Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492027
U. Spalthoff, J. Scherb, W. Korber, A. Ambrosy, J. Hehmann, D. Ferling, W. Rehm
High speed InP-InGaAs-InP pin photodiode arrays on semi-insulating InP substrate have been realized. Essentially flat frequency response up to 4 GHz has been achieved due to low diode capacitance of 530 fF at -10 volts and low series resistance. After Au/Au thermocompression flip-chip bonding onto silicon motherboards with integrated V-grooves, interconnection lines and Au bumps they have been passively coupled to single mode fibre ribbons. The overall performance demonstrates that the array simultaneously meets advanced requirements for high sensitivity 2.5 Gbit/s receivers as well as for low-cost fibre coupling with passive alignment.
{"title":"Flip-chip-mounted pin-photodiode array for 2.5 Gbit/s-per-channel parallel optical interconnections","authors":"U. Spalthoff, J. Scherb, W. Korber, A. Ambrosy, J. Hehmann, D. Ferling, W. Rehm","doi":"10.1109/ICIPRM.1996.492027","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492027","url":null,"abstract":"High speed InP-InGaAs-InP pin photodiode arrays on semi-insulating InP substrate have been realized. Essentially flat frequency response up to 4 GHz has been achieved due to low diode capacitance of 530 fF at -10 volts and low series resistance. After Au/Au thermocompression flip-chip bonding onto silicon motherboards with integrated V-grooves, interconnection lines and Au bumps they have been passively coupled to single mode fibre ribbons. The overall performance demonstrates that the array simultaneously meets advanced requirements for high sensitivity 2.5 Gbit/s receivers as well as for low-cost fibre coupling with passive alignment.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125192245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492288
A. Behres, B. Opitz, H. Werner, A. Kohl, J. Woitok, J. Geurts, K. Heime
Semiconductor superlattices attract the interest of physicists as well as of engineers since their electronic and optical properties are affected by externally applied voltages e.g. for optical switching devices. For sufficiently high structural quality periodicity induced effects like the Wannier-Stark effect occur. However, strain balanced superlattices do not operate in the technologically important wavelength region at 1550 nm. In this paper, we describe the addition of phosphorous into the material system as an approach to overcome this problem. This should allow one to increase the band gap of the well and barrier without changing other structural parameters like strain and period length. Photoluminescence results indicate that fluctuations of the quaternary composition and/or layer thickness are responsible for the reduced quality of these superlattices. We discuss how these effects can be avoided by optimization of growth parameters such as total reactor pressure and temperature. Finally, we present photocurrent results for optimized structures with abrupt interfaces showing the Wannier-Stark effect.
{"title":"Realization of Ga/sub x/In/sub 1-x/As/sub z/P/sub 1-z//Ga/sub y/In/sub 1-y/As/sub z/P/sub 1-z/-superlattices with abrupt interfaces for optoelectronics at /spl lambda/=1.55 /spl mu/m","authors":"A. Behres, B. Opitz, H. Werner, A. Kohl, J. Woitok, J. Geurts, K. Heime","doi":"10.1109/ICIPRM.1996.492288","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492288","url":null,"abstract":"Semiconductor superlattices attract the interest of physicists as well as of engineers since their electronic and optical properties are affected by externally applied voltages e.g. for optical switching devices. For sufficiently high structural quality periodicity induced effects like the Wannier-Stark effect occur. However, strain balanced superlattices do not operate in the technologically important wavelength region at 1550 nm. In this paper, we describe the addition of phosphorous into the material system as an approach to overcome this problem. This should allow one to increase the band gap of the well and barrier without changing other structural parameters like strain and period length. Photoluminescence results indicate that fluctuations of the quaternary composition and/or layer thickness are responsible for the reduced quality of these superlattices. We discuss how these effects can be avoided by optimization of growth parameters such as total reactor pressure and temperature. Finally, we present photocurrent results for optimized structures with abrupt interfaces showing the Wannier-Stark effect.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122473678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492306
R. Holz, S. Lourdudoss
Semi-insulating (SI) substrates and semi-insulating epitaxial layers are very important for current confinement, integration and capacitance minimisation. The authors have demonstrated the fabrication of highly resistive GaInP:Fe. They present resistivity measurements carried out on an n/SI/n structure at temperatures up to 200/spl deg/C. Such a structure should yield reliable resistivity values since it can minimise contact resistance and feasible diffusion of contacting metal into the SI material. We also demonstrate the feasibility of selective regrowth around [110] and [1~10] directional GaAs mesas.
