Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703363
F. Craciunoiu, A. Dinescu, A. Bragaru
Silicon anodization is an electrochemical process, by which the silicon surface can be oxidized or etched or porosificated, depending on the process parameters. The process results are also depending on the silicon type and doping level. This work reveals the results of the anodization process for p type silicon wafers, having n type islands, with controlled junction width. By applying process techniques specific to p type silicon, it can be observed a silicon 3D structuring inside the diffusion area. So, it is marked the linear graded area specific to the p-n junctions.
{"title":"Silicon 3D structuring by anodization Florea ^Craciunoiu","authors":"F. Craciunoiu, A. Dinescu, A. Bragaru","doi":"10.1109/SMICND.2008.4703363","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703363","url":null,"abstract":"Silicon anodization is an electrochemical process, by which the silicon surface can be oxidized or etched or porosificated, depending on the process parameters. The process results are also depending on the silicon type and doping level. This work reveals the results of the anodization process for p type silicon wafers, having n type islands, with controlled junction width. By applying process techniques specific to p type silicon, it can be observed a silicon 3D structuring inside the diffusion area. So, it is marked the linear graded area specific to the p-n junctions.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83285566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703394
E. Zasavitsky, V. Kantser
Influence of Tl content on superconducting characteristics of thin single crystal wires of semiconductor compound PbTe in the temperature region 0.4 divide 4,2 K and magnetic field up to 1,2 T are investigated. Thallium average concentration variation was 0.001 divide 0.02 at %. Single crystal wires (with diameters d = 5 divide 100 mum) were obtained from solution melt by filling of quartz capillary with the following crystallization of material. It is revealed, that at low temperatures in singlecrystal wires of PbTe transition in the superconducting state is observed. The temperature of transition correlates with impurity concentration (for singlecrystal wires of PbTe at thallium concentration 2% Tc=2,1K). Significant peak-effect is observed in the magnetic field near HC1 and HC2. Mechanisms leading to superconducting transition and anomalous dependence of critical current vs magnetic field in the vicinity of the HC1 and HC2 are discussed. The interpretation of the obtained results is given based on model of an impurity with skipped valence and flux line lattice deformation.
{"title":"Critical parameters in superconductor single crystal wires of doped lead telluride","authors":"E. Zasavitsky, V. Kantser","doi":"10.1109/SMICND.2008.4703394","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703394","url":null,"abstract":"Influence of Tl content on superconducting characteristics of thin single crystal wires of semiconductor compound PbTe<Tl> in the temperature region 0.4 divide 4,2 K and magnetic field up to 1,2 T are investigated. Thallium average concentration variation was 0.001 divide 0.02 at %. Single crystal wires (with diameters d = 5 divide 100 mum) were obtained from solution melt by filling of quartz capillary with the following crystallization of material. It is revealed, that at low temperatures in singlecrystal wires of PbTe<Tl> transition in the superconducting state is observed. The temperature of transition correlates with impurity concentration (for singlecrystal wires of PbTe<Tl> at thallium concentration 2% Tc=2,1K). Significant peak-effect is observed in the magnetic field near HC1 and HC2. Mechanisms leading to superconducting transition and anomalous dependence of critical current vs magnetic field in the vicinity of the HC1 and HC2 are discussed. The interpretation of the obtained results is given based on model of an impurity with skipped valence and flux line lattice deformation.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88454677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703355
C. Tuinea-Bobe, C. Géhin, E. Wallace, D. Dixon, P. Lemoine
Efficient treatment of pressure ulcers require early detection and this has prompted many studies in the development of sensitive interface pressure measurements systems. In this paper we investigate a new strategy based on gold/PDMS stretchable conductors, focusing mostly on issues associated with the preparation and analysis of the required thin films.
{"title":"A flexible conductor for the development of interface pressure measurement system","authors":"C. Tuinea-Bobe, C. Géhin, E. Wallace, D. Dixon, P. Lemoine","doi":"10.1109/SMICND.2008.4703355","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703355","url":null,"abstract":"Efficient treatment of pressure ulcers require early detection and this has prompted many studies in the development of sensitive interface pressure measurements systems. In this paper we investigate a new strategy based on gold/PDMS stretchable conductors, focusing mostly on issues associated with the preparation and analysis of the required thin films.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84886314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703330
B. Șerban, A. K. Sarin Kumar, S. Costea, M. Mihaila, O. Buiu, M. Brezeanu, N. Varachiu, C. Cobianu
The synthesis of two new types of nanocomposite matrices, the first based on polyallylamine (PAA) and aminocarbon nanotubes, the second on polyethyleneimine (PEI) and aminocarbon nanotubes, are reported. The surface acoustic wave (SAW) sensors, coated with the two selected nanocomposites, showed good sensitivities when varying the CO2 concentrations in the range (500-5000) ppm. The sensor sensitivity is larger when using polyethyleneimine aminocarbon nanotubes than in the case when only a pure polyethyleneimine layer is considered for coating.
