Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939998
F. Khaja, H. Gossmann, B. Colombeau, T. Thanigaivelan
One of the challenges for bulk-Si FinFET is forming the junction isolation at the 14nm node and beyond. As the fins are scaled, source-drain punch-through can occur, which causes large leakage currents. A punch-through stop (PTS) layer/structure at the bottom of the fin is introduced to suppress this sub-fin leakage current. However, the introduction of PTS may result in dopant back diffusion into the active fin region from the PTS implant(s). This may result in device shift and variability. In this paper, we investigated novel approaches to reduce dopant back diffusion into the active fin region. Specifically, we studied the impact of (1) Carbon co-implants to block the dopant up-diffusion into the active fin region, (2) implants with heavy species at room temperature, and (3) thermal implants with heavy species. Results show that a lower channel concentration is achieved with antimony. These approaches can be extended to develop junction isolation for bulk FinFETs for 10nm and beyond.
{"title":"Bulk FinFET junction isolation by heavy species and thermal implants","authors":"F. Khaja, H. Gossmann, B. Colombeau, T. Thanigaivelan","doi":"10.1109/IIT.2014.6939998","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939998","url":null,"abstract":"One of the challenges for bulk-Si FinFET is forming the junction isolation at the 14nm node and beyond. As the fins are scaled, source-drain punch-through can occur, which causes large leakage currents. A punch-through stop (PTS) layer/structure at the bottom of the fin is introduced to suppress this sub-fin leakage current. However, the introduction of PTS may result in dopant back diffusion into the active fin region from the PTS implant(s). This may result in device shift and variability. In this paper, we investigated novel approaches to reduce dopant back diffusion into the active fin region. Specifically, we studied the impact of (1) Carbon co-implants to block the dopant up-diffusion into the active fin region, (2) implants with heavy species at room temperature, and (3) thermal implants with heavy species. Results show that a lower channel concentration is achieved with antimony. These approaches can be extended to develop junction isolation for bulk FinFETs for 10nm and beyond.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"70 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89668999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939957
G. Fuse, M. Kuriyama, M. Sugitani, M. Tanaka
The mechanism of helium-based plasma doping (He-PD) was investigated. It is found out for the first time that the mechanism is that dopant atoms are knocked-on by a huge number of helium atoms, born out by the results of experiments of helium plasma irradiation following the ultra-low energy implantations. Boron and phosphorous atoms are knocked-on to the almost same depth. Arsenic ions are also evaluated and deeper depth doping than boron and phosphorous is observed. Additionally, it is not necessarily the case that the profile by the He-PD shows steeper abruptness than conventional ion implantation but it is limited to the low power condition. The moving distance by helium irradiation does not depend on atom mass but it correlates linearly to the atom radius. Large atoms such as arsenic moves more than smaller atoms like boron and phosphorous.
{"title":"Doping mechanism of helium-based plasma","authors":"G. Fuse, M. Kuriyama, M. Sugitani, M. Tanaka","doi":"10.1109/IIT.2014.6939957","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939957","url":null,"abstract":"The mechanism of helium-based plasma doping (He-PD) was investigated. It is found out for the first time that the mechanism is that dopant atoms are knocked-on by a huge number of helium atoms, born out by the results of experiments of helium plasma irradiation following the ultra-low energy implantations. Boron and phosphorous atoms are knocked-on to the almost same depth. Arsenic ions are also evaluated and deeper depth doping than boron and phosphorous is observed. Additionally, it is not necessarily the case that the profile by the He-PD shows steeper abruptness than conventional ion implantation but it is limited to the low power condition. The moving distance by helium irradiation does not depend on atom mass but it correlates linearly to the atom radius. Large atoms such as arsenic moves more than smaller atoms like boron and phosphorous.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"17 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87348157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939977
V. Chavva
A number of schemes have been proposed in the literature to getter the metal impurities, which are detrimental to the device performance and yield (DPY), in silicon. These schemes vary from segregation based gettering, to extended defect clusters to magic denuded zones. While some of these are empirical and others being expensive to implement, they often contradict with each other. It is the purpose of this paper to propose a scheme that is simple and inexpensive yet firmly based on the principles governing effective gettering of the metal impurities. Further implant capability for sub-micron technology nodes is also discussed.
