Pub Date : 2008-07-28DOI: 10.1109/ICEPT.2008.4607047
Yi Leng, Ying Pan, Qingxia Li, Sheng Liu
During the parameter acquisition of rotating components, wireless data transmission is an efficient way to resolve data transmission problem in rotating environments, and the design of wireless data transmission system is based on EMWP (electromagnetic wave propagation). In this paper, EMWP characteristics in rotating environments are preliminarily studied in order to provide a strong theoretical support for developing high-performance rotating component radio monitoring system. In particular, the Doppler frequency shift and the EMW polarization characteristics in rotating movement are fundamentally analyzed. Finally, a test bench of rotating component is built to test EMW propagation characteristics of both stationary transmitter and rotating transmitter.
{"title":"Analysis of electromagnetic wave propagation characteristics in rotating environments","authors":"Yi Leng, Ying Pan, Qingxia Li, Sheng Liu","doi":"10.1109/ICEPT.2008.4607047","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607047","url":null,"abstract":"During the parameter acquisition of rotating components, wireless data transmission is an efficient way to resolve data transmission problem in rotating environments, and the design of wireless data transmission system is based on EMWP (electromagnetic wave propagation). In this paper, EMWP characteristics in rotating environments are preliminarily studied in order to provide a strong theoretical support for developing high-performance rotating component radio monitoring system. In particular, the Doppler frequency shift and the EMW polarization characteristics in rotating movement are fundamentally analyzed. Finally, a test bench of rotating component is built to test EMW propagation characteristics of both stationary transmitter and rotating transmitter.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83355512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-07-28DOI: 10.1109/ICEPT.2008.4607010
Ming Li, Tao Wen
Convolutional code and Viterbi decoding is one of the methods used for channel coding. Convolutional coding is widely used in many aspects because of its excellent performance. However, both the coding algorithm and hardware implementation are very complex. Along with the continuous deepening of SOC design, hardware-software co-design technology has become more and more important as one part of SOC design. A hardware-software platform used for the design of the Viterbi decoder is proposed in this paper. The platform includes embedded software, hardware acceleration, and peripheral interface. Good practicality and powerful verification functions are proved, and optimum design for the Viterbi decoder can be achieved by using the platform.
{"title":"Hardware /software co-design for Viterbi decoder","authors":"Ming Li, Tao Wen","doi":"10.1109/ICEPT.2008.4607010","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607010","url":null,"abstract":"Convolutional code and Viterbi decoding is one of the methods used for channel coding. Convolutional coding is widely used in many aspects because of its excellent performance. However, both the coding algorithm and hardware implementation are very complex. Along with the continuous deepening of SOC design, hardware-software co-design technology has become more and more important as one part of SOC design. A hardware-software platform used for the design of the Viterbi decoder is proposed in this paper. The platform includes embedded software, hardware acceleration, and peripheral interface. Good practicality and powerful verification functions are proved, and optimum design for the Viterbi decoder can be achieved by using the platform.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81649748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-07-28DOI: 10.1109/ICEPT.2008.4607122
Peng Li, K. Pan, Ning Ye-xiang
Along with electronic products developing toward lighter, thinner, and multi-functional integration, chip scale package (CSP) has been widely used in electronic packages. Wafer level packaging (WLP) has become one dominant technology. However, applications of WLP are limited by solder joint fatigue due to stress generated by the CTE mismatch among different materials. Compliant wafer level packaging (CWLP) technology can be used to enhance thermal fatigue reliability of packages greatly. Structure of CWLP with compliant layer is introduced firstly. Subsequently, ANSYS software is employed, a quarter 3D model is developed based on 128MB DDR SDRAM, and the model is loaded on four thermal cycles from -40degC to 125degC. Finally, by combining simulation results with FEM results and experimental results in other studies, comparative analyses are performed based on different thickness of compliant layer. FEM results show that, CWLP structure with compliant layer studied is reasonable in relieving the stress generated by CTE mismatch. Parameters, such as thickness of compliant layer and compliant material, are both important factors impact reliability of solder joint greatly. Thermal fatigue reliability can be significantly improved by reasonable selections of these parameters.
