Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791606
M.J. Lodeer, B. Luther-Davies, H. Tan, C. Jagadish, M. Haimi, U. Siegner, U. Keller, J. Zou
We report a comprehensive study of the response times and nonlinear optical absorption modulation of Arsenic and Oxygen implanted GaAs for various doses and annealing conditions. Response times of 400 fs could be achieved with O-implantation whilst preserving 80% of the modulation depth of unimplanted GaAs. It was found that a relationship exists between modulation and recovery time which also marks the best possible performance, and which is independent of the implanted ion species. However, for doses large enough to cause amorphization this relationship is irreversibly broken.
{"title":"Nonlinear optical properties of ion-implanted GaAs","authors":"M.J. Lodeer, B. Luther-Davies, H. Tan, C. Jagadish, M. Haimi, U. Siegner, U. Keller, J. Zou","doi":"10.1109/COMMAD.1998.791606","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791606","url":null,"abstract":"We report a comprehensive study of the response times and nonlinear optical absorption modulation of Arsenic and Oxygen implanted GaAs for various doses and annealing conditions. Response times of 400 fs could be achieved with O-implantation whilst preserving 80% of the modulation depth of unimplanted GaAs. It was found that a relationship exists between modulation and recovery time which also marks the best possible performance, and which is independent of the implanted ion species. However, for doses large enough to cause amorphization this relationship is irreversibly broken.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131721709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791649
Y. Li, M. Atashbar, M. Ghantasala, W. Wlodarski, M. Austin
Titanium dioxide (TiO/sub 2/) thin films have been prepared using a nanosized TiO/sub 2/ suspension and a spin-coating process. The morphology, microstructure, crystalline structure and chemical composition of the TiO/sub 2/ thin films have been investigated using SEM, XRD, and RBS. SEM analysis showed that the films are smooth and uniform with an average particle size of 25 nm. The crystal structure of the films is a mixture of 70% anatase and 30% rutile phases. RBS characterisation has revealed that the film is sub-stoichiometric TiO/sub 2-n/. The variation of electrical resistance of the thin films has been examined at different oxygen concentrations from 1 ppm to 1%. The response of the sensor to 100 ppm, 1000 ppm, and 1% O/sub 2/ gas is 1.4, 2.4, and 4.9, respectively. The response and recovery times (t/sub 0.90%/) are about 2 minutes.
{"title":"Nanocrystalline TiO/sub 2/ thin films for O/sub 2/ gas sensing","authors":"Y. Li, M. Atashbar, M. Ghantasala, W. Wlodarski, M. Austin","doi":"10.1109/COMMAD.1998.791649","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791649","url":null,"abstract":"Titanium dioxide (TiO/sub 2/) thin films have been prepared using a nanosized TiO/sub 2/ suspension and a spin-coating process. The morphology, microstructure, crystalline structure and chemical composition of the TiO/sub 2/ thin films have been investigated using SEM, XRD, and RBS. SEM analysis showed that the films are smooth and uniform with an average particle size of 25 nm. The crystal structure of the films is a mixture of 70% anatase and 30% rutile phases. RBS characterisation has revealed that the film is sub-stoichiometric TiO/sub 2-n/. The variation of electrical resistance of the thin films has been examined at different oxygen concentrations from 1 ppm to 1%. The response of the sensor to 100 ppm, 1000 ppm, and 1% O/sub 2/ gas is 1.4, 2.4, and 4.9, respectively. The response and recovery times (t/sub 0.90%/) are about 2 minutes.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134634649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791586
E. Li, W. Choy
In this paper, the waveguide type and vertical type electro-absorptive diffused-quantum-well modulators will be reviewed. The contributions of interdiffusion of the quantum wells, which act as the active region of the modulator, to the performance of the modulator in terms of the operating wavelength, optical properties and the modulation strength. For waveguide type optical devices, the polarization independent optical properties including absorption coefficient and optical gain using interdiffusion will be discussed. As a consequence, with appropriate interdiffusion, the operating wavelength can be adjusted while the quality and optical properties of the quantum well can be improved for use of modulation devices.
