Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939993
Cuiyang Wang, S. Tang, Keping Han, H. Persing, H. Maynard, S. Salimian
A conformal doping technique is demonstrated for 3D finFET source/drain extensions using a plasma doping (PLAD) system. The arsenic dopant distribution at the top and the sidewalls of the fin was characterized by Energy Dispersive X-Ray spectroscopy (EDS) mapping, EDS line scan, and through-fin secondary ion mass spectroscopy (SIMS). The residual post-anneal damage was also evaluated by cross-section transmission electron spectroscopy (X-TEM). The effects of energy, dose and other plasma doping parameters on the sidewall dopant distribution are also studied.
{"title":"A plasma doping process for 3D finFET source/drain extensions","authors":"Cuiyang Wang, S. Tang, Keping Han, H. Persing, H. Maynard, S. Salimian","doi":"10.1109/IIT.2014.6939993","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939993","url":null,"abstract":"A conformal doping technique is demonstrated for 3D finFET source/drain extensions using a plasma doping (PLAD) system. The arsenic dopant distribution at the top and the sidewalls of the fin was characterized by Energy Dispersive X-Ray spectroscopy (EDS) mapping, EDS line scan, and through-fin secondary ion mass spectroscopy (SIMS). The residual post-anneal damage was also evaluated by cross-section transmission electron spectroscopy (X-TEM). The effects of energy, dose and other plasma doping parameters on the sidewall dopant distribution are also studied.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90383699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940031
Y. Kato, K. Yano, D. Kimura, S. Kumakura, Y. Imai, T. Nishiokada, F. Sato, T. Iida
A tandem-type electron cyclotron resonance (ECR) ion source (ECRIS) has been constructed for synthesizing, extracting, and analyzing ions. The feasibility and realization of the device which has rangy operation window in a single device are investigated to produce many kinds of ion beams like universal source based on ECRIS. The ECR plasmas are considered to be necessary to be available to coexist and to be operated individually with different plasma parameters. Both of analysis of ion beams and investigation of plasma parameters will be conducted on produced plasmas. In this article the experimental study concentrates on improvement of producing and extracting multicharged ion beams from the second stage of the tandem-type ECRIS under lower magnetic mirror field with octupole magnets. The assembly of the extractor is modified and their positions, gap, and potentials are investigated against each ion spices. We succeeded in producing, extracting multicharged ion currents and improving ion extraction, while the magnetic field is about 60% of the previous magnetic field strength. We will present obtained evidences experimentally in detail.
{"title":"Improved ion production and extraction on tandem type ECRIS with low magnetic mirror field","authors":"Y. Kato, K. Yano, D. Kimura, S. Kumakura, Y. Imai, T. Nishiokada, F. Sato, T. Iida","doi":"10.1109/IIT.2014.6940031","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940031","url":null,"abstract":"A tandem-type electron cyclotron resonance (ECR) ion source (ECRIS) has been constructed for synthesizing, extracting, and analyzing ions. The feasibility and realization of the device which has rangy operation window in a single device are investigated to produce many kinds of ion beams like universal source based on ECRIS. The ECR plasmas are considered to be necessary to be available to coexist and to be operated individually with different plasma parameters. Both of analysis of ion beams and investigation of plasma parameters will be conducted on produced plasmas. In this article the experimental study concentrates on improvement of producing and extracting multicharged ion beams from the second stage of the tandem-type ECRIS under lower magnetic mirror field with octupole magnets. The assembly of the extractor is modified and their positions, gap, and potentials are investigated against each ion spices. We succeeded in producing, extracting multicharged ion currents and improving ion extraction, while the magnetic field is about 60% of the previous magnetic field strength. We will present obtained evidences experimentally in detail.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"71 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85194025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939772
A. G. Lind, K. Jones, C. Hatem
To test if Si+ activation could be improved through forced site selection, co-implantation of varying doses of Al+ and P+ with a fixed Si dose into In0.53Ga0.47As has been studied. P+ implants are shown to have limited effectiveness in raising overall n-type activation of Si+ implants while Al-co-implantation is shown to dramatically lower overall n-type activation with increasing Al dose. Implant damage from the co-implant species is thought to be one possible reason for the limited effectiveness P co-implantation has on raising the maximum electrical activation of Si implants. The results suggest that co-implantation has a dramatic, but complicated, effect on activation.
