Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496401
T. Cheung, H. Wong, Y. Cheng
Internal signal propagation with voltage swing less than the supply voltage have been proposed through various architecture or structures. Reduced supply voltage in digital and analog circuits is considered to be one of the best methods for achieving real low power dissipation circuits. In this paper, pass-transistor logic with suppressed internal voltage-swing is investigated and analyzed. A proposal on a reduced swing 14-bit parity generator and carry generation blocks of a parallel full adder are also given. In addition, optimization on propagation delay can be achieved by proper tapering of the dimension of the transistors.
{"title":"Pass-transistor logic and its sub-Vdd voltage-swing behaviours in low-voltage circuit design","authors":"T. Cheung, H. Wong, Y. Cheng","doi":"10.1109/TENCON.1995.496401","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496401","url":null,"abstract":"Internal signal propagation with voltage swing less than the supply voltage have been proposed through various architecture or structures. Reduced supply voltage in digital and analog circuits is considered to be one of the best methods for achieving real low power dissipation circuits. In this paper, pass-transistor logic with suppressed internal voltage-swing is investigated and analyzed. A proposal on a reduced swing 14-bit parity generator and carry generation blocks of a parallel full adder are also given. In addition, optimization on propagation delay can be achieved by proper tapering of the dimension of the transistors.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124196066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496444
H.C. Huang, P. Cheng, H. Kwok
A digital input driver was designed and integrated with an active matrix nematic liquid-crystal-on-silicon (LCOS) display. Fabricated by conventional 2-/spl mu/m CMOS technology, the driver in the periphery of the active matrix can easily incorporate versatile electronic functions into the silicon backplane. This integration makes the LCOS display easier to be interfaced with different image sources of various formats and, hence, leads to a versatile display system.
设计了一种数字输入驱动器，并将其与有源矩阵向列式硅基液晶显示器集成在一起。采用传统的2-/spl μ m CMOS技术制造，在有源矩阵外围的驱动器可以很容易地将多种电子功能集成到硅背板中。这种集成使得LCOS显示器更容易与各种格式的不同图像源连接，从而形成多功能显示系统。
{"title":"Integrated digital input driver for active matrix liquid-crystal-on-silicon display","authors":"H.C. Huang, P. Cheng, H. Kwok","doi":"10.1109/TENCON.1995.496444","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496444","url":null,"abstract":"A digital input driver was designed and integrated with an active matrix nematic liquid-crystal-on-silicon (LCOS) display. Fabricated by conventional 2-/spl mu/m CMOS technology, the driver in the periphery of the active matrix can easily incorporate versatile electronic functions into the silicon backplane. This integration makes the LCOS display easier to be interfaced with different image sources of various formats and, hence, leads to a versatile display system.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122498763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496356
H. Ng, K. Lam, W. K. Tai
We describe a connectionist architecture which shows promise in obtaining the global optimal solution to the classical minimum spanning tree problem in a time independent of the problem size. Using commonly available analogue electronic components, a network prototype was found to give the global optimal solution within the microseconds range. Simulation results and limiting factors of the performance of analog and VLSI implementation circuits are discussed.
{"title":"Analog and VLSI implementation of connectionist network for minimum spanning tree problems","authors":"H. Ng, K. Lam, W. K. Tai","doi":"10.1109/TENCON.1995.496356","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496356","url":null,"abstract":"We describe a connectionist architecture which shows promise in obtaining the global optimal solution to the classical minimum spanning tree problem in a time independent of the problem size. Using commonly available analogue electronic components, a network prototype was found to give the global optimal solution within the microseconds range. Simulation results and limiting factors of the performance of analog and VLSI implementation circuits are discussed.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122690917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496441
S. Lee, Sung-Hoon Park, H. Lee, C. Kim, Chul‐Hi Han
A driving method which makes it possible to use conventional digital driver ICs and to achieve multi-gray displays with simple computation is proposed. Low cost video-rate 320/spl times/240 8-gray STN-LCD has been realized using the proposed method which adopts multi-line selection scheme.