{"title":"Gettering of the metal impurities in image sensors: An evaluation of heated carbon implants","authors":"V. Chavva","doi":"10.1109/IIT.2014.6939977","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939977","url":null,"abstract":"A number of schemes have been proposed in the literature to getter the metal impurities, which are detrimental to the device performance and yield (DPY), in silicon. These schemes vary from segregation based gettering, to extended defect clusters to magic denuded zones. While some of these are empirical and others being expensive to implement, they often contradict with each other. It is the purpose of this paper to propose a scheme that is simple and inexpensive yet firmly based on the principles governing effective gettering of the metal impurities. Further implant capability for sub-micron technology nodes is also discussed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"85 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84038148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939997
F. Benistant, Jacquelyn Phang, T. Hermann, E. Bazizi, A. Zaka, Jiang Liu
The complexity of the physics involved in the fabrication of 3D advanced nano-devices, promotes the daily use of advanced simulation tools. TCAD will be needed not only to optimize the transistors and support the device and process integration teams, but also to understand the new materials impact on the transistor performance. To achieve such goal, new simulation paradigms are required, affecting the way TCAD is used. Actually, the 3D TCAD, already used for silicon nodes, faces a limitation of present continuum tools for process and device simulations. The constant reduction of the transistor dimensions and the point defects-dopants interaction with multiple interfaces make Kinetic Monte Carlo a suitable tool for predictive 3D process modeling. On the device side, the 3D confinement of the device and the discrete doping profiles require accurate modeling of the scattering mechanisms in the silicon channel which makes 3D Monte Carlo simulation attractive However, for the simulation of new materials in the channel and source/drain of the Finfet, 3D Monte Carlo simulation becomes mandatory for the transport modeling. In this paper, we will review these different aspects of the TCAD needed for the 3D Tri-gate devices.
{"title":"TCAD Modeling for next generation CMOS devices","authors":"F. Benistant, Jacquelyn Phang, T. Hermann, E. Bazizi, A. Zaka, Jiang Liu","doi":"10.1109/IIT.2014.6939997","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939997","url":null,"abstract":"The complexity of the physics involved in the fabrication of 3D advanced nano-devices, promotes the daily use of advanced simulation tools. TCAD will be needed not only to optimize the transistors and support the device and process integration teams, but also to understand the new materials impact on the transistor performance. To achieve such goal, new simulation paradigms are required, affecting the way TCAD is used. Actually, the 3D TCAD, already used for silicon nodes, faces a limitation of present continuum tools for process and device simulations. The constant reduction of the transistor dimensions and the point defects-dopants interaction with multiple interfaces make Kinetic Monte Carlo a suitable tool for predictive 3D process modeling. On the device side, the 3D confinement of the device and the discrete doping profiles require accurate modeling of the scattering mechanisms in the silicon channel which makes 3D Monte Carlo simulation attractive However, for the simulation of new materials in the channel and source/drain of the Finfet, 3D Monte Carlo simulation becomes mandatory for the transport modeling. In this paper, we will review these different aspects of the TCAD needed for the 3D Tri-gate devices.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"74 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86291515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940055
S. Kirnstoetter, M. Faccinelli, P. Hadley, M. Jelinek, W. Schustereder, J. Laven, H. Schulze
Implanting hydrogen ions (H+) into silicon creates defects that can act as donors. The microscopic structure of these defects is not entirely clear. There is a difference in the resulting doping profiles if the silicon is produced by the float zone (Fz) process or the magnetic Czochralski (m:Cz) process. Silicon produced by the m:Cz process has higher concentrations of oxygen and carbon than silicon produced by the Fz process. The presence of the oxygen and carbon affects the formation of defects and thereby the doping profile. We implanted high resistivity p-type m:Cz and Fz wafers with protons. Due to the n-type doping from the H+ implantation, a pn-junction was generated in the sample. Simulations indicate that the H+ implantation depth is 148 μm. Spreading Resistance Profiling (SRP) measurements of as-implanted and not annealed samples show a donor peak at 148 μm in the Fz samples but the peak is at about 160 μm depth in m:Cz samples. After a low temperature anneal of the m:Cz samples at temperatures between 150 and 250 °C for at least 30 minutes, the expected end of range (EOR) donor peak (at about 148 μm) appears. For higher annealing temperatures, the hydrogen related donor complexes (HTD's) become activated and the EOR peak becomes dominant in the implantation profile. In an SRP study we show the evolution of the doping profile of hydrogen implanted m:Cz and Fz wafers as a function of the annealing temperature. To monitor the depth of the formed pn-junction and the effective local diffusion length in the proton radiation damaged region, Electron Beam Induced Current (EBIC) measurements were performed.
