Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770457
N. Paul, Sudharshan Vadnala, A. Agrawal, S. Vanjari, Shiv Govind Singh
La0.7Sr0.3MnO3 as a sensing material has shown an amazing potential for uncooled thermal imaging application. Here we report the fabrication of a La0.7Sr0.3MnO3 (LSMO) thin film thermistor on a Si wafer and explored two prime figure-of-merit such as temperature coefficient of resistance (TCR) and optical responsivity, which are very useful parameters to compare the performance with any thermal sensor. The LSMO films were deposited on a SrTiO3(STO) buffer layer with Si/SiO2 as a substrate, by a pulsed laser deposition (PLD) technique. The crystallinity and surface topography of the films were analyzed by X-ray diffraction (XRD) and atomic force microscopy (AFM). The fabricated device was then analyzed for its thermal and electrical characteristics to validate its suitability as an IR sensor. The fabricated device shows very sharp metal-to-insulator (TMI) phase transition temperature at 150 K and very high TCR of +4% K−1 and −4%K−1near 100 K and 200 K respectively, when the temperature was sweeped from 10 K to 300 K. Fabricated Thermistor shows very good thermal response and recovery when subjected to an alternating on-off cycle of IR lamp (150 W) illumination, which confirms its suitability for the highspeed thermal imaging application. The experimental analysis shows highest responsivity of $sim 21085$ V/W at 8.5 μm, which falls in the Long-Wave Infrared (LWIR) region, which is an ideal IR band for any thermal imaging application.
{"title":"Thermal and Optoelectrical Analysis of La0.7Sr0.3MnO3 Thin Film Thermistor in 8–12 μm Range for Uncooled Microbolometer Application","authors":"N. Paul, Sudharshan Vadnala, A. Agrawal, S. Vanjari, Shiv Govind Singh","doi":"10.1109/EDKCON.2018.8770457","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770457","url":null,"abstract":"La0.7Sr0.3MnO3 as a sensing material has shown an amazing potential for uncooled thermal imaging application. Here we report the fabrication of a La0.7Sr0.3MnO3 (LSMO) thin film thermistor on a Si wafer and explored two prime figure-of-merit such as temperature coefficient of resistance (TCR) and optical responsivity, which are very useful parameters to compare the performance with any thermal sensor. The LSMO films were deposited on a SrTiO3(STO) buffer layer with Si/SiO2 as a substrate, by a pulsed laser deposition (PLD) technique. The crystallinity and surface topography of the films were analyzed by X-ray diffraction (XRD) and atomic force microscopy (AFM). The fabricated device was then analyzed for its thermal and electrical characteristics to validate its suitability as an IR sensor. The fabricated device shows very sharp metal-to-insulator (TMI) phase transition temperature at 150 K and very high TCR of +4% K−1 and −4%K−1near 100 K and 200 K respectively, when the temperature was sweeped from 10 K to 300 K. Fabricated Thermistor shows very good thermal response and recovery when subjected to an alternating on-off cycle of IR lamp (150 W) illumination, which confirms its suitability for the highspeed thermal imaging application. The experimental analysis shows highest responsivity of $sim 21085$ V/W at 8.5 μm, which falls in the Long-Wave Infrared (LWIR) region, which is an ideal IR band for any thermal imaging application.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125221156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770444
S. Sinha, K. Biswas, A. Sarkar, Siddharth Shaw, J. Bandyopadhyay, S. Mitra, D. De
In the present work, a bare (6,0) single-walled carbon nanotube (SWCNT)is chosen to be surface functionalized with a single-stranded DNA (ssDNA)oligomer in order to facilitate a transition in the intrinsic electronic property of the former entity i.e. shift from a metallic to semiconducting nature. The coupled system has been designed with the help of ATK-VNL simulation tool. Induction of a bandgap in SWCNT on account of ssDNA functionalization is observed. The bandgap value is obtained to be 0.016 eV, Transmission spectra and Eigenstate analyses support relevant changes in the bandstructure. I-V characteristic plots also elucidate the semiconducting behaviour of the SWCNT-ssDNA hybrid model. This study could be helpful for opening newer avenues for designing Nano Electromechanical Systems (NEMS)for biomedical and healthcare applications.
