Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367805
Lisong Zhou, T. Jackson
Metallic foil and semiconductor piezoresistors are frequently used as strain sensors in shape or strain monitoring applications. The sensors are typically connected in a Wheatstone bridge configuration and mounted on the surface or body to be tested. Semiconductor sensors, for example crystalline silicon, can provide good strain sensitivity with significantly reduced sensor area and also reduced bridge power compared to metal resistor bridges. a-Si:H strain sensors fabricated on glass substrates have recently been demonstrated (G. de Cesare et al, Thin Solid Films, vol. 427, p. 191, 2003). We report here the first microcrystalline-silicon (/spl mu/C-Si) strain sensors fabricated directly on flexible polyimide substrates with similar gage factor but very low power and higher yield compared to metallic strain sensor.
金属箔和半导体压敏电阻在形状或应变监测应用中经常用作应变传感器。传感器通常以惠斯通电桥结构连接，安装在待测物体的表面或本体上。半导体传感器，例如晶体硅，与金属电阻器电桥相比，可以提供良好的应变灵敏度，显著减少传感器面积，也降低了电桥功率。在玻璃基板上制造的a-Si:H应变传感器最近得到了证实(G. de Cesare等人，Thin Solid Films, vol. 427, p. 191, 2003)。我们在这里报道了第一个直接在柔性聚酰亚胺衬底上制造的微晶硅(/spl mu/C-Si)应变传感器，与金属应变传感器相比，具有相似的测量因子，但功耗非常低，产量更高。
{"title":"Polymeric substrate microcrystalline-silicon strain sensor","authors":"Lisong Zhou, T. Jackson","doi":"10.1109/DRC.2004.1367805","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367805","url":null,"abstract":"Metallic foil and semiconductor piezoresistors are frequently used as strain sensors in shape or strain monitoring applications. The sensors are typically connected in a Wheatstone bridge configuration and mounted on the surface or body to be tested. Semiconductor sensors, for example crystalline silicon, can provide good strain sensitivity with significantly reduced sensor area and also reduced bridge power compared to metal resistor bridges. a-Si:H strain sensors fabricated on glass substrates have recently been demonstrated (G. de Cesare et al, Thin Solid Films, vol. 427, p. 191, 2003). We report here the first microcrystalline-silicon (/spl mu/C-Si) strain sensors fabricated directly on flexible polyimide substrates with similar gage factor but very low power and higher yield compared to metallic strain sensor.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132402603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367899
J. Zimmerman, E. Brown, A. Gossard
Small signal detection of upper mm-wave (>100 GHz) and sub mm (up to 1 THz) radiation has become a topic of great interest. This work presents a new room-temperature zero-bias rectifier that significantly simplifies detector design, mitigates current induced flicker and burst noise, and eliminates bias circuitry and related noise, leading to an inexpensive square-law detector with noise floor /spl sim/10/sup -12/ W/Hz/sup 1/2./ Our devices are all epitaxial MBE grown rectifier diodes consisting of an ErAs semimetal film grown in-situ on Si-doped InAlGaAs on InP substrates. The small lattice mismatch (2.1 %) in this material system allows the ErAs to be grown as a dislocation-free single crystal for sufficiently thin layers over semiconductor epi-layers. The contact is thermodynamically stable, robust, and eliminates the possibility of oxide formation at the Schottky interface.
{"title":"Precision engineered semimetal-semiconductor diodes for mm-wave and THz rectifiers","authors":"J. Zimmerman, E. Brown, A. Gossard","doi":"10.1109/DRC.2004.1367899","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367899","url":null,"abstract":"Small signal detection of upper mm-wave (>100 GHz) and sub mm (up to 1 THz) radiation has become a topic of great interest. This work presents a new room-temperature zero-bias rectifier that significantly simplifies detector design, mitigates current induced flicker and burst noise, and eliminates bias circuitry and related noise, leading to an inexpensive square-law detector with noise floor /spl sim/10/sup -12/ W/Hz/sup 1/2./ Our devices are all epitaxial MBE grown rectifier diodes consisting of an ErAs semimetal film grown in-situ on Si-doped InAlGaAs on InP substrates. The small lattice mismatch (2.1 %) in this material system allows the ErAs to be grown as a dislocation-free single crystal for sufficiently thin layers over semiconductor epi-layers. The contact is thermodynamically stable, robust, and eliminates the possibility of oxide formation at the Schottky interface.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"106 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133623989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367841
H. Munckata
In the last decade, the study of physics and application of spin-related phenomena has become one of the important emerging fields born from the advanced studies of both semiconductors and magnetic materials. This presentation reviews a few examples of such activities that are taking place around the world. This is followed by the experimental results concerning the optical manipulation of magnetism in (III,Mn)V ferromagnetic semiconductors. Finally, a polarized light detector is discussed and its potential application with a spin LED. Partial magnetization reversal by the electrical injection of hole spins is also reviewed on the basis of results obtained from (Ga,Mn)As-based magnetic tunnel junctions.
