Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/p04021
Jie Kong, Xibo Zhou, Changxin Wang, Jinda Chen, Genyuan Liang, Chengming Du, Q. She, Yi Qian, Junwei Yan
This paper presents a heavy-ion in-beam PET, referred to as ibPET with a specifically custom designed data acquisition system, which was constructed and tested at the Heavy Ion Medical Machine (HIMM) beam-line, HICTC in Wuwei. The data acquisition system of ibPET has undergone several upgrades during the years, And its data processing capability now exceeds one million events per second per channel. To achieve optimal performance of the ibPET under existing conditions, we tested coincident events and noise equivalent count (NEC) under different time coincidence windows.The results show that the signal-to-noise ratio of the reconstructed image data reaches its peak when the time window is around 3 ns, indicating that the ibPET performance is optimal at this point. In order to determine the size of the time window, we measured the system's time resolution FWHM to be 1.63 ns, and ultimately chose a time window size of twice the time resolution FWHM, which is 3.25 ns. Meanwhile, we demonstrate the capability of our ibPET to monitor the dose range with various irradiation. The results demonstrate that the system exhibits the expected exponential decay in counting rate after irradiation, and accurately provides penetration depth positions at different energy levels.
{"title":"A dedicated in-beam PET system with a modular dual-head for radiotherapy imaging in HIMM","authors":"Jie Kong, Xibo Zhou, Changxin Wang, Jinda Chen, Genyuan Liang, Chengming Du, Q. She, Yi Qian, Junwei Yan","doi":"10.1088/1748-0221/19/04/p04021","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/p04021","url":null,"abstract":"\u0000 This paper presents a heavy-ion in-beam PET, referred to as ibPET with a specifically custom designed data acquisition system, which was constructed and tested at the Heavy Ion Medical Machine (HIMM) beam-line, HICTC in Wuwei. The data acquisition system of ibPET has undergone several upgrades during the years, And its data processing capability now exceeds one million events per second per channel. To achieve optimal performance of the ibPET under existing conditions, we tested coincident events and noise equivalent count (NEC) under different time coincidence windows.The results show that the signal-to-noise ratio of the reconstructed image data reaches its peak when the time window is around 3 ns, indicating that the ibPET performance is optimal at this point. In order to determine the size of the time window, we measured the system's time resolution FWHM to be 1.63 ns, and ultimately chose a time window size of twice the time resolution FWHM, which is 3.25 ns. Meanwhile, we demonstrate the capability of our ibPET to monitor the dose range with various irradiation. The results demonstrate that the system exhibits the expected exponential decay in counting rate after irradiation, and accurately provides penetration depth positions at different energy levels.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140759554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04009
J. Shao, X. Sun
This article offers an overview of the JUNO experiment, highlighting the specific requirements and challenges associated with the utilization of liquid scintillators. The paper concentrates on the development process of those ultra-pure liquid scintillators, as well as on the construction and commissioning status of the production plant. Preliminary results are presented, along with the future plans for the project. Furthermore, the potential applications of ultra-pure liquid scintillators are discussed.
{"title":"Ultra-pure liquid scintillators for JUNO and beyond","authors":"J. Shao, X. Sun","doi":"10.1088/1748-0221/19/04/c04009","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04009","url":null,"abstract":"\u0000 This article offers an overview of the JUNO experiment, highlighting the specific requirements and challenges associated with the utilization of liquid scintillators. The paper concentrates on the development process of those ultra-pure liquid scintillators, as well as on the construction and commissioning status of the production plant. Preliminary results are presented, along with the future plans for the project. Furthermore, the potential applications of ultra-pure liquid scintillators are discussed.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140764154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04030
R. Manera, R. Ballabriga, J. Mauricio, J. Kaplon, A. Paternò, F. Bandi, S. Gómez, A. Pulli, S. Portero, J. Silva, F. Keizer, C. D’Ambrosio, M. Campbell, D. Gascón
This work presents the analog circuitry of the FastRICH ASIC, a 16-channel ASIC, developed in a 65 nm CMOS technology specifically designed for the RICH detector at LHCb to readout detectors like Photomultiplier Tubes to be used at the LHC Run 4 and Silicon Photomultipliers candidates for Run 5. The front-end (FE) stage has an input impedance below 50 Ω and an input dynamic range from 5 μA to 5 mA with a power consumption of ∼5 mW/channel. The chip includes a Leading Edge Comparator (LED) and a Constant Fraction Discriminator (CFD) for time pick-off and a Time-to-Digital Converter (TDC) for digitization.