{"title":"Tuning of Bandstructure of Single—Walled Carbon Nanotube Functionalized with ssDNA Oligonucleotide Sequence","authors":"S. Sinha, K. Biswas, A. Sarkar, Siddharth Shaw, J. Bandyopadhyay, S. Mitra, D. De","doi":"10.1109/EDKCON.2018.8770444","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770444","url":null,"abstract":"In the present work, a bare (6,0) single-walled carbon nanotube (SWCNT)is chosen to be surface functionalized with a single-stranded DNA (ssDNA)oligomer in order to facilitate a transition in the intrinsic electronic property of the former entity i.e. shift from a metallic to semiconducting nature. The coupled system has been designed with the help of ATK-VNL simulation tool. Induction of a bandgap in SWCNT on account of ssDNA functionalization is observed. The bandgap value is obtained to be 0.016 eV, Transmission spectra and Eigenstate analyses support relevant changes in the bandstructure. I-V characteristic plots also elucidate the semiconducting behaviour of the SWCNT-ssDNA hybrid model. This study could be helpful for opening newer avenues for designing Nano Electromechanical Systems (NEMS)for biomedical and healthcare applications.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"416 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124172951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/edkcon.2018.8770484
{"title":"Welcome message from General Co-Chair, EDKCON","authors":"","doi":"10.1109/edkcon.2018.8770484","DOIUrl":"https://doi.org/10.1109/edkcon.2018.8770484","url":null,"abstract":"","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121413021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770473
P. Sarkar, Saradindu Panda, B. Maji, A. Mukhopadhyay
Recently, Plasmonic gives increased interest that has been received as a way to enhancement in photonic response at optical extinction at metal-dielectric interface. It's highlighted property is that nanostructure can control optical fields due to the strong interaction of the metal-dielectric structure that allows incident photonic propagation at the nanoscale. In this study, we investigate and simulate the effectiveness of various large bandgap dielectric materials like silicon nitride, aluminum oxide and silicon dioxide with various metallic nanoparticle and also simulate finite time-based metal-dielectric-semiconductor nanostructure and find various field component for plasmonic improvement in form of photonic extinction in metal-dielectric nanostructure specifically for solar energy harvesting methodology.
{"title":"Effect of Various Dielectrics to Plasmonic Improvement in Metal-Dielectric-Semiconductor Substrate","authors":"P. Sarkar, Saradindu Panda, B. Maji, A. Mukhopadhyay","doi":"10.1109/EDKCON.2018.8770473","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770473","url":null,"abstract":"Recently, Plasmonic gives increased interest that has been received as a way to enhancement in photonic response at optical extinction at metal-dielectric interface. It's highlighted property is that nanostructure can control optical fields due to the strong interaction of the metal-dielectric structure that allows incident photonic propagation at the nanoscale. In this study, we investigate and simulate the effectiveness of various large bandgap dielectric materials like silicon nitride, aluminum oxide and silicon dioxide with various metallic nanoparticle and also simulate finite time-based metal-dielectric-semiconductor nanostructure and find various field component for plasmonic improvement in form of photonic extinction in metal-dielectric nanostructure specifically for solar energy harvesting methodology.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"397 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122572205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770438
L. Banerjee, A. Mukhopadhyay, P. Gupta, A. Sengupta, H. Rahaman
In this work by means of ab-initio calculations and Non equilibrium Green's function (NEGF) simulation we look to investigate the effect of strain in MoS2 armchair nanoribbon (ANR)-metal junctions. We consider a (10, 0) MoS2 ANR and various metals as Ti, Cr, Al and Ag for contact material. The effect of strain both in plain and out of plain direction is considered. We calculated the work function variations, band-gaps and carrier effective masses with Density Functional Theory (DFT) calculation and evaluated the Schottky barriers with the Schottky-Mott formula. The currents through these barriers were then evaluated with NEGF calculations. Our results show a wide possibility of output current enhancement with Schottky barrier height modulation with the proper choice of strain and contact material combinations.
