Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703356
M. Avram, C. Iliescu, M. Volmer, F. S. Iliescu, A. Avram
In this work we present a study of the interaction between the magnetic particles used in biological applications and the GMR sensor. The fractional change in resistance, and hence the sensitivity, will be maximized by matching, as far as possible, the size of the sensor to the size of the beads and by carefully positioning the beads over the sensor. We found, by micromagnetic simulations, that the amount of the surface coverage with magnetic particles may affect the magnetization curve of the sensor and will change the field dependence of his GMR response.
{"title":"Microfluidic device for biocells manipulation and measurement","authors":"M. Avram, C. Iliescu, M. Volmer, F. S. Iliescu, A. Avram","doi":"10.1109/SMICND.2008.4703356","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703356","url":null,"abstract":"In this work we present a study of the interaction between the magnetic particles used in biological applications and the GMR sensor. The fractional change in resistance, and hence the sensitivity, will be maximized by matching, as far as possible, the size of the sensor to the size of the beads and by carefully positioning the beads over the sensor. We found, by micromagnetic simulations, that the amount of the surface coverage with magnetic particles may affect the magnetization curve of the sensor and will change the field dependence of his GMR response.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"47 1","pages":"159-162"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88335076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703321
A. Rusu, M. Badila, C. Bulucea
This paper considers the gate-controlled diode as a device performing both analog and digital functions. This behavior is encountered in the breakdown regime of the device, where the transfer characteristic has slopes in a wide range, from a cvasilinear to a collapse region. The form of this characteristic depends on the electrode that is considered as reference. Theoretical models and experimental measurements demonstrate these assumptions.
{"title":"Generalised DC characteristics of gate-controlled diodes in avalanche breakdown regime","authors":"A. Rusu, M. Badila, C. Bulucea","doi":"10.1109/SMICND.2008.4703321","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703321","url":null,"abstract":"This paper considers the gate-controlled diode as a device performing both analog and digital functions. This behavior is encountered in the breakdown regime of the device, where the transfer characteristic has slopes in a wide range, from a cvasilinear to a collapse region. The form of this characteristic depends on the electrode that is considered as reference. Theoretical models and experimental measurements demonstrate these assumptions.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"14 1","pages":"27-30"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87778886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703349
C. Kusko
In this work we have numerically investigated the electromagnetic response of a 2-dimensional nanostructured material with a Drude dispersive dielectric constant. The system consists in a square lattice of rings with a small positive dielectric constant realized in a material with negative permittivity. For certain frequencies of the exciting electromagnetic field, the nanostructured system presents a resonance which leads to a Lorentz type response. By performing finite difference time domain (FDTD) simulations and S-parameter calculations we have calculated the effective permittivity and permeability for this system.
{"title":"Electromagnetic response of a structured drude material; a numerical study","authors":"C. Kusko","doi":"10.1109/SMICND.2008.4703349","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703349","url":null,"abstract":"In this work we have numerically investigated the electromagnetic response of a 2-dimensional nanostructured material with a Drude dispersive dielectric constant. The system consists in a square lattice of rings with a small positive dielectric constant realized in a material with negative permittivity. For certain frequencies of the exciting electromagnetic field, the nanostructured system presents a resonance which leads to a Lorentz type response. By performing finite difference time domain (FDTD) simulations and S-parameter calculations we have calculated the effective permittivity and permeability for this system.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"1 1","pages":"137-140"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77198587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703368
M. Simion, L. Ruta, I. Kleps, C. Mihailescu, A. Bragaru, M. Miu, T. Ignat
The chemistry of slide substrates used in microarray technology is important, since it determines the spot morphology, signal intensity, low carry over and low evaporation rate. In this paper the experiments developed one substrate type - porous silicon as base for micro arrays with a gold layer film deposit on top. It was study two gold texture in order to find the best report between signal intensity and spot morphology. The experiments reveal that: (i) porous silicon substrate for both functionalization methods assure spots uniformity and a good relationship between signal intensity and solution concentration; (ii) it was observed bonds saturation for high concentrations for both types of samples.
