Electronic Materials Letters最新文献

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Enhanced Hall Mobility and d^0 Ferromagnetism in Li-Doped ZnO Thin Films Prepared by Aerosol-Assisted CVD 气溶胶辅助CVD制备li掺杂ZnO薄膜的增强霍尔迁移率和d^0铁磁性

IF 2.4 4区材料科学 Q2 Materials Science

Electronic Materials Letters

Pub Date : 2023-05-12 DOI: 10.1007/s13391-023-00438-z

M. A. Mustajab, P. Arifin, S. Suprijadi, T. Winata

引用次数: 0

Effect of Electron Irradiation on Electronic Structure of Ni_41Co_6Mn_43Sn_10 Alloys 电子辐照对Ni_41Co_6Mn_43Sn_10合金电子结构的影响

IF 2.4 4区材料科学 Q2 Materials Science

Electronic Materials Letters

Pub Date : 2023-05-08 DOI: 10.1007/s13391-023-00432-5

Sibo Sun, Jun Zhang, Zhiyong Gao, W. Cai

引用次数: 0

Formation and Control of Hexagonal Pyramid Structures from GaN -Based Pillar-Shaped Structures Using Focused Ion-Beam Process 利用聚焦离子束工艺从氮化镓基柱状结构中形成和控制六方金字塔结构

IF 2.4 4区材料科学 Q2 Materials Science

Electronic Materials Letters

Pub Date : 2023-05-08 DOI: 10.1007/s13391-023-00435-2

Woon Jae Ruh, Hyeonmin Choi, Jong Hoon Kim, Seungwoo Jeon, Y. Noh, Mino Yang, Young Heon Kim

引用次数: 0

Inner Mechanism of Enhanced Energy Storage Properties and Efficiency for CaTiO_3 Modified 0.92NaNbO_3-0.08Bi(Mg_0.5Ti_0.5)O_3 Lead-Free Ceramics CaTiO_ 3改性0.92NaNbO_3-0.08Bi（Mg_0.5Ti_0.5）O_

IF 2.4 4区材料科学 Q2 Materials Science

Electronic Materials Letters

Pub Date : 2023-05-05 DOI: 10.1007/s13391-023-00434-3

Peng Nong, Yue Pan, Qinpeng Dong, Dafu Zeng, Mingzhao Xu, Xiang Wang, Jiaming Wang, Lianyun Deng, Xiuli Chen, Huanfu Zhou

引用次数: 0

Copper Bonding Technology in Heterogeneous Integration 异质集成中的铜键合技术

IF 2.4 4区材料科学 Q2 Materials Science

Electronic Materials Letters

Pub Date : 2023-04-19 DOI: 10.1007/s13391-023-00433-4

Yoon-Gu Lee, Michael McInerney, Young‐Chang Joo, I. Choi, S. Kim

引用次数: 2

Low Voltage a-IGZO Thin Film Transistor Using Tantalum Oxide by Thermal Oxidation 采用热氧化钽的低压a-IGZO薄膜晶体管

IF 2.4 4区材料科学 Q2 Materials Science

Electronic Materials Letters

Pub Date : 2023-04-19 DOI: 10.1007/s13391-023-00431-6

E. Yu, Seung Gyun Kim, SeoIk Kang, Hyuk Su Lee, Jong Mo Lee, S. Moon, Byung Seong Bae

引用次数: 0

Suppression of Leakage Currents in Photo-multiplication Photodetectors with Oxidation-Controlled Metal Interfacial Layer 氧化控制金属界面层光倍增光电探测器中泄漏电流的抑制

IF 2.4 4区材料科学 Q2 Materials Science

Electronic Materials Letters

Pub Date : 2023-04-13 DOI: 10.1007/s13391-023-00429-0

S. Lim, Ji-young Lee, Tae Hun Lim, Seri Lee, Seung Ho Lee, Gyu Min Kim, S. Oh

引用次数: 0

Effect of Surface Termination on Carrier Dynamics of Metal Halide Perovskites: Ab Initio Quantum Dynamics Study 表面终止对金属卤化物钙钛矿载流子动力学的影响：从头算量子力学研究

