首页 > 最新文献

Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)最新文献

英文 中文
A 20 bit 25 kHz delta sigma A/D converter utilizing frequency-shaped chopper stabilization scheme 采用频率型斩波稳定方案的20位25khz δ σ A/D转换器
C. B. Wang
A 20 bit delta sigma A/D converter is implemented in a 0.6 /spl mu/m CMOS process with a single 5 V supply. It provides a 25 kHz data rate for high speed DC measurement while maintaining good performance required by accurate DC measurement such as noise, linearity and drift. The front-end programmable gain amplifier allows the users to optimize their system with different ranges of input level. Offset and finite gain compensation technique is used in the PGA section to reduce offset and improve linearity performance of the amplifier. In the delta sigma converter section, low frequency error reduction is achieved through chopper stabilization technique. A novel frequency-shaped chopper stabilization scheme is used to alleviate the inter-modulation tone which commonly exists due to the use of fix frequency chopping in delta sigma modulators. This A/D converter achieves 2.8 ppm RMS noise and 12 ppm INL at a gain of one.
一个20位δ σ A/D转换器实现在0.6 /spl mu/m CMOS工艺与单个5 V电源。它为高速直流测量提供25 kHz数据速率,同时保持精确直流测量所需的良好性能,如噪声,线性度和漂移。前端可编程增益放大器允许用户优化他们的系统与不同范围的输入电平。在PGA部分采用了偏置和有限增益补偿技术,以减小偏置,提高放大器的线性性能。在δ σ变换器部分,通过斩波稳定技术实现了低频误差的减小。采用了一种新型的频率型斩波稳定方案来缓解由于δ σ调制器使用固定频率斩波而产生的互调音。该A/D转换器在增益为1的情况下实现2.8 ppm的RMS噪声和12 ppm的INL。
{"title":"A 20 bit 25 kHz delta sigma A/D converter utilizing frequency-shaped chopper stabilization scheme","authors":"C. B. Wang","doi":"10.1109/CICC.2000.852607","DOIUrl":"https://doi.org/10.1109/CICC.2000.852607","url":null,"abstract":"A 20 bit delta sigma A/D converter is implemented in a 0.6 /spl mu/m CMOS process with a single 5 V supply. It provides a 25 kHz data rate for high speed DC measurement while maintaining good performance required by accurate DC measurement such as noise, linearity and drift. The front-end programmable gain amplifier allows the users to optimize their system with different ranges of input level. Offset and finite gain compensation technique is used in the PGA section to reduce offset and improve linearity performance of the amplifier. In the delta sigma converter section, low frequency error reduction is achieved through chopper stabilization technique. A novel frequency-shaped chopper stabilization scheme is used to alleviate the inter-modulation tone which commonly exists due to the use of fix frequency chopping in delta sigma modulators. This A/D converter achieves 2.8 ppm RMS noise and 12 ppm INL at a gain of one.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81904134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 50
A 10 GHz CMOS distributed voltage controlled oscillator 一种10ghz CMOS分布式压控振荡器
Hui Wu, A. Hajimiri
A 10 GHz CMOS distributed voltage controlled oscillator (DVCO) is designed in a 0.35 /spl mu/m BiCMOS process technology using only CMOS transistors. The oscillator achieves a tuning range of 12% (9.3 GHz to 10.5 GHz) and a phase noise of -114 dBc/Hz at 1 MHz offset from a carrier frequency of 10.2 GHz. The VCO uses two different simultaneous tuning techniques which allow for a coarse and fine tuning of frequency in a frequency synthesizer. The oscillator provides an output power of -7 dBm without any buffering, drawing 14 mA of DC current from a 2.5 V power supply.
