Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939988
Barry Chambers, Ying Tang, S. Yedave, O. Byl, Greg Baumgart, Joseph Despres, J. Sweeney
Ion implantation of germanium in silicon wafers is often troubled by reduced ion source life due to use of germanium tetrafluoride (GeF4) as a source material. The problem is mainly due to tungsten re-deposition, a result of a fluorine-induced halogen cycle initiated within the ion source. The halogen cycle is particularly pronounced in the case of GeF4 by easy fragmentation of the molecule, as well as low utilization of germanium due to wide isotopic distribution of natural abundance GeF4. Through isotopic enrichment of 72GeF4, benefits such as enhanced ion implantation beam current, lower gas flow, and longer source life can be achieved versus natural GeF4. Additional benefits can be realized when using mixtures of GeF4 with hydrogen (H2). Data are presented that show the effect of H2 content on beam current as well as on tungsten transport. Lastly, thermodynamics and stability results are presented for a single cylinder mixture of GeF4 with H2.
{"title":"Germanium ion implantation efficiency improvement with use of germanium tetrafluoride","authors":"Barry Chambers, Ying Tang, S. Yedave, O. Byl, Greg Baumgart, Joseph Despres, J. Sweeney","doi":"10.1109/IIT.2014.6939988","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939988","url":null,"abstract":"Ion implantation of germanium in silicon wafers is often troubled by reduced ion source life due to use of germanium tetrafluoride (GeF<sub>4</sub>) as a source material. The problem is mainly due to tungsten re-deposition, a result of a fluorine-induced halogen cycle initiated within the ion source. The halogen cycle is particularly pronounced in the case of GeF<sub>4</sub> by easy fragmentation of the molecule, as well as low utilization of germanium due to wide isotopic distribution of natural abundance GeF<sub>4</sub>. Through isotopic enrichment of <sup>72</sup>GeF<sub>4</sub>, benefits such as enhanced ion implantation beam current, lower gas flow, and longer source life can be achieved versus natural GeF<sub>4</sub>. Additional benefits can be realized when using mixtures of GeF<sub>4</sub> with hydrogen (H<sub>2</sub>). Data are presented that show the effect of H<sub>2</sub> content on beam current as well as on tungsten transport. Lastly, thermodynamics and stability results are presented for a single cylinder mixture of GeF<sub>4</sub> with H<sub>2</sub>.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"109 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80720214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939976
M. Coig, F. Milési, N. Payen, S. Reboh, F. Mazen, A. Lanterne, J. Le Perchec, S. Gall, Y. Veschetti
The doping of n-type silicon solar cells was investigated using two ion implantation techniques: beam line and plasma immersion. Initially we studied the effects of beam line ion implantation, where the dopants were activated by two different annealing routines. The first one used a single annealing to activate both B implanted emitter and P implanted back surface field (BSF), while the second one used two different annealing to separately activate the dopants. Good yield was reached with a record cell of 20.33% efficiency. Secondly, we investigated the doping by plasma immersion ion implantation with final objective of fabricate a solar cell fully doped by plasma.
{"title":"Solar cells doping by beam line and plasma immersion ion implantation","authors":"M. Coig, F. Milési, N. Payen, S. Reboh, F. Mazen, A. Lanterne, J. Le Perchec, S. Gall, Y. Veschetti","doi":"10.1109/IIT.2014.6939976","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939976","url":null,"abstract":"The doping of n-type silicon solar cells was investigated using two ion implantation techniques: beam line and plasma immersion. Initially we studied the effects of beam line ion implantation, where the dopants were activated by two different annealing routines. The first one used a single annealing to activate both B implanted emitter and P implanted back surface field (BSF), while the second one used two different annealing to separately activate the dopants. Good yield was reached with a record cell of 20.33% efficiency. Secondly, we investigated the doping by plasma immersion ion implantation with final objective of fabricate a solar cell fully doped by plasma.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"101 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73333912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939999
H. Kubotera, Yasuyuki Kayama, S. Nagura, Y. Usami, Alexander Schmidt, U. Kwon, Keun-Ho Lee, Youngkwan Park
Precise simulation of ion implantation is a crucial base point of Front End Process (FEP) TCAD. To meet both simulation accuracy target and achieve short turnaround time (TAT), an improved statistical enhancement method has been implemented in Monte Carlo ion implantation simulator. The approach used for statistical enhancement allowed lower lateral doping profile noise comparing to conventional method while using just a fraction of simulation time. The results led to significant TAT reduction for advanced Logic and Memory FEP simulations.
