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Optimised ladder-climbing rehabilitation training for various stroke severity levels in rats 针对不同中风严重程度的大鼠,优化爬梯康复训练
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-10-18 DOI: 10.1049/cds2.12132
Chi-Chun Chen, Yu-Lin Wang, Ching-Ping Chang

To develop an optimised rehabilitation training system for various severity strokes in rats. The method provided feedback regarding the rat's measured position to a microprocessor, which adjusted the training speed accordingly and enables the rat to continuously exercise in the middle position of the ladder. This created a cyclic control system that provided various training intensities based on timely evaluations of the ladder-climbing capabilities of each rat, thus providing a suitable rehabilitation method for subjects with various stroke severities. The modified neurological severity score, rotarod and cerebral infarction volume results for the 60- and 90-min middle cerebral artery occlusion (MCAO) treadmill groups did not differ significantly from those of the control group. Conversely, the cerebral infarction volumes of the ladder-climbing rehabilitation groups in the 30-, 60-, and 90-min MCAO were all significantly lower than those of the control group (84.03 ± 23.24 vs. 256.77 ± 85.63 (mm3), 265.19 ± 41.12 versus 377.17 ± 90.97 (mm3), and 303.80 ± 47.15 versus 452.68 ± 90.44 (mm3) respectively), thereby indicating the optimised ladder-climbing method as effective for subjects with various stroke severities. Individual differences may cause different exercise capacities for each participant. To accommodate for these exercise capacities, an optimised ladder-climbing rehabilitation training system was proposed, which provided training according to the physical abilities of each participant.

针对不同严重程度的大鼠中风,开发一套优化的康复训练系统。该方法将测量到的大鼠位置反馈给微处理器,微处理器相应调整训练速度,使大鼠在梯子中间位置持续运动。这创造了一个循环控制系统,根据对每只大鼠爬梯能力的及时评估提供不同的训练强度,从而为不同中风严重程度的受试者提供合适的康复方法。60分钟和90分钟脑中动脉闭塞(MCAO)跑步机组的改良神经系统严重程度评分、rotarod和脑梗死体积结果与对照组无显著差异。相反,爬梯康复组在30min、60min和90min的脑梗死体积均显著低于对照组(分别为84.03±23.24 vs. 256.77±85.63 (mm3)、265.19±41.12 vs. 377.17±90.97 (mm3)、303.80±47.15 vs. 452.68±90.44 (mm3)),表明优化后的爬梯康复方法对不同脑卒中严重程度的受试者均有效。个体差异可能导致每个参与者的运动能力不同。为了适应这些运动能力,我们提出了一个优化的爬梯康复训练系统,根据每个参与者的身体能力提供训练。
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引用次数: 0
Retracted: Research on tridimensional monitoring and defence technology of substation 收回:变电站立体监控与防御技术研究
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-09-14 DOI: 10.1049/cds2.12129
Kaiyi Qiu, Xin Liu, Jie Liu, Hongbo Ma, Jingya Li, Zhengchao Zhang, Guangliang Chen, Li Cai

Retraction: [Kaiyi Qiu, Xin Liu, Jie Liu, Hongbo Ma, Jingya Li, Zhengchao Zhang, Guangliang Chen, Li Cai, Research on tridimensional monitoring and defence technology of substation, IET Circuits, Devices & Systems 2022 (https://doi.org/10.1049/cds2.12129)].

The above article from IET Circuits, Devices & Systems, published online on 14 September 2022 in Wiley Online Library (wileyonlinelibrary.com), has been retracted by agreement between the Editor-in-Chief, Harry E. Ruda, the Institution of Engineering and Technology (the IET) and John Wiley and Sons Ltd. This article was published as part of a Guest Edited special issue. Following an investigation, the IET and the journal have determined that the article was not reviewed in line with the journal’s peer review standards and there is evidence that the peer review process of the special issue underwent systematic manipulation. Accordingly, we cannot vouch for the integrity or reliability of the content. As such we have taken the decision to retract the article. The authors have been informed of the decision to retract.

