Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367790
T. Palacios, S. Rajan, L. Shen, A. Chakraborty, S. Heikman, S. Keller, S. Denbaars, U. Mishra
After demonstrating impressive performance in the X-band frequencies, one of the next goals for GaN-based power transistors is to increase the frequency of operation to the mm-wave range. Monte Carlo simulations predict that the saturation electron velocity in AlGaN/GaN high electron mobility transistors (HEMTs) should be around 2.5/spl times/10/sup 7/ cm/s (M. Singh and J. Singh, J. Appl. Phys. vol. 94, p. 2498, 2003). The study of f/sub T/ vs I/sub DS/ from pinch-off to saturation is a very useful tool to understand the maximum frequency performance of mm-wave HEMTs. In this work, we have studied the effect of parasitic resistances in the shape of the f/sub T/ vs I/sub DS/ curve. R/sub s/ increases with the current density in the channel. The extraction of the effect of the differential access resistance out of f/sub T/ greatly changes the shape of the curve. The access resistances play an important role in the rf behavior of AlGaN/GaN transistors. Not only the absolute values, but also their increase with current must be controlled in order to get the maximum performance out of the GaN-based HEMTs.
在x波段展示了令人印象深刻的性能之后，gan基功率晶体管的下一个目标之一是将工作频率提高到毫米波范围。Monte Carlo模拟预测AlGaN/GaN高电子迁移率晶体管(HEMTs)的饱和电子速度应该在2.5/spl倍/10/sup / 7/ cm/s左右(M. Singh和J. Singh, J. appll .)。理论物理。第94卷，第2498页，2003)。研究f/sub T/ vs I/sub DS/从掐灭到饱和是了解毫米波hemt最大频率性能的一个非常有用的工具。在这项工作中，我们研究了寄生电阻在f/sub T/ vs I/sub DS/曲线中的影响。R/sub /s /随通道内电流密度的增大而增大。提取出f/sub T/的差分接入电阻的影响，极大地改变了曲线的形状。接入电阻对AlGaN/GaN晶体管的射频性能有重要影响。为了使gan基hemt的性能最大化，不仅要控制其绝对值，而且要控制其随电流的增加。
{"title":"Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTs","authors":"T. Palacios, S. Rajan, L. Shen, A. Chakraborty, S. Heikman, S. Keller, S. Denbaars, U. Mishra","doi":"10.1109/DRC.2004.1367790","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367790","url":null,"abstract":"After demonstrating impressive performance in the X-band frequencies, one of the next goals for GaN-based power transistors is to increase the frequency of operation to the mm-wave range. Monte Carlo simulations predict that the saturation electron velocity in AlGaN/GaN high electron mobility transistors (HEMTs) should be around 2.5/spl times/10/sup 7/ cm/s (M. Singh and J. Singh, J. Appl. Phys. vol. 94, p. 2498, 2003). The study of f/sub T/ vs I/sub DS/ from pinch-off to saturation is a very useful tool to understand the maximum frequency performance of mm-wave HEMTs. In this work, we have studied the effect of parasitic resistances in the shape of the f/sub T/ vs I/sub DS/ curve. R/sub s/ increases with the current density in the channel. The extraction of the effect of the differential access resistance out of f/sub T/ greatly changes the shape of the curve. The access resistances play an important role in the rf behavior of AlGaN/GaN transistors. Not only the absolute values, but also their increase with current must be controlled in order to get the maximum performance out of the GaN-based HEMTs.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"269 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121814624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367789
A. Imre, G. Csaba, Ling Zhou, A. Orlov, G. Bernstein, W. Porod, V. Metlushko
Magnetic logic devices are, in principle, capable of transmitting and processing binary information in an entirely magnetic way. Magnetic quantum-dot cellular automata (MQCA) (R.P. Cowburn and M.E. Welland, Science vol. 287, p. 1466, 2000; G. Csaba et al., IEEE Trans on Nanotechnology vol. 1, p. 209, 2002) realize logic functionality based on arrays of dipole-coupled nanomagnets. Recent experimental studies investigated the correlation length of antiferromagnetic ordering on chains of coupled single-domain ferromagnets (R.P. Cowburn, Phys. Rev. B vol. 65, p. 092409, 2002; A. Imre et al., Proc. IEEE-NANO 2003). Switching-field variations of the nanomagnets was identified as a critical issue during the ordering process. We present a combined experimental and theoretical study on arrays of closely-spaced magnetic dots with varying shapes in the size of 70-300 nm. The goal of our study is to identify those shapes which yield the longest correlation lengths for MQCA applications.
