Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257046
C. Delker, Yunlong Zi, Chen Yang, D. Janes
Semiconductor nanowires are promising candidates for nanoelectronic applications such as high-speed electronics, chemical sensors, and transparent electronics. However, practical application of these devices is hindered by the excessive levels of low-frequency (1/f) noise. The general physical model of 1/f noise stems from carrier interactions with the surface oxide along the channel, but the problem is exacerbated in nanowires because of their high surface-to-volume ratio. However, other mechanisms may also contribute to carrier fluctuations leading to higher levels of noise, such as fluctuations in the metal-semiconductor source and drain contacts. Understanding the physics and contributions from the different regions is key to optimizing noise in nanowire devices, but few studies have distinguished between these mechanisms.
{"title":"Low-frequency noise in contact and channel regions of ambipolar InAs nanowire transistors","authors":"C. Delker, Yunlong Zi, Chen Yang, D. Janes","doi":"10.1109/DRC.2012.6257046","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257046","url":null,"abstract":"Semiconductor nanowires are promising candidates for nanoelectronic applications such as high-speed electronics, chemical sensors, and transparent electronics. However, practical application of these devices is hindered by the excessive levels of low-frequency (1/f) noise. The general physical model of 1/f noise stems from carrier interactions with the surface oxide along the channel, but the problem is exacerbated in nanowires because of their high surface-to-volume ratio. However, other mechanisms may also contribute to carrier fluctuations leading to higher levels of noise, such as fluctuations in the metal-semiconductor source and drain contacts. Understanding the physics and contributions from the different regions is key to optimizing noise in nanowire devices, but few studies have distinguished between these mechanisms.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"21 1","pages":"189-190"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85982732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256995
Ning Wang, C. English, E. Pop
We present a comparative study of graphene nanoribbon (GNR) interconnects (ICs) with sub-50 nm copper (Cu) and aluminum (AI) ICs. We extend existing models for all materials in order to understand the physical size effects that occur when the electron mean free path (AMFP) becomes comparable to the IC dimensions. We calibrate such models against the best publicly available data. We find that, depending on geometrical configuration, either Al or GNRs could hold advantages over Cu at linewidths <;10 nm.
{"title":"Comparison of graphene nanoribbons with Cu and Al interconnects","authors":"Ning Wang, C. English, E. Pop","doi":"10.1109/DRC.2012.6256995","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256995","url":null,"abstract":"We present a comparative study of graphene nanoribbon (GNR) interconnects (ICs) with sub-50 nm copper (Cu) and aluminum (AI) ICs. We extend existing models for all materials in order to understand the physical size effects that occur when the electron mean free path (AMFP) becomes comparable to the IC dimensions. We calibrate such models against the best publicly available data. We find that, depending on geometrical configuration, either Al or GNRs could hold advantages over Cu at linewidths <;10 nm.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"183 1","pages":"123-124"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76874592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256945
Jing Guo
We review our efforts on using numerical simulations to study essential physics of dissipative quantum transport in nanoscale field-effect transistors (FETs). Three types of nanoscale transistors are modeled as examples, (i) graphene nanoribbon (GNR) FETs with a quasi-one-dimensional (1D) channel, (ii) graphene FETs with a two-dimensional channel, and (iii) tunneling FETs with a strained GNR channel. In a quasi-1D channel, inelastic phonon scattering can increase the ballisticity at high drain biases considerably and partly offset the negative effect due to elastic scattering. Interplay between dissipative scattering processes and quantum phenomena, such as Klein tunneling in a graphene FET and band-to-band tunneling in a tunneling FET, play an important role on device characteristics. Coupling between far-from-equilibrium phonons and electrons and transport in the strong electron-phonon coupling regime remain as issues for further study.
