Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770441
Avtar Singh, S. Chaudhury, C. Sarkar, I. Hussain, A. Ganguly
An effective way to get multiple threshold voltage modulation scheme in Silicon nano tube FET combining unbalanced halo doping is proposed and verified by 3D TCAD Simulator. The typical choice to accomplish multiple threshold voltages is by choosing the appropriate gate work-function for each device. But this results in higher process complexity. In this report we demonstrate the multiple Vtsolution for Si-NTFET at 14 nm technology node. Using HALO at source side, the simulated DIBL (Drain induced Barrier Lowering)characteristics shows notable improvement.
{"title":"A Multi Vt Approach for Silicon Nanotube FET with Halo Implantation for Improved DIBL","authors":"Avtar Singh, S. Chaudhury, C. Sarkar, I. Hussain, A. Ganguly","doi":"10.1109/EDKCON.2018.8770441","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770441","url":null,"abstract":"An effective way to get multiple threshold voltage modulation scheme in Silicon nano tube FET combining unbalanced halo doping is proposed and verified by 3D TCAD Simulator. The typical choice to accomplish multiple threshold voltages is by choosing the appropriate gate work-function for each device. But this results in higher process complexity. In this report we demonstrate the multiple Vtsolution for Si-NTFET at 14 nm technology node. Using HALO at source side, the simulated DIBL (Drain induced Barrier Lowering)characteristics shows notable improvement.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126976140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770445
K. Srinivasa Rao, G. V. Ganesh, K. Girija Sravani
In this paper, we have designed a Distributed MEMS Transmission line (DMTL) based Tunable Band Pass Filter. DMTL is a coplanar waveguide (CPW) periodically loaded with continuously-variable MEMS capacitors. We have proposed two types of switches i.e. fixed-fixed type and cantilever type which are designed by FEM Tool. We have optimized the RF MEMS Switches and each switch is simulated. Fixed-fixed switch has the Spring constant of 26.73 N/m, pull-in voltage of 15V, switching time of. 38ns, up and down state capacitances of 0.142 pf,4.05 pF, return losses is in the range of -.005 to −.035dB, and insertion losses is in the range of −11 to −24dB. Series cantilever switch has the spring constant of 6.42 N/m, pull-in voltage of 26V, switching time of 110μs, up and down state capacitances of. 02 fF,.24 pF, return losses is in the range of −.007 to −.011dB, and insertion losses in the range of −5 to −70dB. The electromagnetic simulation of the filter has been carried out with the help of HFSS without switch, the center frequency is obtained at 1GHz, and an insertion loss of nearly −5dB. When these switches are integrating with CPW transmission line to get tuning of both the center frequency and bandwidth, the filter operates at the UHF and L band (frequency range of. 1-3GHz). Within the tuning range the filter has the insertion loss of less than 5dB which is always required.
{"title":"Design and Analysis of Distributed MEMS Transmission Line (DMTL) based Tunable Band Pass Filter","authors":"K. Srinivasa Rao, G. V. Ganesh, K. Girija Sravani","doi":"10.1109/EDKCON.2018.8770445","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770445","url":null,"abstract":"In this paper, we have designed a Distributed MEMS Transmission line (DMTL) based Tunable Band Pass Filter. DMTL is a coplanar waveguide (CPW) periodically loaded with continuously-variable MEMS capacitors. We have proposed two types of switches i.e. fixed-fixed type and cantilever type which are designed by FEM Tool. We have optimized the RF MEMS Switches and each switch is simulated. Fixed-fixed switch has the Spring constant of 26.73 N/m, pull-in voltage of 15V, switching time of. 38ns, up and down state capacitances of 0.142 pf,4.05 pF, return losses is in the range of -.005 to −.035dB, and insertion losses is in the range of −11 to −24dB. Series cantilever switch has the spring constant of 6.42 N/m, pull-in voltage of 26V, switching time of 110μs, up and down state capacitances of. 02 fF,.24 pF, return losses is in the range of −.007 to −.011dB, and insertion losses in the range of −5 to −70dB. The electromagnetic simulation of the filter has been carried out with the help of HFSS without switch, the center frequency is obtained at 1GHz, and an insertion loss of nearly −5dB. When these switches are integrating with CPW transmission line to get tuning of both the center frequency and bandwidth, the filter operates at the UHF and L band (frequency range of. 1-3GHz). Within the tuning range the filter has the insertion loss of less than 5dB which is always required.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"3 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121016089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770423
N. Sahoo, S. Palo, A. K. Panda, T. Sahu
We study the effect of inter-subband interaction on nonlinear electron mobility $mu$ in asymmetric $AlGaAs$ parabolic double quantum well structure. We take into account the ionized impurity $(imp-)$ and alloy disorder $(al-)$ scatterings for calculation of $mu$. We keep well width $w2$ towards the surface side fixed and vary $mu$ with well width $w1$ along the substrate. The mobility $mu$ enhances with $w1$. As $w1$ increases, there is a change in the number of subbands occupied, i.e., single, double and again single. When double subband occupied the inter-subband interaction induces nonlinear behavior of $mu$ as a function of $w1$. This is due to the cusp like the fluctuation of $imp-$ and $al-$ intersubband scattering rate matrix elements.