磁性逻辑器件在原理上能够完全以磁性方式传输和处理二进制信息。磁量子点元胞自动机(MQCA) (R.P. Cowburn和M.E. Welland, Science vol. 287, p. 1466, 2000;G. Csaba et al.， IEEE Trans on Nanotechnology vol. 1, p. 209, 2002)实现基于偶极子耦合纳米磁体阵列的逻辑功能。最近的实验研究了偶联单畴铁磁体链上反铁磁有序的相关长度(R.P. Cowburn, Phys.)。Rev. B卷65,p. 092409, 2002;A. Imre et al.， Proc. IEEE-NANO 2003)。在排序过程中，纳米磁体的开关场变化是一个关键问题。我们提出了一个结合实验和理论研究的紧密间隔的磁点阵列具有不同的形状，尺寸在70-300纳米。我们研究的目标是确定那些为MQCA应用程序产生最长相关长度的形状。
{"title":"Shape engineering of dipole-coupled nanomagnets for magnetic logic devices","authors":"A. Imre, G. Csaba, Ling Zhou, A. Orlov, G. Bernstein, W. Porod, V. Metlushko","doi":"10.1109/DRC.2004.1367789","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367789","url":null,"abstract":"Magnetic logic devices are, in principle, capable of transmitting and processing binary information in an entirely magnetic way. Magnetic quantum-dot cellular automata (MQCA) (R.P. Cowburn and M.E. Welland, Science vol. 287, p. 1466, 2000; G. Csaba et al., IEEE Trans on Nanotechnology vol. 1, p. 209, 2002) realize logic functionality based on arrays of dipole-coupled nanomagnets. Recent experimental studies investigated the correlation length of antiferromagnetic ordering on chains of coupled single-domain ferromagnets (R.P. Cowburn, Phys. Rev. B vol. 65, p. 092409, 2002; A. Imre et al., Proc. IEEE-NANO 2003). Switching-field variations of the nanomagnets was identified as a critical issue during the ordering process. We present a combined experimental and theoretical study on arrays of closely-spaced magnetic dots with varying shapes in the size of 70-300 nm. The goal of our study is to identify those shapes which yield the longest correlation lengths for MQCA applications.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126850191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367773
L. Shen, D. Buttari, S. Heikman, A. Chini, R. Coffie, L. McCarthy, A. Chakraborty, S. Keller, S. Denbaars, U. Mishra
A record high power density on sapphire without passivation was achieved using an epitaxial approach to dispersion reduction. SiN passivation has been employed to reduce DC-to-RF dispersion of GaN-based HEMTs, but is sensitive to surface and deposition conditions. A proposed epitaxial solution is to grow a thick GaN cap on top of the conventional HEMT to increase the distance between surface and channel, reducing the effect of surface potential fluctuations on device performance. Initial results from a gate-recessed device structure showed that dispersion was reduced greatly without surface passivation. Nevertheless, high gate leakage and low breakdown limited the output power. We investigate the cause of these leakage and breakdown issues, propose solutions, and discuss the results. As a consequence, 8.5 W/mm with a PAE of 57% was achieved at 50 V at 4 GHz from unpassivated HEMTs on sapphire, the highest power density reported.