{"title":"Performance Analysis of Schottky Barrier Height Modulation in Strained (10, 0) MoS2 Armchair Nano Ribbon-Metal Junction","authors":"L. Banerjee, A. Mukhopadhyay, P. Gupta, A. Sengupta, H. Rahaman","doi":"10.1109/EDKCON.2018.8770438","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770438","url":null,"abstract":"In this work by means of ab-initio calculations and Non equilibrium Green's function (NEGF) simulation we look to investigate the effect of strain in MoS2 armchair nanoribbon (ANR)-metal junctions. We consider a (10, 0) MoS2 ANR and various metals as Ti, Cr, Al and Ag for contact material. The effect of strain both in plain and out of plain direction is considered. We calculated the work function variations, band-gaps and carrier effective masses with Density Functional Theory (DFT) calculation and evaluated the Schottky barriers with the Schottky-Mott formula. The currents through these barriers were then evaluated with NEGF calculations. Our results show a wide possibility of output current enhancement with Schottky barrier height modulation with the proper choice of strain and contact material combinations.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123195460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770489
S. Bhattacherjee, A. Biswas
Using numerical analysis we report, for first time, the analog/ RF circuit behaviour and low frequency noise (LFN) performance of $text{InAs}_{x}Sb_{1-x}$ - channel nMOSFETs having different As contents at channel length of 30 nm. We explore our investigation for molar fraction $x$ ranging 0.25 - 0.65 and substrate bias in the range from - 0.5 to 0.5V. We have obtained the drain current $I_{D}$ and transconductance $g_{M}$ taking into account the effect of composition fraction and substrate bias effects. The drain current model is verified with reported experimental data. The simulated values of drain current $I_{D}$ and transconductance $g_{M}$ are employed to estimate the drain current power spectral density, cut -off frequency $f_{T}$ and minimum noise power $F_{min}$ as a function composition fraction of the substrate. Our investigation reveals that LFN noise can be controlled by proper selection of the composition fraction as well as substrate bias of UTB channel MOSFETs.
{"title":"Analysis of Low Frequency Noise in Nanoscale InAsxSb1-x MOSFETs with Varying Compositions","authors":"S. Bhattacherjee, A. Biswas","doi":"10.1109/EDKCON.2018.8770489","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770489","url":null,"abstract":"Using numerical analysis we report, for first time, the analog/ RF circuit behaviour and low frequency noise (LFN) performance of $text{InAs}_{x}Sb_{1-x}$ - channel nMOSFETs having different As contents at channel length of 30 nm. We explore our investigation for molar fraction $x$ ranging 0.25 - 0.65 and substrate bias in the range from - 0.5 to 0.5V. We have obtained the drain current $I_{D}$ and transconductance $g_{M}$ taking into account the effect of composition fraction and substrate bias effects. The drain current model is verified with reported experimental data. The simulated values of drain current $I_{D}$ and transconductance $g_{M}$ are employed to estimate the drain current power spectral density, cut -off frequency $f_{T}$ and minimum noise power $F_{min}$ as a function composition fraction of the substrate. Our investigation reveals that LFN noise can be controlled by proper selection of the composition fraction as well as substrate bias of UTB channel MOSFETs.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"517 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123096323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770430
D. Pradhan, G. Bose, S. Ghosh, N. Tripathy, J. Kar
Tremendous downscaling of well known semiconductor materials has resulted in various demerits like, defects at the interface and variation in bandgap. In order to overcome these challenges, the beyond graphene area of material science has been explored rapidly with the discovery of transition metal dichalcogenides (TMDC). Among TMDC, molybdenum disulphide (MoS2)has drawn tremendous attention for their excellent structural, optical, electrical and mechanical properties, which makes it suitable for the use in next generation electronic and optoelectronic devices. Initially, molybdenum (Mo)thin films were grown on silicon by RF sputtering technique at 45 W. Afterwards, sulphonation of Mo was carried out using a custom designed two zone tubular chemical vapor deposition (CVD) system. In order to optimize the growth temperature, the temperature of higher heating zone of CVD system was varied from 650 C to 850 C, The structural, morphological and optical studies reveal that the higher temperature is favorable for the growth of MoS2 layers.
