Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307431
K. Yoshikawa, S. Yamada, J. Miyamoto, T. Suzuki, M. Oshikiri, E. Obi, Y. Hiura, K. Yamada, Y. Ohshima, S. Atsumi
The effects of process and device parameter fluctuations of flash EEPROM cells on the flash-erasing instabilities are systematically investigated using a simple analytical model and numerical simulation. Among various erase methods, the High voltage Source with grounded Erase (HSE) method is the most stable scheme for the control of erasing speed and erased threshold voltage distribution. The stability of HSE is caused by the reduced electric field fluctuations associated with cell parameter variations, due to the source bias effect, especially at the final stage of erasing. It is also found that the recently proposed self-convergence scheme is an effective tool for suppressing the erased-V/sub t/ distribution width, and that negative gate erase designs equipped with this method will be a powerful vehicle for the next generation scaled flash devices.<>
采用简单的解析模型和数值模拟方法，系统地研究了闪存EEPROM单元的工艺参数和器件参数波动对闪存擦除不稳定性的影响。在各种擦除方法中，高压源接地擦除(HSE)方法是控制擦除速度和擦除阈值电压分布最稳定的方案。由于源偏置效应，特别是在擦除的最后阶段，降低了与电池参数变化相关的电场波动，从而降低了HSE的稳定性。研究还发现，最近提出的自收敛方案是抑制擦除- v /sub - t/分布宽度的有效工具，并且配备这种方法的负栅擦除设计将成为下一代缩放闪存器件的强大载体。
{"title":"Comparison of current flash EEPROM erasing methods: stability and how to control","authors":"K. Yoshikawa, S. Yamada, J. Miyamoto, T. Suzuki, M. Oshikiri, E. Obi, Y. Hiura, K. Yamada, Y. Ohshima, S. Atsumi","doi":"10.1109/IEDM.1992.307431","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307431","url":null,"abstract":"The effects of process and device parameter fluctuations of flash EEPROM cells on the flash-erasing instabilities are systematically investigated using a simple analytical model and numerical simulation. Among various erase methods, the High voltage Source with grounded Erase (HSE) method is the most stable scheme for the control of erasing speed and erased threshold voltage distribution. The stability of HSE is caused by the reduced electric field fluctuations associated with cell parameter variations, due to the source bias effect, especially at the final stage of erasing. It is also found that the recently proposed self-convergence scheme is an effective tool for suppressing the erased-V/sub t/ distribution width, and that negative gate erase designs equipped with this method will be a powerful vehicle for the next generation scaled flash devices.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114951808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307342
W. DeHope, G. Hu, M. Mizuhara, J. Neilson, R. Schumacher, C. Chong, A. Lin, N. Luhmann, D. Mcdermott, T. Stewart
The design of a high power, 95 GHz gyrotron-TWT amplifier with wide bandwidth is described. The development of a complete tube is under way, capable of 10% duty operation, with predicted performance of 80 kW peak power at an efficiency of 23% and a bandwidth of 3% about 95 GHz.<>
{"title":"Design and development of a third harmonic, 95 GHz gyroTWT","authors":"W. DeHope, G. Hu, M. Mizuhara, J. Neilson, R. Schumacher, C. Chong, A. Lin, N. Luhmann, D. Mcdermott, T. Stewart","doi":"10.1109/IEDM.1992.307342","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307342","url":null,"abstract":"The design of a high power, 95 GHz gyrotron-TWT amplifier with wide bandwidth is described. The development of a complete tube is under way, capable of 10% duty operation, with predicted performance of 80 kW peak power at an efficiency of 23% and a bandwidth of 3% about 95 GHz.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114975304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307516
F. Friedlander
To date, the design of externally coupled klystron cavities has been performed experimentally, with several weeks of fabrication and testing required to achieve the desired resonance frequency and Q for a typical new design. The application of computer-aided analysis to this design problem has achieved significant results, which are presented in this paper.<>
{"title":"Analysis of waveguide-loaded klystron cavities","authors":"F. Friedlander","doi":"10.1109/IEDM.1992.307516","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307516","url":null,"abstract":"To date, the design of externally coupled klystron cavities has been performed experimentally, with several weeks of fabrication and testing required to achieve the desired resonance frequency and Q for a typical new design. The application of computer-aided analysis to this design problem has achieved significant results, which are presented in this paper.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"177 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122094387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307371
H. Rohdin, A. Nagy
We report a method for fabricating sub-0.1- mu m gates using conventional optical contact lithography, exploiting self-limiting notch formation in conformal PECVD oxide between ohmic contacts, and the limited lateral etch of oxide by RIE. The resulting gate openings in the oxide are very narrow ( approximately=700 AA), and quite uniform ( sigma <0.2x). 154 GHz current gain cutoff frequency has been extrapolated for a pseudomorphic InGaAs-channel E-MODFET made in this way. Functioning prescalers have been fabricated and characterized on-wafer.<>
