Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496336
B. Weiss
In this paper the processing, properties and applications of interdiffusion in III-V semiconductor quantum well structures for optoelectronic device applications are reviewed. The interdiffusion process and its influence on the characteristics of a range of III-V quantum well structures are discussed. The use of this process for the post growth modification of QW structures is also discussed, including the tuning of laser characteristics. In addition, the use of the process for three dimensional structuring of devices is important for the isolation in optical integrated circuits.
{"title":"Localised bandgap engineering in III-V semiconductor quantum well structures for optoelectronic devices","authors":"B. Weiss","doi":"10.1109/TENCON.1995.496336","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496336","url":null,"abstract":"In this paper the processing, properties and applications of interdiffusion in III-V semiconductor quantum well structures for optoelectronic device applications are reviewed. The interdiffusion process and its influence on the characteristics of a range of III-V quantum well structures are discussed. The use of this process for the post growth modification of QW structures is also discussed, including the tuning of laser characteristics. In addition, the use of the process for three dimensional structuring of devices is important for the isolation in optical integrated circuits.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126674821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496425
W. Qi, B. Li, G. Jiang, Z. Gu, T. Kwok, R.J. Zhang, P. Chu
The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si/sub 1-x/Ge/sub x//Si can be achieved with different compositions through high temperature thermal processes such as boron diffusion, annealing and oxidation.
{"title":"Observation of solid phase epitaxial growth of amorphous SiGe on Si(100) substrate","authors":"W. Qi, B. Li, G. Jiang, Z. Gu, T. Kwok, R.J. Zhang, P. Chu","doi":"10.1109/TENCON.1995.496425","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496425","url":null,"abstract":"The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si/sub 1-x/Ge/sub x//Si can be achieved with different compositions through high temperature thermal processes such as boron diffusion, annealing and oxidation.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"23 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132312681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496439
D.M. Kim, Y. Jun, Y. Sohn, J. Kim, I. Choi
The split-gate flash memory device is characterized. The oxide breakdown due to cumulative electron tunneling, viz. repeated erasure is investigated with the use of current injection experiments. The results are correlated with the observed device cycling behaviour. Also data for the gate disturbance, programming efficiency and capacitive coupling coefficients are presented and discussed.
{"title":"Characterization of split-gate flash memory devices: reliability, gate-disturbance and capacitive coupling coefficients","authors":"D.M. Kim, Y. Jun, Y. Sohn, J. Kim, I. Choi","doi":"10.1109/TENCON.1995.496439","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496439","url":null,"abstract":"The split-gate flash memory device is characterized. The oxide breakdown due to cumulative electron tunneling, viz. repeated erasure is investigated with the use of current injection experiments. The results are correlated with the observed device cycling behaviour. Also data for the gate disturbance, programming efficiency and capacitive coupling coefficients are presented and discussed.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132436512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496320
Y. Nishi
Summary form only given, as follows. This paper discusses the past, present and the foreseeable future of silicon-based IC technology, placing the focus on the factors that have driven IC technology and the industry until today, and how they could change in the future. The role of consortia in the United States and Japan on the IC industry; technology drivers and their contributions to characterize technological features; and the trends of technology, R&D and manufacturing are the central theme.
{"title":"Perspective of silicon-based IC technology","authors":"Y. Nishi","doi":"10.1109/TENCON.1995.496320","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496320","url":null,"abstract":"Summary form only given, as follows. This paper discusses the past, present and the foreseeable future of silicon-based IC technology, placing the focus on the factors that have driven IC technology and the industry until today, and how they could change in the future. The role of consortia in the United States and Japan on the IC industry; technology drivers and their contributions to characterize technological features; and the trends of technology, R&D and manufacturing are the central theme.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134301813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496371
T. Eng, S. Kan, G. Wong
We demonstrate the fabrication and the operation of voltage-controlled movable SOI optical waveguides. The fabrication process is based on surface micromachining the SOI substrates. The dynamic response is studied. Our results indicate that a switching voltage of only a few volts is enough to produce a useful deflection amplitude of the guided light for typical fiber optic switching applications. A deflection amplitude of 290 /spl mu/m for the guided light is demonstrated with voltage-controlled electrostatic actuation.
{"title":"Voltage-controlled micromechanical SOI optical waveguides","authors":"T. Eng, S. Kan, G. Wong","doi":"10.1109/TENCON.1995.496371","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496371","url":null,"abstract":"We demonstrate the fabrication and the operation of voltage-controlled movable SOI optical waveguides. The fabrication process is based on surface micromachining the SOI substrates. The dynamic response is studied. Our results indicate that a switching voltage of only a few volts is enough to produce a useful deflection amplitude of the guided light for typical fiber optic switching applications. A deflection amplitude of 290 /spl mu/m for the guided light is demonstrated with voltage-controlled electrostatic actuation.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131019360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496367
Kk Wong, Zhenan Tang, J. Sin, P. Chan, P. Cheung, H. Hiraoka
The application of a polymer to enhance the selectivity of a tin dioxide gas sensor is presented. Commercial polymer, XU218 of Ciba-Geigy company, is coated on the sensing film of a tin dioxide gas sensor FIGARO TGS842 which was designed to detect methane. The polymer coated sensor is calibrated in a high accuracy testing chamber that is controlled by PC with GPIB and mass flow controllers (MFCs). Three gases, hydrogen, methane, and ammonia, are used to investigate the response of the sensor. It is found that the sensor shows a characteristic change in response to ammonia and almost negligible change in response to hydrogen and methane.
