Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272059
S. Kang, P. Burke, L. Pfeiffer, K. West
Ballistic transport is nothing but an electron transport in the limit (/spl omega//spl tau//sub m/ > 1); the electron move without scattering between electric field cycles. Diffusive transport can be defined as the lower frequency range (/spl omega//spl tau//sub m/<1); in the diffusive limit there are many scattering events between electric field cycles. Here we measure for the first time the crossover from diffusive to ballistic transport as a function of frequency in a dc contacted 2DEG.
{"title":"Crossover from diffusive to ballistic transport as a function of frequency in a two dimensional electron gas","authors":"S. Kang, P. Burke, L. Pfeiffer, K. West","doi":"10.1109/ISDRS.2003.1272059","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272059","url":null,"abstract":"Ballistic transport is nothing but an electron transport in the limit (/spl omega//spl tau//sub m/ > 1); the electron move without scattering between electric field cycles. Diffusive transport can be defined as the lower frequency range (/spl omega//spl tau//sub m/<1); in the diffusive limit there are many scattering events between electric field cycles. Here we measure for the first time the crossover from diffusive to ballistic transport as a function of frequency in a dc contacted 2DEG.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114209013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272001
C. Munasinghe, J. Heikenfeld, R. Dorey, R. Whatmore, J. Bender, J. Wager, A. Steckl
In this paper, we report on the optimization of TDEL devices in both the phosphor material and the device structure. The TDEL device consists of a metal-insulator-semiconductor-insulator-metal (MISIM) stacked film structure built upon a transparent glass substrate. The high dielectric constant and break down field of PZT thick dielectric film along with the other thin film stacks has enabled a significantly higher charge (>3 /spl mu/C/cm/sup 2/) transport across the phosphor layer. Furthermore, the nano-porous PZT film has reduced the intensity of high field points in the device, resulting in a steeper luminance-voltage slope after device turn-on. We have also found that the phosphor electric field of the TDEL surpasses that of a thin film electroluminescent (TFEL) device, resulting in higher efficiencies under same biasing conditions.
{"title":"Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films","authors":"C. Munasinghe, J. Heikenfeld, R. Dorey, R. Whatmore, J. Bender, J. Wager, A. Steckl","doi":"10.1109/ISDRS.2003.1272001","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272001","url":null,"abstract":"In this paper, we report on the optimization of TDEL devices in both the phosphor material and the device structure. The TDEL device consists of a metal-insulator-semiconductor-insulator-metal (MISIM) stacked film structure built upon a transparent glass substrate. The high dielectric constant and break down field of PZT thick dielectric film along with the other thin film stacks has enabled a significantly higher charge (>3 /spl mu/C/cm/sup 2/) transport across the phosphor layer. Furthermore, the nano-porous PZT film has reduced the intensity of high field points in the device, resulting in a steeper luminance-voltage slope after device turn-on. We have also found that the phosphor electric field of the TDEL surpasses that of a thin film electroluminescent (TFEL) device, resulting in higher efficiencies under same biasing conditions.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114218000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272076
M. Reaz, F.M. Yasin, M. Sulaiman, M.A.M. Ali
This paper presents an approach to design and develop a VLSI system for the simultaneous logic and IDDQ testing of CMOS ICs with mixed-mode testing facility for sequential circuits. The work involves the design of an interfacing unit on PCB containing interfacing circuits for parallel data exchange between a test processor and a microcomputer. This allows IDDQ measurement for every vector used for logic testing, performing logic testing simultaneously, providing a promising IDDQ fault coverage and reducing substantially the time and cost of testing. Three basic test development strategies are considered. They are functional test development, structural test development and physical defect test development. Mixed-mode testing facility is adopted to enhance the performance and reduce the testing time.
