Api Warsono, Diana-Stephany Fernandez Rodas, J. Reche, Anaïs De Lehelle D'Affroux, Sébastien Berard Bergery
First, Grayscale I-Line lithography process developed in CEA-Leti allows to manufacture a variety of 3D patterns based on the well-known photolithography technology. Grayscale photolithography is an innovative and alternative approach to create 3D patterns such as microlenses for example. Exposure of a low contrast resist at different doses results in different thicknesses in the resist film. The variation of the intrinsic dose is obtained by using a binary mask that has different chromium densities, thus modulating the exposure intensity on the resist surface1. Secondly, the NanoImprint Lithography (NIL) is a technology capable of reproducing a wide morphological range. NIL is increasingly requested for the reproduction of 3D patterns. Initially, standard NIL process uses a hard master usually composed of Si or SiO2. The proposed work validates the quality of the replication by the NanoImprint process of a "resist master" created by grayscale lithography. This approach facilitates the manufacturing process of a master by avoiding the etching step and offering a cost-effective solution. The measurement of several types of 3D patterns are performed before and after replication during this study. CD preservation is evaluated for 32 types of microlenses simultaneously replicated. Finally, the combination of the Grayscale and NanoImprint technologies allows to considerably increasing the printing possibilities. By freeing the difficulties of multiple patterns morphology conservation during the etching, the replication of a resist master permits other potential applications, particularly in the optical field.
{"title":"Replication of 3D patterns from a grayscale resist master by nanoimprint process","authors":"Api Warsono, Diana-Stephany Fernandez Rodas, J. Reche, Anaïs De Lehelle D'Affroux, Sébastien Berard Bergery","doi":"10.1117/12.2658384","DOIUrl":"https://doi.org/10.1117/12.2658384","url":null,"abstract":"First, Grayscale I-Line lithography process developed in CEA-Leti allows to manufacture a variety of 3D patterns based on the well-known photolithography technology. Grayscale photolithography is an innovative and alternative approach to create 3D patterns such as microlenses for example. Exposure of a low contrast resist at different doses results in different thicknesses in the resist film. The variation of the intrinsic dose is obtained by using a binary mask that has different chromium densities, thus modulating the exposure intensity on the resist surface1. Secondly, the NanoImprint Lithography (NIL) is a technology capable of reproducing a wide morphological range. NIL is increasingly requested for the reproduction of 3D patterns. Initially, standard NIL process uses a hard master usually composed of Si or SiO2. The proposed work validates the quality of the replication by the NanoImprint process of a \"resist master\" created by grayscale lithography. This approach facilitates the manufacturing process of a master by avoiding the etching step and offering a cost-effective solution. The measurement of several types of 3D patterns are performed before and after replication during this study. CD preservation is evaluated for 32 types of microlenses simultaneously replicated. Finally, the combination of the Grayscale and NanoImprint technologies allows to considerably increasing the printing possibilities. By freeing the difficulties of multiple patterns morphology conservation during the etching, the replication of a resist master permits other potential applications, particularly in the optical field.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132086530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Wolf, M. Ferstl, A. Voigt, S. Grützner, A. Schleunitz, G. Grützner
We propose a novel approach of combined patterning technologies to manufacture individualized micro-optical components as required for the integration of system-level optical packaging, e.g. for coupling light into on-chip level waveguides. The presented work consists of an innovative combination of inkjet printing of available optical polymers onto a prepatterned substrate and UV-replication which enables the manufacturing processes for tailor-made polymeric hybrid and biconvex micro-optical components. For this, inkjet printing of the optical polymers InkOrmo or InkEpo is used as a dispensing technique for additive manufacturing. The ink is printed into designated cavities on a patterned substrate that shows either diffractive or refractive features. After UV-induced polymerization, the cured component is separated from the soft mold substrate. This results in a combination of either a diffractive and a refractive element or two convex refractive elements in one monolithic component. The refractive part on top is self-organized by the surface energy and the shape is adjusted with the amount of dispensed ink enabling to tune the refractive power of the lens. The diffractive structure or convex shape on the opposite side of the lens is obtained by replicating the shape of the prepatterned substrate. Such advanced micro-optic components allow in principle a higher degree of system integration and thus further system miniaturization by e.g. substituting a multi lens system with a single hybrid lens. This novel manufacturing concept is composed to cost-effectively implement design requirements, making tailor-made diffractive-refractive lenses easily accessible e.g. to the MEMS/MOEMS community.
