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Flip Chip Technology: A Method for Providing Known Good Die with High Density Interconnections 倒装芯片技术:一种提供高密度互连的已知优良芯片的方法
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753527
G. Adema, C. Berry, N. Koopman, G. Rinne, E. Yung, I. Turlik
Flip chip interconnections provide the highest interconnection density possible which makes this technology very attractive for use with multichip modules. However, several factors have hindered the use of this technology. These factors include the availability of bumped wafers and the inability to test and bum-in bumped chips before they are assembled onto a multichip module. MCNC has addressed both of these concerns by establishing a wafer bumping facility and by developing a method for the test and burn-in of bare die. The solder bump formation is based upon an electroplating process. The test and burn-in of bumped chips is accomplished using a unique process which utilizes a temporary metallurgical attachment to a test substrate. These processes are described in detail in the following sections.
倒装芯片互连提供了最高的互连密度,这使得该技术对多芯片模块的使用非常有吸引力。然而,有几个因素阻碍了这项技术的使用。这些因素包括碰撞晶圆的可用性,以及在组装到多芯片模块之前无法测试和磨合碰撞芯片。MCNC通过建立晶圆碰撞设备和开发裸模测试和烧蚀方法解决了这两个问题。焊料凸起的形成基于电镀工艺。凸起芯片的测试和烧成是使用一种独特的工艺来完成的,该工艺利用临时冶金附着到测试基板上。下面几节将详细描述这些过程。
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引用次数: 14
Large Format Mcm-D Processing Adaptation of the Hughes Hdmi/sup TM/ Process to Large Format Mcm-D: Options, Problems, Results to Date 大画幅Mcm-D处理休斯Hdmi/sup TM/过程适应大画幅Mcm-D:选项,问题,结果到目前为止
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753535
P. Trask, V. A. Pillai
GM Hughes Electronics Company has been researching approaches to low cost manufacturing of Multichip Modules (MCM) for several years. Hughes engineers believe that the acceptance of MCM-D technology, and the advantages in performance and density it affords, will be accelerated once the cost is lowered below a level which will make it competitive with other MCM technologies. The performance benefits of MCM-D are well known, but as yet do not fully offset the perceived cost disadvantage which prevents its use in commercial products. Military customers need the volume generated by commercial applications to take advantage of the Cost Function Curve. The analysis of substrate cost as a function of production volume and the correlation to numbers of substrates per manufacturing unit, or panel, size will be discussed and the effects of defect density control emphasized Hughes has an IR&D project underway to define the technology, equipment, and process breakthroughs needed to commercialize MCM-D, and to demonstrate the cost effectiveness of fabricating HDMI/sup TM/ (High Density Multichip Interconnect) substrates on large panels. Hughes is currently building production quantites of 1.8-by-3.8 inch, densely routed substrate designs for military systems on alumina, silicon, and aluminum nitride ISO mm wafers. Hughes personnel believe that the published ARPA (Advanced Research Projects Agency) goals of a factor of ten reduction in substrate cost and a factor of 10 increase in substrate capacity are achievable using the large panel format. The progress to date in this effort will be discussed, and the plans and problems discussed
通用休斯电子公司多年来一直致力于研究低成本制造多芯片模块(MCM)的方法。休斯的工程师们相信,一旦成本降低到可以与其他MCM技术竞争的水平以下,MCM- d技术及其在性能和密度方面的优势将会加速被接受。MCM-D的性能优势是众所周知的,但到目前为止还不能完全抵消阻碍其在商业产品中使用的成本劣势。军事客户需要商业应用产生的数量来利用成本函数曲线。我们将讨论作为产量函数的基板成本分析,以及与每个制造单元或面板的基板数量、尺寸的关系,并强调缺陷密度控制的影响,Hughes正在进行一个IR&D项目,以确定商业化MCM-D所需的技术、设备和工艺突破,并展示在大型面板上制造HDMI/sup TM/(高密度多芯片互连)基板的成本效益。Hughes目前正在为军事系统在氧化铝、硅和氮化铝ISO mm晶圆上进行1.8 × 3.8英寸的密集布线衬底设计。Hughes的工作人员认为,ARPA(高级研究计划局)公布的目标是,使用大面板格式可以实现基板成本降低10倍、基板容量增加10倍的目标。我们将讨论迄今为止在这方面所取得的进展,以及所讨论的计划和问题
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引用次数: 2
MCM-L Cost Model & Application Case Study MCM-L成本模型及应用案例研究
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753571
M. Begay, R. Cantwell
Since the recent advent of the MultiChip Module (MCM) technology options, many potential MCM customers are grappling on how to partition a new or existing system design to utilize the benefits of MCMs. In addition to the design issues, customers are having to look beyond the traditional board design cost models to justify the higher costs of MCMs over the single chip package options. These factors greatly influence the decision whether to design or redesign a system with an MCM. Unless the customer can readily determine whether cost savings or parity can be achieved with a MCM, the decision to use an MCM is either postponed or dropped as an alternative. This paper will outline the design and cost methods that were used in a telecommunication switching equipment application. This application substituted a multi-layer, four chip, 160 lead MCM-L PQFP (plastic quad flat pack) package in place of four single chip packages. The methods used in this case study delves beyond the traditional single chip versus multichip package comparisons to justify the use of a MCM-L package as a cost effective alternative to single chip semiconductor devices.
