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2018 IEEE International Solid - State Circuits Conference - (ISSCC)最新文献

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A 43.4μW photoplethysmogram-based heart-rate sensor using heart-beat-locked loop 一种基于43.4μW光电容积图的心率传感器,采用心跳锁定回路
Pub Date : 2018-02-14 DOI: 10.1109/ISSCC.2018.8310390
D. Jang, Seonghwan Cho
Photoplethysmogram (PPG) sensors have gained great popularity in recent years as they can easily obtain heart rate (HR) in wearable devices such as smart watches and smart rings. However, one of the biggest problems for PPG sensors is their large power consumption, as wearable devices are highly limited in its battery capacity. The power consumption of a PPG sensor is typically dominated by the LED driver, which requires several to a few tens of mA of current. Thus, many previous works are aimed at reducing the LED driver power [1-5]. The most widely used method is duty-cycling the LED by using a train of discrete pulses instead of always turning on the LED [1-4]. As a PPG signal has low bandwidth, the duty-cycle ratio of the LED can be as low as 1%. Another low-power method is compressive sampling, which exploits the sparse nature of PPG signals [5]. Although it can reduce the effective duty-cycle ratio down to 0.0125%, a critical problem is that a large power consumption is required in reconstructing the compressive-sampled signal. In this work, we present an ultra-low-power PPG sensor with a heartbeat-locked loop (HBLL) that turns on the LED only during the PPG peaks and thus achieves an effective duty cycle of 0.0175%. We also reduce the power consumption of the analog front-end (AFE) by using the HBLL, which is in contrast to previous works where AFE power is not duty-cycled. A prototype implemented in 0.18μm CMOS demonstrates 43.4μW of total power consumption with less than 2.1bpm error in heart rate.
近年来,Photoplethysmogram (PPG)传感器由于可以在智能手表和智能戒指等可穿戴设备中轻松获取心率(HR)而受到广泛欢迎。然而,PPG传感器最大的问题之一是其巨大的功耗,因为可穿戴设备的电池容量受到高度限制。PPG传感器的功耗通常由LED驱动器主导,它需要几到几十毫安的电流。因此,以前的许多工作都是为了降低LED驱动功率[1-5]。最广泛使用的方法是通过使用一列离散脉冲来占空比LED,而不是始终打开LED[1-4]。由于PPG信号具有低带宽,LED的占空比可低至1%。另一种低功耗方法是压缩采样,它利用了PPG信号的稀疏特性[5]。虽然它可以将有效占空比降低到0.0125%,但一个关键的问题是在重建压缩采样信号时需要很大的功耗。在这项工作中,我们提出了一种超低功耗PPG传感器,该传感器具有心跳锁定环(HBLL),仅在PPG峰值期间打开LED,从而实现0.0175%的有效占空比。我们还通过使用HBLL降低了模拟前端(AFE)的功耗,这与以前AFE功率不占空比的工作形成对比。在0.18μm CMOS上实现的样机显示,总功耗为43.4μW,心率误差小于2.1bpm。
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引用次数: 11
A 95.2% efficiency dual-path DC-DC step-up converter with continuous output current delivery and low voltage ripple 具有连续输出电流和低电压纹波的效率为95.2%的双路DC-DC升压变换器
Pub Date : 2018-02-14 DOI: 10.1109/ISSCC.2018.8310368
Se-un Shin, Yeunhee Huh, Yong-Min Ju, Sung-Won Choi, Changsik Shin, Young-Jin Woo, Minseong Choi, Se-Hong Park, Young-Hoon Sohn, Min-Woo Ko, Youngsin Jo, Hyunki Han, Hyung-Min Lee, Sung-Wan Hong, W. Qu, G. Cho
DC-DC boost converters are widely used to increase the supply voltage in various applications, including LED drivers, energy harvesting, etc. [1-5]. The conventional boost converter (CBC) is shown in Fig. 27.5.1, where the switches S1 and S2 are turned on and off alternately at φ1 and φ2, respectively, and the inductor current (IL) is built up and delivered to the output. There are some critical issues in CBC because the output delivery current (IS) is not continuous. As a result, the IL can be much larger than the load current (ILOAD) as φ1 becomes longer. Since a bulky-size inductor having a low parasitic DC resistance (Rdcr) is not usable for mobile applications with a strictly limited space, this large IL results in significant conduction loss in the large RDCR of a small-size inductor. Another issue is that the discontinuous IS in φ2 causes large voltage ripple (AVOUT) at the output. Moreover, switching spike voltages can cause over-voltage stress on the loading block due to large di/dt of IS combined with parasitic inductances of the GND path.