{"title":"A 150 GHz sub-0.1- mu m E/D MODFET MSI process","authors":"H. Rohdin, A. Nagy","doi":"10.1109/IEDM.1992.307371","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307371","url":null,"abstract":"We report a method for fabricating sub-0.1- mu m gates using conventional optical contact lithography, exploiting self-limiting notch formation in conformal PECVD oxide between ohmic contacts, and the limited lateral etch of oxide by RIE. The resulting gate openings in the oxide are very narrow ( approximately=700 AA), and quite uniform ( sigma <0.2x). 154 GHz current gain cutoff frequency has been extrapolated for a pseudomorphic InGaAs-channel E-MODFET made in this way. Functioning prescalers have been fabricated and characterized on-wafer.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128412839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307509
S. K. Jones, A. Gérodolle, C. Lombardi, M. Schafer, C. Hill
Complete simulation of advanced double layer polysilicon bipolar technology is presented using 2D process, equipment and device modelling in the STORM simulation environment. Polysilicon emitter size scaling and the perimeter depletion effect are studied. Process simulation results for non-planar polysilicon topographies are presented and the consequences of these on the device characteristics are explored.<>
{"title":"Complete bipolar simulation using STORM","authors":"S. K. Jones, A. Gérodolle, C. Lombardi, M. Schafer, C. Hill","doi":"10.1109/IEDM.1992.307509","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307509","url":null,"abstract":"Complete simulation of advanced double layer polysilicon bipolar technology is presented using 2D process, equipment and device modelling in the STORM simulation environment. Polysilicon emitter size scaling and the perimeter depletion effect are studied. Process simulation results for non-planar polysilicon topographies are presented and the consequences of these on the device characteristics are explored.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127028450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307402
H. Fukuda, A. Uchiyama, T. Kuramochi, T. Hayashi, T. Iwabuchi, T. Ono, T. Takayashiki
We have proposed a heavy oxynitridation (RTONO) technology of the tunnel oxide, and successfully applied it to the scaled flash-type EEPROMs. Excellent program and erase (P/E) endurance properties were obtained with much small window closure (less than 6%). In addition, good P/E speeds are also obtained. The SIMS results show that a large number of N atoms (>10/sup 20/ atoms/cm/sup 3/) are incorporated into SiO/sub 2/, while the number of H atoms is decreased. Accordingly, almost no increase of trapped charge by the P/E stress is induced. Thus, this technology is the key to providing flash-EEPROM in the submicron regime.<>
{"title":"High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films","authors":"H. Fukuda, A. Uchiyama, T. Kuramochi, T. Hayashi, T. Iwabuchi, T. Ono, T. Takayashiki","doi":"10.1109/IEDM.1992.307402","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307402","url":null,"abstract":"We have proposed a heavy oxynitridation (RTONO) technology of the tunnel oxide, and successfully applied it to the scaled flash-type EEPROMs. Excellent program and erase (P/E) endurance properties were obtained with much small window closure (less than 6%). In addition, good P/E speeds are also obtained. The SIMS results show that a large number of N atoms (>10/sup 20/ atoms/cm/sup 3/) are incorporated into SiO/sub 2/, while the number of H atoms is decreased. Accordingly, almost no increase of trapped charge by the P/E stress is induced. Thus, this technology is the key to providing flash-EEPROM in the submicron regime.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129965524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307367
M. Hashemi, J. Shealy, S. Denbaars, U. Mishra
A new InP-JFET (Heterojunction JFET or HJFET) having p/sup +/ GaInAs as the gate material is proposed and fabricated. The large valence band discontinuity in In/sub .53/Ga/sub .47/As/InP interface ( Delta E/sub V/ approximately=0.37 eV) considerably suppresses hole injection into the channel in this HJFET as compared to homojunction InP-JFETs, allowing higher positive gate bias without g/sub m/ compression. Heterojunction JFETs (HJFETs) with gate length of 0.6 mu m have resulted in a unity current gain cut-off frequency (f/sub T/) and power gain cut-off frequency (f/sub max/) of 14.3 GHz and 37.5 GHz, respectively. Using a self-aligned structure a g/sub m/ and f/sub T/ as high as 230 mS/mm and 21 GHz were obtained, respectively. At 4 GHz, a maximum power density of 1.0 W/mm with power added efficiency of 40% was obtained. These results indicate that the HJFET is a preferred device for high speed logic circuits based on JFET technology.<>
