Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496336
B. Weiss
In this paper the processing, properties and applications of interdiffusion in III-V semiconductor quantum well structures for optoelectronic device applications are reviewed. The interdiffusion process and its influence on the characteristics of a range of III-V quantum well structures are discussed. The use of this process for the post growth modification of QW structures is also discussed, including the tuning of laser characteristics. In addition, the use of the process for three dimensional structuring of devices is important for the isolation in optical integrated circuits.
{"title":"Localised bandgap engineering in III-V semiconductor quantum well structures for optoelectronic devices","authors":"B. Weiss","doi":"10.1109/TENCON.1995.496336","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496336","url":null,"abstract":"In this paper the processing, properties and applications of interdiffusion in III-V semiconductor quantum well structures for optoelectronic device applications are reviewed. The interdiffusion process and its influence on the characteristics of a range of III-V quantum well structures are discussed. The use of this process for the post growth modification of QW structures is also discussed, including the tuning of laser characteristics. In addition, the use of the process for three dimensional structuring of devices is important for the isolation in optical integrated circuits.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126674821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496434
J. Zeng, P. Mawby, M. Towers, K. Board
A new hybrid LDMOS-IGBT structure using SOI film is reported. The new device integrates the advantages of SOI technology, the conductivity modulation of IGBT and the high switching speed of DMOSFET.
{"title":"A new hybrid SOI LDMOS-IGBT power transistor","authors":"J. Zeng, P. Mawby, M. Towers, K. Board","doi":"10.1109/TENCON.1995.496434","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496434","url":null,"abstract":"A new hybrid LDMOS-IGBT structure using SOI film is reported. The new device integrates the advantages of SOI technology, the conductivity modulation of IGBT and the high switching speed of DMOSFET.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125932810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496320
Y. Nishi
Summary form only given, as follows. This paper discusses the past, present and the foreseeable future of silicon-based IC technology, placing the focus on the factors that have driven IC technology and the industry until today, and how they could change in the future. The role of consortia in the United States and Japan on the IC industry; technology drivers and their contributions to characterize technological features; and the trends of technology, R&D and manufacturing are the central theme.
{"title":"Perspective of silicon-based IC technology","authors":"Y. Nishi","doi":"10.1109/TENCON.1995.496320","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496320","url":null,"abstract":"Summary form only given, as follows. This paper discusses the past, present and the foreseeable future of silicon-based IC technology, placing the focus on the factors that have driven IC technology and the industry until today, and how they could change in the future. The role of consortia in the United States and Japan on the IC industry; technology drivers and their contributions to characterize technological features; and the trends of technology, R&D and manufacturing are the central theme.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134301813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496439
D.M. Kim, Y. Jun, Y. Sohn, J. Kim, I. Choi
The split-gate flash memory device is characterized. The oxide breakdown due to cumulative electron tunneling, viz. repeated erasure is investigated with the use of current injection experiments. The results are correlated with the observed device cycling behaviour. Also data for the gate disturbance, programming efficiency and capacitive coupling coefficients are presented and discussed.
{"title":"Characterization of split-gate flash memory devices: reliability, gate-disturbance and capacitive coupling coefficients","authors":"D.M. Kim, Y. Jun, Y. Sohn, J. Kim, I. Choi","doi":"10.1109/TENCON.1995.496439","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496439","url":null,"abstract":"The split-gate flash memory device is characterized. The oxide breakdown due to cumulative electron tunneling, viz. repeated erasure is investigated with the use of current injection experiments. The results are correlated with the observed device cycling behaviour. Also data for the gate disturbance, programming efficiency and capacitive coupling coefficients are presented and discussed.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132436512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496425
W. Qi, B. Li, G. Jiang, Z. Gu, T. Kwok, R.J. Zhang, P. Chu
The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si/sub 1-x/Ge/sub x//Si can be achieved with different compositions through high temperature thermal processes such as boron diffusion, annealing and oxidation.
{"title":"Observation of solid phase epitaxial growth of amorphous SiGe on Si(100) substrate","authors":"W. Qi, B. Li, G. Jiang, Z. Gu, T. Kwok, R.J. Zhang, P. Chu","doi":"10.1109/TENCON.1995.496425","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496425","url":null,"abstract":"The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si/sub 1-x/Ge/sub x//Si can be achieved with different compositions through high temperature thermal processes such as boron diffusion, annealing and oxidation.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"23 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132312681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496367
Kk Wong, Zhenan Tang, J. Sin, P. Chan, P. Cheung, H. Hiraoka
The application of a polymer to enhance the selectivity of a tin dioxide gas sensor is presented. Commercial polymer, XU218 of Ciba-Geigy company, is coated on the sensing film of a tin dioxide gas sensor FIGARO TGS842 which was designed to detect methane. The polymer coated sensor is calibrated in a high accuracy testing chamber that is controlled by PC with GPIB and mass flow controllers (MFCs). Three gases, hydrogen, methane, and ammonia, are used to investigate the response of the sensor. It is found that the sensor shows a characteristic change in response to ammonia and almost negligible change in response to hydrogen and methane.