{"title":"Novel approach of patterning technologies enabling monolithic micro-optical components","authors":"J. Wolf, M. Ferstl, A. Voigt, S. Grützner, A. Schleunitz, G. Grützner","doi":"10.1117/12.2661529","DOIUrl":"https://doi.org/10.1117/12.2661529","url":null,"abstract":"We propose a novel approach of combined patterning technologies to manufacture individualized micro-optical components as required for the integration of system-level optical packaging, e.g. for coupling light into on-chip level waveguides. The presented work consists of an innovative combination of inkjet printing of available optical polymers onto a prepatterned substrate and UV-replication which enables the manufacturing processes for tailor-made polymeric hybrid and biconvex micro-optical components. For this, inkjet printing of the optical polymers InkOrmo or InkEpo is used as a dispensing technique for additive manufacturing. The ink is printed into designated cavities on a patterned substrate that shows either diffractive or refractive features. After UV-induced polymerization, the cured component is separated from the soft mold substrate. This results in a combination of either a diffractive and a refractive element or two convex refractive elements in one monolithic component. The refractive part on top is self-organized by the surface energy and the shape is adjusted with the amount of dispensed ink enabling to tune the refractive power of the lens. The diffractive structure or convex shape on the opposite side of the lens is obtained by replicating the shape of the prepatterned substrate. Such advanced micro-optic components allow in principle a higher degree of system integration and thus further system miniaturization by e.g. substituting a multi lens system with a single hybrid lens. This novel manufacturing concept is composed to cost-effectively implement design requirements, making tailor-made diffractive-refractive lenses easily accessible e.g. to the MEMS/MOEMS community.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132895337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Turnquist, N. Kofuji, J. Sebastian, Z. Liu, H. Kou, H. Fukuda, Y. Tomczak, Y. Sun, D. Piumi, D. D. Roest
The impact of both intrinsic and plasma-induced stress of a TiN hardmask on line wiggling was investigated via etching of p-SiOCH with 28 nm pitch, line and space (L/S) EUV resist patterning. Experimental stacks included crystalline PVD TiN with an intrinsic stress of +0.1 GPa and several PEALD TiN films with varying crystallinity and intrinsic stresses ranging from -3.6 GPa (compressive) to +0.2 GPa (tensile). Results confirmed that reduction of intrinsic TiN stress can prevent wiggling1 when the mask is not exposed to plasma during process flow. However, when TiN is exposed to plasma as in a typical back end of line (BEOL) process2-3, compressive stress increased in all films and resulted in wiggling even in the patterned PVD TiN sample with low intrinsic stress. This global increase in compressive stress due to plasma exposure did not correlate with intrinsic stress values, therefore, this work suggests a greater focus should be placed on plasma-induced stress to avoid line wiggling when selecting a TiN film. Further investigation found that increased surface roughness of the TiN mask can decrease the risk of wiggling, and that surface roughness is influenced by p-SiOCH etch selectivity, indicating mask surface roughness should also be considered when evaluating line wiggling in BEOL, p-SiOCH etching.
