首页 > 最新文献

IEEE Custom Integrated Circuits Conference 2006最新文献

英文 中文
Measurement results of delay degradation due to power supply noise well correlated with full-chip simulation 电源噪声引起的时延退化的测量结果与全芯片仿真结果具有良好的相关性
Pub Date : 2006-09-01 DOI: 10.1109/CICC.2006.320930
Y. Ogasahara, Takashi Enami, M. Hashimoto, Takashi Sato, T. Onoye
Power integrity is an crucial design issue in nanometer technologies because of lowered supply voltage and current increase. This paper focuses on gate delay variation due to power/ground noise, and demonstrates measurement results in a 90nm technology. For full-chip simulation, a current model with capacitance and variable resistor is developed to accurately model current dependency on voltage drop. Measurement results are well correlated with simulation, and verify that gate delay depends on average voltage drop
由于电源电压的降低和电流的增大,电源完整性是纳米技术设计中的一个关键问题。本文重点研究了功率/地噪声引起的门延迟变化,并展示了在90nm技术下的测量结果。在全芯片仿真中,建立了带电容和可变电阻的电流模型,以准确地模拟电流对压降的依赖关系。测量结果与仿真结果吻合较好,验证了栅极延迟与平均压降的关系
{"title":"Measurement results of delay degradation due to power supply noise well correlated with full-chip simulation","authors":"Y. Ogasahara, Takashi Enami, M. Hashimoto, Takashi Sato, T. Onoye","doi":"10.1109/CICC.2006.320930","DOIUrl":"https://doi.org/10.1109/CICC.2006.320930","url":null,"abstract":"Power integrity is an crucial design issue in nanometer technologies because of lowered supply voltage and current increase. This paper focuses on gate delay variation due to power/ground noise, and demonstrates measurement results in a 90nm technology. For full-chip simulation, a current model with capacitance and variable resistor is developed to accurately model current dependency on voltage drop. Measurement results are well correlated with simulation, and verify that gate delay depends on average voltage drop","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132059252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Comparison and Impact of Substrate Noise Generated by Clocked and Clockless Digital Circuitry 有时钟和无时钟数字电路产生的衬底噪声的比较和影响
Pub Date : 2006-09-01 DOI: 10.1109/CICC.2006.321003
Jim Le, Christopher Hanken, Martin Held, M. Hagedorn, K. Mayaram, T. Fiez
A pseudo-random number generator implemented in asynchronous logic generates one-fifth the RMS substrate noise compared to the equivalent design in synchronous logic. An asynchronous 8051 processor generates one-third the RMS substrate noise as the equivalent synchronous design. The SNR of a second order delta-sigma modulator (DSM) is not affected by substrate noise due to an asynchronous processor while it experiences 15 dB degradation when the synchronous 8051 processor is clocked near integer multiples of the DSM sampling frequency
在异步逻辑中实现的伪随机数发生器产生的RMS基板噪声与同步逻辑中的等效设计相比减少了五分之一。异步8051处理器产生的RMS基板噪声是等效同步设计的三分之一。二阶δ - σ调制器(DSM)的信噪比不受异步处理器引起的衬底噪声的影响,而当同步8051处理器的时钟接近DSM采样频率的整数倍时,其信噪比会下降15 dB
{"title":"Comparison and Impact of Substrate Noise Generated by Clocked and Clockless Digital Circuitry","authors":"Jim Le, Christopher Hanken, Martin Held, M. Hagedorn, K. Mayaram, T. Fiez","doi":"10.1109/CICC.2006.321003","DOIUrl":"https://doi.org/10.1109/CICC.2006.321003","url":null,"abstract":"A pseudo-random number generator implemented in asynchronous logic generates one-fifth the RMS substrate noise compared to the equivalent design in synchronous logic. An asynchronous 8051 processor generates one-third the RMS substrate noise as the equivalent synchronous design. The SNR of a second order delta-sigma modulator (DSM) is not affected by substrate noise due to an asynchronous processor while it experiences 15 dB degradation when the synchronous 8051 processor is clocked near integer multiples of the DSM sampling frequency","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124311809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Integrated 155M-10Gbps Framer with 22.5Gbps Low/High Order Cross Connect SoC 集成155M-10Gbps帧与22.5Gbps低/高阶交叉连接SoC
Pub Date : 2006-09-01 DOI: 10.1109/CICC.2006.321002
K. Venkataraman, V. Suresh, S. Iyengar, M. Ott, S. R. Kalari, J. Zhi, E. Ruetz, M. Gray, B. Reynov, A. Iqbal