{"title":"Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivation","authors":"L. Shen, D. Buttari, S. Heikman, A. Chini, R. Coffie, L. McCarthy, A. Chakraborty, S. Keller, S. Denbaars, U. Mishra","doi":"10.1109/DRC.2004.1367773","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367773","url":null,"abstract":"A record high power density on sapphire without passivation was achieved using an epitaxial approach to dispersion reduction. SiN passivation has been employed to reduce DC-to-RF dispersion of GaN-based HEMTs, but is sensitive to surface and deposition conditions. A proposed epitaxial solution is to grow a thick GaN cap on top of the conventional HEMT to increase the distance between surface and channel, reducing the effect of surface potential fluctuations on device performance. Initial results from a gate-recessed device structure showed that dispersion was reduced greatly without surface passivation. Nevertheless, high gate leakage and low breakdown limited the output power. We investigate the cause of these leakage and breakdown issues, propose solutions, and discuss the results. As a consequence, 8.5 W/mm with a PAE of 57% was achieved at 50 V at 4 GHz from unpassivated HEMTs on sapphire, the highest power density reported.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116028894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367886
M. Urteaga, P. Rowell, R. Pierson, B. Brar, M. Dahlstrom, Z. Griffith, M. Rodwell, S. Lee, N. Nguyen, C. Nguyen-Global
We report the development of a wide bandwidth InP double heterojunction bipolar transistor technology that utilizes novel electroplating processes to form the emitter and base contacts. The technology enables the fabrication of HBTs with deep submicron emitter-base junction dimensions and self-aligned base ohmic contacts. Using this technology, HBTs have been fabricated with emitter junction widths scaled to 0.25 /spl mu/m. These devices demonstrated peak f/sub /spl tau// and f/sub max/, values of over 300 GHz. The transistors also support high current density operation (J/sub E/>7 mA//spl mu/m/sup 2/) and have a low collector-base capacitance to collector current ratio (C/sub cb//I/sub c//spl sim/0.55 ps/V), an important parameter for digital logic speed.
{"title":"Deep submicron InP DHBT technology with electroplated emitter and base contacts","authors":"M. Urteaga, P. Rowell, R. Pierson, B. Brar, M. Dahlstrom, Z. Griffith, M. Rodwell, S. Lee, N. Nguyen, C. Nguyen-Global","doi":"10.1109/DRC.2004.1367886","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367886","url":null,"abstract":"We report the development of a wide bandwidth InP double heterojunction bipolar transistor technology that utilizes novel electroplating processes to form the emitter and base contacts. The technology enables the fabrication of HBTs with deep submicron emitter-base junction dimensions and self-aligned base ohmic contacts. Using this technology, HBTs have been fabricated with emitter junction widths scaled to 0.25 /spl mu/m. These devices demonstrated peak f/sub /spl tau// and f/sub max/, values of over 300 GHz. The transistors also support high current density operation (J/sub E/>7 mA//spl mu/m/sup 2/) and have a low collector-base capacitance to collector current ratio (C/sub cb//I/sub c//spl sim/0.55 ps/V), an important parameter for digital logic speed.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116482843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367823
Tongsheng Xia, L. Register, S. Banerjee
Full complex band structure-based NEGF simulation results of the subthreshold leakage characteristics of nano-scale carbon nanotube field-effect transistors (CNTFETs) are provided. These results show qualitatively unconventional subthreshold behavior, which needs to be considered for the scaling of CNTFETs. To fully understand the subthreshold current of nanoscale channel length CNTFETs, tunneling-mediated leakage currents must be considered. And for narrow-gap CNTs, the proximity of the electron tunneling path to the valence band as well as the conduction band should be considered; that is, a simple effective mass approximation is not reliable. In this work, we address the transport behavior of a nanoscale CNTFET with zigzag nanotubes, using the NEGF method with a full-band tight-binding model, including the complex bandstructure effect by the bandgap states of CNTs.
