Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/p04028
B. Cline, D. Banks, S. Bell, I. Church, A. Davis, T. Gardiner, J. Harris, M. Hart, L. Jones, T. Nicholls, J. Nobes, S. Pradeep, M. Roberts, D. Sole, M. C. Veale, M. Wilson, V. Dhamgaye, O. Fox, K. Sawhney
In this paper, results are presented from the characterisation of Redlen Technologies high-flux-capable Cadmium Zinc Telluride (HF-CZT) hybridised to the HEXITECMHz ASIC, a novel 1 MHz continuous X-ray imaging system. A 2 mm thick HF-CZT HEXITECMHz detector was characterised on the B16 Test Beamline at the Diamond Light Source and displayed an average FWHM of 850 eV for monochromatic X-rays of energy 20 keV. Measurements revealed a shift in the baseline of irradiated pixels that results in a movement of the entire spectrum to higher ADU values. Datasets taken to analyse the effect's dynamics showed it to be highly localised and flux-dependent, with the excess leakage current generated equivalent to per-pixel shifts of ∼ 543 pA (8.68 nA mm-2) at a flux of 1.26×107 ph s-1 mm-2. Comparison to results from a p-type Si HEXITECMHz device indicate this `excess leakage-current' effect is unique to HF-CZT and it is hypothesised that it originates from trapping at the electrode-CZT interface and a temporary modification of the potential barrier between the CZT and metal electrode.
{"title":"Characterisation of Redlen HF-CdZnTe at > 106 ph s-1 mm-2 using HEXITECMHz","authors":"B. Cline, D. Banks, S. Bell, I. Church, A. Davis, T. Gardiner, J. Harris, M. Hart, L. Jones, T. Nicholls, J. Nobes, S. Pradeep, M. Roberts, D. Sole, M. C. Veale, M. Wilson, V. Dhamgaye, O. Fox, K. Sawhney","doi":"10.1088/1748-0221/19/04/p04028","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/p04028","url":null,"abstract":"\u0000 In this paper, results are presented from the\u0000 characterisation of Redlen Technologies high-flux-capable Cadmium\u0000 Zinc Telluride (HF-CZT) hybridised to the HEXITECMHz \u0000 ASIC, a novel 1 MHz continuous X-ray imaging system. A 2 mm thick\u0000 HF-CZT HEXITECMHz detector was characterised on the B16\u0000 Test Beamline at the Diamond Light Source and displayed an average\u0000 FWHM of 850 eV for monochromatic X-rays of energy\u0000 20 keV. Measurements revealed a shift in the baseline of\u0000 irradiated pixels that results in a movement of the entire spectrum\u0000 to higher ADU values. Datasets taken to analyse the effect's\u0000 dynamics showed it to be highly localised and flux-dependent, with\u0000 the excess leakage current generated equivalent to per-pixel shifts\u0000 of ∼ 543 pA (8.68 nA mm-2) at a flux of\u0000 1.26×107 ph s-1 mm-2. Comparison to results\u0000 from a p-type Si HEXITECMHz device indicate this `excess\u0000 leakage-current' effect is unique to HF-CZT and it is hypothesised\u0000 that it originates from trapping at the electrode-CZT interface and\u0000 a temporary modification of the potential barrier between the CZT\u0000 and metal electrode.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140771176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04052
M. Kovacs, M. Abbas, I. Ahmed, G. Blanchot, A. Honma, A. La Rosa, I. Mateos Domínguez, K. Klein, M. Mohammadi Najafabadi, K. Schleidweiler, P. Szydlik, A. Zografos
The CMS Tracker Phase-2 Upgrade requires the production of new sensor modules to cope with the requirements of the HL-LHC. The two main building blocks of the Outer Tracker are the Strip-Strip and Pixel-Strip modules. All-together 47'520 hybrid circuits will be produced to construct 8'000 Strip-Strip and 5'880 Pixel-Strip modules. The circuit designs for the mass production were fine-tuned and kick-off batches were manufactured to verify the latest changes in the designs before the series production. This contribution focuses on lessons learned from the prototyping stage, design optimization details for the mass production as well as test results and production yield from the kick-off batches.