{"title":"Biohybrid surface preparation for protein/DNA microarray applications","authors":"M. Simion, L. Ruta, I. Kleps, C. Mihailescu, A. Bragaru, M. Miu, T. Ignat","doi":"10.1109/SMICND.2008.4703368","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703368","url":null,"abstract":"The chemistry of slide substrates used in microarray technology is important, since it determines the spot morphology, signal intensity, low carry over and low evaporation rate. In this paper the experiments developed one substrate type - porous silicon as base for micro arrays with a gold layer film deposit on top. It was study two gold texture in order to find the best report between signal intensity and spot morphology. The experiments reveal that: (i) porous silicon substrate for both functionalization methods assure spots uniformity and a good relationship between signal intensity and solution concentration; (ii) it was observed bonds saturation for high concentrations for both types of samples.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"1 1","pages":"201-204"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82426084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703348
C. Florin, C. Tibeica, M. Purica
In this paper one type of an electrostatic actuated micromirror structure was simulated using Coventorware software, taking into account the material properties and structure geometry in order to optimize the structure. A characteristic response (displacement versus voltage) for simulated structure is the hysteresis loop of displacement. By reducing the length off the bottom electrode and also the length of the upper isolating layer we can obtain larger displacement of 12 mum. The optimized mirror reflective surface has a size of 120 mum times 120 mum.
本文利用Coventorware软件对一种静电驱动微镜结构进行了仿真，考虑了材料特性和结构几何，对结构进行了优化。模拟结构的一个特征响应(位移对电压)是位移的迟滞回线。通过减少底部电极的长度和上部隔离层的长度，我们可以获得更大的12 μ m的位移。优化后的镜面反射面尺寸为120 μ m × 120 μ m。
{"title":"Design and optimization of an electrostatic actuated micromirror with isolated bottom electrode on silicon substrate","authors":"C. Florin, C. Tibeica, M. Purica","doi":"10.1109/SMICND.2008.4703348","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703348","url":null,"abstract":"In this paper one type of an electrostatic actuated micromirror structure was simulated using Coventorware software, taking into account the material properties and structure geometry in order to optimize the structure. A characteristic response (displacement versus voltage) for simulated structure is the hysteresis loop of displacement. By reducing the length off the bottom electrode and also the length of the upper isolating layer we can obtain larger displacement of 12 mum. The optimized mirror reflective surface has a size of 120 mum times 120 mum.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"31 1","pages":"133-136"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73443045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703343
L. Sirbu, V. Sergentu, V. Ursaki, I. Tiginyanu, G. Piredda, R. Boyd
Surface plasmon resonance is studied for Ag nanoparticles electrochemically deposited on bulk GaP substrates and inside porous GaP templates. The size and density of Ag nanoparticles are controlled by the conditions of electrochemical deposition and thermal processing. The experimental data are analyzed in the frame of the Drude theory taking into account the parameters of the metallic nanoparticles and the morphology of the porous template. It is shown that porous templates provide wide possibilities for the control of the surface plasmon resonance frequency.
{"title":"Surface plasmon resonance in Ag nanoparticles deposited inside porous GaP templates","authors":"L. Sirbu, V. Sergentu, V. Ursaki, I. Tiginyanu, G. Piredda, R. Boyd","doi":"10.1109/SMICND.2008.4703343","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703343","url":null,"abstract":"Surface plasmon resonance is studied for Ag nanoparticles electrochemically deposited on bulk GaP substrates and inside porous GaP templates. The size and density of Ag nanoparticles are controlled by the conditions of electrochemical deposition and thermal processing. The experimental data are analyzed in the frame of the Drude theory taking into account the parameters of the metallic nanoparticles and the morphology of the porous template. It is shown that porous templates provide wide possibilities for the control of the surface plasmon resonance frequency.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"9 1","pages":"113-116"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74940374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703399
V. Braic, M. Balaceanu, M. Braic
Extreme UV lithography is one of the most favoured options for the next generation of lithography systems, being considered as one of the keys of the 50 nm technology node. ZrN/TiN, multi-layered coatings for mirrors with high reflectivity at grazing incidence for EUV radiation (13.5) are proposed as coatings for the collection mirror in an EUVL system. These films were deposited on different substrates (Si, glass, and different metals) by d.c. magnetron sputtering and characterized by XRD, AES, EDX, AFM and EUV reflectivity using synchrotron radiation.
