Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272020
Jaesun Lee, Dongmin Liu, Wu Lu
A method to enhance the breakdown voltage performance of AlGaN/GaN HEMTs using post-annealing technique is reported in this paper. The transistors were annealed at 900 /spl deg/C for 30 seconds in a rapid thermal annealing system. After metallization, devices were annealed at 700 /spl deg/C in a furnace to improve breakdown voltages. The typical drain current-voltage characteristics of HEMTdevice with 0.3 /spl mu/m gate length and 100 /spl mu/m gate width is studied by experimental results.
{"title":"Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors using annealing technique","authors":"Jaesun Lee, Dongmin Liu, Wu Lu","doi":"10.1109/ISDRS.2003.1272020","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272020","url":null,"abstract":"A method to enhance the breakdown voltage performance of AlGaN/GaN HEMTs using post-annealing technique is reported in this paper. The transistors were annealed at 900 /spl deg/C for 30 seconds in a rapid thermal annealing system. After metallization, devices were annealed at 700 /spl deg/C in a furnace to improve breakdown voltages. The typical drain current-voltage characteristics of HEMTdevice with 0.3 /spl mu/m gate length and 100 /spl mu/m gate width is studied by experimental results.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132767100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1271982
J. Ackaert, T. Vermeulen, A. Lowe, S. Boonen, T. Yao, J. Prasad, M. Thomason, J. van Houdt, R. Degraeve, L. Haspeslagh, P. Hendrickx
The purpose of this paper is to characterize, to compare different types of tunnel oxides and to determine the impact on the MB (Moving Bit measurement) issues. The measurements and comparison carried out for the following tunnel oxide thickness in the range of 8 to 10 nm is used. They are: (1) Dry oxidation at 900 C which gives acceptable oxide quality in the thickness range of 100 /spl Aring/ (2) 5% O/sub 2/ diluted oxidation at 900 C, (3) 5% O/sub 2/ diluted oxidation at 960 C and (4) Wet oxidation at 750 C which gives superior results even for a minimal oxide thickness of 88.9 /spl Aring/.
{"title":"Characterization of tunnel oxides for non-volatile memory (NVM) applications","authors":"J. Ackaert, T. Vermeulen, A. Lowe, S. Boonen, T. Yao, J. Prasad, M. Thomason, J. van Houdt, R. Degraeve, L. Haspeslagh, P. Hendrickx","doi":"10.1109/ISDRS.2003.1271982","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1271982","url":null,"abstract":"The purpose of this paper is to characterize, to compare different types of tunnel oxides and to determine the impact on the MB (Moving Bit measurement) issues. The measurements and comparison carried out for the following tunnel oxide thickness in the range of 8 to 10 nm is used. They are: (1) Dry oxidation at 900 C which gives acceptable oxide quality in the thickness range of 100 /spl Aring/ (2) 5% O/sub 2/ diluted oxidation at 900 C, (3) 5% O/sub 2/ diluted oxidation at 960 C and (4) Wet oxidation at 750 C which gives superior results even for a minimal oxide thickness of 88.9 /spl Aring/.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130904142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272142
D. Woolard, Weidong Zhang, B. Gelmont
A novel type of interband-RTD (I-RTD) based upon staggered-bandgap heterostructures was investigated. A detailed theoretical analysis of the time-dependent characteristics of an I-RTD based upon a type-II resonant tunneling heterostructure is presented. Specifically, an AlGaSb/InAs/AlGaSb double-barrier structure was considered to determine the influence of multi-band transport effects on the static and dynamic behavior of the I-RTD device.
{"title":"A novel interband-resonant-tunneling-diode(I-RTD) based high-frequency oscillator","authors":"D. Woolard, Weidong Zhang, B. Gelmont","doi":"10.1109/ISDRS.2003.1272142","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272142","url":null,"abstract":"A novel type of interband-RTD (I-RTD) based upon staggered-bandgap heterostructures was investigated. A detailed theoretical analysis of the time-dependent characteristics of an I-RTD based upon a type-II resonant tunneling heterostructure is presented. Specifically, an AlGaSb/InAs/AlGaSb double-barrier structure was considered to determine the influence of multi-band transport effects on the static and dynamic behavior of the I-RTD device.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116909378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272372
T. Suligoj, Haitao Liu, J. Sin, K. Tsui, K.J. Chen, P. Biljanovic, K. Wang
In this paper, we present a scaled transistor processed with the improved technology, resulting in the enhancement of its electrical performance. The electrical characteristics such as collector-emitter breakdown, charge sharing of the processed transistor is presented. The electrical properties of HCBTs are compared with the existing LBTs (Lateral Bipolar Transistors). This HCBT technology was applied in the BiCMOS integration with FinFETs.
