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2006 International Symposium on VLSI Design, Automation and Test最新文献

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Hazard-Aware Performance Prediction for Automatic Instruction-Set Selection 自动指令集选择的危险感知性能预测
Pub Date : 2006-04-26 DOI: 10.1109/VDAT.2006.258123
P. Hallschmid, R. Saleh
Recent research in the area of application specific instruction set processors (ASIPs) has focused on the automatic selection of a custom instruction set based on a high level description of the application. Existing methods perform instruction selection under the assumption that data hazards can be ignored due to functional unit forwarding. This paper addresses data hazards in the ASIP flow when functional unit to functional unit forwarding is too expensive. This is accomplished by devising a "hazard-aware" predictor for measuring the impact of custom instructions on performance. Results show that our predictor reduces prediction error from 50% to 15% compared to the existing simple predictor and with a fraction of the run-time of rescheduling. When incorporated into an instruction enumeration and selection algorithm, our predictor reduces the total schedule length by as much as 8.4%
应用专用指令集处理器(application specific instruction set processor, asip)领域的最新研究主要集中在基于应用的高级描述自动选择自定义指令集。现有方法是在假设功能单元转发可以忽略数据危害的前提下进行指令选择的。本文讨论了当功能单元到功能单元的转发过于昂贵时,ASIP流中的数据危害。这是通过设计一个“危险意识”预测器来测量自定义指令对性能的影响来实现的。结果表明,与现有的简单预测器相比,我们的预测器将预测误差从50%降低到15%,并且只需要一小部分重新调度的运行时间。当合并到指令枚举和选择算法中时,我们的预测器将总调度长度减少了8.4%
{"title":"Hazard-Aware Performance Prediction for Automatic Instruction-Set Selection","authors":"P. Hallschmid, R. Saleh","doi":"10.1109/VDAT.2006.258123","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258123","url":null,"abstract":"Recent research in the area of application specific instruction set processors (ASIPs) has focused on the automatic selection of a custom instruction set based on a high level description of the application. Existing methods perform instruction selection under the assumption that data hazards can be ignored due to functional unit forwarding. This paper addresses data hazards in the ASIP flow when functional unit to functional unit forwarding is too expensive. This is accomplished by devising a \"hazard-aware\" predictor for measuring the impact of custom instructions on performance. Results show that our predictor reduces prediction error from 50% to 15% compared to the existing simple predictor and with a fraction of the run-time of rescheduling. When incorporated into an instruction enumeration and selection algorithm, our predictor reduces the total schedule length by as much as 8.4%","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"40 1-8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123379202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An All-Digital Duty Cycle Corrector 全数字占空比校正器
Pub Date : 2006-04-26 DOI: 10.1109/VDAT.2006.258158
Bo-Jiun Chen, Shao-Ku Kao, Shen-Iuan Liu
An all-digital 50% duty cycle corrector (DCC) is presented. The features of the proposed DCC include a wide operation frequency range, a wide input duty cycle range for the input clock, and a short locked time to recover the duty cycle of 50%. This digital DCC has been implemented in a 0.35mum 2P4M CMOS process. The acceptable duty cycle and frequency range of the input clock is 25%-75% and 250MHz-600MHz, respectively. The measured peak-peak jitter is 17.3ps at 600MHz. Besides, this DCC saves the power consumption by turning off a half delay line. Its power consumption is 16mW at 600MHz
提出了一种全数字50%占空比校正器(DCC)。该DCC具有宽工作频率范围、宽输入时钟占空比范围和短锁定时间以恢复50%的占空比等特点。该数字DCC已在0.35 μ m 2P4M CMOS工艺中实现。输入时钟的可接受占空比为25% ~ 75%,频率范围为250mhz ~ 600mhz。测量到的峰值抖动在600MHz时为17.3ps。此外,该DCC通过关闭半延迟线来节省功耗。在600MHz时,其功耗为16mW