{"title":"Activation of low-dose Si+ implant into In0.53Ga0.47As with Al+ and P+ co-implants","authors":"A. G. Lind, K. Jones, C. Hatem","doi":"10.1109/IIT.2014.6939772","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939772","url":null,"abstract":"To test if Si<sup>+</sup> activation could be improved through forced site selection, co-implantation of varying doses of Al<sup>+</sup> and P<sup>+</sup> with a fixed Si dose into In<sub>0.53</sub>Ga<sub>0.47</sub>As has been studied. P<sup>+</sup> implants are shown to have limited effectiveness in raising overall n-type activation of Si<sup>+</sup> implants while Al-co-implantation is shown to dramatically lower overall n-type activation with increasing Al dose. Implant damage from the co-implant species is thought to be one possible reason for the limited effectiveness P co-implantation has on raising the maximum electrical activation of Si implants. The results suggest that co-implantation has a dramatic, but complicated, effect on activation.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"34 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72892539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940017
S. Qin
PLAD (plasma doping) is promising for both evolutionary and revolutionary doping options because of its unique advantages which can overcome or minimize many of the issues of the beam-line (BL) based implants. In this talk, I present developments of PLAD on both planar and non-planar 3D device structures. Comparing with the conventional BL implants, PLAD shows not only a significant production enhancement, but also a significant device performance improvement and 3D structure doping capability, including an 80% contact resistance reduction, more than 25% drive current increase on planar devices, and 23% series resistance reduction, 25% drive current increase on non-planar 3D devices.
{"title":"Plasma doping (PLAD) for advanced memory device manufacturing","authors":"S. Qin","doi":"10.1109/IIT.2014.6940017","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940017","url":null,"abstract":"PLAD (plasma doping) is promising for both evolutionary and revolutionary doping options because of its unique advantages which can overcome or minimize many of the issues of the beam-line (BL) based implants. In this talk, I present developments of PLAD on both planar and non-planar 3D device structures. Comparing with the conventional BL implants, PLAD shows not only a significant production enhancement, but also a significant device performance improvement and 3D structure doping capability, including an 80% contact resistance reduction, more than 25% drive current increase on planar devices, and 23% series resistance reduction, 25% drive current increase on non-planar 3D devices.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"46 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86050991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940048
S. Falk, Youn‐ki Kim, Reiner Kaspareit, B. Colombeau, Yves Ritterhaus, H. Holtmeier, Marcel Lamaack
SuperScan™ and SuperScan II™, software add-on programs that can be used with AMAT VIISta medium current implanters, have been used to improve center-to-edge Vt variations in a power device. By using SuperScan™ for implanting an n-type doped body implant, an improvement has been seen in radial, center-to-edge Vt variations by up to 32% (ΔVt = 170mV) compared to implanting without SuperScan™ (ΔVt = 250mV). However, if the Vt non-uniformity pattern is slightly off-center, the correction in Vt variation may be better suited for the use of SuperScan II™, which can implant radial patterns which are off-center. An improvement of up to 64% (ΔVt = 90mV) has been seen in center-to-edge Vt variations for off-center patterns by using SuperScan II™ for implanting the same n-type doped body implant.
{"title":"Using SuperScan™ and SuperScan II™ to improve Vt variations in a p-channel power MOSFET device","authors":"S. Falk, Youn‐ki Kim, Reiner Kaspareit, B. Colombeau, Yves Ritterhaus, H. Holtmeier, Marcel Lamaack","doi":"10.1109/IIT.2014.6940048","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940048","url":null,"abstract":"SuperScan™ and SuperScan II™, software add-on programs that can be used with AMAT VIISta medium current implanters, have been used to improve center-to-edge Vt variations in a power device. By using SuperScan™ for implanting an n-type doped body implant, an improvement has been seen in radial, center-to-edge Vt variations by up to 32% (ΔVt = 170mV) compared to implanting without SuperScan™ (ΔVt = 250mV). However, if the Vt non-uniformity pattern is slightly off-center, the correction in Vt variation may be better suited for the use of SuperScan II™, which can implant radial patterns which are off-center. An improvement of up to 64% (ΔVt = 90mV) has been seen in center-to-edge Vt variations for off-center patterns by using SuperScan II™ for implanting the same n-type doped body implant.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"11 12 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82830668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939974
R. Maier, V. Haublein, H. Ryssel
Rutherford Backscattering Spectroscopy was used to analyze and quantify the out-diffusion of Cs and Rb from silicon during solid-phase epitaxial regrowth under N2 atmosphere. Out-diffused amounts of about 60% Rb and 30% Cs were determined. The transient out-diffusion behavior of the alkali atoms in ultra-high vacuum was monitored during recrystallization by secondary neutral mass spectroscopy. The analysis showed that the alkali atoms diffuse out without forming chemical bonds which are critical for the proposed application. With our results it could be estimated that this filling method has a potential to replace other methods for producing atomic vapor cells.