{"title":"The analog front end for FastRICH: an ASIC for the LHCb RICH detector upgrade","authors":"R. Manera, R. Ballabriga, J. Mauricio, J. Kaplon, A. Paternò, F. Bandi, S. Gómez, A. Pulli, S. Portero, J. Silva, F. Keizer, C. D’Ambrosio, M. Campbell, D. Gascón","doi":"10.1088/1748-0221/19/04/c04030","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04030","url":null,"abstract":"\u0000 This work presents the analog circuitry of the FastRICH ASIC, a 16-channel ASIC, developed\u0000 in a 65 nm CMOS technology specifically designed for the RICH detector at LHCb to readout\u0000 detectors like Photomultiplier Tubes to be used at the LHC Run 4 and Silicon Photomultipliers\u0000 candidates for Run 5. The front-end (FE) stage has an input impedance below 50 Ω and an\u0000 input dynamic range from 5 μA to 5 mA with a power consumption of ∼5 mW/channel. The chip\u0000 includes a Leading Edge Comparator (LED) and a Constant Fraction Discriminator (CFD) for time\u0000 pick-off and a Time-to-Digital Converter (TDC) for digitization.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140758020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/t04003
Shouyan Xu, Mingyang Huang, Liangsheng Huang, Yong Li, Li Rao, Sheng Wang
The design betatron tune of the Rapid Cycling Synchrotron (RCS) of China Spallation Neutron Source (CSNS) is (4.86, 4.80), which allows for incoherent tune shifts to avoid serious systematic betatron resonances. When the operational bare tune was set at the design value, serious beam instability in the horizontal plane and beam loss induced by half-integer resonance in the vertical plane under space charge detuning were observed. Simulations and experiments have shown that space charge-induced beam loss reduces as the tunes move up and away from half-integer resonance lines. However, experimental observations have shown that instability growth rates increase rapidly as the tune approaches integer from below. The tune requirements for reducing the beam loss caused by space charge effects and suppressing beam instability are different at the RCS of CSNS. The tunes over the whole acceleration process are optimized based on space charge effects and beam instability. The optimized tune pattern was able to well control the beam loss induced by space charge and beam instability. The beam power of CSNS achieved the design value of 100 kW with small beam loss.
{"title":"Tune optimization for alleviating space charge effects and suppressing beam instability at the RCS of CSNS","authors":"Shouyan Xu, Mingyang Huang, Liangsheng Huang, Yong Li, Li Rao, Sheng Wang","doi":"10.1088/1748-0221/19/04/t04003","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/t04003","url":null,"abstract":"\u0000 The design betatron tune of the Rapid Cycling Synchrotron\u0000 (RCS) of China Spallation Neutron Source (CSNS) is (4.86, 4.80),\u0000 which allows for incoherent tune shifts to avoid serious systematic\u0000 betatron resonances. When the operational bare tune was set at the\u0000 design value, serious beam instability in the horizontal plane and\u0000 beam loss induced by half-integer resonance in the vertical plane\u0000 under space charge detuning were observed. Simulations and\u0000 experiments have shown that space charge-induced beam loss reduces\u0000 as the tunes move up and away from half-integer resonance\u0000 lines. However, experimental observations have shown that\u0000 instability growth rates increase rapidly as the tune approaches\u0000 integer from below. The tune requirements for reducing the beam loss\u0000 caused by space charge effects and suppressing beam instability are\u0000 different at the RCS of CSNS. The tunes over the whole acceleration\u0000 process are optimized based on space charge effects and beam\u0000 instability. The optimized tune pattern was able to well control the\u0000 beam loss induced by space charge and beam instability. The beam\u0000 power of CSNS achieved the design value of 100 kW with small beam\u0000 loss.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140759121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/p04025
J. Beavers, K. Huddleston, N. Hines, W. McNeil
Spectroscopic scintillation detector form factors have been guided primarily by the design of commercially available photonic sensors. These devices, such as photomultiplier tubes, silicon photomultipliers, and hybrid photodetectors have underperformed in one or more areas such as size, power consumption, and resolution. A novel photomultiplier tube having a 50.8×152.4 mm2 rectangular window, utilizing a reflection-mode photocathode, and a low-gain, miniaturized dynode set is considered here to improve photosensor packaging while enabling high-efficiency, low-resolution scintillation spectroscopy with large, planar scintillators. Using a phenomenological multiphysics simulation process informed by empirical data, photoelectron collection efficiency, single-photoelectron response, electron transit time, and transit time spread have been modeled over a range of operating potentials. At 750 V between the photocathode and anode, 72.5% of photoelectrons are collected at the first dynode, and the average gain is estimated to be 805. The most probable transit time is 14.9 ns, with a transit time spread of 2.7 ns full-width at half-maximum.
