Pub Date : 2024-01-30DOI: 10.1109/TNANO.2024.3360312
Manoj Kumar;Ming-Hung Wu;Tuo-Hung Hou;Manan Suri
We propose a Non-Volatile Ternary Content Addressable Memory (nvTCAM) by utilizing two Resistive Random-Access Memory (RRAM) cells integrated with individual selector transistors (i.e., 2-Transistor, 2-RRAM). A 2T2R cell configured either in complementary resistive switching mode (i.e., if one 1T1R cell is in low resistance state then the other cell will be in high resistance state or vice-versa) or both RRAMs in high resistance state is utilized to implement a single nvTCAM unit. Through Monte-Carlo (MC) simulations and power supply scaling (i.e., $V_{DD}$ varying from 1.4 V to 2.2 V) effects, reliability of the proposed cell was studied. Moreover, we performed the simulations for various sizes of word length from 1-bit to 64-bits and calculated the energy and delay parameters. We compared the proposed nvTCAM cell with various existing CMOS/NVM (Non-Volatile Memory) designs. Our proposed nvTCAM design provides $geq 2times$ area efficiency as compared to CMOS-NVM counterparts and even upto $sim 6times$ area saving with respect to CMOS-based volatile TCAM. The proposed design achieves atleast 1.68× to 2.27× energy efficiency, as compared to existing CMOS/RRAM implementations. Moreover the energy saving is further increased upto $sim 1400times$ as compared to magnetic/ferroelectric-based nvTCAM counterparts.
{"title":"CMOS-RRAM Based Non-Volatile Ternary Content Addressable Memory (nvTCAM)","authors":"Manoj Kumar;Ming-Hung Wu;Tuo-Hung Hou;Manan Suri","doi":"10.1109/TNANO.2024.3360312","DOIUrl":"10.1109/TNANO.2024.3360312","url":null,"abstract":"We propose a Non-Volatile Ternary Content Addressable Memory (nvTCAM) by utilizing two Resistive Random-Access Memory (RRAM) cells integrated with individual selector transistors (i.e., 2-Transistor, 2-RRAM). A 2T2R cell configured either in complementary resistive switching mode (i.e., if one 1T1R cell is in low resistance state then the other cell will be in high resistance state or vice-versa) or both RRAMs in high resistance state is utilized to implement a single nvTCAM unit. Through Monte-Carlo (MC) simulations and power supply scaling (i.e., \u0000<inline-formula><tex-math>$V_{DD}$</tex-math></inline-formula>\u0000 varying from 1.4 V to 2.2 V) effects, reliability of the proposed cell was studied. Moreover, we performed the simulations for various sizes of word length from 1-bit to 64-bits and calculated the energy and delay parameters. We compared the proposed nvTCAM cell with various existing CMOS/NVM (Non-Volatile Memory) designs. Our proposed nvTCAM design provides \u0000<inline-formula><tex-math>$geq 2times$</tex-math></inline-formula>\u0000 area efficiency as compared to CMOS-NVM counterparts and even upto \u0000<inline-formula><tex-math>$sim 6times$</tex-math></inline-formula>\u0000 area saving with respect to CMOS-based volatile TCAM. The proposed design achieves atleast 1.68× to 2.27× energy efficiency, as compared to existing CMOS/RRAM implementations. Moreover the energy saving is further increased upto \u0000<inline-formula><tex-math>$sim 1400times$</tex-math></inline-formula>\u0000 as compared to magnetic/ferroelectric-based nvTCAM counterparts.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"203-207"},"PeriodicalIF":2.4,"publicationDate":"2024-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139956601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A systematized experimental interpretation of BaTiO 3 (B), ZnO (Z), and BaTiO 3 /ZnO (B/Z) based sensors, fabricated via a facile solution-based method is reported. The structural properties analysis of all the sensors fabricated reveals the formation of characteristic respective dominant peaks (hexagonal, tetragonal, and heterostructure (hexagonal and tetragonal) for B, Z, and B/Z respectively). The decrease of band gap (2.97 eV-B/Z) due to double heterojunction formation is evident from tauc plot analysis. The fabricated multi-sensing sensors were subjected to both gas (CO (carbon monoxide) & (CH 4 ) methane) and acceleration sensing systems individually to explore sensing properties. Comparably, the B/Z sensor showed improved gas sensing properties in terms of better response time (s), recovery time (s), and sensor response (%) at lower concentrations (10 ppm) for CO gas ∼1.12, ∼2.2 and ∼61.54 and CH 4 gas ∼4.12, ∼58.69, ∼14 respectively at room temperature. Likewise, the B/Z sensor exhibited a maximum output voltage of 2.31 V at a 13 Hz resonant frequency and a sensitivity of 1.9316 Vg −1 compared to the other fabricated sensors.