{"title":"Highly resistive GaInP:Fe/GaAs for selective embedment of GaAs based heterostructures","authors":"R. Holz, S. Lourdudoss","doi":"10.1109/ICIPRM.1996.492306","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492306","url":null,"abstract":"Semi-insulating (SI) substrates and semi-insulating epitaxial layers are very important for current confinement, integration and capacitance minimisation. The authors have demonstrated the fabrication of highly resistive GaInP:Fe. They present resistivity measurements carried out on an n/SI/n structure at temperatures up to 200/spl deg/C. Such a structure should yield reliable resistivity values since it can minimise contact resistance and feasible diffusion of contacting metal into the SI material. We also demonstrate the feasibility of selective regrowth around [110] and [1~10] directional GaAs mesas.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121530070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491962
M. Schilling, J. Bouayad-Amine, T. Feeser, H. Haisch, E. Kuhn, E. Lach, K. Satzke, J. Weber, E. Zielinski
The realization of novel monolithically integrated multiple-segment pulse laser sources in InGaAsP MQW technology is reported. The MQW layers for all functional sections of these devices, the modulator, the active (gain) and the passive waveguide, as well as the Bragg section were grown in a single selective area growth (SAG) step by LP-MOVPE on SiO/sub 2/ patterned 2 inch InP substrates. Due to a properly selected pattern geometry 3 different bandgap regions with smooth interfaces are thereby formed along the laser cavity. The more than 4 mm long DBR lasers which exhibit a threshold current as low as 30 mA were mode locked by an intra-cavity electroabsorption modulator applying a sinusoidal voltage at around 10 GHz. In this way an optical pulse train with pulse widths <13 ps (measured with a streak camera) and high extinction ratio was generated. A time-bandwidth product of 0.5 close to the Fourier limit is obtained. This device is very attractive for signal generation in 40 Gb/s OTDM transmission systems at 1.55 /spl mu/m wavelength.
{"title":"Monolithic mode locked DBR laser with multiple-bandgap MQW structure realized by selective area growth","authors":"M. Schilling, J. Bouayad-Amine, T. Feeser, H. Haisch, E. Kuhn, E. Lach, K. Satzke, J. Weber, E. Zielinski","doi":"10.1109/ICIPRM.1996.491962","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491962","url":null,"abstract":"The realization of novel monolithically integrated multiple-segment pulse laser sources in InGaAsP MQW technology is reported. The MQW layers for all functional sections of these devices, the modulator, the active (gain) and the passive waveguide, as well as the Bragg section were grown in a single selective area growth (SAG) step by LP-MOVPE on SiO/sub 2/ patterned 2 inch InP substrates. Due to a properly selected pattern geometry 3 different bandgap regions with smooth interfaces are thereby formed along the laser cavity. The more than 4 mm long DBR lasers which exhibit a threshold current as low as 30 mA were mode locked by an intra-cavity electroabsorption modulator applying a sinusoidal voltage at around 10 GHz. In this way an optical pulse train with pulse widths <13 ps (measured with a streak camera) and high extinction ratio was generated. A time-bandwidth product of 0.5 close to the Fourier limit is obtained. This device is very attractive for signal generation in 40 Gb/s OTDM transmission systems at 1.55 /spl mu/m wavelength.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131418591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491972
G. Unterborsch, D. Trommer, A. Umbach, G. Mekonnen
Future high-bit rate optical communication networks operating at bit rates above 40 Gbit/s and, in particular, wireless cellular mobile communication systems based on an optical distribution network necessitate the availability of accordingly fast, but also highly efficient photodetectors especially for the 1.55 /spl mu/m wavelength region. We present an InP based pin-photodetector with an integrated passive optical waveguide using evanescent field coupling for operation in the wavelength around of 1.55 /spl mu/m.
{"title":"High-bandwidth 1.55 /spl mu/m waveguide integrated photodetector","authors":"G. Unterborsch, D. Trommer, A. Umbach, G. Mekonnen","doi":"10.1109/ICIPRM.1996.491972","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491972","url":null,"abstract":"Future high-bit rate optical communication networks operating at bit rates above 40 Gbit/s and, in particular, wireless cellular mobile communication systems based on an optical distribution network necessitate the availability of accordingly fast, but also highly efficient photodetectors especially for the 1.55 /spl mu/m wavelength region. We present an InP based pin-photodetector with an integrated passive optical waveguide using evanescent field coupling for operation in the wavelength around of 1.55 /spl mu/m.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126485007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491945
T. Hackbarth, M. Berg, B.E. Maile, F. Berlec, J. Dickmann
In the past, the tremendous potential of InP based devices like HFETs, HBTs etc. for possible use in advanced communication- and sensor systems has been shown many times. However, market relevant manufacturability of these components has not yet been demonstrated in an equivalent manner. An important prerequisite for the successful transfer of research results into scales of industrial relevance is to provide a material basis which is reproducible and competitive to already market introduced III-V technologies. One way to reduce the cost per epi-wafer is the use of thin buffer layers and to switch from 2" to 3" wafers. The technical advantages of thin buffer layers are manifold. Mesa isolation and final mesa height is much more reproducible due to the high selectivity of chemical etchants between InP and InAlAs. Another advantage is, that transmission lines and contact pads in MMICs can be located on semiinsulating material. In this paper we will show that a reduced buffer layer thickness does not affect device performance.
