Pub Date : 2002-08-07DOI: 10.1109/ASMC.2002.1001595
B.K. Best
This article describes the successful migration of The Poseidon MES from IBM's OS/2 Warp Operating System to IBM's AIX/Unix Operating System. The Poseidon System was initially developed by IBM/ITS (an IBM Japan subsidiary) and installed at Dominion Semiconductor (DSC) in May of 1997. This MES was developed for OS/2 and was customized to meet DSC's Manufacturing and Engineering startup requirements. It became evident that the MES was not easily extendable while running on OS/2. Therefore, DSC decided to migrate the MES to an operating system (AIX/Unix) that was supported by 3/sup rd/ party vendor applications that did not support OS/2. The MES Development Team's primary focus was to extend the functionality of the MES to integrate leading-edge manufacturing methodologies, such as Advanced Process Control and Real-Time Dispatching. The MES is now postured to take advantage of new and emerging technologies, such as the following: Java - for program portability; XML - for data portability; Internet protocols - for data transmission and communication control; Browser - for user interface; HTTP Server - for an HTTP Server with proxy and caching.
{"title":"Manufacturing Execution System (MES) operating system migration to integrate leading-edge methodologies and leverage emerging technologies","authors":"B.K. Best","doi":"10.1109/ASMC.2002.1001595","DOIUrl":"https://doi.org/10.1109/ASMC.2002.1001595","url":null,"abstract":"This article describes the successful migration of The Poseidon MES from IBM's OS/2 Warp Operating System to IBM's AIX/Unix Operating System. The Poseidon System was initially developed by IBM/ITS (an IBM Japan subsidiary) and installed at Dominion Semiconductor (DSC) in May of 1997. This MES was developed for OS/2 and was customized to meet DSC's Manufacturing and Engineering startup requirements. It became evident that the MES was not easily extendable while running on OS/2. Therefore, DSC decided to migrate the MES to an operating system (AIX/Unix) that was supported by 3/sup rd/ party vendor applications that did not support OS/2. The MES Development Team's primary focus was to extend the functionality of the MES to integrate leading-edge manufacturing methodologies, such as Advanced Process Control and Real-Time Dispatching. The MES is now postured to take advantage of new and emerging technologies, such as the following: Java - for program portability; XML - for data portability; Internet protocols - for data transmission and communication control; Browser - for user interface; HTTP Server - for an HTTP Server with proxy and caching.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89605402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ASMC.2002.1001573
R. Qiu, R. Burda, Robert Chylak
A proven successful strategy to improve the responsiveness of manufacturing systems is to continuously enhance shop floor work-in-process (WIP) management. It is well known that a centralized WIP management system results in inflexibility and poor scalability for a manufacturing system on the shop floor. This article presents an easily manageable and well-distributed WIP management system to address these issues for an advanced semiconductor manufacturing system where WIP control plays a critical role. Multiple spawned WIP control modules from a central server are synchronized using the concept of Virtual Production Lines. By doing so the modularization of both software and hardware on the shop floor is realized. The manufacturing system governed by the proposed distributed WIP control system is flexible, re-configurable, and scaleable. Therefore, when changes occur on equipment or manufacturing cells, the adjustment will be limited within the relevant line, while the impact onto the rest of the system is very much limited. Because the change can be made easily, quickly, and cost-effectively, the advanced semiconductor manufacturing system using this distributed WIP control system thus becomes much more competitive.
