Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272016
S. Chang, Y. Su, T. Kuan, C. H. Ko, S.C. Wei, W. Lan, Y. Cherng, S.C. Chen
Nitride-based Al/sub 0.24/Ga/sub 0.76/N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were fabricated. The results found that the enhanced 2 dimensional electron gas (2DEG) carrier mobility from 1070 to 1180 cm/sup 2/V/sup -1/sec/sup -1/ by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp/sub 2/Mg flow rate of 2.36/spl times/10/sup -8/ mole/min and smoother sample surface. The DC and RF characteristics of these HFETs were also good.
{"title":"Nitride-based HFETs with carrier confinement layers","authors":"S. Chang, Y. Su, T. Kuan, C. H. Ko, S.C. Wei, W. Lan, Y. Cherng, S.C. Chen","doi":"10.1109/ISDRS.2003.1272016","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272016","url":null,"abstract":"Nitride-based Al/sub 0.24/Ga/sub 0.76/N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were fabricated. The results found that the enhanced 2 dimensional electron gas (2DEG) carrier mobility from 1070 to 1180 cm/sup 2/V/sup -1/sec/sup -1/ by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp/sub 2/Mg flow rate of 2.36/spl times/10/sup -8/ mole/min and smoother sample surface. The DC and RF characteristics of these HFETs were also good.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125930093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272024
Shuntao Hu, K. Sheng
In this paper, a new technique utilizing dielectric mesa is proposed for SiC power devices to address the existing termination challenges associated with oxide breakdown and implantation induced reverse leakage.
{"title":"A new edge termination technique for SiC power devices","authors":"Shuntao Hu, K. Sheng","doi":"10.1109/ISDRS.2003.1272024","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272024","url":null,"abstract":"In this paper, a new technique utilizing dielectric mesa is proposed for SiC power devices to address the existing termination challenges associated with oxide breakdown and implantation induced reverse leakage.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"11 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113990139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272110
T. D. Boone, H. Tsukamoto, J. Woodall
A potential luminesence intensity modulation technique in LED utilizing lateral carrier drift and optical exit apertures has been proposed. An externally applied lateral voltage can dynamically control both the external intensity and the spatial position of a photoluminescence spot from a GaAs region. Lateral drift of the photogenerated electrons from their original position by the electric field resulting from the applied voltage produces these effects. If the bulk of the electrons are transported outside the spatial limits of the area defined to be the exit aperture before recombining the external light emission from the semiconductor is effectively attenuated. This technique, referred to as field aperture selection transport (FAST).
{"title":"Rapid modulation of GaAs luminesence intensity using lateral drift with selectable apertures","authors":"T. D. Boone, H. Tsukamoto, J. Woodall","doi":"10.1109/ISDRS.2003.1272110","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272110","url":null,"abstract":"A potential luminesence intensity modulation technique in LED utilizing lateral carrier drift and optical exit apertures has been proposed. An externally applied lateral voltage can dynamically control both the external intensity and the spatial position of a photoluminescence spot from a GaAs region. Lateral drift of the photogenerated electrons from their original position by the electric field resulting from the applied voltage produces these effects. If the bulk of the electrons are transported outside the spatial limits of the area defined to be the exit aperture before recombining the external light emission from the semiconductor is effectively attenuated. This technique, referred to as field aperture selection transport (FAST).","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123053257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272161
C. Richter, C. Hacker, L. Richter
This paper presents the results of studies of solution-based attachment of long-chain aliphatic molecules to hydrogen-terminated Si surfaces to pursue the electrical properties of organic monolayers and as a first step towards creating hybrid silicon-molecular nanoelectronic devices. The effect of differing alkane chain length on the electrical properties were measured. To investigate the quality of the organic monolayers measured in these devices, they were physically and chemically characterized with infrared spectroscopy, spectroscopic ellipsometry, and contact angle measurement.
