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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)最新文献

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Nonlinear optical properties of ion-implanted GaAs 离子注入砷化镓的非线性光学性质
M.J. Lodeer, B. Luther-Davies, H. Tan, C. Jagadish, M. Haimi, U. Siegner, U. Keller, J. Zou
We report a comprehensive study of the response times and nonlinear optical absorption modulation of Arsenic and Oxygen implanted GaAs for various doses and annealing conditions. Response times of 400 fs could be achieved with O-implantation whilst preserving 80% of the modulation depth of unimplanted GaAs. It was found that a relationship exists between modulation and recovery time which also marks the best possible performance, and which is independent of the implanted ion species. However, for doses large enough to cause amorphization this relationship is irreversibly broken.
我们报道了砷和氧注入GaAs在不同剂量和退火条件下的响应时间和非线性光学吸收调制的综合研究。o型注入可以实现400 fs的响应时间,同时保持未注入GaAs调制深度的80%。发现调制与恢复时间之间存在关系,这也标志着最佳性能,并且与注入离子种类无关。然而,当剂量大到足以引起非晶化时,这种关系就不可逆转地破裂了。
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引用次数: 0
Nanocrystalline TiO/sub 2/ thin films for O/sub 2/ gas sensing 用于O/sub /气体传感的纳米晶tio2 /sub /薄膜
Y. Li, M. Atashbar, M. Ghantasala, W. Wlodarski, M. Austin
Titanium dioxide (TiO/sub 2/) thin films have been prepared using a nanosized TiO/sub 2/ suspension and a spin-coating process. The morphology, microstructure, crystalline structure and chemical composition of the TiO/sub 2/ thin films have been investigated using SEM, XRD, and RBS. SEM analysis showed that the films are smooth and uniform with an average particle size of 25 nm. The crystal structure of the films is a mixture of 70% anatase and 30% rutile phases. RBS characterisation has revealed that the film is sub-stoichiometric TiO/sub 2-n/. The variation of electrical resistance of the thin films has been examined at different oxygen concentrations from 1 ppm to 1%. The response of the sensor to 100 ppm, 1000 ppm, and 1% O/sub 2/ gas is 1.4, 2.4, and 4.9, respectively. The response and recovery times (t/sub 0.90%/) are about 2 minutes.
采用纳米tio2 /sub - 2/悬浮液和旋涂法制备了二氧化钛(TiO/sub - 2/)薄膜。采用SEM、XRD和RBS等手段对tio2 /sub /薄膜的形貌、微观结构、晶体结构和化学成分进行了表征。SEM分析表明,薄膜光滑均匀,平均粒径为25 nm。薄膜的晶体结构为70%锐钛矿和30%金红石相的混合物。RBS表征表明该膜为亚化学计量TiO/sub - 2-n/。在1 ppm ~ 1%的不同氧浓度下,研究了薄膜电阻的变化。传感器对100 ppm、1000 ppm和1% O/sub 2/气体的响应分别为1.4、2.4和4.9。响应和恢复时间(t/sub 0.90%/)约为2分钟。
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引用次数: 0
Optical properties of interdiffused quantum well modulators 互扩散量子阱调制器的光学性质
E. Li, W. Choy
In this paper, the waveguide type and vertical type electro-absorptive diffused-quantum-well modulators will be reviewed. The contributions of interdiffusion of the quantum wells, which act as the active region of the modulator, to the performance of the modulator in terms of the operating wavelength, optical properties and the modulation strength. For waveguide type optical devices, the polarization independent optical properties including absorption coefficient and optical gain using interdiffusion will be discussed. As a consequence, with appropriate interdiffusion, the operating wavelength can be adjusted while the quality and optical properties of the quantum well can be improved for use of modulation devices.