{"title":"Distributed WIP control in advanced semiconductor manufacturing","authors":"R. Qiu, R. Burda, Robert Chylak","doi":"10.1109/ASMC.2002.1001573","DOIUrl":"https://doi.org/10.1109/ASMC.2002.1001573","url":null,"abstract":"A proven successful strategy to improve the responsiveness of manufacturing systems is to continuously enhance shop floor work-in-process (WIP) management. It is well known that a centralized WIP management system results in inflexibility and poor scalability for a manufacturing system on the shop floor. This article presents an easily manageable and well-distributed WIP management system to address these issues for an advanced semiconductor manufacturing system where WIP control plays a critical role. Multiple spawned WIP control modules from a central server are synchronized using the concept of Virtual Production Lines. By doing so the modularization of both software and hardware on the shop floor is realized. The manufacturing system governed by the proposed distributed WIP control system is flexible, re-configurable, and scaleable. Therefore, when changes occur on equipment or manufacturing cells, the adjustment will be limited within the relevant line, while the impact onto the rest of the system is very much limited. Because the change can be made easily, quickly, and cost-effectively, the advanced semiconductor manufacturing system using this distributed WIP control system thus becomes much more competitive.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84208850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ASMC.2002.1001631
D. Yao, C. Blouin, M. Cavanaugh, G. Boldman, B. Alvarez, S. Miraglia, L. Hungerford
The reporting and understanding of materials spending is essential for a cost-effective manufacturing facility. At IBM in Essex Junction, Vermont, a Spare Parts Expense Management System is being used to manage and control spending. The system goes beyond simply reporting spare parts spending. Combined with a cost model developed by the same team, this system results in an integrated approach that provides first-order analysis and metrics of spending by part number and tool. The system also provides aggregate analysis and metrics showing spending by tool group and process type. Second-order analysis of spending provides an understanding of spending by wafer type or "technology". This second-order data also enables dynamic target setting. Data is communicated via daily meetings, e-mail reports, and a web-based reporting tool. This approach ensures active engagement of the entire maintenance team, from technician through senior management, and provides the team with the analytical tools necessary to isolate opportunities for spending reduction.
{"title":"Spare parts expense management system [semiconductor manufacturing]","authors":"D. Yao, C. Blouin, M. Cavanaugh, G. Boldman, B. Alvarez, S. Miraglia, L. Hungerford","doi":"10.1109/ASMC.2002.1001631","DOIUrl":"https://doi.org/10.1109/ASMC.2002.1001631","url":null,"abstract":"The reporting and understanding of materials spending is essential for a cost-effective manufacturing facility. At IBM in Essex Junction, Vermont, a Spare Parts Expense Management System is being used to manage and control spending. The system goes beyond simply reporting spare parts spending. Combined with a cost model developed by the same team, this system results in an integrated approach that provides first-order analysis and metrics of spending by part number and tool. The system also provides aggregate analysis and metrics showing spending by tool group and process type. Second-order analysis of spending provides an understanding of spending by wafer type or \"technology\". This second-order data also enables dynamic target setting. Data is communicated via daily meetings, e-mail reports, and a web-based reporting tool. This approach ensures active engagement of the entire maintenance team, from technician through senior management, and provides the team with the analytical tools necessary to isolate opportunities for spending reduction.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76727325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ASMC.2002.1001596
A. Henning, N. Mourlas, S. Metz, A. Zias
Process applications in the semiconductor industry require increasing levels of performance in pressure measurement and control. In addition, measurement and control of process mass flows are moving toward pressure-based mass flow controllers (MFCs). This work reports the development of a MEMS-based pressure sensor with the requisite performance for rigorous pressure and flow sensing sensing. The pressure sensing element consists of two capacitor plates, whose separation varies as a function of the radial distance from the center of the structure. The bottom capacitor plate is mechanically fixed, while the upper plate is a flexible silicon membrane. A variable separation between the plates is introduced by locating a hub in the center of the structure, and stretching the membrane over this structure. The theoretical principles, fabrication and performance of the structure are discussed.
{"title":"A MEMS-based, high-sensitivity pressure sensor for ultraclean semiconductor applications","authors":"A. Henning, N. Mourlas, S. Metz, A. Zias","doi":"10.1109/ASMC.2002.1001596","DOIUrl":"https://doi.org/10.1109/ASMC.2002.1001596","url":null,"abstract":"Process applications in the semiconductor industry require increasing levels of performance in pressure measurement and control. In addition, measurement and control of process mass flows are moving toward pressure-based mass flow controllers (MFCs). This work reports the development of a MEMS-based pressure sensor with the requisite performance for rigorous pressure and flow sensing sensing. The pressure sensing element consists of two capacitor plates, whose separation varies as a function of the radial distance from the center of the structure. The bottom capacitor plate is mechanically fixed, while the upper plate is a flexible silicon membrane. A variable separation between the plates is introduced by locating a hub in the center of the structure, and stretching the membrane over this structure. The theoretical principles, fabrication and performance of the structure are discussed.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76117061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ASMC.2002.1001589
Mei H. Sun, C. Gabriel
It is well known that wafer temperature has significant impact on plasma etching performance. Instability of (peak) wafer temperatures during process can be linked to such issues as post-metal etch residues, undercut or sloping sidewall profiles and inconsistent photoresist selectivity. Direct wafer temperature measurements can yield valuable diagnostic information. This information can be used to characterize the process as well as to improve process control. This paper presents two direct wafer measurement techniques which when used in combination can be powerful tools for chamber diagnostics, tool to tool matching, as well as process control in a production environment. Real time, in situ wafer temperature measurement using a thermal optical system is used to understand the effect of process parameters such as backside He cooling, RF power and gas flows on wafer temperature and temperature uniformity. This data is then correlated to measurements from a novel technique employing arrays of peak temperature indicators mounted on a single-use-instrumented wafer. The latter technique is ideal for quick chamber qualifications and day to day process control while the former can be used for more detailed chamber diagnostics and analysis of the thermal cycle during the etch process.
