinearities have been missing. Here we demonstrate the absence of spin-anisotropic interaction in a monolayer WS2 microcavity at room temperature and show how spin anisotropy can be recovered by engineering double WS2 layer structures with varied interlayer spacing. We attribute this phenomenon to a distinctive feature in exciton–polariton physics: layer-dependent polariton–phonon coupling. We use theoretical calculations of the phonon electrostatic potentials finding a drastically different coupling strength for single and double monolayer samples and discuss qualitatively how this explains the observed spin-anisotropic response. This is further consistent with experiments on multi-WS2 layer samples and the identification of a critical separation distance, above which an effective single monolayer spin-anisotropic response is recovered, both in experiment and theory. Our work lays the groundwork for the development of spin-optronic polaritonic devices at room temperature. A room-temperature double-layer WS2 microcavity is used to explore spin anisotropy and tune it with interlayer spacing.
{"title":"Room-temperature spin-layer locking of exciton–polariton nonlinearities in a WS2 microcavity","authors":"Jiaxin Zhao, Antonio Fieramosca, Kevin Dini, Qiuyu Shang, Ruiqi Bao, Yuan Luo, Kaijun Shen, Yang Zhao, Rui Su, Jesús Zúñiga-Pérez, Weibo Gao, Vincenzo Ardizzone, Daniele Sanvitto, Qihua Xiong, Timothy C. H. Liew","doi":"10.1038/s41566-025-01786-y","DOIUrl":"10.1038/s41566-025-01786-y","url":null,"abstract":"Spintronics, whereby electron spin is harnessed for carrying and processing information, could play an important role in the future of information technology. However, despite ongoing research efforts, establishing a materials platform that suits spin-optronics, particularly one that operates effectively at ambient temperatures, continues to represent a challenge. Recent advancements in transition metal dichalcogenides are opening up new opportunities, with exciton-polaritons in these materials being promising for the development of spintronic customizable devices that function at ambient temperatures. Although transition metal dichalcogenide polaritons have shown promising potential, spin-anisotropic nonlinearities have been missing. Here we demonstrate the absence of spin-anisotropic interaction in a monolayer WS2 microcavity at room temperature and show how spin anisotropy can be recovered by engineering double WS2 layer structures with varied interlayer spacing. We attribute this phenomenon to a distinctive feature in exciton–polariton physics: layer-dependent polariton–phonon coupling. We use theoretical calculations of the phonon electrostatic potentials finding a drastically different coupling strength for single and double monolayer samples and discuss qualitatively how this explains the observed spin-anisotropic response. This is further consistent with experiments on multi-WS2 layer samples and the identification of a critical separation distance, above which an effective single monolayer spin-anisotropic response is recovered, both in experiment and theory. Our work lays the groundwork for the development of spin-optronic polaritonic devices at room temperature. A room-temperature double-layer WS2 microcavity is used to explore spin anisotropy and tune it with interlayer spacing.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 12","pages":"1353-1360"},"PeriodicalIF":32.9,"publicationDate":"2025-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the advanced development of quantum science, constructing a large-scale quantum network has become a prominent area in the future of quantum information technology. Future quantum networks promise to enable a wide range of groundbreaking applications and to unlock fundamentally new technologies in information security and large-scale computation. The future quantum internet is required to connect quantum information processors to achieve unparalleled capabilities in secret communication and enable quantum communication between any two points on Earth. However, existing quantum networks are primarily designed to facilitate communication between end users within their own networks. Bridging different independent networks to form a fully connected quantum internet has become a pressing challenge for future quantum communication systems. Here we demonstrate the quantum fusion of two independent networks based on multi-user entanglement swapping, to merge two 10-user networks into a larger network with 18 users in a quantum correlation layer. By performing Bell state measurements between two non-neighbouring nodes, users from different networks can establish entanglement, allowing all 18 users to ultimately communicate with each other using the swapped states. Our approach opens up promising opportunities for establishing quantum entanglement between remote nodes across different networks, facilitating versatile quantum information interconnects and enabling the construction of large-scale intercity quantum communication networks. The quantum fusion of two independent 10-user networks is demonstrated based on multi-user entanglement swapping. Active temporal and wavelength multiplexing schemes are developed to merge the two networks into a larger network with 18 users in the quantum correlation layer.