{"title":"REALIZATION OF VIDEO-RATE STN DISPLAY USING ROW VOLTAGE MODULATION METHOD","authors":"S. Lee, Sung-Hoon Park, H. Lee, C. Kim, Chul‐Hi Han","doi":"10.1109/TENCON.1995.496441","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496441","url":null,"abstract":"A driving method which makes it possible to use conventional digital driver ICs and to achieve multi-gray displays with simple computation is proposed. Low cost video-rate 320/spl times/240 8-gray STN-LCD has been realized using the proposed method which adopts multi-line selection scheme.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121138806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496432
Tommy M. L. Lai, J. Sin, P. Ko
In order to provide high breakdown voltage in thin-film SOI devices, a linear doping profile in the drift region is needed. The linear doping profile can be obtained by using a lateral variation doping technique. In this technique, a smeared-out dopant distribution is implemented through the use of a sequence of small opening slits in the oxide with subsequent impurity implantation and drive-in processes. In this paper, an analytical model is presented to describe the impurity distribution of a finite width impurity source which is used to form the linear doping profile. This model provides a basis for determination of the slits width and silts spacing which are required to implement the linear doping profile.
{"title":"A finite width impurity source model for linear doping profiles","authors":"Tommy M. L. Lai, J. Sin, P. Ko","doi":"10.1109/TENCON.1995.496432","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496432","url":null,"abstract":"In order to provide high breakdown voltage in thin-film SOI devices, a linear doping profile in the drift region is needed. The linear doping profile can be obtained by using a lateral variation doping technique. In this technique, a smeared-out dopant distribution is implemented through the use of a sequence of small opening slits in the oxide with subsequent impurity implantation and drive-in processes. In this paper, an analytical model is presented to describe the impurity distribution of a finite width impurity source which is used to form the linear doping profile. This model provides a basis for determination of the slits width and silts spacing which are required to implement the linear doping profile.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121332814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496351
Yang-Hua Chang
A thin AlGaAs passivation ledge on the extrinsic base surfaces of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is widely used to reduce the extrinsic base surface recombination current and increase the common emitter current gain. However, the design of the ledge and its effectiveness on base current reduction need to be further investigated. In this paper, HBTs with different ledge structures are analyzed with 2-dimensional simulation. The results indicate that a thinner ledge provides better suppression of electron lateral (horizontal) diffusion in the base, and therefore reduces the electron component in base current. Optimization of the ledge design and GaAs surface passivation process is essential for device reliability, too. A new device structure with heavily doped extrinsic base layers is proposed to further improve the base current.
{"title":"Design study of passivation ledge in AlGaAs/GaAs heterojunction bipolar transistors","authors":"Yang-Hua Chang","doi":"10.1109/TENCON.1995.496351","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496351","url":null,"abstract":"A thin AlGaAs passivation ledge on the extrinsic base surfaces of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is widely used to reduce the extrinsic base surface recombination current and increase the common emitter current gain. However, the design of the ledge and its effectiveness on base current reduction need to be further investigated. In this paper, HBTs with different ledge structures are analyzed with 2-dimensional simulation. The results indicate that a thinner ledge provides better suppression of electron lateral (horizontal) diffusion in the base, and therefore reduces the electron component in base current. Optimization of the ledge design and GaAs surface passivation process is essential for device reliability, too. A new device structure with heavily doped extrinsic base layers is proposed to further improve the base current.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122068326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496393
W. Qi, B. Li, G. Jiang, W.N. Huang, Z. Gu
The Co/a-SiGe/Si solid state reaction has been studied in this paper. The experimental results demonstrated the simultaneously SiGe/Si solid phase hetero-epitaxy and CoSi/sub 2//SiGe contact formation. The SiGe crystallization is a result of the Ge rejection and interdiffusion with Si during the Co/a-SiGe/Si ternary interaction.