本文对波导型和垂直型电吸收扩散量子阱调制器进行了综述。作为调制器有源区的量子阱的互扩散对调制器的工作波长、光学特性和调制强度的贡献。对于波导型光学器件,将讨论偏振无关的光学特性,包括吸收系数和光增益。因此,通过适当的互扩散,可以调整工作波长,同时可以改善量子阱的质量和光学性质,以便使用调制器件。
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引用次数: 0
High quality InGaAsP grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells 固体源分子束外延生长高品质的砷磷裂解细胞
W. Shi, D.H. Zhang, H. Zheng, S. Yoon, C. Kam
InGaAsP materials grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells are Investigated. The lattice-matched undoped In/sub 0.7/Ga/sub 0.3/As/sub 0.68/P/sub 0.32/ shows a strong emission spectrum peaking at 0.875 eV at room temperature with a full width at half maximum of 37.4 meV, good electrical properties and smooth surface. The incorporation efficiency of arsenic is found to be higher than that of phosphorous in almost all arsenic pressure, and can be described well by a polynomial expression with respect to the beam equivalent pressure ratio f/sub As//(f/sub As/+f/sub p/). The unintentionally doped layers grown at beam equivalent pressure ratios between 0.4 and 0.5 show high Hall mobility, low net carrier concentration and small surface roughness. Less and excess arsenic pressure is find to deteriorate the quality of the layers. It is also found that the materials grown at beam equivalent pressure ratios greater than 0.35 are all n-type at 77 K, but p-type for those grown below 0.35, indicating a strong amphoteric behaviour of carbon impurities.
研究了固体源分子束外延生长的InGaAsP材料。晶格匹配的未掺杂In/sub 0.7/Ga/sub 0.3/As/sub 0.68/P/sub 0.32/在室温下表现出0.875 eV的强发射光谱峰,全宽半峰为37.4 meV,电学性能良好,表面光滑。在几乎所有的砷压力下,砷的掺入效率都高于磷的掺入效率,并且可以用关于梁等效压力比f/sub As//(f/sub As/+f/sub p/)的多项式表达式很好地描述。在0.4 ~ 0.5的光束等效压力比下生长的非有意掺杂层表现出高霍尔迁移率、低净载流子浓度和小表面粗糙度。砷压力过低或过高会使层的质量恶化。在77 K时,当束当量压比大于0.35时生长的材料均为n型,而当束当量压比小于0.35时生长的材料均为p型,表明碳杂质具有较强的两性行为。
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引用次数: 0
Dielectric induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiple quantum wells by two step rapid thermal annealing In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As多量子阱的两步快速热退火介电诱导互扩散
Kyeongran Yoo, Y. Moon, Tae-Wan Lee, E. Yoon
A new scheme for the dielectric-induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MQWs was reported. The vacancy-generating chemical reaction of SiO/sub 2/ with an In/sub 0.53/Ga/sub 0.47/As capping layer was confined to the first-step rapid thermal annealing (RTA) time. After the generation of a fixed amount of vacancies during the first-step RTA, the dielectric layer was stripped off and subsequently the second-step RTA was made to interdiffuse the MQWs. It was found that the interdiffusion coefficients during the second-step RTA were constant and linearly proportional to the first-step RTA time.
本文报道了In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MQWs介电诱导互扩散的新方案。SiO/sub 2/与In/sub 0.53/Ga/sub 0.47/As盖层的空位生成化学反应受限于第一步快速热退火(RTA)时间。在第一步RTA过程中产生固定数量的空位后,剥离介电层,随后进行第二步RTA以使mqw相互扩散。结果表明,第二步RTA过程中的互扩散系数为常数,且与第一步RTA时间成线性关系。
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引用次数: 0
Infrared photodetectors operating at near room temperature 在接近室温下工作的红外光电探测器
Jozef Piotrowski, C. Musca, J. Dell, L. Faraone
Recent progress in the field of infrared photodetectors operating in the 3-16 /spl mu/m spectral range at near room-temperatures (200-300 K) is reported. The fundamental limits to performance of the devices are imposed by the statistical nature of thermal generation-recombination processes and related noise. The figure of merit of a material for photodetectors is the ratio of absorption coefficient to the volume generation rate, /spl alpha//G. Comparing various materials one can find that narrow bandgap semiconductors exhibit much higher /spl alpha//G than extrinsic materials. While HgCdTe remains the most important material for near room temperature infrared photodetectors, HgMnTe, HgZnTe, InAsSb and Tl-based III-V compounds are possible candidates to replace it. The performance of near room temperature infrared (NRTIR) photodetectors can be improved by reduction of the total rate of generation and recombination in the active region of the device. Various methods to achieve this are discussed including selection of semiconductor, non-equilibrium mode of operation, and elimination of parasitic thermal generation on surfaces and contacts. Further improvement can be obtained by reduction of the physical volume of the detector without reduction of the apparent "optical" area of the device by the use of optical concentrators and optically resonant cavities. Similar methods are applicable to cryogenically cooled detectors operating at very long wavelengths (16-30 /spl mu/m). Various practical NRTIR photodetectors are described, such as photoconductive, photoelectromagnetic and photovoltaic detectors. Photovoltaic devices are the most promising type of NRTIR, since they require no bias and exhibit no low frequency noise. However, conventional single junction photovoltaic detectors suffer from very low quantum efficiency and low resistance. These limitations can be removed with novel solutions based on multijunction heterostructures which are capable of achieving high performance in practice.