{"title":"H+ implantation profile formation in m:Cz and Fz silicon","authors":"S. Kirnstoetter, M. Faccinelli, P. Hadley, M. Jelinek, W. Schustereder, J. Laven, H. Schulze","doi":"10.1109/IIT.2014.6940055","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940055","url":null,"abstract":"Implanting hydrogen ions (H+) into silicon creates defects that can act as donors. The microscopic structure of these defects is not entirely clear. There is a difference in the resulting doping profiles if the silicon is produced by the float zone (Fz) process or the magnetic Czochralski (m:Cz) process. Silicon produced by the m:Cz process has higher concentrations of oxygen and carbon than silicon produced by the Fz process. The presence of the oxygen and carbon affects the formation of defects and thereby the doping profile. We implanted high resistivity p-type m:Cz and Fz wafers with protons. Due to the n-type doping from the H+ implantation, a pn-junction was generated in the sample. Simulations indicate that the H+ implantation depth is 148 μm. Spreading Resistance Profiling (SRP) measurements of as-implanted and not annealed samples show a donor peak at 148 μm in the Fz samples but the peak is at about 160 μm depth in m:Cz samples. After a low temperature anneal of the m:Cz samples at temperatures between 150 and 250 °C for at least 30 minutes, the expected end of range (EOR) donor peak (at about 148 μm) appears. For higher annealing temperatures, the hydrogen related donor complexes (HTD's) become activated and the EOR peak becomes dominant in the implantation profile. In an SRP study we show the evolution of the doping profile of hydrogen implanted m:Cz and Fz wafers as a function of the annealing temperature. To monitor the depth of the formed pn-junction and the effective local diffusion length in the proton radiation damaged region, Electron Beam Induced Current (EBIC) measurements were performed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"47 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86303893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940056
W. Yoo, K. Kang, T. Ueda, T. Ishigaki, H. Nishigaki, N. Hasuike, H. Harima, M. Yoshimoto
Ion implant damage to the Si lattice was investigated using ultraviolet (UV) Raman spectroscopy under two UV excitation wavelengths (266.0 and 363.8 nm) with probing depths of ~2 and ~5nm into the surface. Ultra-shallow implantation of B+ and BF2+ ions with and without Ge pre-amorphization implantation (PAI) into 300mm diameter n-type Si(100) wafers were prepared. Raman peak broadening and shape change, corresponding to the degree and depth of ion implantation damage to the Si lattice, were measured. Changes of reflectance spectra in the UV and visible wavelength region caused by the ultra-shallow ion implantation were measured and correlated with Si lattice damage evaluated by UV Raman spectroscopy, secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscopy (HRXTEM). UV Raman spectroscopy is a very promising non-contact Si lattice damage characterization technique for ultra-shallow ion implanted Si and can be used as an in-line damage and electrical activation monitoring technique.
{"title":"Ultraviolet (UV) raman characterization of ultra- shallow ion implanted silicon","authors":"W. Yoo, K. Kang, T. Ueda, T. Ishigaki, H. Nishigaki, N. Hasuike, H. Harima, M. Yoshimoto","doi":"10.1109/IIT.2014.6940056","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940056","url":null,"abstract":"Ion implant damage to the Si lattice was investigated using ultraviolet (UV) Raman spectroscopy under two UV excitation wavelengths (266.0 and 363.8 nm) with probing depths of ~2 and ~5nm into the surface. Ultra-shallow implantation of B+ and BF2+ ions with and without Ge pre-amorphization implantation (PAI) into 300mm diameter n-type Si(100) wafers were prepared. Raman peak broadening and shape change, corresponding to the degree and depth of ion implantation damage to the Si lattice, were measured. Changes of reflectance spectra in the UV and visible wavelength region caused by the ultra-shallow ion implantation were measured and correlated with Si lattice damage evaluated by UV Raman spectroscopy, secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscopy (HRXTEM). UV Raman spectroscopy is a very promising non-contact Si lattice damage characterization technique for ultra-shallow ion implanted Si and can be used as an in-line damage and electrical activation monitoring technique.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"15 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80435884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939987
S. Yedave, Ying Tang, O. Byl, J. Sweeney
Silicon Tetrafluoride (SiF4) is a dopant gas of choice for different silicon ion implantation processes used in semiconductor device engineering. It is a primary source of atomic dopants like Si and F, and a potential source of molecular dopants (e.g. Si2, SiFx, x=1-3). A significant challenge associated with the use of SiF4 is that it can compromise ion source performance, resulting in poor beam stability and source life. This is primarily the result of the formation of a halogen cycle that takes place due to the presence of fluorine from the SiF4 molecule along with tungsten materials that are present in the ion source (e.g. liners, walls). A second challenge associated with SiF4 can be limited beam current. In order to improve implant tool performance when using SiF4, the following investigations have been performed: (1) Characterization of SiF4 / H2 mixtures: The addition of hydrogen co-gas can effectively mitigate the halogen cycle and improve source performance. Using the magnitude of the resulting WFx peaks as an indicator, the degree to which the halogen cycle is mitigated is shown as a function of H2 flow rate. Also, in that single packages may impart various advantages, SiF4 / H2 co-mixture stability data are provided. (2) Characterization of enriched (en) 28SiF4: The additional enrichment can enable higher beam currents of 28Si+. The effect of En-28SiF4 flow rate on beam current is presented, along with the resulting WFx spectra. (3) Initial observations of SiF3+ beams are provided, along with the potential benefits that may be obtained in selecting this molecular ion.
