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2007 IEEE Electrical Performance of Electronic Packaging最新文献

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Macromodels of IC Buffers Allowing for Large Power Supply Fluctuations 允许大电源波动的IC缓冲器的宏观模型
Pub Date : 2007-11-21 DOI: 10.1109/EPEP.2007.4387199
I. Stievano, C. Siviero, I. Maio, F. Canavero
This paper addresses the generation of enhanced behavioral models for digital IC buffers. The proposed models can reproduce the behavior of real devices also for large fluctuations of the power supply voltage. The models can be easily estimated from port transient responses and can be effectively implemented in any commercial tool as SPICE subcircuits or VHDL-AMS descriptions.
本文讨论了数字集成电路缓冲器增强行为模型的生成。所提出的模型也能在电源电压波动较大的情况下再现实际器件的行为。该模型可以很容易地从端口瞬态响应中估计,并且可以有效地在任何商业工具中实现,如SPICE子电路或VHDL-AMS描述。
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引用次数: 1
A Rapid Link Analysis Technique Using Four-Port Scattering Parameters 基于四端口散射参数的快速链路分析技术
Pub Date : 2007-11-21 DOI: 10.1109/EPEP.2007.4387188
B. McCoy, J. Coker, R. Techentin, B. Gilbert, E. Daniel
A rapid link analysis technique is presented which simulates link performance using 4-port S-parameter models and pseudorandom driver stimulus. The mathematical technique and validation through simulation and hardware measurements of eye diagrams are presented.
提出了一种基于4端口s参数模型和伪随机驱动刺激的快速链路分析技术。给出了眼图的数学方法,并通过仿真和硬件测试进行了验证。
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引用次数: 2
Measurement of Supply Pin Current Distributions in Integrated Circuit Packages 集成电路封装中电源引脚电流分布的测量
Pub Date : 2007-11-21 DOI: 10.1109/EPEP.2007.4387109
J. Weaver, M. Horowitz
Maintaining low supply impedance is a critical task in modern high-performance chip and system design, and this depends on how the current flows on the chip, package, and board power distribution layers. Using a simple inductive pickup loop previously described, we measure the per-pin via currents for a large VLSI chip in operation. Interestingly, the variation in AC current across the package was only 33%. indicating that for this chip current crowding was not an issue. Furthermore, we measured the board bypass capacitance currents as well, and found that the capacitors supplied between 80%n and 120% of the peak transient currents of the pins to which I hey were connected. Since the maximum current is only slightly larger than the current required by the attached pin, the board bypass capacitance primarily affects the pin it is connected to, and does not really bypass the other VDD pins in that region.
在现代高性能芯片和系统设计中,保持低电源阻抗是一项关键任务,这取决于电流在芯片、封装和电路板配电层上的流动方式。使用前面描述的简单电感拾取环路,我们通过工作中的大型VLSI芯片的电流测量每个引脚。有趣的是,整个封装的交流电流变化只有33%。这表明对于这个芯片,电流拥挤不是问题。此外,我们还测量了电路板旁路电容电流,并发现电容器提供了它们连接的引脚的峰值瞬态电流的80%n和120%之间。由于最大电流仅略大于连接引脚所需的电流,因此电路板旁路电容主要影响它所连接的引脚,而不会真正绕过该区域的其他VDD引脚。
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引用次数: 9
Maintaining System Signal and Power Integrity Characteristics as Part of a Module Cost-Reduction Exercise 保持系统信号和电源的完整性特性是降低模块成本的一部分
Pub Date : 2007-11-21 DOI: 10.1109/EPEP.2007.4387130
P.E. Dahlen, T. Timpane, D. Becker, T.W. Liang, W. Martin, P. Rudrud, G.K. Bartley
This paper describes design activity which involved replacing an existing ceramic single chip module package design with a new organic laminate version, each using the same ASIC, for the purpose of cost reduction, and subject to stringent system level design constraints. Since the electrical properties and characteristics of the ceramic and organic package designs were not absolutely identical, it was necessary to perform electrical equivalency analyses at the system level.