IF 2.4 4区材料科学 Q2 Materials Science

Electronic Materials Letters

Pub Date : 2023-04-12 DOI: 10.1007/s13391-023-00428-1

Yoonhoo Ha, Yoosang Son, Dooam Paik, Ki-Ha Hong, Hyungjun Kim

Metal halide perovskites (MHPs) have attracted considerable attentions as promising candidates for next-generation optoelectronic devices, such as light-emitting diode (LED), owing to their outstanding photophysical properties. Nanostructuring is considered an essential approach to facilitate the bright emission of MHPs, which entails an increase in the surface domain that can directly affect the carrier dynamics. However, a comprehensive understanding of the surface termination effect on the photodynamic properties of MHPs is still lacking. Herein, we systematically investigate the effect of surface termination on the carrier recombination dynamics of CsPbBr₃ using ab-initio non-adiabatic molecular dynamics simulations. We found separate localizations of electron and hole carriers in the vicinity of the more and less coordinated inorganic polyhedral, respectively, which can be explained by the energy level changes associated with the modifications in Pb–Br bond lengths and their anharmonicity. This leads to the spatial separation of charge carriers, which retards the radiative kinetics more than the non-radiative one, reducing the photoluminescence quantum yield (PLQY). We further found that the homogenous linewidth is broadened upon introduction of surface terminations. Thus, our study suggests a possible LED-performance degradation mechanism due to surface termination, and thereby proposes guidelines for enhancing the light-emission properties of nanostructured MHPs.

Graphical Abstract

金属卤化物钙钛矿(MHPs)由于其优异的光物理性能，作为下一代光电器件(如发光二极管(LED))的有前途的候选者，引起了人们的广泛关注。纳米结构被认为是促进MHPs发光的重要方法，这需要增加表面结构域，这可以直接影响载流子动力学。然而，对表面终止效应对MHPs光动力学性质的影响还缺乏全面的了解。本文采用ab-initio非绝热分子动力学模拟系统地研究了表面终止对CsPbBr3载流子重组动力学的影响。我们发现在多配位和少配位的无机多面体附近分别存在电子和空穴载流子，这可以用Pb-Br键长修饰引起的能级变化和它们的非调和性来解释。这导致了载流子的空间分离，这比非辐射动力学更延迟辐射动力学，降低了光致发光量子产率(PLQY)。我们进一步发现，在引入表面末端后，均匀线宽被拓宽。因此，我们的研究提出了由于表面终止可能导致led性能下降的机制，从而为提高纳米结构MHPs的发光性能提供了指导方针。图形抽象

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引用次数: 0

Synthesis of CeO2 Nanoparticles Derived by Urea Condensation for Chemical Mechanical Polishing 尿素缩合法制备化学机械抛光用CeO_2纳米粒子

IF 2.4 4区材料科学 Q2 Materials Science

Electronic Materials Letters

Pub Date : 2023-04-10 DOI: 10.1007/s13391-023-00427-2

Zhenyang Wang, Tongqing Wang, Lifei Zhang, Xinchun Lu

The synthesis of CeO₂ nanoparticles for CeO₂ based slurry gains continuous emphasis on improving its performance in the chemical mechanical polishing of dielectric materials. Urea was selected to dominate the growth and morphology during the calcination process. Thermogravimetry experiments were used to analyze the the decomposition behavior. Particle morphology and size were analyzed. Crystalline phase information and surface valence were used to compare the differences in surface physical and chemical properties of ceria by different synthesis process. The CeO₂ nanoparticles synthesized with urea were dispersed in water as slurry. The particle sizes of CeO₂ were measured by dynamic light scattering. The Zeta potential of CeO₂ dispersion were measured to show dispersing performance. The CeO₂ nanoparticles synthesized with urea condensation show good monodisperse properties. The material removal rate of silicon oxide and surface quality after chemical mechanical polishing were selected to evaluate the chemical mechanical polishing performance. The CeO₂ nanoparticles synthesized with urea condensation not only yielded better surface quality results than the commercial slurry but also showed a 153% (pH = 4) and 100% (pH = 10) increase in the material removal rate of silicon oxide compared to commercial.