{"title":"Evaluation of TiN hardmask films to prevent line wiggling due to plasma-induced film stress","authors":"A. Turnquist, N. Kofuji, J. Sebastian, Z. Liu, H. Kou, H. Fukuda, Y. Tomczak, Y. Sun, D. Piumi, D. D. Roest","doi":"10.1117/12.2661307","DOIUrl":"https://doi.org/10.1117/12.2661307","url":null,"abstract":"The impact of both intrinsic and plasma-induced stress of a TiN hardmask on line wiggling was investigated via etching of p-SiOCH with 28 nm pitch, line and space (L/S) EUV resist patterning. Experimental stacks included crystalline PVD TiN with an intrinsic stress of +0.1 GPa and several PEALD TiN films with varying crystallinity and intrinsic stresses ranging from -3.6 GPa (compressive) to +0.2 GPa (tensile). Results confirmed that reduction of intrinsic TiN stress can prevent wiggling1 when the mask is not exposed to plasma during process flow. However, when TiN is exposed to plasma as in a typical back end of line (BEOL) process2-3, compressive stress increased in all films and resulted in wiggling even in the patterned PVD TiN sample with low intrinsic stress. This global increase in compressive stress due to plasma exposure did not correlate with intrinsic stress values, therefore, this work suggests a greater focus should be placed on plasma-induced stress to avoid line wiggling when selecting a TiN film. Further investigation found that increased surface roughness of the TiN mask can decrease the risk of wiggling, and that surface roughness is influenced by p-SiOCH etch selectivity, indicating mask surface roughness should also be considered when evaluating line wiggling in BEOL, p-SiOCH etching.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131688292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Linn, S. Fasold, R. Galler, S. Kuefner, I. Stolberg, M. Suelzle, U. Weidenmueller
In emerging optical applications, curvilinear features increase lithography complexity, which leads to long e-beam write times. Multi beam mask writers offer a solution for high-end masks where curvilinear features are predominant. For mid-range masks and emerging optical applications especially variable shaped beam systems still offer advantages. The challenge for optical applications is to expose large-scale non-Manhattan layouts such as slanted gratings, circle arrays, or curved geometrical structures with high fidelity in an efficient way. For arbitrary curved structures, including 3D, a novel shot count optimized and edge roughness aware approximation (JES-approximation) approach by ePLACE data preparation software package (Vistec Electron Beam GmbH, Germany) is applied. In contrast to common fracturing, both throughput and pattern fidelity in optical applications are highly increased. The optical quality by means of high sensitive haze measurements of diffractive axicons is proven. For repetitive structures such as slanted gratings or circle arrays the cell projection (CP) option is the solution of choice, but CP is also effective for arbitrarily curved gratings. Key enabler is the data preparation software ePLACE where cell dose values are calculated to meet the target layout contours precisely. Both JES-approximation as well as cell projection with target contour calculation are powerful tools for an efficient data preparation and final exposure of non-Manhattan layouts.
在新兴的光学应用中，曲线特性增加了光刻的复杂性，导致电子束写入时间长。多波束掩模编写者为曲线特征占主导地位的高端掩模提供了解决方案。对于中档掩模和新兴光学应用，特别是可变形状光束系统仍然具有优势。光学应用面临的挑战是如何以高效的方式暴露大规模的非曼哈顿布局，如倾斜光栅、圆形阵列或高保真的弯曲几何结构。对于任意弯曲结构，包括3D，采用了ePLACE数据准备软件包(Vistec Electron Beam GmbH, Germany)的一种新的射击计数优化和边缘粗糙度感知近似(je -近似)方法。与普通压裂相比，光学应用中的通量和模式保真度都大大提高。通过对衍射轴的高灵敏度雾度测量，证明了衍射轴的光学质量。对于重复结构，如倾斜光栅或圆形阵列，单元投影(CP)选项是首选的解决方案，但CP也适用于任意弯曲的光栅。关键使能器是数据准备软件ePLACE，其中计算细胞剂量值以精确地满足目标布局轮廓。jes逼近和带目标轮廓计算的单元投影都是有效的数据准备和非曼哈顿布局最终曝光的强大工具。
{"title":"Efficient exposure of non-Manhattan layouts using Vistec’s shaped beam systems","authors":"E. Linn, S. Fasold, R. Galler, S. Kuefner, I. Stolberg, M. Suelzle, U. Weidenmueller","doi":"10.1117/12.2656928","DOIUrl":"https://doi.org/10.1117/12.2656928","url":null,"abstract":"In emerging optical applications, curvilinear features increase lithography complexity, which leads to long e-beam write times. Multi beam mask writers offer a solution for high-end masks where curvilinear features are predominant. For mid-range masks and emerging optical applications especially variable shaped beam systems still offer advantages. The challenge for optical applications is to expose large-scale non-Manhattan layouts such as slanted gratings, circle arrays, or curved geometrical structures with high fidelity in an efficient way. For arbitrary curved structures, including 3D, a novel shot count optimized and edge roughness aware approximation (JES-approximation) approach by ePLACE data preparation software package (Vistec Electron Beam GmbH, Germany) is