{"title":"An All-Digital Duty Cycle Corrector","authors":"Bo-Jiun Chen, Shao-Ku Kao, Shen-Iuan Liu","doi":"10.1109/VDAT.2006.258158","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258158","url":null,"abstract":"An all-digital 50% duty cycle corrector (DCC) is presented. The features of the proposed DCC include a wide operation frequency range, a wide input duty cycle range for the input clock, and a short locked time to recover the duty cycle of 50%. This digital DCC has been implemented in a 0.35mum 2P4M CMOS process. The acceptable duty cycle and frequency range of the input clock is 25%-75% and 250MHz-600MHz, respectively. The measured peak-peak jitter is 17.3ps at 600MHz. Besides, this DCC saves the power consumption by turning off a half delay line. Its power consumption is 16mW at 600MHz","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"466 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123020468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Monolithic Class E SiGe Power Amplifier Design with Wideband High-Efficiency and Linearity 宽带、高效率、线性的单片E级SiGe功率放大器设计
Pub Date : 2006-04-26 DOI: 10.1109/VDAT.2006.258128
Donald Y. C. Lie, J. Popp, P. Lee, A. Yang, Jason Rowlando, Feipeng Wang, Donald Kimball
This paper discusses and compares the design of monolithic RF broadband class E SiGe power amplifiers (PAs) centered at 900MHz that are highly efficient and linear. It is found that high power-added-efficiency (~65%) can be achieved with PAs designed using either high-breakdown or high-fT SiGe transistors. The PAs designed with high-breakdown devices can provide ~3% better efficiency at higher supply voltages but with worse bias sensitivity, inferior broadband frequency response, and slightly lower gain than those designed with high-fT devices. However, the class E PAs designed using high-breakdown devices can be successfully linearized using an open-loop envelope tracking (ET) technique as their output spectra pass the stringent EDGE transmit mask with margins, achieving an overall system PAE of 44.4% that surpasses the ~30% PAE obtainable using commercial GaAs class AB PAs. These promising results indicate the feasibility of realizing true single-chip wireless transceivers with on-chip RF SiGe PAs for spectrally-efficient non-constant-envelope modulation schemes
本文讨论并比较了以900MHz为中心的高效线性单片射频宽带级E SiGe功率放大器的设计。研究发现,采用高击穿或高ft SiGe晶体管设计的PAs可以实现高功率附加效率(~65%)。采用高击穿器件设计的放大器在较高电源电压下的效率可提高约3%,但其偏置灵敏度较差,宽带频率响应较差,增益略低于采用高击穿器件设计的放大器。然而,使用高击穿器件设计的E类PAs可以使用开环包络跟踪(ET)技术成功地线性化,因为它们的输出光谱通过了严格的EDGE传输掩模,具有余量,实现了44.4%的整体系统PAE,超过了使用商用GaAs AB类PAs可获得的~30% PAE。这些有希望的结果表明,利用片上RF SiGe PAs实现真正的单片无线收发器的可行性,可以实现频谱效率高的非恒定包络调制方案
{"title":"Monolithic Class E SiGe Power Amplifier Design with Wideband High-Efficiency and Linearity","authors":"Donald Y. C. Lie, J. Popp, P. Lee, A. Yang, Jason Rowlando, Feipeng Wang, Donald Kimball","doi":"10.1109/VDAT.2006.258128","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258128","url":null,"abstract":"This paper discusses and compares the design of monolithic RF broadband class E SiGe power amplifiers (PAs) centered at 900MHz that are highly efficient and linear. It is found that high power-added-efficiency (~65%) can be achieved with PAs designed using either high-breakdown or high-fT SiGe transistors. The PAs designed with high-breakdown devices can provide ~3% better efficiency at higher supply voltages but with worse bias sensitivity, inferior broadband frequency response, and slightly lower gain than those designed with high-fT devices. However, the class E PAs designed using high-breakdown devices can be successfully linearized using an open-loop envelope tracking (ET) technique as their output spectra pass the stringent EDGE transmit mask with margins, achieving an overall system PAE of 44.4% that surpasses the ~30% PAE obtainable using commercial GaAs class AB PAs. These promising results indicate the feasibility of realizing true single-chip wireless transceivers with on-chip RF SiGe PAs for spectrally-efficient non-constant-envelope modulation schemes","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"424 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123096127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
An All-Digital Delay-Locked Loop for DDR SDRAM Controller Applications 用于DDR SDRAM控制器应用的全数字延迟锁环
Pub Date : 2006-04-26 DOI: 10.1109/VDAT.2006.258159
Ching-Che Chung, Pao-Lung Chen, Chen-Yi Lee
