Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870552
F. Adamu-Lema, V. Georgiev, A. Asenov
In this paper, by means of simulations, we have studied the impact of Negative Bias Temperature Instability (NBTI) in bulk silicon FinFETs suitable to the 10nm CMOS technology generation. Different levels of channel doping are considered in controlling the threshold voltage and the leakage of the FinFETs for SoC applications. The interplay between the initial statistical variability introduced by random discrete dopants, line edge roughness and metal gate granularity and the statistical variability introduced by different level of trapped charges resulting from NBTI degradation is studied in details. Results related to the time dependent variability and the correlation of key transistor figures of merit are also presented.
{"title":"Simulation of Statistical NBTI Degradation in 10nm Doped Channel pFinFETs","authors":"F. Adamu-Lema, V. Georgiev, A. Asenov","doi":"10.1109/SISPAD.2019.8870552","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870552","url":null,"abstract":"In this paper, by means of simulations, we have studied the impact of Negative Bias Temperature Instability (NBTI) in bulk silicon FinFETs suitable to the 10nm CMOS technology generation. Different levels of channel doping are considered in controlling the threshold voltage and the leakage of the FinFETs for SoC applications. The interplay between the initial statistical variability introduced by random discrete dopants, line edge roughness and metal gate granularity and the statistical variability introduced by different level of trapped charges resulting from NBTI degradation is studied in details. Results related to the time dependent variability and the correlation of key transistor figures of merit are also presented.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86863189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870563
Leandro Julian Mele, P. Palestri, L. Selmi
We present a model of arbitrary chemical reactions at the interface between a solid and an electrolyte, aimed at computing the interface charge build-up and surface potential shift of ion-sensitive FETs in the presence of interfering ions. An expression for the rms value of the surface charge fluctuation and the resulting uncertainty in the ion concentration is derived as well. Application to nanoelectronic ISFET-based sensors for ions and proteins is demonstrated.
{"title":"A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs","authors":"Leandro Julian Mele, P. Palestri, L. Selmi","doi":"10.1109/SISPAD.2019.8870563","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870563","url":null,"abstract":"We present a model of arbitrary chemical reactions at the interface between a solid and an electrolyte, aimed at computing the interface charge build-up and surface potential shift of ion-sensitive FETs in the presence of interfering ions. An expression for the rms value of the surface charge fluctuation and the resulting uncertainty in the ion concentration is derived as well. Application to nanoelectronic ISFET-based sensors for ions and proteins is demonstrated.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76388211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870523
R. Tiwari, N. Parihar, Karansingh Thakor, H. Wong, S. Mahapatra
A physics-based TCAD framework is used to estimate the interface trap generation (ΔNIT) during Negative Bias Temperature Instability (NBTI) stress in P-channel FinFET and Gate All Around (GAA) Nano-Sheet (NS) FET. The impact of mechanical strain due to channel length scaling (LCH) on ΔNIT generation is estimated. The bandstructure calculations are used to explain the impact of mechanical strain on ΔNIT generation.
{"title":"TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain","authors":"R. Tiwari, N. Parihar, Karansingh Thakor, H. Wong, S. Mahapatra","doi":"10.1109/SISPAD.2019.8870523","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870523","url":null,"abstract":"A physics-based TCAD framework is used to estimate the interface trap generation (ΔNIT) during Negative Bias Temperature Instability (NBTI) stress in P-channel FinFET and Gate All Around (GAA) Nano-Sheet (NS) FET. The impact of mechanical strain due to channel length scaling (LCH) on ΔNIT generation is estimated. The bandstructure calculations are used to explain the impact of mechanical strain on ΔNIT generation.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"4 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88831289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870519
Takayuki Mori, J. Ida, Hiroki Endo, Y. Arai
In this study, the precise transient mechanism of the super-steep subthreshold slope PN-body-tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) is clarified by using technology computer-aided design. We found out that the operation mechanism differs between the turn-on and turn-off. Additionally, a new PNBT SOI-FET structure with a second gate for the high-speed operation is proposed and we showed that the new structure can reduce the leakage current upon the turn-off.