{"title":"Simulation of electron transport in a catoptric photomultiplier tube concept for large rectangular scintillator crystals","authors":"J. Beavers, K. Huddleston, N. Hines, W. McNeil","doi":"10.1088/1748-0221/19/04/p04025","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/p04025","url":null,"abstract":"\u0000 Spectroscopic scintillation detector form factors have been\u0000 guided primarily by the design of commercially available photonic\u0000 sensors. These devices, such as photomultiplier tubes, silicon\u0000 photomultipliers, and hybrid photodetectors have underperformed in\u0000 one or more areas such as size, power consumption, and resolution. A\u0000 novel photomultiplier tube having a 50.8×152.4 mm2 \u0000 rectangular window, utilizing a reflection-mode photocathode, and a\u0000 low-gain, miniaturized dynode set is considered here to improve\u0000 photosensor packaging while enabling high-efficiency, low-resolution\u0000 scintillation spectroscopy with large, planar scintillators. Using a\u0000 phenomenological multiphysics simulation process informed by\u0000 empirical data, photoelectron collection efficiency,\u0000 single-photoelectron response, electron transit time, and transit\u0000 time spread have been modeled over a range of operating\u0000 potentials. At 750 V between the photocathode and anode, 72.5% of\u0000 photoelectrons are collected at the first dynode, and the average\u0000 gain is estimated to be 805. The most probable transit time is\u0000 14.9 ns, with a transit time spread of 2.7 ns full-width at\u0000 half-maximum.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140761045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/p04023
Y. Nagao, N. Suzui, Y.-G. Yin, Y. Miyoshi, Y. Noda, K. Enomoto, M. Tsuda, T. Yabe, H. Watabe, M. Yamaguchi, N. Kawachi
Nondestructive monitoring of positron-emitting tracers in plant bodies at multiple points, including points separated by large distances, has been realised with the positron multiprobe system (PMPS) to investigate graminaceous plants, whose stems and leaves have simple shapes. Recently, the translocation of photosynthates into fruits has been studied intensively using a 11C tracer. The relatively complex shapes of the stems and leaves of these plants sometimes prevent the detector heads of the PMPS from approaching and being fixed to the target stem properly because of its relatively large and heavy detector heads based on photomultiplier tubes. Owing to the compactness, lightweightness and recent advances of silicon photomultipliers (SiPMs), fabricating compact and lightweight detector heads has become possible. In this study, we developed a compact PMPS (CPMPS) using SiPMs and successfully demonstrated its capability for monitoring a 11C tracer in strawberry stems. Moreover, we found that energy-window filtering markedly reduced noise events without radiation shielding. The dominant ionisation events detected by the CPMPS were Compton scattering and subsequent photoabsorption of a single 511 keV gamma ray, suggesting that the ionisation events of single-gamma-ray emitters, such as 42K, 43K, 54Mn, 59Fe and 65Zn, can be detected by the CPMPS. The developed CPMPS can also be applied to study the physiology of other plants with intricately shaped stems and leaves, such as the tomato and eggplant.