{"title":"Dissipative quantum transport in nanoscale transistors","authors":"Jing Guo","doi":"10.1109/DRC.2012.6256945","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256945","url":null,"abstract":"We review our efforts on using numerical simulations to study essential physics of dissipative quantum transport in nanoscale field-effect transistors (FETs). Three types of nanoscale transistors are modeled as examples, (i) graphene nanoribbon (GNR) FETs with a quasi-one-dimensional (1D) channel, (ii) graphene FETs with a two-dimensional channel, and (iii) tunneling FETs with a strained GNR channel. In a quasi-1D channel, inelastic phonon scattering can increase the ballisticity at high drain biases considerably and partly offset the negative effect due to elastic scattering. Interplay between dissipative scattering processes and quantum phenomena, such as Klein tunneling in a graphene FET and band-to-band tunneling in a tunneling FET, play an important role on device characteristics. Coupling between far-from-equilibrium phonons and electrons and transport in the strong electron-phonon coupling regime remain as issues for further study.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"59 1","pages":"229-230"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84187566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256993
W. Guan, R. Fan, M. Reed
We demonstrated a field effect reconfigurable nanofluidic diode. This general concept could conceivably be applied to similar thin-body solid-state devices. FERD represents a fundamentally novel system and may function as the building block to create an on-demand, reconfigurable, large-scale integrated nanofluidic circuits for digitally-programmed manipulation of biomolecules such as polynucleotides and proteins.
{"title":"Fabrication and characterization of field effect reconfigurable nanofluidic ionic diodes: Towards digitally-programmed manipulation of biomolecules","authors":"W. Guan, R. Fan, M. Reed","doi":"10.1109/DRC.2012.6256993","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256993","url":null,"abstract":"We demonstrated a field effect reconfigurable nanofluidic diode. This general concept could conceivably be applied to similar thin-body solid-state devices. FERD represents a fundamentally novel system and may function as the building block to create an on-demand, reconfigurable, large-scale integrated nanofluidic circuits for digitally-programmed manipulation of biomolecules such as polynucleotides and proteins.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"50 1","pages":"277-278"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77929093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256998
Peng Li, G. Csaba, V. Sankar, X. Sharon Hu, M. Niemier, W. Porod, G. Bernstein
Nanomagnetic logic (NML) has emerged as a novel paradigm to realize non-volatile, nanometer scale, ultra-low energy digital logic [1]. Since there are large energy differences between magnetization states, an external stimulus is required for circuit re-evaluation. In our first experiments we applied an off-chip magnetic field along the hard (i.e., short) axis of a group of nanomagnets. Later, structures that generate fields on-chip were demonstrated [2]. These current-carrying copper wires clad with ferromagnetic material (Supermalloy, Ni79Fe16Mo5), can provide local magnetic fields for NML circuits. However, the required current densities could be as high as ∼107 A/cm2 [2]. The ratio of flux density to magnetic field strength (μ = B/H) can be increased by surrounding the magnets with a material of high permeability. While we will need to ensure that the binary state of a magnet is not adversely affected, candidate materials do exist. Freescale demonstrated enhanced permeability dielectrics (EPDs) with embedded magnetic nano-particles to increase the field from a word or bit line in field MRAM without increasing current [3]. That EPD particle sizes are below the superparamagnetic limit helps to ensure that a magnet's state is not unduly influenced. With similar considerations, we have proposed a clocking structure where EPD films surround the nanomagnets, as shown in Fig. 1. With this new design, the magnetic flux can be confined within the EPD film area instead of leaking to the air. As such, the field intensity for switching the nanomagnets can be increased, and the required current density and power for clocking can be reduced (potenitially by μr2 in the case of power). This work shows our efforts of integrating EPD films with nanomagnets for NML clocking.
