Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940026
S. Satoh, R. Coolbaugh, C. Geary, J. Deluca
The Axcelis Purion XE is a RF linac based single wafer, hybrid scan, high energy ion implanter. The Purion XE provides customers the highest mechanical throughput with best in class beam currents. It is also equipped with features to fully utilize its high beam current capability such as IntelliScan. IntelliScan maintains precise dose and uniformity even under conditions of extreme photoresist outgassing due to high beam power. To further enhance the Purion XE's industry leading productivity, OptiScan, a system for enhancing the beam utilization, has been developed.
{"title":"Productivity improvements utilizing OptiScan, interlaced beam scanning, for Axcelis Purion XE implanter","authors":"S. Satoh, R. Coolbaugh, C. Geary, J. Deluca","doi":"10.1109/IIT.2014.6940026","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940026","url":null,"abstract":"The Axcelis Purion XE is a RF linac based single wafer, hybrid scan, high energy ion implanter. The Purion XE provides customers the highest mechanical throughput with best in class beam currents. It is also equipped with features to fully utilize its high beam current capability such as IntelliScan. IntelliScan maintains precise dose and uniformity even under conditions of extreme photoresist outgassing due to high beam power. To further enhance the Purion XE's industry leading productivity, OptiScan, a system for enhancing the beam utilization, has been developed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82744842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939963
J. Duchaine, F. Torregrosa, Y. Spiegel, G. Borvon, S. Qin, Y. Hu, A. Mcteer
Plasma immersion ion implantation (PIII) technology is known as an alternative to overcome the limitations of conventional beam line ion implantation for shallow, high dose and 3D doping on advanced memory and logic devices. This technique also shows a better CoO as the result of higher productivity, smaller footprint and lower operating costs. Implementation in production for P-type doping and development of N-type applications address issues from the challenges linked to the use of hydrides, especially in the case of AsH3 and PH3. Problems of excessive deposition lead to difficult process integration and possible safety issues such as wafer out-gassing. [1]. Higher priced gases coupled with higher gas consumption compared to beam line are often mentioned as limitations. In this paper we present a full characterization (done at Micron and at IBS) of AsH3 plasma implantation using PULSION® (PIII tool produced by IBS). Due to its unique remote source design, PULSION® allows a wider process window using lower gas flows [2]. These design advantages minimize the before mentioned drawbacks allowing easier process integration [3]. AES (Auger Electron Spectroscopy), ARXPS (Angle Resolution X-ray Photoelectron Spectroscopy), TOF-SIMS & D-SIMS (Secondary Ion Mass Spectrometry), and TEM (Transmission Electron Microscopy) analysis are used to study deposition, doping profiles, and amorphization as a function of acceleration voltage and dose. The effect of dose on sheet resistance after Spike anneal is discussed, as well as the effect of possible hydrogen dilution. Out-gassing measurements are also presented.
{"title":"Study of AsH3 Plasma Immersion Ion Implantation using PULSION®","authors":"J. Duchaine, F. Torregrosa, Y. Spiegel, G. Borvon, S. Qin, Y. Hu, A. Mcteer","doi":"10.1109/IIT.2014.6939963","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939963","url":null,"abstract":"Plasma immersion ion implantation (PIII) technology is known as an alternative to overcome the limitations of conventional beam line ion implantation for shallow, high dose and 3D doping on advanced memory and logic devices. This technique also shows a better CoO as the result of higher productivity, smaller footprint and lower operating costs. Implementation in production for P-type doping and development of N-type applications address issues from the challenges linked to the use of hydrides, especially in the case of AsH3 and PH3. Problems of excessive deposition lead to difficult process integration and possible safety issues such as wafer out-gassing. [1]. Higher priced gases coupled with higher gas consumption compared to beam line are often mentioned as limitations. In this paper we present a full characterization (done at Micron and at IBS) of AsH3 plasma implantation using PULSION® (PIII tool produced by IBS). Due to its unique remote source design, PULSION® allows a wider process window using lower gas flows [2]. These design advantages minimize the before mentioned drawbacks allowing easier process integration [3]. AES (Auger Electron Spectroscopy), ARXPS (Angle Resolution X-ray Photoelectron Spectroscopy), TOF-SIMS & D-SIMS (Secondary Ion Mass Spectrometry), and TEM (Transmission Electron Microscopy) analysis are used to study deposition, doping profiles, and amorphization as a function of acceleration voltage and dose. The effect of dose on sheet resistance after Spike anneal is discussed, as well as the effect of possible hydrogen dilution. Out-gassing measurements are also presented.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"19 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76001395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940028
S. Ninomiya, Y. Okamoto, A. Ochi, T. Yumiyama, Y. Kimura, Yoshiaki Inda, M. Tsukihara
Needless to say, productivity of ion implantation processes is a very important issue for economical device fabrication. Reduction of implant areas is one of the essential keys to increase a beam utilization factor for high-current ion implanters. SEN already developed the X-, Y-, D-, and F-SAVING system to address this issue. This time, another SAVING system, the O-SAVING, has been developed for the SHX-III/S. In result, the system reduces implant time in 40% from the original implant and more than 10% from the F-SAVING. This system can freely change the beam scan widths and positions, keeping the beam scan frequency constant. In this manner not only good uniformity is ensured but also a shape of implant area can be freely selected from arbitrary shapes such as a circle, a triangle, a semicircle, and so on.