applied. In contrast to common fracturing, both throughput and pattern fidelity in optical applications are highly increased. The optical quality by means of high sensitive haze measurements of diffractive axicons is proven. For repetitive structures such as slanted gratings or circle arrays the cell projection (CP) option is the solution of choice, but CP is also effective for arbitrarily curved gratings. Key enabler is the data preparation software ePLACE where cell dose values are calculated to meet the target layout contours precisely. Both JES-approximation as well as cell projection with target contour calculation are powerful tools for an efficient data preparation and final exposure of non-Manhattan layouts.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124459241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Laulagnet, Jacques-Alexandre Dallery, L. Pain, M. May, Béatrice Hémard, Franck Garlet, I. Servin, C. Sabbione
Electron Beam Direct Write (EBDW or E-Beam) Lithography is a worldwide reference technology used in laboratories, universities and pilot line facilities for Research and Developments. Due to its low writing speed, E-Beam direct write has never been recognized as an acceptable industrial solution, exception made for optical mask manufacturing. Nevertheless, its natural high-resolution capability allows low-cost patterning of advanced or innovative devices ahead of their high-volume manufacturing ramp-up. Thanks to its full versatility with almost all type of chemically amplified resists, EBDW is a perfect complementary solution to optical lithography. This paper demonstrates the compatibility of EBDW lithography with advanced Negative Tone Development (NTD) resist and the possibility to set-up an hybrid E-Beam/193i lithography process flow with high performances in terms of resolution and mix & match overlay. This high-end lithography strategy alliance offers flexibility and cost advantages for device development R&D but also powerful possibilities for specific applications such circuit encryption as discussed at the end of this work-study.
{"title":"E-beam direct write lithography: the versatile ally of optical lithography","authors":"F. Laulagnet, Jacques-Alexandre Dallery, L. Pain, M. May, Béatrice Hémard, Franck Garlet, I. Servin, C. Sabbione","doi":"10.1117/12.2658273","DOIUrl":"https://doi.org/10.1117/12.2658273","url":null,"abstract":"Electron Beam Direct Write (EBDW or E-Beam) Lithography is a worldwide reference technology used in laboratories, universities and pilot line facilities for Research and Developments. Due to its low writing speed, E-Beam direct write has never been recognized as an acceptable industrial solution, exception made for optical mask manufacturing. Nevertheless, its natural high-resolution capability allows low-cost patterning of advanced or innovative devices ahead of their high-volume manufacturing ramp-up. Thanks to its full versatility with almost all type of chemically amplified resists, EBDW is a perfect complementary solution to optical lithography. This paper demonstrates the compatibility of EBDW lithography with advanced Negative Tone Development (NTD) resist and the possibility to set-up an hybrid E-Beam/193i lithography process flow with high performances in terms of resolution and mix & match overlay. This high-end lithography strategy alliance offers flexibility and cost advantages for device development R&D but also powerful possibilities for specific applications such circuit encryption as discussed at the end of this work-study.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124942307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhengning Li, X. Ke, Jia Song, Fengmei Li, Shi-liang Ji, H. Zhang
Etching selectivity is the most critical factor in etch process, in which it can reduce non-etching materials loss while removing target materials. Silicon-germanium (SiGe) and silicon etch characteristic are similar, so the method to distinguish them during etching is a popular research topic. CF4-based mixed gases were applied for the SiGe to Silicon offline etch selectivity study. In terms of DoE (Design of Experiment) method, 5 process parameters, like CF4 gas, O2 gas, RF (resonant frequency) power and chamber pressure, were chosen to compose process conditions for SiGe and Si control wafer test. Based on uniform design, 15-run U15(55) design conditions were tested, and then subset selection algorithms was applied in R software to establish linear regression function for the process parameters. The correlation chart and heating map showed that dry plasma energy control was strongly with pressure and power simultaneous tuning direction and helium gas flow had little effect on SiGe-Si selectivity, which offered the tuning suggestion for SiGe-Si selectivity improvement.
