In this study, hydrogen sensors based on In2O3/ZnO nanocubes are fabricated by single step hydrothermal route, and polypeptide is utilized to guide the morphology of the composites to heighten the responsiveness of the sensors to hydrogen at low operating temperatures. A series of analyses and validations are carried out by characterization techniques. Gas sensitivity test results display that the optimal operating temperature of the modified sensing element is reduced by 60 °C compared to the initial element, accompanied by a doubling of the response value (22.12). At the same time, the response time to 100 ppm H2 is 2.5 s. Even more strikingly, the modified gas sensing element has evidently improved the response speed to low-ppm levels hydrogen. Moreover, the sensor components exhibit favorable repeatability, stability and excellent selectivity. By analyzing the characterization data and gas-sensitive test results, the improved responsiveness of the sensing elements is mainly attributed to the synergistic effect of the dilatation in the specific surface area of the gas-sensitive materials and the increase in intergranular contacts.
{"title":"Polypeptide-Regulated the Self-Assembled In2O3/ZnO Nanocubes for Enhanced H2 Gas Sensing at Low Operating Temperatures","authors":"Haoting Zhang;Jiahui Jin;Zhiqiang Yang;Zhenyu Yuan;Fanli Meng","doi":"10.1109/TNANO.2024.3413719","DOIUrl":"10.1109/TNANO.2024.3413719","url":null,"abstract":"In this study, hydrogen sensors based on In\u0000<sub>2</sub>\u0000O\u0000<sub>3</sub>\u0000/ZnO nanocubes are fabricated by single step hydrothermal route, and polypeptide is utilized to guide the morphology of the composites to heighten the responsiveness of the sensors to hydrogen at low operating temperatures. A series of analyses and validations are carried out by characterization techniques. Gas sensitivity test results display that the optimal operating temperature of the modified sensing element is reduced by 60 °C compared to the initial element, accompanied by a doubling of the response value (22.12). At the same time, the response time to 100 ppm H\u0000<sub>2</sub>\u0000 is 2.5 s. Even more strikingly, the modified gas sensing element has evidently improved the response speed to low-ppm levels hydrogen. Moreover, the sensor components exhibit favorable repeatability, stability and excellent selectivity. By analyzing the characterization data and gas-sensitive test results, the improved responsiveness of the sensing elements is mainly attributed to the synergistic effect of the dilatation in the specific surface area of the gas-sensitive materials and the increase in intergranular contacts.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"500-511"},"PeriodicalIF":2.1,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Physical Unclonable Functions (PUFs) have gained widespread attention for their secure key storage, authentication, and anti-counterfeiting applications. While traditional PUFs based on Complementary Metal-Oxide-Semiconductor (CMOS) have been extensively studied, the emergence of memristors offers new opportunities due to their inherent device variations and distinctive resistive switching behaviors. This study explores the construction of reliable PUFs using self-rectifying analog BiFeO$_{3}$ (BFO) memristors. We assess the raw bit error rate (rBER) of the BFO-based PUF under varying voltage challenges and classify the switching behavior into stochastic, transition, and deterministic regions. As the primary objective of this study, we identify the sources of stochastic behavior in the three distinct regions while investigating the physical switching mechanism in BFO cells. Additionally, we propose a key storage method based on memristor variability, including an error correction scheme to enhance the reliability of PUF. This research contributes to a comprehensive understanding of PUF reliability and the underlying sources of intrinsic stochastic behavior in memristive technology.