{"title":"Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off","authors":"Takayuki Mori, J. Ida, Hiroki Endo, Y. Arai","doi":"10.1109/SISPAD.2019.8870519","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870519","url":null,"abstract":"In this study, the precise transient mechanism of the super-steep subthreshold slope PN-body-tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) is clarified by using technology computer-aided design. We found out that the operation mechanism differs between the turn-on and turn-off. Additionally, a new PNBT SOI-FET structure with a second gate for the high-speed operation is proposed and we showed that the new structure can reduce the leakage current upon the turn-off.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"39 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91185985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870514
T. Suwa, S. Hayase
In this work we focus on two calibration methods to clarify a key point of TCAD calibration for turn-off waveforms and IV characteristics including the saturation currents of IGBTs at the same time. Simulated results with the method based on adjustments of the surface N+ and P+ depth ratio reproduce measured results of all calibration targets reasonably in terms of time and accuracy. On the other hand, simulated results by mainly calibrating parameters of the velocity saturation model for saturation currents hardly reproduce all calibration targets simultaneously. We explain the reason using the roughly approximated criteria of the dynamic punch-through oscillation and dynamic avalanche. We also analyze the temperature dependence of the tail current briefly which is one of the important design items of IGBTs.
{"title":"Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs","authors":"T. Suwa, S. Hayase","doi":"10.1109/SISPAD.2019.8870514","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870514","url":null,"abstract":"In this work we focus on two calibration methods to clarify a key point of TCAD calibration for turn-off waveforms and IV characteristics including the saturation currents of IGBTs at the same time. Simulated results with the method based on adjustments of the surface N+ and P+ depth ratio reproduce measured results of all calibration targets reasonably in terms of time and accuracy. On the other hand, simulated results by mainly calibrating parameters of the velocity saturation model for saturation currents hardly reproduce all calibration targets simultaneously. We explain the reason using the roughly approximated criteria of the dynamic punch-through oscillation and dynamic avalanche. We also analyze the temperature dependence of the tail current briefly which is one of the important design items of IGBTs.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"56 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89048488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870521
Seung-Cheol Han, Sung-Min Hong
A deep neural network is trained to learn the electrostatic potential of the semiconductor device. In order to demonstrate its feasibility, pn diodes are considered. Various pn diodes with different doping densities are generated and the numerical solutions are calculated. The resultant electrostatic potential profiles are used in the training phase. Our numerical results clearly demonstrate that the trained neural network can provide the initial electrostatic potential reasonably well. Since the initial electrostatic potential is improved, the Newton-Raphson loop for the nonlinear Poisson equation can be converged within a smaller number of iterations.
{"title":"Deep Neural Network for Generation of the Initial Electrostatic Potential Profile","authors":"Seung-Cheol Han, Sung-Min Hong","doi":"10.1109/SISPAD.2019.8870521","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870521","url":null,"abstract":"A deep neural network is trained to learn the electrostatic potential of the semiconductor device. In order to demonstrate its feasibility, pn diodes are considered. Various pn diodes with different doping densities are generated and the numerical solutions are calculated. The resultant electrostatic potential profiles are used in the training phase. Our numerical results clearly demonstrate that the trained neural network can provide the initial electrostatic potential reasonably well. Since the initial electrostatic potential is improved, the Newton-Raphson loop for the nonlinear Poisson equation can be converged within a smaller number of iterations.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"58 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81619405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870484
F. Torricelli, E. Macchia, P. Romele, K. Manoli, C. Franco, Z. Kovács-Vajna, G. Palazzo, G. Scamarcio, L. Torsi
Biofunctionalized organic transistors have been recently proposed as a simple wide-field single molecule technology. The further development and engineering of this disruptive technology urgently requires the understanding and modelling of the device operation. Here we show a physical-based numerical model of single molecule organic transistors. The model accurately reproduces the measurements in the whole range of protein concentrations with a unique set of parameters. The model provides quantitative information on the bioelectronic device operation. It is an important tool for further development of transistor-based single molecule.
{"title":"Investigation and Modelling of Single-Molecule Organic Transistors","authors":"F. Torricelli, E. Macchia, P. Romele, K. Manoli, C. Franco, Z. Kovács-Vajna, G. Palazzo, G. Scamarcio, L. Torsi","doi":"10.1109/SISPAD.2019.8870484","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870484","url":null,"abstract":"Biofunctionalized organic transistors have been recently proposed as a simple wide-field single molecule technology. The further development and engineering of this disruptive technology urgently requires the understanding and modelling of the device operation. Here we show a physical-based numerical model of single molecule organic transistors. The model accurately reproduces the measurements in the whole range of protein concentrations with a unique set of parameters. The model provides quantitative information on the bioelectronic device operation. It is an important tool for further development of transistor-based single molecule.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89375717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870481
Kyoung Yeon Kim, Byung-Gook Park
We developed a numerical simulator to model the operation of a bio-FET in transient state. The simulator takes a realistic device structure as a simulation domain, and it employs the drift-diffusion equation for ion/ channel transport, and the Ramo-Shockley theorem for accurate calculation of non- faradaic current. For efficient transient simulation, the implicit time integration scheme is employed where the solution at each time step is obtained from the coupled Newton-Raphson method. Using the simulator, we found that the sensitivity of bio- FET can be improved with transient measurement by redistribution of the mobile ions by an external electric field.