{"title":"SEN's SAVING techniques for productivity enhancement","authors":"S. Ninomiya, Y. Okamoto, A. Ochi, T. Yumiyama, Y. Kimura, Yoshiaki Inda, M. Tsukihara","doi":"10.1109/IIT.2014.6940028","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940028","url":null,"abstract":"Needless to say, productivity of ion implantation processes is a very important issue for economical device fabrication. Reduction of implant areas is one of the essential keys to increase a beam utilization factor for high-current ion implanters. SEN already developed the X-, Y-, D-, and F-SAVING system to address this issue. This time, another SAVING system, the O-SAVING, has been developed for the SHX-III/S. In result, the system reduces implant time in 40% from the original implant and more than 10% from the F-SAVING. This system can freely change the beam scan widths and positions, keeping the beam scan frequency constant. In this manner not only good uniformity is ensured but also a shape of implant area can be freely selected from arbitrary shapes such as a circle, a triangle, a semicircle, and so on.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"33 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82525094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940005
Zhongjian Wang, Xinhong Cheng, C. Xia, Dawei Xu, Lingyan Shen, D. Cao, Li Zheng, Qian Wang, Yu Yuehui
In this paper, 600V LDMOS and LIGBT on thin SOI with improved field oxide (FOX) were fabricated. The dependence of the off-state breakdown voltage on the implant dose in the drift region and the on-state characteristics were measured. Total ionizing dose (TID) effects on LDMOS and LIGBT were studied experimentally. The threshold voltage shift and leakage current induced by 60Co gamma irradiation under different dose and bias conditions were compared.
{"title":"Total ionizing dose effects in high breakdown voltage SOI devices","authors":"Zhongjian Wang, Xinhong Cheng, C. Xia, Dawei Xu, Lingyan Shen, D. Cao, Li Zheng, Qian Wang, Yu Yuehui","doi":"10.1109/IIT.2014.6940005","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940005","url":null,"abstract":"In this paper, 600V LDMOS and LIGBT on thin SOI with improved field oxide (FOX) were fabricated. The dependence of the off-state breakdown voltage on the implant dose in the drift region and the on-state characteristics were measured. Total ionizing dose (TID) effects on LDMOS and LIGBT were studied experimentally. The threshold voltage shift and leakage current induced by 60Co gamma irradiation under different dose and bias conditions were compared.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"59 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76800961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939771
Y. Chin, C. Y. Yang, T. H. Lee, S. Yeh, W. Chang, S. Huang, N. H. Yang, C. Chien, J. F. Lin, G. Li, J. Y. Wu, B. Guo, B. Colombeau, T. Thanigaivelan, N. Pradhan, T. Wu, M. Hou, S. Chen, C. Chung, T. Toh, D. Kouzminov, D. Barrett, K. Shim
Optimization of halo profile for advanced MOSFET device is important to control device short channel effect as well as device leakage. Multiple halo implants, such as mixture of Indium and boron to tailor the halo formation, have been used widely for n-FET devices. Amid its AMU and solubility, Gallium has a potential for better halo activation than Indium and reduced lateral straggling than boron. Therefore, Gallium could be a promising specie for device improvement through 1) halo optimization in planar devices, or 2) ground plane for retrograde well for better FinFET leakage characteristics. In this paper, Gallium is used to replace high scattering P dopant (HS-P) halo for SRAM or HS-P cluster halo for core NFET using a poly-SiON 28nm process with bare wafers and device splits. Secondary Ion Mass Spectroscopy (SIMS) was employed for dopant profiles for as-implanted and after thermal process. It is shown that when replacing HS-P or HS-P cluster halo by Gallium an excessive device shift is observed. The overlap capacitance indicates that overlap lateral diffusion regions are significant different with Gallium halo than established process flow. The paper will discuss potential underlying physical mechanisms.