{"title":"Understanding Stochastic Behavior of Self- Rectifying Memristors for Error-Corrected Physical Unclonable Functions","authors":"Xianyue Zhao;Jonas Ruchti;Christoph Frisch;Kefeng Li;Ziang Chen;Stephan Menzel;Rainer Waser;Heidemarie Schmidt;Ilia Polian;Michael Pehl;Nan Du","doi":"10.1109/TNANO.2024.3413888","DOIUrl":"10.1109/TNANO.2024.3413888","url":null,"abstract":"Physical Unclonable Functions (PUFs) have gained widespread attention for their secure key storage, authentication, and anti-counterfeiting applications. While traditional PUFs based on Complementary Metal-Oxide-Semiconductor (CMOS) have been extensively studied, the emergence of memristors offers new opportunities due to their inherent device variations and distinctive resistive switching behaviors. This study explores the construction of reliable PUFs using self-rectifying analog BiFeO\u0000<inline-formula><tex-math>$_{3}$</tex-math></inline-formula>\u0000 (BFO) memristors. We assess the raw bit error rate (rBER) of the BFO-based PUF under varying voltage challenges and classify the switching behavior into stochastic, transition, and deterministic regions. As the primary objective of this study, we identify the sources of stochastic behavior in the three distinct regions while investigating the physical switching mechanism in BFO cells. Additionally, we propose a key storage method based on memristor variability, including an error correction scheme to enhance the reliability of PUF. This research contributes to a comprehensive understanding of PUF reliability and the underlying sources of intrinsic stochastic behavior in memristive technology.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"490-499"},"PeriodicalIF":2.1,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work explores the growth of vertically aligned zinc oxide nanorod (ZnO NR) arrays on a conductive indium-tin-oxide (ITO) substrate by using a simple hydrothermal solution route method at 95 °C for 3 h. Additionally, the gold nanoparticles (Au NPs) were victoriously adsorbed on the NR surface through a low-cost photochemical method under ultraviolet (UV) light at room temperature for field-emission (FE) emitters. To explore one-dimensional (1-D) nanostructures, high-resolution transmission electron microscope (HR-TEM), X-ray diffraction (XRD), and field-emission scanning electron microscope (FE-SEM) measurement were conducted. It was found that the NRs were almost perpendicular to the substrate with c-axis direction. The Au concentration of the 1-D NR array was 0.75 at% in energy-dispersive X-ray (EDX) result. ZnO nanomaterials with and without Au NPs were labelled 1-D Z@Au-3 and Z@Au-0 NRs, respectively. The turn-on electric field and effective field enhancement factor (β) of the Z@Au-0 NR devices were 4.56 V/μm and 4902, and those of the Z@Au-3 NR devices were 3.25 V/μm and 12955, respectively. Meanwhile, the slope value of the Z@Au-3 sample (6.43) was also lower than that of the Z@Au-0 NR sample (17.01). It can be seen that the Au NPs enhanced the FE property of the emitter. As a result, the designed 1-D ZnO samples with noble Au NPs are an encouraging candidate in future FE-based device applications, which can use in various electronic applications such as FE display panels, X-ray sources, light sources, and parallel electron beam microscopes.
本研究采用一种简单的水热溶液路线方法，在 95 °C、3 小时的条件下，在导电铟锡氧化物（ITO）基底上生长出垂直排列的氧化锌纳米棒（ZnO NR）阵列；此外，还采用一种低成本的光化学方法，在室温紫外线（UV）下将金纳米粒子（Au NPs）成功吸附在 NR 表面，用于场发射（FE）发射器。为了探索一维（1-D）纳米结构，研究人员进行了高分辨率透射电子显微镜（HR-TEM）、X 射线衍射（XRD）和场发射扫描电子显微镜（FE-SEM）测量。结果发现，NRs 几乎垂直于基底的 c 轴方向。能量色散 X 射线（EDX）结果显示，一维 NR 阵列的金浓度为 0.75%。含金纳米粒子和不含金纳米粒子的氧化锌纳米材料分别被标记为一维 Z@Au-3 和 Z@Au-0 NR。Z@Au-0 NR 器件的开启电场和有效场增强因子（β）分别为 4.56 V/μm 和 4902，Z@Au-3 NR 器件的开启电场和有效场增强因子分别为 3.25 V/μm 和 12955。同时，Z@Au-3 样品的斜率值（6.43）也低于 Z@Au-0 NR 样品的斜率值（17.01）。由此可见，金纳米粒子增强了发射器的 FE 特性。因此，所设计的带有惰性金氧化物的一维氧化锌样品是未来基于 FE 的器件应用的一个令人鼓舞的候选材料，可用于各种电子应用，如 FE 显示面板、X 射线源、光源和平行电子束显微镜。