由于最近出现了多芯片模块(MCM)技术选项,许多潜在的MCM客户正在努力解决如何划分新的或现有的系统设计,以利用MCM的优势。除了设计问题外,客户还必须超越传统的电路板设计成本模型,以证明mcm比单芯片封装选项的成本更高。这些因素极大地影响了是否设计或重新设计带有MCM的系统的决定。除非客户能够很容易地确定MCM是否可以节省成本或实现平价,否则使用MCM的决定要么被推迟,要么被放弃。本文将概述在电信交换设备应用中所使用的设计和成本方法。该应用程序用多层、四芯片、160引脚MCM-L PQFP(塑料四平面封装)封装代替了四个单芯片封装。本案例研究中使用的方法超越了传统的单芯片与多芯片封装的比较,以证明使用MCM-L封装作为单芯片半导体器件的成本效益替代品的合理性。
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引用次数: 5
Environmental Performance of Sealed Chip-On-Board (scob) Memory Circuits 密封片上(scob)存储电路的环境性能
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753587
L. Gates, B.E. Steckler
This report presents the results of environmental testing of sealed chip-on-board (SCOB) memory circuits. Samples consisted of four SRAM chips mounted on fine line PWBs (MCM-L technology). A complete design of experiments (DOE) matrix included two PWB sources, three die attachment adhesives, one moisture passivation coating (plasma enhanced, chemical vapor deposited silicon nitride), and two encapsulants (a silicone gel and an epoxy glob-top material). DOE was also employed to set up the environmental test scheme using tests selected from MIL-STD-883, and HAST. A set of conventional thin film hybrid circuit samples packaged in hermetic ceramic packages was included in the environmental test scheme as a control. Failure analyses of test samples and conclusions on performance of adhesives and protective coatings are presented.
本文介绍了密封板上芯片(SCOB)存储电路的环境测试结果。样品由四个安装在细线PWBs (MCM-L技术)上的SRAM芯片组成。完整的实验(DOE)基质设计包括两个PWB源,三个模具附着粘合剂,一个湿钝化涂层(等离子体增强,化学气相沉积氮化硅)和两个密封剂(硅凝胶和环氧球顶材料)。DOE还使用MIL-STD-883和HAST中选择的测试来建立环境测试方案。环境试验方案采用一套密封陶瓷封装的常规薄膜混合电路样品作为对照。对试验样品进行了失效分析,并给出了胶粘剂和防护涂层性能的结论。
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引用次数: 4
An Mcm-D Foundry from Copper/polyimid Tfml Bare Substrate to Multichif Modules 从铜/聚酰亚胺tml裸基板到多模块的Mcm-D铸造
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753579
J.P. Droguet
Description of the process, based on copper conductors and polyimid as a dielectric* (1) Description of the industrial pilot (2) Process characterization (3) Let us briefly remind, as described by fig. 1 hereunder, that the technology allows the realization of a multilayer stack, with up to five levels of conductors for power, ground, two signal layers and a top layer, for components attach and interconnect.