{"title":"Development of a compact multiprobe system for monitoring positron-emitting tracers in plant stems","authors":"Y. Nagao, N. Suzui, Y.-G. Yin, Y. Miyoshi, Y. Noda, K. Enomoto, M. Tsuda, T. Yabe, H. Watabe, M. Yamaguchi, N. Kawachi","doi":"10.1088/1748-0221/19/04/p04023","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/p04023","url":null,"abstract":"\u0000 Nondestructive monitoring of positron-emitting tracers in\u0000 plant bodies at multiple points, including points separated by large\u0000 distances, has been realised with the positron multiprobe system\u0000 (PMPS) to investigate graminaceous plants, whose stems and leaves\u0000 have simple shapes. Recently, the translocation of photosynthates\u0000 into fruits has been studied intensively using a 11C tracer.\u0000 The relatively complex shapes of the stems and leaves of these\u0000 plants sometimes prevent the detector heads of the PMPS from\u0000 approaching and being fixed to the target stem properly because of\u0000 its relatively large and heavy detector heads based on\u0000 photomultiplier tubes. Owing to the compactness, lightweightness\u0000 and recent advances of silicon photomultipliers (SiPMs), fabricating\u0000 compact and lightweight detector heads has become possible. In this\u0000 study, we developed a compact PMPS (CPMPS) using SiPMs and\u0000 successfully demonstrated its capability for monitoring a 11C\u0000 tracer in strawberry stems. Moreover, we found that energy-window\u0000 filtering markedly reduced noise events without radiation shielding.\u0000 The dominant ionisation events detected by the CPMPS were Compton\u0000 scattering and subsequent photoabsorption of a single 511 keV gamma\u0000 ray, suggesting that the ionisation events of single-gamma-ray\u0000 emitters, such as 42K, 43K, 54Mn, 59Fe and\u0000 65Zn, can be detected by the CPMPS. The developed CPMPS can\u0000 also be applied to study the physiology of other plants with\u0000 intricately shaped stems and leaves, such as the tomato and\u0000 eggplant.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140774624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04038
E. Papadomanolaki, A. Papangelis, M. Torris, G. Theodoratos, I. Glikiotis, C. Lambropoulos
The design of HVCMOS detectors for measuring Galactic Cosmic Rays (GCR) and Solar Energetic Particles (SEP) is presented, with the goal of covering a very wide dynamic range (from ∼0.5 fC to pC). Two different pixel designs are shown, one with low gain tailored to high energy depositions and one with high gain for low energy depositions. Both designs utilize a sensing diode consisting of a fully-depleted, high resistivity substrate and a segmented deep n-well on top. LFoundry 0.15 μm technology is used. The design choices are backed by simulation results and preliminary measurements.
{"title":"Two HVCMOS active pixel ASIC designs for the Measurement of GCR and SEP with a combined dynamic range of >80 dB","authors":"E. Papadomanolaki, A. Papangelis, M. Torris, G. Theodoratos, I. Glikiotis, C. Lambropoulos","doi":"10.1088/1748-0221/19/04/c04038","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04038","url":null,"abstract":"\u0000 The design of HVCMOS detectors for measuring Galactic Cosmic Rays (GCR) and Solar Energetic Particles (SEP) is presented, with the goal of covering a very wide dynamic range (from ∼0.5 fC to pC). Two different pixel designs are shown, one with low gain tailored to high energy depositions and one with high gain for low energy depositions. Both designs utilize a sensing diode consisting of a fully-depleted, high resistivity substrate and a segmented deep n-well on top. LFoundry 0.15 μm technology is used. The design choices are backed by simulation results and preliminary measurements.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140779509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04047
F. Lenta, D. Calvo, F. Cossio, G. Mazza, R. Wheadon, J. Becker, Kai-Thomas Brinkmann, M. Caselle, A. Kopmann, Olena Manzhura, S. Mattiazzo, M. Peter, V. Sidorenko, P. Staněk, T. Stockmanns, Lukáš Tomášek, N. Tröll, Kai Lukas Unger, H. Zaunick
The ToASt ASIC is a 64-channel integrated circuit developed for the readout of the Silicon strip detector project designed to be placed in the Micro-Vertex Detector of the PANDA experiment. ToASt is implemented in a commercial 110 nm CMOS technology and can provide information on the position, time, and deposited energy of the particle passing through the detector. Its time resolution is given by its 160 MHz master clock. The ASIC has been developed in the framework of the European FAIRnet project. The chip has been characterized electrically both standalone and coupled with sensors, with focus on its noise performances. It has also been tested for radiation tolerance, both in terms of Total Ionizing Dose and Single Event Upset. In particular, this work aims to guarantee that the studied ASICs can sustain the levels of ionizing radiation expected in the PANDA experiment and to study the noise characteristics for the two polarities of the ASIC.