收回:[邱开义,刘鑫,刘杰,马洪波,李静雅,张正超,陈光亮,李才,变电站三维监控与防御技术研究,IET电路,器件与系统2022(https://doi.org/10.1049/cds2.12129)]。来自IET Circuits,Devices&;《系统》于2022年9月14日在威利在线图书馆(wileyonlinelibrary.com)在线出版,经主编Harry E.Ruda、工程与技术学会(IET)和John Wiley and Sons有限公司同意撤回。本文作为客座编辑特刊的一部分出版。经过调查,IET和该杂志确定,这篇文章没有按照该杂志的同行评审标准进行评审,有证据表明该特刊的同行评审过程受到了系统的操纵。因此,我们不能保证内容的完整性或可靠性。因此,我们决定收回这篇文章。提交人已被告知撤回的决定。
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引用次数: 0
A novel buffering fault-tolerance approach for network on chip (NoC) 一种新的片上网络缓冲容错方法
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-08-26 DOI: 10.1049/cds2.12127
Nima Jafarzadeh, Ahmad Jalili, Jafar A. Alzubi, Khosro Rezaee, Yang Liu, Mehdi Gheisari, Bahram Sadeghi Bigham, Amir Javadpour

Network-on-Chip (NoC) is a key component in chip multiprocessors (CMPs) as it supports communication between many cores. NoC is a network-based communication subsystem on an integrated circuit, most typically between modules in a system on a chip (SoC). Designing a reliable NoC against failures that can prevent failure using some measures or preventing error or system failure while failure happens and proper performance became a significant concern. For a reliable design against failures, first, the system should be analysed to discover the critical points. Hence, in this research, it is tried first to investigate the scale of fault tolerance effect on the mechanism in the router on the network by injecting simulated errors, and then these errors are prevented. As the major novelty, the authors implemented a router on a synchronised network and calculated the network buffering fault tolerance by injecting error in the buffer. Specifically, a new method for improving fault tolerance is proposed, which uses the existing resources efficiently. So, it does not impose any overhead on hardware and improves the error tolerance scale. The authors also evaluate it from different perspectives to show its superior performance.

片上网络(NoC)是芯片多处理器(CMPs)中的一个关键组件,因为它支持多核之间的通信。NoC是集成电路上基于网络的通信子系统,最典型的是在片上系统(SoC)中的模块之间。针对故障设计一个可靠的NoC,可以使用一些措施来防止故障,或者在故障发生时防止错误或系统故障,并确保适当的性能,这成为一个重要的问题。为了进行可靠的故障设计,首先,应分析系统以发现关键点。因此,在本研究中,首先试图通过注入模拟误差来研究网络上路由器中的容错机制的影响程度,然后防止这些误差。作为主要的创新,作者在同步网络上实现了一个路由器,并通过在缓冲区中注入误差来计算网络缓冲区的容错能力。具体地,提出了一种提高容错性的新方法,该方法有效地利用了现有的资源。因此,它不会对硬件造成任何开销,并提高了容错率。作者还从不同的角度对其进行了评价,以展示其卓越的性能。
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引用次数: 3
Challenges and solutions of working under threshold supply-voltage, for CNTFET-based SRAM-bitcell 基于cntfet的sram位单元在阈值供电电压下工作的挑战与解决方案
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-08-15 DOI: 10.1049/cds2.12126
Salimeh Shahrabadi

Recently, several studies were done on SRAM bitcells at different supply-voltages; upper, near or lower to threshold voltage. To the best of the author's knowledge, none of them discussed at threshold supply-voltage with proper subthreshold operations and Nano/Pico power-dissipations, hence this paper decides to investigate challenges and solutions of designing at VDD ${mathbf{V}}_{mathbf{D}mathbf{D}}$ =  Vth ${mathbf{V}}_{mathbf{t}mathbf{h}}$, because this voltage will lead to having lower power consumptions. This research applies power-gating technique to adjust VDD ${mathbf{V}}_{mathbf{D}mathbf{D}}$ on Vth ${mathbf{V}}_{mathbf{t}mathbf{h}}$, and also utilises output-inverter to set Logic 1 at VDD ${mathbf{V}}_{mathbf{D}mathbf{D}}$. Although ‘power-gating’ and ‘output-inverter’ were used in other works, this study renders specific points about them. In fact, the ability of power-gating technique in adjusting V
近年来,对不同电源电压下的SRAM位单元进行了研究;高于、接近或低于阈值电压。据笔者所知,它们都没有在阈值电源电压下讨论适当的亚阈值操作和纳/皮功耗。因此,本文决定研究在V D D ${mathbf{V}}_{mathbf{D}mathbf{D}}$ = V处设计的挑战和解决方案th ${mathbf{V}}_{mathbf{t}mathbf{h}}$,因为这个电压会导致更低的功耗。本研究采用功率门控技术调节V D D ${mathbf{V}}_{mathbf{D}mathbf{D}}$对V t的影响h ${mathbf{V}}_{mathbf{t}mathbf{h}}$,并利用输出逆变器将逻辑1设置为V D D ${mathbf{V}}_{mathbf{D}mathbf{D}}$。虽然“功率门控”和“输出逆变器”在其他工作中被使用,但本研究对它们提出了具体的观点。事实上,功率门控技术在V t上调节V D D ${mathbf{V}}_{mathbf{D}mathbf{D}}$的能力h ${mathbf{V}}_{mathbf{t}mathbf{h}}$在bitcell操作中没有任何不稳定性,以及,在读路径中使用输出逆变器将Logic-1设置为V D D ${mathbf{V}}_{mathbf{D}mathbf{D}}$。它还提出SNM%作为一个有用的价值数字。这项研究的目的不是为bitcell提供新的电路,而是研究在“V D D = V t h”下工作的挑战和解决方案${mathbf{V}}_{mathbf{D}mathbf{D}}={mathbf{V}}_{mathbf{t}mathbf{h}}$ ',这些解决方案可以产生最优的位元。
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引用次数: 0
Design and optimisation of high-efficient class-F ULP-PA using envelope tracking supply bias control for long-range low power wireless local area network IEEE 802.11ah standard using 65 nm CMOS technology 采用65纳米CMOS技术的远程低功耗无线局域网IEEE 802.11ah标准,采用包络跟踪供电偏置控制的高效f类ULP-PA设计与优化
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-07-18 DOI: 10.1049/cds2.12125
Muhammad Ovais Akhter, Najam Muhammad Amin, Razia Zia

