Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272053
R. Webster, A. Anwar
In this paper, we presents the first measurement of minimum noise figure in AlGaAsSb/InGaAs/AlGaAsSb metamorphic quantum well HEMTs (MHEMTs). MHEMTs allow the development of InGaAs-based HEMTs on inexpensive GaAs substrates in contrast to the rather expensive InP-substrates. A measured low noise figure, F/sub min/ is a function of frequency at different gate biases. This provides an attractive alternative technology for the realization of low noise millimeter wave devices.
{"title":"Noise in metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs","authors":"R. Webster, A. Anwar","doi":"10.1109/ISDRS.2003.1272053","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272053","url":null,"abstract":"In this paper, we presents the first measurement of minimum noise figure in AlGaAsSb/InGaAs/AlGaAsSb metamorphic quantum well HEMTs (MHEMTs). MHEMTs allow the development of InGaAs-based HEMTs on inexpensive GaAs substrates in contrast to the rather expensive InP-substrates. A measured low noise figure, F/sub min/ is a function of frequency at different gate biases. This provides an attractive alternative technology for the realization of low noise millimeter wave devices.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131310665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272057
W. Kruppa, J. B. Boos, B. R. Bennett, B. Tinkham
Measurements of the low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illumination are reported in this paper. The primary focus in this paper is on devices in which a digital alloy superlattice of InAs/InSb was used to form an InAsSb channel. This appears to be related to the lower stress in this channel, which is matched to AlSb.
{"title":"Low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illumination","authors":"W. Kruppa, J. B. Boos, B. R. Bennett, B. Tinkham","doi":"10.1109/ISDRS.2003.1272057","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272057","url":null,"abstract":"Measurements of the low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illumination are reported in this paper. The primary focus in this paper is on devices in which a digital alloy superlattice of InAs/InSb was used to form an InAsSb channel. This appears to be related to the lower stress in this channel, which is matched to AlSb.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131507280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272020
Jaesun Lee, Dongmin Liu, Wu Lu
A method to enhance the breakdown voltage performance of AlGaN/GaN HEMTs using post-annealing technique is reported in this paper. The transistors were annealed at 900 /spl deg/C for 30 seconds in a rapid thermal annealing system. After metallization, devices were annealed at 700 /spl deg/C in a furnace to improve breakdown voltages. The typical drain current-voltage characteristics of HEMTdevice with 0.3 /spl mu/m gate length and 100 /spl mu/m gate width is studied by experimental results.
{"title":"Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors using annealing technique","authors":"Jaesun Lee, Dongmin Liu, Wu Lu","doi":"10.1109/ISDRS.2003.1272020","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272020","url":null,"abstract":"A method to enhance the breakdown voltage performance of AlGaN/GaN HEMTs using post-annealing technique is reported in this paper. The transistors were annealed at 900 /spl deg/C for 30 seconds in a rapid thermal annealing system. After metallization, devices were annealed at 700 /spl deg/C in a furnace to improve breakdown voltages. The typical drain current-voltage characteristics of HEMTdevice with 0.3 /spl mu/m gate length and 100 /spl mu/m gate width is studied by experimental results.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132767100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272127
Yingda Dong, Yun Wei, Z. Griffith, M. Urteaga, M. Dahlstrom, M. Rodwell
In a mesa structured HBT, a large portion of C/sub bc/originates from the extrinsic base-collector region under the base contact. To reduce extrinsic C/sub bc/, an HBT structure with a selectively implanted collector pedestal and MBE growth, under the HBT intrinsic region is reported. The fabrication steps of the device are implant window and Si ion implant, implant mask removal and HT annealing, HBT structure regrowth and triple-mesa HBT fabrication. The results exhibit low I/sub cbo/ and hence high junction quality can be obtained in a collector pedestal process incorporating regrowth.