{"title":"Quantum fusion of independent networks based on multi-user entanglement swapping","authors":"Yiwen Huang, Yilin Yang, Hao Li, Jiayu Wang, Jing Qiu, Zhantong Qi, Yuting Zhang, Yuanhua Li, Yuanlin Zheng, Xianfeng Chen","doi":"10.1038/s41566-025-01792-0","DOIUrl":"10.1038/s41566-025-01792-0","url":null,"abstract":"With the advanced development of quantum science, constructing a large-scale quantum network has become a prominent area in the future of quantum information technology. Future quantum networks promise to enable a wide range of groundbreaking applications and to unlock fundamentally new technologies in information security and large-scale computation. The future quantum internet is required to connect quantum information processors to achieve unparalleled capabilities in secret communication and enable quantum communication between any two points on Earth. However, existing quantum networks are primarily designed to facilitate communication between end users within their own networks. Bridging different independent networks to form a fully connected quantum internet has become a pressing challenge for future quantum communication systems. Here we demonstrate the quantum fusion of two independent networks based on multi-user entanglement swapping, to merge two 10-user networks into a larger network with 18 users in a quantum correlation layer. By performing Bell state measurements between two non-neighbouring nodes, users from different networks can establish entanglement, allowing all 18 users to ultimately communicate with each other using the swapped states. Our approach opens up promising opportunities for establishing quantum entanglement between remote nodes across different networks, facilitating versatile quantum information interconnects and enabling the construction of large-scale intercity quantum communication networks. The quantum fusion of two independent 10-user networks is demonstrated based on multi-user entanglement swapping. Active temporal and wavelength multiplexing schemes are developed to merge the two networks into a larger network with 18 users in the quantum correlation layer.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"20 1","pages":"87-95"},"PeriodicalIF":32.9,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-04DOI: 10.1038/s41566-025-01794-y
Evaldas Svirplys, Harry Jones, Gregor Loisch, John Thomas, Maryam Huck, Oleg Kornilov, Matthew James Garland, Jonathan C. Wood, Marc J. J. Vrakking, Jens Osterhoff, Bernd Schütte
Broadband optical pulses with attosecond to femtosecond durations provide unique opportunities for studies of time-resolved electron dynamics. However, focusing these pulses—typically ranging from the vacuum ultraviolet to the soft-X-ray region—remains challenging. Conventional refractive lenses are not suitable owing to large dispersion and strong absorption, whereas reflective optics do not suffer from these issues but have high losses. Here we demonstrate a tunable hydrogen plasma lens to focus broadband extreme-ultraviolet attosecond pulses with energies of around 20 eV and 80 eV. Simulation results suggest that the stretching of attosecond pulses is negligible, and temporal compression is possible when atto-chirp is included. A key advantage of the plasma lens is its compatibility with nonlinear frequency conversion processes like high-harmonic generation. The different focusing properties of the fundamental and harmonic frequencies allow for an efficient separation of these components. Consequently, the transmission of high-harmonic generation beamlines can be increased to more than 80% and this approach can be suitable for applications requiring high photon flux. A plasma lens capable of focusing broadband extreme-ultraviolet attosecond pulses is demonstrated.
{"title":"Plasma lens for focusing attosecond pulses","authors":"Evaldas Svirplys, Harry Jones, Gregor Loisch, John Thomas, Maryam Huck, Oleg Kornilov, Matthew James Garland, Jonathan C. Wood, Marc J. J. Vrakking, Jens Osterhoff, Bernd Schütte","doi":"10.1038/s41566-025-01794-y","DOIUrl":"10.1038/s41566-025-01794-y","url":null,"abstract":"Broadband optical pulses with attosecond to femtosecond durations provide unique opportunities for studies of time-resolved electron dynamics. However, focusing these pulses—typically ranging from the vacuum ultraviolet to the soft-X-ray region—remains challenging. Conventional refractive lenses are not suitable owing to large dispersion and strong absorption, whereas reflective optics do not suffer from these issues but have high losses. Here we demonstrate a tunable hydrogen plasma lens to focus broadband extreme-ultraviolet attosecond pulses with energies of around 20 eV and 80 eV. Simulation results suggest that the stretching of attosecond pulses is negligible, and temporal compression is possible when atto-chirp is included. A key advantage of the plasma lens is its compatibility with nonlinear frequency conversion processes like high-harmonic generation. The different focusing properties of the fundamental and harmonic frequencies allow for an efficient separation of these components. Consequently, the transmission of high-harmonic generation beamlines can be increased to more than 80% and this approach can be suitable for applications requiring high photon flux. A plasma lens capable of focusing broadband extreme-ultraviolet attosecond pulses is demonstrated.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"20 2","pages":"151-155"},"PeriodicalIF":32.9,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01794-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01789-9
Sai Kanth Dacha, Yun Zhao, Karl J. McNulty, Gaurang R. Bhatt, Michal Lipson, Alexander L. Gaeta