{"title":"MBE growth of lattice matched HFETs on InP: material quality and reproducibility","authors":"T. Hackbarth, M. Berg, B.E. Maile, F. Berlec, J. Dickmann","doi":"10.1109/ICIPRM.1996.491945","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491945","url":null,"abstract":"In the past, the tremendous potential of InP based devices like HFETs, HBTs etc. for possible use in advanced communication- and sensor systems has been shown many times. However, market relevant manufacturability of these components has not yet been demonstrated in an equivalent manner. An important prerequisite for the successful transfer of research results into scales of industrial relevance is to provide a material basis which is reproducible and competitive to already market introduced III-V technologies. One way to reduce the cost per epi-wafer is the use of thin buffer layers and to switch from 2\" to 3\" wafers. The technical advantages of thin buffer layers are manifold. Mesa isolation and final mesa height is much more reproducible due to the high selectivity of chemical etchants between InP and InAlAs. Another advantage is, that transmission lines and contact pads in MMICs can be located on semiinsulating material. In this paper we will show that a reduced buffer layer thickness does not affect device performance.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"272 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131645778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491943
T. Sugaya, T. Nakagawa, Y. Sugiyama
InGaAs quantum wire structures with composition-controlled InAlAs barrier layer have been fabricated on non-planar substrates by molecular beam epitaxy. The InAlAs barrier layer lattice-matched to InP on top of the truncated ridges is obtained by the control of the In flux during the growth, otherwise, the composition of InAlAs barrier layer deviates. The PL intensity of InGaAs quantum wires with composition-controlled InAlAs barrier layer is stronger than that of the wires without compositional control. This result indicates that the InGaAs quantum wire structures with good quality are fabricated by the compositional control of the InAlAs barrier layer.
{"title":"Fabrication of InGaAs quantum wires with composition-controlled barrier layers by selective growth of molecular beam epitaxy","authors":"T. Sugaya, T. Nakagawa, Y. Sugiyama","doi":"10.1109/ICIPRM.1996.491943","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491943","url":null,"abstract":"InGaAs quantum wire structures with composition-controlled InAlAs barrier layer have been fabricated on non-planar substrates by molecular beam epitaxy. The InAlAs barrier layer lattice-matched to InP on top of the truncated ridges is obtained by the control of the In flux during the growth, otherwise, the composition of InAlAs barrier layer deviates. The PL intensity of InGaAs quantum wires with composition-controlled InAlAs barrier layer is stronger than that of the wires without compositional control. This result indicates that the InGaAs quantum wire structures with good quality are fabricated by the compositional control of the InAlAs barrier layer.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121134945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492392
J. Marcon, S. Koumetz, K. Ketata, M. Ketata, P. Launay
Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, two models have been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed.
{"title":"Modeling of Be diffusion in InGaAs epitaxial layers using two approaches: Boltzmann-Matano technique and point defect nonequilibrium","authors":"J. Marcon, S. Koumetz, K. Ketata, M. Ketata, P. Launay","doi":"10.1109/ICIPRM.1996.492392","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492392","url":null,"abstract":"Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, two models have been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133917427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492284
H. Heiss, D. Xu, S. Kraus, M. Sexl, G. Bohm, G. Trankle, G. Weimann
We have optimized the layer structure and the width of lateral gate recess in lattice matched InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) to reduce the output conductance and kink-effect. Very low output conductances less than 30 mS/mm lead to excellent f/sub max/-values (maximum stable gain) of more than 320 GHz for gate lengths of 0.51 /spl mu/m.
{"title":"Reduction of the output conductance in InAlAs/InGaAs HEMTs with 0.15 /spl mu/m gates","authors":"H. Heiss, D. Xu, S. Kraus, M. Sexl, G. Bohm, G. Trankle, G. Weimann","doi":"10.1109/ICIPRM.1996.492284","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492284","url":null,"abstract":"We have optimized the layer structure and the width of lateral gate recess in lattice matched InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) to reduce the output conductance and kink-effect. Very low output conductances less than 30 mS/mm lead to excellent f/sub max/-values (maximum stable gain) of more than 320 GHz for gate lengths of 0.51 /spl mu/m.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132088005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492305
C. Mendonça, T. Chiu
We report on high quality InGaAsP/InP multiple quantum well structures grown by chemical beam epitaxy with absorption at the 1.3 to 1.5 /spl mu/m range. Transmission profiles with remarkable excitonic features and sharply defined absorption edges for p-i-n samples with as many as 200 periods are shown to be achievable. Very sharp satellite peaks with linewidth comparable with that from the substrate are shown in the X-ray diffraction. We use a new method to monitor the substrate temperature which shows excellent results in terms of homogeneity of layer thickness and composition even for structures with a large number of periods.
{"title":"High quality InGaAsP/InP multiple quantum well modulator structures for 1.3 and 1.5 /spl mu/m applications","authors":"C. Mendonça, T. Chiu","doi":"10.1109/ICIPRM.1996.492305","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492305","url":null,"abstract":"We report on high quality InGaAsP/InP multiple quantum well structures grown by chemical beam epitaxy with absorption at the 1.3 to 1.5 /spl mu/m range. Transmission profiles with remarkable excitonic features and sharply defined absorption edges for p-i-n samples with as many as 200 periods are shown to be achievable. Very sharp satellite peaks with linewidth comparable with that from the substrate are shown in the X-ray diffraction. We use a new method to monitor the substrate temperature which shows excellent results in terms of homogeneity of layer thickness and composition even for structures with a large number of periods.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"510 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133122905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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