Pub Date : 2013-06-03DOI: 10.1109/EDSSC.2013.6628226
D. Shan, Dedong Han, F. Huang, Yu Tian, Suoming Zhang, Y. Cong, Yi Wang, Lifeng Liu, Xing Zhang, Shengdong Zhang
Fully transparent Aluminum-doped zinc oxide (AZO) thin-film transistors (TFTs) were fabricated using radio frequency sputtering at room temperature. To ensure transparency, the AZO-TFTs were fabricated on glass substrate, with SiO2 as gate insulator. Indium tin oxide (ITO) was adopted as gate and source/drain electrodes. The electrical characteristics of AZO-TFT were investigated by IDS-VDS and IDS-VGS measurements, excellent electrical properties were obtained. Furthermore, we researched the post-annealing effects on characteristics of AZO-TFT.
{"title":"Fabrication and characteristics of fully transparent Aluminum-doped zinc oxide thin-film transistors","authors":"D. Shan, Dedong Han, F. Huang, Yu Tian, Suoming Zhang, Y. Cong, Yi Wang, Lifeng Liu, Xing Zhang, Shengdong Zhang","doi":"10.1109/EDSSC.2013.6628226","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628226","url":null,"abstract":"Fully transparent Aluminum-doped zinc oxide (AZO) thin-film transistors (TFTs) were fabricated using radio frequency sputtering at room temperature. To ensure transparency, the AZO-TFTs were fabricated on glass substrate, with SiO2 as gate insulator. Indium tin oxide (ITO) was adopted as gate and source/drain electrodes. The electrical characteristics of AZO-TFT were investigated by IDS-VDS and IDS-VGS measurements, excellent electrical properties were obtained. Furthermore, we researched the post-annealing effects on characteristics of AZO-TFT.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121676559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-03DOI: 10.1109/EDSSC.2013.6628077
Jun Shi, Lianming Li, T. Cui
This paper presents a 60 GHz broadband Gilbert-cell down conversion mixer in a 65 nm CMOS. To enhance the mixer gain, bandwidth, and noise performance, an inter-stage inductor is introduced between the switching pair and the transconductance stage. Driven by a 48 GHz 0-dBm LO, the mixer achieves a conversion gain of 14 dB. The measured IF 3dB bandwidth is about 4GHz and the input 1dB compression point is about -10dBm. Besides, simulation results show that the noise figure is lower than 12 dB and the input referred IP3 point is about 2.5 dBm. The mixer draws 11mA (Gilbert-cell) and 21mA (IF buffer) from a 1.2V supply.
{"title":"A 60-GHz broadband Gilbert-cell down conversion mixer in a 65-nm CMOS","authors":"Jun Shi, Lianming Li, T. Cui","doi":"10.1109/EDSSC.2013.6628077","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628077","url":null,"abstract":"This paper presents a 60 GHz broadband Gilbert-cell down conversion mixer in a 65 nm CMOS. To enhance the mixer gain, bandwidth, and noise performance, an inter-stage inductor is introduced between the switching pair and the transconductance stage. Driven by a 48 GHz 0-dBm LO, the mixer achieves a conversion gain of 14 dB. The measured IF 3dB bandwidth is about 4GHz and the input 1dB compression point is about -10dBm. Besides, simulation results show that the noise figure is lower than 12 dB and the input referred IP3 point is about 2.5 dBm. The mixer draws 11mA (Gilbert-cell) and 21mA (IF buffer) from a 1.2V supply.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125247028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-03DOI: 10.1109/EDSSC.2013.6628160
Zhihua Wang, Kai Yang, Wan Wang, Hanjun Jiang, Shouhao Wu, Qingliang Lin, Wen Jia
This paper proposes a wireless healthcare system architecture that uses a wearable smart sensor to record the body sounds for health monitoring and diagnosis, which can prevent the damage to human bodies by those diagnosis instruments with active energy transmission such as X-ray detection and ultrasonic monitoring. A typical implementation of heart sound monitoring sensor is presented. The designed sensor records the heart beat sounds that can be used for real-time and long-term heart rate monitoring.
{"title":"Sound monitoring based wireless healthcare and a typical implmenation for heart rate monitoring","authors":"Zhihua Wang, Kai Yang, Wan Wang, Hanjun Jiang, Shouhao Wu, Qingliang Lin, Wen Jia","doi":"10.1109/EDSSC.2013.6628160","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628160","url":null,"abstract":"This paper proposes a wireless healthcare system architecture that uses a wearable smart sensor to record the body sounds for health monitoring and diagnosis, which can prevent the damage to human bodies by those diagnosis instruments with active energy transmission such as X-ray detection and ultrasonic monitoring. A typical implementation of heart sound monitoring sensor is presented. The designed sensor records the heart beat sounds that can be used for real-time and long-term heart rate monitoring.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124167045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-03DOI: 10.1109/EDSSC.2013.6628220
Shaoxun Li, Chun Zhang, Yingying Wang, Qi Peng
In this paper, a UHF RFID reader baseband for multi-protocol with universal transmitter is present. A universal transmitter is proposed that can support all of the coding method of UHF RFID, except that a MCU of DW8051core and some supported module are included in the chip. It provides flexible choice for users to select coding method and data rate by set the related control registers. The UHF RFID Reader IC is fabricated in 0.18μm CMOS technology. The area of digital part on the right of IC is 4.4mm2. EDA tool Synopsys PrimeTime PX has been exploited for power consumption estimation with post-layout netlist, which shows that the digital baseband consumes an average power of 4.9μW (1.8V) over a succession of receiving a sequence of response. The power will rise up to 220μW (1.8V), when containing the memory part.
