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Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)最新文献

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A 402-output TFT-LCD driver IC with power-controlling function by selecting number of colors 一个402输出的TFT-LCD驱动IC,具有通过选择颜色数量来控制功率的功能
T. Itakura, H. Minamizaki, Tetsuya Saito, Tadashi Kuroda
A 402-output TFT-LCD driver with a power-controlling function by selecting a number of colors to be displayed is described. Power-controlling is realized by turning on and off reference voltage buffers used in DACs to convert RGB digital signals. The buffers must drive 1 to 402 capacitive loads. A phase compensation using a zero formed with the capacitive loads is proposed for the buffers. The analog section consumes 529 /spl mu/A, 182 /spl mu/A, 112 /spl mu/A for 262,144 colors, 4,096 colors, 512 colors, respectively.
描述了一种具有功率控制功能的402输出TFT-LCD驱动器,该驱动器通过选择要显示的颜色数量来控制功率。功率控制是通过打开和关闭参考电压缓冲器来实现的,这些缓冲器用于dac转换RGB数字信号。缓冲器必须驱动1到402电容性负载。提出了一种利用容性负载形成的零相补偿方法。模拟部分分别为262,144个色、4,096个色、512个色消耗529 /spl mu/A、182 /spl mu/A、112 /spl mu/A。
{"title":"A 402-output TFT-LCD driver IC with power-controlling function by selecting number of colors","authors":"T. Itakura, H. Minamizaki, Tetsuya Saito, Tadashi Kuroda","doi":"10.1109/CICC.2002.1012808","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012808","url":null,"abstract":"A 402-output TFT-LCD driver with a power-controlling function by selecting a number of colors to be displayed is described. Power-controlling is realized by turning on and off reference voltage buffers used in DACs to convert RGB digital signals. The buffers must drive 1 to 402 capacitive loads. A phase compensation using a zero formed with the capacitive loads is proposed for the buffers. The analog section consumes 529 /spl mu/A, 182 /spl mu/A, 112 /spl mu/A for 262,144 colors, 4,096 colors, 512 colors, respectively.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114202520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
600 MHz DSP for baseband processing in 3G base stations 用于3G基站基带处理的600mhz DSP
T. Wolf, D. Hocevar, A. Gatherer, Patrick Geremia, Armelle Laine
A 1.2 V 600 MHz 4800 MIPS DSP is a solution for baseband processing in 3G base stations. It is based upon a partitioning of the workload between a DSP core and two flexible forward error correction coprocessors. This allows the DSP to handle a larger number of channels and/or to incorporate advanced algorithms.
1.2 V 600 MHz 4800 MIPS DSP是3G基站基带处理的解决方案。它基于一个DSP核心和两个灵活的前向纠错协处理器之间的工作负载划分。这允许DSP处理更多的通道和/或合并先进的算法。
{"title":"600 MHz DSP for baseband processing in 3G base stations","authors":"T. Wolf, D. Hocevar, A. Gatherer, Patrick Geremia, Armelle Laine","doi":"10.1109/CICC.2002.1012853","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012853","url":null,"abstract":"A 1.2 V 600 MHz 4800 MIPS DSP is a solution for baseband processing in 3G base stations. It is based upon a partitioning of the workload between a DSP core and two flexible forward error correction coprocessors. This allows the DSP to handle a larger number of channels and/or to incorporate advanced algorithms.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114405789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Frequency-independent equivalent circuit model for on-chip spiral inductors 片上螺旋电感器的频率无关等效电路模型
Yu Cao, R. Groves, N. Zamdmer, J. Plouchart, R. Wachnik, Xuejue Huang, T. King, C. Hu
A wide-band, physical and scalable 2-/spl Pi/ equivalent circuit model for on-chip spiral inductors is developed. Using frequency-independent RLC elements, it accurately captures R(f) and L(f) characteristics beyond the self-resonant frequency. This new model is fully compatible with both AC and transient analysis. Verification with measurement data demonstrates excellent scalability for a wide range of inductor configurations.