{"title":"Characterization of the radiation tolerant ToASt ASIC for the readout of the PANDA MVD strip detector","authors":"F. Lenta, D. Calvo, F. Cossio, G. Mazza, R. Wheadon, J. Becker, Kai-Thomas Brinkmann, M. Caselle, A. Kopmann, Olena Manzhura, S. Mattiazzo, M. Peter, V. Sidorenko, P. Staněk, T. Stockmanns, Lukáš Tomášek, N. Tröll, Kai Lukas Unger, H. Zaunick","doi":"10.1088/1748-0221/19/04/c04047","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04047","url":null,"abstract":"\u0000 The ToASt ASIC is a 64-channel integrated circuit developed for the readout of the Silicon strip detector project designed to be placed in the Micro-Vertex Detector of the PANDA experiment. ToASt is implemented in a commercial 110 nm CMOS technology and can provide information on the position, time, and deposited energy of the particle passing through the detector. Its time resolution is given by its 160 MHz master clock.\u0000The ASIC has been developed in the framework of the European FAIRnet project.\u0000The chip has been characterized electrically both standalone and coupled with sensors, with focus on its noise performances. It has also been tested for radiation tolerance, both in terms of Total Ionizing Dose and Single Event Upset.\u0000In particular, this work aims to guarantee that the studied ASICs can sustain the levels of ionizing radiation expected in the PANDA experiment and to study the noise characteristics for the two polarities of the ASIC.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140794714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The development of silicon pixel sensors (SPS) with high operating voltage, low leakage currents, and large arrays can contribute to improving the energy and spatial resolution of advanced X-ray light source detection systems. The Future Detection System comprises a hybrid-pixel detector with a collective resolution of 2048 × 2048 pixels, each measuring 100 μm× 100 μm. It consists of 16 p-i-n SPSs, where each sensor has an array size of 1024× 256 pixels. In this paper, the design of the pixel and guard rings is optimized to achieve uniform and ultra-low pixels leakage currents under high operating voltage. The high leakage current uniformity of the designed sensor is demonstrated through several tests conducted on small scale array SPS. The leakage current of the tested pixels is in the range of 0.50–0.55 pA at room temperature with less than 5% leakage deviation on the whole array. It is accompanied by breakdown voltages greater than 1000 V. The optimized 256× 128 pixel SPS showcases uniform leakage currents below 0.6 pA per pixel at room temperature, as evidence in both the edge and central pixels. The 1024× 256 pixels SPS is then manufactured based on the optimized design results. The obtained results show that the breakdown voltage is greater than 1000 V and the leakage current of the pixel is less than 2.5 pA. In addition, the interpixel capacitance of the sensor also reach an ultra-low level of 16 fF. This study paves the way for the development of a robust semiconductor device solution for applications where ultra-fast and large panel-pixel detectors in advanced X-ray light source detection systems are required.