{"title":"Optical properties of interdiffused quantum well modulators","authors":"E. Li, W. Choy","doi":"10.1109/COMMAD.1998.791586","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791586","url":null,"abstract":"In this paper, the waveguide type and vertical type electro-absorptive diffused-quantum-well modulators will be reviewed. The contributions of interdiffusion of the quantum wells, which act as the active region of the modulator, to the performance of the modulator in terms of the operating wavelength, optical properties and the modulation strength. For waveguide type optical devices, the polarization independent optical properties including absorption coefficient and optical gain using interdiffusion will be discussed. As a consequence, with appropriate interdiffusion, the operating wavelength can be adjusted while the quality and optical properties of the quantum well can be improved for use of modulation devices.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134342687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791657
W. Shi, D.H. Zhang, H. Zheng, S. Yoon, C. Kam
InGaAsP materials grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells are Investigated. The lattice-matched undoped In/sub 0.7/Ga/sub 0.3/As/sub 0.68/P/sub 0.32/ shows a strong emission spectrum peaking at 0.875 eV at room temperature with a full width at half maximum of 37.4 meV, good electrical properties and smooth surface. The incorporation efficiency of arsenic is found to be higher than that of phosphorous in almost all arsenic pressure, and can be described well by a polynomial expression with respect to the beam equivalent pressure ratio f/sub As//(f/sub As/+f/sub p/). The unintentionally doped layers grown at beam equivalent pressure ratios between 0.4 and 0.5 show high Hall mobility, low net carrier concentration and small surface roughness. Less and excess arsenic pressure is find to deteriorate the quality of the layers. It is also found that the materials grown at beam equivalent pressure ratios greater than 0.35 are all n-type at 77 K, but p-type for those grown below 0.35, indicating a strong amphoteric behaviour of carbon impurities.
{"title":"High quality InGaAsP grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells","authors":"W. Shi, D.H. Zhang, H. Zheng, S. Yoon, C. Kam","doi":"10.1109/COMMAD.1998.791657","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791657","url":null,"abstract":"InGaAsP materials grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells are Investigated. The lattice-matched undoped In/sub 0.7/Ga/sub 0.3/As/sub 0.68/P/sub 0.32/ shows a strong emission spectrum peaking at 0.875 eV at room temperature with a full width at half maximum of 37.4 meV, good electrical properties and smooth surface. The incorporation efficiency of arsenic is found to be higher than that of phosphorous in almost all arsenic pressure, and can be described well by a polynomial expression with respect to the beam equivalent pressure ratio f/sub As//(f/sub As/+f/sub p/). The unintentionally doped layers grown at beam equivalent pressure ratios between 0.4 and 0.5 show high Hall mobility, low net carrier concentration and small surface roughness. Less and excess arsenic pressure is find to deteriorate the quality of the layers. It is also found that the materials grown at beam equivalent pressure ratios greater than 0.35 are all n-type at 77 K, but p-type for those grown below 0.35, indicating a strong amphoteric behaviour of carbon impurities.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134511622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791617
Kyeongran Yoo, Y. Moon, Tae-Wan Lee, E. Yoon
A new scheme for the dielectric-induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MQWs was reported. The vacancy-generating chemical reaction of SiO/sub 2/ with an In/sub 0.53/Ga/sub 0.47/As capping layer was confined to the first-step rapid thermal annealing (RTA) time. After the generation of a fixed amount of vacancies during the first-step RTA, the dielectric layer was stripped off and subsequently the second-step RTA was made to interdiffuse the MQWs. It was found that the interdiffusion coefficients during the second-step RTA were constant and linearly proportional to the first-step RTA time.
{"title":"Dielectric induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiple quantum wells by two step rapid thermal annealing","authors":"Kyeongran Yoo, Y. Moon, Tae-Wan Lee, E. Yoon","doi":"10.1109/COMMAD.1998.791617","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791617","url":null,"abstract":"A new scheme for the dielectric-induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MQWs was reported. The vacancy-generating chemical reaction of SiO/sub 2/ with an In/sub 0.53/Ga/sub 0.47/As capping layer was confined to the first-step rapid thermal annealing (RTA) time. After the generation of a fixed amount of vacancies during the first-step RTA, the dielectric layer was stripped off and subsequently the second-step RTA was made to interdiffuse the MQWs. It was found that the interdiffusion coefficients during the second-step RTA were constant and linearly proportional to the first-step RTA time.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"358 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133232493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791599
Jozef Piotrowski, C. Musca, J. Dell, L. Faraone
Recent progress in the field of infrared photodetectors operating in the 3-16 /spl mu/m spectral range at near room-temperatures (200-300 K) is reported. The fundamental limits to performance of the devices are imposed by the statistical nature of thermal generation-recombination processes and related noise. The figure of merit of a material for photodetectors is the ratio of absorption coefficient to the volume generation rate, /spl alpha//G. Comparing various materials one can find that narrow bandgap semiconductors exhibit much higher /spl alpha//G than extrinsic materials. While HgCdTe remains the most important material for near room temperature infrared photodetectors, HgMnTe, HgZnTe, InAsSb and Tl-based III-V compounds are possible candidates to replace it. The performance of near room temperature infrared (NRTIR) photodetectors can be improved by reduction of the total rate of generation and recombination in the active region of the device. Various methods to achieve this are discussed including selection of semiconductor, non-equilibrium mode of operation, and elimination of parasitic thermal generation on surfaces and contacts. Further improvement can be obtained by reduction of the physical volume of the detector without reduction of the apparent "optical" area of the device by the use of optical concentrators and optically resonant cavities. Similar methods are applicable to cryogenically cooled detectors operating at very long wavelengths (16-30 /spl mu/m). Various practical NRTIR photodetectors are described, such as photoconductive, photoelectromagnetic and photovoltaic detectors. Photovoltaic devices are the most promising type of NRTIR, since they require no bias and exhibit no low frequency noise. However, conventional single junction photovoltaic detectors suffer from very low quantum efficiency and low resistance. These limitations can be removed with novel solutions based on multijunction heterostructures which are capable of achieving high performance in practice.