{"title":"Finite element analysis of reliability on compliant wafer level packaging with compliant layer","authors":"Peng Li, K. Pan, Ning Ye-xiang","doi":"10.1109/ICEPT.2008.4607122","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607122","url":null,"abstract":"Along with electronic products developing toward lighter, thinner, and multi-functional integration, chip scale package (CSP) has been widely used in electronic packages. Wafer level packaging (WLP) has become one dominant technology. However, applications of WLP are limited by solder joint fatigue due to stress generated by the CTE mismatch among different materials. Compliant wafer level packaging (CWLP) technology can be used to enhance thermal fatigue reliability of packages greatly. Structure of CWLP with compliant layer is introduced firstly. Subsequently, ANSYS software is employed, a quarter 3D model is developed based on 128MB DDR SDRAM, and the model is loaded on four thermal cycles from -40degC to 125degC. Finally, by combining simulation results with FEM results and experimental results in other studies, comparative analyses are performed based on different thickness of compliant layer. FEM results show that, CWLP structure with compliant layer studied is reasonable in relieving the stress generated by CTE mismatch. Parameters, such as thickness of compliant layer and compliant material, are both important factors impact reliability of solder joint greatly. Thermal fatigue reliability can be significantly improved by reasonable selections of these parameters.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89659985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-07-28DOI: 10.1109/ICEPT.2008.4607135
Bo Wang, Fengshun Wu, B. Du, B. An, Yiping Wu
This study investigates the effect of the stand-off height (SOH) on the microstructure and tensile fracture mode of Cu/Sn9Zn/Cu solder joints. Solder joints with SOH of 100 mum, 50 mum and 20 mum are studied. It is found that as the SOH is reduced, Zn content has a rapid decrease in the solder bulk, while, the intermetallic compound (IMC) layer proportion increases. SOH of the solder joint also has an important effect on the tensile strength and tensile fracture mode. Tensile strength of solder joints decreases with lower SOH, which correlates with the change of microstructure and composition in solder joint. When the SOH is reduced, the fracture path of solder joint transfers from the bulk of the solder joint into the IMC/solder interface, and the fracture mode tends to transform from ductile fracture into brittle fracture.
{"title":"Effect of stand-off height on the microstructure and fracture mode of Cu/Sn-9Zn/Cu solder joint under tensile test","authors":"Bo Wang, Fengshun Wu, B. Du, B. An, Yiping Wu","doi":"10.1109/ICEPT.2008.4607135","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607135","url":null,"abstract":"This study investigates the effect of the stand-off height (SOH) on the microstructure and tensile fracture mode of Cu/Sn9Zn/Cu solder joints. Solder joints with SOH of 100 mum, 50 mum and 20 mum are studied. It is found that as the SOH is reduced, Zn content has a rapid decrease in the solder bulk, while, the intermetallic compound (IMC) layer proportion increases. SOH of the solder joint also has an important effect on the tensile strength and tensile fracture mode. Tensile strength of solder joints decreases with lower SOH, which correlates with the change of microstructure and composition in solder joint. When the SOH is reduced, the fracture path of solder joint transfers from the bulk of the solder joint into the IMC/solder interface, and the fracture mode tends to transform from ductile fracture into brittle fracture.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74584432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-07-28DOI: 10.1109/ICEPT.2008.4607055
H. Ji, Mingyu Li, Chunqing Wang, Jongmyung Kim, Daewon Kim
In this paper, the bond interface of Al-1 wt.%Si wire bonded on Au/Ni/Cu pad at atmosphere temperature was analyzed by using high resolution transmission electron microscopy. Nano-scale characteristics at bond interface indicated that elemental aluminum diffusing into gold layer was with the feature of step-level periodicity. Due to exceeding solid solubility limit, intermediate Au8Al3 phase penetrated among the Al-Au solid solutions. The diffusion distance was not more than 100 nm analyzed by energy X-ray dispersive spectrum. This process controlled by solid diffusion reaction was realized by the rapid and periodic ultrasonic vibration according to the theoretical calculation based on the Fickpsilas Law and the observation of the deformation twins among the bond wire and within the interfacial diffusion layer.
{"title":"Nanoscale analysis of ultrasonic wedge bond interface by using high-resolution transmission electron microscopy","authors":"H. Ji, Mingyu Li, Chunqing Wang, Jongmyung Kim, Daewon Kim","doi":"10.1109/ICEPT.2008.4607055","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607055","url":null,"abstract":"In this paper, the bond interface of Al-1 wt.%Si wire bonded on Au/Ni/Cu pad at atmosphere temperature was analyzed by using high resolution transmission electron microscopy. Nano-scale characteristics at bond interface indicated that elemental aluminum diffusing into gold layer was with the feature of step-level periodicity. Due to exceeding solid solubility limit, intermediate Au8Al3 phase penetrated among the Al-Au solid solutions. The diffusion distance was not more than 100 nm analyzed by energy X-ray dispersive spectrum. This process controlled by solid diffusion reaction was realized by the rapid and periodic ultrasonic vibration according to the theoretical calculation based on the Fickpsilas Law and the observation of the deformation twins among the bond wire and within the interfacial diffusion layer.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74667952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-07-28DOI: 10.1109/ICEPT.2008.4607023
Wu Zhaohua, Zhou Dejian, Huang Chunyue
Four process parameters including, the pad length, the pad width, the stencil thickness and the stand-off, are chosen as four control factors, and by using an L25(56) orthogonal array, the no-fillet chip component solder joints shapes with 25 different process parameters combinations are established. And then all the shape prediction models of the 25 solder joints are built through the Surface Evolver soft, after that, the finite element analysis models are set up by converting the above ones. Afterwards, a non-linear finite element analysis on the no-fillet chip component solder joints under thermal cycles are performed by using ANSYS soft, and the thermal fatigue lifes of them are achieved through Coffin-Manson equation. Finally the variance analysis was performed based on the above lifes figures. The research show that with 95% confidence the stand-off has a significant effect on the reliability of the no-fillet chip component solder joints, whereas the pad length, the pad width and the stencil thickness have little effects on the reliability of the ones.