DC-DC升压变换器被广泛用于提高电源电压的各种应用,包括LED驱动、能量收集等[1-5]。传统升压变换器(CBC)如图27.5.1所示,其中开关S1和S2分别在φ1和φ2处交替接通和关断,建立电感电流(IL)并传递到输出端。由于输出输出电流(IS)不是连续的,在CBC中存在一些关键问题。因此,当φ1变长时,IL可能比负载电流(ILOAD)大得多。由于具有低寄生直流电阻(Rdcr)的大尺寸电感不适用于具有严格有限空间的移动应用,因此这种大IL会导致小尺寸电感的大Rdcr中的显着导通损耗。另一个问题是,φ2的不连续is在输出端会导致较大的电压纹波(AVOUT)。此外,由于IS的大di/dt加上GND路径的寄生电感,开关尖峰电压会在负载块上造成过电压应力。
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引用次数: 20
A 13.56MHz time-interleaved resonant-voltage-mode wireless-power receiver with isolated resonator and quasi-resonant boost converter for implantable systems 一种用于植入式系统的13.56MHz时交错谐振电压模式无线电源接收器,具有隔离谐振器和准谐振升压变换器
Pub Date : 2018-02-14 DOI: 10.1109/ISSCC.2018.8310230
Se-un Shin, Minseong Choi, Seok-Tae Koh, Yu-Jin Yang, Seungchul Jung, Young-Hoon Sohn, Se-Hong Park, Yong-Min Ju, Youngsin Jo, Yeunhee Huh, Sung-Won Choi, Sang Joon Kim, G. Cho
Wireless power transfer (WPT) has been widely adopted in various applications, such as biomedical implants and wireless sensors. A conventional voltage-mode receiver (VM-RX) uses a rectifier or a doubler for AC-DC conversion [1,2]. This requires a sufficiently large input power (P,N) inducing a large voltage (VAC) in the LC tank of the receiver (RX) due to the limited voltage conversion efficiency. A subordinate DC-DC converter is also required for voltage regulation or battery charging, which reduces the overall power-conversion efficiency (PCE) due to the 2-stage structure. To overcome these limitations, the resonant current-mode receiver (RCM-RX) has been proposed for direct battery charging [3] and voltage regulation [4,5]. The RCM-RX has two operation phases: a resonance phase (PHre) that accumulates energy in the LC tank during optimal resonant cycles (NOPT) to track the maximum efficiency [3], and a charging phase (PHch) that delivers the energy of the LC tank to the output, when the resonant current (IAC) is at its peak. However, the RCM-RX typically operates at low resonant frequency fRESO (50kHz to 1MHz) because it is challenging to accurately detect the peak timing of IAC due to the intrinsic delay and offset of the comparator used in the peak timing detector. Operating at low fRESO causes the coil size to increase, making a burden on a size-constrained implant. In addition, the RCM-RX has a LC-tank resonance-loss interval PHch, which hinders optimal power transfer from the transmitter (TX) to the RX because the reactive impedance is not cancelled out but appears on the TX side. Because the LC tank and the output are not isolated during PHch, the power-transfer efficiency (PTE) can also be affected by load variation, such as the battery-voltage (VBAT) variation. These problems become worse as NOPT is reduced to lower number.