{"title":"Grazing incidence mirrors for EUV lithography","authors":"V. Braic, M. Balaceanu, M. Braic","doi":"10.1109/SMICND.2008.4703399","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703399","url":null,"abstract":"Extreme UV lithography is one of the most favoured options for the next generation of lithography systems, being considered as one of the keys of the 50 nm technology node. ZrN/TiN, multi-layered coatings for mirrors with high reflectivity at grazing incidence for EUV radiation (13.5) are proposed as coatings for the collection mirror in an EUVL system. These films were deposited on different substrates (Si, glass, and different metals) by d.c. magnetron sputtering and characterized by XRD, AES, EDX, AFM and EUV reflectivity using synchrotron radiation.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"227 1","pages":"267-270"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76876632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703451
M. Kusko, A. Avram, D. Apostol
In this paper are presented the results on design, simulation and fabrication of Fresnel lenses. In the theoretical section the design concepts and BPM simulations results are presented, and in the experimental section details about controlled RIE etching process of various materials are provided. Much attention is dedicated to find the etching rate corresponding to etching process parameters and substrate type.
{"title":"Design and fabrication of Fresnel lenses","authors":"M. Kusko, A. Avram, D. Apostol","doi":"10.1109/SMICND.2008.4703451","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703451","url":null,"abstract":"In this paper are presented the results on design, simulation and fabrication of Fresnel lenses. In the theoretical section the design concepts and BPM simulations results are presented, and in the experimental section details about controlled RIE etching process of various materials are provided. Much attention is dedicated to find the etching rate corresponding to etching process parameters and substrate type.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"67 1","pages":"445-448"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79836456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703450
S. Burtescu, C. Parvulescu, F. Babarada, E. Manea
This paper presents the solar cells fabrication on multicrystalline silicon substrate with maximum efficiency of 13% by laboratory technology and main equipments used to characterization of such devices. The main objective was the minimizing the production cost maintaining the device performances. For these reasons the general concept of the technology consists of maximum seven steps, was used multicrystalline silicon substrate, the front surface solar cell was texturized in order to reduce the light reflectivity and the wafer back side was p+ diffused in order to have low series resistance.
{"title":"The laboratory technology of crystalline silicon solar cells","authors":"S. Burtescu, C. Parvulescu, F. Babarada, E. Manea","doi":"10.1109/SMICND.2008.4703450","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703450","url":null,"abstract":"This paper presents the solar cells fabrication on multicrystalline silicon substrate with maximum efficiency of 13% by laboratory technology and main equipments used to characterization of such devices. The main objective was the minimizing the production cost maintaining the device performances. For these reasons the general concept of the technology consists of maximum seven steps, was used multicrystalline silicon substrate, the front surface solar cell was texturized in order to reduce the light reflectivity and the wafer back side was p+ diffused in order to have low series resistance.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"27 1","pages":"441-444"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80170761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-09DOI: 10.1109/SMICND.2008.4703331
M. Dragoman, D. Dragoman
The characteristics of the nanotube radio are improved considering new configurations based on quantum tunneling. In this way, the new invented nanotube radio could be tuned electrically in the entire FM or AM bands and biased with miniaturized batteries.
{"title":"The carbon nanotube radio","authors":"M. Dragoman, D. Dragoman","doi":"10.1109/SMICND.2008.4703331","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703331","url":null,"abstract":"The characteristics of the nanotube radio are improved considering new configurations based on quantum tunneling. In this way, the new invented nanotube radio could be tuned electrically in the entire FM or AM bands and biased with miniaturized batteries.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"89 1","pages":"77-80"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77612183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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