{"title":"High performance heterojunction InGaAs/InP JFET grown by MOCVD using tertiarybutylphosphine (TBP)","authors":"M. Hashemi, J. Shealy, S. Denbaars, U. Mishra","doi":"10.1109/IEDM.1992.307367","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307367","url":null,"abstract":"A new InP-JFET (Heterojunction JFET or HJFET) having p/sup +/ GaInAs as the gate material is proposed and fabricated. The large valence band discontinuity in In/sub .53/Ga/sub .47/As/InP interface ( Delta E/sub V/ approximately=0.37 eV) considerably suppresses hole injection into the channel in this HJFET as compared to homojunction InP-JFETs, allowing higher positive gate bias without g/sub m/ compression. Heterojunction JFETs (HJFETs) with gate length of 0.6 mu m have resulted in a unity current gain cut-off frequency (f/sub T/) and power gain cut-off frequency (f/sub max/) of 14.3 GHz and 37.5 GHz, respectively. Using a self-aligned structure a g/sub m/ and f/sub T/ as high as 230 mS/mm and 21 GHz were obtained, respectively. At 4 GHz, a maximum power density of 1.0 W/mm with power added efficiency of 40% was obtained. These results indicate that the HJFET is a preferred device for high speed logic circuits based on JFET technology.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122371669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307320
E. Roks, P. Centen, L. Sankaranarayanan, J. Slotboom, J. Bosiers, W. Huinink
A new bipolar charge detector, called the Floating Base Detector (FBD), fabricated in a standard CCD image sensor process, is presented. It can be used as an output structure for CCD registers or as a compact pixel-gain element. The FBD, with a charge handling capability of 30,000 electrons, has achieved a dynamic range of 84 dB over 5 MHz bandwidth which corresponds to a noise electron equivalent of 1.9 electrons.<>
{"title":"A bipolar floating base detector (FBD) for CCD image sensors","authors":"E. Roks, P. Centen, L. Sankaranarayanan, J. Slotboom, J. Bosiers, W. Huinink","doi":"10.1109/IEDM.1992.307320","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307320","url":null,"abstract":"A new bipolar charge detector, called the Floating Base Detector (FBD), fabricated in a standard CCD image sensor process, is presented. It can be used as an output structure for CCD registers or as a compact pixel-gain element. The FBD, with a charge handling capability of 30,000 electrons, has achieved a dynamic range of 84 dB over 5 MHz bandwidth which corresponds to a noise electron equivalent of 1.9 electrons.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122372831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307314
P. Enquist, D. Slater, J. Hutchby, A. Morris, R. Trew
A novel HBT mesa fabrication process is described which utilizes selective OMVPE regrowth of the emitter to simultaneously provide self-aligned base contacts and eliminate the problematical base etch. Additional advantages of this process include the ability to simultaneously achieve a thick extrinsic base for reduced base resistance and thin intrinsic base for reduced base transit time and the ability to simultaneously metallize emitter and base.<>
{"title":"Self-aligned mesa HBT with selective epitaxial regrown emitter and no base etch","authors":"P. Enquist, D. Slater, J. Hutchby, A. Morris, R. Trew","doi":"10.1109/IEDM.1992.307314","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307314","url":null,"abstract":"A novel HBT mesa fabrication process is described which utilizes selective OMVPE regrowth of the emitter to simultaneously provide self-aligned base contacts and eliminate the problematical base etch. Additional advantages of this process include the ability to simultaneously achieve a thick extrinsic base for reduced base resistance and thin intrinsic base for reduced base transit time and the ability to simultaneously metallize emitter and base.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132860062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1992.307462
L. Selmi, C. Fiegna, E. Sangiorgi, R. Bez, B. Riccò
A reliable numerical model to compute the energy distribution of hot electrons in one dimensional MOS structures is used to investigate the role of carrier energy on the degradation induced by optically generated substrate hot electrons. Comparison with preliminary experimental results suggests that the degradation is mainly due to carriers with energy below the Si-SiO/sub 2/ energy barrier.<>
{"title":"Analysis of uniform degradation in n-MOSFETS","authors":"L. Selmi, C. Fiegna, E. Sangiorgi, R. Bez, B. Riccò","doi":"10.1109/IEDM.1992.307462","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307462","url":null,"abstract":"A reliable numerical model to compute the energy distribution of hot electrons in one dimensional MOS structures is used to investigate the role of carrier energy on the degradation induced by optically generated substrate hot electrons. Comparison with preliminary experimental results suggests that the degradation is mainly due to carriers with energy below the Si-SiO/sub 2/ energy barrier.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128795727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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