{"title":"Transient Simulation of Field-Effect Biosensors How to Avoid Charge Screening Effect","authors":"Kyoung Yeon Kim, Byung-Gook Park","doi":"10.1109/SISPAD.2019.8870481","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870481","url":null,"abstract":"We developed a numerical simulator to model the operation of a bio-FET in transient state. The simulator takes a realistic device structure as a simulation domain, and it employs the drift-diffusion equation for ion/ channel transport, and the Ramo-Shockley theorem for accurate calculation of non- faradaic current. For efficient transient simulation, the implicit time integration scheme is employed where the solution at each time step is obtained from the coupled Newton-Raphson method. Using the simulator, we found that the sensitivity of bio- FET can be improved with transient measurement by redistribution of the mobile ions by an external electric field.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"94 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83114325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870385
Yunhe Guan, Zunchao Li, H. Carrillo-Nuñez, V. Georgiev, A. Asenov
In this work, the impact of the surface roughness (SR) on the variability in p-type InAs nanowire Tunnel FET (TFET) has been investigated. Using the Non-Equilibrium Green’s Function (NEGF) module implemented in the University of Glasgow quantum transport simulation tool, called NESS, we have simulated a statistical ensemble of 200 TFETs with unique SR profiles. The SR in each device is defined by the characteristic values of the SR root mean square amplitude (RMS) and correlation length. Our results show that the larger the RMS, the stronger the variability. We find that the SR-induced variability is reduced in InAs-Si heterostructure TFETs when comparing with their homogenous InAs counterpart. The impacts of both metal grain granularity and random discrete dopants on InAs TFETs are also studied. Our finding suggests that SR is the weakest source of statistical variability.
{"title":"Quantum Mechanical Simulations of the Impact of Surface Roughness on Nanowire TFET performance","authors":"Yunhe Guan, Zunchao Li, H. Carrillo-Nuñez, V. Georgiev, A. Asenov","doi":"10.1109/SISPAD.2019.8870385","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870385","url":null,"abstract":"In this work, the impact of the surface roughness (SR) on the variability in p-type InAs nanowire Tunnel FET (TFET) has been investigated. Using the Non-Equilibrium Green’s Function (NEGF) module implemented in the University of Glasgow quantum transport simulation tool, called NESS, we have simulated a statistical ensemble of 200 TFETs with unique SR profiles. The SR in each device is defined by the characteristic values of the SR root mean square amplitude (RMS) and correlation length. Our results show that the larger the RMS, the stronger the variability. We find that the SR-induced variability is reduced in InAs-Si heterostructure TFETs when comparing with their homogenous InAs counterpart. The impacts of both metal grain granularity and random discrete dopants on InAs TFETs are also studied. Our finding suggests that SR is the weakest source of statistical variability.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84224375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870397
D. Stradi, U. G. Vej-Hansen, P. Khomyakov, Maeng-Eun Lee, G. Penazzi, A. Blom, J. Wellendorff, S. Smidstrup, K. Stokbro
We propose a first-principles atomistic method based on density functional theory and the non-equilibrium Green’s-function method to investigate the electronic and structural response of metal-insulator-metal capacitors under applied bias voltages. We validate our method by showing its usefulness in two paradigmatic cases where including finite-bias structural relaxation effects is critical to describe the device behavior: formation of dielectric dead layers in a paraelectric SRO|STO|SRO capacitor due to an applied bias voltage, and the switching behavior of a ferroelectric SRO|BTO|SRO capacitor due to an external electric field.
{"title":"Atomistic Modeling Of Nanoscale Ferroelectric Capacitors Using a Density Functional Theory And Non-Equilibrium Green’s-Function Method","authors":"D. Stradi, U. G. Vej-Hansen, P. Khomyakov, Maeng-Eun Lee, G. Penazzi, A. Blom, J. Wellendorff, S. Smidstrup, K. Stokbro","doi":"10.1109/SISPAD.2019.8870397","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870397","url":null,"abstract":"We propose a first-principles atomistic method based on density functional theory and the non-equilibrium Green’s-function method to investigate the electronic and structural response of metal-insulator-metal capacitors under applied bias voltages. We validate our method by showing its usefulness in two paradigmatic cases where including finite-bias structural relaxation effects is critical to describe the device behavior: formation of dielectric dead layers in a paraelectric SRO|STO|SRO capacitor due to an applied bias voltage, and the switching behavior of a ferroelectric SRO|BTO|SRO capacitor due to an external electric field.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"7 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82053051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：