{"title":"Power reduction in nanomagnetic logic clocking through high permeability dielectrics","authors":"Peng Li, G. Csaba, V. Sankar, X. Sharon Hu, M. Niemier, W. Porod, G. Bernstein","doi":"10.1109/DRC.2012.6256998","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256998","url":null,"abstract":"Nanomagnetic logic (NML) has emerged as a novel paradigm to realize non-volatile, nanometer scale, ultra-low energy digital logic [1]. Since there are large energy differences between magnetization states, an external stimulus is required for circuit re-evaluation. In our first experiments we applied an off-chip magnetic field along the hard (i.e., short) axis of a group of nanomagnets. Later, structures that generate fields on-chip were demonstrated [2]. These current-carrying copper wires clad with ferromagnetic material (Supermalloy, Ni79Fe16Mo5), can provide local magnetic fields for NML circuits. However, the required current densities could be as high as ∼107 A/cm2 [2]. The ratio of flux density to magnetic field strength (μ = B/H) can be increased by surrounding the magnets with a material of high permeability. While we will need to ensure that the binary state of a magnet is not adversely affected, candidate materials do exist. Freescale demonstrated enhanced permeability dielectrics (EPDs) with embedded magnetic nano-particles to increase the field from a word or bit line in field MRAM without increasing current [3]. That EPD particle sizes are below the superparamagnetic limit helps to ensure that a magnet's state is not unduly influenced. With similar considerations, we have proposed a clocking structure where EPD films surround the nanomagnets, as shown in Fig. 1. With this new design, the magnetic flux can be confined within the EPD film area instead of leaking to the air. As such, the field intensity for switching the nanomagnets can be increased, and the required current density and power for clocking can be reduced (potenitially by μr2 in the case of power). This work shows our efforts of integrating EPD films with nanomagnets for NML clocking.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"138 1","pages":"129-130"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86357368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256953
M. Marinella, J. Stevens, E. Longoria, P. Kotula
Resistive random access memories (ReRAM), also referred to as memristors, have gained a great deal of attention recently as a potential high density, low energy replacement for flash and DRAM. Furthermore, the analog properties of this device are a potential enabler of neuromorphic computing. Of particular interest are the class of ReRAM based on based on the valence change mechanism and fabricated from transition metal oxides (TMOs) such as TaOx and HfOx [1]. This particular class of ReRAM have achieved record endurance (1012 cycles) [2], sub-nanosecond switching speeds [3], and demonstrated operation in 10×10 nm devices [4]. For the first time, we present resistive switching in a ReRAM structure with an AlN based switching layer. The electrical characteristics are very similar to those observed in the valence change class of ReRAM. In particular, we have observed bipolar switching at less than ±1V and repeatable linear current-voltage (I-V) behavior at subswitching (read) voltages similar to the electrical characteristics of TaOx ReRAM. Physical analysis using TEM with electron energy loss spectroscopy (EELS) reveals that the switching layer contains oxygen, likely forming aluminum oxynitride (AlON).
{"title":"Resistive switching in aluminum nitride","authors":"M. Marinella, J. Stevens, E. Longoria, P. Kotula","doi":"10.1109/DRC.2012.6256953","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256953","url":null,"abstract":"Resistive random access memories (ReRAM), also referred to as memristors, have gained a great deal of attention recently as a potential high density, low energy replacement for flash and DRAM. Furthermore, the analog properties of this device are a potential enabler of neuromorphic computing. Of particular interest are the class of ReRAM based on based on the valence change mechanism and fabricated from transition metal oxides (TMOs) such as TaOx and HfOx [1]. This particular class of ReRAM have achieved record endurance (1012 cycles) [2], sub-nanosecond switching speeds [3], and demonstrated operation in 10×10 nm devices [4]. For the first time, we present resistive switching in a ReRAM structure with an AlN based switching layer. The electrical characteristics are very similar to those observed in the valence change class of ReRAM. In particular, we have observed bipolar switching at less than ±1V and repeatable linear current-voltage (I-V) behavior at subswitching (read) voltages similar to the electrical characteristics of TaOx ReRAM. Physical analysis using TEM with electron energy loss spectroscopy (EELS) reveals that the switching layer contains oxygen, likely forming aluminum oxynitride (AlON).","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"17 1","pages":"89-90"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83032734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256999
A. Biswas, C. Alper, L. De Michielis, A. Ionescu
Tunneling Field Effect Transistors (TFET) are promising devices to respond to the demanding requirements of future technology nodes. The benefits of the TFETs are linked to their sub-60mV/decade sub-threshold swing, a prerequisite for scaling the supply voltage well below 1V. Main research efforts are currently dedicated to improving the on current (ION) level in a TFET. However, from the circuit point of view the device capacitances are equally important. It is known that the drain-to-gate capacitance in a TFET is almost equal to the gate capacitance in moderate and strong inversion regimes. Due to enhanced Miller Effect, they are known to exhibit large over/undershoot in transient operation as compared to CMOS. Therefore, the effort on improving ION should be simultaneous to an effort of reducing the Miller capacitance (CMILLER). This work proposes a new architecture which addresses both these issues.