{"title":"Surface acoustic wave CO2 sensing with polymer-amino carbon nanotube composites","authors":"B. Șerban, A. K. Sarin Kumar, S. Costea, M. Mihaila, O. Buiu, M. Brezeanu, N. Varachiu, C. Cobianu","doi":"10.1109/SMICND.2008.4703330","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703330","url":null,"abstract":"The synthesis of two new types of nanocomposite matrices, the first based on polyallylamine (PAA) and aminocarbon nanotubes, the second on polyethyleneimine (PEI) and aminocarbon nanotubes, are reported. The surface acoustic wave (SAW) sensors, coated with the two selected nanocomposites, showed good sensitivities when varying the CO2 concentrations in the range (500-5000) ppm. The sensor sensitivity is larger when using polyethyleneimine aminocarbon nanotubes than in the case when only a pure polyethyleneimine layer is considered for coating.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86646957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703442
L. Creosteanu, A. Danchiv, G. Brezeanu
This paper presents a systematic design flow for a high side power switch driver circuit. The charge - discharge block is also, analyzed. Protection circuits to keep the power transistor switch in the safe operating area are implemented, simulated and tested.
{"title":"Automotive high side power switch driver circuit","authors":"L. Creosteanu, A. Danchiv, G. Brezeanu","doi":"10.1109/SMICND.2008.4703442","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703442","url":null,"abstract":"This paper presents a systematic design flow for a high side power switch driver circuit. The charge - discharge block is also, analyzed. Protection circuits to keep the power transistor switch in the safe operating area are implemented, simulated and tested.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74492253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703352
F. Udrea, S.Z. Ali, J. Gardner
In this paper we propose novel micro-hotplate arrays for use as nanomaterial-based gas micro sensors. In addition to the better selectivity offered by conventional micro-hotplate arrays, these arrays are more robust, and occupy a relatively small chip area. We present a 2times2 micro-hotplate array as an example, along with its thermal characterisation. In addition we propose arrays connected to each other at wafer level (rather than just within a single chip), that are ideally suited for large volume fabrication of nanomaterial based gas sensors.
{"title":"CMOS micro-hotplate array design for nanomaterial-based gas sensors","authors":"F. Udrea, S.Z. Ali, J. Gardner","doi":"10.1109/SMICND.2008.4703352","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703352","url":null,"abstract":"In this paper we propose novel micro-hotplate arrays for use as nanomaterial-based gas micro sensors. In addition to the better selectivity offered by conventional micro-hotplate arrays, these arrays are more robust, and occupy a relatively small chip area. We present a 2times2 micro-hotplate array as an example, along with its thermal characterisation. In addition we propose arrays connected to each other at wafer level (rather than just within a single chip), that are ideally suited for large volume fabrication of nanomaterial based gas sensors.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77906442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703435
R. Jipa
The paper presents a novel and flexible solution for programming and calibration of the locally clock generator part of the GALS architecture with reduce area and time overhead. The proposed solution introduces an algorithm used to perform the programming and calibration as well as a off-line SW tool that analyse the design requirements and generates the clock parameters coded such way to minimise the computational effort of the HW modules.
{"title":"Dedicated solution for local clock programing in GALS designs","authors":"R. Jipa","doi":"10.1109/SMICND.2008.4703435","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703435","url":null,"abstract":"The paper presents a novel and flexible solution for programming and calibration of the locally clock generator part of the GALS architecture with reduce area and time overhead. The proposed solution introduces an algorithm used to perform the programming and calibration as well as a off-line SW tool that analyse the design requirements and generates the clock parameters coded such way to minimise the computational effort of the HW modules.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76312606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703361
C. Mihailescu, D. Stan, L. Ruta, B. Ion, C. Moldovan, V. Schiopu, M. Simion, R. Gavrila
In this work we report a self-assembled mixt into plat silicon (Si n-type, 10-20 Omegacm) coated with gold deposited by evaporation. The formation of mixed self-assembly monolayers (SAM) was characterized with FTIR-ATR, and cyclic voltammetry techniques. In order to assay the functionality of SAMs prepared for immobilization of high density of functional protein we used different concentrations of BSA in PBS. The protein (BSA) was labeled with Cy3 dye and printed onto coated slides using a microarray printer. The intensity of signal detected, for any one spot, is proportional to the quantity of antigen (BSA) bound on the surface. Those are preliminary experiments in order to test this surface for to immobilize one of the most pathogens Escherichia Coli O157:H7.