{"title":"CoSi/sub 2//SiGe contact formation by Co/a-SiGe/Si solid state reaction","authors":"W. Qi, B. Li, G. Jiang, W.N. Huang, Z. Gu","doi":"10.1109/TENCON.1995.496393","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496393","url":null,"abstract":"The Co/a-SiGe/Si solid state reaction has been studied in this paper. The experimental results demonstrated the simultaneously SiGe/Si solid phase hetero-epitaxy and CoSi/sub 2//SiGe contact formation. The SiGe crystallization is a result of the Ge rejection and interdiffusion with Si during the Co/a-SiGe/Si ternary interaction.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"58 34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125036993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496324
Jin-Biao Huang, Chang Liu, F. Jiang, S. Tung, Y. Tai, Chih-Ming Ho
A poly-silicon hot-film shear-stress sensor insulated by a vacuum-chamber underneath has been designed and fabricated by the surface micromachining technology. The sensor is operated at both constant current and constant temperature modes. The dynamic performance (including time constant and cut-off frequency) measurement, calibration, and temperature compensation of the sensor have been realized.
{"title":"Fluidic shear-stress measurement using surface-micromachined sensors","authors":"Jin-Biao Huang, Chang Liu, F. Jiang, S. Tung, Y. Tai, Chih-Ming Ho","doi":"10.1109/TENCON.1995.496324","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496324","url":null,"abstract":"A poly-silicon hot-film shear-stress sensor insulated by a vacuum-chamber underneath has been designed and fabricated by the surface micromachining technology. The sensor is operated at both constant current and constant temperature modes. The dynamic performance (including time constant and cut-off frequency) measurement, calibration, and temperature compensation of the sensor have been realized.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126755199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496340
Michael C. Y. Chan, E. Li, K. S. Chan
High indium concentration In/sub 0.65/Ga/sub 0.35/As/Al/sub 0.33/Ga/sub 0.67/As superlattices on GaAs substrates are useful for modulators and optical communication applications. This is due to the lowest loss 1.55 /spl mu/m optimum wavelength for operation of fiber optic systems. The optical parameters such as absorption coefficient and change in refractive index with applied electric field are investigated.
{"title":"Electro-absorption and refraction at 1.5 /spl mu/m in InGaAs/AlGaAs superlattice growth on GaAs substrate","authors":"Michael C. Y. Chan, E. Li, K. S. Chan","doi":"10.1109/TENCON.1995.496340","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496340","url":null,"abstract":"High indium concentration In/sub 0.65/Ga/sub 0.35/As/Al/sub 0.33/Ga/sub 0.67/As superlattices on GaAs substrates are useful for modulators and optical communication applications. This is due to the lowest loss 1.55 /spl mu/m optimum wavelength for operation of fiber optic systems. The optical parameters such as absorption coefficient and change in refractive index with applied electric field are investigated.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126873026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496443
S. Czaja, J. Robertson
This paper describes the implementation of a Viterbi decoder with a modified list-of-two List Output Viterbi Algorithm (LOVA) which is used to decode variable data rate frames in Code Division Multiple Access (CDMA) mobile stations. It performs the decoding of convolutional code k=9, rate=1/2 for fall, half, quarter, and eighth data rate frames. This Viterbi decoder is a part of a CDMA base-band processor used in an IS-95 cellular and Personal Communication System (PCS) mobile terminal.
{"title":"Variable data rate Viterbi decoder with modified LOVA algorithm","authors":"S. Czaja, J. Robertson","doi":"10.1109/TENCON.1995.496443","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496443","url":null,"abstract":"This paper describes the implementation of a Viterbi decoder with a modified list-of-two List Output Viterbi Algorithm (LOVA) which is used to decode variable data rate frames in Code Division Multiple Access (CDMA) mobile stations. It performs the decoding of convolutional code k=9, rate=1/2 for fall, half, quarter, and eighth data rate frames. This Viterbi decoder is a part of a CDMA base-band processor used in an IS-95 cellular and Personal Communication System (PCS) mobile terminal.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117107535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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