{"title":"Infrared photodetectors operating at near room temperature","authors":"Jozef Piotrowski, C. Musca, J. Dell, L. Faraone","doi":"10.1109/COMMAD.1998.791599","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791599","url":null,"abstract":"Recent progress in the field of infrared photodetectors operating in the 3-16 /spl mu/m spectral range at near room-temperatures (200-300 K) is reported. The fundamental limits to performance of the devices are imposed by the statistical nature of thermal generation-recombination processes and related noise. The figure of merit of a material for photodetectors is the ratio of absorption coefficient to the volume generation rate, /spl alpha//G. Comparing various materials one can find that narrow bandgap semiconductors exhibit much higher /spl alpha//G than extrinsic materials. While HgCdTe remains the most important material for near room temperature infrared photodetectors, HgMnTe, HgZnTe, InAsSb and Tl-based III-V compounds are possible candidates to replace it. The performance of near room temperature infrared (NRTIR) photodetectors can be improved by reduction of the total rate of generation and recombination in the active region of the device. Various methods to achieve this are discussed including selection of semiconductor, non-equilibrium mode of operation, and elimination of parasitic thermal generation on surfaces and contacts. Further improvement can be obtained by reduction of the physical volume of the detector without reduction of the apparent \"optical\" area of the device by the use of optical concentrators and optically resonant cavities. Similar methods are applicable to cryogenically cooled detectors operating at very long wavelengths (16-30 /spl mu/m). Various practical NRTIR photodetectors are described, such as photoconductive, photoelectromagnetic and photovoltaic detectors. Photovoltaic devices are the most promising type of NRTIR, since they require no bias and exhibit no low frequency noise. However, conventional single junction photovoltaic detectors suffer from very low quantum efficiency and low resistance. These limitations can be removed with novel solutions based on multijunction heterostructures which are capable of achieving high performance in practice.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133275030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791708
S. Shen, Zhanghai Chen, Zhonghui Chen
The FTIR photoconductivity measurements and theoretical comparison of the magnetic field induced metastable states of the hydrogen-like donors in GaAs are reported in this paper. The transitions from the ground bound Is state to the high-lying metastable states of Si donors are observed and identified. A simplified trial wave-function is applied to these high-lying metastable states and the variational calculations are in good agreement with our experimental data. The electron-phonon interaction related with the metastable states are investigated. Integrated energy spectra consist of the resonant magneto-polaron branches and the bound phonon branches, which corresponding to the multiple phonon process, are obtained for the first time.
{"title":"Metastable states and their resonant electron-phonon interaction of hydrogen-like donors in GaAs","authors":"S. Shen, Zhanghai Chen, Zhonghui Chen","doi":"10.1109/COMMAD.1998.791708","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791708","url":null,"abstract":"The FTIR photoconductivity measurements and theoretical comparison of the magnetic field induced metastable states of the hydrogen-like donors in GaAs are reported in this paper. The transitions from the ground bound Is state to the high-lying metastable states of Si donors are observed and identified. A simplified trial wave-function is applied to these high-lying metastable states and the variational calculations are in good agreement with our experimental data. The electron-phonon interaction related with the metastable states are investigated. Integrated energy spectra consist of the resonant magneto-polaron branches and the bound phonon branches, which corresponding to the multiple phonon process, are obtained for the first time.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131587974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791605
H. Ito, K. Asada
In this paper we focus on non-destructive extraction method for the structural parameters of FD SOI MOSFETs using S-factor characteristics. We develop a simulator based on a one-dimensional model of the SOI MOSFET for analyzing the back gate characteristics. Parameters extracted by this method are in good agreement with parameters obtained from TEM observation. We evaluate results of this method by analyzing fitting errors and discuss its accuracy.