{"title":"Effect of Intersubband Interaction on Non-Linear Electron Mobility in Asymmetric AlGaAs Parabolic Double Quantum Well Structure","authors":"N. Sahoo, S. Palo, A. K. Panda, T. Sahu","doi":"10.1109/EDKCON.2018.8770423","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770423","url":null,"abstract":"We study the effect of inter-subband interaction on nonlinear electron mobility <tex>$mu$</tex> in asymmetric <tex>$AlGaAs$</tex> parabolic double quantum well structure. We take into account the ionized impurity <tex>$(imp-)$</tex> and alloy disorder <tex>$(al-)$</tex> scatterings for calculation of <tex>$mu$</tex>. We keep well width <tex>$w2$</tex> towards the surface side fixed and vary <tex>$mu$</tex> with well width <tex>$w1$</tex> along the substrate. The mobility <tex>$mu$</tex> enhances with <tex>$w1$</tex>. As <tex>$w1$</tex> increases, there is a change in the number of subbands occupied, i.e., single, double and again single. When double subband occupied the inter-subband interaction induces nonlinear behavior of <tex>$mu$</tex> as a function of <tex>$w1$</tex>. This is due to the cusp like the fluctuation of <tex>$imp-$</tex> and <tex>$al-$</tex> intersubband scattering rate matrix elements.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128401068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770459
A. Adhikari, A. Roy
Electromigration-induced resistance change carries lot of information about the failure phenomenon and is an important aspect of the degradation process. Hence modeling electromigration-induced resistance degradation is of paramount importance, especially for submicron dual-damascene Cu interconnects. On the other hand, Markov model is extensively used in reliability engineering. This study focuses on the nature of the time-domain discrete states in the failure process. We argue about the memoryless discrete states in Markovian model to predict the electromigration-induced resistance degradation. The physics behind the electromigration failure does not support the application of Markovian model in electromigration and the inadequacy of such application is described. In contrast to the memoryless states, the resistance change behavior can be better explained by considering very generic and dependent discrete states. Whenever required, simulations are performed to obtain the resistance change behaviors. Our findings are concurrence with the experimental observations.
{"title":"Inadequacy of Markov Model in Modeling of Electromigration-Induced Resistance Degradation","authors":"A. Adhikari, A. Roy","doi":"10.1109/EDKCON.2018.8770459","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770459","url":null,"abstract":"Electromigration-induced resistance change carries lot of information about the failure phenomenon and is an important aspect of the degradation process. Hence modeling electromigration-induced resistance degradation is of paramount importance, especially for submicron dual-damascene Cu interconnects. On the other hand, Markov model is extensively used in reliability engineering. This study focuses on the nature of the time-domain discrete states in the failure process. We argue about the memoryless discrete states in Markovian model to predict the electromigration-induced resistance degradation. The physics behind the electromigration failure does not support the application of Markovian model in electromigration and the inadequacy of such application is described. In contrast to the memoryless states, the resistance change behavior can be better explained by considering very generic and dependent discrete states. Whenever required, simulations are performed to obtain the resistance change behaviors. Our findings are concurrence with the experimental observations.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129001039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770498
D. Mishra, K. Agrawal, R. S. Yadav, Tanuja Pande, N. K. Shukla
Robotics always used to have an extraordinary contribution into multiple parts of operations in process industries such as oil and gas industries, the one presently discussed in this research paper deals with the mathematical analysis and real-time replication model of out pipe crawler robot used for thickness measurement of ferromagnetic pipelines in petrochemical plants and refineries. The aim of this paper is to evaluate and simulate the movement of the robot in a 2-dimensional plane over a black track motif as a pipeline line which infers the effect of real-time simulation prototype model. The analysis presented in this paper is very useful in developing a mathematical model and crafting a prototype of wheelbase mobile robot to traverse over an uneven surface of ferromagnetic pipelines with the help of an array of IR sensors used for estimation of the thickness of pipes.