{"title":"Ultra-large scale array silicon pixel sensors with uniform and low leakage current for advanced X-ray light sources","authors":"Peng Sun, Yupeng Lu, Gaobo Xu, Jianyu Fu, Mingzheng Ding, Zhenhua Wu, Huaxiang Yin","doi":"10.1088/1748-0221/19/04/p04019","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/p04019","url":null,"abstract":"\u0000 The development of silicon pixel sensors (SPS) with high\u0000 operating voltage, low leakage currents, and large arrays can\u0000 contribute to improving the energy and spatial resolution of\u0000 advanced X-ray light source detection systems. The Future Detection\u0000 System comprises a hybrid-pixel detector with a collective\u0000 resolution of 2048 × 2048 pixels, each measuring\u0000 100 μm× 100 μm. It consists of 16 p-i-n\u0000 SPSs, where each sensor has an array size of 1024× 256\u0000 pixels. In this paper, the design of the pixel and guard rings is\u0000 optimized to achieve uniform and ultra-low pixels leakage currents\u0000 under high operating voltage. The high leakage current uniformity of\u0000 the designed sensor is demonstrated through several tests conducted\u0000 on small scale array SPS. The leakage current of the tested pixels\u0000 is in the range of 0.50–0.55 pA at room temperature with less than\u0000 5% leakage deviation on the whole array. It is accompanied by\u0000 breakdown voltages greater than 1000 V. The optimized\u0000 256× 128 pixel SPS showcases uniform leakage currents below\u0000 0.6 pA per pixel at room temperature, as evidence in both the edge\u0000 and central pixels. The 1024× 256 pixels SPS is then\u0000 manufactured based on the optimized design results. The obtained\u0000 results show that the breakdown voltage is greater than 1000 V and\u0000 the leakage current of the pixel is less than 2.5 pA. In addition,\u0000 the interpixel capacitance of the sensor also reach an ultra-low\u0000 level of 16 fF. This study paves the way for the development of a\u0000 robust semiconductor device solution for applications where\u0000 ultra-fast and large panel-pixel detectors in advanced X-ray light\u0000 source detection systems are required.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140796204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.1088/1748-0221/19/04/c04022
R. Mulargia, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignalis, M. Costa, T. Croci, M. Ferrero, F. Ficorella, A. Fondacci, S. Giordanengo, O. Hammad Ali, C. Hanna, L. Lanteri, L. Menzio, V. Monaco, A. Morozzi, F. Moscatelli, D. Passeri, N. Pastrone, G. Paternoster, F. Siviero, R.S. White, V. Sola
EXFLU1 is a new batch of radiation-resistant silicon sensors manufactured at Fondazione Bruno Kessler (FBK, Italy). The EXFLU1 sensors utilize thin substrates that remain operable even after extensive irradiation. They incorporate Low-Gain Avalanche Diode (LGAD) technology, enabling internal multiplication of charge carriers to boost the small signal produced by a particle crossing their thin active thicknesses, ranging from 15 to 45 μ m. To address current challenges related to acceptor removal, the EXFLU1 production incorporates improved defect engineering techniques. This includes the so called carbonated LGADs, where carbon doping is implanted alongside boron in the gain layer. This contribution focuses on evaluating the performances of thin sensors with carbonated gain layer from the EXFLU1 production, before and after irradiation up to 2.5· 1015 n1 Mev eq./cm2. The conducted tests involve static and transient characterizations, including I-V and C-V measurements, as well as laser and β-source tests. This work aims to present the state of the art in LGAD sensor technology with a carbonated gain layer and shows the characterization of the most radiation-resistant LGAD sensors produced to date.
{"title":"Characterization of thin carbonated LGADs after irradiation up to 2.5· 1015 n1 Mev eq./cm2","authors":"R. Mulargia, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignalis, M. Costa, T. Croci, M. Ferrero, F. Ficorella, A. Fondacci, S. Giordanengo, O. Hammad Ali, C. Hanna, L. Lanteri, L. Menzio, V. Monaco, A. Morozzi, F. Moscatelli, D. Passeri, N. Pastrone, G. Paternoster, F. Siviero, R.S. White, V. Sola","doi":"10.1088/1748-0221/19/04/c04022","DOIUrl":"https://doi.org/10.1088/1748-0221/19/04/c04022","url":null,"abstract":"\u0000 EXFLU1 is a new batch of radiation-resistant silicon sensors manufactured at Fondazione Bruno Kessler (FBK, Italy).\u0000The EXFLU1 sensors utilize thin substrates that remain operable even after extensive irradiation. They incorporate Low-Gain Avalanche Diode (LGAD) technology, enabling internal multiplication of charge carriers to boost the small signal produced by a particle crossing their thin active thicknesses, ranging from 15 to 45 μ m.\u0000To address current challenges related to acceptor removal, the EXFLU1 production incorporates improved defect engineering techniques. This includes the so called carbonated LGADs, where carbon doping is implanted alongside boron in the gain layer. This contribution focuses on evaluating the performances of thin sensors with carbonated gain layer from the EXFLU1 production, before and after irradiation up to 2.5· 1015 n1 Mev eq./cm2.\u0000The conducted tests involve static and transient characterizations, including I-V and C-V measurements, as well as laser and β-source tests.\u0000This work aims to present the state of the art in LGAD sensor technology with a carbonated gain layer and shows the characterization of the most radiation-resistant LGAD sensors produced to date.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140758641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：