{"title":"Hybrid designs and kick-off batch production experience for the CMS Phase-2 Upgrade","authors":"M. Kovacs, M. Abbas, I. Ahmed, G. Blanchot, A. Honma, A. La Rosa, I. Mateos Domínguez, K. Klein, M. Mohammadi Najafabadi, K. Schleidweiler, P. Szydlik, A. Zografos","doi":"10.1088/1748-0221/19/04/c04052","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04052","url":null,"abstract":"\u0000 The CMS Tracker Phase-2 Upgrade requires the production of new sensor modules to cope with the requirements of the HL-LHC. The two main building blocks of the Outer Tracker are the Strip-Strip and Pixel-Strip modules. All-together 47'520 hybrid circuits will be produced to construct 8'000 Strip-Strip and 5'880 Pixel-Strip modules. The circuit designs for the mass production were fine-tuned and kick-off batches were manufactured to verify the latest changes in the designs before the series production. This contribution focuses on lessons learned from the prototyping stage, design optimization details for the mass production as well as test results and production yield from the kick-off batches.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140771748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04048
D. Hernandez Montesinos, S. Baron, S. Biereigel, P. Hazell, S. Kulis, P. Vicente Leitao, P. Moreira, D. Porret, K. Wyllie
The Low-Power Gigabit Transceiver (lpGBT) is a radiation-tolerant ASIC used in high-energy physics experiments for multipurpose high-speed bidirectional serial links. Around 200,000 chips have been tested with a production test system capable of exercising the majority of the ASIC functionality to ensure its correct operation. Furthermore, specific individual qualification tests were carried out beyond the production tester limits, including radiation, multi-drop bus topology, inter-chip communication through different types of electrical links and characterization of jitter and stability of the recovered clocks. In this article, an overview of the production and qualification tests is given together with their results demonstrating the robustness and flexibility of the lpGBT.
{"title":"Overview of the production and qualification tests of the lpGBT","authors":"D. Hernandez Montesinos, S. Baron, S. Biereigel, P. Hazell, S. Kulis, P. Vicente Leitao, P. Moreira, D. Porret, K. Wyllie","doi":"10.1088/1748-0221/19/04/c04048","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04048","url":null,"abstract":"\u0000 The Low-Power Gigabit Transceiver (lpGBT) is a radiation-tolerant ASIC used in high-energy physics experiments for multipurpose high-speed bidirectional serial links. Around 200,000 chips have been tested with a production test system capable of exercising the majority of the ASIC functionality to ensure its correct operation.\u0000Furthermore, specific individual qualification tests were carried out beyond the production tester limits, including radiation, multi-drop bus topology, inter-chip communication through different types of electrical links and characterization of jitter and stability of the recovered clocks.\u0000In this article, an overview of the production and qualification tests is given together with their results demonstrating the robustness and flexibility of the lpGBT.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140774580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/t04001
F. Lin, R. Xie, Huiying Li, Shuaibin Liu, T. Hu, Z. Fan, Yixiang Mo, Shuai Yuan, Jiale Sun, Haibo Yi, Zhipeng Liu, Jiulin Wu, Jianfeng Tang, H. Yuan, Yanliang Tan
Radon (Rn-222) is the main source of radiation exposure to human beings from natural radiation; it is of great significance to study the measuring methods and measuring instruments of radon for natural radiation protection. In recent years, the application of pixel detectors in radiation detection has attracted attention. In this paper, a Commercial Off-the-Shelf Complementary Metal Oxide Semiconductor (COTS CMOS) image sensor which replaces the glass for protection covering in front of the sensors was used to perform a series of measurements to identify alpha particles. During the experiment, the CMOS image sensor was used to record a video during the sampling period, and then use the FFmpeg software to take screenshots of the video by frame. MATLAB was used to count bright spots from the image frames. A measurement chamber was designed to measure radon concentrations, and when the relative humidity was constant, the count of alpha particles by the CMOS image sensor increased along with the increase of the concentration. The experiments verified the feasibility of the low-cost COTS CMOS image sensors to monitor radon.