{"title":"Out-diffusion of cesium and rubidium from amorphized silicon during solid-phase epitaxial regrowth","authors":"R. Maier, V. Haublein, H. Ryssel","doi":"10.1109/IIT.2014.6939974","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939974","url":null,"abstract":"Rutherford Backscattering Spectroscopy was used to analyze and quantify the out-diffusion of Cs and Rb from silicon during solid-phase epitaxial regrowth under N2 atmosphere. Out-diffused amounts of about 60% Rb and 30% Cs were determined. The transient out-diffusion behavior of the alkali atoms in ultra-high vacuum was monitored during recrystallization by secondary neutral mass spectroscopy. The analysis showed that the alkali atoms diffuse out without forming chemical bonds which are critical for the proposed application. With our results it could be estimated that this filling method has a potential to replace other methods for producing atomic vapor cells.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84321282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940050
A. Nath, M. V. Rao, Francesco Moscatelli, Maurizio Puzzanghera, Fulvio Mancarella, R. Nipoti
In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
{"title":"Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes","authors":"A. Nath, M. V. Rao, Francesco Moscatelli, Maurizio Puzzanghera, Fulvio Mancarella, R. Nipoti","doi":"10.1109/IIT.2014.6940050","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940050","url":null,"abstract":"In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"11 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81992592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940009
T. Seidel, M. Halls, A. Goldberg, J. Elam, A. Mane, M. Current
The doping of finFET sidewalls is studied using glancing angle, energetic ion beam recoil mixing of dopant-rich layers made by atomic layer deposited (ALD) films on vertical Si(100) surfaces. Density Function Theory (DTF) calculations show that surface conditions for initiating ALD with BF3 and PF3 dopants favor hydroxyl-Si surface termination. Monte Carlo calculations of the recoil-delivered-B highlights the process control advantages of grazing angle incidence energetic ion beams, as long as the deposited dopant layers are well controlled in thickness and composition, as one expects from ALD methods.
{"title":"Atomic layer deposition of dopants for recoil implantation in finFET sidewalls","authors":"T. Seidel, M. Halls, A. Goldberg, J. Elam, A. Mane, M. Current","doi":"10.1109/IIT.2014.6940009","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940009","url":null,"abstract":"The doping of finFET sidewalls is studied using glancing angle, energetic ion beam recoil mixing of dopant-rich layers made by atomic layer deposited (ALD) films on vertical Si(100) surfaces. Density Function Theory (DTF) calculations show that surface conditions for initiating ALD with BF3 and PF3 dopants favor hydroxyl-Si surface termination. Monte Carlo calculations of the recoil-delivered-B highlights the process control advantages of grazing angle incidence energetic ion beams, as long as the deposited dopant layers are well controlled in thickness and composition, as one expects from ALD methods.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"74 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89200797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939958
S. Qin, Y. Hu, A. Mcteer
We extensively investigate tool and recipe set-up dependence of the ultra-shallow junctions (USJ) doped by the boron-based ultra-low energy (ULE) beam-line (BL) implants. Recipes set-up includes different tools, energies, implant temperatures, and deceleration ratios. Channeling effect and energy contamination issues are de-coupled by drift and deceleration mode implants. A channeling effect factor (CEF) is defined and quantified. Channeling effect is found to be a major factor causing deeper profiles and long tails (xj). Channeling effect gets worse when the implant energy is reduced due to less self-PAI effect (with less damage). Low temperature (-100 °C) implant does not effectively reduce channeling effect. Deceleration mode implant increases tail (xj) due to energy contamination as a secondary order effect.
{"title":"Channeling effect and energy contamination evaluations of B-based beam-line ULE implants - Tools and recipe set-up dependence","authors":"S. Qin, Y. Hu, A. Mcteer","doi":"10.1109/IIT.2014.6939958","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939958","url":null,"abstract":"We extensively investigate tool and recipe set-up dependence of the ultra-shallow junctions (USJ) doped by the boron-based ultra-low energy (ULE) beam-line (BL) implants. Recipes set-up includes different tools, energies, implant temperatures, and deceleration ratios. Channeling effect and energy contamination issues are de-coupled by drift and deceleration mode implants. A channeling effect factor (CEF) is defined and quantified. Channeling effect is found to be a major factor causing deeper profiles and long tails (xj). Channeling effect gets worse when the implant energy is reduced due to less self-PAI effect (with less damage). Low temperature (-100 °C) implant does not effectively reduce channeling effect. Deceleration mode implant increases tail (xj) due to energy contamination as a secondary order effect.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"106 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88392724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939978
K. Hanazono, K. Tokiguchi, I. Kataoka
GCIB technology has been used for semiconductor, optical and magnetic device fabrications. It has also shown a possibility for nanometer level manufacturing. In recent requirement in materials processing, surface smoothing becomes important in a range of nanometer accuracy. This paper describes development of compact GCIB equipment for surface smoothing of lens molds and cutting tools. For the surface smoothing of WC lens mold and CVD diamond cutting tool, the roughness (Ra) of less than 1 nm has been achieved in a production scale. It has also been shown that the GCIB process could make the smoothing smaller than the grain size in these materials.
{"title":"Development of compact gas cluster ion beam (GCIB) equipment and ultra-surface smoothing","authors":"K. Hanazono, K. Tokiguchi, I. Kataoka","doi":"10.1109/IIT.2014.6939978","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939978","url":null,"abstract":"GCIB technology has been used for semiconductor, optical and magnetic device fabrications. It has also shown a possibility for nanometer level manufacturing. In recent requirement in materials processing, surface smoothing becomes important in a range of nanometer accuracy. This paper describes development of compact GCIB equipment for surface smoothing of lens molds and cutting tools. For the surface smoothing of WC lens mold and CVD diamond cutting tool, the roughness (Ra) of less than 1 nm has been achieved in a production scale. It has also been shown that the GCIB process could make the smoothing smaller than the grain size in these materials.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"330 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80478180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：