This paper presents an all-digital delay-locked loop (DLL) for DDR SDRAM controller applications. The presented all-digital, cell-based, DLL-based five-phase multi-phase clock generator can generate the required fixed timing delay (tSD) for DDR SDRAM controller to capture the output data (DQ) correctly. The proposed DLL-based multi-phase clock generator architecture can lock to the harmonic of input clock period and still get a correct multi-phase clock output. Hence the design challenges to build a high resolution delay line with minimum intrinsic delay can be reduced. Simulation results and chip measurement results show that the proposed DLL can generate desired tSD delay with error < 7.6%. The power consumption of the proposed DLL is 4.1mW (at DDR-200) and is 9.0mW (at DDR-400)
本文提出了一种适用于DDR SDRAM控制器的全数字延时锁环(DLL)。所提出的全数字、基于单元、基于dll的五相多相时钟发生器可以产生DDR SDRAM控制器正确捕获输出数据(DQ)所需的固定定时延迟(tSD)。所提出的基于dll的多相时钟发生器结构可以锁定输入时钟周期的谐波,同时仍能得到正确的多相时钟输出。因此,构建具有最小固有延迟的高分辨率延迟线的设计挑战可以减少。仿真结果和芯片测量结果表明,所提出的DLL能够产生理想的tSD延迟,误差< 7.6%。拟议DLL的功耗为4.1mW (DDR-200)和9.0mW (DDR-400)。
{"title":"An All-Digital Delay-Locked Loop for DDR SDRAM Controller Applications","authors":"Ching-Che Chung, Pao-Lung Chen, Chen-Yi Lee","doi":"10.1109/VDAT.2006.258159","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258159","url":null,"abstract":"This paper presents an all-digital delay-locked loop (DLL) for DDR SDRAM controller applications. The presented all-digital, cell-based, DLL-based five-phase multi-phase clock generator can generate the required fixed timing delay (tSD) for DDR SDRAM controller to capture the output data (DQ) correctly. The proposed DLL-based multi-phase clock generator architecture can lock to the harmonic of input clock period and still get a correct multi-phase clock output. Hence the design challenges to build a high resolution delay line with minimum intrinsic delay can be reduced. Simulation results and chip measurement results show that the proposed DLL can generate desired tSD delay with error < 7.6%. The power consumption of the proposed DLL is 4.1mW (at DDR-200) and is 9.0mW (at DDR-400)","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117331665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Modeling and Testing of Intra-Cell Bridging Defects Using Butterfly Structure 基于蝴蝶结构的细胞内桥接缺陷建模与测试
Pub Date : 2006-04-26 DOI: 10.1109/VDAT.2006.258149
Lu-Yen Ko, Shi-Yu Huang, Jia-Liang Chiou, H. Cheng
We address in this paper the defect modeling and testing of intra-cell bridging defects from the layout perspective. For defect modeling, we incorporate a butterfly structure to resolve the potential non-logical effect a bridging defect may cause. By doing so, a realistic Boolean fault model at the gate level can thus be generated for each defect under consideration. Furthermore, the test vectors can be generated by a formulation on top of existing ATPG tools. Experimental results indicate that simple stuck-at test set can only achieve 85% coverage for intra-cell bridging defects for ISCAS85. The proposed systematic flow can further boost it to 99%
本文从布局的角度讨论了胞内桥接缺陷的建模和测试。对于缺陷建模,我们采用蝴蝶结构来解决桥接缺陷可能导致的潜在非逻辑影响。通过这样做,一个现实的布尔故障模型就可以在门级为考虑中的每一个缺陷生成。此外,测试载体可以通过现有ATPG工具之上的配方生成。实验结果表明,简单的卡滞测试集对ISCAS85细胞内桥接缺陷的覆盖率仅为85%。提出的系统流程可以进一步将其提高到99%
{"title":"Modeling and Testing of Intra-Cell Bridging Defects Using Butterfly Structure","authors":"Lu-Yen Ko, Shi-Yu Huang, Jia-Liang Chiou, H. Cheng","doi":"10.1109/VDAT.2006.258149","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258149","url":null,"abstract":"We address in this paper the defect modeling and testing of intra-cell bridging defects from the layout perspective. For defect modeling, we incorporate a butterfly structure to resolve the potential non-logical effect a bridging defect may cause. By doing so, a realistic Boolean fault model at the gate level can thus be generated for each defect under consideration. Furthermore, the test vectors can be generated by a formulation on top of existing ATPG tools. Experimental results indicate that simple stuck-at test set can only achieve 85% coverage for intra-cell bridging defects for ISCAS85. The proposed systematic flow can further boost it to 99%","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126306410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Improving Single-Pass Redundancy Addition and Removal with Inconsistent Assignments 基于不一致赋值的单遍冗余添加和删除改进
Pub Date : 2006-04-26 DOI: 10.1109/VDAT.2006.258153
W. Lo, Yu-Liang Wu