{"title":"Counting alpha particles produced by radon daughters using commercial off-the-shelf complementary metal oxide semiconductor (COTS CMOS) image sensors","authors":"F. Lin, R. Xie, Huiying Li, Shuaibin Liu, T. Hu, Z. Fan, Yixiang Mo, Shuai Yuan, Jiale Sun, Haibo Yi, Zhipeng Liu, Jiulin Wu, Jianfeng Tang, H. Yuan, Yanliang Tan","doi":"10.1088/1748-0221/19/04/t04001","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/t04001","url":null,"abstract":"\u0000 Radon (Rn-222) is the main source of radiation exposure to\u0000 human beings from natural radiation; it is of great significance to\u0000 study the measuring methods and measuring instruments of radon for\u0000 natural radiation protection. In recent years, the application of\u0000 pixel detectors in radiation detection has attracted attention. In\u0000 this paper, a Commercial Off-the-Shelf Complementary Metal Oxide\u0000 Semiconductor (COTS CMOS) image sensor which replaces the glass for\u0000 protection covering in front of the sensors was used to perform a\u0000 series of measurements to identify alpha particles. During the\u0000 experiment, the CMOS image sensor was used to record a video during\u0000 the sampling period, and then use the FFmpeg software to take\u0000 screenshots of the video by frame. MATLAB was used to count bright\u0000 spots from the image frames. A measurement chamber was designed to\u0000 measure radon concentrations, and when the relative humidity was\u0000 constant, the count of alpha particles by the CMOS image sensor\u0000 increased along with the increase of the concentration. The\u0000 experiments verified the feasibility of the low-cost COTS CMOS image\u0000 sensors to monitor radon.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140780440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04034
X. Wen, T. Fu, D. Gong, X. Huang, T. Liu, P. Gui, J. Wu
A very low power discriminator circuit for pixelized detectors, called the Pseudo-Thyristor is described in this document. It is a positive feedback topology using regular PMOS and NMOS field-effect transistors (FET's) with zero static current. When a small charge is injected into the circuit, it flips rapidly due to the positive feedback and outputs a logic transition for further digitization. Simulation shows that in a 65 nm process, it is possible to achieve a detecting threshold below 5 fC while maintain the average power consumption below 10 micro-Watts when the hit occupancy is <10% for 40 MHz operation.
{"title":"The CMOS Pseudo-Thyristor: a zero-static current discriminator circuit","authors":"X. Wen, T. Fu, D. Gong, X. Huang, T. Liu, P. Gui, J. Wu","doi":"10.1088/1748-0221/19/04/c04034","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04034","url":null,"abstract":"\u0000 A very low power discriminator circuit for pixelized detectors, called the Pseudo-Thyristor is described in this document. It is a positive feedback topology using regular PMOS and NMOS field-effect transistors (FET's) with zero static current. When a small charge is injected into the circuit, it flips rapidly due to the positive feedback and outputs a logic transition for further digitization. Simulation shows that in a 65 nm process, it is possible to achieve a detecting threshold below 5 fC while maintain the average power consumption below 10 micro-Watts when the hit occupancy is <10% for 40 MHz operation.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140781702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04031
K. Hayashi, K. Hoshino, K. Miyamoto, A. Hatayama, J. Lettry
In order to extract intense ion beams with good beam optics from hydrogen negative ion sources, it is important to control the shape of the plasma meniscus (i.e. beam emission surface). Recently, it is suggested experimentally that the degradation of beam optics in the RF negative ion sources may be due to the fluctuation of the distance d eff between the meniscus and the extraction grid caused by the fluctuation of the plasma density np . The purpose of this study is to make clear the dependence of d eff on np in the presence of a large amount of surface produced H- ions in order to understand such fluctuation of beam optics in RF sources For the purpose, 3D electrostatic PIC simulation was conducted taking the bulk plasma density as a parameter, investigating the extraction region of a H- ion source. A large amount of the surface H- production on the PG has been taken into account under the assumption that the H- production rate is proportional to the bulk plasma density. The result shows that the effective distance d eff is proportional to np -1/2 even for a large amount of surface H- production. This dependence suggests that the bulk plasma density np is the key parameters to control d eff and the resultant beam optics extracted from the negative ion source.