{"title":"Experimental Evaluation of Tailored Double Heterojunction Non-Toxic Metal Oxide-Based Nanostructured Sensor for Multi-Sensing Application","authors":"Binowesley R;Kirubaveni Savarimuthu;Kiruthika Ramany;Govindaraj Rajamanickam","doi":"10.1109/TNANO.2024.3359697","DOIUrl":"10.1109/TNANO.2024.3359697","url":null,"abstract":"A systematized experimental interpretation of BaTiO\u0000<sub>3</sub>\u0000 (B), ZnO (Z), and BaTiO\u0000<sub>3</sub>\u0000/ZnO (B/Z) based sensors, fabricated via a facile solution-based method is reported. The structural properties analysis of all the sensors fabricated reveals the formation of characteristic respective dominant peaks (hexagonal, tetragonal, and heterostructure (hexagonal and tetragonal) for B, Z, and B/Z respectively). The decrease of band gap (2.97 eV-B/Z) due to double heterojunction formation is evident from tauc plot analysis. The fabricated multi-sensing sensors were subjected to both gas (CO (carbon monoxide) & (CH\u0000<sub>4</sub>\u0000) methane) and acceleration sensing systems individually to explore sensing properties. Comparably, the B/Z sensor showed improved gas sensing properties in terms of better response time (s), recovery time (s), and sensor response (%) at lower concentrations (10 ppm) for CO gas ∼1.12, ∼2.2 and ∼61.54 and CH\u0000<sub>4</sub>\u0000 gas ∼4.12, ∼58.69, ∼14 respectively at room temperature. Likewise, the B/Z sensor exhibited a maximum output voltage of 2.31 V at a 13 Hz resonant frequency and a sensitivity of 1.9316 Vg\u0000<sup>−1</sup>\u0000 compared to the other fabricated sensors.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"164-169"},"PeriodicalIF":2.4,"publicationDate":"2024-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139950616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Resistive random access memory (RRAM) with edge-contacted graphene electrode has much lower power consumption and excellent scalability as in other's previous studies, which shows great potential for in-memory computing, neuromorphic integrated circuits, Big Data analytics, etc. A physics-based SPICE compact model of RRAM with graphene electrode is proposed to capture the electro-thermal characteristics of the device with consideration of various physical effects in resistive switching processes, such as the temperature-dependent conductive filament (CF) evolution, tunneling between CF tip and electrode, graphene electrode oxidation, and self-heating effect. The equivalent thermal circuit (ETC) model is developed to capture the temperature response in RRAM. The influence of graphene electrode oxidation on the resistance of the device is taken into consideration. The compact model is verified by comparing the simulated characteristics of the set/reset process and forming process with other's published experimental data.