{"title":"The simultaneous logic and IDDQ testing of CMOS ICs with mixed-mode testing facility for sequential circuits","authors":"M. Reaz, F.M. Yasin, M. Sulaiman, M.A.M. Ali","doi":"10.1109/ISDRS.2003.1272076","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272076","url":null,"abstract":"This paper presents an approach to design and develop a VLSI system for the simultaneous logic and IDDQ testing of CMOS ICs with mixed-mode testing facility for sequential circuits. The work involves the design of an interfacing unit on PCB containing interfacing circuits for parallel data exchange between a test processor and a microcomputer. This allows IDDQ measurement for every vector used for logic testing, performing logic testing simultaneously, providing a promising IDDQ fault coverage and reducing substantially the time and cost of testing. Three basic test development strategies are considered. They are functional test development, structural test development and physical defect test development. Mixed-mode testing facility is adopted to enhance the performance and reduce the testing time.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120963040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272147
P. Fazan, S. Okhonin, M. Nagoga
This paper presents low power writing mechanisms for the ultra dense capacitor less RAM cell on SOI (silicon-on-insulator). By exploiting band to band tunneling and negative voltages, no current flows in the cell during writing and large programming windows is obtained. First results on data disturb is presented. evidence of a charge pumping related related gate disturb is shown.
{"title":"A CMOS compatible low power ultra dense capacitor less SOI RAM","authors":"P. Fazan, S. Okhonin, M. Nagoga","doi":"10.1109/ISDRS.2003.1272147","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272147","url":null,"abstract":"This paper presents low power writing mechanisms for the ultra dense capacitor less RAM cell on SOI (silicon-on-insulator). By exploiting band to band tunneling and negative voltages, no current flows in the cell during writing and large programming windows is obtained. First results on data disturb is presented. evidence of a charge pumping related related gate disturb is shown.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"269 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120985992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272137
M. Das, J. Sumakeris, S. Krishnaswami, M. Paisley, A. Agarwal, A. Powell
The 4H-SiC PiN diode is an attractive choice as a high power rectifier. 4H-SiC material technology has advanced to allow the realization of high power PiN diodes. In order to fabricate PiN diodes, nitrogen doped epilayers were grown on conducting 4HN SiC substrates. Stacking fault affect the device performance. Blocking capability, forward and reverse characteristics are explained. Long term forward voltage stability measurements were made on these devices by applying a constant forward current density.
{"title":"Latest advances in high voltage, drift free 4H-SiC p-i-n diodes","authors":"M. Das, J. Sumakeris, S. Krishnaswami, M. Paisley, A. Agarwal, A. Powell","doi":"10.1109/ISDRS.2003.1272137","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272137","url":null,"abstract":"The 4H-SiC PiN diode is an attractive choice as a high power rectifier. 4H-SiC material technology has advanced to allow the realization of high power PiN diodes. In order to fabricate PiN diodes, nitrogen doped epilayers were grown on conducting 4HN SiC substrates. Stacking fault affect the device performance. Blocking capability, forward and reverse characteristics are explained. Long term forward voltage stability measurements were made on these devices by applying a constant forward current density.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124921156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272113
T. Crowe
The terahertz frequency band, spanning from roughly 100 GHz to 10 THz, is the most scientifically rich, unexplored region of electromagnetic spectrum. This frequency band is useful for scientific, military and commercial applications as the microwave and far-infrared bands. The aim of this paper is to build sources and detectors that span the entire terahertz technology gap. This has primarily been achieved through the use of nonlinear diodes to extend microwave functionality to high frequencies. GaAs is the material of choice for the nonlinear diodes because of its high electron mobility. Here the voltages, currents and their effect on the electrons in the microwave frequency devices are also considered.
{"title":"Terahertz sources and detectors based on nonlinear diodes","authors":"T. Crowe","doi":"10.1109/ISDRS.2003.1272113","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272113","url":null,"abstract":"The terahertz frequency band, spanning from roughly 100 GHz to 10 THz, is the most scientifically rich, unexplored region of electromagnetic spectrum. This frequency band is useful for scientific, military and commercial applications as the microwave and far-infrared bands. The aim of this paper is to build sources and detectors that span the entire terahertz technology gap. This has primarily been achieved through the use of nonlinear diodes to extend microwave functionality to high frequencies. GaAs is the material of choice for the nonlinear diodes because of its high electron mobility. Here the voltages, currents and their effect on the electrons in the microwave frequency devices are also considered.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131750294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272139
R. Singh, A. Hefner, T. R. McNutt
This paper attempts to show some of the reliability issues faced by contemporary SiC power devices. Material defects in SiC are the cause of many reliability issues in the SiC devices, such as (a) reduced critical electric field in devices, (b) higher leakage currents during reverse bias operation and (c) degradation in the on-state performance of bipolar devices. Detailed experiments conducted on SiC devices have shown that the on-state voltage drop on these devices increases with time when they are kept in the forward biased mode for appreciable length of time.