{"title":"Study on no-fillet SMT solder joint reliability based on solder joint shape CAD","authors":"Wu Zhaohua, Zhou Dejian, Huang Chunyue","doi":"10.1109/ICEPT.2008.4607023","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607023","url":null,"abstract":"Four process parameters including, the pad length, the pad width, the stencil thickness and the stand-off, are chosen as four control factors, and by using an L25(56) orthogonal array, the no-fillet chip component solder joints shapes with 25 different process parameters combinations are established. And then all the shape prediction models of the 25 solder joints are built through the Surface Evolver soft, after that, the finite element analysis models are set up by converting the above ones. Afterwards, a non-linear finite element analysis on the no-fillet chip component solder joints under thermal cycles are performed by using ANSYS soft, and the thermal fatigue lifes of them are achieved through Coffin-Manson equation. Finally the variance analysis was performed based on the above lifes figures. The research show that with 95% confidence the stand-off has a significant effect on the reliability of the no-fillet chip component solder joints, whereas the pad length, the pad width and the stencil thickness have little effects on the reliability of the ones.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75725271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-07-28DOI: 10.1109/ICEPT.2008.4607086
C. Ning, Xiaosong Ma, Jiang Haihua
In this paper, a humidity absorption test experiment is carried out under the temperature 20degC, 40degC and 60degC respectively and the environmental humidity was changed in different modes in each case. The experimental sample is from material of DA, and it is 14.5times5.5times0.37 mm3 in size, and 94.4 mg in weight. The experiment data are collected to gain the saturated moisture. The moisture diffusion coefficient (D) of the sample can be calculated by fitting the line of data curve and calculating the slope of the line. The constants (QD and D0) which are in the Arrhenius formula are worded out by using the D [1]. In order to analyze the failure model in the interface between DA and die pad, a new type of system-in-package (SiP) is modeled. The simulation environments are set as the conditions of stored in the room temperature and processed in the SMT assembly production line. The analysis aim is to calculate the humidity distribution and the hygroscopic and thermal stress in these conditions. The results of FEM analysis shows that the max hygromechanical and thermo-mechanical stress appear in the corner of the interface between the Die and the DA, and the corner may be the risk location. The delamination may occur in this place. So it is necessary to analysis the reliability of the interface between the DA and others materials.
{"title":"The humidity and thermal characteristics of die-attach (DA) and its impact on the package reliability","authors":"C. Ning, Xiaosong Ma, Jiang Haihua","doi":"10.1109/ICEPT.2008.4607086","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607086","url":null,"abstract":"In this paper, a humidity absorption test experiment is carried out under the temperature 20degC, 40degC and 60degC respectively and the environmental humidity was changed in different modes in each case. The experimental sample is from material of DA, and it is 14.5times5.5times0.37 mm3 in size, and 94.4 mg in weight. The experiment data are collected to gain the saturated moisture. The moisture diffusion coefficient (D) of the sample can be calculated by fitting the line of data curve and calculating the slope of the line. The constants (QD and D0) which are in the Arrhenius formula are worded out by using the D [1]. In order to analyze the failure model in the interface between DA and die pad, a new type of system-in-package (SiP) is modeled. The simulation environments are set as the conditions of stored in the room temperature and processed in the SMT assembly production line. The analysis aim is to calculate the humidity distribution and the hygroscopic and thermal stress in these conditions. The results of FEM analysis shows that the max hygromechanical and thermo-mechanical stress appear in the corner of the interface between the Die and the DA, and the corner may be the risk location. The delamination may occur in this place. So it is necessary to analysis the reliability of the interface between the DA and others materials.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75413427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-07-28DOI: 10.1109/ICEPT.2008.4607155
Chen Lei
A new approach based on ant algorithm (AA) and particle swarm optimization (PSO) algorithm is proposed for Multi-chip Module (MCM) interconnect test generation in this paper. Using the pheromone-updating rule and state transition rule, AA generates the initial candidate test vectors. PSO is employed to evolve the candidates generated by AA. The optimized search is guided by the swarm intelligent generated from cooperation and competition among particles of swarm, in order to get the best test vector with the high fault coverage. The international standard MCM benchmark circuit provided by the MCNC group was used to verify the approach. Comparing with the evolutionary algorithms and the deterministic algorithms, experimental results demonstrate that the approach can achieve high fault coverage and short execution time.