{"title":"A Compact Model for Electro-Thermal Simulation of Resistive Random Access Memory With Graphene Electrode","authors":"Xingyu Zhai;Yun Li;Wen-Yan Yin;Shuo Zhang;Wenxuan Zang;Yanbin Yang;Hao Xie;Wenchao Chen","doi":"10.1109/TNANO.2024.3358950","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3358950","url":null,"abstract":"Resistive random access memory (RRAM) with edge-contacted graphene electrode has much lower power consumption and excellent scalability as in other's previous studies, which shows great potential for in-memory computing, neuromorphic integrated circuits, Big Data analytics, etc. A physics-based SPICE compact model of RRAM with graphene electrode is proposed to capture the electro-thermal characteristics of the device with consideration of various physical effects in resistive switching processes, such as the temperature-dependent conductive filament (CF) evolution, tunneling between CF tip and electrode, graphene electrode oxidation, and self-heating effect. The equivalent thermal circuit (ETC) model is developed to capture the temperature response in RRAM. The influence of graphene electrode oxidation on the resistance of the device is taken into consideration. The compact model is verified by comparing the simulated characteristics of the set/reset process and forming process with other's published experimental data.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"151-157"},"PeriodicalIF":2.4,"publicationDate":"2024-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139908649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stochastic computing (SC) division circuits have gained importance in recent years compared to other arithmetic circuits due to their low complexity as a result of an accuracy tradeoff. Designing a division circuit is already complex in conventional binary-based hardware systems. Developing an accurate and efficient SC division circuit is an open research problem. Prior work proposed different SC division circuits by using multiplexers and JK-flip-flop units, which may require correlated or uncorrelated input bit-streams. This study is primarily centered on exploring a cost-effective and highly efficient bit-stream generator specifically designed for SC division circuits. In conjunction with this objective, we assess the performance of multiple bit-stream generators and analyze the impact of correlation on SC division. We compare different designs in terms of accuracy and hardware cost. Moreover, we discuss a low-cost and energy-efficient bit-stream generator via powers-of-2 Van der Corput (VDC) sequences. Among the tested sequence generators, our best results were achieved with VDC sequences. Our evaluation results demonstrate that the novel VDC-based design yields promising outputs, resulting in a 15.5% reduction in the area-delay product and an 18.05% saving in energy consumption for the same accuracy level compared to conventional bit-stream generators. Significantly, our investigation reveals that employing the proposed generator improves the precision compared to the state-of-the-art. We validate the proposed architecture with an image processing case study, achieving high PSNR and structural similarity values.
与其他算术电路相比，随机计算（SC）除法电路近年来因其在精度权衡下的低复杂度而变得越来越重要。在传统的基于二进制的硬件系统中，设计除法电路已经非常复杂。开发精确高效的 SC 除法电路是一个有待解决的研究课题。之前的研究通过使用多路复用器和 JK 触发器单元提出了不同的 SC 除法电路，这些电路可能需要相关或不相关的输入比特流。本研究的主要核心是探索一种专为 SC 除法电路设计的经济高效的位流发生器。结合这一目标，我们评估了多个位流发生器的性能，并分析了相关性对 SC 除法的影响。我们比较了不同设计的精度和硬件成本。此外，我们还讨论了通过 Van der Corput（VDC）序列的 2 次方（powers-of-2 Van der Corput）设计的低成本、高能效比特流发生器。在测试过的序列发生器中，我们使用 VDC 序列取得了最佳结果。我们的评估结果表明，基于 VDC 的新型设计具有良好的输出效果，与传统位流发生器相比，在相同精度水平下，面积-延迟乘积减少了 15.5%，能耗节省了 18.05%。值得注意的是，我们的研究表明，与最先进的技术相比，采用建议的生成器可提高精度。我们通过一项图像处理案例研究验证了所提出的架构，获得了较高的 PSNR 和结构相似度值。
{"title":"Low-Cost and Highly-Efficient Bit-Stream Generator for Stochastic Computing Division","authors":"Mehran Shoushtari Moghadam;Sercan Aygun;Sina Asadi;M. Hassan Najafi","doi":"10.1109/TNANO.2024.3358395","DOIUrl":"10.1109/TNANO.2024.3358395","url":null,"abstract":"Stochastic computing (SC) division circuits have gained importance in recent years compared to other arithmetic circuits due to their low complexity as a result of an accuracy tradeoff. Designing a division circuit is already complex in conventional binary-based hardware systems. Developing an accurate and efficient SC division circuit is an open research problem. Prior work proposed different SC division circuits by using multiplexers and JK-flip-flop units, which may require correlated or uncorrelated input bit-streams. This study is primarily centered on exploring a cost-effective and highly efficient bit-stream generator specifically designed for SC division circuits. In conjunction with this objective, we assess the performance of multiple bit-stream generators and analyze the impact of correlation on SC division. We compare different designs in terms of accuracy and hardware cost. Moreover, we discuss a low-cost and energy-efficient bit-stream generator via powers-of-2 Van der Corput (VDC) sequences. Among the tested sequence generators, our best results were achieved with VDC sequences. Our evaluation results demonstrate that the novel VDC-based design yields promising outputs, resulting in a 15.5% reduction in the area-delay product and an 18.05% saving in energy consumption for the same accuracy level compared to conventional bit-stream generators. Significantly, our investigation reveals that employing the proposed generator improves the precision compared to the state-of-the-art. We validate the proposed architecture with an image processing case study, achieving high PSNR and structural similarity values.