基于铜导体和聚酰亚胺作为介质的工艺描述*(1)工业试验描述(2)工艺表征(3)让我们简要地提醒一下,如下图1所示,该技术允许实现多层堆叠,具有多达五层的导体,用于电源,接地,两层信号层和顶层,用于组件连接和互连。
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引用次数: 0
Ltcc Mcm Technology for Military Environments 用于军事环境的Mcm技术
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753616
D. R. Schroeder, L.J. Rexing
The design guidelines currently being incorporated in the design and fabrication of LTCC MCM's will be reviewed and compared to MCM-L and MCM-D design guidelines. Several examples of complex MCM's will be presented ranging in size up to 3" x 3" incorporating wire bonding as well as tab bonding. LTCC MCM technology has been established as a flexible cost effective advanced packaging concept for harsh environments.
将审查目前纳入LTCC MCM设计和制造的设计指南,并将其与MCM- l和MCM- d设计指南进行比较。将介绍几个复杂MCM的例子,其尺寸可达3“x 3”,包括线键合和标签键合。LTCC MCM技术已成为一种灵活、经济、高效的先进包装理念,适用于恶劣环境。
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引用次数: 2
Large Format Fabrication a Practical Approach to Low Cost MCM-D 大幅面制造:低成本MCM-D的实用方法
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753534
G. White, E. Perfecto, T. Demercurio, D. Mcherron, T. Redmond, M. Norcott
The IBM Microelectronics Division at East Fishkill has recently demonstrated the fabrication of thin films for MCM-D on large area panels, 300 mm x 300 mm in size. Fabrication of the thin films was accomplished on IBM's 300 mm development Line using immersion development of photosensitive polyimide for via formation and electrolytic plating to define wiring and terminal metal Levels. One plane pair of thin films was constructed on Corning glass 7059 panels for 35 micron Lines on 85 micron pitch. In addition, two metal - dielectric Levels with 13 um lines on 25 um pitch has also been demonstrated. The 25 um pitch represents the most aggressive groundrule practiced in electronic packaging today. The successful production of electrically good substrates at a high yield from a 300 mm panel provides a gateway to significant cost reductions of future MCM-D products from IBM. In this paper we will discuss the processes and equipment used to fabricate two different test vehicles, as welt as some of cost and yield considerations associated with Large area panel processing for MCM-D packages.
位于East Fishkill的IBM微电子部门最近展示了在300 mm x 300 mm尺寸的大面积面板上制造MCM-D薄膜。薄膜的制造是在IBM的300mm显影线上完成的,使用光敏聚酰亚胺的浸没显影,用于通孔形成和电解电镀,以定义布线和终端金属水平。在康宁7059玻璃面板上构建了一对平面薄膜,用于85微米间距的35微米线。此外,还证明了在25um间距上具有13um线的两个金属介电电平。25微米的间距代表了当今电子封装中最具侵略性的接地规则。从300毫米面板上成功生产出高成品率的良好电基板,为IBM未来MCM-D产品的显着降低成本提供了一个途径。在本文中,我们将讨论用于制造两种不同测试车辆的工艺和设备,以及与MCM-D封装的大面积面板加工相关的一些成本和良率考虑因素。
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引用次数: 1
Effects of Ceramic Ball-Grid-Array Package's Manufacturing Variations on Solder Joint Reliability 陶瓷球栅阵列封装工艺变化对焊点可靠性的影响
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753599
T. Ju, Y.C. Lee
The effects of manufacturing variations on the reliability of solder joints between a ceramic ball grid array (BGA) package and a printed wiring board (PWB) are investigated. Three manufacturing parameters tinder consideration are 1) solder volume, 2) solder height, and 3) solder pad size. To study the manufacturing effects, a solder joint profile model is derived. Then the maximum strain is calculated, and the fatigue life of the solder joint is predicted. The accuracy of the solder profile model is verified by comparing its predicted profiles with experimental results. The fatigue life of a solder joint is estimated by the Coffin-Manson's relation. The calculations show that the manufacturing variations change the joint profile, and subsequently affect the fatigue life. The solder joints formed may have convex, cylindrical and concave profiles. The concave solder joints are preferred, which have long fatigue lives and are less sensitive to the manufacturing variations. For the convex solder joints, their fatigue lives are strongly affected by the joint height variation and by the combined effects of solder volume and pad size.