{"title":"Silicon Tetrafluoride dopant gas for silicon ion implantation","authors":"S. Yedave, Ying Tang, O. Byl, J. Sweeney","doi":"10.1109/IIT.2014.6939987","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939987","url":null,"abstract":"Silicon Tetrafluoride (SiF<sub>4</sub>) is a dopant gas of choice for different silicon ion implantation processes used in semiconductor device engineering. It is a primary source of atomic dopants like Si and F, and a potential source of molecular dopants (e.g. Si<sub>2</sub>, SiF<sub>x</sub>, x=1-3). A significant challenge associated with the use of SiF<sub>4</sub> is that it can compromise ion source performance, resulting in poor beam stability and source life. This is primarily the result of the formation of a halogen cycle that takes place due to the presence of fluorine from the SiF<sub>4</sub> molecule along with tungsten materials that are present in the ion source (e.g. liners, walls). A second challenge associated with SiF<sub>4</sub> can be limited beam current. In order to improve implant tool performance when using SiF<sub>4</sub>, the following investigations have been performed: (1) Characterization of SiF<sub>4</sub> / H<sub>2</sub> mixtures: The addition of hydrogen co-gas can effectively mitigate the halogen cycle and improve source performance. Using the magnitude of the resulting WF<sub>x</sub> peaks as an indicator, the degree to which the halogen cycle is mitigated is shown as a function of H<sub>2</sub> flow rate. Also, in that single packages may impart various advantages, SiF<sub>4</sub> / H<sub>2</sub> co-mixture stability data are provided. (2) Characterization of enriched (en) <sup>28</sup>SiF<sub>4</sub>: The additional enrichment can enable higher beam currents of <sup>28</sup>Si<sup>+</sup>. The effect of En-<sup>28</sup>SiF<sub>4</sub> flow rate on beam current is presented, along with the resulting WF<sub>x</sub> spectra. (3) Initial observations of SiF<sub>3</sub><sup>+</sup> beams are provided, along with the potential benefits that may be obtained in selecting this molecular ion.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"39 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80513884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940058
Weijiang Zhao, K. Tobikawa, T. Nagayama, S. Sakai
In this study, we investigated an ion implantation effect to change the physical property of High Purity Semi-Insulating Silicon Carbide (HPSI-SiC) wafers. Ion implanter IMPHEAT® was used to implant an ion beam into SiC wafers. The spectroscopic analysis was carried out before and after ion implantation. The chucking force was also measured before and after ion implantation to confirm change of the force. Additionally, the implant depth profile was investigated with the effect of a Plasma Flood Gun (PFG).
{"title":"A study on Silicon Carbide (SiC) wafer using ion implantation","authors":"Weijiang Zhao, K. Tobikawa, T. Nagayama, S. Sakai","doi":"10.1109/IIT.2014.6940058","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940058","url":null,"abstract":"In this study, we investigated an ion implantation effect to change the physical property of High Purity Semi-Insulating Silicon Carbide (HPSI-SiC) wafers. Ion implanter IMPHEAT® was used to implant an ion beam into SiC wafers. The spectroscopic analysis was carried out before and after ion implantation. The chucking force was also measured before and after ion implantation to confirm change of the force. Additionally, the implant depth profile was investigated with the effect of a Plasma Flood Gun (PFG).","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"79 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90219860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940043
N. Suetsugu, M. Tsukihara, M. Kabasawa, F. Sato, T. Yagita
The SAion-450 is a leading-edge ion implanter developed for the upcoming 450mm wafer generation. The SAion-450 has extremely wide process coverage and productivity throughout both the medium current (MC) and high current (HC) process ranges. Although the area of a 450mm wafer is 2.25 times larger than that of a 300mm wafer, the SAion-450 can process typical MC recipes with higher productivity than the current 300mm MC implanter, the MC3-II/GP. Additionally, low energy (LE) productivity can be significantly enhanced with the addition of the LE beam line option. This can be easily installed (or removed) in a production fab. The SAion product line also includes a 300mm model. The SAion-300 is equipped with the same beamline as the SAion-450 in order to deliver the same process characteristics in 300mm fabs as in 450mm wafer lines. Thus, the SAion series can serve as a bridge tool to assure smooth wafer size transition from 300mm to 450mm.