{"title":"Characterization of Au Nanoparticles Adsorbed on 1-D ZnO Nanomaterials Through a Novel Photochemical Synthesis Way for Field- Emission Emitter Applications","authors":"Yen-Lin Chu;Sheng-Joue Young;Po-Kai Chen;Sandeep Arya;Tung-Te Chu","doi":"10.1109/TNANO.2024.3409631","DOIUrl":"10.1109/TNANO.2024.3409631","url":null,"abstract":"This work explores the growth of vertically aligned zinc oxide nanorod (ZnO NR) arrays on a conductive indium-tin-oxide (ITO) substrate by using a simple hydrothermal solution route method at 95 °C for 3 h. Additionally, the gold nanoparticles (Au NPs) were victoriously adsorbed on the NR surface through a low-cost photochemical method under ultraviolet (UV) light at room temperature for field-emission (FE) emitters. To explore one-dimensional (1-D) nanostructures, high-resolution transmission electron microscope (HR-TEM), X-ray diffraction (XRD), and field-emission scanning electron microscope (FE-SEM) measurement were conducted. It was found that the NRs were almost perpendicular to the substrate with c-axis direction. The Au concentration of the 1-D NR array was 0.75 at% in energy-dispersive X-ray (EDX) result. ZnO nanomaterials with and without Au NPs were labelled 1-D Z@Au-3 and Z@Au-0 NRs, respectively. The turn-on electric field and effective field enhancement factor (β) of the Z@Au-0 NR devices were 4.56 V/μm and 4902, and those of the Z@Au-3 NR devices were 3.25 V/μm and 12955, respectively. Meanwhile, the slope value of the Z@Au-3 sample (6.43) was also lower than that of the Z@Au-0 NR sample (17.01). It can be seen that the Au NPs enhanced the FE property of the emitter. As a result, the designed 1-D ZnO samples with noble Au NPs are an encouraging candidate in future FE-based device applications, which can use in various electronic applications such as FE display panels, X-ray sources, light sources, and parallel electron beam microscopes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"478-481"},"PeriodicalIF":2.1,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-10DOI: 10.1109/TNANO.2024.3411689
András Horváth;Franciska Rajki;Alon Ascoli;Ronald Tetzlaff
We present simulation results of a deep cellular neural network leveraging memristive dynamics to classify and segment images from commonly examined datasets. We have investigated the use of both volatile (NbOx-Mott) and non-volatile (TaOx) memristive devices in memristive cellular neural networks. We simulated deep neural networks using these devices and compared their image classification and segmentation accuracies on commonly investigated datasets to traditional convolutional and cellular architectures of similar complexity. Our results reveal that the exploitation of memristive dynamics in cellular structures can increase classification accuracy by more than 2.5 percent as compared to the traditional convolutional implementations while concurrently improving the mean intersection over union in semantic segmentation on the Cityscapes dataset by 8 percent.
{"title":"Deep Memristive Cellular Neural Networks for Image Classification and Segmentation","authors":"András Horváth;Franciska Rajki;Alon Ascoli;Ronald Tetzlaff","doi":"10.1109/TNANO.2024.3411689","DOIUrl":"10.1109/TNANO.2024.3411689","url":null,"abstract":"We present simulation results of a deep cellular neural network leveraging memristive dynamics to classify and segment images from commonly examined datasets. We have investigated the use of both volatile (NbO\u0000<sub>x</sub>\u0000-Mott) and non-volatile (TaO\u0000<sub>x</sub>\u0000) memristive devices in memristive cellular neural networks. We simulated deep neural networks using these devices and compared their image classification and segmentation accuracies on commonly investigated datasets to traditional convolutional and cellular architectures of similar complexity. Our results reveal that the exploitation of memristive dynamics in cellular structures can increase classification accuracy by more than 2.5 percent as compared to the traditional convolutional implementations while concurrently improving the mean intersection over union in semantic segmentation on the Cityscapes dataset by 8 percent.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"718-726"},"PeriodicalIF":2.1,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141945962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.1109/TNANO.2024.3409151
Sharmila B;Priyanka Dwivedi
Brain inspired devices are the building block of the neuromorphic based artificial intelligence systems. This paper presents a novel optical memory devices based on the nanostructured V2O5/MoO3. These optical memory devices were fabricated using wafer scalable technology. The fabricated optical memory devices can mimic the synaptic behaviors such as paired pulse facilitation (PPF) index, excitatory postsynaptic current (EPSC), short term plasticity, inhibitory postsynaptic current (IPSC), spike dependent plasticity, long term plasticity and long term retention capability. The proposed device has shown a PPF index of 216% and long term retention time of 5.6 × 103 seconds. The demonstrated optical memory devices have highly sensitive, repeatable and have a potential to be used for neuromorphic computing applications.