The advent of broadband services requires multi service provisioning platforms (MSPP) to achieve >10Gbps capacity with 1-4 rack unit footprint, power <200W and cost <$10K. Highly integrated SoC using 0.13mu CMOS 19.3times19.3mm die packaged in a 1517 FCBGA affords a unique MSPP solution consisting of 155M-10Gbps SONET/SDH framing, low/high order path processing, grooming, cross-connection up to 22.5Gbps and an embedded processor. A rigorous methodology enabled a production-worthy SoC comprising 9Mgates/14Mbit memory
宽带业务的出现需要多业务配置平台(MSPP)在1-4个机架单元占地面积、功率<200W、成本< 1万美元的情况下实现bbb10 gbps的容量。高度集成的SoC采用1517 FCBGA封装的0.13mu CMOS 19.3times19.3mm芯片,提供独特的MSPP解决方案,包括15m - 10gbps SONET/SDH帧,低/高阶路径处理,修饰,高达22.5Gbps的交叉连接和嵌入式处理器。严格的方法使SoC具有生产价值,包括9Mgates/14Mbit内存
{"title":"Integrated 155M-10Gbps Framer with 22.5Gbps Low/High Order Cross Connect SoC","authors":"K. Venkataraman, V. Suresh, S. Iyengar, M. Ott, S. R. Kalari, J. Zhi, E. Ruetz, M. Gray, B. Reynov, A. Iqbal","doi":"10.1109/CICC.2006.321002","DOIUrl":"https://doi.org/10.1109/CICC.2006.321002","url":null,"abstract":"The advent of broadband services requires multi service provisioning platforms (MSPP) to achieve >10Gbps capacity with 1-4 rack unit footprint, power <200W and cost <$10K. Highly integrated SoC using 0.13mu CMOS 19.3times19.3mm die packaged in a 1517 FCBGA affords a unique MSPP solution consisting of 155M-10Gbps SONET/SDH framing, low/high order path processing, grooming, cross-connection up to 22.5Gbps and an embedded processor. A rigorous methodology enabled a production-worthy SoC comprising 9Mgates/14Mbit memory","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133810815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Fully Integrated DC/DC Converter for Tunable RF Filters 用于可调谐射频滤波器的全集成DC/DC转换器
Pub Date : 2006-09-01 DOI: 10.1109/CICC.2006.321014
Mohamed Bouhamame, J. Tourret, Luca Lo Coco, S. Toutain, O. Pasquier
A controllable high voltage DC/DC converter has been designed that can generate an output voltage from 0 to 30V with a 2.8V supply voltage. It is suitable for controlling MEMS and high voltage varicap devices in tunable filters. The proposed DC/DC converter uses a novel approach to decrease the output voltage by cascading two Dickson charge pumps (Dickson, 1976). It is operating with a clock frequency of 16MHz and is built in a 0.25mum Bi-CMOS technology
设计了一种可控高压DC/DC变换器,该变换器在2.8V的供电电压下可产生0 ~ 30V的输出电压。它适用于可调谐滤波器中对MEMS和高压可变电容器件的控制。所提出的DC/DC变换器采用了一种新颖的方法,通过级联两个Dickson电荷泵来降低输出电压(Dickson, 1976)。它的时钟频率为16MHz,采用0.25 μ m Bi-CMOS技术
{"title":"A Fully Integrated DC/DC Converter for Tunable RF Filters","authors":"Mohamed Bouhamame, J. Tourret, Luca Lo Coco, S. Toutain, O. Pasquier","doi":"10.1109/CICC.2006.321014","DOIUrl":"https://doi.org/10.1109/CICC.2006.321014","url":null,"abstract":"A controllable high voltage DC/DC converter has been designed that can generate an output voltage from 0 to 30V with a 2.8V supply voltage. It is suitable for controlling MEMS and high voltage varicap devices in tunable filters. The proposed DC/DC converter uses a novel approach to decrease the output voltage by cascading two Dickson charge pumps (Dickson, 1976). It is operating with a clock frequency of 16MHz and is built in a 0.25mum Bi-CMOS technology","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133909895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Low-Power Design of Pipeline A/D Converters 流水线A/D转换器的低功耗设计
Pub Date : 2006-09-01 DOI: 10.1109/CICC.2006.320894
S. Kawahito
In this paper, low-power design techniques of highspeed A/D converters are reviewed and discussed. Pipeline and parallel-pipeline architectures are treated as these are dominant architectures when required high sampling rate and high resolution with reasonable power dissipation. A power optimization of pipeline and parallel pipeline ADCs based on models of noise analysis and response time of a building block in the multiple-stage pipeline ADC is also presented. Finally, the theoretical minimum of required power in pipeline ADCs is discussed
本文对高速A/D转换器的低功耗设计技术进行了综述和讨论。在需要高采样率、高分辨率和合理功耗的情况下,流水线和并行流水线架构被认为是主流架构。提出了一种基于多级流水线ADC的噪声分析和模块响应时间模型的流水线和并行流水线ADC的功率优化方法。最后,讨论了流水线adc所需功率的理论最小值