为了从氢负离子源中提取具有良好光束光学性能的强离子束，控制等离子体半月板（即光束发射面）的形状非常重要。最近的实验表明，射频负离子源的光束光学性能下降可能是由于等离子体密度 np 的波动引起的半月板与萃取网格之间距离 d eff 的波动造成的。本研究的目的是明确在存在大量表面产生的 H- 离子时 d eff 与 np 的关系，以了解射频负离子源中光束光学的这种波动。在 H- 生成率与大体等离子体密度成正比的假设下，考虑了 PG 上大量的表面 H- 生成。结果表明，即使在大量表面 H- 产生的情况下，有效距离 d eff 也与 np -1/2 成正比。这种依赖关系表明，主体等离子体密度 np 是控制 d eff 和从负离子源提取的光束光学结果的关键参数。
{"title":"Numerical study of the plasma meniscus shape and beam optics in RF negative ion sources","authors":"K. Hayashi, K. Hoshino, K. Miyamoto, A. Hatayama, J. Lettry","doi":"10.1088/1748-0221/19/04/c04031","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04031","url":null,"abstract":"\u0000 In order to extract intense ion beams with good beam optics from hydrogen negative ion\u0000 sources, it is important to control the shape of the plasma meniscus (i.e. beam emission\u0000 surface). Recently, it is suggested experimentally that the degradation of beam optics in the RF\u0000 negative ion sources may be due to the fluctuation of the distance d\u0000 eff between the meniscus\u0000 and the extraction grid caused by the fluctuation of the plasma density np\u0000 . The purpose of\u0000 this study is to make clear the dependence of d\u0000 eff on np\u0000 in the presence of a\u0000 large amount of surface produced H- ions in order to understand such fluctuation of beam\u0000 optics in RF sources For the purpose, 3D electrostatic PIC simulation was conducted taking the\u0000 bulk plasma density as a parameter, investigating the extraction region of a H- ion source. A\u0000 large amount of the surface H- production on the PG has been taken into account under the\u0000 assumption that the H- production rate is proportional to the bulk plasma density. The result\u0000 shows that the effective distance d\u0000 eff is proportional to np\u0000 \u0000 -1/2 even for a\u0000 large amount of surface H- production. This dependence suggests that the bulk plasma density\u0000 np\u0000 is the key parameters to control d\u0000 eff and the resultant beam optics extracted from\u0000 the negative ion source.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140782924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04053
Grzegorz Węgrzyn, Robert Szczygieł
We present the implementation of the indirect voltage measurement using a noise distribution algorithm [1] in the prototype application-specific integrated circuit (ASIC) SMAUG_ND_1 designed in CMOS 28 nm technology. The chip implements the matrix of 7×7 pixels with the size of 68×68 μm. Each pixel contains eight independent comparators implementing the described algorithm and optional correlated-double-sampling method. The paper describes the ASIC architecture and briefly presents preliminary test results and encountered problems.
{"title":"Design and measurements of SMAUG1, a prototype ASIC for voltage measurement using noise distribution","authors":"Grzegorz Węgrzyn, Robert Szczygieł","doi":"10.1088/1748-0221/19/04/c04053","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04053","url":null,"abstract":"\u0000 We present the implementation of the indirect voltage measurement using a noise distribution algorithm [1] in the prototype application-specific integrated circuit (ASIC) SMAUG_ND_1 designed in CMOS 28 nm technology. The chip implements the matrix of 7×7 pixels with the size of 68×68 μm. Each pixel contains eight independent comparators implementing the described algorithm and optional correlated-double-sampling method. The paper describes the ASIC architecture and briefly presents preliminary test results and encountered problems.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140789021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04012
S. A. Mkhitaryan, H.G. Margaryan, M. Vasilyan, H. Drmeyan
An X-ray monolithic 4-block interference system has been developed and manufactured, in which the first 3 blocks are thin and form a 3- block Laue interferometer with disrupted geometry, and the 4th additional block is thick and is in the reflection position. It is shown that fine structures of interference patterns registered from 3-block interferometers with thin blocks and distorted geometry are observed in cases where an additional 4th thick block is used. The calculations show that when the ideal geometry of a 3-block interferometer is violated, an interference pattern is formed in the form of families of parallel stripes (lines) on the recording plate lying perpendicular to the incident beam. The coordinates of the interference stripes maxima, their periods, as well as the coefficient of a linear enlargement in the presence and absence of the 4th thick block, are calculated. It has been experimentally proven that a thick block does not introduce new information into the interference pattern, but will only enlarge its dimensions in the scattering plane. The limits for reducing the period of interference stripes and their complete disappearance are determined depending on the size of violations from the ideal geometry of a 3-block interferometer.