开发了一种用于片上螺旋电感的宽带、物理和可扩展的2-/spl Pi/等效电路模型。使用与频率无关的RLC元件,它可以准确捕获自谐振频率以外的R(f)和L(f)特性。这个新模型完全兼容交流分析和暂态分析。测量数据验证表明,该器件具有广泛的可扩展性,适用于各种电感配置。
{"title":"Frequency-independent equivalent circuit model for on-chip spiral inductors","authors":"Yu Cao, R. Groves, N. Zamdmer, J. Plouchart, R. Wachnik, Xuejue Huang, T. King, C. Hu","doi":"10.1109/CICC.2002.1012800","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012800","url":null,"abstract":"A wide-band, physical and scalable 2-/spl Pi/ equivalent circuit model for on-chip spiral inductors is developed. Using frequency-independent RLC elements, it accurately captures R(f) and L(f) characteristics beyond the self-resonant frequency. This new model is fully compatible with both AC and transient analysis. Verification with measurement data demonstrates excellent scalability for a wide range of inductor configurations.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124423064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 404
An AI-calibrated IF filter: a yield enhancement method with area and power dissipation reductions 人工智能校准的中频滤波器:一种面积和功耗降低的良率提高方法
M. Murakawa, T. Adachi, Yoshihiro Niino, Y. Kasai, E. Takahashi, K. Takasuka, T. Higuchi
We have developed an LSI for Gm-C IF filters, attaining (1) a 63% reduction in filter area, (2) a 38% reduction in power dissipation, compared to existing commercial products, and (3) a yield rate of 97%. The developed chip is calibrated within a few seconds by a genetic algorithm; an efficient AI technique for difficult optimization problems.
我们开发了一种用于Gm-C中频滤波器的LSI,与现有的商业产品相比,实现了(1)滤波器面积减少63%,(2)功耗降低38%,(3)良率为97%。开发的芯片通过遗传算法在几秒钟内进行校准;一种解决复杂优化问题的高效人工智能技术。
{"title":"An AI-calibrated IF filter: a yield enhancement method with area and power dissipation reductions","authors":"M. Murakawa, T. Adachi, Yoshihiro Niino, Y. Kasai, E. Takahashi, K. Takasuka, T. Higuchi","doi":"10.1109/CICC.2002.1012837","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012837","url":null,"abstract":"We have developed an LSI for Gm-C IF filters, attaining (1) a 63% reduction in filter area, (2) a 38% reduction in power dissipation, compared to existing commercial products, and (3) a yield rate of 97%. The developed chip is calibrated within a few seconds by a genetic algorithm; an efficient AI technique for difficult optimization problems.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124779939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
A 10Gbase Ethernet transceiver (LAN PHY) in a 1.8 V, 0.18 /spl mu/m SOI/CMOS technology 采用1.8 V, 0.18 /spl mu/m SOI/CMOS技术的10Gbase以太网收发器(LAN PHY)
T. Yoshimura, K. Ueda, Jun Takasoh, Yoshiki Wada, T. Oka, H. Kondoh, Osamu Chiba, Yoshihumi Azekawa, M. Ishiwaki
In this paper, we present a 10Gbase Ethernet Transceiver that is suitable for the 10 Gbit Ethernet applications. The 10Gbase Ethernet transceiver LSI, which contains the high-speed interface and the fully integrated IEEE 802.3ae compliant logic, is fabricated in a 0.18 /spl mu/m SOI/CMOS process and dissipates about 2.9 W at 1.8 V supply. By incorporating the monolithic approach and the use of an advanced CMOS process, this 10GE transceiver realizes the low power, low cost and compact solutions for the exponential need of broadband network applications.
在本文中,我们提出了一种适用于10gb以太网应用的10gb以太网收发器。10Gbase以太网收发器LSI包含高速接口和完全集成的IEEE 802.3ae兼容逻辑,采用0.18 /spl mu/m SOI/CMOS工艺制造,在1.8 V电源下功耗约为2.9 W。通过集成单片方法和使用先进的CMOS工艺,该10GE收发器实现了低功耗,低成本和紧凑的解决方案,以满足宽带网络应用的指数需求。
{"title":"A 10Gbase Ethernet transceiver (LAN PHY) in a 1.8 V, 0.18 /spl mu/m SOI/CMOS technology","authors":"T. Yoshimura, K. Ueda, Jun Takasoh, Yoshiki Wada, T. Oka, H. Kondoh, Osamu Chiba, Yoshihumi Azekawa, M. Ishiwaki","doi":"10.1109/CICC.2002.1012840","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012840","url":null,"abstract":"In this paper, we present a 10Gbase Ethernet Transceiver that is suitable for the 10 Gbit Ethernet applications. The 10Gbase Ethernet transceiver LSI, which contains the high-speed interface and the fully integrated IEEE 802.3ae compliant logic, is fabricated in a 0.18 /spl mu/m SOI/CMOS process and dissipates about 2.9 W at 1.8 V supply. By incorporating the monolithic approach and the use of an advanced CMOS process, this 10GE transceiver realizes the low power, low cost and compact solutions for the exponential need of broadband network applications.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122345442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A self-calibration technique for mismatches in image-reject receivers 图像抑制接收机不匹配的自校准技术
Mostafa A. I. Elmala, S. Embabi
This paper presents a modified image-reject Weaver architecture. The design automatically calibrates for phase and gain mismatches that limit the performance of image-reject receivers. On-line or off-line calibrations are possible without using any calibrating tone. An experimental CMOS prototype RF front-end operating at 1.8 GHz achieves an image rejection ratio of 59 dB using on-line calibration. The design was fabricated in a 0.35 /spl mu/m CMOS process and dissipates 160 mW from a 3 V supply during on-line calibration.