{"title":"Complex band structure-based non-equilibrium Green's function (NEGF) transport studies for ultra-scaled carbon nanotube (CNT) transistors [CNTFETs]","authors":"Tongsheng Xia, L. Register, S. Banerjee","doi":"10.1109/DRC.2004.1367823","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367823","url":null,"abstract":"Full complex band structure-based NEGF simulation results of the subthreshold leakage characteristics of nano-scale carbon nanotube field-effect transistors (CNTFETs) are provided. These results show qualitatively unconventional subthreshold behavior, which needs to be considered for the scaling of CNTFETs. To fully understand the subthreshold current of nanoscale channel length CNTFETs, tunneling-mediated leakage currents must be considered. And for narrow-gap CNTs, the proximity of the electron tunneling path to the valence band as well as the conduction band should be considered; that is, a simple effective mass approximation is not reliable. In this work, we address the transport behavior of a nanoscale CNTFET with zigzag nanotubes, using the NEGF method with a full-band tight-binding model, including the complex bandstructure effect by the bandgap states of CNTs.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"287 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114192460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367781
D. Tsuya, M. Suzuki, Y. Aoyagi, K. Ishibashi
Single-electron devices (SEDs) based on Coulomb blockade (CB) effects have prominent features in terms of ultra-low power consumption and miniaturization to a molecular scale. The performance of the device gets better as the dot size gets small because they rely on the classical CB effect. The single-wall carbon nanotube (SWNT) is attractive material as a building block of SEDs because of the extremely small diameter of a few nanometers. In this paper, we report on the fabrication of the complimentary single-electron inverter an elemental device for the single electron logic (J.R. Tucker, J. Appl. Phys. vol. 72, p. 4399, 1992), and show the electrical performance in the temperature range from 1.5 K to 10 K.
基于库仑阻断效应的单电子器件(SEDs)具有超低功耗和分子小型化的突出特点。由于依赖于经典的CB效应，器件的性能随着点尺寸的减小而提高。单壁碳纳米管(SWNT)由于其直径极小，只有几纳米，是一种极具吸引力的材料。在本文中，我们报道了互补单电子逆变器的制造，这是一种用于单电子逻辑的基本器件。理论物理。vol. 72, p. 4399, 1992)，并显示在1.5 K至10 K的温度范围内的电气性能。
{"title":"Fabrication of complimentary single-electron inverter in single-wall carbon nanotubes","authors":"D. Tsuya, M. Suzuki, Y. Aoyagi, K. Ishibashi","doi":"10.1109/DRC.2004.1367781","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367781","url":null,"abstract":"Single-electron devices (SEDs) based on Coulomb blockade (CB) effects have prominent features in terms of ultra-low power consumption and miniaturization to a molecular scale. The performance of the device gets better as the dot size gets small because they rely on the classical CB effect. The single-wall carbon nanotube (SWNT) is attractive material as a building block of SEDs because of the extremely small diameter of a few nanometers. In this paper, we report on the fabrication of the complimentary single-electron inverter an elemental device for the single electron logic (J.R. Tucker, J. Appl. Phys. vol. 72, p. 4399, 1992), and show the electrical performance in the temperature range from 1.5 K to 10 K.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130786145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367878
P. Baude, D. A. Ender, T. Kelley, M. Haase, D. Muyres, S. Theiss
In this paper, we present a pentacene-based eight-bit radio frequency identification (RFID) transponder circuit. The circuits are patterned entirely with polymeric shadow masks and operate at carrier frequencies greater than 1 MHz. The thin film integrated circuits were fabricated using methods previously described (P.F. Baude et al., Appl. Phys. Lett., vol.82, p.3964, 2003). In the work reported here, we use an ac powering approach to power the logic and amplitude modulation circuitry. A description of the RFID circuit is given, along with details of the reader.