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"195-202"},"PeriodicalIF":2.4,"publicationDate":"2024-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139950560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Using density functional theory calculations, we demonstrate the quantum capacitance of the VS 2 electrode which can be improved by doping with non-metallic elements such as nitrogen (N), phosphorus (P), and arsenic (As) atoms. The radius, charge, and morphology of these non-metallic elements help to improve the performance of VS 2 material as electrodes of supercapacitors. The As-doped VS 2 monolayer demonstrated the maximum quantum capacitance of 31.2369 μF/cm 2 at 300 K. At 1200 K, quantum capacitance reaches the value of 25.2149 μF/cm 2 , showing the inconsiderable change in value for this wide range of temperature variation. Additionally, the other important properties of undoped and doped VS 2 monolayers such as density of states, energy band structure, electrical conductivity, thermal conductivity, and the Seebeck coefficient were also computed and examined in detail. The band structure of the P and As-doped VS 2 monolayers showed a metallic nature, which is suitable for electrode application. In the case of As-doped VS 2 material, a high figure of merit of 3.536 was observed by using DFT-D2 calculations, due to the large Seebeck coefficient and significant electrical conductivity. Our findings will be helpful in further exploring the suitability of VS 2 monolayers as electrodes of supercapacitors.
{"title":"DFT Calculations for Temperature Stable Quantum Capacitance of VS2 Based Electrodes for Supercapacitors","authors":"Ashish Kumar Yadav;Shreevathsa N S;Rohit Singh;Partha Pratim Das;Vivek Garg;Sushil Kumar Pandey","doi":"10.1109/TNANO.2024.3358017","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3358017","url":null,"abstract":"Using density functional theory calculations, we demonstrate the quantum capacitance of the VS\u0000<sub>2</sub>\u0000 electrode which can be improved by doping with non-metallic elements such as nitrogen (N), phosphorus (P), and arsenic (As) atoms. The radius, charge, and morphology of these non-metallic elements help to improve the performance of VS\u0000<sub>2</sub>\u0000 material as electrodes of supercapacitors. The As-doped VS\u0000<sub>2</sub>\u0000 monolayer demonstrated the maximum quantum capacitance of 31.2369 μF/cm\u0000<sup>2</sup>\u0000 at 300 K. At 1200 K, quantum capacitance reaches the value of 25.2149 μF/cm\u0000<sup>2</sup>\u0000, showing the inconsiderable change in value for this wide range of temperature variation. Additionally, the other important properties of undoped and doped VS\u0000<sub>2</sub>\u0000 monolayers such as density of states, energy band structure, electrical conductivity, thermal conductivity, and the Seebeck coefficient were also computed and examined in detail. The band structure of the P and As-doped VS\u0000<sub>2</sub>\u0000 monolayers showed a metallic nature, which is suitable for electrode application. In the case of As-doped VS\u0000<sub>2</sub>\u0000 material, a high figure of merit of 3.536 was observed by using DFT-D2 calculations, due to the large Seebeck coefficient and significant electrical conductivity. Our findings will be helpful in further exploring the suitability of VS\u0000<sub>2</sub>\u0000 monolayers as electrodes of supercapacitors.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"132-138"},"PeriodicalIF":2.4,"publicationDate":"2024-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139749899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-23DOI: 10.1109/TNANO.2024.3357068
Siddharth Barve;Rashmi Jha
Supervised machine learning techniques are becoming subject of significant interest in data analysis. However, the high memory bandwidth requirement of current implementations, scarcity of labeled data, and dynamic environments in many applications prevent implementation of supervised machine learning techniques. In this work, we propose a neuromorphic architecture implementing the self-organizing feature map algorithm using nanoscale ferroelectric field-effect transistors (FeFETs) and complementary metal-oxide-semiconductor (CMOS) technology to produce a semi-supervised NeuroSOFM-Classifier. A best matching input (BMI) identifier circuit allows for very few labeled samples to be used to provide supervised class labels for each hardware neuron in the NeuroSOFM-Classifier. The NeuroSOFM-Classifier architecture can then be used to inference or classify the new data in real-time. This NeuroSOFM-Classifier, trained on just 2% of the labeled data, is capable of classifying COVID-19 patient chest x-rays with an average accuracy of 83%.