无线电力传输(WPT)已广泛应用于生物医学植入物和无线传感器等领域。传统的电压型接收机(VM-RX)使用整流器或倍频器进行交流-直流转换[1,2]。由于电压转换效率有限,这需要足够大的输入功率(P,N)在接收器(RX)的LC槽中产生大电压(VAC)。电压调节或电池充电还需要一个从属的DC-DC转换器,由于两级结构,这降低了整体功率转换效率(PCE)。为了克服这些限制,已经提出了用于电池直接充电[3]和电压调节[4,5]的谐振电流模式接收器(RCM-RX)。RCM-RX有两个工作相位:谐振相位(PHre)在最佳谐振周期(NOPT)期间在LC槽中积累能量以跟踪最大效率[3],充电相位(PHch)在谐振电流(IAC)达到峰值时将LC槽的能量传递到输出端。然而,RCM-RX通常工作在低谐振频率fRESO (50kHz至1MHz),因为由于峰值定时检测器中使用的比较器的固有延迟和偏移,准确检测IAC的峰值定时具有挑战性。在低fRESO下操作会导致线圈尺寸增加,对尺寸受限的植入物造成负担。此外,RCM-RX具有LC-tank谐振损耗间隔PHch,这阻碍了从发射机(TX)到RX的最佳功率传输,因为无功阻抗没有被抵消,而是出现在TX侧。由于LC槽和输出在PHch过程中不是隔离的,因此功率传输效率(PTE)也会受到负载变化的影响,例如电池电压(VBAT)的变化。随着NOPT减少到更低的数字,这些问题变得更糟。
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引用次数: 14
A 97% high-efficiency 6μs fast-recovery-time buck-based step-up/down converter with embedded 1/2 and 3/2 charge-pumps for li-lon battery management 一种97%高效率的6μs快速恢复时间buck型升压/降压转换器,内置1/2和3/2充电泵,用于锂离子电池管理
Pub Date : 2018-02-14 DOI: 10.1109/ISSCC.2018.8310367
Min-Woo Ko, Kiduk Kim, Young-Jin Woo, Se-un Shin, Hyunki Han, Yeunhee Huh, Gyeong-Gu Kang, Jeong-Hyun Cho, Sangjin Lim, Se-Hong Park, Hyung-Min Lee, G. Cho
Lithium-ion batteries are generally used in mobile devices, but the voltage range of the battery varies from 2.7 to 4.2V. To provide a mid-3V-range output from the battery, a converter capable of step-up/down-conversion is necessary. For this purpose, non-inverting buck-boost topologies with multimode control [1-3] have been widely used. However, they have limited efficiency slightly higher than 90%, which comes from the fact that a main current path always encompasses two switches. To increase the efficiency in the buck mode where the converter operates for most of the usage time, a flying capacitor buck-boost (FCBB) was proposed in [4]. Despite its high power efficiency, it requires large-size LDMOS to endure a large voltage range up to 8V at switching node, resulting in cost inefficiency. Since all these topologies have a common controller that covers both buck and boost modes of operation, compensator design is challenging. Moreover, a non-minimum-phase system of boost operation makes it hard to achieve a fast loop response. In this paper, we propose a step-up/down DC-DC converter based on buck operation only over the whole input voltage range, which greatly simplifies the controller design and consequently gives fast response. Furthermore, it achieves high efficiency because of the reduced effective resistance on the main current path.
锂离子电池一般用于移动设备,但电池的电压范围从2.7到4.2V不等。为了从电池中提供3v范围的输出,需要一个能够升压/降压转换的转换器。为此,具有多模控制的非逆变降压-升压拓扑被广泛使用[1-3]。然而,它们的效率有限,略高于90%,这是因为主电流路径总是包含两个开关。为了提高变换器在降压模式下的效率,在[4]中提出了一种飞行电容降压升压(FCBB)。虽然功率效率高,但它需要大尺寸LDMOS在交换节点承受高达8V的大电压范围,导致成本低效率。由于所有这些拓扑都有一个通用的控制器,涵盖降压和升压操作模式,因此补偿器的设计具有挑战性。此外,升压操作的非最小相位系统难以实现快速环路响应。在本文中,我们提出了一种仅在整个输入电压范围内基于降压运算的升压/降压DC-DC变换器,这大大简化了控制器的设计,从而获得了快速的响应。此外,由于减小了主电流路径上的有效电阻,从而实现了高效率。
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引用次数: 14
A 110dB-CMRR 100dB-PSRR multi-channel neural-recording amplifier system using differentially regulated rejection ratio enhancement in 0.18μm CMOS 采用0.18μm CMOS差分调节抑制比增强的110dB-CMRR 100dB-PSRR多通道神经记录放大器系统
Pub Date : 2018-02-14 DOI: 10.1109/ISSCC.2018.8310389
Sehwan Lee, Arup K. George, Taeju Lee, Jun-Uk Chu, Sungmin Han, Ji-Hoon Kim, M. Je, Junghyup Lee
Multi-channel neural-recording amplifier systems have evolved into the method of choice for analyzing neurophysiological behavior, and are leading to a deeper understanding of the human brain [1-4]. Such systems operate from a noisy supply and ground, especially when they are powered wirelessly. As shown in Fig. 29.7.1, the amplifiers ought to be low-noise, low-power, and resilient against environmental noise and interferences that are capacitively coupled from the power lines (220V/60Hz). Specifications-wise, these requirements translate into high CMRR, TCMRR, and PSRR. TCMRR (total CMRR) is a more realistic specification than CMRR as it includes the effect of the impedances of both electrodes (Ze) and the amplifier input (ZCin) as well. In fact, the TCMRR should be >70dB for reliable detection of a 5μVrms neural signal [1].