蚀刻选择性是蚀刻过程中最关键的因素，它可以在去除目标材料的同时减少非蚀刻材料的损失。硅锗(SiGe)与硅的蚀刻特性相似，因此在蚀刻过程中如何区分它们是一个热门的研究课题。采用基于cf4的混合气体对SiGe对硅的离线蚀刻选择性进行了研究。采用DoE (Design of Experiment)方法，选取CF4气体、O2气体、RF(谐振频率)功率、腔室压力等5个工艺参数组成SiGe和Si控制晶片试验的工艺条件。在均匀设计的基础上，对15次运行的U15(55)设计条件进行测试，然后在R软件中应用子集选择算法建立工艺参数的线性回归函数。相关图和热图显示干等离子体能量控制与压力和功率同步调节方向强烈，氦气流量对SiGe-Si选择性影响不大，为提高SiGe-Si选择性提供了调节建议。
{"title":"Design of experiment for optimal SiGe-Si selectivity","authors":"Zhengning Li, X. Ke, Jia Song, Fengmei Li, Shi-liang Ji, H. Zhang","doi":"10.1117/12.2656866","DOIUrl":"https://doi.org/10.1117/12.2656866","url":null,"abstract":"Etching selectivity is the most critical factor in etch process, in which it can reduce non-etching materials loss while removing target materials. Silicon-germanium (SiGe) and silicon etch characteristic are similar, so the method to distinguish them during etching is a popular research topic. CF4-based mixed gases were applied for the SiGe to Silicon offline etch selectivity study. In terms of DoE (Design of Experiment) method, 5 process parameters, like CF4 gas, O2 gas, RF (resonant frequency) power and chamber pressure, were chosen to compose process conditions for SiGe and Si control wafer test. Based on uniform design, 15-run U15(55) design conditions were tested, and then subset selection algorithms was applied in R software to establish linear regression function for the process parameters. The correlation chart and heating map showed that dry plasma energy control was strongly with pressure and power simultaneous tuning direction and helium gas flow had little effect on SiGe-Si selectivity, which offered the tuning suggestion for SiGe-Si selectivity improvement.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127158822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The IC assembly industry has gone a full circle over the course of 50 years. At the beginning, everything was discretely packaged, but with the introduction of integrated circuits and advancement of lithograph y technologies, we were able to keep putting more into less., Yet the industry is facing challenges in continuing the scaling trend without sacrificing th e economic gain, therefore they turned to the heterogeneous integration, where the different IP blocks on the SOC were, once again, split into several discrete IC chips, thereby completing the circle. How do we enable these physically separated chips to have a performance that is on par with a single SOC? The answer is advanced packaging.
{"title":"Opportunities and challenges of heterogeneous integration: from IC packaging POV","authors":"Jeffery Chiang, Paul Wu","doi":"10.1117/12.2659852","DOIUrl":"https://doi.org/10.1117/12.2659852","url":null,"abstract":"The IC assembly industry has gone a full circle over the course of 50 years. At the beginning, everything was discretely packaged, but with the introduction of integrated circuits and advancement of lithograph y technologies, we were able to keep putting more into less., Yet the industry is facing challenges in continuing the scaling trend without sacrificing th e economic gain, therefore they turned to the heterogeneous integration, where the different IP blocks on the SOC were, once again, split into several discrete IC chips, thereby completing the circle. How do we enable these physically separated chips to have a performance that is on par with a single SOC? The answer is advanced packaging.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127181115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Schuster, G. Ekindorf, A. Voigt, A. Schleunitz, G. Gruetzner
Greyscale lithography for the manufacture of complex 2.5D and freeform microstructures in photoresists receives increasing attention from industry for the fabrication of advanced micro-optical elements. The thus obtained structures serve as master or template for different methods of pattern transfer into materials for final, permanent applications, such as refractive and diffractive lenses, blazed gratings, beam-shapers etc. However, many such applications require large structure heights beyond 100 μm which was not easily accessible until now. We present a novel photoresist, mr-P 22G_XP, enabling greyscale lithography of very deep patterns. Issues limiting the pattern depth caused by the photoresist chemistry were addressed. Greyscale pattern depths of 120 μm were possible with an easily accessible set-up with this prototype, with a well-considered choice of photoresist ingredients, and lithography process adjustments focusing on laser direct writing, with the prospect of even deeper patterns up to 140–150 μm.