Field-deployable integrated photonic devices co-packaged with electronics will enable important applications such as optical interconnects, quantum information processing, precision measurements, spectroscopy and microwave generation. Significant progress has been made over the past two decades on increasing the functional complexity of photonic chips. However, a critical challenge that remains is the lack of scalable techniques to overcome thermal perturbations arising from the environment and co-packaged electronics. Here we demonstrate a fully integrated scheme to monitor and stabilize the temperature of a high-Q microresonator on a Si-based chip, which can serve as a photonic frequency reference. Our approach relies on a thin-film metallic resistor placed directly above the microcavity, acting as an integrated resistance thermometer, enabling unique mapping of the cavity’s absolute resonance wavelength to the thermometer’s electrical resistance. Following a one-time calibration, the microresonator can be accurately and repeatably tuned to any desired absolute resonance wavelength using thermometry alone with a root-mean-squared wavelength error of <0.8 pm over a time span of days. We frequency-lock a distributed feedback laser to the microresonator and demonstrate a 48× reduction in its frequency drift, resulting in its centre wavelength staying within ±0.5 pm of the mean over a duration of 50 h in the presence of substantial ambient fluctuations, outperforming many commercial distributed feedback and wavelength-locker-based laser systems. Finally, we stabilize a soliton mode-locked Kerr comb without the need for photodetection, paving the way for Kerr-comb-based photonic devices that can potentially operate in the desired mode-locked state indefinitely. Integrating a thin-film resistance thermometer above a high-Q SiN microresonator enables local temperature monitoring and active stabilization of its resonance wavelength. The emission wavelength of a distributed feedback laser locked to the microresonator fluctuates within 0.5 pm over a period of 50 h.
{"title":"Frequency-stable nanophotonic microcavities via integrated thermometry","authors":"Sai Kanth Dacha, Yun Zhao, Karl J. McNulty, Gaurang R. Bhatt, Michal Lipson, Alexander L. Gaeta","doi":"10.1038/s41566-025-01789-9","DOIUrl":"10.1038/s41566-025-01789-9","url":null,"abstract":"Field-deployable integrated photonic devices co-packaged with electronics will enable important applications such as optical interconnects, quantum information processing, precision measurements, spectroscopy and microwave generation. Significant progress has been made over the past two decades on increasing the functional complexity of photonic chips. However, a critical challenge that remains is the lack of scalable techniques to overcome thermal perturbations arising from the environment and co-packaged electronics. Here we demonstrate a fully integrated scheme to monitor and stabilize the temperature of a high-Q microresonator on a Si-based chip, which can serve as a photonic frequency reference. Our approach relies on a thin-film metallic resistor placed directly above the microcavity, acting as an integrated resistance thermometer, enabling unique mapping of the cavity’s absolute resonance wavelength to the thermometer’s electrical resistance. Following a one-time calibration, the microresonator can be accurately and repeatably tuned to any desired absolute resonance wavelength using thermometry alone with a root-mean-squared wavelength error of <0.8 pm over a time span of days. We frequency-lock a distributed feedback laser to the microresonator and demonstrate a 48× reduction in its frequency drift, resulting in its centre wavelength staying within ±0.5 pm of the mean over a duration of 50 h in the presence of substantial ambient fluctuations, outperforming many commercial distributed feedback and wavelength-locker-based laser systems. Finally, we stabilize a soliton mode-locked Kerr comb without the need for photodetection, paving the way for Kerr-comb-based photonic devices that can potentially operate in the desired mode-locked state indefinitely. Integrating a thin-film resistance thermometer above a high-Q SiN microresonator enables local temperature monitoring and active stabilization of its resonance wavelength. The emission wavelength of a distributed feedback laser locked to the microresonator fluctuates within 0.5 pm over a period of 50 h.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"20 1","pages":"71-78"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01789-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145427670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01777-z
Eran Lustig, Melissa A. Guidry, Daniil M. Lukin, Shanhui Fan, Jelena Vučković
The study of coupled networks with parametric amplification of vacuum fluctuations has garnered increasing interest due to its intricate physics and potential applications. In these systems, parametric interactions lead to beam-splitter coupling and two-mode squeezing, creating quadrature-dependent dynamics. These systems can be modelled as bosonic networks, arrays or lattices, exhibiting exotic effects such as unidirectional amplification and non-Hermitian chiral transport that influence multimode squeezing. However, exploring and controlling these network dynamics experimentally in all-optical systems remains challenging. Recent advances in integrated nonlinear microresonators, known as Kerr microcombs, have enabled the generation and control of broadband high-repetition pulses on microchips. Kerr microcombs exhibit intriguing nonlinear dynamics where coherent photons occupy discrete spectral lines, leading to multimode squeezed vacuum states. Here we explore the lattice dynamics of vacuum fluctuations driven by dissipative Kerr microcombs. We design a photonic chip on which a spontaneously emergent pair of pulses creates extended multimode states of parametrically amplified vacuum fluctuations. These states exhibit oscillatory dynamics, with implications for squeezing and secondary comb formation. By employing integrated micro-heaters, we tune the vacuum fluctuations to eliminate the oscillations, establishing a fundamental connection between non-Hermitian lattice symmetries and Kerr combs, and paving the way for exotic quadrature-dependent optical networks with broad implications for quantum and classical photonic technologies. The quantum noise of Kerr combs is found to exhibit oscillatory lattice dynamics through state transitions, with implications for squeezing and comb formation.