{"title":"NeuroSOFM-Classifier: Nanoscale FeFETs Based Low Power Neuromorphic Architecture for Classification Using Continuous Real-Time Unsupervised Clustering","authors":"Siddharth Barve;Rashmi Jha","doi":"10.1109/TNANO.2024.3357068","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3357068","url":null,"abstract":"Supervised machine learning techniques are becoming subject of significant interest in data analysis. However, the high memory bandwidth requirement of current implementations, scarcity of labeled data, and dynamic environments in many applications prevent implementation of supervised machine learning techniques. In this work, we propose a neuromorphic architecture implementing the self-organizing feature map algorithm using nanoscale ferroelectric field-effect transistors (FeFETs) and complementary metal-oxide-semiconductor (CMOS) technology to produce a semi-supervised NeuroSOFM-Classifier. A best matching input (BMI) identifier circuit allows for very few labeled samples to be used to provide supervised class labels for each hardware neuron in the NeuroSOFM-Classifier. The NeuroSOFM-Classifier architecture can then be used to inference or classify the new data in real-time. This NeuroSOFM-Classifier, trained on just 2% of the labeled data, is capable of classifying COVID-19 patient chest x-rays with an average accuracy of 83%.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"124-131"},"PeriodicalIF":2.4,"publicationDate":"2024-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139727483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-16DOI: 10.1109/TNANO.2024.3354460
Sunny Kumar;Vikash Mishra;Kolla Lakshmi Ganapathi;Muralidhar Miryala;M. S. Ramachandra Rao;Tejendra Dixit
The van Der Waals material, hexagonal boron nitride (h-BN) is being studied extensively for electronics, sensing, photonics, and quantum technology. Identifying distinct point-defects that may be employed to create qubits and single photon emitters with specific properties has recently boosted defect engineering research in h-BN. The assignment of defects to specific characteristics of h-BN is a subject of contention and so necessitates further investigation. We have examined the defect stability under different growth conditions for the assignment of defect states for the aforementioned applications using first-principles calculations. In this work, it is found that boron Frenkel pairs (V B -B i ) play very critical role under N-rich and N-poor growth conditions. Boron Frenkel pairs were found to activate magnetic behaviour (with 0.45 μ B ) by forming spin active defect-states in forbidden gap. Furthermore, four distinct absorption peaks in the sub-bandgap regions (with peak values at 2.47, 2.30, 1.98, and 1.61 eV) have been observed, resulting into the well-known ∼2 eV emission. The large ultraviolet quantum efficiency observed in h-BN has been explained by considering Frenkel pairs as primary defect centres, which leads to strong photocatalytic and photovoltaic properties. This work will establish Frenkel pairs as one of the most intriguing defect states in h-BN leading towards various optoelectronic and quantum applications.
{"title":"Ab-Initio Investigations into Frenkel Defects in Hexagonal Boron Nitride for Quantum Optoelectronic Applications","authors":"Sunny Kumar;Vikash Mishra;Kolla Lakshmi Ganapathi;Muralidhar Miryala;M. S. Ramachandra Rao;Tejendra Dixit","doi":"10.1109/TNANO.2024.3354460","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3354460","url":null,"abstract":"The van Der Waals material, hexagonal boron nitride (h-BN) is being studied extensively for electronics, sensing, photonics, and quantum technology. Identifying distinct point-defects that may be employed to create qubits and single photon emitters with specific properties has recently boosted defect engineering research in h-BN. The assignment of defects to specific characteristics of h-BN is a subject of contention and so necessitates further investigation. We have examined the defect stability under different growth conditions for the assignment of defect states for the aforementioned applications using first-principles calculations. In this work, it is found that boron Frenkel pairs (V\u0000<sub>B</sub>\u0000-B\u0000<sub>i</sub>\u0000) play very critical role under N-rich and N-poor growth conditions. Boron Frenkel pairs were found to activate magnetic behaviour (with 0.45 μ\u0000<sub>B</sub>\u0000) by forming spin active defect-states in forbidden gap. Furthermore, four distinct absorption peaks in the sub-bandgap regions (with peak values at 2.47, 2.30, 1.98, and 1.61 eV) have been observed, resulting into the well-known ∼2 eV emission. The large ultraviolet quantum efficiency observed in h-BN has been explained by considering Frenkel pairs as primary defect centres, which leads to strong photocatalytic and photovoltaic properties. This work will establish Frenkel pairs as one of the most intriguing defect states in h-BN leading towards various optoelectronic and quantum applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"109-113"},"PeriodicalIF":2.4,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139700413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work