{"title":"Pushing deep greyscale lithography beyond 100-µm pattern depth with a novel photoresist","authors":"C. Schuster, G. Ekindorf, A. Voigt, A. Schleunitz, G. Gruetzner","doi":"10.1117/12.2661526","DOIUrl":"https://doi.org/10.1117/12.2661526","url":null,"abstract":"Greyscale lithography for the manufacture of complex 2.5D and freeform microstructures in photoresists receives increasing attention from industry for the fabrication of advanced micro-optical elements. The thus obtained structures serve as master or template for different methods of pattern transfer into materials for final, permanent applications, such as refractive and diffractive lenses, blazed gratings, beam-shapers etc. However, many such applications require large structure heights beyond 100 μm which was not easily accessible until now. We present a novel photoresist, mr-P 22G_XP, enabling greyscale lithography of very deep patterns. Issues limiting the pattern depth caused by the photoresist chemistry were addressed. Greyscale pattern depths of 120 μm were possible with an easily accessible set-up with this prototype, with a well-considered choice of photoresist ingredients, and lithography process adjustments focusing on laser direct writing, with the prospect of even deeper patterns up to 140–150 μm.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126082966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Brown, G. Dawson, E. Jackson, B. Schofield, T. Lada, A. Robinson
Fullerene-based spin-on-carbon enables very high carbon content, and shows very high thermal stability, and etch resistance approaching amorphous carbon. Here we describe the performance of the HM1300 fullerene SOC, including results using high temperature inert atmosphere curing. Ohnishi numbers below 1.44 are achieved (measured by elemental analysis) and etch performance improved over the standard bake. A new high carbon crosslinker, designed to link directly to the fullerene cage, and with a carbon content comparable to the fullerene (significantly higher than the previous crosslinker) is also introduced. The new crosslinker is designed to enhance both etch and thermal stability performance.
{"title":"Ultra-high carbon fullerene-based spin-on-carbon hardmasks","authors":"A. Brown, G. Dawson, E. Jackson, B. Schofield, T. Lada, A. Robinson","doi":"10.1117/12.2658462","DOIUrl":"https://doi.org/10.1117/12.2658462","url":null,"abstract":"Fullerene-based spin-on-carbon enables very high carbon content, and shows very high thermal stability, and etch resistance approaching amorphous carbon. Here we describe the performance of the HM1300 fullerene SOC, including results using high temperature inert atmosphere curing. Ohnishi numbers below 1.44 are achieved (measured by elemental analysis) and etch performance improved over the standard bake. A new high carbon crosslinker, designed to link directly to the fullerene cage, and with a carbon content comparable to the fullerene (significantly higher than the previous crosslinker) is also introduced. The new crosslinker is designed to enhance both etch and thermal stability performance.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114454046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Schleunitz, C. Schuster, A. Voigt, M. Russew, M. Lohse, M. Heinrich, G. Grützner
The ongoing advancement of lithographic manufacturing in micro- and nanopatterning rely on the commercial availability of innovative photoresists, polymers and photopolymers as well as complementary process chemicals: This allows to enhance current micro- and nanofabrication technologies by increasing the overall pattern complexity or general process simplicity. In this contribution, we demonstrate that material innovations have a significant part in enhancing micro- and nanofabrication by outperforming generic photoresists through cross-functionality as it is increasingly required in ever growing pattern complexity (e.g. advanced mix-and-match methods) or when additional material features are set by the final application.
{"title":"Cross-functional photoresists and photopolymers enhancing micro- and nanofabrication","authors":"A. Schleunitz, C. Schuster, A. Voigt, M. Russew, M. Lohse, M. Heinrich, G. Grützner","doi":"10.1117/12.2661531","DOIUrl":"https://doi.org/10.1117/12.2661531","url":null,"abstract":"The ongoing advancement of lithographic manufacturing in micro- and nanopatterning rely on the commercial availability of innovative photoresists, polymers and photopolymers as well as complementary process chemicals: This allows to enhance current micro- and nanofabrication technologies by increasing the overall pattern complexity or general process simplicity. In this contribution, we demonstrate that material innovations have a significant part in enhancing micro- and nanofabrication by outperforming generic photoresists through cross-functionality as it is increasingly required in ever growing pattern complexity (e.g. advanced mix-and-match methods) or when additional material features are set by the final application.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131422824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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