采用0.35 /spl mu/m的BiCMOS工艺设计了一种10 GHz的CMOS分布式压控振荡器(DVCO)。该振荡器的调谐范围为12% (9.3 GHz至10.5 GHz),在10.2 GHz载波频率偏移1mhz时相位噪声为-114 dBc/Hz。VCO使用两种不同的同步调谐技术,允许在频率合成器中对频率进行粗调和微调。该振荡器的输出功率为-7 dBm,无任何缓冲,从2.5 V电源中吸取14 mA的直流电流。
{"title":"A 10 GHz CMOS distributed voltage controlled oscillator","authors":"Hui Wu, A. Hajimiri","doi":"10.1109/CICC.2000.852735","DOIUrl":"https://doi.org/10.1109/CICC.2000.852735","url":null,"abstract":"A 10 GHz CMOS distributed voltage controlled oscillator (DVCO) is designed in a 0.35 /spl mu/m BiCMOS process technology using only CMOS transistors. The oscillator achieves a tuning range of 12% (9.3 GHz to 10.5 GHz) and a phase noise of -114 dBc/Hz at 1 MHz offset from a carrier frequency of 10.2 GHz. The VCO uses two different simultaneous tuning techniques which allow for a coarse and fine tuning of frequency in a frequency synthesizer. The oscillator provides an output power of -7 dBm without any buffering, drawing 14 mA of DC current from a 2.5 V power supply.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74772442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
On intellectual property protection 论知识产权保护
E. Charbon, I. Torunoglu
New design paradigms based on the concept of system-on-chip are gradually replacing printed circuit board centric approaches. This trend is mainly due to two factors: far higher running speeds and greater miniaturization. The new paradigms will accelerate design cycles, which in turn will force designers to reuse existing and acquire new circuits ready to be integrated. Such acceleration will be possible only if highly specialized core authors, integrators, and foundries will be able to efficiently and safely exchange and handle their intellectual property, The field known as intellectual property protection is aimed at limiting all violations to intellectual property rights through appropriate design methodologies, tools, and infringement detection techniques. The paper surveys all published aspects of the intellectual properly protection problem, in the context of concerted VSIA efforts to define new standards and protocols.
基于片上系统概念的新设计范式正在逐渐取代以印刷电路板为中心的方法。这种趋势主要是由于两个因素:更高的运行速度和更大的小型化。新的范例将加速设计周期,这反过来将迫使设计人员重新使用现有的和获得新的电路准备集成。只有高度专业化的核心作者、集成商和代工厂能够有效、安全地交换和处理他们的知识产权,这种加速才有可能实现。知识产权保护领域旨在通过适当的设计方法、工具和侵权检测技术限制所有侵犯知识产权的行为。在协调一致的VSIA努力定义新标准和协议的背景下,本文调查了知识产权保护问题的所有已发表的方面。
{"title":"On intellectual property protection","authors":"E. Charbon, I. Torunoglu","doi":"10.1109/CICC.2000.852721","DOIUrl":"https://doi.org/10.1109/CICC.2000.852721","url":null,"abstract":"New design paradigms based on the concept of system-on-chip are gradually replacing printed circuit board centric approaches. This trend is mainly due to two factors: far higher running speeds and greater miniaturization. The new paradigms will accelerate design cycles, which in turn will force designers to reuse existing and acquire new circuits ready to be integrated. Such acceleration will be possible only if highly specialized core authors, integrators, and foundries will be able to efficiently and safely exchange and handle their intellectual property, The field known as intellectual property protection is aimed at limiting all violations to intellectual property rights through appropriate design methodologies, tools, and infringement detection techniques. The paper surveys all published aspects of the intellectual properly protection problem, in the context of concerted VSIA efforts to define new standards and protocols.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74812681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A new paradigm for very flexible SONET/SDH IP-modules 一个非常灵活的SONET/SDH ip模块的新范例
Thomas Roewer, M. Stadler, M. Thalmann, H. Kaeslin, N. Felber, W. Fichtner
We have implemented a SONET/SDH compatible 155 Mbit/s input block using a new paradigm called programmable intellectual property. The module can be reconfigured by downloading new software versions into the IP embedded processor. This concept offers maximum flexibility for both hard- and soft-IP modules.
我们使用一种称为可编程知识产权的新范式实现了一个与SONET/SDH兼容的155 Mbit/s输入块。该模块可以通过将新软件版本下载到IP嵌入式处理器中来重新配置。这个概念为硬ip和软ip模块提供了最大的灵活性。
{"title":"A new paradigm for very flexible SONET/SDH IP-modules","authors":"Thomas Roewer, M. Stadler, M. Thalmann, H. Kaeslin, N. Felber, W. Fichtner","doi":"10.1109/CICC.2000.852724","DOIUrl":"https://doi.org/10.1109/CICC.2000.852724","url":null,"abstract":"We have implemented a SONET/SDH compatible 155 Mbit/s input block using a new paradigm called programmable intellectual property. The module can be reconfigured by downloading new software versions into the IP embedded processor. This concept offers maximum flexibility for both hard- and soft-IP modules.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80007287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Probabilistic aspects of crosstalk problems in CMOS ICs CMOS集成电路串扰问题的概率方面
Cristinel Ababei, R. Marculescu, V. Sundarajan
In this paper we present a probabilistic approach for analyzing the dependence of crosstalk effects on input pattern correlations. In particular, we show that the effects of coupling between interconnections, in current VLSI ICs, are strongly dependent on the spatio-temporal correlations at the primary inputs. Consequently, a smaller fraction of the total number of nets poses true crosstalk problems and only that fraction should be considered at lower levels of abstraction. The analysis is carried out at the logic-level of abstraction, which provides efficient CPU run time and memory usage.