{"title":"Study on MCM interconnect test generation using ant algorithm and particle swarm optimization algorithm","authors":"Chen Lei","doi":"10.1109/ICEPT.2008.4607155","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607155","url":null,"abstract":"A new approach based on ant algorithm (AA) and particle swarm optimization (PSO) algorithm is proposed for Multi-chip Module (MCM) interconnect test generation in this paper. Using the pheromone-updating rule and state transition rule, AA generates the initial candidate test vectors. PSO is employed to evolve the candidates generated by AA. The optimized search is guided by the swarm intelligent generated from cooperation and competition among particles of swarm, in order to get the best test vector with the high fault coverage. The international standard MCM benchmark circuit provided by the MCNC group was used to verify the approach. Comparing with the evolutionary algorithms and the deterministic algorithms, experimental results demonstrate that the approach can achieve high fault coverage and short execution time.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74200621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-07-28DOI: 10.1109/ICEPT.2008.4607087
Jie Gao, A. Hu, Ming Li, D. Mao
The effect of crystal orientation on the oxidation failure of pure copper was investigated. XRD results indicated that the oxide film grown on copper surface was mainly composed of Cu2O. The adhesion strength between Cu(110) and its oxidization film was the highest, whereas, the adhesion strength between Cu (311) and its oxidization film was the lowest. SEM observations revealed that the oxide film grown on Cu (311) delaminated from substrate, while the oxide film grown on Cu (100) and Cu (110) did not reveal such a phenomenon. The oxidation rate was investigated by measuring oxide film thickness using the cathodic reduction method. The thickness of oxide film grown on Cu (100) and Cu (110) was thinner than those on Cu (311) and Cu (111). The activation energy for film growth on Cu (100) was calculated to be the highest while that on Cu (311) was the lowest.
{"title":"Influence of crystal orientation on the oxidation failure of copper for IC package","authors":"Jie Gao, A. Hu, Ming Li, D. Mao","doi":"10.1109/ICEPT.2008.4607087","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607087","url":null,"abstract":"The effect of crystal orientation on the oxidation failure of pure copper was investigated. XRD results indicated that the oxide film grown on copper surface was mainly composed of Cu2O. The adhesion strength between Cu(110) and its oxidization film was the highest, whereas, the adhesion strength between Cu (311) and its oxidization film was the lowest. SEM observations revealed that the oxide film grown on Cu (311) delaminated from substrate, while the oxide film grown on Cu (100) and Cu (110) did not reveal such a phenomenon. The oxidation rate was investigated by measuring oxide film thickness using the cathodic reduction method. The thickness of oxide film grown on Cu (100) and Cu (110) was thinner than those on Cu (311) and Cu (111). The activation energy for film growth on Cu (100) was calculated to be the highest while that on Cu (311) was the lowest.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81653268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-07-28DOI: 10.1109/ICEPT.2008.4607067
J. Liu, Yifeng Fu, Teng Wang
As power density in electronic system is approaching a level that conventional cooling methods canpsilat handle, reliability of microsystems is of large concern. In this paper, novel schemes for heat dissipation on electrical components have been reviewed with a strong focus on using carbon nanotubes (CNTs) as cooling fins as a basic approach. With an extraordinary high thermal conductivity, CNT is considered as an ideal material for thermal management in high heat flux microsystems. Fabricated onto a silicon substrate to form microchannels, the CNT based cooling fins show high heat dissipation efficiency. This paper reviews the ongoing research on CNT based microchannel cooler development carried out so far. Both experimental and simulation results are included and presented.
{"title":"Recent progress of Carbon Nanotubes as cooling fins in electronic packaging","authors":"J. Liu, Yifeng Fu, Teng Wang","doi":"10.1109/ICEPT.2008.4607067","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607067","url":null,"abstract":"As power density in electronic system is approaching a level that conventional cooling methods canpsilat handle, reliability of microsystems is of large concern. In this paper, novel schemes for heat dissipation on electrical components have been reviewed with a strong focus on using carbon nanotubes (CNTs) as cooling fins as a basic approach. With an extraordinary high thermal conductivity, CNT is considered as an ideal material for thermal management in high heat flux microsystems. Fabricated onto a silicon substrate to form microchannels, the CNT based cooling fins show high heat dissipation efficiency. This paper reviews the ongoing research on CNT based microchannel cooler development carried out so far. Both experimental and simulation results are included and presented.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82034037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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