{"title":"Low-Power Design of Pipeline A/D Converters","authors":"S. Kawahito","doi":"10.1109/CICC.2006.320894","DOIUrl":"https://doi.org/10.1109/CICC.2006.320894","url":null,"abstract":"In this paper, low-power design techniques of highspeed A/D converters are reviewed and discussed. Pipeline and parallel-pipeline architectures are treated as these are dominant architectures when required high sampling rate and high resolution with reasonable power dissipation. A power optimization of pipeline and parallel pipeline ADCs based on models of noise analysis and response time of a building block in the multiple-stage pipeline ADC is also presented. Finally, the theoretical minimum of required power in pipeline ADCs is discussed","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123860691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Design of a binary-weighted resistor DAC using tunable linearized floating-gate CMOS resistors 利用可调谐线性化浮栅CMOS电阻设计二值加权电阻DAC
Pub Date : 2006-09-01 DOI: 10.1109/CICC.2006.320867
Erhan Ozalevli, H. Dinç, H. Lo, P. Hasler
We present an implementation of a 4-bit binary-weighted-resistor DAC to be used in quantizers. It is built by using tunable floating-gate CMOS resistors, which exploit the capacitive coupling and voltage storage capabilities of floating-gate transistors and employ scaled-gate linearization technique to suppress the MOSFET nonlinearities. The resistance of these resistors drifts 1.6 middot 10-3% over the period of 10 years at 25degC. By using these resistors, 15-bit accurate DAC is implemented in 0.5mum CMOS process
我们提出了一个用于量化器的4位二进制加权电阻DAC的实现。该电路采用可调浮栅CMOS电阻器,利用浮栅晶体管的电容耦合和电压存储能力,采用标度栅线性化技术抑制MOSFET的非线性。在25℃下,这些电阻的电阻在10年内漂移1.6中点10-3%。通过使用这些电阻,在0.5 μ m CMOS工艺中实现了15位精确的DAC
{"title":"Design of a binary-weighted resistor DAC using tunable linearized floating-gate CMOS resistors","authors":"Erhan Ozalevli, H. Dinç, H. Lo, P. Hasler","doi":"10.1109/CICC.2006.320867","DOIUrl":"https://doi.org/10.1109/CICC.2006.320867","url":null,"abstract":"We present an implementation of a 4-bit binary-weighted-resistor DAC to be used in quantizers. It is built by using tunable floating-gate CMOS resistors, which exploit the capacitive coupling and voltage storage capabilities of floating-gate transistors and employ scaled-gate linearization technique to suppress the MOSFET nonlinearities. The resistance of these resistors drifts 1.6 middot 10-3% over the period of 10 years at 25degC. By using these resistors, 15-bit accurate DAC is implemented in 0.5mum CMOS process","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123921752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Digital RF Processor Techniques for Single-Chip Radios 单片机无线电数字射频处理器技术
Pub Date : 2006-09-01 DOI: 10.1109/CICC.2006.320998
R. Staszewski, K. Muhammad, D. Leipold
RF circuits for multi-GHz frequencies have recently migrated to low-cost digital deep-submicron CMOS processes. Unfortunately, this process environment, which is optimized only for digital logic and SRAM memory, is extremely unfriendly for conventional analog and RF designs. We present fundamental techniques recently developed that transform the RF and analog circuit design complexity to digital domain for a wireless RF transceiver, so that it enjoys the benefits of digital approach, such as process node scaling and design automation. All-digital phase locked loop, all-digital control of phase and amplitude of a polar transmitter, and direct RF sampling techniques allow great flexibility in reconfigurable radio design. Digital signal processing concepts are used to help relieve analog design complexity, allowing one to reduce cost and power consumption in a reconfigurable design environment. VHDL hardware description language is universally used throughout this SoC. The ideas presented have been used in Texas Instruments to develop two generations of commercial digital RF processors: a single-chip Bluetooth radio and a single-chip GSM radio
多ghz频率的射频电路最近已经迁移到低成本的数字深亚微米CMOS工艺。不幸的是,这种工艺环境仅针对数字逻辑和SRAM存储器进行了优化,对传统的模拟和射频设计非常不友好。我们介绍了最近开发的将无线射频收发器的RF和模拟电路设计复杂性转换为数字域的基本技术,使其享受数字方法的好处,例如过程节点缩放和设计自动化。全数字锁相环,全数字控制极性发射机的相位和幅度,以及直接射频采样技术允许在可重构无线电设计中具有很大的灵活性。数字信号处理概念用于帮助减轻模拟设计的复杂性,允许在可重构的设计环境中降低成本和功耗。VHDL硬件描述语言在整个SoC中普遍使用。所提出的想法已被德州仪器用于开发两代商用数字射频处理器:单芯片蓝牙无线电和单芯片GSM无线电