{"title":"Optical manipulation of magnetism in III-V-based ferromagnetic semiconductors and its device application","authors":"H. Munckata","doi":"10.1109/DRC.2004.1367841","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367841","url":null,"abstract":"In the last decade, the study of physics and application of spin-related phenomena has become one of the important emerging fields born from the advanced studies of both semiconductors and magnetic materials. This presentation reviews a few examples of such activities that are taking place around the world. This is followed by the experimental results concerning the optical manipulation of magnetism in (III,Mn)V ferromagnetic semiconductors. Finally, a polarized light detector is discussed and its potential application with a spin LED. Partial magnetization reversal by the electrical injection of hole spins is also reviewed on the basis of results obtained from (Ga,Mn)As-based magnetic tunnel junctions.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133394045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367835
S. Bank, M. Wistey, H. Yuen, L. Goddard, J. Harris
Recently, the first room temperature, continuous wave (CW), 1.49 /spl mu/m GaAs-based lasers were demonstrated. The injection efficiency, /spl eta//sub inj/, was quite low in these devices, /spl sim/45%. Determining the origin of the low /spl eta//sub inj/ allows further improvements in device performance. The origin of the low /spl eta//sub inj/ is due to carrier leakage and nonradiative recombination. In this paper, several techniques are proposed to reduce this defect-enhanced electron leakage mechanism, including a novel asymmetric quantum well structure.
{"title":"The role and suppression of carrier leakage in 1.5 /spl mu/m GaInNAsSb/GaAs lasers","authors":"S. Bank, M. Wistey, H. Yuen, L. Goddard, J. Harris","doi":"10.1109/DRC.2004.1367835","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367835","url":null,"abstract":"Recently, the first room temperature, continuous wave (CW), 1.49 /spl mu/m GaAs-based lasers were demonstrated. The injection efficiency, /spl eta//sub inj/, was quite low in these devices, /spl sim/45%. Determining the origin of the low /spl eta//sub inj/ allows further improvements in device performance. The origin of the low /spl eta//sub inj/ is due to carrier leakage and nonradiative recombination. In this paper, several techniques are proposed to reduce this defect-enhanced electron leakage mechanism, including a novel asymmetric quantum well structure.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114680328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367782
J. A. Nichols, T. Jackson, M. Lu, M. Hack
Organic light emitting diode (OLED) displays fabricated on polymeric substrates would be lightweight, flexible, rugged, and potentially less expensive to manufacture. Several passive matrix OLED displays fabricated on polymeric substrates have been demonstrated. For high information content displays, active-matrix pixel addressing provides improved display performance and reduced power consumption. To date, all active matrix OLED displays have been fabricated on rigid substrates and most used polysilicon thin film transistors (TFTs) as the active elements because they can provide sufficient current at low voltages and acceptable device dimensions. However, improvements in the efficiency of OLEDs allows lower mobility TFTs, such as those based on hydrogenated amorphous silicon (a-Si:H) or even organic semiconductors, to be used as OLED drive devices (M.A. Baldo et al, Appl. Phys. Lett., vol. 75, pp. 4-6, 1999). The lower processing temperatures of a-Si:H and organic TFTs may permit the use of polymeric substrates. In this work, 1 mm/sup 2/ a-Si:H TFT phosphorescent OLED active matrix pixels and pixel arrays were fabricated on 50 /spl mu/m thick polyimide substrates.