This article presents the design and optimisation of a sub-1 GHz class-F ultra-low power (ULP) power amplifier (PA) in 65 nm Complementary Metal Oxide Semiconductor (CMOS) technology. An envelope tracking (ET) supply biasing technique is adopted to improve the efficiency of class-F PA. The ET consist of a pre-amp right before the detector in order to enhance the efficiency and save adequate amount of dc power consumption. The PA consists of two cascode cells terminated as class-F with gate-to-drain feedback in order to enhance linearity and limit any harmonic component from the input signal. The novel design consumes a dc power of 3.75 mW, power added efficiency of 37.1%, operating at 915–925 MHz unlicensed band and total saturated output power of 22 dBm including 14 dBm power gain at PA, which qualifies under long-range low power wireless local area network IEEE 802.11ah standard. The inductor-less design for ET supply bias reduces the chip layout size to 0.13 mm2 only.

本文介绍了一种基于65纳米互补金属氧化物半导体(CMOS)技术的sub-1 GHz f类超低功耗(ULP)功率放大器(PA)的设计与优化。采用包络跟踪(ET)电源偏置技术提高了fpa的效率。为了提高效率和节省足够的直流功耗,ET在检测器的正前方有一个前置放大器。PA由两个级联单元组成,端接为f类,具有门漏反馈,以增强线性度并限制输入信号的任何谐波成分。该设计的直流功耗为3.75 mW,功率增加效率为37.1%,工作在915 ~ 925 MHz无授权频段,总饱和输出功率为22 dBm,其中PA功率增益为14 dBm,符合IEEE 802.11ah远程低功耗无线局域网标准。用于ET电源偏置的无电感设计将芯片布局尺寸减小到仅0.13 mm2。
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引用次数: 1
Methods of solving in-band ripples and out-of-band suppression for yarn tension sensor based on surface acoustic wave 基于表面声波的纱线张力传感器带内波纹的求解和带外抑制方法
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-15 DOI: 10.1049/cds2.12121
Yang Feng, Jun Li, Ru Bai, Zhenghong Qian

The two key problems of the in-band ripples and out-of-band suppression are proposed in the design of the SAW yarn tension sensor and the methods of decreasing them are achieved. The unbalanced split-electrode interdigital transducers (IDT) are designed so that the total phase of the regenerated reflection wave and mass load feedback is close to 180°, leading to an effective reduction of the in-band ripples effect characterised by the sensor frequency response. The engraved bi-directional slots on the back of the substrate can block the propagation path of the bulk acoustic wave (BAW) to a certain extent, reducing the influence of BAW propagation and suppressing the out-of-band suppression of the frequency response. The experimental results show that the SAW yarn tension sensor with the unbalanced split-electrode IDT can reduce the in-band ripples from 23.34 to 0.93 dB, and the engraved bi-directional slots can suppress the out-of-band suppression from 28.03 to 7.71 dB.