{"title":"Efficient Monte Carlo simulation of ion implantation into 3D FinFET structure","authors":"H. Kubotera, Yasuyuki Kayama, S. Nagura, Y. Usami, Alexander Schmidt, U. Kwon, Keun-Ho Lee, Youngkwan Park","doi":"10.1109/IIT.2014.6939999","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939999","url":null,"abstract":"Precise simulation of ion implantation is a crucial base point of Front End Process (FEP) TCAD. To meet both simulation accuracy target and achieve short turnaround time (TAT), an improved statistical enhancement method has been implemented in Monte Carlo ion implantation simulator. The approach used for statistical enhancement allowed lower lateral doping profile noise comparing to conventional method while using just a fraction of simulation time. The results led to significant TAT reduction for advanced Logic and Memory FEP simulations.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74173540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940012
S. Prussin, A. Joshi
Advanced devices require knowledge of carrier concentration, mobility and resistivity profiles as well as the effects of strain. Active Layer Parametrics, Inc.'s Differential Hall Effect Method (DHE) represents a technique to directly measure these parameters as well as the effects of strain from high dopant concentrations and group IV impurities.
{"title":"The effect of strain on carrier mobility","authors":"S. Prussin, A. Joshi","doi":"10.1109/IIT.2014.6940012","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940012","url":null,"abstract":"Advanced devices require knowledge of carrier concentration, mobility and resistivity profiles as well as the effects of strain. Active Layer Parametrics, Inc.'s Differential Hall Effect Method (DHE) represents a technique to directly measure these parameters as well as the effects of strain from high dopant concentrations and group IV impurities.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"23 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81858728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940027
Shengwu Chang, Brian Gori, Curt Norris, J. Klein, Kurt Decker-Lucke
High energy hydrogen and helium ion implants are required for enhancing performance of advanced power devices, such as improving breakdown voltage and switching response for IGBT products. The Varian Semiconductor Equipment business unit of Applied Materials has employed the VIISta platform architecture to provide production level throughputs of high energy hydrogen and helium for both standard and thin wafer substrates. Improvements to the implanter architecture will be described. The beam optics optimization, including the charge-exchange resonance and light species transport, will be discussed. The design and implementation of the radiation mitigation system, which meets industry standards for radiation limits and allows for operation in a typical production environment, will be described. Overall productivity and thin wafer implant capability are presented.
{"title":"High energy hydrogen and helium ion implanter","authors":"Shengwu Chang, Brian Gori, Curt Norris, J. Klein, Kurt Decker-Lucke","doi":"10.1109/IIT.2014.6940027","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940027","url":null,"abstract":"High energy hydrogen and helium ion implants are required for enhancing performance of advanced power devices, such as improving breakdown voltage and switching response for IGBT products. The Varian Semiconductor Equipment business unit of Applied Materials has employed the VIISta platform architecture to provide production level throughputs of high energy hydrogen and helium for both standard and thin wafer substrates. Improvements to the implanter architecture will be described. The beam optics optimization, including the charge-exchange resonance and light species transport, will be discussed. The design and implementation of the radiation mitigation system, which meets industry standards for radiation limits and allows for operation in a typical production environment, will be described. Overall productivity and thin wafer implant capability are presented.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85504898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940035
A. Perel, N. Bassom, Craig Chaney, Sruthi Chennadi, A. Cucchetti, J. Klein, J. Young
In this paper we introduce the VIISta HCPt: a powerful upgrade to the proven VIISta High Current platform that delivers higher productivity and DPY advantages for Flash device manufacturers. Multiple HCPt units are currently running in production. A new source technology, added beam modulation capability, and an innovative tuning algorithm are integrated to provide higher productivity in the higher energy range. The new source design generates more efficient plasma to achieve increased extraction currents without compromising source life. A new tuning algorithm enables better transmission through the beam-line. A quadrupole lens has also been added for vertical beam height control, enabling higher beam currents at equivalent or lower dose rates. In addition to discussing the new innovative optical components, data on beam current, source life, and dose rate modulation are presented.
{"title":"VIISta HCPt: High current productivity solution for flash devices","authors":"A. Perel, N. Bassom, Craig Chaney, Sruthi Chennadi, A. Cucchetti, J. Klein, J. Young","doi":"10.1109/IIT.2014.6940035","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940035","url":null,"abstract":"In this paper we introduce the VIISta HCPt: a powerful upgrade to the proven VIISta High Current platform that delivers higher productivity and DPY advantages for Flash device manufacturers. Multiple HCPt units are currently running in production. A new source technology, added beam modulation capability, and an innovative tuning algorithm are integrated to provide higher productivity in the higher energy range. The new source design generates more efficient plasma to achieve increased extraction currents without compromising source life. A new tuning algorithm enables better transmission through the beam-line. A quadrupole lens has also been added for vertical beam height control, enabling higher beam currents at equivalent or lower dose rates. In addition to discussing the new innovative optical components, data on beam current, source life, and dose rate modulation are presented.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"27 5","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91479860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940007
T. Shih, Wen-Hsi Lee
The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.