{"title":"Impact of gallium implant for advanced CMOS halo/pocket optimization","authors":"Y. Chin, C. Y. Yang, T. H. Lee, S. Yeh, W. Chang, S. Huang, N. H. Yang, C. Chien, J. F. Lin, G. Li, J. Y. Wu, B. Guo, B. Colombeau, T. Thanigaivelan, N. Pradhan, T. Wu, M. Hou, S. Chen, C. Chung, T. Toh, D. Kouzminov, D. Barrett, K. Shim","doi":"10.1109/IIT.2014.6939771","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939771","url":null,"abstract":"Optimization of halo profile for advanced MOSFET device is important to control device short channel effect as well as device leakage. Multiple halo implants, such as mixture of Indium and boron to tailor the halo formation, have been used widely for n-FET devices. Amid its AMU and solubility, Gallium has a potential for better halo activation than Indium and reduced lateral straggling than boron. Therefore, Gallium could be a promising specie for device improvement through 1) halo optimization in planar devices, or 2) ground plane for retrograde well for better FinFET leakage characteristics. In this paper, Gallium is used to replace high scattering P dopant (HS-P) halo for SRAM or HS-P cluster halo for core NFET using a poly-SiON 28nm process with bare wafers and device splits. Secondary Ion Mass Spectroscopy (SIMS) was employed for dopant profiles for as-implanted and after thermal process. It is shown that when replacing HS-P or HS-P cluster halo by Gallium an excessive device shift is observed. The overlap capacitance indicates that overlap lateral diffusion regions are significant different with Gallium halo than established process flow. The paper will discuss potential underlying physical mechanisms.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"73 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76021589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939989
B. Guo, H. Gossmann, A. Waite, V. Chavva, T. Toh, Shengwu Chang, Brian Gori
Implantation of light ion species, such as Hydrogen and Helium, is widely used to modify silicon electronic properties by adjustment of charge carrier lifetime. Hydrogen-related donors can also be induced in great depth with MeV implants especially for power device applications. However, the radiation related safety concerns require the Hydrogen be used separately from other dopant species normally used in semiconductor manufacturing process. For implanters only equipped with Hydrogen, Helium, or Argon, the implantation process is uniquely challenging to qualify, especially for fabs without ThermaWave or other similar metrology tools. In this paper, we will discuss the characterization of Hydrogen and Helium using double implant technology for angle verification and SPC purpose. Also, TCAD simulation and SRIM studies are used to explain observed multiple Hydrogen peaks for near zero tilt implant profiles.