{"title":"SAion - SEN's unique solution for 450mm ion implant","authors":"N. Suetsugu, M. Tsukihara, M. Kabasawa, F. Sato, T. Yagita","doi":"10.1109/IIT.2014.6940043","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940043","url":null,"abstract":"The SAion-450 is a leading-edge ion implanter developed for the upcoming 450mm wafer generation. The SAion-450 has extremely wide process coverage and productivity throughout both the medium current (MC) and high current (HC) process ranges. Although the area of a 450mm wafer is 2.25 times larger than that of a 300mm wafer, the SAion-450 can process typical MC recipes with higher productivity than the current 300mm MC implanter, the MC3-II/GP. Additionally, low energy (LE) productivity can be significantly enhanced with the addition of the LE beam line option. This can be easily installed (or removed) in a production fab. The SAion product line also includes a 300mm model. The SAion-300 is equipped with the same beamline as the SAion-450 in order to deliver the same process characteristics in 300mm fabs as in 450mm wafer lines. Thus, the SAion series can serve as a bridge tool to assure smooth wafer size transition from 300mm to 450mm.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"21 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90069816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940023
A. Srivastava, A. Wilson, I. Koo
The Applied Materials VSE Plasma Doping (PLAD) tool consists of an inductively coupled RF ion source and a backside-cooled platen with a pulsed negative DC bias to which the wafer is electrostatically clamped. During n-type doping operations using AsH3 or PH3 gases, the chamber components are heavily coated with residue. An in-situ NF3 process can clean the chamber, but this is a long process, utilizing significant quantities of NF3. Over-etching of some areas can create aluminum fluoride particles, thereby necessitating opening the chamber for a full wipe-down, which extends the cleaning process even more. A high-efficiency remote plasma source (RPS) was installed on the chamber. Fluid dynamics analysis was conducted to uniquely diffuse the afterglow (consisting mostly of atomic fluorine) into the chamber to minimize species residence time. Chamber pressure was used as a monitor for testing end-of-process, which was found to be highly repeatable. A hydride-specific sensor used to monitor emissions from the chamber routinely read zero after RPS cleans, indicating a complete clean. Particle counts after several clean cycles showed minimal degradation over baseline. The RPS provides several improvements over existing processes: (1) It was significantly faster at cleaning the standard wall-coatings for AsH3 and PH3 deposits, using less NF3 and without over-etching. (2) Chamber pressure provided a unique end-of-process monitor. (3) Metal contamination as measured with S-SIMS and TXRF remained within control. (4) Chamber particle performance was not significantly affected. (5) It also proved successful in cleaning GeH4 and B2H6 deposits.
{"title":"Using a remote plasma source for n-type Plasma Doping chamber cleans","authors":"A. Srivastava, A. Wilson, I. Koo","doi":"10.1109/IIT.2014.6940023","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940023","url":null,"abstract":"The Applied Materials VSE Plasma Doping (PLAD) tool consists of an inductively coupled RF ion source and a backside-cooled platen with a pulsed negative DC bias to which the wafer is electrostatically clamped. During n-type doping operations using AsH3 or PH3 gases, the chamber components are heavily coated with residue. An in-situ NF3 process can clean the chamber, but this is a long process, utilizing significant quantities of NF3. Over-etching of some areas can create aluminum fluoride particles, thereby necessitating opening the chamber for a full wipe-down, which extends the cleaning process even more. A high-efficiency remote plasma source (RPS) was installed on the chamber. Fluid dynamics analysis was conducted to uniquely diffuse the afterglow (consisting mostly of atomic fluorine) into the chamber to minimize species residence time. Chamber pressure was used as a monitor for testing end-of-process, which was found to be highly repeatable. A hydride-specific sensor used to monitor emissions from the chamber routinely read zero after RPS cleans, indicating a complete clean. Particle counts after several clean cycles showed minimal degradation over baseline. The RPS provides several improvements over existing processes: (1) It was significantly faster at cleaning the standard wall-coatings for AsH3 and PH3 deposits, using less NF3 and without over-etching. (2) Chamber pressure provided a unique end-of-process monitor. (3) Metal contamination as measured with S-SIMS and TXRF remained within control. (4) Chamber particle performance was not significantly affected. (5) It also proved successful in cleaning GeH4 and B2H6 deposits.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74329542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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