在本文中,我们提出了一种概率方法来分析串扰效应对输入模式相关性的依赖性。特别是,我们表明,在当前的VLSI集成电路中,互连之间的耦合效应强烈依赖于主输入端的时空相关性。因此,网络总数的一小部分会造成真正的串扰问题,在较低的抽象层次上只应该考虑这一小部分。分析在抽象的逻辑级别执行,这提供了高效的CPU运行时和内存使用。
{"title":"Probabilistic aspects of crosstalk problems in CMOS ICs","authors":"Cristinel Ababei, R. Marculescu, V. Sundarajan","doi":"10.1109/CICC.2000.852630","DOIUrl":"https://doi.org/10.1109/CICC.2000.852630","url":null,"abstract":"In this paper we present a probabilistic approach for analyzing the dependence of crosstalk effects on input pattern correlations. In particular, we show that the effects of coupling between interconnections, in current VLSI ICs, are strongly dependent on the spatio-temporal correlations at the primary inputs. Consequently, a smaller fraction of the total number of nets poses true crosstalk problems and only that fraction should be considered at lower levels of abstraction. The analysis is carried out at the logic-level of abstraction, which provides efficient CPU run time and memory usage.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80380375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A fabrication method for high performance embedded DRAM of 0.18 /spl mu/m generation and beyond 一种0.18 /spl mu/m以上的高性能嵌入式DRAM的制造方法
T. Yoshida, H. Takato, T. Sakurai, K. Kokubun, K. Hiyama, A. Nomachi, Y. Takasu, M. Kishida, H. Ohtsuka, H. Naruse, Y. Morimasa, N. Yanagiya, T. Hashimoto, T. Noguchi, T. Miyamae, N. Iwabuchi, M. Tanaka, J. Kumagai, H. Ishiuchi
A new fabrication method for embedded DRAM of 0.18 /spl mu/m generation is proposed, which realizes full compatibility with logic process such as Co salicide, dual work function gate, small thermal budget and metalization, and introduces Self-aligned Salicide Block (SSB), a new process technology. Fabricated embedded DRAM shows excellent characteristics with respect to both retention time and MOSFET AC/DC performance, promising high performance of SOC (System On a Chip) applications.
提出了一种新的0.18 /spl mu/m代嵌入式DRAM的制造方法,实现了与Co salicide、双功函数门、小热预算和金属化等逻辑工艺的完全兼容,并引入了自对齐salicide Block (SSB)这一新的工艺技术。制造的嵌入式DRAM在保持时间和MOSFET AC/DC性能方面都表现出优异的特性,有望实现高性能的SOC(片上系统)应用。
{"title":"A fabrication method for high performance embedded DRAM of 0.18 /spl mu/m generation and beyond","authors":"T. Yoshida, H. Takato, T. Sakurai, K. Kokubun, K. Hiyama, A. Nomachi, Y. Takasu, M. Kishida, H. Ohtsuka, H. Naruse, Y. Morimasa, N. Yanagiya, T. Hashimoto, T. Noguchi, T. Miyamae, N. Iwabuchi, M. Tanaka, J. Kumagai, H. Ishiuchi","doi":"10.1109/CICC.2000.852618","DOIUrl":"https://doi.org/10.1109/CICC.2000.852618","url":null,"abstract":"A new fabrication method for embedded DRAM of 0.18 /spl mu/m generation is proposed, which realizes full compatibility with logic process such as Co salicide, dual work function gate, small thermal budget and metalization, and introduces Self-aligned Salicide Block (SSB), a new process technology. Fabricated embedded DRAM shows excellent characteristics with respect to both retention time and MOSFET AC/DC performance, promising high performance of SOC (System On a Chip) applications.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84308713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Methodology for I/O cell placement and checking in ASIC designs using area-array power grid 使用区域阵列电网的ASIC设计中的I/O单元放置和检查方法
P. Buffet, Joseph Natonio, R. Proctor, Yu H. Sun, Gulsun Yasar
Electrical rule checking is fundamental to achieve a good I/O cell placement. This paper presents the analysis techniques used to design a robust power-grid structure, the method used to make I/O cell placement guidelines, details of the I/O cell placement process and electrical checking algorithms.