{"title":"Quadrature-dependent lattice dynamics of dissipative microcombs","authors":"Eran Lustig, Melissa A. Guidry, Daniil M. Lukin, Shanhui Fan, Jelena Vučković","doi":"10.1038/s41566-025-01777-z","DOIUrl":"10.1038/s41566-025-01777-z","url":null,"abstract":"The study of coupled networks with parametric amplification of vacuum fluctuations has garnered increasing interest due to its intricate physics and potential applications. In these systems, parametric interactions lead to beam-splitter coupling and two-mode squeezing, creating quadrature-dependent dynamics. These systems can be modelled as bosonic networks, arrays or lattices, exhibiting exotic effects such as unidirectional amplification and non-Hermitian chiral transport that influence multimode squeezing. However, exploring and controlling these network dynamics experimentally in all-optical systems remains challenging. Recent advances in integrated nonlinear microresonators, known as Kerr microcombs, have enabled the generation and control of broadband high-repetition pulses on microchips. Kerr microcombs exhibit intriguing nonlinear dynamics where coherent photons occupy discrete spectral lines, leading to multimode squeezed vacuum states. Here we explore the lattice dynamics of vacuum fluctuations driven by dissipative Kerr microcombs. We design a photonic chip on which a spontaneously emergent pair of pulses creates extended multimode states of parametrically amplified vacuum fluctuations. These states exhibit oscillatory dynamics, with implications for squeezing and secondary comb formation. By employing integrated micro-heaters, we tune the vacuum fluctuations to eliminate the oscillations, establishing a fundamental connection between non-Hermitian lattice symmetries and Kerr combs, and paving the way for exotic quadrature-dependent optical networks with broad implications for quantum and classical photonic technologies. The quantum noise of Kerr combs is found to exhibit oscillatory lattice dynamics through state transitions, with implications for squeezing and comb formation.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1247-1254"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145427668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01759-1
Vincenzo Pecunia, Thomas D. Anthopoulos, Ardalan Armin, Benjamin Bouthinon, Mario Caironi, Andres Castellanos-Gomez, Yongsheng Chen, Kilwon Cho, Charlotte Clegg, Xiaosheng Fang, Peter Fendel, Boyd Fowler, Gerwin Gelinck, Heinrich Gottlob, Philippe Guyot-Sionnest, Rob Hannebauer, Gerardo Hernandez-Sosa, Mark C. Hersam, Lionel Hirsch, Johnny C. Ho, Furkan H. Isikgor, Jérôme Joimel, Hyun Jae Kim, Gerasimos Konstantatos, John Labram, Max C. Lemme, Karl Leo, Emmanuel Lhuillier, Elefterios Lidorikis, Maria A. Loi, Pawel E. Malinowski, Patrick Merken, Thomas Mueller, Bahareh Nasrollahi, Dario Natali, Tse Nga Ng, Thuc-Quyen Nguyen, Sung Kyu Park, Lian-Mao Peng, Paolo Samorì, Edward H. Sargent, Liang Shen, Sanshiro Shishido, Ivan Shorubalko, Prashant Sonar, Samuel D. Stranks, Sandro F. Tedde, Koen Vandewal, Marc Verhaegen, Sumeet Walia, Feng Yan, Tomoyuki Yokota, Fujun Zhang
Photodetector technologies based on emerging semiconductors—for example, organic semiconductors, halide perovskites, quantum dots, low-dimensional semiconductors and metal oxides—hold considerable promise for next-generation optoelectronics. However, the breadth and multidisciplinarity of this field, alongside its diverse range of applications, have resulted in inconsistent performance characterization and reporting practices, hindering the effective benchmarking of these technologies. Here we present a consensus among researchers from academia and industry on accurately capturing the key performance metrics of photodetectors based on emerging semiconductors and utilizing the photoelectric effect. We analyse their underlying assumptions, discuss common misunderstandings, and provide guidelines for accurate characterization and reporting. Additionally, we discuss the benchmarking of these photodetector technologies with respect to diverse applications. We expect that these comprehensive guidelines for characterization, reporting and benchmarking will accelerate and streamline further advancements in the field, propelling emerging photodetector technologies towards their full potential. This Consensus Statement discusses common misunderstandings about photodetector performance characterization and reporting, and offers recommendations for standardized practices.