提出了一种改进的图像拒绝Weaver体系结构。该设计自动校准相位和增益不匹配,限制了图像抑制接收器的性能。在线或离线校准可以不使用任何校准音调。一个工作在1.8 GHz的实验CMOS原型射频前端通过在线校准实现了59 dB的图像抑制比。该设计以0.35 /spl mu/m CMOS工艺制造,在在线校准期间从3v电源消耗160 mW。
{"title":"A self-calibration technique for mismatches in image-reject receivers","authors":"Mostafa A. I. Elmala, S. Embabi","doi":"10.1109/CICC.2002.1012807","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012807","url":null,"abstract":"This paper presents a modified image-reject Weaver architecture. The design automatically calibrates for phase and gain mismatches that limit the performance of image-reject receivers. On-line or off-line calibrations are possible without using any calibrating tone. An experimental CMOS prototype RF front-end operating at 1.8 GHz achieves an image rejection ratio of 59 dB using on-line calibration. The design was fabricated in a 0.35 /spl mu/m CMOS process and dissipates 160 mW from a 3 V supply during on-line calibration.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122382625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Single-chip FEC codec LSI using iterative CSOC decoder for 10 Gb/s long-haul optical transmission systems 采用迭代CSOC解码器的单片FEC编解码LSI用于10gb /s长途光传输系统
K. Seki, Kousuke Mikami, M. Baba, A. Katayama, H. Tanaka, Y. Hara, M. Kobayashi, N. Okada
This paper describes a 10 Gb/s throughput FEC (Forward Error Correction) codec LSI for long-haul optical transmission systems. The FEC codec uses concatenated Reed-Solomon (255,239) and Convolutional Self Orthogonal Code (CSOC). In order to improve the error correction capability, the FEC code applies iterative CSOC decoding. As a result, the FEC codec provides 8.0 dB net coding gain at 1E-12 corrected bit error rate with 25% redundancy. Due to the low complexity of CSOC, the codec achieves a low power consumption of 3.59 W and a low gate count of 1.32 Mgates using 0.18 /spl mu/m CMOS technology.
介绍了一种用于长距离光传输系统的10gb /s吞吐量FEC (Forward Error Correction)编解码LSI。FEC编解码器使用连接Reed-Solomon(255,239)和卷积自正交码(CSOC)。为了提高FEC码的纠错能力,采用了迭代CSOC译码。因此,FEC编解码器在1E-12校正误码率下提供8.0 dB的净编码增益,冗余率为25%。由于CSOC的低复杂度,该编解码器采用0.18 /spl mu/m CMOS技术实现了3.59 W的低功耗和1.32 Mgates的低门数。
{"title":"Single-chip FEC codec LSI using iterative CSOC decoder for 10 Gb/s long-haul optical transmission systems","authors":"K. Seki, Kousuke Mikami, M. Baba, A. Katayama, H. Tanaka, Y. Hara, M. Kobayashi, N. Okada","doi":"10.1109/CICC.2002.1012787","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012787","url":null,"abstract":"This paper describes a 10 Gb/s throughput FEC (Forward Error Correction) codec LSI for long-haul optical transmission systems. The FEC codec uses concatenated Reed-Solomon (255,239) and Convolutional Self Orthogonal Code (CSOC). In order to improve the error correction capability, the FEC code applies iterative CSOC decoding. As a result, the FEC codec provides 8.0 dB net coding gain at 1E-12 corrected bit error rate with 25% redundancy. Due to the low complexity of CSOC, the codec achieves a low power consumption of 3.59 W and a low gate count of 1.32 Mgates using 0.18 /spl mu/m CMOS technology.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"244 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133745862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A simple 1-transistor capacitor-less memory cell for high performance embedded DRAMs 用于高性能嵌入式dram的简单1晶体管无电容存储单元
P. Fazan, S. Okhonin, M. Nagoga, J. Sallese
A new compact memory architecture is proposed for embedded dynamic random access memory (eDRAM) cells. By exploiting the floating body effect of partially depleted silicon on insulator (SOI) devices, a one-transistor memory cell can be integrated in a pure logic SOI technology without adding any process step. The data retention, device operation principles and reliability make it ideal for high performance eDRAM applications while reducing the cell area by a factor of two.