{"title":"A low-cost Horizontal Current Bipolar Transistor (HCBT) technology for the BiCMOS integration with FinFETs","authors":"T. Suligoj, Haitao Liu, J. Sin, K. Tsui, K.J. Chen, P. Biljanovic, K. Wang","doi":"10.1109/ISDRS.2003.1272372","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272372","url":null,"abstract":"In this paper, we present a scaled transistor processed with the improved technology, resulting in the enhancement of its electrical performance. The electrical characteristics such as collector-emitter breakdown, charge sharing of the processed transistor is presented. The electrical properties of HCBTs are compared with the existing LBTs (Lateral Bipolar Transistors). This HCBT technology was applied in the BiCMOS integration with FinFETs.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"207 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128330503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272072
T. Ikari, K. Imai, S. Fukushima, M. Kondow
In this paper, we report on the temperature variation of the piezoelectric photothermal spectroscopy (PPTS) of GaInNAs SQW structure with 5 m thickness and discuss the electron transition mechanism in the well from the viewpoint of nonradiative recombination.
{"title":"Temperature variation of nonradiative electron transitions in GaInNAs/GaAs SQW investigated by a piezoelectric photothermal spectroscopy","authors":"T. Ikari, K. Imai, S. Fukushima, M. Kondow","doi":"10.1109/ISDRS.2003.1272072","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272072","url":null,"abstract":"In this paper, we report on the temperature variation of the piezoelectric photothermal spectroscopy (PPTS) of GaInNAs SQW structure with 5 m thickness and discuss the electron transition mechanism in the well from the viewpoint of nonradiative recombination.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122650580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272013
Yu-Li Tsai, Cheng-Liang Wang, Po-Hung Lin, W. Liao, J. Gong
In this presentation, we report strain induced compositional pulling phenomenon in high Al content AlGaN films grown on AlN-coated sapphire substrates. It was found that Al constituent in a high Al content AlGaN film was expelled out of the film in the initial stage of the growth followed by the growth of a AlGaN film having higher Al content. The AlGaN films were characterized by X-ray diffractometry (XRD) for composition evaluation. Absorption spectroscopy was employed for the measurements of absorption spectra of the AlGaN films.
{"title":"Compositional pulling effect in high Al-content AlGaN films grown on (0001) sapphire substrates","authors":"Yu-Li Tsai, Cheng-Liang Wang, Po-Hung Lin, W. Liao, J. Gong","doi":"10.1109/ISDRS.2003.1272013","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272013","url":null,"abstract":"In this presentation, we report strain induced compositional pulling phenomenon in high Al content AlGaN films grown on AlN-coated sapphire substrates. It was found that Al constituent in a high Al content AlGaN film was expelled out of the film in the initial stage of the growth followed by the growth of a AlGaN film having higher Al content. The AlGaN films were characterized by X-ray diffractometry (XRD) for composition evaluation. Absorption spectroscopy was employed for the measurements of absorption spectra of the AlGaN films.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116943785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272179
Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa
Recent progress in CMOS LSI fabrication technology made possible to achieve nanometre-size silicon device. The devices should operate with CMOS transistors to efficiently use high sophisticated CMOS technologies. To achieve high functionality, especially using silicon as a base the difficulty arises in making the coherent length sufficiently longer than the device size. Another candidate is a single-electron transistor (SET), which does not use coherency. The device manipulates a single electron by means of a Coulomb blockade. Fabricating SETs using Si MOS process has been useful in overcoming because SETs were combined with MOSFET. This allows to emphasize the special functionality of SETs like multiple-valued operation, and high voltage gain.