提出了SAW纱线张力传感器设计中存在的带内波纹和带外波纹抑制两个关键问题,并给出了减小带内波纹和带外波纹的方法。设计了不平衡分裂电极数字间换能器(IDT),使再生反射波和质量负载反馈的总相位接近180°,从而有效地降低了以传感器频率响应为特征的带内波纹效应。基板背面刻蚀的双向槽可以在一定程度上阻挡体声波(BAW)的传播路径,降低了BAW传播的影响,抑制了频率响应的带外抑制。实验结果表明,采用非平衡分裂电极IDT的SAW纱线张力传感器可以将带内波纹从23.34减小到0.93 dB,双向刻痕槽可以抑制带外波纹从28.03减小到7.71 dB。
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引用次数: 2
A 1–5 GHz 22 mW receiver frontend with active-feedback baseband and voltage-commutating mixers in 65 nm CMOS 1 - 5ghz 22mw接收器前端,主动反馈基带和电压换流混频器,65nm CMOS
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-15 DOI: 10.1049/cds2.12124
Benqing Guo, Haishi Wang, Huifen Wang, Lei Li, Wanting Zhou, Kianoosh Jalali

A CMOS baseband-active-feedback receiver frontend with passive voltage-commutating mixers is proposed. The active feedback baseband enables in-band signal amplification and out-of-band blocker interference suppression by constructing the RF bandpass filter and BB lowpass filter, simultaneously. The voltage-commutating mixers embedded in current mirrors significantly reduce the power requirement for the LO generator. The stacked n/pMOS structure is commonly adopted to further improve power efficiency. The receiver frontend is designed in a standard 65 nm CMOS process. Simulation results display an NF of 3.4 dB and a maximum gain of 32 dB from 1 to 5 GHz LO frequency range. The obtained in-band and out-of-band IIP3 are −12 dBm and 9 dBm, respectively. The receiver frontend core only consumes 22 mW at 1 GHz LO frequency and occupies the area of 645 × 543 μm2, which is suitable for the low-power application of handheld terminals.

提出了一种带无源电压换流混频器的CMOS基带有源反馈接收机前端。有源反馈基带通过同时构建RF带通滤波器和BB低通滤波器实现带内信号放大和带外阻断器干扰抑制。嵌入电流镜的电压整流混频器显著降低了本LO发生器的功率要求。为了进一步提高功率效率,通常采用堆叠n/pMOS结构。接收器前端采用标准65nm CMOS工艺设计。仿真结果表明,在1 ~ 5 GHz本端频率范围内,该滤波器的NF值为3.4 dB,最大增益为32 dB。得到的带内IIP3为−12dbm,带外IIP3为9dbm。接收机前端核心在1ghz本端频率下的功耗仅为22mw,占地面积为645 × 543 μm2,适合手持终端的低功耗应用。
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引用次数: 6
A 5.5–7.5-GHz band-configurable wake-up receiver fully integrated in 45-nm RF-SOI CMOS 5.5 - 7.5 ghz波段可配置唤醒接收器,完全集成在45nm RF-SOI CMOS中
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-09 DOI: 10.1049/cds2.12123
Rui Ma, Florian Protze, Frank Ellinger

This work investigates a 5.5–7.5-GHz band-configurable duty-cycled wake-up receiver (WuRX) fully implemented in a 45-nm radio-frequency (RF) silicon-on-insulator (SOI) complementary-metal-oxide-semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super-heterodyne receiver (RX) topology, the WuRX analogue front-end (AFE) incorporates a 5.5–7.5-GHz band-tunable low-power low-noise amplifier, a low-power Gilbert mixer, a digitally controlled oscillator (DCO), a 100-MHz IF band-pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. By application of duty cycling with a low duty cycle below 1%, the power consumption of the AFE was significantly reduced. In addition, the on-chip digital bank-end consists of a frequency divider, a phase corrector, a 31-bit correlator and a serial peripheral interface. A proof-of-concept WuRX circuit occupying an area of 1200 μm by 900 μm has been fabricated in a GlobalFoundries 45-nm RF-SOI CMOS technology. Measurement results show that at a data rate of 64 bps, the entire WuRX consumes only 2.3 μW. Tested at 8 operation bands covering 5.5–7.7 GHz, the WuRX has a measured sensitivity between −67.5 dBm and −72.4 dBm at a wake-up error rate of 10−3. With the sensitivity unchanged, the data rate of the WuRX can be scaled up to 8.2 kbps. To the authors' best knowledge, this work offers the largest RF bandwidth from 5.5 to 7.5 GHz, the most operation channels (≥8) and the fastest settling time (<115 ns) among the WuRXs reported to date.