{"title":"Nanostructured V2O5/MoO3 Based Devices for Brain Inspired Optical Memory Applications","authors":"Sharmila B;Priyanka Dwivedi","doi":"10.1109/TNANO.2024.3409151","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3409151","url":null,"abstract":"Brain inspired devices are the building block of the neuromorphic based artificial intelligence systems. This paper presents a novel optical memory devices based on the nanostructured V\u0000<sub>2</sub>\u0000O\u0000<sub>5</sub>\u0000/MoO\u0000<sub>3</sub>\u0000. These optical memory devices were fabricated using wafer scalable technology. The fabricated optical memory devices can mimic the synaptic behaviors such as paired pulse facilitation (PPF) index, excitatory postsynaptic current (EPSC), short term plasticity, inhibitory postsynaptic current (IPSC), spike dependent plasticity, long term plasticity and long term retention capability. The proposed device has shown a PPF index of 216% and long term retention time of 5.6 × 10\u0000<sup>3</sup>\u0000 seconds. The demonstrated optical memory devices have highly sensitive, repeatable and have a potential to be used for neuromorphic computing applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"535-540"},"PeriodicalIF":2.1,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141543298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.1109/TNANO.2024.3409055
Sanu Gayen;Suchismita Tewari;Avik Chattopadhyay
In this paper, for the first time, a unique Ge(1-x)Snx alloy-based TFET sensor with a deliberate corner-point in the channel has been proposed for successful detection of S-protein, a significant biomarker. After the validation of our simulation scheme through a process of calibration of an experimentally realized mother GeSn TFET device, the same is turned into the proposed sensor device by suitably creating nanogap cavity in it. The performance of the proposed sensor device has been thoroughly investigated as a function of channel epilayer thickness (CHepi) in terms of a set of performance metrics – P-responsivity and P-sensitivity. Then, by varying the mole-fraction of Ge(1-x)Snx in the proposed sensor, the sensing performance has been studied in terms of the aforementioned performance metrics, along with an additional unique metric known as dynamic sensitivity. Interestingly, it has been observed that the most suitable device in pure electronic domain (digital or analog) is the least suited in sensing domain and vice-versa. This forbids the tendency of blind-picking of device with enhanced performance in pure electronic domain for sensing purpose as well without proper investigation. After a thorough analysis, it is observed that the proposed sensor with CHepi = 10 nm has evolved as the most optimized sensor device while the choice of mole-fraction remains application specific. Also, the ultimately optimized sensor shows a fairly good performance in dealing with the real-time position variability aspect (even if it is due to the repulsive steric effects of S-protein molecules) which results in a partial hybridization issue.