{"title":"Mathematical Analysis & Simulation for Designing Two Dimensional Out Pipe Crawler for Oil Industry","authors":"D. Mishra, K. Agrawal, R. S. Yadav, Tanuja Pande, N. K. Shukla","doi":"10.1109/EDKCON.2018.8770498","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770498","url":null,"abstract":"Robotics always used to have an extraordinary contribution into multiple parts of operations in process industries such as oil and gas industries, the one presently discussed in this research paper deals with the mathematical analysis and real-time replication model of out pipe crawler robot used for thickness measurement of ferromagnetic pipelines in petrochemical plants and refineries. The aim of this paper is to evaluate and simulate the movement of the robot in a 2-dimensional plane over a black track motif as a pipeline line which infers the effect of real-time simulation prototype model. The analysis presented in this paper is very useful in developing a mathematical model and crafting a prototype of wheelbase mobile robot to traverse over an uneven surface of ferromagnetic pipelines with the help of an array of IR sensors used for estimation of the thickness of pipes.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130719420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770452
Mithun Maity, A. Maiti, S. Gangopadhyay, Himadri S. Mandal
Employing the simple power series expression for fundamental modal field by Chebyshev technique, we report investigation of the effective core area and index of refraction of single mode graded index fiber in presence of Kerr nonlinearity. In this context, we apply iterative method in order to take care of the concerned nonlinearity. Taking some typical step and parabolic index fibers as examples, we show that the results found by our formalism agree excellently with the available exact results which can be obtained rigorously by applying finite element technique. The execution of our formalism requires little computation. Thus our formalism can be treated as a simple but accurate alternative to the complicated methods available in literature. Thus the prescribed simple formalism will prove user friendly for the system engineers in respect of judicious selection of this kind of fiber from the standpoint of minimisation of modal noise due to nonlinearity.
{"title":"Prediction of Effective Core Area and Index of Refraction of Single-Mode Graded Index Fiber in Presence of Kerr Nonlinearity","authors":"Mithun Maity, A. Maiti, S. Gangopadhyay, Himadri S. Mandal","doi":"10.1109/EDKCON.2018.8770452","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770452","url":null,"abstract":"Employing the simple power series expression for fundamental modal field by Chebyshev technique, we report investigation of the effective core area and index of refraction of single mode graded index fiber in presence of Kerr nonlinearity. In this context, we apply iterative method in order to take care of the concerned nonlinearity. Taking some typical step and parabolic index fibers as examples, we show that the results found by our formalism agree excellently with the available exact results which can be obtained rigorously by applying finite element technique. The execution of our formalism requires little computation. Thus our formalism can be treated as a simple but accurate alternative to the complicated methods available in literature. Thus the prescribed simple formalism will prove user friendly for the system engineers in respect of judicious selection of this kind of fiber from the standpoint of minimisation of modal noise due to nonlinearity.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123664985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770501
K. Raghuwanshi, Prachi Sanvale, Kratika Sharma, V. Neema, Praveen Singh
The aggressive scaling of the CMOS technology has made negative bias temperature instability (NBTI) a key concern in device reliability. The NBTI effect increases the threshold voltage $(V_{th})$ and decreases the drain current of PMOS with time. This paper present a Run time $V_{th}$ extraction based NBTI sensor to mitigate the aging effect. Here a close loop system is proposed to compensate the degradation in performance parameter of 6T SRAM cell. The proposed model consists of four modules such as run-time threshold voltage extractor module(aging sensor), voltage generator module, decision making module and transistor width auto-resizer module. All the modules are designed and investigated using PTM 45nm CMOS technology. Circuit level simulation on SRAM cell are performed in pre and post stress condition for 6 years of NBTI effect. The simulation result shows that the threshold voltage is increased by 14.77% which in turn degrades the drain current by 12.8% in 6 year of NBTI effect. Simulation result also shows that the Read SNM and Hold SNM are decreased by 18.59% and 2.97% and Write SNM is increased by 1.6% in 6 year of NBTI stress. It is observed that the proposed sensor increases the drain current to its actual value by just oversizing the width of NBTI affected PMOS transistor by 35.8% and mitigate the effect of NBTI on SRAM cell.