{"title":"Digital RF Processor Techniques for Single-Chip Radios","authors":"R. Staszewski, K. Muhammad, D. Leipold","doi":"10.1109/CICC.2006.320998","DOIUrl":"https://doi.org/10.1109/CICC.2006.320998","url":null,"abstract":"RF circuits for multi-GHz frequencies have recently migrated to low-cost digital deep-submicron CMOS processes. Unfortunately, this process environment, which is optimized only for digital logic and SRAM memory, is extremely unfriendly for conventional analog and RF designs. We present fundamental techniques recently developed that transform the RF and analog circuit design complexity to digital domain for a wireless RF transceiver, so that it enjoys the benefits of digital approach, such as process node scaling and design automation. All-digital phase locked loop, all-digital control of phase and amplitude of a polar transmitter, and direct RF sampling techniques allow great flexibility in reconfigurable radio design. Digital signal processing concepts are used to help relieve analog design complexity, allowing one to reduce cost and power consumption in a reconfigurable design environment. VHDL hardware description language is universally used throughout this SoC. The ideas presented have been used in Texas Instruments to develop two generations of commercial digital RF processors: a single-chip Bluetooth radio and a single-chip GSM radio","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127726451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Circuit Optimization Using Scale Based Sensitivities 基于比例灵敏度的电路优化
Pub Date : 2006-09-01 DOI: 10.1109/CICC.2006.320839
B. Agrawal, Frank Liu, S. Nassif
Most robust circuit sizing and optimization algorithms require detailed information about the sensitivity of circuit performance to device behavior. Additionally, rapid technology scaling and the introduction of novel device structures to extend CMOS scaling is resulting in the rapid introduction of new models into our simulation infrastructure. This paper presents a novel technique for the efficient computation of circuit performance sensitivity in a model independent manner. The advantage of the method is that it allows rapid deployment of accurate optimization methods even for new or exploratory models. The use of these gradients was demonstrated in circuit optimization to generate an area vs. timing variability trade-off curve for an SRAM cell design in the presence of N and P device threshold voltage variations
大多数稳健的电路尺寸和优化算法都需要有关电路性能对器件行为敏感性的详细信息。此外,快速的技术扩展和引入新的器件结构来扩展CMOS扩展,导致新模型快速引入我们的仿真基础设施。本文提出了一种独立于模型的电路性能灵敏度的高效计算方法。该方法的优点是,它允许快速部署准确的优化方法,即使是新的或探索性的模型。在电路优化中演示了这些梯度的使用,以在N和P器件阈值电压变化的情况下为SRAM单元设计生成面积与时序可变性权衡曲线
{"title":"Circuit Optimization Using Scale Based Sensitivities","authors":"B. Agrawal, Frank Liu, S. Nassif","doi":"10.1109/CICC.2006.320839","DOIUrl":"https://doi.org/10.1109/CICC.2006.320839","url":null,"abstract":"Most robust circuit sizing and optimization algorithms require detailed information about the sensitivity of circuit performance to device behavior. Additionally, rapid technology scaling and the introduction of novel device structures to extend CMOS scaling is resulting in the rapid introduction of new models into our simulation infrastructure. This paper presents a novel technique for the efficient computation of circuit performance sensitivity in a model independent manner. The advantage of the method is that it allows rapid deployment of accurate optimization methods even for new or exploratory models. The use of these gradients was demonstrated in circuit optimization to generate an area vs. timing variability trade-off curve for an SRAM cell design in the presence of N and P device threshold voltage variations","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121164634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Pulsenet - A Parallel Flash Sampler and Digital Processor IC for Optical SETI 一种用于光学SETI的并行闪光采样器和数字处理器IC
Pub Date : 2006-09-01 DOI: 10.1109/CICC.2006.320854
A. Howard, Gu-Yeon Wei, W. Dally, P. Horowitz
PulseNet is a full-custom IC with parallel flash ADC and digital processing that enables an all-sky optical search for extraterrestrial intelligence. It integrates 448 sense amplifiers that digitize 32 analog signals at 1GS/s, and other circuits that filter samples, store candidate signals, and perform astronomical observations. Its ~250,000 CMOS transistors (TSMC 0.25μm) dissipate 1.1W at 400MHz and 2.5V.