{"title":"Silicon nano-devices and single-electron devices","authors":"Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa","doi":"10.1109/ISDRS.2003.1272179","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272179","url":null,"abstract":"Recent progress in CMOS LSI fabrication technology made possible to achieve nanometre-size silicon device. The devices should operate with CMOS transistors to efficiently use high sophisticated CMOS technologies. To achieve high functionality, especially using silicon as a base the difficulty arises in making the coherent length sufficiently longer than the device size. Another candidate is a single-electron transistor (SET), which does not use coherency. The device manipulates a single electron by means of a Coulomb blockade. Fabricating SETs using Si MOS process has been useful in overcoming because SETs were combined with MOSFET. This allows to emphasize the special functionality of SETs like multiple-valued operation, and high voltage gain.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116265779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272048
S. Mcalister, W. Mckinnon, S. Kovacic, H. Lafontaine
Bipolar transistors with multiple emitters are used to achieve high currents and the maximum utilization of emitter area. The multi-emitter SiGe HBTs fabricated in a modified Si BiCMOS technology is studied in this paper. The heating and thermal coupling between the emitters of a multiple emitter SiGe HBT were measured along the emitter length. This measurement provides useful information about the temperature increases in multi-emitter devices and the emitter-emitter thermal coupling. Temperature dependence of the normalized emitter currents and power dependence of the monitored emitter currents were studied through experiments.
{"title":"Heating in multi-emitter SiGe HBTs","authors":"S. Mcalister, W. Mckinnon, S. Kovacic, H. Lafontaine","doi":"10.1109/ISDRS.2003.1272048","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272048","url":null,"abstract":"Bipolar transistors with multiple emitters are used to achieve high currents and the maximum utilization of emitter area. The multi-emitter SiGe HBTs fabricated in a modified Si BiCMOS technology is studied in this paper. The heating and thermal coupling between the emitters of a multiple emitter SiGe HBT were measured along the emitter length. This measurement provides useful information about the temperature increases in multi-emitter devices and the emitter-emitter thermal coupling. Temperature dependence of the normalized emitter currents and power dependence of the monitored emitter currents were studied through experiments.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"224 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127529128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272119
Y. Melnik, O. Kovalenkov, V. Soukhoveev, V. Ivantsov, Y. V. Shapovalova, A. Usikov, V. Dmitriev
Heteroepitaxial growth of group III nitride layers on SiC substrates by hydride vapour phase epitaxy (HVPE) is described in this paper. AlN, GaN, and AlGaN epitaxial layers were grown on 2-inch SiC substrates with a growth rate ranging from 0.2 to 1.5 /spl ges/m/min. The reciprocal space maps for the thin and thick AlN layers grown on SiC substrates is presented. Dependence of etch pit density in AlN layers on layer thickness is illustrated. X-ray theta-omega scan for GaN/AlN/SiC heterostructure was showed.
{"title":"Heteroepitaxial growth of GaN, AlN, and AlGaN layers on SiC substrates by HVPE","authors":"Y. Melnik, O. Kovalenkov, V. Soukhoveev, V. Ivantsov, Y. V. Shapovalova, A. Usikov, V. Dmitriev","doi":"10.1109/ISDRS.2003.1272119","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272119","url":null,"abstract":"Heteroepitaxial growth of group III nitride layers on SiC substrates by hydride vapour phase epitaxy (HVPE) is described in this paper. AlN, GaN, and AlGaN epitaxial layers were grown on 2-inch SiC substrates with a growth rate ranging from 0.2 to 1.5 /spl ges/m/min. The reciprocal space maps for the thin and thick AlN layers grown on SiC substrates is presented. Dependence of etch pit density in AlN layers on layer thickness is illustrated. X-ray theta-omega scan for GaN/AlN/SiC heterostructure was showed.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"11954 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127570259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272007
H. Mu, H. Shen, D. Klotzkin
In this paper, we study about the effect of growth kinetics, governed by deposition conditions, on the formation of pinholes is studied in order to optimize the film growth conditions. The morphology of the resultant film observed under an SEM and AFM. Surface morphology of thermal evaporated TPD/Alq/sub 3/double layer show strong dependence on the evaporation rate, and the high evaporation rate, which result in dense and texture films, is more for the illumination of organic luminescent diode.
{"title":"Dependence of film morphology on growth rate in ITO/TPD/Alq/sub 3//Al organic luminescent diodes","authors":"H. Mu, H. Shen, D. Klotzkin","doi":"10.1109/ISDRS.2003.1272007","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272007","url":null,"abstract":"In this paper, we study about the effect of growth kinetics, governed by deposition conditions, on the formation of pinholes is studied in order to optimize the film growth conditions. The morphology of the resultant film observed under an SEM and AFM. Surface morphology of thermal evaporated TPD/Alq/sub 3/double layer show strong dependence on the evaporation rate, and the high evaporation rate, which result in dense and texture films, is more for the illumination of organic luminescent diode.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125296215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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