{"title":"Effect of Process Temperature on Molybdenum Disulphide Layers Grown by Chemical Vapor Deposition Technique","authors":"D. Pradhan, G. Bose, S. Ghosh, N. Tripathy, J. Kar","doi":"10.1109/EDKCON.2018.8770430","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770430","url":null,"abstract":"Tremendous downscaling of well known semiconductor materials has resulted in various demerits like, defects at the interface and variation in bandgap. In order to overcome these challenges, the beyond graphene area of material science has been explored rapidly with the discovery of transition metal dichalcogenides (TMDC). Among TMDC, molybdenum disulphide (MoS2)has drawn tremendous attention for their excellent structural, optical, electrical and mechanical properties, which makes it suitable for the use in next generation electronic and optoelectronic devices. Initially, molybdenum (Mo)thin films were grown on silicon by RF sputtering technique at 45 W. Afterwards, sulphonation of Mo was carried out using a custom designed two zone tubular chemical vapor deposition (CVD) system. In order to optimize the growth temperature, the temperature of higher heating zone of CVD system was varied from 650 C to 850 C, The structural, morphological and optical studies reveal that the higher temperature is favorable for the growth of MoS2 layers.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115364124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770471
S. Dey, Tara Prasanna Dash, S. Das, E. Mohapatra, J. Jena, C. K. Maiti
With downscaling of device features to nanoscale, quantum effect plays an important role to understand the device physics. When the cross-section of the channel becomes closer to the free electron wavelength, quantum corrections are essential for accurate modeling of the electrostatic properties of the device. As technology scaling continues, the lateral nanowire transistor (LNW) size is expected to be scaled down from 7nm to 5nm or below. Local continuum models can no longer accurately describe nanoscale device behavior and hence more advanced physics-based models must be adopted in device simulation. Technology Computer Aided Design (TCAD) based on Density-Gradient and Drift-Diffusion models is a powerful tool to support the technology development in the semiconductor industry. The main focus of this study is to compare two device modelling approaches for the performance evaluation of double-stacked nanoscale gate-all-around Si nanowire transistors in which advanced transport models are included in simulation.
{"title":"Gate-All-Around Si-Nanowire Transistors: Simulation at Nanoscale","authors":"S. Dey, Tara Prasanna Dash, S. Das, E. Mohapatra, J. Jena, C. K. Maiti","doi":"10.1109/EDKCON.2018.8770471","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770471","url":null,"abstract":"With downscaling of device features to nanoscale, quantum effect plays an important role to understand the device physics. When the cross-section of the channel becomes closer to the free electron wavelength, quantum corrections are essential for accurate modeling of the electrostatic properties of the device. As technology scaling continues, the lateral nanowire transistor (LNW) size is expected to be scaled down from 7nm to 5nm or below. Local continuum models can no longer accurately describe nanoscale device behavior and hence more advanced physics-based models must be adopted in device simulation. Technology Computer Aided Design (TCAD) based on Density-Gradient and Drift-Diffusion models is a powerful tool to support the technology development in the semiconductor industry. The main focus of this study is to compare two device modelling approaches for the performance evaluation of double-stacked nanoscale gate-all-around Si nanowire transistors in which advanced transport models are included in simulation.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132088049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770495
R. Poornachandran, N. Mohankumar, R. Saravana kumar, S. Baskaran, S. Kumutha
In this paper, we report the noise performance of a 50nm gate length InAs based DG-HEMT for high frequency applications. Normally the noise is predominant at the channel/barrier interface caused by scattering of carriers thus increasing the leakage mechanism. The noise spectral density, $mathrm{S}_{text{vg}}, mathrm{S}_{text{vd}}$ and $mathrm{S}_{text{ig}}, mathrm{S}_{text{id}}$ as a function of $mathrm{V}_{text{gs}}$ and $mathrm{V}_{text{ds}}$ and frequency are analyzed in detail, from these values NFmin is also determined for double gate InAs HEMT. For 50nm DG-HEMT, $text{NF}_{min}$ of 1.2 dB at 710GHz with $mathrm{V}_{text{gs}}=0.3mathrm{V}$ and $mathrm{V}_{text{ds}}$ = 0.5 V is obtained, making it suitable for LNA design for RF applications.