{"title":"Mixed-monolayers with alkane thiol on gold as substrates for microarray applications","authors":"C. Mihailescu, D. Stan, L. Ruta, B. Ion, C. Moldovan, V. Schiopu, M. Simion, R. Gavrila","doi":"10.1109/SMICND.2008.4703361","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703361","url":null,"abstract":"In this work we report a self-assembled mixt into plat silicon (Si n-type, 10-20 Omegacm) coated with gold deposited by evaporation. The formation of mixed self-assembly monolayers (SAM) was characterized with FTIR-ATR, and cyclic voltammetry techniques. In order to assay the functionality of SAMs prepared for immobilization of high density of functional protein we used different concentrations of BSA in PBS. The protein (BSA) was labeled with Cy3 dye and printed onto coated slides using a microarray printer. The intensity of signal detected, for any one spot, is proportional to the quantity of antigen (BSA) bound on the surface. Those are preliminary experiments in order to test this surface for to immobilize one of the most pathogens Escherichia Coli O157:H7.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74012517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703441
C. Coetzee, S. Sinha, M. du Plessis, A. Muller
Thorough the current technological trends in RF CMOS transceiver circuits it has become increasingly popular to provide a direct conversion IF receiver. This is done in order to provide a simple solution for many transmission standards i.e. GSM, EDGE, GPS etc. This paper shows that by using simple circuit techniques, the requirements on the digital processing subsystems can be eased. This paper demonstrates the integration of a CMOS GPS receiver in 0.35 mum four metal layer CMOS technology provided by austriamicrosystems. The receiver, in simulation, achieves an operational double side bandwidth of 2.046 MHz, for a centre frequency of 1.57542 GHz.
{"title":"A 0.35 μm CMOS GPS receiver","authors":"C. Coetzee, S. Sinha, M. du Plessis, A. Muller","doi":"10.1109/SMICND.2008.4703441","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703441","url":null,"abstract":"Thorough the current technological trends in RF CMOS transceiver circuits it has become increasingly popular to provide a direct conversion IF receiver. This is done in order to provide a simple solution for many transmission standards i.e. GSM, EDGE, GPS etc. This paper shows that by using simple circuit techniques, the requirements on the digital processing subsystems can be eased. This paper demonstrates the integration of a CMOS GPS receiver in 0.35 mum four metal layer CMOS technology provided by austriamicrosystems. The receiver, in simulation, achieves an operational double side bandwidth of 2.046 MHz, for a centre frequency of 1.57542 GHz.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81230429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703374
A. Lucibello, G. de Angelis, E. Proietti, R. Marcelli, G. Bartolucci
Coplanar wave-guide grounded lines (CPWG) have been designed, realized by micro-machining of high resistivity silicon wafers and tested up to 40 GHz. Different configurations have been compared between them by changing the dimensions of the micro-machined via-holes used for the ground connection, as well as their number and separation, to get the optimal electrical matching conditions. Wide-band matching and losses as low as 0.1-0.2 dB/mm have been obtained within the 40 GHz range, in agreement with the predicted behaviour.
{"title":"Technology and test of coplanar grounded wave-guides on micro-machined Si wafers","authors":"A. Lucibello, G. de Angelis, E. Proietti, R. Marcelli, G. Bartolucci","doi":"10.1109/SMICND.2008.4703374","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703374","url":null,"abstract":"Coplanar wave-guide grounded lines (CPWG) have been designed, realized by micro-machining of high resistivity silicon wafers and tested up to 40 GHz. Different configurations have been compared between them by changing the dimensions of the micro-machined via-holes used for the ground connection, as well as their number and separation, to get the optimal electrical matching conditions. Wide-band matching and losses as low as 0.1-0.2 dB/mm have been obtained within the 40 GHz range, in agreement with the predicted behaviour.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87375436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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