隧道场效应晶体管(ttfet)是一种很有前途的器件，可以响应未来技术节点的苛刻要求。tfet的优势在于其低于60mv / 10的亚阈值摆幅，这是将电源电压降至远低于1V的先决条件。目前主要的研究工作是致力于提高晶体管的on current (ION)水平。然而，从电路的角度来看，器件的电容也同样重要。众所周知，在中等和强反转状态下，TFET的漏极到栅极电容几乎等于栅极电容。由于增强的米勒效应，与CMOS相比，它们在瞬态操作中表现出较大的过冲/欠冲。因此，改善离子的努力应该与降低米勒电容(CMILLER)的努力同时进行。这项工作提出了一个解决这两个问题的新架构。
{"title":"New tunnel-FET architecture with enhanced ION and improved Miller Effect for energy efficient switching","authors":"A. Biswas, C. Alper, L. De Michielis, A. Ionescu","doi":"10.1109/DRC.2012.6256999","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256999","url":null,"abstract":"Tunneling Field Effect Transistors (TFET) are promising devices to respond to the demanding requirements of future technology nodes. The benefits of the TFETs are linked to their sub-60mV/decade sub-threshold swing, a prerequisite for scaling the supply voltage well below 1V. Main research efforts are currently dedicated to improving the on current (ION) level in a TFET. However, from the circuit point of view the device capacitances are equally important. It is known that the drain-to-gate capacitance in a TFET is almost equal to the gate capacitance in moderate and strong inversion regimes. Due to enhanced Miller Effect, they are known to exhibit large over/undershoot in transient operation as compared to CMOS. Therefore, the effort on improving ION should be simultaneous to an effort of reducing the Miller capacitance (CMILLER). This work proposes a new architecture which addresses both these issues.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"105 1","pages":"131-132"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79188892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257015
S. L. Selvaraj, A. Watanabe, A. Wakejima, T. Egawa
The growth of GaN transistors on Si substrate has received tremendous attention due to large size availability of Si substrates at low cost. However, it is imperative to demonstrate a high breakdown AlGaN/GaN HEMTs on Si grown by MOCVD as high power device applications are the primary significant contribution expected of a GaN based devices. In the past, we have demonstrated high breakdown on AlGaN/GaN HEMTs grown on Si by thickening the buffer layers [1-2]. All our previous reports were based on the 3-terminal OFF breakdown voltage (3TBV) measured on devices with short gate-drain (Lgd = 3 or 4 μm) spacing which limited the breakdown voltage due to Schottky gate leakage current [3]. Therefore, in the current investigation, we prepared HEMTs with various Lgd and studied its dependence on 3TBV. We observed a 3TBV of 1.4 kV for an AlGaN/GaN HEMT grown on Si having Lgd of 20 μm.