本文首次提出了一种独特的基于 Ge(1-x)Snx 合金的 TFET 传感器，该传感器在通道中特意设置了一个角点，用于成功检测 S 蛋白这种重要的生物标志物。通过对实验中实现的母 GeSn TFET 器件进行校准，验证了我们的模拟方案。根据一组性能指标--P 反应性和 P 灵敏度--沟道外延层厚度 (CHepi) 的函数，对所提出的传感器件的性能进行了深入研究。然后，通过改变拟议传感器中 Ge(1-x)Snx 的摩尔分数，根据上述性能指标以及称为动态灵敏度的额外独特指标对传感性能进行了研究。有趣的是，我们发现在纯电子领域（数字或模拟）最合适的设备在传感领域却最不合适，反之亦然。这就避免了在未进行适当调查的情况下，盲目选择在纯电子领域性能更强的器件用于传感目的。经过深入分析，我们发现 CHepi = 10 nm 的拟议传感器已发展成为最优化的传感器设备，而分子分数的选择仍与具体应用有关。此外，最终优化的传感器在处理实时位置变化方面（即使是由于 S 蛋白分子的排斥立体效应）表现出相当好的性能，这导致了部分杂交问题。
{"title":"A Judicious Exploitation of Electrical Characteristics of a Unique GeSn TFET With Corner-Point for Sensing S-Protein Biomarker","authors":"Sanu Gayen;Suchismita Tewari;Avik Chattopadhyay","doi":"10.1109/TNANO.2024.3409055","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3409055","url":null,"abstract":"In this paper, for the first time, a unique Ge\u0000<sub>(1-x)</sub>\u0000Sn\u0000<sub>x</sub>\u0000 alloy-based TFET sensor with a deliberate corner-point in the channel has been proposed for successful detection of S-protein, a significant biomarker. After the validation of our simulation scheme through a process of calibration of an experimentally realized mother GeSn TFET device, the same is turned into the proposed sensor device by suitably creating nanogap cavity in it. The performance of the proposed sensor device has been thoroughly investigated as a function of channel epilayer thickness (CH\u0000<sub>epi</sub>\u0000) in terms of a set of performance metrics – P-responsivity and P-sensitivity. Then, by varying the mole-fraction of Ge\u0000<sub>(1-x)</sub>\u0000Sn\u0000<sub>x</sub>\u0000 in the proposed sensor, the sensing performance has been studied in terms of the aforementioned performance metrics, along with an additional unique metric known as dynamic sensitivity. Interestingly, it has been observed that the most suitable device in pure electronic domain (digital or analog) is the least suited in sensing domain and vice-versa. This forbids the tendency of blind-picking of device with enhanced performance in pure electronic domain for sensing purpose as well without proper investigation. After a thorough analysis, it is observed that the proposed sensor with CH\u0000<sub>epi</sub>\u0000 = 10 nm has evolved as the most optimized sensor device while the choice of mole-fraction remains application specific. Also, the ultimately optimized sensor shows a fairly good performance in dealing with the real-time position variability aspect (even if it is due to the repulsive steric effects of S-protein molecules) which results in a partial hybridization issue.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"467-473"},"PeriodicalIF":2.1,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-03DOI: 10.1109/TNANO.2024.3408253
Tauseef Ahmed;Mukul Kumar Das
This paper introduces a highly effective method to enhance the power conversion efficiency of thin-film solar cells with a microcrystalline absorber layer. The study involves the creation of a device simulation model that takes into account optical phenomena like light scattering and diffusive reflection, as well as electrical aspects related to the physics of heterointerfaces. The proposed design includes a textured front surface, silicon nanowires on the rear side of the absorber layer, and a back contact-cum-reflector composed of multiple alternative layers. To achieve optimal outcomes, it is essential to determine the ideal values for parameters such as the average width-to-height ratio of the textured front surface, the height of the backside nanowires, and the thickness and doping levels of different layers like ITO, emitter, buffer, and BSF. The findings indicate that when these parameters are set to their optimal values, the proposed structure can achieve a peak efficiency of 13.62%. This marks a substantial improvement of 34.70% when compared to the optimized flat thin-film solar cell structure.