presents a novel contribution to graphene/TiO 2 electro-optical modulators based on silicon-on-silica waveguide with a hybrid plasmonic waveguide to achieve ultrafast switching and low-voltage states. Waveguide structure consists of a rectangular silicon core covered by a high relative permittivity TiO 2 dielectric layer with two layers of graphene, air-clad, and silica lower cladding. Effective refractive indices can be tailored to support the propagation of the transverse magnetic mode with a suitable design related to an electro-absorption modulator for simulation results. Modulation depth and bandwidth were enhanced by the waveguide width and dielectric thickness, respectively. Maximum and minimum absorption depths at the driving voltage states can determine modulators. The simulation produced the highest efficient modulator with high speed at 3 dB bandwidth of 93.7 GHz using a low energy consumption of 210.6 fJ/bit, a small footprint (24 μm 2 ), and a broad operating spectrum range from 1310 to 1550 nm. This is because the physical process acts according to the modulator at the Fermi energy of graphene and the structure of the waveguide. These modulators can have practical applications due to their distinctive advantages, including a small device footprint, low voltage operation, ultrafast modulation switching across a broad wavelength range, and low-energy operation.
{"title":"Broadband Graphene/TiO2 Optical Modulator Based on Hybrid Plasmonic Waveguide for Ultrafast Switching and Low-Voltage State","authors":"Wisut Supasai;Suksan Suwanarat;Mongkol Wannaprapa;Papichaya Chaisakul;Apirat Siritaratiwat;Chavis Srichan;Nuttachai Jutong;Sorawit Narkglom;Chayada Surawanitkun","doi":"10.1109/TNANO.2024.3353789","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3353789","url":null,"abstract":"This work presents a novel contribution to graphene/TiO\u0000<sub>2</sub>\u0000 electro-optical modulators based on silicon-on-silica waveguide with a hybrid plasmonic waveguide to achieve ultrafast switching and low-voltage states. Waveguide structure consists of a rectangular silicon core covered by a high relative permittivity TiO\u0000<sub>2</sub>\u0000 dielectric layer with two layers of graphene, air-clad, and silica lower cladding. Effective refractive indices can be tailored to support the propagation of the transverse magnetic mode with a suitable design related to an electro-absorption modulator for simulation results. Modulation depth and bandwidth were enhanced by the waveguide width and dielectric thickness, respectively. Maximum and minimum absorption depths at the driving voltage states can determine modulators. The simulation produced the highest efficient modulator with high speed at 3 dB bandwidth of 93.7 GHz using a low energy consumption of 210.6 fJ/bit, a small footprint (24 μm\u0000<sup>2</sup>\u0000), and a broad operating spectrum range from 1310 to 1550 nm. This is because the physical process acts according to the modulator at the Fermi energy of graphene and the structure of the waveguide. These modulators can have practical applications due to their distinctive advantages, including a small device footprint, low voltage operation, ultrafast modulation switching across a broad wavelength range, and low-energy operation.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"114-123"},"PeriodicalIF":2.4,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10399839","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139654391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-12DOI: 10.1109/TNANO.2024.3353379
Jaafar Abdulkareem Mustafa Alsmael;Serhat Orkun Tan
In this work, Al/p-Si structures with (ZnFe 2 O 4 − PVA) interfacial film, which is grown by the electrospinning-method, have been analyzed by using impedance measurements in the wide frequency interval (2 kHz–2 MHz) at both side of polarization (±4 V). Some fundamental important electrical parameters such as intercept-voltage (V o ), the concentration of acceptor-atoms (N A ), depletion layer width (W d ), and barrier-height (Φ B ) were extracted from intercept and slope of the 1/C 2 vs V plot in the inversion region for each frequency. It has been observed that parameters such as the presence of surface states (N SS ), relaxation or lifetimes (τ), organic interlayer, dipoles or surface polarization in the inversion and depletion regions, especially at low and moderate frequencies, are obviously dependent on the frequency and applied biases. The voltage and frequency dependence profile of the series resistor (R S ), N SS, and also τ were determined from the Nicollian-Brews method and Nicollian-Goetzberger conductance technique, respectively. The magnitude of N SS and the values of τ were calculated from the maximum value of (G P /ω) related to the frequency for different voltage values. The negative capacitance (NC) at about zero biases and the source of the two incongruous peaks in the depletion and accumulation zones were also discussed. While the first peak in the depletion region was a result of N SS , the second peak in the depletion region was caused by the effect of R S .