{"title":"A UHF RFID reader baseband for multi-protocol with universal transmitter","authors":"Shaoxun Li, Chun Zhang, Yingying Wang, Qi Peng","doi":"10.1109/EDSSC.2013.6628220","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628220","url":null,"abstract":"In this paper, a UHF RFID reader baseband for multi-protocol with universal transmitter is present. A universal transmitter is proposed that can support all of the coding method of UHF RFID, except that a MCU of DW8051core and some supported module are included in the chip. It provides flexible choice for users to select coding method and data rate by set the related control registers. The UHF RFID Reader IC is fabricated in 0.18μm CMOS technology. The area of digital part on the right of IC is 4.4mm2. EDA tool Synopsys PrimeTime PX has been exploited for power consumption estimation with post-layout netlist, which shows that the digital baseband consumes an average power of 4.9μW (1.8V) over a succession of receiving a sequence of response. The power will rise up to 220μW (1.8V), when containing the memory part.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128185758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-03DOI: 10.1109/EDSSC.2013.6628098
Chang Qi, Xiaojun Xia, Xinzhi Shi, Ye Shuangli, Jinguang Jiang
An equivalent circuit thermal model is established based on quantum cascade laser(QCL) two-level rate equation by analyzing the gain characteristic depend on the temperature in active region. The model enables the analysis of the thermal characteristics of intermediate infrared QCL using general circuit analysis software such as PSPICE. The simulation results are in agreement with reported theoretical and experimental data. That proves the practicality and accuracy of the model.
{"title":"Circuit-level thermal model of intermediate infrared quantum cascade lasers","authors":"Chang Qi, Xiaojun Xia, Xinzhi Shi, Ye Shuangli, Jinguang Jiang","doi":"10.1109/EDSSC.2013.6628098","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628098","url":null,"abstract":"An equivalent circuit thermal model is established based on quantum cascade laser(QCL) two-level rate equation by analyzing the gain characteristic depend on the temperature in active region. The model enables the analysis of the thermal characteristics of intermediate infrared QCL using general circuit analysis software such as PSPICE. The simulation results are in agreement with reported theoretical and experimental data. That proves the practicality and accuracy of the model.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130496791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-03DOI: 10.1109/EDSSC.2013.6628204
A. Zjajo
This paper reports design, efficiency and measurement results of time interleaved sample and hold circuit based on closed loop switched capacitor technique. The prototype sample and hold with 84 dB dynamic range at 120 MS/s has been fabricated in standard single poly, six metal 90 nm CMOS, consumes only 8 mW at 1.2 V power supply and measures 0.22 mm2.
{"title":"A 1.2V 84dB 8mW time-interleaved sample and hold circuit in 90 nm CMOS","authors":"A. Zjajo","doi":"10.1109/EDSSC.2013.6628204","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628204","url":null,"abstract":"This paper reports design, efficiency and measurement results of time interleaved sample and hold circuit based on closed loop switched capacitor technique. The prototype sample and hold with 84 dB dynamic range at 120 MS/s has been fabricated in standard single poly, six metal 90 nm CMOS, consumes only 8 mW at 1.2 V power supply and measures 0.22 mm2.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128776638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-03DOI: 10.1109/EDSSC.2013.6628205
Gaobo Xu, Qiuxia Xu, H. Yin, Huajie Zhou, Tao Yang, J. Niu, Lingkuan Meng, Xiaobin He, Guilei Wang, Yu Jiahan, Dahai Wang, Junfeng Li, Jiang Yan, Chao Zhao, Dapeng Chen
HfSiON gate dielectric with equivalent oxide thickness of 10Å was prepared by reactive sputtering. It exhibits good physical and electrical characteristics, including good thermal stability up to 900°C, high dielectric constant and low gate leakage current. It was integrated with TaN metal gate in a novel gate-last process flow to fabricate NMOSFET. In the process, poly-silicon was deposited on HfSiON gate dielectric as dummy gate and replaced by TaN metal gate after source/drain formation. Because of the metal gate formation after the ion-implant doping activation at high temperature, HfSiON/TaN NMOSFET with good driving ability and excellent sub-threshold characteristics was fabricated.