电气规则检查是实现良好I/O单元放置的基础。本文介绍了鲁棒电网结构设计的分析技术、I/O单元布置指南的制定方法、I/O单元布置过程的细节和电气检查算法。
{"title":"Methodology for I/O cell placement and checking in ASIC designs using area-array power grid","authors":"P. Buffet, Joseph Natonio, R. Proctor, Yu H. Sun, Gulsun Yasar","doi":"10.1109/CICC.2000.852632","DOIUrl":"https://doi.org/10.1109/CICC.2000.852632","url":null,"abstract":"Electrical rule checking is fundamental to achieve a good I/O cell placement. This paper presents the analysis techniques used to design a robust power-grid structure, the method used to make I/O cell placement guidelines, details of the I/O cell placement process and electrical checking algorithms.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77224359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
A 1 V 1 mW digital-audio /spl Delta//spl Sigma/ modulator with 88 dB dynamic range using local switch bootstrapping 一个1v 1mw数字音频/spl Delta//spl Sigma/调制器,动态范围为88db,采用本地开关自启动
M. Dessouky, A. Kaiser
A 1 V, 1 mW, 14 bit delta-sigma modulator in a standard CMOS 0.35-/spl mu/m technology is presented. A modified symmetrical bootstrapped switch is used in order to allow rail-to-rail signal switching. A single-loop third-order topology with an oversampling ratio of 100 achieves a dynamic range of 88 dB, a peak SNR of 87 dB and a peak SNDR of 85 dB in a signal bandwidth of 25 kHz.
介绍了一种标准CMOS 0.35-/spl mu/m工艺的1v, 1mw, 14位δ - σ调制器。为了实现轨间信号交换,采用了一种改进的对称自举开关。过采样比为100的单环三阶拓扑在信号带宽为25 kHz的情况下,动态范围为88 dB,峰值信噪比为87 dB,峰值信噪比为85 dB。
{"title":"A 1 V 1 mW digital-audio /spl Delta//spl Sigma/ modulator with 88 dB dynamic range using local switch bootstrapping","authors":"M. Dessouky, A. Kaiser","doi":"10.1109/CICC.2000.852608","DOIUrl":"https://doi.org/10.1109/CICC.2000.852608","url":null,"abstract":"A 1 V, 1 mW, 14 bit delta-sigma modulator in a standard CMOS 0.35-/spl mu/m technology is presented. A modified symmetrical bootstrapped switch is used in order to allow rail-to-rail signal switching. A single-loop third-order topology with an oversampling ratio of 100 achieves a dynamic range of 88 dB, a peak SNR of 87 dB and a peak SNDR of 85 dB in a signal bandwidth of 25 kHz.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76766898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
An analysis of the design processes required for the technology conversion of SoC intellectual property 分析了SoC知识产权技术转换所需的设计过程
J. Nash, P. Smith
The conversion of existing embedded intellectual property (IP) from one automotive compatible mixed mode technology to another is analyzed with respect to the methods and resources required. Conclusions are drawn about advances required in tools and design processes to better aid this task.
分析了现有嵌入式知识产权从一种汽车兼容混合模式技术向另一种汽车兼容混合模式技术转换的方法和所需资源。结论得出了工具和设计过程所需的进步,以更好地帮助这项任务。
{"title":"An analysis of the design processes required for the technology conversion of SoC intellectual property","authors":"J. Nash, P. Smith","doi":"10.1109/CICC.2000.852722","DOIUrl":"https://doi.org/10.1109/CICC.2000.852722","url":null,"abstract":"The conversion of existing embedded intellectual property (IP) from one automotive compatible mixed mode technology to another is analyzed with respect to the methods and resources required. Conclusions are drawn about advances required in tools and design processes to better aid this task.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82799508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Active substrate noise suppression in mixed-signal circuits using on-chip driven guard rings 利用片上驱动保护环抑制混合信号电路中的有源衬底噪声
W. Winkler, F. Herzel
This paper presents an active substrate noise suppression circuit using a pair of concentric guard rings. The outer guard ring senses the substrate noise, which is inverted and amplified by a SiGe circuit. This on-chip amplifier drives the inner guard ring such that efficient noise cancellation is achieved. A ring oscillator is used to sense the residual substrate noise. The measured noise suppression bandwidth is as high as 400 MHz.
本文提出了一种采用一对同心保护环的有源衬底噪声抑制电路。外保护环检测衬底噪声,该噪声由SiGe电路反转和放大。片上放大器驱动内保护环,从而实现有效的噪声消除。环形振荡器用于检测残余衬底噪声。测量到的噪声抑制带宽高达400mhz。
{"title":"Active substrate noise suppression in mixed-signal circuits using on-chip driven guard rings","authors":"W. Winkler, F. Herzel","doi":"10.1109/CICC.2000.852684","DOIUrl":"https://doi.org/10.1109/CICC.2000.852684","url":null,"abstract":"This paper presents an active substrate noise suppression circuit using a pair of concentric guard rings. The outer guard ring senses the substrate noise, which is inverted and amplified by a SiGe circuit. This on-chip amplifier drives the inner guard ring such that efficient noise cancellation is achieved. A ring oscillator is used to sense the residual substrate noise. The measured noise suppression bandwidth is as high as 400 MHz.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82823732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
期刊
Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1