在本文中，我们提出了一个基于五苯的八位射频识别(RFID)应答器电路。电路完全采用聚合物阴影掩模，并在大于1mhz的载波频率下工作。薄膜集成电路是用先前描述的方法制造的(P.F. Baude et al.，苹果公司)。理论物理。列托人。， vol.82, p.3964, 2003)。在这里报告的工作中，我们使用交流供电方法为逻辑和调幅电路供电。给出了RFID电路的描述，以及阅读器的细节。
{"title":"Pentacene based RFID transponder circuitry","authors":"P. Baude, D. A. Ender, T. Kelley, M. Haase, D. Muyres, S. Theiss","doi":"10.1109/DRC.2004.1367878","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367878","url":null,"abstract":"In this paper, we present a pentacene-based eight-bit radio frequency identification (RFID) transponder circuit. The circuits are patterned entirely with polymeric shadow masks and operate at carrier frequencies greater than 1 MHz. The thin film integrated circuits were fabricated using methods previously described (P.F. Baude et al., Appl. Phys. Lett., vol.82, p.3964, 2003). In the work reported here, we use an ac powering approach to power the logic and amplitude modulation circuitry. A description of the RFID circuit is given, along with details of the reader.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122227150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367808
K. Ikeda, Y. Yamashita, Akira Endoh, K. Hikosaka, Takashi Mimura
The Schottky source/drain MOSFET (SSD-MOSFET) is an attractive design for ballistic MOSFETs because it has the potential to allow high-energy carrier injection from a metal source to an intrinsic channel (J.R. Tucker et al, Appl. Phys. Lett., vol. 65, p. 618, 1994; J. Kedzierski et al, IEDM Tech. Dig., p. 57, 2000). However, achieving high-drive current is difficult because of the relatively high potential barrier (Schottky barrier) at the source. To overcome this problem, we have proposed the Schottky-barrier-height (SBH) engineering through semiconductor bandgap modulation (K. Ikeda et al, 60th DRC late news paper; K. Ikeda et al, IEEE Electron Device Lett., vol. 23, p. 670, 2002). For effective SBH engineering with high controllability, stress control to control the bandgap is key issue. However, we know of no published reports on strain distributions in a strained-Si channel or at silicide/strained-Si interfaces. In this paper, we demonstrate strain-distribution analysis using STEM micrographs of a strained-Si channel SSD-MOSFET combined with fast-Fourier transform mapping (FFTM) (T. Ide et al, Jpn, J. Appl. Phys., vol. 37, p. L1546, 1998).
肖特基源/漏极MOSFET (SSD-MOSFET)是弹道MOSFET的一种有吸引力的设计，因为它有可能允许从金属源向本禀通道注入高能载流子(J.R. Tucker等人，苹果公司)。理论物理。列托人。，第65卷，第618页，1994;J. Kedzierski等，IEDM Tech. Dig。，第57页，2000年)。然而，由于在源处具有较高的势垒(肖特基势垒)，实现高驱动电流是困难的。为了克服这个问题，我们提出了通过半导体带隙调制的肖特基势垒高度(SBH)工程(K. Ikeda et al, 60 DRC后期新闻论文;K. Ikeda等人，IEEE电子器件学报。，第23卷，第670页，2002)。为了实现有效的高可控性的单轨结构工程，控制带隙的应力控制是关键问题。然而，我们知道没有关于应变si通道或硅化物/应变si界面应变分布的公开报道。在本文中，我们展示了应变si通道SSD-MOSFET结合快速傅里叶变换映射(FFTM)的STEM显微图的应变分布分析(T. Ide等，Jpn, J. appll。理论物理。，第37卷，第1546页，1998年)。
{"title":"Schottky-barrier-height engineering for strained-Si MOSFETs","authors":"K. Ikeda, Y. Yamashita, Akira Endoh, K. Hikosaka, Takashi Mimura","doi":"10.1109/DRC.2004.1367808","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367808","url":null,"abstract":"The Schottky source/drain MOSFET (SSD-MOSFET) is an attractive design for ballistic MOSFETs because it has the potential to allow high-energy carrier injection from a metal source to an intrinsic channel (J.R. Tucker et al, Appl. Phys. Lett., vol. 65, p. 618, 1994; J. Kedzierski et al, IEDM Tech. Dig., p. 57, 2000). However, achieving high-drive current is difficult because of the relatively high potential barrier (Schottky barrier) at the source. To overcome this problem, we have proposed the Schottky-barrier-height (SBH) engineering through semiconductor bandgap modulation (K. Ikeda et al, 60th DRC late news paper; K. Ikeda et al, IEEE Electron Device Lett., vol. 23, p. 670, 2002). For effective SBH engineering with high controllability, stress control to control the bandgap is key issue. However, we know of no published reports on strain distributions in a strained-Si channel or at silicide/strained-Si interfaces. In this paper, we demonstrate strain-distribution analysis using STEM micrographs of a strained-Si channel SSD-MOSFET combined with fast-Fourier transform mapping (FFTM) (T. Ide et al, Jpn, J. Appl. Phys., vol. 37, p. L1546, 1998).","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124235604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367812
S. Lee, E. Yoon, Sung-min Kim, C. Oh, Ming Li, Dong-Won Kim, I. Chung, Donggun Park, Kinam Kim
In this paper, we demonstrate a novel single-bridge-channel MOSFET (SBCFET) and MBCFET, on a bulk Si-substrate, for the sub-90 nm generation, by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and a damascene gate process. The double-gate structure of the MBCFET with thin body suppresses the short channel effects effectively without any halo implantation, providing a drive current that exceeds the required value of the ITRS roadmap. The MBCFET is one of the most promising candidates for high performance applications with high scalability.