本文描述的设计活动涉及用新的有机层压板版本取代现有的陶瓷单芯片模块封装设计,每个版本都使用相同的ASIC,以降低成本,并受到严格的系统级设计约束。由于陶瓷和有机封装设计的电学性能和特性并不完全相同,因此有必要在系统层面进行电学等效分析。
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引用次数: 1
TwinAx Differential Cable Helical Shield Wrap Modeling 双轴差分电缆螺旋屏蔽包绕建模
Pub Date : 2007-11-21 DOI: 10.1109/EPEP.2007.4387186
D. de Araujo, M. Commens, B. Mutnury, J. Diepenbrock
This paper presents a Full-Wave FEM simulation technique for the shield wrap discontinuities that result in a 'suckout' effect in TwinAx differential cables.
本文针对TwinAx差动电缆中导致“吸出”效应的屏蔽包层不连续现象,提出了一种全波有限元模拟技术。
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引用次数: 3
A Method for Measuring Vref Noise Tolerance of DDR2-SDRAM on Test Board Simulatig Actual Memory Module 模拟实际内存模块测试板上测量DDR2-SDRAM Vref噪声容限的方法
Pub Date : 2007-11-21 DOI: 10.1109/EPEP.2007.4387110
Y. Uematsu, H. Osaka, Y. Nishio, S. Hatano
Aiming to achieve double data rate-synchronous DRAM (DDR-SDRAM) at low-cost and with high noise tolerance by setting adequate Vref target impedance, we have established a measurement setup for Vref noise tolerance of DDR2-SDRAM on test board simulating actual memory module and measured various properties. The measured Vref noise tolerance has strong frequency-dependency; the higher the frequency, the larger the noise tolerance. We believe that this is because the intrinsic low pass filter consisted of on-chip electrical components in the test chip.
为了以低成本和高噪声容限实现双数据速率同步DRAM (DDR-SDRAM),通过设置适当的Vref目标阻抗,我们在模拟实际内存模块的测试板上建立了DDR2-SDRAM的Vref噪声容限测量装置,并测量了各项性能。测量的Vref噪声容限具有较强的频率依赖性;频率越高,噪声容忍度越大。我们认为这是因为在测试芯片上的固有低通滤波器由片上电子元件组成。
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引用次数: 1
A Novel EBG Power Plane with Stopband Enhancement using Artificial Substrate 一种基于人工衬底的阻带增强EBG功率平面
Pub Date : 2007-11-21 DOI: 10.1109/EPEP.2007.4387158
Ting-Kuang Wang, Tzu-Wei Han, Tzong-Lin Wu
Based on the conventional low-period coplanar EBG (LPC-EBG) structure, a novel power plane is proposed to extend the bandwidth of the stopband for ground bounce elimination using artificial substrate EBG (AS-EBG) structure. With properly embedded high-K rods and air rods in the substrate of the LPC-EBG power plane, the resonance frequencies can be shifted and thus result in the enhancement of the first stopband. Over 60% improvement of the stopband bandwidth can be achieved in this work. This improvement is also verified by the dispersion diagram calculated using the 2-D transmission-line model.