{"title":"Enhanced Efficiency in Thin Film Solar Cells: Optimized Design With Front Nanotextured and Rear Nanowire-Based Light Trapping Structure","authors":"Tauseef Ahmed;Mukul Kumar Das","doi":"10.1109/TNANO.2024.3408253","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3408253","url":null,"abstract":"This paper introduces a highly effective method to enhance the power conversion efficiency of thin-film solar cells with a microcrystalline absorber layer. The study involves the creation of a device simulation model that takes into account optical phenomena like light scattering and diffusive reflection, as well as electrical aspects related to the physics of heterointerfaces. The proposed design includes a textured front surface, silicon nanowires on the rear side of the absorber layer, and a back contact-cum-reflector composed of multiple alternative layers. To achieve optimal outcomes, it is essential to determine the ideal values for parameters such as the average width-to-height ratio of the textured front surface, the height of the backside nanowires, and the thickness and doping levels of different layers like ITO, emitter, buffer, and BSF. The findings indicate that when these parameters are set to their optimal values, the proposed structure can achieve a peak efficiency of 13.62%. This marks a substantial improvement of 34.70% when compared to the optimized flat thin-film solar cell structure.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"456-466"},"PeriodicalIF":2.1,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The adoption of a feasible bump shape exerts a significant impact on the functionality of a 3D IC. The cylindrical bump structure, considered among the most prevalent shape, endures significant delay, power loss and crosstalk challenges. The tapered based TSV-bump structure recently acquired prominence due to their ultra-low fraction of volume and coupling, resulting in significant alleviation of delay and crosstalk issues. The electrical RLGC modeling has been accomplished for cylindrical, barrel, hourglass and the tapered bump structures along with the impact of coupling, passivation and fringing on the redistribution layer (RDL). In order to validate the proposed TSV bump structure, the quantitative values of a via is compared against the EM and experimental results, and a subsequent investigation have been accomplished for the propagation delay, power dissipation, peak noise, insertion and reflection losses. The proposed via bump structure is remarkable consistence with the experimental results with an average deviation of only 3.51%. In addition, the Finite difference time-domain (FDTD) electromagnetic computation is employed to further examine the performance characteristics. Furthermore, it is worth emphasizing that the tapered bump structure can effectively reduce the propagation delay, power dissipation, peak noise, insertion and reflection losses with an average deviation of 34.83%, 28.62%, 29.98%, 13.57%, and 41.06%, respectively, when compared to the barrel, cylindrical and hourglass bumps.
{"title":"Electrical Modeling and Performance Analysis of Cu and CNT Based TSV-Bump-RDL","authors":"Shivangi Chandrakar;Kamal Solanki;Deepika Gupta;Manoj Kumar Majumder","doi":"10.1109/TNANO.2024.3408310","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3408310","url":null,"abstract":"The adoption of a feasible bump shape exerts a significant impact on the functionality of a 3D IC. The cylindrical bump structure, considered among the most prevalent shape, endures significant delay, power loss and crosstalk challenges. The tapered based TSV-bump structure recently acquired prominence due to their ultra-low fraction of volume and coupling, resulting in significant alleviation of delay and crosstalk issues. The electrical \u0000<italic>RLGC</i>\u0000 modeling has been accomplished for cylindrical, barrel, hourglass and the tapered bump structures along with the impact of coupling, passivation and fringing on the redistribution layer (RDL). In order to validate the proposed TSV bump structure, the quantitative values of a via is compared against the EM and experimental results, and a subsequent investigation have been accomplished for the propagation delay, power dissipation, peak noise, insertion and reflection losses. The proposed via bump structure is remarkable consistence with the experimental results with an average deviation of only 3.51%. In addition, the Finite difference time-domain (FDTD) electromagnetic computation is employed to further examine the performance characteristics. Furthermore, it is worth emphasizing that the tapered bump structure can effectively reduce the propagation delay, power dissipation, peak noise, insertion and reflection losses with an average deviation of 34.83%, 28.62%, 29.98%, 13.57%, and 41.06%, respectively, when compared to the barrel, cylindrical and hourglass bumps.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"448-455"},"PeriodicalIF":2.1,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-30DOI: 10.1109/TNANO.2024.3394547
Anshul;Rishu Chaujar
In this article, the electronic and quantum transport properties for the bulk configuration of armchair graphene nanoribbons (AGNRs) with varied number of carbon atoms along AGNR width (N) are investigated. The semi-empirical (SE) Density Functional Theory (DFT) approach is used to calculate the band structure, density of states (DOS), and transmission spectrum for the bulk configuration of AGNR. Further, the AGNRs are used in channel material to analyze the performance of field-effect transistors with Gate Stack (GS) architecture. The result shows that the bandgap value is higher for AGNR (N = 4) with a value of 1.98 eV compared to another bulk configuration of AGNRs. In addition to this, AGNR (N = 4) also shows an improved transmission spectrum. Moreover, the transmission spectrum at varied input voltages and projected local density of states (PLDOS) are also analyzed to study the performance of the proposed devices. The parameters mentioned above give a unique idea for evaluating the performance in terms of resonance peaks and electronic structure for device configurations. The off current (Ioff) is remarkably reduced, and the switching ratio (Ion/Ioff) is significantly improved in GS-AGNR (N = 4) FET compared with other device configurations. Owing to the enhanced switching, this paper highlights GS-AGNR (N = 4) FET as a suitable candidate for low-power applications such as low-power sensors, wireless communication, and medical devices.