{"title":"Reliability concerns in contemporary SiC power devices","authors":"R. Singh, A. Hefner, T. R. McNutt","doi":"10.1109/ISDRS.2003.1272139","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272139","url":null,"abstract":"This paper attempts to show some of the reliability issues faced by contemporary SiC power devices. Material defects in SiC are the cause of many reliability issues in the SiC devices, such as (a) reduced critical electric field in devices, (b) higher leakage currents during reverse bias operation and (c) degradation in the on-state performance of bipolar devices. Detailed experiments conducted on SiC devices have shown that the on-state voltage drop on these devices increases with time when they are kept in the forward biased mode for appreciable length of time.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121768372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272111
Wei-Jean Liu, O. Chen, L. Dai, P. Weng, F. Jih
In this paper the method to deposit an epitaxial layer on the substrate of silicon-based image sensor to overcome the higher resposivity (A/W) at the infrared region due to energy gap, 1.12eV, of the silicon is explored. The measurement results demonstrate that the CMOS photodiode without epitaxial layer have the maximum responsivity at the infrared region but the photodiode with epitaxial layer reduces the responsivity at the infrared region efficiently. The model of the CMOS photodiode is utilized to analyze the characteristics of the epitaxial layer. The simulation results of the photo-responses of the epitaxial layers are also presented.
{"title":"Exploration of the epitaxial layer affecting behaviors of CMOS photodiodes","authors":"Wei-Jean Liu, O. Chen, L. Dai, P. Weng, F. Jih","doi":"10.1109/ISDRS.2003.1272111","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272111","url":null,"abstract":"In this paper the method to deposit an epitaxial layer on the substrate of silicon-based image sensor to overcome the higher resposivity (A/W) at the infrared region due to energy gap, 1.12eV, of the silicon is explored. The measurement results demonstrate that the CMOS photodiode without epitaxial layer have the maximum responsivity at the infrared region but the photodiode with epitaxial layer reduces the responsivity at the infrared region efficiently. The model of the CMOS photodiode is utilized to analyze the characteristics of the epitaxial layer. The simulation results of the photo-responses of the epitaxial layers are also presented.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127800928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272047
L. Ai, M. Cheng
In this paper, we derive an analytical expression for the total delay time /spl tau//sub tot/ in Si/sub 1-x/Ge/sub x/HBTs and based on the expression, the influences of the Ge composition profile X/sub Ge/(y) in the base on total delay time /spl tau//sub tot/ is examined for optimization of cutoff frequency f/sub T/. Total delay times are varied by varying doping profiles and Ge composition. Trapezoid-like base Ge composition profile and total delay time for the Si/sub 1-x/Ge/sub x/ HBT were studied.
{"title":"Optimization of the cutoff frequency for Si/sub 1-x/Ge/sub x/ HBTs","authors":"L. Ai, M. Cheng","doi":"10.1109/ISDRS.2003.1272047","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272047","url":null,"abstract":"In this paper, we derive an analytical expression for the total delay time /spl tau//sub tot/ in Si/sub 1-x/Ge/sub x/HBTs and based on the expression, the influences of the Ge composition profile X/sub Ge/(y) in the base on total delay time /spl tau//sub tot/ is examined for optimization of cutoff frequency f/sub T/. Total delay times are varied by varying doping profiles and Ge composition. Trapezoid-like base Ge composition profile and total delay time for the Si/sub 1-x/Ge/sub x/ HBT were studied.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133358859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272024
Shuntao Hu, K. Sheng
In this paper, a new technique utilizing dielectric mesa is proposed for SiC power devices to address the existing termination challenges associated with oxide breakdown and implantation induced reverse leakage.
{"title":"A new edge termination technique for SiC power devices","authors":"Shuntao Hu, K. Sheng","doi":"10.1109/ISDRS.2003.1272024","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272024","url":null,"abstract":"In this paper, a new technique utilizing dielectric mesa is proposed for SiC power devices to address the existing termination challenges associated with oxide breakdown and implantation induced reverse leakage.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"11 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113990139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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