{"title":"Process characterization for hydrogen and helium implantation","authors":"B. Guo, H. Gossmann, A. Waite, V. Chavva, T. Toh, Shengwu Chang, Brian Gori","doi":"10.1109/IIT.2014.6939989","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939989","url":null,"abstract":"Implantation of light ion species, such as Hydrogen and Helium, is widely used to modify silicon electronic properties by adjustment of charge carrier lifetime. Hydrogen-related donors can also be induced in great depth with MeV implants especially for power device applications. However, the radiation related safety concerns require the Hydrogen be used separately from other dopant species normally used in semiconductor manufacturing process. For implanters only equipped with Hydrogen, Helium, or Argon, the implantation process is uniquely challenging to qualify, especially for fabs without ThermaWave or other similar metrology tools. In this paper, we will discuss the characterization of Hydrogen and Helium using double implant technology for angle verification and SPC purpose. Also, TCAD simulation and SRIM studies are used to explain observed multiple Hydrogen peaks for near zero tilt implant profiles.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76306931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939979
G. Takaoka, M. Takeuchi, H. Ryuto, Kyohei Hayashi
Vapors of tetradecane (C14H30) were ionized by electron bombardment. The generated fragment ions such as C3H7, C6H13, and C12H25 ions were separated and accelerated towards glass substrates. The acceleration voltage was adjusted between 1.5 kV and 9 kV. The fluence was 4.0 × 1016carbon atoms/cm2. Thin films were deposited on the glass substrates by C3H7- and C6H13-ion irradiation at an incident energy of 0.42 keV per carbon. Raman spectra measurements showed that DLC films were formed by C3H7- and C6H13-ion irradiation with the film thickness being larger in case of C3H7. On the contrary, for C12H25-ion irradiation, the glass substrate surface was sputtered at an incident energy of 0.42 keV per carbon. Chemical sputtering occurred by surface reactions of hydrogen and carbon with silicon and oxygen atoms. In addition, the surface characteristics of glass substrates irradiated by C3H7, C6H13 and C12H25 ions were investigated.
{"title":"Irradiation effects of fragment ions of tetradecane on glass surfaces","authors":"G. Takaoka, M. Takeuchi, H. Ryuto, Kyohei Hayashi","doi":"10.1109/IIT.2014.6939979","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939979","url":null,"abstract":"Vapors of tetradecane (C<sub>14</sub>H<sub>30</sub>) were ionized by electron bombardment. The generated fragment ions such as C<sub>3</sub>H<sub>7</sub>, C<sub>6</sub>H<sub>13</sub>, and C<sub>12</sub>H<sub>25</sub> ions were separated and accelerated towards glass substrates. The acceleration voltage was adjusted between 1.5 kV and 9 kV. The fluence was 4.0 × 10<sup>16</sup>carbon atoms/cm<sup>2</sup>. Thin films were deposited on the glass substrates by C<sub>3</sub>H<sub>7</sub>- and C<sub>6</sub>H<sub>13</sub>-ion irradiation at an incident energy of 0.42 keV per carbon. Raman spectra measurements showed that DLC films were formed by C<sub>3</sub>H<sub>7</sub>- and C<sub>6</sub>H<sub>13</sub>-ion irradiation with the film thickness being larger in case of C<sub>3</sub>H<sub>7</sub>. On the contrary, for C<sub>12</sub>H<sub>25</sub>-ion irradiation, the glass substrate surface was sputtered at an incident energy of 0.42 keV per carbon. Chemical sputtering occurred by surface reactions of hydrogen and carbon with silicon and oxygen atoms. In addition, the surface characteristics of glass substrates irradiated by C<sub>3</sub>H<sub>7</sub>, C<sub>6</sub>H<sub>13</sub> and C<sub>12</sub>H<sub>25</sub> ions were investigated.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82619685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940019
S. Todorov, J. Sawyer, G. Gibilaro, N. Hussey, G. Gammel, David Olden, M. Welsch, N. Parisi
Deliberately non-uniform dose implants are used in the industry to improve device performance across the wafer by compensating for non-uniformities introduced by process steps other than implantation. Varian ion implanters have offered this SuperScan™ capability for close to ten years [1-3]. Recent developments in SuperScan on Varian mid-current implanters significantly expand the ability to deliver virtually any desired dose pattern to wafer. This is accomplished by the introduction of new algorithms allowing custom dose delivery for any scan line and is enabled by the development of an enhanced dose controller and two-dimensional beam profiler. SuperScan 3 is capable of producing centered and off-center patterns without the need for wafer rotation with a zone dose ratio as high as 7:1 while maintaining excellent dose accuracy and uniformity within the different zones.