{"title":"Direct wafer temperature measurements for etch chamber diagnostics and process control","authors":"Mei H. Sun, C. Gabriel","doi":"10.1109/ASMC.2002.1001589","DOIUrl":"https://doi.org/10.1109/ASMC.2002.1001589","url":null,"abstract":"It is well known that wafer temperature has significant impact on plasma etching performance. Instability of (peak) wafer temperatures during process can be linked to such issues as post-metal etch residues, undercut or sloping sidewall profiles and inconsistent photoresist selectivity. Direct wafer temperature measurements can yield valuable diagnostic information. This information can be used to characterize the process as well as to improve process control. This paper presents two direct wafer measurement techniques which when used in combination can be powerful tools for chamber diagnostics, tool to tool matching, as well as process control in a production environment. Real time, in situ wafer temperature measurement using a thermal optical system is used to understand the effect of process parameters such as backside He cooling, RF power and gas flows on wafer temperature and temperature uniformity. This data is then correlated to measurements from a novel technique employing arrays of peak temperature indicators mounted on a single-use-instrumented wafer. The latter technique is ideal for quick chamber qualifications and day to day process control while the former can be used for more detailed chamber diagnostics and analysis of the thermal cycle during the etch process.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87642901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ASMC.2002.1001620
L. Levit, J. Montoya
FOUPs are constructed from insulative plastics. As such, they take on charges of multiple kilovolts and carry large electric fields with them. Because of the large size of the FOUP, appreciable fields extend for a distance of >30 cm from the FOUP and can reach many objects withing the cleanroom. When the fields intersect an ungrounded or poorly grounded conductor, metal-to-metal discharges can occur. These discharges, in turn radiate nanosecond pulses (transient EMI) which can disrupt robotics. This paper details the measurement of such transients in an operating 300 mm fab. The results show that EMI is created by manual handling of FOUPs but that charged FOUPs moving in an overhead track are a much greater cause of EMI with the potential for robotic difficulties.
{"title":"Transporting FOUPs as a driver for ESD-induced EMI","authors":"L. Levit, J. Montoya","doi":"10.1109/ASMC.2002.1001620","DOIUrl":"https://doi.org/10.1109/ASMC.2002.1001620","url":null,"abstract":"FOUPs are constructed from insulative plastics. As such, they take on charges of multiple kilovolts and carry large electric fields with them. Because of the large size of the FOUP, appreciable fields extend for a distance of >30 cm from the FOUP and can reach many objects withing the cleanroom. When the fields intersect an ungrounded or poorly grounded conductor, metal-to-metal discharges can occur. These discharges, in turn radiate nanosecond pulses (transient EMI) which can disrupt robotics. This paper details the measurement of such transients in an operating 300 mm fab. The results show that EMI is created by manual handling of FOUPs but that charged FOUPs moving in an overhead track are a much greater cause of EMI with the potential for robotic difficulties.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87943559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ASMC.2002.1001627
C. Weber
A numerical model that identifies the high-leverage variables associated with profitability in semiconductor manufacturing is presented. Varying the parameters of the model demonstrates that a rapid yield-learning rate determines profitability more than any other factor does. Factors such as ramping up early, adding fab capacity, depressing the terminal fault density, and shrinking die size all yield diminishing returns. The model also suggests that preparations in the early stages of process development are the key to successful yield learning.