{"title":"InP heterojunction bipolar transistor with a selectively implanted collector pedestal","authors":"Yingda Dong, Yun Wei, Z. Griffith, M. Urteaga, M. Dahlstrom, M. Rodwell","doi":"10.1109/ISDRS.2003.1272127","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272127","url":null,"abstract":"In a mesa structured HBT, a large portion of C/sub bc/originates from the extrinsic base-collector region under the base contact. To reduce extrinsic C/sub bc/, an HBT structure with a selectively implanted collector pedestal and MBE growth, under the HBT intrinsic region is reported. The fabrication steps of the device are implant window and Si ion implant, implant mask removal and HT annealing, HBT structure regrowth and triple-mesa HBT fabrication. The results exhibit low I/sub cbo/ and hence high junction quality can be obtained in a collector pedestal process incorporating regrowth.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122300163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1271983
E. Sargent
We review light production from quantum dot nanocrystals embedded in a semiconducting polymer. Integrable optoelectronics is facilitated in this processible material system - one which may conveniently be combined with silicon electronics, passive optics, and RF platforms. Synthetic conditions determine nanocrystal diameter and thereby tune, through the quantum size effect, the spectrum of optical emissions from the quantum dots. We show that it is possible to span across and beyond the 1.3-1.6 /spl mu/m spectrum of optical communications. Nonradiative recombination from the nanocrystals' surface is addressed by choosing stabilizing, passivating organic ligands which nevertheless permit energy transfer from polymer to nanocrystals.
{"title":"Telecom-wavelength electroluminescence from processible quantum dot nanocrystals","authors":"E. Sargent","doi":"10.1109/ISDRS.2003.1271983","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1271983","url":null,"abstract":"We review light production from quantum dot nanocrystals embedded in a semiconducting polymer. Integrable optoelectronics is facilitated in this processible material system - one which may conveniently be combined with silicon electronics, passive optics, and RF platforms. Synthetic conditions determine nanocrystal diameter and thereby tune, through the quantum size effect, the spectrum of optical emissions from the quantum dots. We show that it is possible to span across and beyond the 1.3-1.6 /spl mu/m spectrum of optical communications. Nonradiative recombination from the nanocrystals' surface is addressed by choosing stabilizing, passivating organic ligands which nevertheless permit energy transfer from polymer to nanocrystals.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121276667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272131
J. Colinge
This paper deals with evolution of silicon-on-insulator MOSFET. In 1964 partially depleted devices fabricated on silicon-on-sapphire substrates was developed and was successfully used in numerous military and civilian applications and still used to realize commercial HF circuits in fully depleted CMOS. The first fully depleted SOI MOSFET was established in early 1980 with superior transconductance, current drive and subthreshold swing. Double-gate SOI MOSFET was established in 1984 with resemblance of the XMOS structure and good short-channel characteristics. Later vertical-channel MOSFET, triangular-wire SOI MOSFET and /spl Delta/-channel MOSFET was established. Practical implementation of planar double-gate MOSFET was observed in 1990. The evolution of SOI MOSFET seems ineluctable as high drive with short-channel immunity becomes a problem and can no longer be solved by classical approach.
{"title":"The evolution of silicon-on-insulator MOSFETs","authors":"J. Colinge","doi":"10.1109/ISDRS.2003.1272131","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272131","url":null,"abstract":"This paper deals with evolution of silicon-on-insulator MOSFET. In 1964 partially depleted devices fabricated on silicon-on-sapphire substrates was developed and was successfully used in numerous military and civilian applications and still used to realize commercial HF circuits in fully depleted CMOS. The first fully depleted SOI MOSFET was established in early 1980 with superior transconductance, current drive and subthreshold swing. Double-gate SOI MOSFET was established in 1984 with resemblance of the XMOS structure and good short-channel characteristics. Later vertical-channel MOSFET, triangular-wire SOI MOSFET and /spl Delta/-channel MOSFET was established. Practical implementation of planar double-gate MOSFET was observed in 1990. The evolution of SOI MOSFET seems ineluctable as high drive with short-channel immunity becomes a problem and can no longer be solved by classical approach.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"136-137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117144080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272160
J. Seminario, Roy A. Araujo, Liuming Yan, Yu Ma
Negative differential resistance (NDR) is a characteristics typical of atomistic systems most likely observed in small organic molecules having electronegative groups, which allow trapping electrons and thus changing the electrical characteristics of the molecule. Here we report high level calculations on small wires of gold atoms that shows the existence of NDR. The analysis of molecular electronic devices using ab initio based methods is presented.