本研究研究了一种5.5 - 7.5 ghz波段可配置的占空比唤醒接收器(WuRX),该接收器完全实现在45纳米射频(RF)绝缘体上硅(SOI)互补金属氧化物半导体(CMOS)技术中。基于不确定中频(IF)超外差接收机(RX)拓扑结构,WuRX模拟前端(AFE)包含一个5.5 - 7.5 ghz带可调谐低功率低噪声放大器、一个低功率吉尔伯特混频器、一个数字控制振荡器(DCO)、一个100 mhz中频带通滤波器(BPF)、一个包络检测器、一个比较器、一个脉冲发生器和一个电流基准。采用占空比小于1%的低占空比,显著降低了AFE的功耗。此外,片上数字银行端由分频器、相位校正器、31位相关器和串行外设接口组成。采用GlobalFoundries的45纳米RF-SOI CMOS技术制造了面积为1200 μm × 900 μm的概念验证型WuRX电路。测量结果表明,在数据速率为64bps时,整个WuRX的功耗仅为2.3 μW。在覆盖5.5-7.7 GHz的8个工作频段上进行测试,WuRX的测量灵敏度在- 67.5 dBm至- 72.4 dBm之间,唤醒错误率为10 - 3。在灵敏度不变的情况下,WuRX的数据速率可以扩展到8.2 kbps。据作者所知,这项工作提供了迄今为止报道的wurx中最大的RF带宽从5.5到7.5 GHz,最多的操作通道(≥8)和最快的建立时间(<115 ns)。
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引用次数: 0
Design of a multi-mode digital pixel with conversion data protection 带转换数据保护的多模数字像素的设计
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-07 DOI: 10.1049/cds2.12122
Yan-Hua Ma, Xiang-He Kong, Yu-Chun Chang

With the development of semiconductor technology, digital pixel has received widespread attention and is applied to various electronic products. However, due to the limitation of area, it forms a challenging task to design a digital pixel with multiple modes. In this paper, a pulse width modulation based digital pixel is proposed, which is compatible with five different modes. By using the multi-purpose capacitors and static random access memory structure, it can realise multi-mode conversion in an equivalent area to that of the single mode digital pixel without performance degradation. Furthermore, a corresponding logic control method is developed, such that the integrity of the frame data is ensured during mode conversion. The simulation result of our proposed digital pixel in Tower Jazz 0.18 μm process shows that in the bright field it achieves a dynamic range of 67 dB. In the dark field, it achieves a conversion gain up to 13.91 μV/e−, with input noise of 37.89 e−per pixel after correlated double sampling.

随着半导体技术的发展,数字像素受到了广泛的关注,并应用于各种电子产品中。然而,由于面积的限制,设计具有多种模式的数字像素是一项具有挑战性的任务。本文提出了一种基于脉冲宽度调制的数字像素,可兼容五种不同的模式。通过使用多用途电容和静态随机存取存储器结构,可以在与单模数字像素相当的面积内实现多模转换,而不会降低性能。在此基础上,提出了相应的逻辑控制方法,保证了模式转换过程中帧数据的完整性。本文提出的数字像素在Tower Jazz 0.18 μm工艺中的仿真结果表明,在明亮场中,它的动态范围达到67 dB。在暗场中,经过相关双采样后的转换增益可达13.91 μV/e−,输入噪声为37.89 e−/像素。
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引用次数: 0
A novel design of a silicon PIN diode for increasing the breakdown voltage 一种提高击穿电压的新型硅PIN二极管设计
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-06 DOI: 10.1049/cds2.12120
Farzaneh Rezaei, Fatemeh Dehghan Nayeri, Adel Rezaeian

This paper presents a new structure consisting of a silicon PIN junction with high breakdown voltage and low dark current with two Guard rings. To achieve the optimal structure, the effect of the parameters on the breakdown voltage and the dark current of the device has been investigated and simulated. The intrinsic thickness and impurity, the penetration depth of the active area and guard rings, location and number of guard rings, thickness, and distance between guard rings are the effective parameters of the device's breakdown voltage and dark current. In the proposed structure by placing two guard rings around the active area, the results show that an electric field is distributed at the edge of the active area between the guard rings, which leads to an increase of 292.62 V in breakdown voltage compared to the device without a guard ring.

本文提出了一种由高击穿电压、低暗电流的硅PIN结和两个保护环组成的新结构。为了实现最优结构,研究并模拟了各参数对器件击穿电压和暗电流的影响。本征厚度和杂质、有源区和保护环的穿透深度、保护环的位置和数量、厚度和保护环之间的距离是器件击穿电压和暗电流的有效参数。结果表明,在有源区周围放置两个保护环的结构中,保护环之间在有源区边缘处分布了电场,使得击穿电压比没有保护环的器件提高了292.62 V。
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引用次数: 1
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