{"title":"a-Si:H TFT phosphorescent OLED active matrix pixels fabricated on polymeric substrates","authors":"J. A. Nichols, T. Jackson, M. Lu, M. Hack","doi":"10.1109/DRC.2004.1367782","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367782","url":null,"abstract":"Organic light emitting diode (OLED) displays fabricated on polymeric substrates would be lightweight, flexible, rugged, and potentially less expensive to manufacture. Several passive matrix OLED displays fabricated on polymeric substrates have been demonstrated. For high information content displays, active-matrix pixel addressing provides improved display performance and reduced power consumption. To date, all active matrix OLED displays have been fabricated on rigid substrates and most used polysilicon thin film transistors (TFTs) as the active elements because they can provide sufficient current at low voltages and acceptable device dimensions. However, improvements in the efficiency of OLEDs allows lower mobility TFTs, such as those based on hydrogenated amorphous silicon (a-Si:H) or even organic semiconductors, to be used as OLED drive devices (M.A. Baldo et al, Appl. Phys. Lett., vol. 75, pp. 4-6, 1999). The lower processing temperatures of a-Si:H and organic TFTs may permit the use of polymeric substrates. In this work, 1 mm/sup 2/ a-Si:H TFT phosphorescent OLED active matrix pixels and pixel arrays were fabricated on 50 /spl mu/m thick polyimide substrates.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115773204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367810
Zhikuan Zhang, S. Zhang, Chuguang Feng, M. Chan
As MOSFET feature sizes are scaled to the deep sub-0.1 /spl mu/m regime, ultra-shallow source/drain extensions and heavily doped halos are required to suppress short-channel effects. These structures result in high series resistance and parasitic capacitance. A source/drain-on-insulator (SDOI) structure with elevated source/drain combined with an oxide isolation, formed by a shallow trench process underneath the source/drain region, is reported to be a potential solution to simultaneously reduce the series resistance and parasitic capacitance. However, the optimization of SDOI structures is very tricky and the tradeoff between series resistance and gate-to-drain Miller capacitance is not obvious. In this paper, the advantage of this MOSFET source/drain engineered structure is verified by detailed device simulation with extremely scaled MOSFETs. Device structure parameter optimizations are discussed to maximize the intrinsic performance. Design guidelines and potential performance gain with the SDOI structure are also discussed.
由于MOSFET的特征尺寸被缩放到深度低于0.1 /spl μ m /m的范围，因此需要超浅的源极/漏极扩展和高掺杂晕来抑制短通道效应。这些结构导致高串联电阻和寄生电容。据报道，绝缘体上源/漏极(SDOI)结构具有高架源/漏极和氧化物隔离，由源/漏极区域下方的浅沟槽工艺形成，是同时降低串联电阻和寄生电容的潜在解决方案。然而，SDOI结构的优化非常棘手，串联电阻和栅漏米勒电容之间的权衡并不明显。在本文中，通过对极尺度MOSFET进行详细的器件仿真，验证了该MOSFET源极/漏极工程结构的优势。讨论了器件结构参数的优化，以实现器件内在性能的最大化。本文还讨论了SDOI结构的设计准则和潜在的性能增益。
{"title":"A study of source/drain-on-insulator structure for extremely scaled MOSFETs","authors":"Zhikuan Zhang, S. Zhang, Chuguang Feng, M. Chan","doi":"10.1109/DRC.2004.1367810","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367810","url":null,"abstract":"As MOSFET feature sizes are scaled to the deep sub-0.1 /spl mu/m regime, ultra-shallow source/drain extensions and heavily doped halos are required to suppress short-channel effects. These structures result in high series resistance and parasitic capacitance. A source/drain-on-insulator (SDOI) structure with elevated source/drain combined with an oxide isolation, formed by a shallow trench process underneath the source/drain region, is reported to be a potential solution to simultaneously reduce the series resistance and parasitic capacitance. However, the optimization of SDOI structures is very tricky and the tradeoff between series resistance and gate-to-drain Miller capacitance is not obvious. In this paper, the advantage of this MOSFET source/drain engineered structure is verified by detailed device simulation with extremely scaled MOSFETs. Device structure parameter optimizations are discussed to maximize the intrinsic performance. Design guidelines and potential performance gain with the SDOI structure are also discussed.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"125 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116577246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367774
T. Palacios, A. Chini, D. Buttari, S. Heikman, S. Keller, S.P. Denlaars, U. Mishra
The typical access resistance of GaN-based transistors is almost an order of magnitude higher than in other semiconductor materials like Si or GaAs. This very high access resistance represents a major difficulty for the fabrication of high-speed devices where parasitic delays currently dominate. In this paper, the use of high conductivity modulation doped multiple channel heterostructures in AlGaN/GaN HEMTs is demonstrated. This has allowed the engineering of the differential resistance of the access regions in these transistors, allowing a significant improvement of their DC and RF characteristics. In the future, the combination of multiple channels separated by different barrier heights will increase even more the linearity of the AlGaN/GaN HEMTs.