{"title":"The analysis, design, and simulation of molecular electronic devices using ab initio based methods: the negative differential resistance","authors":"J. Seminario, Roy A. Araujo, Liuming Yan, Yu Ma","doi":"10.1109/ISDRS.2003.1272160","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272160","url":null,"abstract":"Negative differential resistance (NDR) is a characteristics typical of atomistic systems most likely observed in small organic molecules having electronegative groups, which allow trapping electrons and thus changing the electrical characteristics of the molecule. Here we report high level calculations on small wires of gold atoms that shows the existence of NDR. The analysis of molecular electronic devices using ab initio based methods is presented.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116407585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272065
D. Prentice, K. Roenker
The operation and performance of the organic, pentacene-based MOSFETs has been studied using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator. Organic semiconductors have been proposed as a replacement for amorphous or polycrystalline-based silicon devices for low cost applications such as RF tags and display drivers. While extensive experimental development of these devices has proceeded, their study using device modeling has received comparatively little attention. In this work, the results of device modeling using a commercial simulator will be compared with the experimental reports for pentacene-based, p-channel MOSFETs for both bottom and top contact geometries. The results demonstrate that commercial simulators can be used to model these devices in spite of the nontraditional nature of the hole transport in organic semiconductors.
{"title":"Numerical modeling study of organic pentacene-based MOSFETs","authors":"D. Prentice, K. Roenker","doi":"10.1109/ISDRS.2003.1272065","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272065","url":null,"abstract":"The operation and performance of the organic, pentacene-based MOSFETs has been studied using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator. Organic semiconductors have been proposed as a replacement for amorphous or polycrystalline-based silicon devices for low cost applications such as RF tags and display drivers. While extensive experimental development of these devices has proceeded, their study using device modeling has received comparatively little attention. In this work, the results of device modeling using a commercial simulator will be compared with the experimental reports for pentacene-based, p-channel MOSFETs for both bottom and top contact geometries. The results demonstrate that commercial simulators can be used to model these devices in spite of the nontraditional nature of the hole transport in organic semiconductors.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116115364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272064
T. Rakshit, G. Liang, Avik W. Ghosh, S. Datta
This paper demonstrates the negative differential resistance in silicon-molecule heterostructure. The NDR is expected to occur in the positive bias direction for molecules on degenerately doped p-type silicon substrates and in the negative bias direction for degenerately doped n-type substrates.
{"title":"Negative differential resistance in silicon-molecule heterostructure","authors":"T. Rakshit, G. Liang, Avik W. Ghosh, S. Datta","doi":"10.1109/ISDRS.2003.1272064","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272064","url":null,"abstract":"This paper demonstrates the negative differential resistance in silicon-molecule heterostructure. The NDR is expected to occur in the positive bias direction for molecules on degenerately doped p-type silicon substrates and in the negative bias direction for degenerately doped n-type substrates.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116249021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1271989
W. Haensch
Fabrication of sub-100 nm strained Si/SiGe MOSFETs using CMOS technology have been demonstrated, with current drives enhancements in both NFET and PFET. Material properties of strained Si and SiGe require careful modifications in CMOS process flow. Band offset induced shift in threshold voltages need to be compensated by device design and the difference in dopant diffusion properties also need to be taken into account. SGOI substrates can be fabricated by SIMOX, thermal diffusion of Ge and layer transfer techniques.
{"title":"Strained Si/SiGe technology: status and opportunities","authors":"W. Haensch","doi":"10.1109/ISDRS.2003.1271989","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1271989","url":null,"abstract":"Fabrication of sub-100 nm strained Si/SiGe MOSFETs using CMOS technology have been demonstrated, with current drives enhancements in both NFET and PFET. Material properties of strained Si and SiGe require careful modifications in CMOS process flow. Band offset induced shift in threshold voltages need to be compensated by device design and the difference in dopant diffusion properties also need to be taken into account. SGOI substrates can be fabricated by SIMOX, thermal diffusion of Ge and layer transfer techniques.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114834148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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