{"title":"On an X-ray 3-block Laue-interferometer with violation of ideal geometry","authors":"S. A. Mkhitaryan, H.G. Margaryan, M. Vasilyan, H. Drmeyan","doi":"10.1088/1748-0221/19/04/c04012","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04012","url":null,"abstract":"\u0000 An X-ray monolithic 4-block interference system has been developed and manufactured, in which the first 3 blocks are thin and form a 3- block Laue interferometer with disrupted geometry, and the 4th additional block is thick and is in the reflection position. It is shown that fine structures of interference patterns registered from 3-block interferometers with thin blocks and distorted geometry are observed in cases where an additional 4th thick block is used. The calculations show that when the ideal geometry of a 3-block interferometer is violated, an interference pattern is formed in the form of families of parallel stripes (lines) on the recording plate lying perpendicular to the incident beam. The coordinates of the interference stripes maxima, their periods, as well as the coefficient of a linear enlargement in the presence and absence of the 4th thick block, are calculated. It has been experimentally proven that a thick block does not introduce new information into the interference pattern, but will only enlarge its dimensions in the scattering plane. The limits for reducing the period of interference stripes and their complete disappearance are determined depending on the size of violations from the ideal geometry of a 3-block interferometer.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140796005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04023
P. Perion, F. Arfelli, R. Menk, L. Brombal
Multiple energy bin spectral micro-CT (SμCT) is an advanced imaging technique that allows multi-material decomposition according to their specific absorption patterns at a sub-100 μm scale. Typically, iodine is the preferred CT contrast agent for cardiovascular imaging, while gold nanoparticles have gained attention in recent years owing to their high absorption properties, biocompatibility and ability to target tumors. In this work, we demonstrate the potential for multi-material decomposition through SμCT imaging of a test sample at the PEPI lab of INFN Trieste. The sample, consisting of gold, iodine, calcium, and water, was imaged using a Pixirad1/PixieIII chromatic detector with multiple energy thresholds and a wide spectrum (100 kV) produced by a micro-focus X-ray tube. The results demonstrate the simultaneous detection and separation of the four materials at a spatial scale of 35 μm, suggesting the potential of this technique in improving material detectability and quantification in a range of pre-clinical applications, including cardiovascular and oncologic imaging.
{"title":"Spectral micro-CT for simultaneous gold and iodine detection, and multi-material identification","authors":"P. Perion, F. Arfelli, R. Menk, L. Brombal","doi":"10.1088/1748-0221/19/04/c04023","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04023","url":null,"abstract":"\u0000 Multiple energy bin spectral micro-CT (SμCT) is an advanced imaging technique that allows multi-material decomposition according to their specific absorption patterns at a sub-100 μm scale. Typically, iodine is the preferred CT contrast agent for cardiovascular imaging, while gold nanoparticles have gained attention in recent years owing to their high absorption properties, biocompatibility and ability to target tumors.\u0000\u0000In this work, we demonstrate the potential for multi-material decomposition through SμCT imaging of a test sample at the PEPI lab of INFN Trieste. The sample, consisting of gold, iodine, calcium, and water, was imaged using a Pixirad1/PixieIII chromatic detector with multiple energy thresholds and a wide spectrum (100 kV) produced by a micro-focus X-ray tube. The results demonstrate the simultaneous detection and separation of the four materials at a spatial scale of 35 μm, suggesting the potential of this technique in improving material detectability and quantification in a range of pre-clinical applications, including cardiovascular and oncologic imaging.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140764788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04039
Y. Tian, W. Zhou, Q. Wang, X. Niu, W. Han, H. Yang, H. Zhang, S. Liao, X. Li, C. Zhao
This paper describes a silicon pixel sensor for non-interceptive real-time beam monitoring at heavy-ion accelerators. The total size of the sensor is 4 mm × 5 mm. It has 64 (row) × 120 (column) square pixels, each single of which is in the size of 40 μm × 40 μm. With the exposed sensing pad, this sensor can directly collect the charge in the media over the pixels. The in-pixel circuit mainly consists of a low-noise Charge Sensitive Amplifier (CSA) to establish the signal for the energy reconstruction and a discriminator with a Time-to-Amplitude Converter (TAC) for the Time of Arrival (TOA) measurement. The analog signal from each pixel is accessible through time-shared multiplexing over the entire pixel array. This paper will discuss the design of this IMPix-S1 sensor.
{"title":"A novel silicon pixel sensor for beam monitoring applications at heavy-ion accelerators","authors":"Y. Tian, W. Zhou, Q. Wang, X. Niu, W. Han, H. Yang, H. Zhang, S. Liao, X. Li, C. Zhao","doi":"10.1088/1748-0221/19/04/c04039","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04039","url":null,"abstract":"\u0000 This paper describes a silicon pixel sensor for non-interceptive real-time beam monitoring at heavy-ion accelerators. The total size of the sensor is 4 mm × 5 mm. It has 64 (row) × 120 (column) square pixels, each single of which is in the size of 40 μm × 40 μm. With the exposed sensing pad, this sensor can directly collect the charge in the media over the pixels. The in-pixel circuit mainly consists of a low-noise Charge Sensitive Amplifier (CSA) to establish the signal for the energy reconstruction and a discriminator with a Time-to-Amplitude Converter (TAC) for the Time of Arrival (TOA) measurement. The analog signal from each pixel is accessible through time-shared multiplexing over the entire pixel array. This paper will discuss the design of this IMPix-S1 sensor.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140777100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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