用于CeO2基浆料的CeO2纳米颗粒的合成不断受到重视，提高其在介质材料化学机械抛光中的性能。在煅烧过程中，尿素在生长和形态上起主导作用。采用热重实验对其分解行为进行了分析。分析了颗粒形态和大小。利用晶相信息和表面价态来比较不同合成工艺下氧化铈表面物理化学性质的差异。用尿素合成的CeO2纳米颗粒以浆料的形式分散在水中。采用动态光散射法测定了氧化铈的粒径。通过测定CeO2分散体的Zeta电位来表征其分散性能。尿素缩合法制备的CeO2纳米颗粒具有良好的单分散性能。选择化学机械抛光后氧化硅材料去除率和表面质量来评价化学机械抛光性能。尿素缩合法制备的CeO2纳米颗粒不仅表面质量优于商品料浆，而且对氧化硅的去除率比商品料浆提高了153% (pH = 4)和100% (pH = 10)。

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引用次数: 0

Compressive Sinter Bonding in Air Between Cu Finishes Using Paste Containing Composite Ag2O-Cu Filler 含复合Ag_2O-Cu填料的膏体在铜表面空气中压缩烧结结合

IF 2.4 4区材料科学 Q2 Materials Science

Electronic Materials Letters

Pub Date : 2023-04-06 DOI: 10.1007/s13391-023-00430-7

Byeong Jo Han, Jong-Hyun Lee

A Ag₂O-Cu composite filler was adopted as a sintering material between Cu finishes under compression to achieve the high-speed bonding of dies in an air atmosphere via a cost-effective paste and finish process. The commercial Cu particles had an average size of 2 μm, and the synthesized Ag₂O particles were in the submicrometer range with an average size of 210 nm. The Ag₂O particles in the paste started decomposing at ∼150 °C, and the liquid-type reductant in the paste effectively reduced the oxide layers on the Cu particles as well as the upper and lower Cu finishes during bonding. Therefore, the in situ-generated active Ag and fresh Cu surfaces enabled significantly rapid sinter bonding under 5 MPa compression. Only 30 s of bonding at 300 °C was required to achieve an excellent shear strength of 27.8 MPa in the created bond-line, while 90 s of bonding produced a near-full-density structure with a strength of 41.9 MPa despite solid-state sintering when the 3:7 (Cu particles:Ag₂O particles) mixing ratio was used. Well-dispersed Ag₂O particles did not create a non-sintered interface or form large voids upon outgassing during decomposition. The out-diffused Cu was reoxidized after sintering with Ag, forming irregularly dispersed Cu₂O shells that remained in the microstructure of the full-density bond-line.

Graphical Abstract

采用ag20 -Cu复合填料作为压缩Cu饰面之间的烧结材料，通过经济高效的膏体-饰面工艺实现了模具在空气气氛中的高速粘合。商品Cu颗粒的平均尺寸为2 μm，合成的Ag2O颗粒在亚微米范围内，平均尺寸为210 nm。浆料中的Ag2O颗粒在~ 150℃时开始分解，浆料中的液体型还原剂在键合过程中有效地还原了Cu颗粒上的氧化层以及上、下Cu饰面。因此，原位生成的活性Ag和新鲜Cu表面能够在5mpa压缩下显著快速烧结结合。在300℃条件下，只需要30s的键合时间，所建立的键合线剪切强度达到27.8 MPa，而在3:7 (Cu颗粒:Ag2O颗粒)的混合比例下，在90s的键合时间内，即使固相烧结，也能形成接近全密度的结构，强度达到41.9 MPa。分散良好的Ag2O颗粒在分解过程中没有形成非烧结界面或在排气时形成大空隙。向外扩散的Cu与Ag烧结后发生再氧化，形成不规则分散的Cu2O壳层，保留在全密度键合线上的微观结构中。图形抽象

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引用次数: 0

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