本文报道了近室温(200-300 K)下工作在3-16 /spl μ m光谱范围的红外探测器领域的最新进展。器件性能的基本限制是由热生成-复合过程的统计性质和相关噪声所施加的。用于光电探测器的材料的优点值是吸收系数与体积产生率的比值,/spl α //G。比较各种材料,可以发现窄带隙半导体比外源材料表现出更高的α //G。虽然HgCdTe仍然是近室温红外探测器最重要的材料,但HgMnTe, HgZnTe, InAsSb和tl基III-V化合物是可能取代它的候选材料。近室温红外(NRTIR)光电探测器的性能可以通过降低器件有源区的总产生率和复合率来提高。讨论了实现这一目标的各种方法,包括半导体的选择,非平衡操作模式,以及消除表面和接触上的寄生热产生。通过使用光学聚光器和光学谐振腔,可以在不减少器件表观“光学”面积的情况下减小探测器的物理体积,从而获得进一步的改进。类似的方法也适用于超长波长(16-30 /spl μ m)的低温冷却探测器。介绍了各种实用的NRTIR光电探测器,如光导、光电磁和光伏探测器。光伏器件是最有前途的NRTIR类型,因为它们不需要偏压,也没有低频噪声。然而,传统的单结光电探测器存在量子效率低、电阻低的问题。这些限制可以通过基于多结异质结构的新颖解决方案来消除,这些解决方案能够在实践中实现高性能。
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引用次数: 2
Metastable states and their resonant electron-phonon interaction of hydrogen-like donors in GaAs 砷化镓中类氢给体的亚稳态及其共振电子-声子相互作用
S. Shen, Zhanghai Chen, Zhonghui Chen
The FTIR photoconductivity measurements and theoretical comparison of the magnetic field induced metastable states of the hydrogen-like donors in GaAs are reported in this paper. The transitions from the ground bound Is state to the high-lying metastable states of Si donors are observed and identified. A simplified trial wave-function is applied to these high-lying metastable states and the variational calculations are in good agreement with our experimental data. The electron-phonon interaction related with the metastable states are investigated. Integrated energy spectra consist of the resonant magneto-polaron branches and the bound phonon branches, which corresponding to the multiple phonon process, are obtained for the first time.
本文报道了GaAs中类氢给体磁场诱导亚稳态的FTIR光电导率测量和理论比较。观察和鉴定了Si给体从基界的Is态到高亚稳态的转变。用简化的试波函数计算了这些高亚稳态,变分计算结果与实验数据吻合较好。研究了与亚稳态相关的电子-声子相互作用。首次获得了由共振磁极化子分支和束缚声子分支组成的综合能谱,与多声子过程相对应。
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引用次数: 0
Non-destructive extraction of structural parameters of fully-depleted SOI MOSFETs using subthreshold slope characteristics 基于亚阈值斜率特性的全耗尽SOI mosfet结构参数无损提取
H. Ito, K. Asada
In this paper we focus on non-destructive extraction method for the structural parameters of FD SOI MOSFETs using S-factor characteristics. We develop a simulator based on a one-dimensional model of the SOI MOSFET for analyzing the back gate characteristics. Parameters extracted by this method are in good agreement with parameters obtained from TEM observation. We evaluate results of this method by analyzing fitting errors and discuss its accuracy.