在传统低周期共面EBG (LPC-EBG)结构的基础上,提出了一种新型的功率平面,利用人工衬底EBG (AS-EBG)结构扩展阻带的带宽,用于消除地面反弹。在LPC-EBG功率平面的衬底中适当嵌入高k棒和空气棒,可以使谐振频率移位,从而增强第一阻带。该方法可使阻带带宽提高60%以上。利用二维传输在线模型计算的色散图也验证了这种改进。
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引用次数: 8
Coupled Analysis of Quasi-static and Full-Wave Solution towards IC, Package and Board Co-design 面向集成电路、封装和电路板协同设计的准静态和全波耦合分析
Pub Date : 2007-11-21 DOI: 10.1109/EPEP.2007.4387137
J. Mao, G. Fitzgerald, A. Kuo, S. Wane
In this paper, cascade-related approach and global one-single model methodology are investigated and compared in reference to real-world System-in-Package (SiP) product, which is designed using Cadence-SiP, and analyzed using Optimal SiP-enabled tool suite. A complete multi-level path, which consists of three portions-integrated circuit (IC), package and printed-circuit-board (PCB) -is selected as a test vehicle to investigate the limit of cascade-based approach. The results from quasi-static and full-wave simulation are compared, and the advantage of full-wave as well as limitation of quasi-static model are discussed. An innovative concept, referenced as "residual S-parameter", is proposed to characterize the coupling at the interface of IC, package and PCB, which plays an important role in the cascading of individual modules. Impact of the proposed concept on power integrity (PI) and signal integrity (SI) analysis is emphasized. Comparisons between full-wave, quasi-static and measurement results for representative component elements (interconnect, coupled bond wires) are discussed.
本文对级联相关方法和全局单模型方法进行了研究,并与使用Cadence-SiP设计的实际系统级封装(SiP)产品进行了比较,并使用支持最优SiP的工具套件进行了分析。选择由集成电路(IC)、封装和印刷电路板(PCB)三部分组成的完整多级路径作为测试载体,研究基于级联的方法的局限性。比较了准静态模型和全波模型的模拟结果,讨论了全波模型的优点和准静态模型的局限性。提出了一个创新的概念,称为“剩余s参数”,以表征集成电路、封装和PCB接口的耦合,这在单个模块的级联中起着重要作用。强调了所提概念对功率完整性(PI)和信号完整性(SI)分析的影响。讨论了代表性元件(互连线、耦合键合线)的全波、准静态和测量结果的比较。
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引用次数: 11
Design, Analysis, and Optimization of DDR2 Memory Power Delivery Network DDR2存储器供电网络的设计、分析与优化
Pub Date : 2007-11-21 DOI: 10.1109/EPEP.2007.4387131
Junho Lee, Hyunseok Kim, Kimyung Kyung, Minyoung You, Hyungdong Lee, Kunwoo Park, Byong-Tae Chung
In this paper, design procedure and analysis method of power delivery network of DDR2 memory chip are introduced. The power delivery network of memory chip is optimized by tuning the location of power/ground chip pad and on-chip decoupling capacitor's W/L size. The results show that the properly designed power/ground chip pads and decoupling capacitors greatly reduce power noise, resulting in the reduction of chip cost by using less area for on-chip decoupling capacitor.
本文介绍了DDR2存储芯片供电网络的设计过程和分析方法。通过调整电源/地片垫的位置和片上去耦电容的W/L大小,优化存储芯片的供电网络。结果表明,合理设计的电源/地芯片衬垫和去耦电容器可大大降低功率噪声,从而减少片上去耦电容器的面积,从而降低芯片成本。
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引用次数: 3
Characterization of Metamaterial Interconnects 超材料互连的表征
Pub Date : 2007-11-21 DOI: 10.1109/EPEP.2007.4387163
A. Suntives, A. Khajooeizadeh, R. Abhari
In this paper, a metamaterial interconnect is investigated and evaluated through simulations and measurements. Short-pulse propagation technique is utilized to characterize the propagation constant of the metamaterial transmission line. The extracted beta is subsequently used in the design of a metamaterial backward coupler, which is compared with a conventional microstrip coupler experimentally. The metamaterial coupler demonstrates superior performance over its conventional microstrip counterpart.
本文通过模拟和测量对一种超材料互连进行了研究和评价。利用短脉冲传输技术表征超材料传输线的传输常数。随后将提取的β用于超材料反向耦合器的设计,并与传统微带耦合器进行了实验比较。该超材料耦合器的性能优于传统的微带耦合器。
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引用次数: 2
期刊
2007 IEEE Electrical Performance of Electronic Packaging
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