{"title":"Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe2O4 Doped PVA","authors":"Jaafar Abdulkareem Mustafa Alsmael;Serhat Orkun Tan","doi":"10.1109/TNANO.2024.3353379","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3353379","url":null,"abstract":"In this work, Al/p-Si structures with (ZnFe\u0000<sub>2</sub>\u0000O\u0000<sub>4</sub>\u0000− PVA) interfacial film, which is grown by the electrospinning-method, have been analyzed by using impedance measurements in the wide frequency interval (2 kHz–2 MHz) at both side of polarization (±4 V). Some fundamental important electrical parameters such as intercept-voltage (V\u0000<sub>o</sub>\u0000), the concentration of acceptor-atoms (N\u0000<sub>A</sub>\u0000), depletion layer width (W\u0000<sub>d</sub>\u0000), and barrier-height (Φ\u0000<sub>B</sub>\u0000) were extracted from intercept and slope of the 1/C\u0000<sup>2</sup>\u0000 vs V plot in the inversion region for each frequency. It has been observed that parameters such as the presence of surface states (N\u0000<sub>SS</sub>\u0000), relaxation or lifetimes (τ), organic interlayer, dipoles or surface polarization in the inversion and depletion regions, especially at low and moderate frequencies, are obviously dependent on the frequency and applied biases. The voltage and frequency dependence profile of the series resistor (R\u0000<sub>S</sub>\u0000), N\u0000<sub>SS,</sub>\u0000 and also τ were determined from the Nicollian-Brews method and Nicollian-Goetzberger conductance technique, respectively. The magnitude of N\u0000<sub>SS</sub>\u0000 and the values of τ were calculated from the maximum value of (G\u0000<sub>P</sub>\u0000/ω) related to the frequency for different voltage values. The negative capacitance (NC) at about zero biases and the source of the two incongruous peaks in the depletion and accumulation zones were also discussed. While the first peak in the depletion region was a result of N\u0000<sub>SS</sub>\u0000, the second peak in the depletion region was caused by the effect of R\u0000<sub>S</sub>\u0000.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"102-108"},"PeriodicalIF":2.4,"publicationDate":"2024-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139572650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-29DOI: 10.1109/TNANO.2023.3348129
Sahil Garg;Bhavuk Sharma;Gaurav Mani Khanal;Sanjeev Kumar;Neena Gupta;S. R. Kasjoo;Aimin Song;Arun K. Singh
This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having I-V behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple factor and cut-off frequency has been evaluated and compared for both single and three phase SSDBR. The three-phase self-switching diode bridge rectifier (3P-SSDBR) has a cut-off frequency of ∼400 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 4.73% and 0.59, respectively. While, the single phase self-switching diode bridge rectifier (1P-SSDBR) has a cut-off frequency of ∼300 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 47.86% and 1.94, respectively. Further, to validate the obtained results, the simulation models have been calibrated with experimental and theoretical findings.
{"title":"MoS2 Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers","authors":"Sahil Garg;Bhavuk Sharma;Gaurav Mani Khanal;Sanjeev Kumar;Neena Gupta;S. R. Kasjoo;Aimin Song;Arun K. Singh","doi":"10.1109/TNANO.2023.3348129","DOIUrl":"https://doi.org/10.1109/TNANO.2023.3348129","url":null,"abstract":"This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having \u0000<italic>I-V</i>\u0000 behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple factor and cut-off frequency has been evaluated and compared for both single and three phase SSDBR. The three-phase self-switching diode bridge rectifier (3P-SSDBR) has a cut-off frequency of ∼400 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 4.73% and 0.59, respectively. While, the single phase self-switching diode bridge rectifier (1P-SSDBR) has a cut-off frequency of ∼300 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 47.86% and 1.94, respectively. Further, to validate the obtained results, the simulation models have been calibrated with experimental and theoretical findings.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"55-62"},"PeriodicalIF":2.4,"publicationDate":"2023-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139399831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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