{"title":"Molecular devices formed by direct monolayer attachment to silicon","authors":"C. Richter, C. Hacker, L. Richter","doi":"10.1109/ISDRS.2003.1272161","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272161","url":null,"abstract":"This paper presents the results of studies of solution-based attachment of long-chain aliphatic molecules to hydrogen-terminated Si surfaces to pursue the electrical properties of organic monolayers and as a first step towards creating hybrid silicon-molecular nanoelectronic devices. The effect of differing alkane chain length on the electrical properties were measured. To investigate the quality of the organic monolayers measured in these devices, they were physically and chemically characterized with infrared spectroscopy, spectroscopic ellipsometry, and contact angle measurement.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129311140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272072
T. Ikari, K. Imai, S. Fukushima, M. Kondow
In this paper, we report on the temperature variation of the piezoelectric photothermal spectroscopy (PPTS) of GaInNAs SQW structure with 5 m thickness and discuss the electron transition mechanism in the well from the viewpoint of nonradiative recombination.
{"title":"Temperature variation of nonradiative electron transitions in GaInNAs/GaAs SQW investigated by a piezoelectric photothermal spectroscopy","authors":"T. Ikari, K. Imai, S. Fukushima, M. Kondow","doi":"10.1109/ISDRS.2003.1272072","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272072","url":null,"abstract":"In this paper, we report on the temperature variation of the piezoelectric photothermal spectroscopy (PPTS) of GaInNAs SQW structure with 5 m thickness and discuss the electron transition mechanism in the well from the viewpoint of nonradiative recombination.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122650580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272013
Yu-Li Tsai, Cheng-Liang Wang, Po-Hung Lin, W. Liao, J. Gong
In this presentation, we report strain induced compositional pulling phenomenon in high Al content AlGaN films grown on AlN-coated sapphire substrates. It was found that Al constituent in a high Al content AlGaN film was expelled out of the film in the initial stage of the growth followed by the growth of a AlGaN film having higher Al content. The AlGaN films were characterized by X-ray diffractometry (XRD) for composition evaluation. Absorption spectroscopy was employed for the measurements of absorption spectra of the AlGaN films.
{"title":"Compositional pulling effect in high Al-content AlGaN films grown on (0001) sapphire substrates","authors":"Yu-Li Tsai, Cheng-Liang Wang, Po-Hung Lin, W. Liao, J. Gong","doi":"10.1109/ISDRS.2003.1272013","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272013","url":null,"abstract":"In this presentation, we report strain induced compositional pulling phenomenon in high Al content AlGaN films grown on AlN-coated sapphire substrates. It was found that Al constituent in a high Al content AlGaN film was expelled out of the film in the initial stage of the growth followed by the growth of a AlGaN film having higher Al content. The AlGaN films were characterized by X-ray diffractometry (XRD) for composition evaluation. Absorption spectroscopy was employed for the measurements of absorption spectra of the AlGaN films.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116943785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272179
Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa
Recent progress in CMOS LSI fabrication technology made possible to achieve nanometre-size silicon device. The devices should operate with CMOS transistors to efficiently use high sophisticated CMOS technologies. To achieve high functionality, especially using silicon as a base the difficulty arises in making the coherent length sufficiently longer than the device size. Another candidate is a single-electron transistor (SET), which does not use coherency. The device manipulates a single electron by means of a Coulomb blockade. Fabricating SETs using Si MOS process has been useful in overcoming because SETs were combined with MOSFET. This allows to emphasize the special functionality of SETs like multiple-valued operation, and high voltage gain.
{"title":"Silicon nano-devices and single-electron devices","authors":"Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa","doi":"10.1109/ISDRS.2003.1272179","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272179","url":null,"abstract":"Recent progress in CMOS LSI fabrication technology made possible to achieve nanometre-size silicon device. The devices should operate with CMOS transistors to efficiently use high sophisticated CMOS technologies. To achieve high functionality, especially using silicon as a base the difficulty arises in making the coherent length sufficiently longer than the device size. Another candidate is a single-electron transistor (SET), which does not use coherency. The device manipulates a single electron by means of a Coulomb blockade. Fabricating SETs using Si MOS process has been useful in overcoming because SETs were combined with MOSFET. This allows to emphasize the special functionality of SETs like multiple-valued operation, and high voltage gain.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116265779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272048
S. Mcalister, W. Mckinnon, S. Kovacic, H. Lafontaine
Bipolar transistors with multiple emitters are used to achieve high currents and the maximum utilization of emitter area. The multi-emitter SiGe HBTs fabricated in a modified Si BiCMOS technology is studied in this paper. The heating and thermal coupling between the emitters of a multiple emitter SiGe HBT were measured along the emitter length. This measurement provides useful information about the temperature increases in multi-emitter devices and the emitter-emitter thermal coupling. Temperature dependence of the normalized emitter currents and power dependence of the monitored emitter currents were studied through experiments.