{"title":"Use of multichannel heterostructures to improve the access resistance and f/sub T/ linearity in GaN-based HEMTs","authors":"T. Palacios, A. Chini, D. Buttari, S. Heikman, S. Keller, S.P. Denlaars, U. Mishra","doi":"10.1109/DRC.2004.1367774","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367774","url":null,"abstract":"The typical access resistance of GaN-based transistors is almost an order of magnitude higher than in other semiconductor materials like Si or GaAs. This very high access resistance represents a major difficulty for the fabrication of high-speed devices where parasitic delays currently dominate. In this paper, the use of high conductivity modulation doped multiple channel heterostructures in AlGaN/GaN HEMTs is demonstrated. This has allowed the engineering of the differential resistance of the access regions in these transistors, allowing a significant improvement of their DC and RF characteristics. In the future, the combination of multiple channels separated by different barrier heights will increase even more the linearity of the AlGaN/GaN HEMTs.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126250235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367756
T. Jackson
This paper begins with a broad outline of the current state of semiconductor development with an emphasis on applications. It follows by considering in detail active matrix organic light emitting diode displays (AMOLEDs) using thin film transistors (TFTs). Organic TFTs (OTFT) are then described along with their application in display technology.
{"title":"Electronics anywhere [TFT and display technology examples]","authors":"T. Jackson","doi":"10.1109/DRC.2004.1367756","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367756","url":null,"abstract":"This paper begins with a broad outline of the current state of semiconductor development with an emphasis on applications. It follows by considering in detail active matrix organic light emitting diode displays (AMOLEDs) using thin film transistors (TFTs). Organic TFTs (OTFT) are then described along with their application in display technology.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"92 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128015808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367760
H. Li, T. Pompl, C. Young, T. Rhoad, J. Saulters, J. Peterson, M. Gardner, G.A. Brown, G. Bersuker, P. Zeitzoff, J. Price, P. Hung, A. Diebold, H. Huff
A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.
{"title":"N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]","authors":"H. Li, T. Pompl, C. Young, T. Rhoad, J. Saulters, J. Peterson, M. Gardner, G.A. Brown, G. Bersuker, P. Zeitzoff, J. Price, P. Hung, A. Diebold, H. Huff","doi":"10.1109/DRC.2004.1367760","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367760","url":null,"abstract":"A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128461726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-21DOI: 10.1109/DRC.2004.1367761
R. Choi, B. Lee, K. Matthews, J. Sim, G. Bersuker, L. Larson, J.C. Lee
Hafnium based materials like hafnium silicate (HfSiON) have been studied intensively for replacing conventional SiO/sub 2/, as gate dielectrics. In addition to dielectric breakdown and other wearout characteristics, threshold voltage shift (Vth) caused by electrical stress is one of the major reliability concerns. In this work, it has been found that a significant portion of V/sub th/ shift, induced by Fowler-Nordheim (FN) stress, is actually reversible. The origin of this V/sub th/ instability has been investigated and its implications on conventional reliability tests are discussed.
{"title":"Relaxation of FN stress induced V/sub th/ shift at NMOSFETs with HfSiON gate dielectric and TiN gate electrode","authors":"R. Choi, B. Lee, K. Matthews, J. Sim, G. Bersuker, L. Larson, J.C. Lee","doi":"10.1109/DRC.2004.1367761","DOIUrl":"https://doi.org/10.1109/DRC.2004.1367761","url":null,"abstract":"Hafnium based materials like hafnium silicate (HfSiON) have been studied intensively for replacing conventional SiO/sub 2/, as gate dielectrics. In addition to dielectric breakdown and other wearout characteristics, threshold voltage shift (Vth) caused by electrical stress is one of the major reliability concerns. In this work, it has been found that a significant portion of V/sub th/ shift, induced by Fowler-Nordheim (FN) stress, is actually reversible. The origin of this V/sub th/ instability has been investigated and its implications on conventional reliability tests are discussed.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128738711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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