{"title":"Run Time $V_{th}$ Extraction Based On-Chip NBTI Mitigation Sensor for 6T SRAM Cell","authors":"K. Raghuwanshi, Prachi Sanvale, Kratika Sharma, V. Neema, Praveen Singh","doi":"10.1109/EDKCON.2018.8770501","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770501","url":null,"abstract":"The aggressive scaling of the CMOS technology has made negative bias temperature instability (NBTI) a key concern in device reliability. The NBTI effect increases the threshold voltage $(V_{th})$ and decreases the drain current of PMOS with time. This paper present a Run time $V_{th}$ extraction based NBTI sensor to mitigate the aging effect. Here a close loop system is proposed to compensate the degradation in performance parameter of 6T SRAM cell. The proposed model consists of four modules such as run-time threshold voltage extractor module(aging sensor), voltage generator module, decision making module and transistor width auto-resizer module. All the modules are designed and investigated using PTM 45nm CMOS technology. Circuit level simulation on SRAM cell are performed in pre and post stress condition for 6 years of NBTI effect. The simulation result shows that the threshold voltage is increased by 14.77% which in turn degrades the drain current by 12.8% in 6 year of NBTI effect. Simulation result also shows that the Read SNM and Hold SNM are decreased by 18.59% and 2.97% and Write SNM is increased by 1.6% in 6 year of NBTI stress. It is observed that the proposed sensor increases the drain current to its actual value by just oversizing the width of NBTI affected PMOS transistor by 35.8% and mitigate the effect of NBTI on SRAM cell.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128646108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770511
Chaiti Kumar, Sweta Chatterjee, A. Ghosh, Sachindranath Das, S. N. Patra
Dye-sensitized solar cells (DSSCs) are plausible alternative compared to the most traditional silicon-based solar cells, for its economical trait of conversion of photovoltaic energy. DSSCs were fabricated by depositing six natural dyes, which were extricated from Pomegranates, Beet, Eggplant, Red Amaranth leaves (Amaranthus Cruentus), Sunflower and Malabar spinach on optically transparent film of titanium dioxide. Studies on optical attributes of extricated natural dyes and photoelectrical characteristics of the assembled DSSCs were made and concluded that among all the six natural dyes Malabar Spinach seeds showed the highest current density and effective efficiency of converted solar energy.
{"title":"Dye-Sensitized Solar Cells Fabrication Employing Natural Hues as Photosensitizing Substances","authors":"Chaiti Kumar, Sweta Chatterjee, A. Ghosh, Sachindranath Das, S. N. Patra","doi":"10.1109/EDKCON.2018.8770511","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770511","url":null,"abstract":"Dye-sensitized solar cells (DSSCs) are plausible alternative compared to the most traditional silicon-based solar cells, for its economical trait of conversion of photovoltaic energy. DSSCs were fabricated by depositing six natural dyes, which were extricated from Pomegranates, Beet, Eggplant, Red Amaranth leaves (Amaranthus Cruentus), Sunflower and Malabar spinach on optically transparent film of titanium dioxide. Studies on optical attributes of extricated natural dyes and photoelectrical characteristics of the assembled DSSCs were made and concluded that among all the six natural dyes Malabar Spinach seeds showed the highest current density and effective efficiency of converted solar energy.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129302187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770411
Govind Singh Patel, Suman Lata Tripathi, S. Awasthi
A steep subthershold slope novel usymmetrical FinFET is proposed for gate lenght 9nm with improved performance in terms of Ion/Ioff ratio in comparison to existing symmetrical structure. Proformance is furture optimised in terms of doping variations and under lap behaviour of FinFET. High-K dielectric material oxide and metal gate contact of high work function incorporated and performance compared. pFinFET and nFinFET both simulated togather to obtain ideal characteristics required to match in CMOS technology. 2D/3D Visual TCAD device simulator utilised in design of all FinFET structures.