{"title":"Heating in multi-emitter SiGe HBTs","authors":"S. Mcalister, W. Mckinnon, S. Kovacic, H. Lafontaine","doi":"10.1109/ISDRS.2003.1272048","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272048","url":null,"abstract":"Bipolar transistors with multiple emitters are used to achieve high currents and the maximum utilization of emitter area. The multi-emitter SiGe HBTs fabricated in a modified Si BiCMOS technology is studied in this paper. The heating and thermal coupling between the emitters of a multiple emitter SiGe HBT were measured along the emitter length. This measurement provides useful information about the temperature increases in multi-emitter devices and the emitter-emitter thermal coupling. Temperature dependence of the normalized emitter currents and power dependence of the monitored emitter currents were studied through experiments.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"224 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127529128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272119
Y. Melnik, O. Kovalenkov, V. Soukhoveev, V. Ivantsov, Y. V. Shapovalova, A. Usikov, V. Dmitriev
Heteroepitaxial growth of group III nitride layers on SiC substrates by hydride vapour phase epitaxy (HVPE) is described in this paper. AlN, GaN, and AlGaN epitaxial layers were grown on 2-inch SiC substrates with a growth rate ranging from 0.2 to 1.5 /spl ges/m/min. The reciprocal space maps for the thin and thick AlN layers grown on SiC substrates is presented. Dependence of etch pit density in AlN layers on layer thickness is illustrated. X-ray theta-omega scan for GaN/AlN/SiC heterostructure was showed.
{"title":"Heteroepitaxial growth of GaN, AlN, and AlGaN layers on SiC substrates by HVPE","authors":"Y. Melnik, O. Kovalenkov, V. Soukhoveev, V. Ivantsov, Y. V. Shapovalova, A. Usikov, V. Dmitriev","doi":"10.1109/ISDRS.2003.1272119","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272119","url":null,"abstract":"Heteroepitaxial growth of group III nitride layers on SiC substrates by hydride vapour phase epitaxy (HVPE) is described in this paper. AlN, GaN, and AlGaN epitaxial layers were grown on 2-inch SiC substrates with a growth rate ranging from 0.2 to 1.5 /spl ges/m/min. The reciprocal space maps for the thin and thick AlN layers grown on SiC substrates is presented. Dependence of etch pit density in AlN layers on layer thickness is illustrated. X-ray theta-omega scan for GaN/AlN/SiC heterostructure was showed.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"11954 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127570259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272007
H. Mu, H. Shen, D. Klotzkin
In this paper, we study about the effect of growth kinetics, governed by deposition conditions, on the formation of pinholes is studied in order to optimize the film growth conditions. The morphology of the resultant film observed under an SEM and AFM. Surface morphology of thermal evaporated TPD/Alq/sub 3/double layer show strong dependence on the evaporation rate, and the high evaporation rate, which result in dense and texture films, is more for the illumination of organic luminescent diode.
{"title":"Dependence of film morphology on growth rate in ITO/TPD/Alq/sub 3//Al organic luminescent diodes","authors":"H. Mu, H. Shen, D. Klotzkin","doi":"10.1109/ISDRS.2003.1272007","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272007","url":null,"abstract":"In this paper, we study about the effect of growth kinetics, governed by deposition conditions, on the formation of pinholes is studied in order to optimize the film growth conditions. The morphology of the resultant film observed under an SEM and AFM. Surface morphology of thermal evaporated TPD/Alq/sub 3/double layer show strong dependence on the evaporation rate, and the high evaporation rate, which result in dense and texture films, is more for the illumination of organic luminescent diode.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125296215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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