PulseNet是一款全定制IC,具有并行闪存ADC和数字处理功能,可实现对外星智能的全天光学搜索。它集成了448个感测放大器,以1GS/s的速度数字化32个模拟信号,以及其他滤波采样、存储候选信号和执行天文观测的电路。其约250,000个CMOS晶体管(TSMC 0.25μm)在400MHz和2.5V时耗散1.1W。
{"title":"Pulsenet - A Parallel Flash Sampler and Digital Processor IC for Optical SETI","authors":"A. Howard, Gu-Yeon Wei, W. Dally, P. Horowitz","doi":"10.1109/CICC.2006.320854","DOIUrl":"https://doi.org/10.1109/CICC.2006.320854","url":null,"abstract":"PulseNet is a full-custom IC with parallel flash ADC and digital processing that enables an all-sky optical search for extraterrestrial intelligence. It integrates 448 sense amplifiers that digitize 32 analog signals at 1GS/s, and other circuits that filter samples, store candidate signals, and perform astronomical observations. Its ~250,000 CMOS transistors (TSMC 0.25μm) dissipate 1.1W at 400MHz and 2.5V.","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128438950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Time-Slicing Ring Oscillator for Capturing Instantaneous Delay Degradation and Power Supply Voltage Drop 用于捕捉瞬时延迟退化和电源电压下降的时间切片环形振荡器
Pub Date : 2006-09-01 DOI: 10.1109/CICC.2006.320990
Takashi Sato, Yu Matsumoto, K. Hirakimoto, M. Komoda, J. Mano
A time-slicing ring oscillator (TSRO) which captures dynamic delay degradation due to instantaneous voltage drop on a power supply network is proposed. Voltage drop impact on delay is directly measured and time-domain effective voltage drop waveforms is also obtained. The TSRO consists of standard logic cells only hence fits almost anywhere in logic circuits for in-situ measurements. Measurement results of a test chip using 90-nm process successfully proved its concept
提出了一种时间切片环振荡器(TSRO),用于捕获供电网络上瞬时电压降引起的动态延迟退化。直接测量了电压降对延时的影响,得到了时域有效电压降波形。TSRO仅由标准逻辑单元组成,因此几乎适用于现场测量的逻辑电路中的任何地方。采用90纳米工艺的测试芯片的测量结果成功地验证了其概念
{"title":"A Time-Slicing Ring Oscillator for Capturing Instantaneous Delay Degradation and Power Supply Voltage Drop","authors":"Takashi Sato, Yu Matsumoto, K. Hirakimoto, M. Komoda, J. Mano","doi":"10.1109/CICC.2006.320990","DOIUrl":"https://doi.org/10.1109/CICC.2006.320990","url":null,"abstract":"A time-slicing ring oscillator (TSRO) which captures dynamic delay degradation due to instantaneous voltage drop on a power supply network is proposed. Voltage drop impact on delay is directly measured and time-domain effective voltage drop waveforms is also obtained. The TSRO consists of standard logic cells only hence fits almost anywhere in logic circuits for in-situ measurements. Measurement results of a test chip using 90-nm process successfully proved its concept","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115894501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
期刊
IEEE Custom Integrated Circuits Conference 2006
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1