{"title":"Noise Characterization of InAs Based DG-HEMT Devices for RF Applications","authors":"R. Poornachandran, N. Mohankumar, R. Saravana kumar, S. Baskaran, S. Kumutha","doi":"10.1109/EDKCON.2018.8770495","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770495","url":null,"abstract":"In this paper, we report the noise performance of a 50nm gate length InAs based DG-HEMT for high frequency applications. Normally the noise is predominant at the channel/barrier interface caused by scattering of carriers thus increasing the leakage mechanism. The noise spectral density, <tex>$mathrm{S}_{text{vg}}, mathrm{S}_{text{vd}}$</tex> and <tex>$mathrm{S}_{text{ig}}, mathrm{S}_{text{id}}$</tex> as a function of <tex>$mathrm{V}_{text{gs}}$</tex> and <tex>$mathrm{V}_{text{ds}}$</tex> and frequency are analyzed in detail, from these values NF<inf>min</inf> is also determined for double gate InAs HEMT. For 50nm DG-HEMT, <tex>$text{NF}_{min}$</tex> of 1.2 dB at 710GHz with <tex>$mathrm{V}_{text{gs}}=0.3mathrm{V}$</tex> and <tex>$mathrm{V}_{text{ds}}$</tex> = 0.5 V is obtained, making it suitable for LNA design for RF applications.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130855302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/EDKCON.2018.8770405
Shrabani Ghosh, S. Dey, B. Das, Nirmalya Sankar Das, S. Sarkar, K. Chattopadhyay
Silicon Nanowires also referred as SiNWs are considered as one of the most important one-dimensional materials due to their several unique properties. Here, the silicon nanowires (SiNWs) are grown by a simple metal assisted chemical etching method on silicon substrate via HF treatment. The length and the aspect ratio of the as-prepared SiNWs are varied by etching time (taken 40, 60 and 80 minutes here). Various characterization methods have been employed to evaluate its properties. X-ray diffraction (X-RD) determines the crystallinity of the sample as well as bulk to nano transformation while morphological information is obtained by field emission scanning electron microscope (FESEM). Reflectance spectra of HF modified samples have shown remarkable difference from that of pure silicon wafer. We have obtained band gap of the samples for different etching times using Kubelka-Munk equation. The contact angle (CA) of deionised water (DI) on the SiNWs indicates to the transformation from hydrophilic bulk Si wafer to hydrophobic Silicon nanowire. HF treatment plays an important role which changes the SiNWs surface from superhydrophilic to hydrophobic. 60 minutes of etching time is optimum to obtain a hydrophobic SiNWs. By the coating of low energy solvent, it is possible to transform the substrate from hydrophobic to superhydrophobic.
{"title":"Wettability of Metal Assisted Chemically Etched (MaCE) Grass Like Silicon Nanowires","authors":"Shrabani Ghosh, S. Dey, B. Das, Nirmalya Sankar Das, S. Sarkar, K. Chattopadhyay","doi":"10.1109/EDKCON.2018.8770405","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770405","url":null,"abstract":"Silicon Nanowires also referred as SiNWs are considered as one of the most important one-dimensional materials due to their several unique properties. Here, the silicon nanowires (SiNWs) are grown by a simple metal assisted chemical etching method on silicon substrate via HF treatment. The length and the aspect ratio of the as-prepared SiNWs are varied by etching time (taken 40, 60 and 80 minutes here). Various characterization methods have been employed to evaluate its properties. X-ray diffraction (X-RD) determines the crystallinity of the sample as well as bulk to nano transformation while morphological information is obtained by field emission scanning electron microscope (FESEM). Reflectance spectra of HF modified samples have shown remarkable difference from that of pure silicon wafer. We have obtained band gap of the samples for different etching times using Kubelka-Munk equation. The contact angle (CA) of deionised water (DI) on the SiNWs indicates to the transformation from hydrophilic bulk Si wafer to hydrophobic Silicon nanowire. HF treatment plays an important role which changes the SiNWs surface from superhydrophilic to hydrophobic. 60 minutes of etching time is optimum to obtain a hydrophobic SiNWs. By the coating of low energy solvent, it is possible to transform the substrate from hydrophobic to superhydrophobic.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131217407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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