本文主要研究利用s因子特性无损提取FD SOI mosfet结构参数的方法。我们基于SOI MOSFET的一维模型开发了一个模拟器,用于分析其后门特性。该方法提取的参数与透射电镜观测得到的参数吻合较好。通过对拟合误差的分析来评价该方法的结果,并对其精度进行了讨论。
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引用次数: 1
Switching time measurements of GaAs/AlAs and InGaAs/AlAs resonant tunnelling diodes GaAs/AlAs和InGaAs/AlAs共振隧穿二极管的开关时间测量
C. Leung, M. Wintreert-Fouquet, D. Skellern
Resonant tunnelling diodes (RTDs) have attracted much interest because of their potential use for high frequency and high speed applications. An important study of RTDs is therefore to analyse the high speed switching time between stable states of a device. The rise time calculation technique described by Diamond et al. for simple pulse-forming circuits has been used to measure the high speed switching response of our RTDs. Two types of RTDs-GaAs/AlAs on GaAs, with alloyed GaAs(n/sup +/)ohmic contacts, and InGaAs/AlAs on InP, with non-alloyed InAs(n/sup +/)ohmic contacts were designed, fabricated, modelled and measured, With a peak current density of 20 kA/cm/sup 2/ and a Peak-to-Valley Ratio (PVR) of 4:1, the GaAs/AlAs RTD switching time is 20 ps. With a peak current density of 48 kA/cm/sup 2/ and PVR of 2:1, the InGaAs/AlAs RTD switching time is less than 5 ps, the limit of resolution of our measurement equipment. When compared with GaAs/AlAs RTDs, the In/sub 0.53/Ga/sub 0.47/As/AlAs material shows superior switching time performance. Our results are comparable to the best devices reported and are well suited for ultra-fast switching applications.
谐振隧穿二极管(rtd)因其在高频和高速应用中的潜在用途而引起了人们的广泛关注。因此,分析器件稳定状态之间的高速切换时间是rtd研究的一个重要内容。Diamond等人描述的用于简单脉冲形成电路的上升时间计算技术已用于测量我们的rtd的高速开关响应。在GaAs上设计、制作了合金GaAs(n/sup +/)欧姆接点和InP上非合金GaAs(n/sup +/)欧姆接点的两种类型的RTD -GaAs/AlAs,并对其进行了建模和测量。在峰值电流密度为20 kA/cm/sup 2/、峰谷比(PVR)为4:1的情况下,GaAs/AlAs RTD开关时间为20 ps;在峰值电流密度为48 kA/cm/sup 2/、PVR为2:1的情况下,InGaAs/AlAs RTD开关时间小于5 ps。我们的测量设备的分辨率极限。与GaAs/AlAs rtd相比,In/sub 0.53/Ga/sub 0.47/As/AlAs材料表现出优越的开关时间性能。我们的结果与目前报道的最佳器件相当,非常适合超快速开关应用。
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引用次数: 4
Heterostructure II-VI materials and devices for infrared imaging 异质结构II-VI材料及红外成像器件
R. Ashokan, S. Sivananthan
The recent developments in the II-VI heterostructure materials and devices for infrared imaging applications, with particular emphasize on molecular beam epitaxy and fabrication of double layer planar heterostructure devices are discussed. Quality of the CdTe layers grown on different substrate orientations are compared. The HgCdTe grown on CdTe/Si is shown to be comparable to that of HgCdTe/CdZnTe. State-of-the-Art performance of devices made on HgCdTe/CdTe/Si is demonstrated.
本文讨论了红外成像用II-VI异质结构材料和器件的最新进展,重点介绍了分子束外延和双层平面异质结构器件的制备。比较了在不同衬底取向上生长的碲化镉层的质量。在CdTe/Si上生长的HgCdTe与在CdZnTe / CdTe上生长的HgCdTe相当。展示了由HgCdTe/CdTe/Si制成的器件的最新性能。
{"title":"Heterostructure II-VI materials and devices for infrared imaging","authors":"R. Ashokan, S. Sivananthan","doi":"10.1109/COMMAD.1998.791591","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791591","url":null,"abstract":"The recent developments in the II-VI heterostructure materials and devices for infrared imaging applications, with particular emphasize on molecular beam epitaxy and fabrication of double layer planar heterostructure devices are discussed. Quality of the CdTe layers grown on different substrate orientations are compared. The HgCdTe grown on CdTe/Si is shown to be comparable to that of HgCdTe/CdZnTe. State-of-the-Art performance of devices made on HgCdTe/CdTe/Si is demonstrated.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"29 21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115133910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)
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