{"title":"Three-dimensional multi-bridge-channel MOSFET (MBCFET) fabricated on bulk Si-substrate","authors":"S. Lee, E. Yoon, Sung-min Kim, C. Oh, Ming Li, Dong-Won Kim, I. Chung, Donggun Park, Kinam Kim","doi":"10.1109/DRC.2004.1367812","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367812","url":null,"abstract":"In this paper, we demonstrate a novel single-bridge-channel MOSFET (SBCFET) and MBCFET, on a bulk Si-substrate, for the sub-90 nm generation, by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and a damascene gate process. The double-gate structure of the MBCFET with thin body suppresses the short channel effects effectively without any halo implantation, providing a drive current that exceeds the required value of the ITRS roadmap. The MBCFET is one of the most promising candidates for high performance applications with high scalability.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116060865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367793
X. Su, A. Stiff-Roberts, S. Chakrabarti, J. Singh, P. Bhattacharya
In this paper, we present a novel approach to reduce dark current in quantum dot infrared photodetectors that uses resonant tunneling barriers to selectively block dark current while transmitting photocurrent. In such a device, carriers in the quantum dots (QD) are resonantly excited by an IR photon and they tunnel through a double AlGaAs barrier to be collected as photocurrent. This double barrier, which acts as a resonant tunneling filter, is located between adjacent QD layers. When the double AlGaAs barrier thickness and position are properly designed, the electron tunneling probability is /spl sim/1 at a particular energy, corresponding to the desired peak detection wavelength. At the same time, the tunneling probability is several orders of magnitude lower for energies that are tens of meV removed from the peak energy. Thus, the dark current which results from electrons with a broad energy distribution, will be significantly reduced by the resonant tunneling filter.
{"title":"Resonant tunneling quantum dot infrared photodetector (RT-QDIP): separating dark current and photocurrent","authors":"X. Su, A. Stiff-Roberts, S. Chakrabarti, J. Singh, P. Bhattacharya","doi":"10.1109/DRC.2004.1367793","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367793","url":null,"abstract":"In this paper, we present a novel approach to reduce dark current in quantum dot infrared photodetectors that uses resonant tunneling barriers to selectively block dark current while transmitting photocurrent. In such a device, carriers in the quantum dots (QD) are resonantly excited by an IR photon and they tunnel through a double AlGaAs barrier to be collected as photocurrent. This double barrier, which acts as a resonant tunneling filter, is located between adjacent QD layers. When the double AlGaAs barrier thickness and position are properly designed, the electron tunneling probability is /spl sim/1 at a particular energy, corresponding to the desired peak detection wavelength. At the same time, the tunneling probability is several orders of magnitude lower for energies that are tens of meV removed from the peak energy. Thus, the dark current which results from electrons with a broad energy distribution, will be significantly reduced by the resonant tunneling filter.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"34 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132287061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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