Pub Date : 2017-08-08DOI: 10.7567/ssdm.2017.k-8-05
A. Shukla, M. Goto, K. Nawaoka, Joko Suwardy, S. Miwa, Yoshikazu Suzuki
{"title":"Voltage Controlled Magnetic Anisotropy at Fe 1- x Co x Pd/MgO Interface","authors":"A. Shukla, M. Goto, K. Nawaoka, Joko Suwardy, S. Miwa, Yoshikazu Suzuki","doi":"10.7567/ssdm.2017.k-8-05","DOIUrl":"https://doi.org/10.7567/ssdm.2017.k-8-05","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77195217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/ssdm.2017.e-5-04
T. Mizutani, K. Takeuchi, T. Saraya, M. Kobayashi, T. Hiramoto
{"title":"Lowering Minimum Operation Voltage (V min ) in SRAM Array by Post-Fabrication Self-Improvement of Cell Stability by Multiple Stress Application","authors":"T. Mizutani, K. Takeuchi, T. Saraya, M. Kobayashi, T. Hiramoto","doi":"10.7567/ssdm.2017.e-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2017.e-5-04","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90188709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/SSDM.2017.PS-14-09
M. Noguchi
{"title":"Evaluation of Hall Effect Mobility for SiC MOSFETs with Increasing Nitrogen Implantation into Channel Region","authors":"M. Noguchi","doi":"10.7567/SSDM.2017.PS-14-09","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-14-09","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89825522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/ssdm.2017.o-1-06
K. Kutsuki
Abstract The effect of the surface roughness of trench sidewalls on electrical properties have been investigated for improving channel mobility in 4H-SiC trench MOSFETs. The surface roughness was evaluated by atomic force microscopy (AFM). The characteristics of channel mobility were analyzed based on the mobility model including optical phonon scattering. The results revealed that surface roughness scattering had small contribution to channel mobility, and there was no correlation between the experimental RMS values and surface roughness scattering. On the other hand, it was necessary to pay attention to the surface morphology from the view point of device reliability.
{"title":"Effect of Surface Roughness of Trench Sidewalls on Channel Mobility in 4H-SiC Trench MOSFETs","authors":"K. Kutsuki","doi":"10.7567/ssdm.2017.o-1-06","DOIUrl":"https://doi.org/10.7567/ssdm.2017.o-1-06","url":null,"abstract":"Abstract The effect of the surface roughness of trench sidewalls on electrical properties have been investigated for improving channel mobility in 4H-SiC trench MOSFETs. The surface roughness was evaluated by atomic force microscopy (AFM). The characteristics of channel mobility were analyzed based on the mobility model including optical phonon scattering. The results revealed that surface roughness scattering had small contribution to channel mobility, and there was no correlation between the experimental RMS values and surface roughness scattering. On the other hand, it was necessary to pay attention to the surface morphology from the view point of device reliability.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"50 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91390513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/ssdm.2017.k-3-06
T. Sakaguchi
{"title":"Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs","authors":"T. Sakaguchi","doi":"10.7567/ssdm.2017.k-3-06","DOIUrl":"https://doi.org/10.7567/ssdm.2017.k-3-06","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78721650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/SSDM.2017.PS-13-18
Y. Yoon
{"title":"[No-show]Paramagnetic Property in Two-Dimensional Titanium Carbides via Surface Modifications","authors":"Y. Yoon","doi":"10.7567/SSDM.2017.PS-13-18","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-13-18","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"63 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77609159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-28DOI: 10.7567/SSDM.2017.H-8-03
H. Wang
{"title":"[No-Show]Mid-Infrared Si-photonic Devices Based on 340 nm SOI Platform","authors":"H. Wang","doi":"10.7567/SSDM.2017.H-8-03","DOIUrl":"https://doi.org/10.7567/SSDM.2017.H-8-03","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"246 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75099065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-28DOI: 10.7567/SSDM.2017.E-1-02
K. Maekawa, H. Makiyama, Yoshiki Yamamoto, T. Hasegawa, S. Okanishi, K. Sonoda, H. Shinkawata, T. Yamashita, S. Kamohara, Y. Yamaguchi
{"title":"Comprehensive Analysis of Low-frequency Noise Variability Components in Bulk and FDSOI (SOTB) MOSFETs","authors":"K. Maekawa, H. Makiyama, Yoshiki Yamamoto, T. Hasegawa, S. Okanishi, K. Sonoda, H. Shinkawata, T. Yamashita, S. Kamohara, Y. Yamaguchi","doi":"10.7567/SSDM.2017.E-1-02","DOIUrl":"https://doi.org/10.7567/SSDM.2017.E-1-02","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"96 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80029875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-28DOI: 10.7567/SSDM.2017.A-6-01
M. Shimizu
We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned spin-Hall structure, the cell has the critical switching current (Ic) of 200 μA at 20 nsec for an MTJ size of 50×150 nm 2 . The value is comparable to that for matured STT-MRAM with the similar dimension. By applying a voltage to the MTJ, Ic was modulated due to the voltage-controlled magnetic anisotropy (VCMA) effect and the Ic reduction was 50 μA at -0.8 V. It is concluded that using both the spin Hall effect and the VCMA effect, the VoCSM has a potential of high write-efficiency.
{"title":"Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency","authors":"M. Shimizu","doi":"10.7567/SSDM.2017.A-6-01","DOIUrl":"https://doi.org/10.7567/SSDM.2017.A-6-01","url":null,"abstract":"We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned spin-Hall structure, the cell has the critical switching current (Ic) of 200 μA at 20 nsec for an MTJ size of 50×150 nm 2 . The value is comparable to that for matured STT-MRAM with the similar dimension. By applying a voltage to the MTJ, Ic was modulated due to the voltage-controlled magnetic anisotropy (VCMA) effect and the Ic reduction was 50 μA at -0.8 V. It is concluded that using both the spin Hall effect and the VCMA effect, the VoCSM has a potential of high write-efficiency.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84490814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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