多通道神经记录放大器系统已经发展成为分析神经生理行为的首选方法,并导致对人类大脑的更深层次的理解[1-4]。这样的系统在嘈杂的电源和地面上运行,尤其是在无线供电的情况下。如图29.7.1所示,放大器应该是低噪声、低功耗的,并且能够抵御来自电源线(220V/60Hz)电容耦合的环境噪声和干扰。在规范方面,这些需求转化为高CMRR、TCMRR和PSRR。TCMRR(总CMRR)是一个比CMRR更现实的规格,因为它包括两个电极(Ze)和放大器输入(ZCin)的阻抗的影响。实际上,为了可靠地检测5μVrms的神经信号,TCMRR应该>70dB[1]。
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引用次数: 17
A 100mK-NETD 100ms-startup-time 80×60 micro-bolometer CMOS thermal imager integrated with a 0.234mm2 1.89μVrms noise 12b biasing DAC 100mK-NETD 100ms-启动时间80×60微测热CMOS热像仪,集成0.234mm2 1.89μVrms噪声12b偏置DAC
Pub Date : 2018-02-13 DOI: 10.1109/ISSCC.2018.8310249
Kiduk Kim, Seunghyun Park, K. Yoon, Gyeong-Gu Kang, Hyunki Han, Jieun Choi, Min-Woo Ko, Jeong-Hyun Cho, Sangjin Lim, Hyung-Min Lee, Hyunsik Kim, Kwyro Lee, G. Cho
A micro-bolometer focal plane array (MBFPA) detector is one of the best candidates for thermal imaging cameras due to its excellent uncooled imaging performance with low manufacturing cost [1-4]. In Fig. 10.8.1, remote infra-red signals from thermal objects are maximized and absorbed at the MEMS micro-bolometer pixels having a λ/4 cavity structure, and they are then converted into resistance of a thermistor layer in each cell. Then, a CMOS analog front-end (AFE) reads out the cell resistance value in current-mode by applying a voltage bias to the micro-bolometer pixel. In the readout process, the skimming cell that does not respond to the infra-red signal is used to remove the offset components by generating an opposite-phase current, which in turn alleviates the system required resolution. Nevertheless, there is still very significant fixed-pattern noise (FPN) resulting from process, voltage, and temperature (PVT) variations, and this severely limits the responsivity/dynamic range trade-off. Addressing the problem, both bias voltages (VFID & VGSK) applied to sensing and skimming cells, respectively, should be precisely adjusted so as to avoid any saturation while maintaining sufficient responsivity, and their noise levels must be low enough considering the noise amplification in the signal chain.
微辐射热计焦平面阵列(MBFPA)探测器因其优异的非冷却成像性能和低廉的制造成本而成为热像仪的最佳候选器件之一[1-4]。在图10.8.1中,来自热物体的远红外信号在具有λ/4腔结构的MEMS微测热仪像素处被最大化和吸收,然后转换为每个单元中热敏电阻层的电阻。然后,CMOS模拟前端(AFE)通过对微测热计像素施加电压偏置,在电流模式下读出电池电阻值。在读出过程中,不响应红外信号的撇脂单元通过产生反相电流来去除偏移分量,从而减轻了系统所需的分辨率。然而,由于工艺、电压和温度(PVT)的变化,仍然存在非常显著的固定模式噪声(FPN),这严重限制了响应性/动态范围的权衡。为了解决这个问题,分别应用于传感细胞和掠读细胞的偏置电压(VFID和VGSK)应该精确调整,以避免在保持足够的响应性的同时出现饱和,并且考虑到信号链中的噪声放大,它们的噪声电平必须足够低。
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引用次数: 7
A 28Gb/s transceiver with chirp-managed EDC for DML systems 用于DML系统的具有啁啾管理EDC的28Gb/s收发器
Pub Date : 2018-02-13 DOI: 10.1109/ISSCC.2018.8310285
Kyeongha Kwon, Jong-Hyeok Yoon, Hanho Choi, Younho Jeon, Jaehyeok Yang, Bongjin Kim, Soon-Won Kwon, Minsik Kim, Sejun Jeon, Hyosup Won, Hyeon-Min Bae
Directly modulated lasers (DMLs) are widely employed in medium-reach optical links owing to their simplicity and cost effectiveness. However, the chirp phenomenon under direct modulation limits the reach (2–10km) in a standard single-mode fiber (SMF). Although diverse optical-domain chirp-management techniques have been studied [1], excessive cost and installation difficulties have limited their widespread use. Therefore, external modulation schemes are predominant in applications requiring extended-reach, despite their high cost and power dissipation. Recently, an electronic dispersion compensation (EDC) IC has been reported to compensate for the chirp-induced dispersion (adiabatic chirp) of a 6Gb/s DML [2,3]. However, such a technique cannot be applied to high-speed (>10Gb/s) DML applications since spectral broadening caused by transient chirp dominates in high-speed links. In this paper, an adaptive EDC-based CDR IC compensating for both adiabatic and transient chirp in DMLs is proposed to help extend the reach of both 10Gb/s and 28Gb/s optical links.