{"title":"High-quality HfSiON gate dielectric and its application in a gate-last NMOSFET fabrication","authors":"Gaobo Xu, Qiuxia Xu, H. Yin, Huajie Zhou, Tao Yang, J. Niu, Lingkuan Meng, Xiaobin He, Guilei Wang, Yu Jiahan, Dahai Wang, Junfeng Li, Jiang Yan, Chao Zhao, Dapeng Chen","doi":"10.1109/EDSSC.2013.6628205","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628205","url":null,"abstract":"HfSiON gate dielectric with equivalent oxide thickness of 10Å was prepared by reactive sputtering. It exhibits good physical and electrical characteristics, including good thermal stability up to 900°C, high dielectric constant and low gate leakage current. It was integrated with TaN metal gate in a novel gate-last process flow to fabricate NMOSFET. In the process, poly-silicon was deposited on HfSiON gate dielectric as dummy gate and replaced by TaN metal gate after source/drain formation. Because of the metal gate formation after the ion-implant doping activation at high temperature, HfSiON/TaN NMOSFET with good driving ability and excellent sub-threshold characteristics was fabricated.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125321087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-03DOI: 10.1109/EDSSC.2013.6628054
Y. Liu, J. Yu, F. Cai, W. Tang, P. Lai
In this work, we investigate the static and dynamic gas response of Schottky diode based hydrogen sensor employing a Pt/WO3/n-type Si configuration. The role and importance of tungsten trioxide as an insulating layer within the device is discussed with respect to the measured electronic properties. The WO3 thin films were deposited using RF reactive magnetron sputtering. The surface morphology was studied by an atomic force microscopy (AFM) and the scan results indicated a smooth film with a roughness of 0.18 Å. From the X-ray photoelectron spectroscopy (XPS) characterization, it can be confirmed that the films were stoichiometric WO3 with a thickness of about 4 nm (as measured by an ellipsometer). The I-V characteristics and dynamic response with respect to H2 gas were measured at elevated temperatures from 50°C to 150°C and the results indicate that the H2 sensitivity of this device can exceed approximately 1000 % with an average response time of less than 10 seconds. We discuss and explain these observations in terms of current transportation mechanisms using the thermionic emission model and the change in the Schottky barrier height.
{"title":"A novel hydrogen sensor based on Pt/WO3/Si MIS Schottky diode","authors":"Y. Liu, J. Yu, F. Cai, W. Tang, P. Lai","doi":"10.1109/EDSSC.2013.6628054","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628054","url":null,"abstract":"In this work, we investigate the static and dynamic gas response of Schottky diode based hydrogen sensor employing a Pt/WO3/n-type Si configuration. The role and importance of tungsten trioxide as an insulating layer within the device is discussed with respect to the measured electronic properties. The WO3 thin films were deposited using RF reactive magnetron sputtering. The surface morphology was studied by an atomic force microscopy (AFM) and the scan results indicated a smooth film with a roughness of 0.18 Å. From the X-ray photoelectron spectroscopy (XPS) characterization, it can be confirmed that the films were stoichiometric WO3 with a thickness of about 4 nm (as measured by an ellipsometer). The I-V characteristics and dynamic response with respect to H2 gas were measured at elevated temperatures from 50°C to 150°C and the results indicate that the H2 sensitivity of this device can exceed approximately 1000 % with an average response time of less than 10 seconds. We discuss and explain these observations in terms of current transportation mechanisms using the thermionic emission model and the change in the Schottky barrier height.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128660212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-03DOI: 10.1109/EDSSC.2013.6628167
P. Sirinamaratana, E. Leelarasmee
A DC series connection of photo-voltaic panels in Solar with the converter can b e treated as forming a DC loop. This allows AC current signal to flow and become carrier for data transmission. Circuits that implement this approach are presented. This technique does not require additional wires or radio frequency link.
{"title":"Circuits for data communication through DC power line in solar farm","authors":"P. Sirinamaratana, E. Leelarasmee","doi":"10.1109/EDSSC.2013.6628167","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628167","url":null,"abstract":"A DC series connection of photo-voltaic panels in Solar with the converter can b e treated as forming a DC loop. This allows AC current signal to flow and become carrier for data transmission. Circuits that implement this approach are presented. This technique does not require additional wires or radio frequency link.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125751072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-03DOI: 10.1109/EDSSC.2013.6628238
Vikash Kumar, A. Aminulloh, Shao-Ming Yang, G. Sheu
A circuit analysis is introduced to detect the value of the substrate resistance and the capacitance, which is mainly caused by p-n junction diode. The effect of the substrate resistance on RF application is reported in this paper. When trench number increases the substrate resistance decreases. Effect of the inductance on the capacitor is also investigated. The inductance should be low value in the high frequency range to minimize inductance effect for Radio Frequency (RF) application. A two-port admittance parameter is used to extract the value of capacitance, inductance and substrate resistance.
{"title":"Investigation of substrate resistance and inductance on deep trench capacitor for RF application","authors":"Vikash Kumar, A. Aminulloh, Shao-Ming Yang, G. Sheu","doi":"10.1109/EDSSC.2013.6628238","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628238","url":null,"abstract":"A circuit analysis is introduced to detect the value of the substrate resistance and the capacitance, which is mainly caused by p-n junction diode. The effect of the substrate resistance on RF application is reported in this paper. When trench number increases the substrate resistance decreases. Effect of the inductance on the capacitor is also investigated. The inductance should be low value in the high frequency range to minimize inductance effect for Radio Frequency (RF) application. A two-port admittance parameter is used to extract the value of capacitance, inductance and substrate resistance.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125965903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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