针对嵌入式动态随机存取存储器(eDRAM)单元,提出了一种新的紧凑存储结构。利用部分贫硅绝缘体(SOI)器件的浮体效应,可以将单晶体管存储单元集成到纯逻辑SOI技术中,而无需增加任何工艺步骤。数据保留,设备操作原理和可靠性使其成为高性能eDRAM应用的理想选择,同时将单元面积减少了两倍。
{"title":"A simple 1-transistor capacitor-less memory cell for high performance embedded DRAMs","authors":"P. Fazan, S. Okhonin, M. Nagoga, J. Sallese","doi":"10.1109/CICC.2002.1012775","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012775","url":null,"abstract":"A new compact memory architecture is proposed for embedded dynamic random access memory (eDRAM) cells. By exploiting the floating body effect of partially depleted silicon on insulator (SOI) devices, a one-transistor memory cell can be integrated in a pure logic SOI technology without adding any process step. The data retention, device operation principles and reliability make it ideal for high performance eDRAM applications while reducing the cell area by a factor of two.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131487984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
A new reduced clock-swing flip-flop: NAND-type keeper flip-flop (NDKFF) 一种新的减小时钟摆动触发器:nand型保持触发器(NDKFF)
M. Tokumasu, H. Fujii, M. Ohta, T. Fuse, A. Kameyama
A new reduced clock-swing flip-flop, named NAND-type Keeper Flip-Flop (NDKFF) is proposed. Compared with other conventional reduced clock-swing flip-flops such as HSFF and RCSFF, NDKFF features a simple configuration, which does not have additional clock drivers or does not have additional nand/or p-wells. Compared with the hybrid-latch flip-flop, 52% of the flip-flop power and 64% of the clocking power are saved in the case of 0.25 /spl mu/m CMOS technology. Moreover CLK-to-Q delay is comparable to that of conventional C2MOS-type master-slave flip-flop.
提出了一种新的减小时钟摆动触发器,称为nand型保持触发器(NDKFF)。与HSFF和RCSFF等传统的减小时钟摆动触发器相比,NDKFF的配置简单,不需要额外的时钟驱动器,也不需要额外的nand/ p井。与混合锁存器触发器相比,在0.25 /spl mu/m CMOS技术下,触发器功耗节省52%,时钟功耗节省64%。此外,CLK-to-Q延迟与传统的c2mos型主从触发器相当。
{"title":"A new reduced clock-swing flip-flop: NAND-type keeper flip-flop (NDKFF)","authors":"M. Tokumasu, H. Fujii, M. Ohta, T. Fuse, A. Kameyama","doi":"10.1109/CICC.2002.1012782","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012782","url":null,"abstract":"A new reduced clock-swing flip-flop, named NAND-type Keeper Flip-Flop (NDKFF) is proposed. Compared with other conventional reduced clock-swing flip-flops such as HSFF and RCSFF, NDKFF features a simple configuration, which does not have additional clock drivers or does not have additional nand/or p-wells. Compared with the hybrid-latch flip-flop, 52% of the flip-flop power and 64% of the clocking power are saved in the case of 0.25 /spl mu/m CMOS technology. Moreover CLK-to-Q delay is comparable to that of conventional C2MOS-type master-slave flip-flop.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134094191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
High dynamic range CMOS image sensor with conditional reset 条件复位的高动态范围CMOS图像传感器
Sung-Hyun Yang, Kyoung-Rok Cho
In this paper, we propose a new image pixel structure for high dynamic range operation, which is based on a multiple sampling scheme and conditional reset circuits. To expand the dynamic range of the sensor, the output of the pixel is sampled multiple times in an integration time. In each sampling, the output of the pixel is compared with a reference voltage, and the result of this comparison activates the conditional reset circuit. The times of conditional reset during the integration contribute to the increase of the dynamic range of the sensor. Dynamic range can be increased to N, where N is the sampling times in an integration time. The test chip was fabricated with a 0.65-/spl mu/m CMOS technology (2-P, 2-M).
本文提出了一种基于多重采样方案和条件复位电路的高动态范围图像像素结构。为了扩大传感器的动态范围,在一个积分时间内对像素的输出进行多次采样。在每次采样中,像素的输出与参考电压进行比较,比较的结果激活条件复位电路。积分过程中条件复位的次数增加了传感器的动态范围。动态范围可以增加到N,其中N是一个积分时间内的采样次数。测试芯片采用0.65-/spl mu/m CMOS工艺(2-P, 2-M)制作。
{"title":"High dynamic range CMOS image sensor with conditional reset","authors":"Sung-Hyun Yang, Kyoung-Rok Cho","doi":"10.1109/CICC.2002.1012810","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012810","url":null,"abstract":"In this paper, we propose a new image pixel structure for high dynamic range operation, which is based on a multiple sampling scheme and conditional reset circuits. To expand the dynamic range of the sensor, the output of the pixel is sampled multiple times in an integration time. In each sampling, the output of the pixel is compared with a reference voltage, and the result of this comparison activates the conditional reset circuit. The times of conditional reset during the integration contribute to the increase of the dynamic range of the sensor. Dynamic range can be increased to N, where N is the sampling times in an integration time. The test chip was fabricated with a 0.65-/spl mu/m CMOS technology (2-P, 2-M).","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133247807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
期刊
Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)
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