{"title":"Selectivity enhancement of tin dioxide gas sensor with polymer membrane","authors":"Kk Wong, Zhenan Tang, J. Sin, P. Chan, P. Cheung, H. Hiraoka","doi":"10.1109/TENCON.1995.496367","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496367","url":null,"abstract":"The application of a polymer to enhance the selectivity of a tin dioxide gas sensor is presented. Commercial polymer, XU218 of Ciba-Geigy company, is coated on the sensing film of a tin dioxide gas sensor FIGARO TGS842 which was designed to detect methane. The polymer coated sensor is calibrated in a high accuracy testing chamber that is controlled by PC with GPIB and mass flow controllers (MFCs). Three gases, hydrogen, methane, and ammonia, are used to investigate the response of the sensor. It is found that the sensor shows a characteristic change in response to ammonia and almost negligible change in response to hydrogen and methane.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131998051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496371
T. Eng, S. Kan, G. Wong
We demonstrate the fabrication and the operation of voltage-controlled movable SOI optical waveguides. The fabrication process is based on surface micromachining the SOI substrates. The dynamic response is studied. Our results indicate that a switching voltage of only a few volts is enough to produce a useful deflection amplitude of the guided light for typical fiber optic switching applications. A deflection amplitude of 290 /spl mu/m for the guided light is demonstrated with voltage-controlled electrostatic actuation.
{"title":"Voltage-controlled micromechanical SOI optical waveguides","authors":"T. Eng, S. Kan, G. Wong","doi":"10.1109/TENCON.1995.496371","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496371","url":null,"abstract":"We demonstrate the fabrication and the operation of voltage-controlled movable SOI optical waveguides. The fabrication process is based on surface micromachining the SOI substrates. The dynamic response is studied. Our results indicate that a switching voltage of only a few volts is enough to produce a useful deflection amplitude of the guided light for typical fiber optic switching applications. A deflection amplitude of 290 /spl mu/m for the guided light is demonstrated with voltage-controlled electrostatic actuation.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131019360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496392
E. Jelenkovic, K. Tong
It is shown that nitridation of sputtered oxide by reactive sputtering can give a hardened oxide-silicon interface with reduced interface states generation after stress. SIMS analysis has confirmed the existence of SiN peak close to the oxide/silicon interface. A stacked SiO/sub 2//SiO/sub x/N/sub y/ structure is discussed relative to charge trapping, leakage current and mid-gap voltage shift.
{"title":"Nitridation of sputtered silicon dioxide films","authors":"E. Jelenkovic, K. Tong","doi":"10.1109/TENCON.1995.496392","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496392","url":null,"abstract":"It is shown that nitridation of sputtered oxide by reactive sputtering can give a hardened oxide-silicon interface with reduced interface states generation after stress. SIMS analysis has confirmed the existence of SiN peak close to the oxide/silicon interface. A stacked SiO/sub 2//SiO/sub x/N/sub y/ structure is discussed relative to charge trapping, leakage current and mid-gap voltage shift.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"19 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123361631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496395
Hui Lin, Rong Liu, Bingsen Chen, Hongfa Luan
The technology and equipment of the infrared rapid thermal annealing for VLSI is reported. The equipment used for rapid thermal annealing has been made with an radio frequency (RF)-induced graphite heater in a quartz housing as an infrared heating source. By using this technology and equipment the fabrication of shallow junction, the formation of silicide, the effect of BPSG reflow and annihilating the micro defects and thermal donor in CZ Si single crystal are discussed.
{"title":"Technology of infrared rapid thermal annealing and its application in VLSI","authors":"Hui Lin, Rong Liu, Bingsen Chen, Hongfa Luan","doi":"10.1109/TENCON.1995.496395","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496395","url":null,"abstract":"The technology and equipment of the infrared rapid thermal annealing for VLSI is reported. The equipment used for rapid thermal annealing has been made with an radio frequency (RF)-induced graphite heater in a quartz housing as an infrared heating source. By using this technology and equipment the fabrication of shallow junction, the formation of silicide, the effect of BPSG reflow and annihilating the micro defects and thermal donor in CZ Si single crystal are discussed.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129217249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496448
S. Sonh, Hoonmo Yang, M. Lee
Efficient executions of branch instructions are one of the most important issues in implementing high performance microprocessors. Branching instructions are above 20% of total instruction in most programs. BTB (Branch Target Buffer) enhances the speed of branch instruction execution by predicting the branch path, including currently executed branch instruction address, prediction information, and target address. The BTB is designed as a 4-way set associative organization with 256 branch entries. Pseudo-LRU algorithm is used for replacement of lines instead of ordinary LRU algorithm. Also IP(Instruction Pointer) chain is designed for verifying the BTB.
{"title":"An implementation of branch target buffer for high performance applications","authors":"S. Sonh, Hoonmo Yang, M. Lee","doi":"10.1109/TENCON.1995.496448","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496448","url":null,"abstract":"Efficient executions of branch instructions are one of the most important issues in implementing high performance microprocessors. Branching instructions are above 20% of total instruction in most programs. BTB (Branch Target Buffer) enhances the speed of branch instruction execution by predicting the branch path, including currently executed branch instruction address, prediction information, and target address. The BTB is designed as a 4-way set associative organization with 256 branch entries. Pseudo-LRU algorithm is used for replacement of lines instead of ordinary LRU algorithm. Also IP(Instruction Pointer) chain is designed for verifying the BTB.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124282378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：