{"title":"Yield learning and the sources of profitability in semiconductor manufacturing and process development","authors":"C. Weber","doi":"10.1109/ASMC.2002.1001627","DOIUrl":"https://doi.org/10.1109/ASMC.2002.1001627","url":null,"abstract":"A numerical model that identifies the high-leverage variables associated with profitability in semiconductor manufacturing is presented. Varying the parameters of the model demonstrates that a rapid yield-learning rate determines profitability more than any other factor does. Factors such as ramping up early, adding fab capacity, depressing the terminal fault density, and shrinking die size all yield diminishing returns. The model also suggests that preparations in the early stages of process development are the key to successful yield learning.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74252131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Residual metal inspection is an integral part of CMP manufacturing processes. This can be accomplished by adapting the existing YE inspection tools or microscopes. The use of Front Opening Unified Pod (FOUP) to house the wafers in 300 mm manufacturing offers unique challenges for wafer handling which necessitates the use of automated inspection procedures. These automated inspection procedures must not impede the flow of production material while achieving 100% inspection, and also have increased reliability compared to the existing inspection technologies. Ideally, these inspection procedures should be integrated into a feedback loop for further processing control. In this study, an existing particle monitoring technology for both bare and patterned wafers has been adapted for residual metal inspection. This is a new and unique application for post-metal CMP residue metal detection, which replaces the microscope visual inspection process. This technique uses a previously scanned 'golden wafer' to create the inspection recipe for a given pattern density and metal thickness, which is used to inspect other similarly processed product. This technique can be integrated to a CMP process tool, which can lead to significant reduction in cycle time and improved inspection efficiency.
{"title":"Automated residual metal inspection","authors":"R. Tiwari, J. Strupp, P. Terala, D. Shoham","doi":"10.1117/12.475643","DOIUrl":"https://doi.org/10.1117/12.475643","url":null,"abstract":"Residual metal inspection is an integral part of CMP manufacturing processes. This can be accomplished by adapting the existing YE inspection tools or microscopes. The use of Front Opening Unified Pod (FOUP) to house the wafers in 300 mm manufacturing offers unique challenges for wafer handling which necessitates the use of automated inspection procedures. These automated inspection procedures must not impede the flow of production material while achieving 100% inspection, and also have increased reliability compared to the existing inspection technologies. Ideally, these inspection procedures should be integrated into a feedback loop for further processing control. In this study, an existing particle monitoring technology for both bare and patterned wafers has been adapted for residual metal inspection. This is a new and unique application for post-metal CMP residue metal detection, which replaces the microscope visual inspection process. This technique uses a previously scanned 'golden wafer' to create the inspection recipe for a given pattern density and metal thickness, which is used to inspect other similarly processed product. This technique can be integrated to a CMP process tool, which can lead to significant reduction in cycle time and improved inspection efficiency.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74415841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wen-Bin Yan, C. Krusen, J. Dudek, K. Lehmann, P. Rabinowitz
The first commercial analyzer based on cavity ringdown spectroscopy (CRDS) was developed to perform fast and reliable analysis of ultra trace gas impurities. The complete analytical system, the MTO-1000, is capable of measuring moisture from 200 parts-per-trillion (PPT) to 5 ppm. Trace moisture test data will be presented to demonstrate the speed of response, sensitivity, and accuracy of the analyzer.
{"title":"Trace gas analysis by diode laser cavity ring-down spectroscopy","authors":"Wen-Bin Yan, C. Krusen, J. Dudek, K. Lehmann, P. Rabinowitz","doi":"10.1117/12.462654","DOIUrl":"https://doi.org/10.1117/12.462654","url":null,"abstract":"The first commercial analyzer based on cavity ringdown spectroscopy (CRDS) was developed to perform fast and reliable analysis of ultra trace gas impurities. The complete analytical system, the MTO-1000, is capable of measuring moisture from 200 parts-per-trillion (PPT) to 5 ppm. Trace moisture test data will be presented to demonstrate the speed of response, sensitivity, and accuracy of the analyzer.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87834041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-01-01DOI: 10.1109/ASMC.2002.1001562
The following topics are dealt with: advanced FEOL processing; fab dynamics; yield enhancement tools and methods; process control methodology; resource productivity management; yield modeling, analysis and enhancement; defect-free manufacturing; contamination-free manufacturing; cost management methodologies; advanced BEOL processing; advanced metrology.
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