本文主要研究利用s因子特性无损提取FD SOI mosfet结构参数的方法。我们基于SOI MOSFET的一维模型开发了一个模拟器，用于分析其后门特性。该方法提取的参数与透射电镜观测得到的参数吻合较好。通过对拟合误差的分析来评价该方法的结果，并对其精度进行了讨论。
{"title":"Non-destructive extraction of structural parameters of fully-depleted SOI MOSFETs using subthreshold slope characteristics","authors":"H. Ito, K. Asada","doi":"10.1109/COMMAD.1998.791605","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791605","url":null,"abstract":"In this paper we focus on non-destructive extraction method for the structural parameters of FD SOI MOSFETs using S-factor characteristics. We develop a simulator based on a one-dimensional model of the SOI MOSFET for analyzing the back gate characteristics. Parameters extracted by this method are in good agreement with parameters obtained from TEM observation. We evaluate results of this method by analyzing fitting errors and discuss its accuracy.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130501760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791604
C. Leung, M. Wintreert-Fouquet, D. Skellern
Resonant tunnelling diodes (RTDs) have attracted much interest because of their potential use for high frequency and high speed applications. An important study of RTDs is therefore to analyse the high speed switching time between stable states of a device. The rise time calculation technique described by Diamond et al. for simple pulse-forming circuits has been used to measure the high speed switching response of our RTDs. Two types of RTDs-GaAs/AlAs on GaAs, with alloyed GaAs(n/sup +/)ohmic contacts, and InGaAs/AlAs on InP, with non-alloyed InAs(n/sup +/)ohmic contacts were designed, fabricated, modelled and measured, With a peak current density of 20 kA/cm/sup 2/ and a Peak-to-Valley Ratio (PVR) of 4:1, the GaAs/AlAs RTD switching time is 20 ps. With a peak current density of 48 kA/cm/sup 2/ and PVR of 2:1, the InGaAs/AlAs RTD switching time is less than 5 ps, the limit of resolution of our measurement equipment. When compared with GaAs/AlAs RTDs, the In/sub 0.53/Ga/sub 0.47/As/AlAs material shows superior switching time performance. Our results are comparable to the best devices reported and are well suited for ultra-fast switching applications.
{"title":"Switching time measurements of GaAs/AlAs and InGaAs/AlAs resonant tunnelling diodes","authors":"C. Leung, M. Wintreert-Fouquet, D. Skellern","doi":"10.1109/COMMAD.1998.791604","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791604","url":null,"abstract":"Resonant tunnelling diodes (RTDs) have attracted much interest because of their potential use for high frequency and high speed applications. An important study of RTDs is therefore to analyse the high speed switching time between stable states of a device. The rise time calculation technique described by Diamond et al. for simple pulse-forming circuits has been used to measure the high speed switching response of our RTDs. Two types of RTDs-GaAs/AlAs on GaAs, with alloyed GaAs(n/sup +/)ohmic contacts, and InGaAs/AlAs on InP, with non-alloyed InAs(n/sup +/)ohmic contacts were designed, fabricated, modelled and measured, With a peak current density of 20 kA/cm/sup 2/ and a Peak-to-Valley Ratio (PVR) of 4:1, the GaAs/AlAs RTD switching time is 20 ps. With a peak current density of 48 kA/cm/sup 2/ and PVR of 2:1, the InGaAs/AlAs RTD switching time is less than 5 ps, the limit of resolution of our measurement equipment. When compared with GaAs/AlAs RTDs, the In/sub 0.53/Ga/sub 0.47/As/AlAs material shows superior switching time performance. Our results are comparable to the best devices reported and are well suited for ultra-fast switching applications.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122214098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791591
R. Ashokan, S. Sivananthan
The recent developments in the II-VI heterostructure materials and devices for infrared imaging applications, with particular emphasize on molecular beam epitaxy and fabrication of double layer planar heterostructure devices are discussed. Quality of the CdTe layers grown on different substrate orientations are compared. The HgCdTe grown on CdTe/Si is shown to be comparable to that of HgCdTe/CdZnTe. State-of-the-Art performance of devices made on HgCdTe/CdTe/Si is demonstrated.
{"title":"Heterostructure II-VI materials and devices for infrared imaging","authors":"R. Ashokan, S. Sivananthan","doi":"10.1109/COMMAD.1998.791591","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791591","url":null,"abstract":"The recent developments in the II-VI heterostructure materials and devices for infrared imaging applications, with particular emphasize on molecular beam epitaxy and fabrication of double layer planar heterostructure devices are discussed. Quality of the CdTe layers grown on different substrate orientations are compared. The HgCdTe grown on CdTe/Si is shown to be comparable to that of HgCdTe/CdZnTe. State-of-the-Art performance of devices made on HgCdTe/CdTe/Si is demonstrated.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"29 21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115133910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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