{"title":"SuperScan™: Customized wafer dose patterning","authors":"S. Todorov, J. Sawyer, G. Gibilaro, N. Hussey, G. Gammel, David Olden, M. Welsch, N. Parisi","doi":"10.1109/IIT.2014.6940019","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940019","url":null,"abstract":"Deliberately non-uniform dose implants are used in the industry to improve device performance across the wafer by compensating for non-uniformities introduced by process steps other than implantation. Varian ion implanters have offered this SuperScan™ capability for close to ten years [1-3]. Recent developments in SuperScan on Varian mid-current implanters significantly expand the ability to deliver virtually any desired dose pattern to wafer. This is accomplished by the introduction of new algorithms allowing custom dose delivery for any scan line and is enabled by the development of an enhanced dose controller and two-dimensional beam profiler. SuperScan 3 is capable of producing centered and off-center patterns without the need for wafer rotation with a zone dose ratio as high as 7:1 while maintaining excellent dose accuracy and uniformity within the different zones.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79892608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940032
S. Ninomiya, H. Sasaki, N. Ido, K. Inada, Kazuhiro Watanabe, M. Kabasawa, M. Tsukihara, K. Ueno
In order to fabricate highly sensitive image sensors (IS), ultra-high energetic ion beams such as 5MeV of boron are required. In order to address the requirement as well as more aggressive requirements of leading-edge IS, SEN has developed the S-UHE, an ultra-high energy single-wafer ion implanter. One of the most important features in the S-UHE is a precise beam angle control system to obtain stable implant depth of ion species against angle-sensitive channeling effects. It is very important for the precise control both to design a sophisticated beam line and to measure beam angles accurately. In this report, measuring techniques of the beam angle and the results are presented.
{"title":"Precise beam angle control in the S-UHE, SEN's single-wafer ultra-high energy ion implanter","authors":"S. Ninomiya, H. Sasaki, N. Ido, K. Inada, Kazuhiro Watanabe, M. Kabasawa, M. Tsukihara, K. Ueno","doi":"10.1109/IIT.2014.6940032","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940032","url":null,"abstract":"In order to fabricate highly sensitive image sensors (IS), ultra-high energetic ion beams such as 5MeV of boron are required. In order to address the requirement as well as more aggressive requirements of leading-edge IS, SEN has developed the S-UHE, an ultra-high energy single-wafer ion implanter. One of the most important features in the S-UHE is a precise beam angle control system to obtain stable implant depth of ion species against angle-sensitive channeling effects. It is very important for the precise control both to design a sophisticated beam line and to measure beam angles accurately. In this report, measuring techniques of the beam angle and the results are presented.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87272578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939984
Ying Tang, O. Byl, A. Ávila, J. Sweeney, Richard S. Ray, John Koo, M. Jeon, T. Miller, S. Krause, W. Skinner, J. Mullin
Ion implantation is known for its precise control and reproducibility of doping, enabling it to become one of the main approaches for high-efficiency cell manufacturing in the solar industry. Among the dopant materials, boron doping often represents the largest challenge to productivity as the efficiency of the traditional doping material, boron trifluoride (BF3), is always low. This paper presents a high-efficiency and high-productivity solution for boron doping on an Applied Materials solar ion implanter by using diboron tetrafluoride (B2F4) as a replacement gaseous boron source material for BF3. Both the B+ beam current and source life effects were evaluated. With optimized source parameters and beam tuning, the solar implanter with B2F4 has demonstrated significant improvements for both B+ beam current performance and source lifetime.
{"title":"High-efficiency, high-productivity boron doping implantation by diboron tetrafluoride (B2F4) gas on Applied Materials solar ion implanter","authors":"Ying Tang, O. Byl, A. Ávila, J. Sweeney, Richard S. Ray, John Koo, M. Jeon, T. Miller, S. Krause, W. Skinner, J. Mullin","doi":"10.1109/IIT.2014.6939984","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939984","url":null,"abstract":"Ion implantation is known for its precise control and reproducibility of doping, enabling it to become one of the main approaches for high-efficiency cell manufacturing in the solar industry. Among the dopant materials, boron doping often represents the largest challenge to productivity as the efficiency of the traditional doping material, boron trifluoride (BF3), is always low. This paper presents a high-efficiency and high-productivity solution for boron doping on an Applied Materials solar ion implanter by using diboron tetrafluoride (B2F4) as a replacement gaseous boron source material for BF3. Both the B+ beam current and source life effects were evaluated. With optimized source parameters and beam tuning, the solar implanter with B2F4 has demonstrated significant improvements for both B+ beam current performance and source lifetime.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"12 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90632655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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