{"title":"Semi-Empirical DFT Based Investigation of Electronic and Quantum Transport Properties of Novel GS-AGNR (N) FET","authors":"Anshul;Rishu Chaujar","doi":"10.1109/TNANO.2024.3394547","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3394547","url":null,"abstract":"In this article, the electronic and quantum transport properties for the bulk configuration of armchair graphene nanoribbons (AGNRs) with varied number of carbon atoms along AGNR width (N) are investigated. The semi-empirical (SE) Density Functional Theory (DFT) approach is used to calculate the band structure, density of states (DOS), and transmission spectrum for the bulk configuration of AGNR. Further, the AGNRs are used in channel material to analyze the performance of field-effect transistors with Gate Stack (GS) architecture. The result shows that the bandgap value is higher for AGNR (N = 4) with a value of 1.98 eV compared to another bulk configuration of AGNRs. In addition to this, AGNR (N = 4) also shows an improved transmission spectrum. Moreover, the transmission spectrum at varied input voltages and projected local density of states (PLDOS) are also analyzed to study the performance of the proposed devices. The parameters mentioned above give a unique idea for evaluating the performance in terms of resonance peaks and electronic structure for device configurations. The off current (I\u0000<sub>off</sub>\u0000) is remarkably reduced, and the switching ratio (I\u0000<sub>on</sub>\u0000/I\u0000<sub>off</sub>\u0000) is significantly improved in GS-AGNR (N = 4) FET compared with other device configurations. Owing to the enhanced switching, this paper highlights GS-AGNR (N = 4) FET as a suitable candidate for low-power applications such as low-power sensors, wireless communication, and medical devices.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"400-407"},"PeriodicalIF":2.4,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140844471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-26DOI: 10.1109/TNANO.2024.3394294
Reza Nekovei;Amit Verma
This work explores the low-temperature performance of a field-effect transistor with a carbon nanotube as the active channel. The device topology is an ideal cylindrical gate-all-around with the nanotube coaxially aligned. The nanotube considered is a single-wall zigzag (49,0). Electron transport is modeled using Ensemble Monte Carlo (EMC) simulations coupled self-consistently with the electrostatic solver. The electrostatic solver solves Gauss Law in integral form. Electron scattering mechanisms include longitudinal acoustic and optical phonons and a single radial breathing mode phonon. A wide range of temperatures is considered – from 4K to 220K to determine the effects of temperature in relation to device size and dielectric on the electronic response. Both steady-state and device transient responses are explored. The device is seen to work very well across the wide range of temperatures explored, with differences in performance attributed to the differences in electron scattering rates for different temperatures. In all cases, electrons are found to deliver up to a fraction of a microwatt of power.
{"title":"Low-Temperature Behavior of Single-Wall Carbon Nanotube Gate-all-Around Field-Effect Transistors","authors":"Reza Nekovei;Amit Verma","doi":"10.1109/TNANO.2024.3394294","DOIUrl":"10.1109/TNANO.2024.3394294","url":null,"abstract":"This work explores the low-temperature performance of a field-effect transistor with a carbon nanotube as the active channel. The device topology is an ideal cylindrical gate-all-around with the nanotube coaxially aligned. The nanotube considered is a single-wall zigzag (49,0). Electron transport is modeled using Ensemble Monte Carlo (EMC) simulations coupled self-consistently with the electrostatic solver. The electrostatic solver solves Gauss Law in integral form. Electron scattering mechanisms include longitudinal acoustic and optical phonons and a single radial breathing mode phonon. A wide range of temperatures is considered – from 4K to 220K to determine the effects of temperature in relation to device size and dielectric on the electronic response. Both steady-state and device transient responses are explored. The device is seen to work very well across the wide range of temperatures explored, with differences in performance attributed to the differences in electron scattering rates for different temperatures. In all cases, electrons are found to deliver up to a fraction of a microwatt of power.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"393-399"},"PeriodicalIF":2.4,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140806392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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