{"title":"Guidelines for accurate evaluation of photodetectors based on emerging semiconductor technologies","authors":"Vincenzo Pecunia, Thomas D. Anthopoulos, Ardalan Armin, Benjamin Bouthinon, Mario Caironi, Andres Castellanos-Gomez, Yongsheng Chen, Kilwon Cho, Charlotte Clegg, Xiaosheng Fang, Peter Fendel, Boyd Fowler, Gerwin Gelinck, Heinrich Gottlob, Philippe Guyot-Sionnest, Rob Hannebauer, Gerardo Hernandez-Sosa, Mark C. Hersam, Lionel Hirsch, Johnny C. Ho, Furkan H. Isikgor, Jérôme Joimel, Hyun Jae Kim, Gerasimos Konstantatos, John Labram, Max C. Lemme, Karl Leo, Emmanuel Lhuillier, Elefterios Lidorikis, Maria A. Loi, Pawel E. Malinowski, Patrick Merken, Thomas Mueller, Bahareh Nasrollahi, Dario Natali, Tse Nga Ng, Thuc-Quyen Nguyen, Sung Kyu Park, Lian-Mao Peng, Paolo Samorì, Edward H. Sargent, Liang Shen, Sanshiro Shishido, Ivan Shorubalko, Prashant Sonar, Samuel D. Stranks, Sandro F. Tedde, Koen Vandewal, Marc Verhaegen, Sumeet Walia, Feng Yan, Tomoyuki Yokota, Fujun Zhang","doi":"10.1038/s41566-025-01759-1","DOIUrl":"10.1038/s41566-025-01759-1","url":null,"abstract":"Photodetector technologies based on emerging semiconductors—for example, organic semiconductors, halide perovskites, quantum dots, low-dimensional semiconductors and metal oxides—hold considerable promise for next-generation optoelectronics. However, the breadth and multidisciplinarity of this field, alongside its diverse range of applications, have resulted in inconsistent performance characterization and reporting practices, hindering the effective benchmarking of these technologies. Here we present a consensus among researchers from academia and industry on accurately capturing the key performance metrics of photodetectors based on emerging semiconductors and utilizing the photoelectric effect. We analyse their underlying assumptions, discuss common misunderstandings, and provide guidelines for accurate characterization and reporting. Additionally, we discuss the benchmarking of these photodetector technologies with respect to diverse applications. We expect that these comprehensive guidelines for characterization, reporting and benchmarking will accelerate and streamline further advancements in the field, propelling emerging photodetector technologies towards their full potential. This Consensus Statement discusses common misunderstandings about photodetector performance characterization and reporting, and offers recommendations for standardized practices.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1178-1188"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01759-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41566-025-01796-w
Characterizing and reporting photodetector performance demands common standards to ensure rigorous, reproducible and comparable practices.
描述和报告光电探测器的性能需要共同的标准，以确保严格、可重复和可比较的做法。
{"title":"Setting the standard for photodetectors","authors":"","doi":"10.1038/s41566-025-01796-w","DOIUrl":"10.1038/s41566-025-01796-w","url":null,"abstract":"Characterizing and reporting photodetector performance demands common standards to ensure rigorous, reproducible and comparable practices.","PeriodicalId":18926,"journal":{"name":"Nature Photonics","volume":"19 11","pages":"1157-1157"},"PeriodicalIF":32.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41566-025-01796-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145434508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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