Redundancy addition and removal, also known as rewiring, is a building block of a wide range of circuit optimization applications. In this paper, we propose a novel improvement on the FIRE redundancy identification technique and augment the state-of-the-art rewiring scheme RAMFIRE with it. Our method increases the number of alternative wires identified by 10% and improves the runtime by nearly 20%. Optimization applications based on rewiring can take the advantage of this speed up and enhanced rewiring power
冗余添加和删除,也称为重新布线,是广泛的电路优化应用的基石。在本文中,我们提出了对FIRE冗余识别技术的一种新的改进,并用它增强了最先进的重新布线方案RAMFIRE。我们的方法将可识别的替代导线数量增加了10%,并将运行时间提高了近20%。基于重新布线的优化应用程序可以利用这种速度提升和增强的重新布线能力
{"title":"Improving Single-Pass Redundancy Addition and Removal with Inconsistent Assignments","authors":"W. Lo, Yu-Liang Wu","doi":"10.1109/VDAT.2006.258153","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258153","url":null,"abstract":"Redundancy addition and removal, also known as rewiring, is a building block of a wide range of circuit optimization applications. In this paper, we propose a novel improvement on the FIRE redundancy identification technique and augment the state-of-the-art rewiring scheme RAMFIRE with it. Our method increases the number of alternative wires identified by 10% and improves the runtime by nearly 20%. Optimization applications based on rewiring can take the advantage of this speed up and enhanced rewiring power","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128042752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
New LCD Display Technology for High Performance with Low Cost-Shared Pixel Rendering Display 新型LCD显示技术实现高性能、低成本的共享像素渲染显示
Pub Date : 2006-04-26 DOI: 10.1109/VDAT.2006.258113
C. Chien, A. Wang, Weber Chien
Conventional displays often use a striped RGB pattern, but there exists some side-effect, such as sawtooth pattern, lower-yield rate and lower resolution/per area etc. Sitronix Technology Co. Ltd. are discovering alternative patterns, called SPRD, that could offer some new benefits. It combines the unique color filter and algorithm to perform the best display quality
传统显示器通常使用条纹RGB模式,但存在一些副作用,如锯齿模式,较低的良率和较低的分辨率/面积等。Sitronix Technology Co. Ltd.正在发现一种被称为SPRD的替代模式,这种模式可能会带来一些新的好处。它结合了独特的色彩过滤器和算法,以执行最佳的显示质量
{"title":"New LCD Display Technology for High Performance with Low Cost-Shared Pixel Rendering Display","authors":"C. Chien, A. Wang, Weber Chien","doi":"10.1109/VDAT.2006.258113","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258113","url":null,"abstract":"Conventional displays often use a striped RGB pattern, but there exists some side-effect, such as sawtooth pattern, lower-yield rate and lower resolution/per area etc. Sitronix Technology Co. Ltd. are discovering alternative patterns, called SPRD, that could offer some new benefits. It combines the unique color filter and algorithm to perform the best display quality","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"269 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114423392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Self-Biased Current Source Based Power-On Reset Circuit for On-Chip Applications 一种基于自偏置电流源的芯片上电复位电路
Pub Date : 2006-04-26 DOI: 10.1109/VDAT.2006.258175
A. Katyal, N. Bansal
Power-on reset circuits are available as discrete devices as well as on-chip solutions and are indispensable to initialize some critical nodes of analog and digital designs during power-on. In this paper, we present a power-on reset circuit specifically designed for on-chip applications. The mentioned POR circuit should meet certain design requirements necessary to be integrated on-chip, some of them being area-efficiency, power-efficiency, supply rise-time insensitivity and ambient temperature insensitivity. The circuit is implemented within a small area (60mum times 35mum) using the 2.5V tolerant MOSFETs of a 0.28mum CMOS technology. It has a maximum quiescent current consumption of 40muA and works over infinite range of supply rise-times and ambient temperature range of -40degC to 150degC
上电复位电路既可以作为分立器件,也可以作为片上解决方案,在上电过程中对模拟和数字设计的一些关键节点进行初始化是必不可少的。在本文中,我们提出了一种专为片上应用而设计的上电复位电路。上述POR电路应满足集成在片上所必需的一定设计要求,其中包括面积效率、功耗效率、电源上升时间不灵敏度和环境温度不灵敏度。该电路使用0.28mum CMOS技术的2.5V容限mosfet在小面积(60mum乘以35mum)内实现。它的最大静态电流消耗为40muA,工作在无限范围的电源上升时间和环境温度范围-40°c至150°c