研究了陶瓷球栅阵列(BGA)封装与印刷线路板(PWB)之间焊点可靠性的影响。tinder考虑的三个制造参数是1)焊料体积,2)焊料高度和3)焊料垫尺寸。为了研究焊点的制造效果,建立了焊点轮廓模型。然后计算最大应变,预测焊点的疲劳寿命。通过与实验结果的比较,验证了模型的准确性。用Coffin-Manson关系估计了焊点的疲劳寿命。计算结果表明,制造工艺的变化改变了接头的外形,进而影响了接头的疲劳寿命。所形成的焊点可以具有凸、圆柱和凹轮廓。凹形焊点具有较长的疲劳寿命,对制造变化的敏感性较低。对于凸焊点,其疲劳寿命受焊点高度变化以及焊料体积和焊盘尺寸的共同影响。
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引用次数: 4
Electroless Nickel/Copper Plating as a New Bump Metallization 化学镀镍/镀铜是一种新的凹凸金属化方法
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753580
R. Aschenbrenner, A. Ostmann, U. Beutler, J. Simon, H. Reichl
An electroless bumping method was developed both for Rip-Chip and TAB applications. Electroless Ni/Cu plating is a maskless low cost approach to bumping directly on aluminum bondpads. An immersion tin layer for coating and soldering is plated on the copper. Due to the high alkalinity (pH>12) of electroless Cu baths, a thick Ni layer of about 7 P/spl mu/m is required on the aluminum for sealing. A shear strength of 180 cN and a contact resistance of less than 2 m/spl omega/ for the bumps were obtained. Because of the high hardness of nickel, conventional gang bonding techniques are not applicable. The hardness of electroless copper is about 200 mHV25 and after annealing in the range of 130-150 mHV25. Thermocompression gang bonding of Au plated tape to the Ni/Cu/Sn metallization was carded out. The average pull strength was 50 cN. Further investigations of the deposited copper are the influence of the size and electroless solder plating.
提出了一种适用于Rip-Chip和TAB的化学碰撞方法。化学镀镍/铜是一种无掩膜的低成本方法,可以直接撞击铝键垫。在铜上镀有用于涂覆和焊接的浸锡层。由于化学镀铜液的碱度高(pH>12),在铝上需要一层约7 P/spl mu/m的厚Ni层来密封。抗剪强度为180 cN,接触电阻小于2 m/spl ω /。由于镍的硬度高,传统的焊接技术不适用。化学镀铜的硬度在200 mHV25左右,退火后的硬度在130-150 mHV25之间。研究了镀金带与Ni/Cu/Sn镀层的热压键合。平均拉力为50 cN。进一步研究了沉积铜的尺寸和化学焊镀的影响。
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引用次数: 30
Reliability Comparison of Two Metallurgies for Ceramic Ball Grid Array 两种金属陶瓷球栅阵列的可靠性比较
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753601
D. R. Banks, T.E. Bunette, R. Gerke, E. Mammo, S. Mattay
Surface-mountable ceramic ball grid array (CBGA) packages have proven to be attractive in a variety of applications as designers seek to maximize electrical performance, reduce card real estate, and improve manufacturing process yields. In support of the PowerPC/sup TM/ family of microprocessors, 21mm CBGA packages (256 leads) were used to evaluate two different ball metalturgies--90/10 Pb/Sn and 62/36/2 Sn/Pb/Ag. Test modules were assembled to printed circuit cards and cycled at 0 to 100/spl deg/C and -40 to 125/spl deg/C. Ball attach techniques and module-to-card assembly processes are described, including screening, placement, and reflow. Failure mechanisms and reliability are discussed for both metallurgies.
表面贴装陶瓷球网格阵列(CBGA)封装已被证明在各种应用中具有吸引力,因为设计人员寻求最大限度地提高电气性能,减少卡的占用,并提高制造工艺的产量。为了支持PowerPC/sup TM/系列微处理器,使用21mm CBGA封装(256引线)来评估两种不同的球金相-90/10 Pb/Sn和62/36/2 Sn/Pb/Ag。测试模块组装到印刷电路板上,并在0至100/spl°C和-40至125/spl°C下循环。描述了球附加技术和模块到卡组装过程,包括筛选,放置和回流。讨论了两种冶金方法的失效机理和可靠性。
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引用次数: 24
期刊
Proceedings of the International Conference on Multichip Modules
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