直接调制激光器(dml)由于其简单和成本效益而广泛应用于中距离光链路。然而,直接调制下的啁啾现象限制了标准单模光纤(SMF)的距离(2-10km)。尽管人们已经研究了各种各样的光域啁啾管理技术,但过高的成本和安装困难限制了它们的广泛应用。因此,外部调制方案在需要延伸的应用中占主导地位,尽管它们的成本和功耗很高。最近,一种电子色散补偿(EDC) IC被报道用于补偿6Gb/s DML的啁啾引起的色散(绝热啁啾)[2,3]。然而,这种技术不能应用于高速(10Gb/s) DML应用,因为瞬态啁啾引起的频谱展宽在高速链路中占主导地位。本文提出了一种基于edc的自适应CDR IC补偿dml中的绝热啁啾和瞬态啁啾,以帮助扩展10Gb/s和28Gb/s光链路的覆盖范围。
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引用次数: 1
A 7.8Gb/s/pin 1.96pJ/b compact single-ended TRX and CDR with phase-difference modulation for highly reflective memory interfaces 一个7.8Gb/s/引脚1.96pJ/b紧凑型单端TRX和CDR,具有相位差调制,用于高反射存储器接口
Pub Date : 2018-02-13 DOI: 10.1109/ISSCC.2018.8310289
Sooeun Lee, Jaeyoung Seo, Kyunghyun Lim, Jaehyun Ko, J. Sim, Hong-June Park, Byungsub Kim
Compact transceivers (TRXs) for highly reflective (HR) interconnects are strongly demanded by the memory industry. Although discontinuous reflective channels like multi-drop DRAM interfaces are less suitable for high data rates than continuous point-to-point channels, their great advantages in high capacity, high throughput, and low latency attract the market [1-3]. However, compact TRXs for low-loss HR channels are more challenging than for high-loss low-reflection (LR) channels. Although the long-tail ISI of a high-loss LR channel can be cost-efficiently canceled by an FFE with a few taps or a DFE with IIR feedback (DFE-IIR) [4], the irregular ISI of a low-loss HR channel requires many DFE taps [2], demanding unacceptably large hardware cost and power dissipation. As an alternative solution, a multi-tone (MT) TRX was proposed to avoid a notch of the frequency response [3], but it is also very costly for HR channels with many notches. This paper proposes a 7.8Gb/s/pin compact single-ended (SE) TRX with simple clock data recovery (CDR) using phase-difference modulation (PDM) for HR memory interfaces. For reliable operation of the TRX/CDR, a phase-difference amplifier (PDA) is also proposed to satisfy its stringent timing requirement.