{"title":"A Self-Biased Current Source Based Power-On Reset Circuit for On-Chip Applications","authors":"A. Katyal, N. Bansal","doi":"10.1109/VDAT.2006.258175","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258175","url":null,"abstract":"Power-on reset circuits are available as discrete devices as well as on-chip solutions and are indispensable to initialize some critical nodes of analog and digital designs during power-on. In this paper, we present a power-on reset circuit specifically designed for on-chip applications. The mentioned POR circuit should meet certain design requirements necessary to be integrated on-chip, some of them being area-efficiency, power-efficiency, supply rise-time insensitivity and ambient temperature insensitivity. The circuit is implemented within a small area (60mum times 35mum) using the 2.5V tolerant MOSFETs of a 0.28mum CMOS technology. It has a maximum quiescent current consumption of 40muA and works over infinite range of supply rise-times and ambient temperature range of -40degC to 150degC","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123831427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A CMOS Variable Gain Amplifier with DC Offset Calibration Loop for Wireless Communications 一种用于无线通信的带直流偏置校正环路的CMOS变增益放大器
Pub Date : 2006-04-26 DOI: 10.1109/VDAT.2006.258115
Zhih-Siou Cheng, J. Bor
A 64 dB gain range VGA with DC offset calibration loop is proposed in this work. This VGA adopts the degeneration type amplifier to vary voltage gain and uses the super-source-follower input stage to enhance the linearity. A digital-based DC offset calibration loop is also designed to solve the DC offset problem. An experimental chip is fabricated in 0.18 mum process. With 2 dB step, the gain error is less than 0.8 dB and the output DC offset is less than 100mV at maximum gain setting. The total power consumption is 11 mW
本文提出了一种增益范围为64 dB的带直流偏置校准环路的VGA电路。该VGA采用退化型放大器来改变电压增益,并采用超源跟随器输入级来提高线性度。为解决直流偏置问题,设计了基于数字的直流偏置校正回路。采用0.18 μ m工艺制备了实验芯片。在2 dB步进时,增益误差小于0.8 dB,最大增益设置时输出直流偏置小于100mV。总功耗为11mw
{"title":"A CMOS Variable Gain Amplifier with DC Offset Calibration Loop for Wireless Communications","authors":"Zhih-Siou Cheng, J. Bor","doi":"10.1109/VDAT.2006.258115","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258115","url":null,"abstract":"A 64 dB gain range VGA with DC offset calibration loop is proposed in this work. This VGA adopts the degeneration type amplifier to vary voltage gain and uses the super-source-follower input stage to enhance the linearity. A digital-based DC offset calibration loop is also designed to solve the DC offset problem. An experimental chip is fabricated in 0.18 mum process. With 2 dB step, the gain error is less than 0.8 dB and the output DC offset is less than 100mV at maximum gain setting. The total power consumption is 11 mW","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116133529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
High-Throughput LDPC Decoder for Long Code-Length 长码长的高吞吐量LDPC解码器
Pub Date : 2006-04-26 DOI: 10.1109/VDAT.2006.258134
T. Ishikawa, K. Shimizu, T. Ikenaga, S. Goto
We have designed and implemented the LDPC decoder with memory-reduction method to achieve high-throughput and practical hardware size for long code-length. The decoder decodes (3,6)-11520-bit regular LDPC codes using modified min-sum algorithm. The decoder achieves a throughput of 312 Mb/s at an operating frequency of 69 MHz with 20 iterative decoding. The gate count is 2M gates
我们设计并实现了采用内存缩减方法的LDPC解码器,以实现长码长的高吞吐量和实用的硬件尺寸。该解码器使用改进的最小和算法解码(3,6)-11520位的正则LDPC码。该解码器在69 MHz的工作频率下实现了312 Mb/s的吞吐量,并进行了20次迭代解码。登机门数为2M
{"title":"High-Throughput LDPC Decoder for Long Code-Length","authors":"T. Ishikawa, K. Shimizu, T. Ikenaga, S. Goto","doi":"10.1109/VDAT.2006.258134","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258134","url":null,"abstract":"We have designed and implemented the LDPC decoder with memory-reduction method to achieve high-throughput and practical hardware size for long code-length. The decoder decodes (3,6)-11520-bit regular LDPC codes using modified min-sum algorithm. The decoder achieves a throughput of 312 Mb/s at an operating frequency of 69 MHz with 20 iterative decoding. The gate count is 2M gates","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127498220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
期刊
2006 International Symposium on VLSI Design, Automation and Test
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