{"title":"Optimization of Parameters for TVS breakdown voltage: Design and Fabrication","authors":"T. Shih, Wen-Hsi Lee","doi":"10.1109/IIT.2014.6940007","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940007","url":null,"abstract":"The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"10 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90858434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940042
T. Hsieh, N. Colvin
Fluoride based gases are commonly used in the ion implantation. Gases such as GeF4, SiF4 use as pre-amorphization species and BF3 is for high dose p-type BF2 and 11Boron can be a productivity challenge for conventional ion implanters used for semi-conductor device applications. As device geometries continuously shrink, there is a trend to deliver higher beam currents at lower energies, with a corresponding reduction in particles and metal contamination.
{"title":"Improved ion source stability using H2 co-gas for fluoride based dopants","authors":"T. Hsieh, N. Colvin","doi":"10.1109/IIT.2014.6940042","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940042","url":null,"abstract":"Fluoride based gases are commonly used in the ion implantation. Gases such as GeF<sub>4</sub>, SiF<sub>4</sub> use as pre-amorphization species and BF<sub>3</sub> is for high dose p-type BF<sub>2</sub> and <sup>11</sup>Boron can be a productivity challenge for conventional ion implanters used for semi-conductor device applications. As device geometries continuously shrink, there is a trend to deliver higher beam currents at lower energies, with a corresponding reduction in particles and metal contamination.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83179160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939960
A. Vyatkin, Y. Agafonov, V. Zinenko, V. V. Saraĭkin
In recent years silicon doping aimed at ultrashallow p-n junction formation is very often performed at low temperatures. This work shows that films condensed in the solid phase from gas molecules of the residual atmosphere in the implantation chamber can appear on the silicon surface at low temperature (83K) implantation of boron ions. These condensed films can bring about a decrease in the projected range of the boron ions. The observed effect was used in this work to produce ultrashallow layers of boron atoms in silicon wafers from the BF3 film condensed in the solid phase on the silicon surface by the recoil implantation technique.
{"title":"The features of cold boron implantation in silicon","authors":"A. Vyatkin, Y. Agafonov, V. Zinenko, V. V. Saraĭkin","doi":"10.1109/IIT.2014.6939960","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939960","url":null,"abstract":"In recent years silicon doping aimed at ultrashallow p-n junction formation is very often performed at low temperatures. This work shows that films condensed in the solid phase from gas molecules of the residual atmosphere in the implantation chamber can appear on the silicon surface at low temperature (83K) implantation of boron ions. These condensed films can bring about a decrease in the projected range of the boron ions. The observed effect was used in this work to produce ultrashallow layers of boron atoms in silicon wafers from the BF3 film condensed in the solid phase on the silicon surface by the recoil implantation technique.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"161 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72929256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939991
G. Lin, Ching-I Li, Po-Heng Lin, Chih-Ming Tai, R. Chang
Multiple-gate FETs such as FinFETs would be adopted at the 22nm technology generation and beyond, owing to the better control of short-channel effects (SCEs) in high-volume manufacturing. In this paper, we present a novel implantation mode called “FlexScan” that consists of a series of various rotated angles. We perform the implant with FlexScan mode by Monte-Carlo simulation. FlexScan shows more conformal doping distribution in the fin structure. We expect that it could reduce device leakage and device variation caused from random doping distribution. The FlexScan mode could be used for 3D device doping process needed conformal doping profile.
{"title":"Novel implantation mode application in FinFET structure","authors":"G. Lin, Ching-I Li, Po-Heng Lin, Chih-Ming Tai, R. Chang","doi":"10.1109/IIT.2014.6939991","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939991","url":null,"abstract":"Multiple-gate FETs such as FinFETs would be adopted at the 22nm technology generation and beyond, owing to the better control of short-channel effects (SCEs) in high-volume manufacturing. In this paper, we present a novel implantation mode called “FlexScan” that consists of a series of various rotated angles. We perform the implant with FlexScan mode by Monte-Carlo simulation. FlexScan shows more conformal doping distribution in the fin structure. We expect that it could reduce device leakage and device variation caused from random doping distribution. The FlexScan mode could be used for 3D device doping process needed conformal doping profile.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"29 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77641100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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