{"title":"Performance Enhanced Unsymmetrical FinFET and its Applications","authors":"Govind Singh Patel, Suman Lata Tripathi, S. Awasthi","doi":"10.1109/EDKCON.2018.8770411","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770411","url":null,"abstract":"A steep subthershold slope novel usymmetrical FinFET is proposed for gate lenght 9nm with improved performance in terms of Ion/Ioff ratio in comparison to existing symmetrical structure. Proformance is furture optimised in terms of doping variations and under lap behaviour of FinFET. High-K dielectric material oxide and metal gate contact of high work function incorporated and performance compared. pFinFET and nFinFET both simulated togather to obtain ideal characteristics required to match in CMOS technology. 2D/3D Visual TCAD device simulator utilised in design of all FinFET structures.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"29 Pt 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124600955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770515
Kalyan Biswas, C. Sarkar
MOSFET devices with multiple gates are well appropriate for low-voltage operation because of its superior performance against Short Channel Effects (SCEs) and better gate controllability. FinFET is considered as one of the promising device. However, Fin geometry has a big impact on its performance. In this paper, an analysis on the effect of Fin structure parameter like Fin aspect ratio (Fin height/Fin width) on the Analog/RF performance of the Junctionless FinFET is presented for its SoC application. Different important output parameters such as OFF current $(mathrm{I}_{mathrm{O}mathrm{F}mathrm{F}})$ ON current $(mathrm{I}_{mathrm{O}mathrm{N}}),mathrm{I}_{mathrm{O}mathrm{N}}{/}mathrm{I}_{mathrm{O}mathrm{F}mathrm{F}}$ current ratio, Transconductance $(mathrm{g}_{mathrm{m}})$ Transconductance Generation Factor $(mathrm{g}_{mathrm{m}}/mathrm{I}_{mathrm{d}mathrm{s}})$ Cut-off Frequency $(mathrm{f}_{mathrm{T}})$ and Maximum frequency of oscillation $(mathrm{f}_{max})$ have been analyzed using TCAD device simulator. From the analysis it is established that the device presented in this work shows better $mathrm{I}_{mathrm{O}mathrm{N}}, mathrm{I}_{mathrm{O}mathrm{F}mathrm{F}}, mathrm{I}_{mathrm{O}mathrm{N}}/mathrm{I}_{mathrm{O}mathrm{F}mathrm{F}}$ Transconductance, and Transconductance generation factor if Fin structure having higher aspect ratio is used. However, slight decrement in $mathrm{f}_{mathrm{T}}$ and fmaxare noticed when the Fin aspect ratio is high. Findings of this work will be helpful for design of devices for its specific applications.
{"title":"Optimizing Fin Aspect Ratio of Junctionless Bulk FinFET for Application in Analog/RF Circuit","authors":"Kalyan Biswas, C. Sarkar","doi":"10.1109/EDKCON.2018.8770515","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770515","url":null,"abstract":"MOSFET devices with multiple gates are well appropriate for low-voltage operation because of its superior performance against Short Channel Effects (SCEs) and better gate controllability. FinFET is considered as one of the promising device. However, Fin geometry has a big impact on its performance. In this paper, an analysis on the effect of Fin structure parameter like Fin aspect ratio (Fin height/Fin width) on the Analog/RF performance of the Junctionless FinFET is presented for its SoC application. Different important output parameters such as OFF current $(mathrm{I}_{mathrm{O}mathrm{F}mathrm{F}})$ ON current $(mathrm{I}_{mathrm{O}mathrm{N}}),mathrm{I}_{mathrm{O}mathrm{N}}{/}mathrm{I}_{mathrm{O}mathrm{F}mathrm{F}}$ current ratio, Transconductance $(mathrm{g}_{mathrm{m}})$ Transconductance Generation Factor $(mathrm{g}_{mathrm{m}}/mathrm{I}_{mathrm{d}mathrm{s}})$ Cut-off Frequency $(mathrm{f}_{mathrm{T}})$ and Maximum frequency of oscillation $(mathrm{f}_{max})$ have been analyzed using TCAD device simulator. From the analysis it is established that the device presented in this work shows better $mathrm{I}_{mathrm{O}mathrm{N}}, mathrm{I}_{mathrm{O}mathrm{F}mathrm{F}}, mathrm{I}_{mathrm{O}mathrm{N}}/mathrm{I}_{mathrm{O}mathrm{F}mathrm{F}}$ Transconductance, and Transconductance generation factor if Fin structure having higher aspect ratio is used. However, slight decrement in $mathrm{f}_{mathrm{T}}$ and fmaxare noticed when the Fin aspect ratio is high. Findings of this work will be helpful for design of devices for its specific applications.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123207793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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