用于高反射(HR)互连的紧凑型收发器(trx)受到存储器行业的强烈需求。虽然像多滴DRAM接口这样的不连续反射通道不如连续点对点通道适合高数据速率,但它们在高容量、高吞吐量和低延迟方面的巨大优势吸引了市场[1-3]。然而,用于低损耗HR通道的紧凑型trx比用于高损耗低反射(LR)通道更具挑战性。虽然高损耗LR信道的长尾ISI可以通过几个抽头的FFE或带有IIR反馈的DFE (DFE-IIR)来经济有效地消除[4],但低损耗HR信道的不规则ISI需要许多DFE抽头[2],这需要不可接受的大硬件成本和功耗。作为一种替代方案,提出了多音(MT) TRX以避免频率响应的陷波[3],但对于具有许多陷波的HR通道来说,它也非常昂贵。本文提出了一种7.8Gb/s/引脚紧凑单端TRX,具有简单的时钟数据恢复(CDR),用于HR存储器接口,使用相位差调制(PDM)。为了保证TRX/CDR的可靠工作,还提出了一种相位差放大器(PDA)来满足其严格的时序要求。
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引用次数: 11
A 1.8Gb/s 70.6pJ/b 128×16 link-adaptive near-optimal massive MIMO detector in 28nm UTBB-FDSOI 基于28nm UTBB-FDSOI的1.8Gb/s 70.6pJ/b 128×16链路自适应近最优大规模MIMO探测器
Pub Date : 2018-02-12 DOI: 10.1109/ISSCC.2018.8310265
Wei Tang, H. Prabhu, Liang Liu, V. Öwall, Zhengya Zhang
This work presents a 2.0mm2 128×16 massive MIMO detector IC that provides 21dB array gain and 16x multiplexing gain at the system level. The detector implements iterative expectation-propagation detection (EPD) for up to 256-QAM modulation. Tested with measured channel data [1], the detector achieves 4.3dB processing gain over state-of-the-art massive MlMo detectors [2, 3], enabling 2.7x reduction in transmit power for battery-powered mobile terminals. The iC uses link-adaptive processing to meet a variety of practical channel conditions with scalable energy consumption. The design is realized in a condensed systolic array architecture and an approximate moment-matching circuitry to reach 1.8Gb/s at 70.6pJ/b. The performance and energy efficiency can be tuned over a wide range by UTBB-FDSOI body bias.
这项工作提出了一个2.0mm2 128×16大规模MIMO检测器IC,在系统级提供21dB阵列增益和16倍复用增益。检测器实现了高达256-QAM调制的迭代期望传播检测(EPD)。通过测量通道数据[1]进行测试,该探测器比最先进的大规模MlMo探测器[2,3]实现了4.3dB的处理增益,使电池供电的移动终端的发射功率降低了2.7倍。该集成电路采用链路自适应处理,以满足各种实际信道条件和可扩展的能耗。该设计采用压缩收缩阵列结构和近似矩匹配电路,在70.6pJ/b下达到1.8Gb/s。利用UTBB-FDSOI体偏置可以在很宽的范围内调节性能和能效。
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引用次数: 18
A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS 用于0.13μm SiGe BiCMOS的128像素0.56THz实时近场成像传感阵列
Pub Date : 2018-02-11 DOI: 10.1109/ISSCC.2018.8310362
P. Hillger, R. Jain, J. Grzyb, L. Mavarani, B. Heinemann, G. MacGrogan, P. Mounaix, T. Zimmer, U. Pfeiffer
Real-time terahertz video cameras are regarded as key enabler systems for numerous applications. Unfortunately, their spatial resolution is fundamentally restricted by the diffraction limit. Near-field-scanning optical microscopy (NSOM) is used in the THz domain to break through this limit [1]. Recently reported THz near-field sensors based on silicon technology promise significant improvements compared to NSOM with respect to sensor sensitivity, system cost, and scanning time [2,3]. However, only single-pixel implementations have been presented with unmodulated CW sources so far, which limits the sensors dynamic range (DR) due to detector 1/f noise. This paper scales-up the research of near-field sensing into larger surfaces made of a plurality of super-resolution pixels with video-rate imaging capabilities. The 128-pixel 0.56THz imaging array includes all functions such as illumination, sensing, detection, and digital readout on a single silicon chip.
实时太赫兹摄像机被认为是许多应用的关键使能系统。不幸的是,它们的空间分辨率基本上受到衍射极限的限制。在太赫兹域使用近场扫描光学显微镜(NSOM)来突破这一限制[1]。最近报道的基于硅技术的太赫兹近场传感器与NSOM相比,在传感器灵敏度、系统成本和扫描时间方面有了显著的改进[2,3]。然而,到目前为止,只有单像素的无调制连续波源实现,由于检测器1/f噪声限制了传感器的动态范围(DR)。本文将近场传感的研究扩大到由多个具有视频速率成像能力的超分辨率像素组成的更大表面。128像素0.56太赫兹成像阵列包括所有功能,如照明,传感,检测和数字读出在单个硅芯片上。
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引用次数: 14
期刊
2018 IEEE International Solid - State Circuits Conference - (ISSCC)
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