{"title":"Selectivity enhancement of tin dioxide gas sensor with polymer membrane","authors":"Kk Wong, Zhenan Tang, J. Sin, P. Chan, P. Cheung, H. Hiraoka","doi":"10.1109/TENCON.1995.496367","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496367","url":null,"abstract":"The application of a polymer to enhance the selectivity of a tin dioxide gas sensor is presented. Commercial polymer, XU218 of Ciba-Geigy company, is coated on the sensing film of a tin dioxide gas sensor FIGARO TGS842 which was designed to detect methane. The polymer coated sensor is calibrated in a high accuracy testing chamber that is controlled by PC with GPIB and mass flow controllers (MFCs). Three gases, hydrogen, methane, and ammonia, are used to investigate the response of the sensor. It is found that the sensor shows a characteristic change in response to ammonia and almost negligible change in response to hydrogen and methane.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131998051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496351
Yang-Hua Chang
A thin AlGaAs passivation ledge on the extrinsic base surfaces of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is widely used to reduce the extrinsic base surface recombination current and increase the common emitter current gain. However, the design of the ledge and its effectiveness on base current reduction need to be further investigated. In this paper, HBTs with different ledge structures are analyzed with 2-dimensional simulation. The results indicate that a thinner ledge provides better suppression of electron lateral (horizontal) diffusion in the base, and therefore reduces the electron component in base current. Optimization of the ledge design and GaAs surface passivation process is essential for device reliability, too. A new device structure with heavily doped extrinsic base layers is proposed to further improve the base current.
{"title":"Design study of passivation ledge in AlGaAs/GaAs heterojunction bipolar transistors","authors":"Yang-Hua Chang","doi":"10.1109/TENCON.1995.496351","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496351","url":null,"abstract":"A thin AlGaAs passivation ledge on the extrinsic base surfaces of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is widely used to reduce the extrinsic base surface recombination current and increase the common emitter current gain. However, the design of the ledge and its effectiveness on base current reduction need to be further investigated. In this paper, HBTs with different ledge structures are analyzed with 2-dimensional simulation. The results indicate that a thinner ledge provides better suppression of electron lateral (horizontal) diffusion in the base, and therefore reduces the electron component in base current. Optimization of the ledge design and GaAs surface passivation process is essential for device reliability, too. A new device structure with heavily doped extrinsic base layers is proposed to further improve the base current.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122068326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496379
H. Sanada, N. Nagai
This paper presents a simple, general and accurate analytic-numerical method to solve one-dimensional quantum mechanics problems. The method is based on the analogy of wave propagation between the transmission-line and the potential structure, and is applicable to potential barriers, wells, and superlattices. A guideline for designing new quantum effect devices can be easily obtained.
{"title":"Circuit theoretical approach for one-dimensional quantum mechanics problems","authors":"H. Sanada, N. Nagai","doi":"10.1109/TENCON.1995.496379","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496379","url":null,"abstract":"This paper presents a simple, general and accurate analytic-numerical method to solve one-dimensional quantum mechanics problems. The method is based on the analogy of wave propagation between the transmission-line and the potential structure, and is applicable to potential barriers, wells, and superlattices. A guideline for designing new quantum effect devices can be easily obtained.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121802750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496426
T. Han, D. Cho, S.-M. Lee, B.R. Ryum
A low thermal-budget SiGe base heterojunction bipolar transistor (HBT) with a record current gain-Early voltage product (/spl beta//spl middot/Va) has been fabricated using atmospheric pressure (AP) CVD. After growing the SiGe layer on the wafer patterned by local oxidation of silicon (LOCOS), the HBT received thermal annealing only one time for drive-in and activation of arsenic (As) dopant in the polysilicon-emitter. For the 1/spl times/4 /spl mu/m/sup 2/ emitter, typical value of /spl beta//spl middot/Va is 200,000 V (/spl beta/=2,000 and Va=100 V) at the collector current of 0.9 mA.
{"title":"Atmospheric pressure CVD-grown SiGe base HBT with the highest value of current gain-Early voltage product","authors":"T. Han, D. Cho, S.-M. Lee, B.R. Ryum","doi":"10.1109/TENCON.1995.496426","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496426","url":null,"abstract":"A low thermal-budget SiGe base heterojunction bipolar transistor (HBT) with a record current gain-Early voltage product (/spl beta//spl middot/Va) has been fabricated using atmospheric pressure (AP) CVD. After growing the SiGe layer on the wafer patterned by local oxidation of silicon (LOCOS), the HBT received thermal annealing only one time for drive-in and activation of arsenic (As) dopant in the polysilicon-emitter. For the 1/spl times/4 /spl mu/m/sup 2/ emitter, typical value of /spl beta//spl middot/Va is 200,000 V (/spl beta/=2,000 and Va=100 V) at the collector current of 0.9 mA.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126084036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496376
J. Sim
In order to evaluate the velocity overshoot phenomenon in the deep submicron MOS devices, the energy balance equation should be incorporated with the drift-diffusion equation that includes thermoelectric diffusion. This paper presents an analytical current model for deep submicron MOS devices by solving the energy balance equation. Our model results show good agreement with experimental results. We have successfully derived the drain current model composed of drift and thermoelectric currents.
{"title":"An energy balance equation based 0.1 /spl mu/m MOSFET model including velocity overshoot behavior","authors":"J. Sim","doi":"10.1109/TENCON.1995.496376","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496376","url":null,"abstract":"In order to evaluate the velocity overshoot phenomenon in the deep submicron MOS devices, the energy balance equation should be incorporated with the drift-diffusion equation that includes thermoelectric diffusion. This paper presents an analytical current model for deep submicron MOS devices by solving the energy balance equation. Our model results show good agreement with experimental results. We have successfully derived the drain current model composed of drift and thermoelectric currents.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116356968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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