{"title":"1.4 kV breakdown voltage for MOCVD grown AlGaN/GaN HEMTs on Si substrate","authors":"S. L. Selvaraj, A. Watanabe, A. Wakejima, T. Egawa","doi":"10.1109/DRC.2012.6257015","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257015","url":null,"abstract":"The growth of GaN transistors on Si substrate has received tremendous attention due to large size availability of Si substrates at low cost. However, it is imperative to demonstrate a high breakdown AlGaN/GaN HEMTs on Si grown by MOCVD as high power device applications are the primary significant contribution expected of a GaN based devices. In the past, we have demonstrated high breakdown on AlGaN/GaN HEMTs grown on Si by thickening the buffer layers [1-2]. All our previous reports were based on the 3-terminal OFF breakdown voltage (3TBV) measured on devices with short gate-drain (Lgd = 3 or 4 μm) spacing which limited the breakdown voltage due to Schottky gate leakage current [3]. Therefore, in the current investigation, we prepared HEMTs with various Lgd and studied its dependence on 3TBV. We observed a 3TBV of 1.4 kV for an AlGaN/GaN HEMT grown on Si having Lgd of 20 μm.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"23 1","pages":"53-54"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90654708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256941
Kun Xu, C. Zeng, Qin Zhang, P. Ye, Kang L. Wang, C. Richter, D. Gundlach, N. Nguyen
We report the first direct measurement of the Dirac point, the Fermi level, and the work function of single layer gapless graphene by using photoemission threshold spectroscopy. Since the pioneering work of Novoselov et al in 2004, [1] graphene has attracted an immense amount of interest from all disciplines. [2] The knowledge of the physics of graphene-based devices has grown dramatically. Along with the recent success of large area chemical vapor deposition (CVD) growth of graphene, [3] it seems the industrial applications such as transparent electrodes, [4] field effect transistors, [5] and quantum well devices [6] are becoming more promising. However, the precise position of the Dirac point and Fermi level at the graphene/oxide interface has yet to be investigated; despite their importance in the design and modeling of graphene-based devices. In this paper, we present the study of a semi-transparent metal/high-k/graphene/SiO2/Si structure, and focus our study on the photoemission phenomena at the graphene/SiO2 interface. As a result, a complete electronic band alignment of the graphene/SiO2/Si system is accurately constructed for the first time.
{"title":"Direct measurement of Dirac point and Fermi level at graphene/oxide interface by internal photoemission","authors":"Kun Xu, C. Zeng, Qin Zhang, P. Ye, Kang L. Wang, C. Richter, D. Gundlach, N. Nguyen","doi":"10.1109/DRC.2012.6256941","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256941","url":null,"abstract":"We report the first direct measurement of the Dirac point, the Fermi level, and the work function of single layer gapless graphene by using photoemission threshold spectroscopy. Since the pioneering work of Novoselov et al in 2004, [1] graphene has attracted an immense amount of interest from all disciplines. [2] The knowledge of the physics of graphene-based devices has grown dramatically. Along with the recent success of large area chemical vapor deposition (CVD) growth of graphene, [3] it seems the industrial applications such as transparent electrodes, [4] field effect transistors, [5] and quantum well devices [6] are becoming more promising. However, the precise position of the Dirac point and Fermi level at the graphene/oxide interface has yet to be investigated; despite their importance in the design and modeling of graphene-based devices. In this paper, we present the study of a semi-transparent metal/high-k/graphene/SiO2/Si structure, and focus our study on the photoemission phenomena at the graphene/SiO2 interface. As a result, a complete electronic band alignment of the graphene/SiO2/Si system is accurately constructed for the first time.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"63 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90656254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257014
C. Pietzka, Z. Gao, Y. Xu, E. Kohn
In this study a concept of an electrolyzer operating in rather aggressive solutions (and potentially salt water) and with the potential of monolithic integration with a solar cell structure has been presented. The electrolyzer structure is based on a metal dot modified CVD diamond electrode structure grown by HFCVD, a technique which can be scaled to large surface areas. Presently, only the III-Nitride semiconductor materials system seems compatible with the growth conditions required for high-quality NCD electrode material. However, here the incorporation of low bandgap InGaN quantum well structures would be needed, but is still outstanding.
{"title":"Transparent diamond-based electrolyzer for integration with solar cell","authors":"C. Pietzka, Z. Gao, Y. Xu, E. Kohn","doi":"10.1109/DRC.2012.6257014","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257014","url":null,"abstract":"In this study a concept of an electrolyzer operating in rather aggressive solutions (and potentially salt water) and with the potential of monolithic integration with a solar cell structure has been presented. The electrolyzer structure is based on a metal dot modified CVD diamond electrode structure grown by HFCVD, a technique which can be scaled to large surface areas. Presently, only the III-Nitride semiconductor materials system seems compatible with the growth conditions required for high-quality NCD electrode material. However, here the incorporation of low bandgap InGaN quantum well structures would be needed, but is still outstanding.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"3 1","pages":"279-280"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90734886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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